JP2006049812A - Package for semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a stub circuit due to side metallizing without causing deformation of a substrate in a package for a semiconductor device. <P>SOLUTION: The package 10 has a substrate 20 where a side wall forming a first recess 25 with an inside surface is located on a base layer having a mounting portion to mount a semiconductor device. A second recess 60 and a lead terminal fitting pad 40 adjacent to the second recess 60 are formed on the side surface of the side wall. Moreover, the package 10 has an inside wiring 30 including one end formed near the mounting portion on the surface of the first recess 25, and the other end formed at a position which is on the surface of the second recess 60 and is formed apart in a vertical direction from the position where the second recess 60 and a lead terminal fitting pad 40 are adjacent each other. The other end of the inside wiring 30 and the lead fitting pad 40 are connected with a connecting conductor 62 which is formed covering a part of surface of the second recess 60, containing the almost vertical portion on surface of the second recess 60. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device package and a method for manufacturing the same.

  Conventionally, a package for a semiconductor device formed by an insulating member made of a ceramic laminate or the like is known. FIG. 13 is a schematic cross-sectional view showing an example of the configuration of such a conventionally known semiconductor device package. FIG. 13 mainly shows the outer peripheral portion of the semiconductor device package. The package for a semiconductor device shown in FIG. 13 is made of a ceramic laminate, and has an insulating base 120 having a recess 125 on which the bottom surface serves as a mounting portion for the semiconductor element 170, the surface of the recess 125, and the sidewall of the insulating base 120. Internal wiring 130 formed inside, lead terminal mounting pad 140 formed on the outer surface of the side wall of insulating base 120 and connected to internal wiring 130, and external lead terminal 150 attached to lead terminal mounting pad 140 And. FIG. 13 further shows a state in which the semiconductor element 170 is placed on the bottom surface of the recess 125 and the semiconductor element 170 and the internal wiring 130 are connected by the bonding wire 175. When manufacturing such a package for a semiconductor device, positioning is performed when the lead terminal mounting pad 140 is formed on the side surface of the insulating base 120 in order to secure the connection between the lead terminal mounting pad 140 and the internal wiring 130. The lead terminal mounting pad 140 is formed in consideration of the error accompanying the above. That is, formation of the lead terminal attachment pad 140 (side metallization on the insulating base 120) has been performed over the side of the insulating base 120 beyond the end of the internal wiring 130.

  As described above, when the lead terminal mounting pad 140 is formed above the insulating base 120 beyond the end of the internal wiring 130, the lead terminal mounting pad 140 exceeds the end of the internal wiring 130. The part formed in this way forms a stub circuit. When a stub circuit is formed in this way, particularly when a high-frequency signal is transmitted in a semiconductor device, the high-frequency signal is reflected in the stub circuit, which may reduce the transmission efficiency of the high-frequency signal.

  As a method for preventing the formation of such a stub circuit, a configuration is known in which a recess is provided on the external side surface of the insulating base at the top of the connection portion between the end of the internal wiring and the lead terminal mounting pad (for example, Patent Document 1). A schematic cross-sectional view of such a configuration is shown in FIG. In FIG. 14, the same reference numerals are given to portions common to FIG. 13, and a recess 190 is provided above the connection portion between the end portion of the internal wiring 130 and the lead terminal mounting pad 140. By providing the recess 190 in this way, the material for forming the lead terminal mounting pad 140 (hereinafter referred to as a metallized material) in the metallization of the side surface of the insulating base 120 is insulative beyond the connecting portion. This prevents the base 120 from adhering to the outer surface of the side wall.

Japanese Patent Laid-Open No. 11-214555

  However, when the depression 190 is formed in the upper portion of the connection portion as described above, it is necessary to form the depression 190 sufficiently deep in order to prevent the stub from being further formed in the depression 190. . FIG. 15 shows how a stub circuit is formed in a recess 190 in a semiconductor device package similar to FIG. FIG. 15 shows a state during the manufacturing process of the semiconductor device package, and the semiconductor element 170 and the bonding wire 175 are not shown. The state in which the metallized material for forming the lead terminal attachment pad 140 is supplied is indicated by arrows. When the lead terminal mounting pad 140 is thus formed, if the depth of the recess 190 is insufficient, the metallized material (shown as excess in FIG. 15) supplied to the position beyond the connecting portion is There is a possibility that a stub circuit is formed by adhering to a vertical surface (a surface shown as a vertical surface in FIG. 14) which is an inner wall surface of the depression 190 and on which the internal wiring 130 is not formed. However, the deeper the recess 190 is formed in order to avoid the formation of the stub circuit, there arises a problem that the insulating base 120 is easily deformed near the recess 190 during firing. The deformation of the insulating base 120 is, for example, when the lid is mounted on the insulating base 120 so as to cover the recess 125 after mounting the semiconductor element in the package. It may cause a decrease in brazing strength during.

  The present invention has been made to solve the above-described conventional problems, and an object of the present invention is to prevent formation of a stub circuit accompanying side metallization without causing deformation of an insulating base in a package for a semiconductor device. And

In order to achieve the above object, a first package for a semiconductor device of the present invention comprises:
A base layer having a mounting portion for mounting a semiconductor element, and a first recess provided on the base layer so as to surround the mounting portion and having the mounting portion as a bottom surface by an inner surface And a base portion comprising a side wall portion having a second recess formed on the outer surface,
A lead terminal mounting pad formed in contact with the second recess on the outer surface of the side wall,
An external lead terminal mounted on the lead terminal mounting pad;
One end formed in the vicinity of the mounting portion on the surface of the first recess, and a position on the surface of the second recess that is vertically away from a position where the second recess and the lead terminal mounting pad are in contact with each other. The internal wiring formed continuously from the one end to the other end through the inside of the side wall portion at the base portion,
A connecting conductor portion that covers a part of the surface of the second concave portion including the substantially vertical portion on the surface of the second concave portion and electrically connects the other end of the internal wiring and the lead terminal mounting pad. The gist is to provide and.

  According to the first semiconductor device package of the present invention configured as described above, the second concave portion is formed on the outer surface of the side wall portion, and the second concave portion is connected to the lead terminal mounting pad, The other end of the internal wiring is provided at a position away from the position where the second recess and the lead terminal mounting pad are connected in the vertical direction. Further, a connection conductor that covers a part of the surface of the second concave portion including the substantially vertical portion on the surface of the second concave portion and connects the other end of the internal wiring and the lead terminal mounting pad is formed. Therefore, when the lead attachment pad is formed on the outer surface of the side wall portion of the base portion, the formation of the stub circuit due to the material of the lead terminal attachment pad being deposited on the outer surface of the side wall portion beyond the second recess is prevented. be able to.

The second package for a semiconductor device of the present invention is
A base layer having a placement portion for placing a semiconductor element, and a side wall portion provided on the base layer so as to surround the placement portion, and forming a recess having the placement portion as a bottom surface by an inner surface A base comprising:
A lead terminal mounting pad formed on the outer surface of the side wall,
An external lead terminal mounted on the lead terminal mounting pad;
One end formed in the vicinity of the mounting portion on the surface of the concave portion, and the other end formed on the outer surface of the side wall portion at a position away from the lead terminal mounting pad in the vertical direction. An internal wiring continuously formed from the one end to the other end through the inside of the side wall,
The gist includes a connection conductor portion that forms the same surface as the outer surface of the side wall portion and that electrically connects the other end of the internal wiring to the lead terminal mounting pad.

  According to the second package for a semiconductor device of the present invention configured as described above, the connection conductor portion that forms the same surface as the side wall portion has the connection conductor portion connected to the lead terminal mounting pad. The connecting conductor portion and the lead terminal mounting pad are connected to the other end of the internal wiring at a position away from the connecting position in the vertical direction. Therefore, when the lead terminal mounting pad is formed on the outer surface of the side wall portion of the base portion, the formation of the stub circuit on the outer surface of the side wall portion due to the material of the lead terminal mounting pad can be prevented.

  If a semiconductor device is manufactured using such a package for the first and second semiconductor devices of the present invention, the formation of a stub circuit in the device is prevented, so that the transmission efficiency of high-frequency signals in the device is reduced. Can be prevented. The vertical direction refers to a direction perpendicular to the base layer forming the mounting portion in the semiconductor device package.

  In the first or second semiconductor device package of the present invention, the base portion may be formed of a ceramic laminate. In the first semiconductor device package of the present invention, since it is not necessary to form the second concave portion deeply in order to prevent the formation of the stub circuit in the second concave portion, the base portion is formed of a ceramic laminate. In addition, it is possible to suppress the deformation of the base that occurs during firing by providing the second recess. Moreover, since the 2nd package for semiconductor devices of this invention does not have a recessed part in a side wall part, a base part does not deform | transform at the time of baking resulting from a recessed part.

According to a first aspect of the present invention, there is provided a method for manufacturing a package for a semiconductor device, comprising: a package for a semiconductor device formed by a ceramic laminate having a first recess having a mounting portion for mounting a semiconductor element on a bottom surface; A manufacturing method comprising:
(A) preparing a plurality of ceramic green sheets;
(B) a step of forming a first hole in each of a part of the plurality of ceramic green sheets prepared in the step (a);
(C) forming a second hole smaller than the first hole together with the first hole in each of the other parts of the plurality of ceramic green sheets;
(D) A step of printing a predetermined wiring pattern on the surface of a part of the plurality of ceramic green sheets in which the holes are formed in the step (b) and the step (c), ) For the part of the green sheet in which the hole is formed in the step, the step of printing the first wiring portion having a size corresponding to the second hole, and the hole in the step (c) A step of printing a second wiring portion having an end portion reaching the second hole with respect to at least a portion of the other part of the ceramic green sheet formed of
(E) forming a first metallized layer on the inner wall surface of the second hole formed in the step (c);
(F) A green sheet on which the second wiring portion is overlapped on the first wiring portion to connect the first wiring portion and the first metallized layer, and on which the second wiring portion is printed. The plurality of ceramic green sheets are laminated in a predetermined order so that the surface of the green sheet is in contact with the green sheet in which the second hole part and the first wiring part are not formed. Forming a ceramic green sheet laminate including the first recess formed by overlapping and the internal wiring continuously formed as a whole including the wiring pattern formed in the step (d). In the process, the internal wiring has one end formed in the vicinity of the bottom surface of the first recess and the other end that is a connection portion between the second wiring portion and the first metallized layer. As the ceramic green Laminating the over door,
(G) The ceramic green sheet laminate is divided by cutting at a position passing through the second hole, has the first recess, and has the first metallized layer and the first at the cut surface. Forming a split laminated body having a second recess having one wiring part as a part of the surface;
(H) The cut surface of the divided laminate and the side surface of the continuously laminated ceramic green sheet including the ceramic green sheet on which the first wiring portion is formed. Forming a second metallized layer connected to the first wiring portion at a position adjacent to the stacking direction of the stack;
And (i) a step of firing the divided laminate after the step (h).

  According to the first method for manufacturing a semiconductor device package of the present invention configured as described above, the first semiconductor device package of the present invention formed of a ceramic laminate can be manufactured. When manufacturing a package for a semiconductor device, the second metallized layer formed on the cut surface of the divided stacked body is provided so as to be connected to the first wiring part which is a part of the surface of the second recess. Therefore, it is possible to prevent the material of the second metallized layer from adhering to the cut surface of the split laminated body beyond the second recess. At this time, the material of the second metallized layer supplied into the second concave portion adheres to the first wiring portion or the first metallized layer which is a part of the surface of the second concave portion. However, a stub circuit is not formed. Accordingly, when a semiconductor device is manufactured using the manufactured semiconductor device package, it is possible to prevent a reduction in transmission efficiency of a high-frequency signal due to a stub circuit generated in the device. Further, since it is not necessary to form the second concave portion deeply in order to prevent the formation of the stub circuit, it is possible to suppress the deformation of the divided laminated body at the time of firing due to the formation of the second concave portion.

The second method for manufacturing a package for a semiconductor device of the present invention is a method for manufacturing a package for a semiconductor device formed by a ceramic laminate having a recess having a mounting portion for mounting a semiconductor element on the bottom surface. A method,
(A) preparing a plurality of ceramic green sheets;
(B) forming a first hole in each of a part of the plurality of ceramic green sheets prepared in the step (a);
(C) In each of the other part of the plurality of ceramic green sheets, a second hole smaller than the first hole is formed together with the first hole, and the second hole is formed in the second hole. Filling the conductive material with
(D) A step of printing a predetermined wiring pattern on the surface of a part of the plurality of ceramic green sheets in which the holes are formed in the step (b) and the step (c), ) For at least a part of the other ceramic green sheets having the hole formed in the step, a wiring part having an end reaching the second hole filled with the conductive material is provided. Printing process;
(E) laminating the plurality of ceramic green sheets in a predetermined order so that a surface of the ceramic green sheet on which the wiring portion is printed is in contact with a ceramic green sheet not provided with the second hole; A ceramic green sheet laminate comprising: the concave portion formed by overlapping one hole portion; and an internal wiring continuously formed as a whole including the wiring pattern formed in the step (d). In the forming step, the internal wiring has one end formed in the vicinity of the bottom surface of the concave portion and the other end that is a connection portion between the second hole portion filled with the conductive material. Laminating the ceramic green sheet on
(F) The ceramic green sheet laminate is divided by cutting at a position passing through the second hole filled with the conductive material, has the recess, and has the second hole on the cut surface. Forming a split laminate having a connection conductor portion made of the conductive material filled in the portion;
(G) a ceramic green sheet which is a cut surface of the divided laminated body and is in contact with the ceramic green sheet on which the wiring portion is formed, among ceramic green sheets which are in contact with the ceramic green sheet on which the connection conductor portion is formed; Forming a metallized layer at a position overlapping a predetermined length in the stacking direction of the connection conductor portion and the split laminate on the side surface of the continuously stacked ceramic green sheets including different ceramic green sheets;
And (h) a step of firing the divided laminate after the step (g).

  According to the second method for manufacturing a semiconductor device package of the present invention configured as described above, the second semiconductor device package of the present invention formed of a ceramic laminate can be manufactured. When manufacturing a package for a semiconductor device, the metallized layer formed on the cut surface of the divided laminated body is positioned so as to overlap with a connection conductor portion connected to the internal wiring with a predetermined length in the lamination direction of the divided laminated body. Since it is formed, the material of the metallized layer does not adhere to the cut surface of the divided laminated body beyond the connecting conductor portion. Thereby, when a semiconductor device is manufactured using the manufactured semiconductor device package, it is possible to prevent a reduction in transmission efficiency of a high-frequency signal due to a stub circuit generated in the device. Moreover, since it is not necessary to form a recessed part in the cut surface of a division | segmentation laminated body in order to prevent formation of a stub circuit, the deformation | transformation of the division | segmentation laminated body at the time of baking resulting from formation of a recessed part can be suppressed.

  The present invention can be realized in various forms other than those described above. For example, the present invention can be realized in the form of a semiconductor device or a method for manufacturing a semiconductor device.

Next, embodiments of the present invention will be described in the following order based on examples.
A. Package structure:
B. Manufacturing process:
C. Modification of the first embodiment:
D. Second embodiment:
E. Variations:

A. Package structure:
FIG. 1 is a schematic cross-sectional view showing the configuration of a semiconductor device package 10 (hereinafter referred to as a package 10) according to a first embodiment of the present invention, and FIG. 2 is a perspective view showing the configuration of the package 10. As shown in FIG. FIG. 1 shows a cross section 1-1 in FIG. As shown in FIG. 1, the package 10 of the present embodiment includes a base portion 20 formed of four alumina ceramic layers (ceramic layers 21 to 24). The base 20 is formed with a first recess 25 whose bottom surface serves as a mounting portion for mounting the semiconductor element 70. That is, the base portion 20 includes a ceramic layer 21 and a base layer having the placement portion described above, and ceramic layers 22 to 24 each having a hole having a shape surrounding the placement portion in the vertical direction on the base layer. And a first concave portion 25 is formed by the inner surface of the side wall portion. In the following description, the direction of arrow A shown in FIG. 1 is called the vertical direction, and the direction of arrow B is called the horizontal direction. Here, the direction of the arrow B is a direction parallel to the surfaces of the ceramic layers 21 to 24, and the direction of the arrow A is a direction perpendicular to the surface direction (stacking direction of the ceramic layers).

  Further, the package 10 of this embodiment has one end formed in the vicinity of the mounting portion on the surface of the first recess 25 (the inner surface of the side wall) and the other end formed on the outer surface of the side wall of the base 20. The base 20 has an internal wiring 30 formed continuously from the one end to the other end through the inside of the side wall of the base 20. Further, as shown in FIGS. 1 and 2, the package 10 of the present embodiment includes a lead terminal mounting pad 40 formed on the outer surface of the side wall portion of the base portion 20 and an external lead attached to the lead terminal mounting pad 40. And a lead terminal 50 which is a terminal. In the package 10 of the present embodiment, there are 8 sets of the internal wiring 30, the lead terminal mounting pad 40 and the lead terminal 50 (in FIG. 2, the lead terminal 50 on the front side in the figure). There are four lead terminal mounting pads 40 to which are attached).

  Further, on the outer surface of the side wall portion of the base portion 20, two of the eight lead terminal mounting pads 40 are provided with second concave portions 60 in contact with the lead terminal mounting pads 40 (FIG. 2). Shows only one of them). This second recess 60 is in contact with the other end of the corresponding internal wiring 30 in addition to the lead terminal mounting pad 40. The second recess 60 is formed so as to cover a part of the surface of the second recess 60 and electrically connects the other end of the internal wiring 30 and the end of the lead terminal mounting pad 40. 62 is formed. The lead terminal mounting pad 40 that is not adjacently provided with the second recess 60 is directly connected to the other end of the corresponding internal wiring 30. In FIG. 2, the description is simplified, and eight combinations of the internal wiring 30, the lead terminal mounting pad 40, and the lead terminal 50 are described. These are electrodes of a semiconductor element to be mounted in the package. The number corresponding to is appropriately provided. Further, of the eight sets, two sets are further provided with the second recess 60, and these are appropriately provided in a number corresponding to the electrodes of the high-frequency wiring.

  FIG. 3 is a perspective view of a part of the package 10 for explaining the configuration of the second recess 60. In FIG. 3, the ceramic layer 24 that actually exists is not described, and the state in which only the ceramic layers 21 to 23 are stacked is illustrated with the second recess 60 as the center. As shown in FIG. 3, the second recess 60 is formed on the ceramic layer 22 so that the ceramic layer 23 having a substantially rectangular notch on the outer periphery overlaps the outer periphery of the ceramic layer 22 on the outer periphery other than the notch. It is formed by laminating. Here, the connection conductor portion 62 includes a region corresponding to the cutout portion on the upper surface of the ceramic layer 22 (region A in FIG. 3), and an inner wall surface (in FIG. 3) that forms the cutout portion in the ceramic layer 23. Region B, which is a substantially vertical portion on the surface of the second recess 60), is formed by a conductor that covers the surface. Note that the surface of the ceramic layer 24 does not have a conductor layer, and the other surface of the second recess 60 formed by the ceramic layer 24 (the surface not shown facing the region A in FIG. 3) The connection conductor part 62 is not formed. In the package 10 of the present embodiment, as described above, the outer surface of the side wall portion of the base portion 20 corresponds to the two internal wirings 30 of the internal wirings 30 for connecting the semiconductor element 70 and the lead terminals 50. In addition, such a second recess 60 is provided. In FIG. 1, the semiconductor element 70 is further placed on the placement portion that is the bottom surface of the first recess 25 formed in the package 10, and the semiconductor element 70 and the internal wiring 30 are connected by the bonding wires 75. Show.

B. Manufacturing process:
FIG. 4 is an explanatory view showing the manufacturing process of the package 10 of this embodiment. First, green sheets for forming the ceramic layers 21 to 24 constituting the base 20 are prepared (step S100), and then a predetermined pattern is formed on each green sheet (step S110). Specifically, the pattern formation includes metallization on the surface of the green sheet, punching a predetermined portion by punching, and metallization (through-hole printing) of the inner wall surface of the formed hole.

  The state of each green sheet after pattern formation is shown in FIGS. 5A, FIG. 5B, FIG. 6A, and FIG. 6B show the states of green sheets corresponding to the ceramic layer 21, the ceramic layer 22, the ceramic layer 23, and the ceramic layer 24, respectively. Show. 5 and FIG. 6, the whole is simplified and described mainly to explain the manufacturing process of the second recess 60 and the connection conductor 62. When the package 10 is manufactured, as will be described later, a large number of packages 10 are manufactured from one stacked body by cutting the stacked body of the green sheets. In FIGS. Is shown as a cutting line, and an area corresponding to one package 10 is shown in the center.

  The green sheet used as the ceramic layer 21 does not have a special structure related to the second recess 60, the connection conductor 62, or the internal wiring 30 (see FIG. 5A). The green sheet to be the ceramic layer 22 has a hole 22a formed in a substantially square shape to form the first recess 25, and a part of the connection conductor 62 (region A in FIG. 3). And two first wiring portions 22b for forming (see FIG. 5B). The green sheet to be the ceramic layer 23 has a hole portion 23a formed in a substantially square shape for forming the first recess 25 and a hole portion 23a smaller than the hole portion 23a for forming the second recess 60. Two hole portions 23b formed in a substantially rectangular shape, and a metallized layer 23c formed so as to cover the inner wall of the hole portion 23b and constituting a part of the connection conductor portion 62 (region B in FIG. 3); Eight second wiring portions 23d for forming the internal wiring 30 are formed (see FIG. 6A). Here, the hole 23b is actually rounded at its four corners. Of the eight second wiring portions 23d, the two second wiring portions 23d are provided continuously from the vicinity of the hole 23a to the hole 23b, and are connected to the metallized layer 23c. The remaining second wiring portion 23d is provided continuously from the vicinity of the hole portion 23a to the cutting line. Further, the hole portion 23b is formed at a position overlapping the first wiring portion 22b of FIG. In the green sheet to be the ceramic layer 24, a hole portion 24a formed in a substantially square shape is formed to form the first recess 25 (see FIG. 6B). In this embodiment, the hole 22a and the hole 23a are formed in the same shape, and the hole 24a is formed larger than the holes 22a and 23a. What is necessary is just to set arbitrarily according to the magnitude | size of the element 70 and the shape of the 1st recessed part 25 which should be formed.

  In this embodiment, a paste containing tungsten is used for metallizing each green sheet. For metallization, metals having a melting point higher than the firing temperature of alumina ceramic, such as molybdenum and manganese, can be used in addition to tungsten. Here, the surface metallization for forming the first wiring portion 22b and the second wiring portion 23d is performed by a well-known thick film forming method such as a screen printing method using tungsten paste. The side metallization for forming the metallized layer 23c is performed by applying a tungsten paste to the inner wall surface of the hole 23b by through-hole printing, specifically, suction.

  When pattern formation is performed on each green sheet, these green sheets are then aligned in a predetermined order (FIGS. 5A, 5B, 6A, and 7B) while performing alignment. ) In order), and the whole is pressure-bonded to obtain a green sheet laminate (step S120). By laminating the green sheets in this way, the first wiring portion 22b formed on the green sheet of FIG. 5B and the metallized layer 23c formed on the green sheet of FIG. 6A are connected. Is done. Here, in order to ensure the connection between the first wiring portion 22b and the metallized layer 23c, the first wiring portion 22b is formed larger than the hole portion 23b. Since the accuracy of the surface metallization and the alignment accuracy when the green sheets are stacked are extremely high, the margin provided in the first wiring part 22b for securing the connection with the metallization layer 23c may be about 0.1 mm. . In addition, by stacking the green sheets, the holes 22a, 23a, and 24a formed in the green sheet are overlapped to form a recess corresponding to the first recess 25.

  Next, this green sheet laminated body is cut | disconnected in the position corresponding to the cutting line of FIG. 5 and FIG. 6, and a some division | segmentation laminated body is obtained (step S130). By cutting the green sheet laminate at the cutting line, the individual first wiring portions 22b, the hole portions 23b, and the metallized layer 23c formed on the inner walls of the hole portions 23b are divided into two at the center portion. Thereby, the divided hole portion 23b forms a structure corresponding to the second recess 60 in a separate divided laminated body, and the divided first wiring portion 22b and the metallized layer 23c are formed in a separate divided laminated body. Thus, a structure corresponding to the connection conductor portion 62 is formed. In the following description, such a structure formed in the divided laminated body is also referred to as a second recess 60 and a connection conductor portion 62 as in the completed package 10. In this way, by forming the hole portion 23b, the first wiring portion 22b, and the metallized layer 23c so as to be divided into two at the cutting line, the divisional lamination having the second concave portions 60 at positions corresponding to each other in the outer peripheral portion. You can get a body.

  Thereafter, side metallization for forming the lead terminal attachment pad 40 is performed on a predetermined position of each divided laminated body (step S140). As the side metallization process in step S140, each of the divided laminates obtained in step S130 is fitted into a predetermined jig in such a direction as to be printable with respect to the side surface, and the shape of the lead terminal mounting pad 40 is set. The corresponding pattern is masked, and printing using a conductive material such as tungsten paste is performed to form a metallized layer to be the lead terminal mounting pad 40. The lead terminal mounting pad 40 formed by the side metallization in step S140 is usually formed so that its width is approximately the same as the width of the internal wiring 30.

  As described above, when printing is performed with the divided laminated body fitted in a jig, positional deviation (positioning error) is likely to occur compared to the position alignment for surface metallization and green sheet lamination. Therefore, in order to ensure the connection between the lead terminal mounting pad 40 and the connection conductor portion 62, in step S140, the position of the end portion of the connection conductor portion 62 on the side surface of the divided laminated body (the position corresponding to the upper surface of the ceramic layer 22). On the other hand, metallization is performed in a longer range above the side wall with a margin of about 0.3 to 0.5 mm. The state of the side metallization in step S140 is schematically shown in FIG. FIG. 7 is a schematic cross-sectional view of a divided laminated body that mainly shows the state around the second recess 60. In FIG. 7, the state in which the conductive material is supplied to the side surface of the divided laminate for side metallization is indicated by arrows. As shown in FIG. 7, the conductive material (indicated as excess in FIG. 7) supplied above the end of the connection conductor 62 on the side surface of the divided laminate enters the inside of the second recess 60. Thus, it is integrated with the connection conductor 62. The side metallization for the portion not having the second recess 60 is performed with respect to the position of the end portion of the internal wiring 30 on the side surface of the divided laminated body in order to secure the connection between the lead terminal mounting pad 40 and the internal wiring 30. Provide a longer range with sufficient margin.

  After the side metallization in step S140, the divided laminate is fired (step S150). The firing of the alumina ceramic can be performed at 1500 to 1700 ° C. Then, the lead terminal 50 for connecting to an external electric circuit is connected on the lead terminal attachment pad 40 (step S160). In the present embodiment, the lead terminal 50 is manufactured by performing nickel plating on a member formed of an iron-nickel (Fe-Ni) alloy or iron-nickel-cobalt (Fe-Ni-Co) alloy. Moreover, the connection of the lead terminal 50 to the lead terminal mounting pad 40 is performed using silver brazing (Ag—Cu alloy). Further, in order to satisfactorily connect the lead terminal mounting pad 40 and the lead terminal 50 by brazing, in this embodiment, after the firing in step S150, the surface of the lead terminal mounting pad 40 is plated with nickel. ing.

  Thereafter, the entire divided laminated body is plated (step S170), and the package 10 is completed. The plating process can be performed, for example, by electrolytic plating, whereby the metal portion exposed on the surface of the ceramic laminate is plated. The plating process is a process for ensuring the corrosion resistance of the metal part, and in this embodiment, nickel-gold (Ni-Au) plating is applied.

  In order to fabricate a semiconductor device using such a package 10, a semiconductor element is bonded onto the mounting portion of the package 10 using solder or the like, and each electrode of the semiconductor element and the corresponding internal wiring 30 are formed. The ends are connected by bonding wires 75. After that, a metal ring (metal upper surface and further metal ring (for example, nickel-iron-cobalt alloy) sealed with silver brazing) and a predetermined lid are welded or the upper part of the package is attached. After the metallization, a lid is adhered using solder, and the first recess 25 in which the semiconductor element is placed is hermetically sealed, thereby completing the semiconductor device.

  According to the package 10 of the present embodiment configured as described above, an extra conductive material is used in high-frequency wiring even if a wide area for side metallization is set in consideration of misalignment in side metallization processing. Is supplied to the inside of the second recess 60 and integrated with the connection conductor 62, so that an undesirable stub circuit derived from the internal wiring 30 is not formed. Here, not only the horizontal surface (region A in FIG. 3) formed on the ceramic layer 22 but also the vertical surface (region B in FIG. 3) which is the side surface of the ceramic layer 23 is formed inside the second recess 60. A connection conductor 62 (conductor layer) is formed. Therefore, even when the conductive material that has entered the second recess 60 during the side metallization reaches the vertical surface, a conductive layer is formed on the already formed conductive layer. Therefore, a new undesirable circuit is not formed. Therefore, it is not necessary to form the second recess 60 deeply in order to prevent the formation of a new stub circuit due to the conductive material adhering to the vertical surface during side metallization. By suppressing the depth, deformation of the ceramic laminate during firing can be prevented. Here, it is possible to provide the second recess 60 also for wiring other than the high-frequency wiring. However, the problem caused by the formation of the stub circuit and the effect obtained by forming the second recess 60 are high-frequency wiring. In this embodiment, the second rear portion 60 is provided only for the high-frequency wiring.

  Note that the vertical diameter of the second recess 60 (corresponding to the thickness of the green sheet serving as the ceramic layer 23 in the embodiment) is longer and metallized above the outer surface of the side wall portion of the divided laminate during side metallization. It is desirable to make it long enough to exceed the length to be performed. Thereby, formation of the conductor layer above the outer surface of the side wall portion of the divided laminated body beyond the second recess 60 can be prevented. However, even if a conductor layer is formed over the outer surface of the side wall portion of the divided laminate beyond the second recess 60, the conductor layer and the connection conductor portion 62 are not connected in this example. Since there is no problem in electrical characteristics, it may be allowed to make the vertical diameter of the second recess 60 smaller as necessary. For example, in order to secure the mounting strength of the lead terminal 50, it is necessary to sufficiently secure the length of the bonding portion between the lead terminal 50 and the lead terminal mounting pad 40. Based on this, an upper limit can be set for the diameter of the second recess 60 in the vertical direction. From such a viewpoint, the diameter in the vertical direction of the second recess 60 can be set to 0.15 to 0.50 mm, for example.

C. Modification of the first embodiment:
Although the base portion 20 of the package 10 of the first embodiment is formed by four ceramic layers, the base portion 20 may be formed by stacking more ceramic layers. Alternatively, in the package 10 of the first embodiment, the internal wiring 30 is formed only on the ceramic layer 23 that is one of the laminated ceramic layers. Alternatively, the internal wiring 30 may be formed. In this case, in the surface metallization process in step S110, the surface metallization for forming the internal wiring 30 can be performed not only on the green sheet to be the ceramic layer 23 but also on the other predetermined green sheet surface. It ’s fine. Further, in this case, in the pattern formation step of step S110, a predetermined connection is formed in order to form vias that three-dimensionally connect the wiring patterns formed on the surfaces of the plurality of green sheets (connect between the layers). A via hole may be formed at a predetermined position of the green sheet by a drilling process. In addition, when the green sheet which should perform this drilling process is a green sheet which should form the hole part 23b mentioned above, these drilling processes can be performed simultaneously. When the internal wiring 30 is formed three-dimensionally, in the pattern formation in step S110, a process of forming a via by filling the via hole with a conductive material (embedding printing) can be performed. It ’s fine. Here, in order to form a via, a paste containing a metal having a melting point higher than the firing temperature of alumina ceramic, such as tungsten, may be used, as in the surface metallization step and the hole metallization step. .

  In addition, the notch for forming the second recess 60 is not formed only in the ceramic layer 23 which is one of the laminated ceramic layers, but a plurality of ceramic layers that are continuously laminated. You may form over.

  The second recess 60 may have a different shape. For example, a substantially vertical portion (a portion corresponding to the region B in FIG. 3) in the second recess 60 may be a curved surface. An end portion of the internal wiring 30 is formed at a position away from the position where the second recess 60 and the lead terminal mounting pad 40 are in contact with each other in the vertical direction, and the end portion and the lead terminal mounting pad 40 are the second end. If the connection conductor 62 is formed so as to cover a part of the surface of the second recess 60 including the substantially vertical portion on the surface of the recess 60, the same effect can be obtained.

D. Second embodiment:
FIG. 8 is a schematic cross-sectional view showing the configuration of the semiconductor device package 110 (hereinafter referred to as the package 110) of the second embodiment, and FIG. 9 is a perspective view showing the configuration of the package 110. FIG. 8 shows an 8-8 cross section in FIG. The package 110 has the same structure as the package 10 of the first embodiment except that the package 110 has a connection conductor 162 instead of the second recess 60 and the connection conductor 62. A reference number is attached and detailed description is omitted.

  The package 110 has a connection conductor portion 162 in a second recess similar to the second recess 60 in the package 10 of the first embodiment. FIG. 10 is a perspective view of a part of the package 110 for explaining the configuration of the connection conductor portion 162. In FIG. 10, as in FIG. 3 of the first embodiment, the ceramic layer 24 that actually exists is not described, and only the ceramic layers 21 to 23 are stacked, with the connection conductor portion 162 as the center. It represents.

  As shown in FIG. 10, the connection conductor 162 is provided so as to form the same surface as the outer surface of the side wall of the package 110 in the second recess. In other words, the connection conductor portion 162 is formed with no step with respect to the outer surface of the side wall of the package 110 and is formed as a conductor provided so as to fill the second recess. The connection conductor 162 is provided so as to penetrate the ceramic layer 23 in the thickness direction.

  Here, the internal wiring 30 formed inside the package 110 (the surface of the ceramic layer 23 in this embodiment) has one end in the vicinity of the semiconductor element 70 and the outer surface of the side wall of the package 110 as in the first embodiment. Has the other end (see FIG. 8). On the outer surface of the side wall of the package 110, the other end of the internal wiring 30 and the lead terminal mounting pad 40 are formed at a predetermined distance apart in the vertical direction. In the package 110 of the second embodiment, the other end of the internal wiring 30 and the lead terminal mounting pad 40 are connected by the connection conductor portion 162.

  FIG. 11 is an explanatory diagram showing a manufacturing process of the package 110. When forming the package 110, a green sheet for forming each layer is prepared in the same manner as in step S100 of FIG. 4 (step S200), and then a predetermined pattern is formed on each green sheet (step S210). A state of the green sheet corresponding to the ceramic layer 22 is shown in FIG. 12A, and a state of the green sheet corresponding to the ceramic layer 23 is shown in FIG. The state of the green sheet corresponding to the ceramic layer 21 is the same as that of FIG. 5A of the first embodiment, and the state of the green sheet corresponding to the ceramic layer 24 is the same as that of FIG.

  In the second embodiment, unlike the first embodiment, the first wiring portion 22b is not formed in the green sheet corresponding to the ceramic layer 22, and only the hole portion 22a is formed (FIG. 12A). (See FIG. 5B). The green sheet corresponding to the ceramic layer 23 is not formed with the hole 23b having the metallized layer 23c on the inner wall surface. Instead, the conductor forming part 23e for forming the connection conductor 162 is provided with the hole 23b. Is provided by filling a conductor (see FIGS. 12B and 6A). The second wiring part 23d and the hole part 23a are formed in the same manner as in the first embodiment. Therefore, when pattern formation is performed on the green sheet corresponding to the ceramic layer 23, first, a hole forming process for providing the hole 23a and the hole 23b is performed, and then the conductive paste is applied to the hole 23b. Is filled (hole filling printing) to form a conductor forming portion 23e. Then, it is only necessary to metallize the surface of the green sheet to form the eight second wiring portions 23d for forming the internal wiring 30. Here, of the eight second wiring portions 23d, two second wiring portions 23d are continuously provided from the vicinity of the hole 23a to the conductor forming portion 23e. In addition, as for the conductor formation part 23e, it is desirable for the planar shape to make the corner | angular part round shape (for example, elliptical shape or circular shape). In the hole-filling printing for forming the conductor forming portion 23e, a metal paste (for example, tungsten paste) having a melting point higher than the firing temperature of the alumina ceramic may be used as in the case of surface metallization.

  After pattern formation, green sheets are laminated to form a green sheet laminate as in step S120 (step S220), and the green sheet laminate is cut along a cutting line as in the first embodiment. A plurality of divided laminates are obtained (step S230). By cutting the green sheet laminate at the cutting line, each conductor forming portion 23e is divided into two at the central portion. Thereby, the divided conductor forming portion 23e forms a structure corresponding to the connection conductor portion 162 in a separate divided laminated body. In the following description, such a structure formed in the split laminated body is also referred to as a connection conductor portion 162, as in the completed package 110.

  Thereafter, similarly to steps S140 to S170 of the first embodiment, side metallization, firing, attachment of the lead terminals 50, and plating are performed (steps S240 to S270), and the package 110 is completed. Here, in the side metallization step of step S240, metallization is performed in a longer range above the side wall with a margin of about 0.3 to 0.5 mm from the lower surface of the ceramic layer 23. As a result, the lead terminal attachment pad 40 is formed at a position that is overlapped with the connection conductor portion 162 by a predetermined length and shifted downward in the vertical direction (stacking direction of the divided laminated body) with respect to the connection conductor portion 162.

  According to the package 110 of the second embodiment configured as described above, even if a wide area for performing the side metallization is set in consideration of misalignment in the side metallization process, the excess conductive material is not contained in the base 20. It is only necessary to form a portion overlapping the connecting conductor portion 162 in the lead terminal mounting pad 40 on the outer surface of the side wall portion. Therefore, similarly to the first embodiment, it is possible to prevent formation of an undesirable stub circuit derived from the internal wiring 30.

  In addition, when the lead terminal attachment pad 40 is formed so that the diameter in the vertical direction of the connection conductor portion 162 (corresponding to the thickness of the green sheet serving as the ceramic layer 23 in the embodiment) overlaps with the connection conductor portion 162. Considering the magnitude of positioning error when performing side metallization, the lead terminal mounting pad 40 is made sufficiently long so as not to be formed in the vertical direction beyond the connecting conductor portion 162. Thereby, when connecting the other end of the internal line located away in the vertical direction and the lead terminal mounting pad 40 by the connecting conductor portion 162, formation of a stub circuit can be prevented.

  Further, according to the package 110 of the second embodiment, the connection conductor portion 162 is formed by filling the hole portion 23b formed in the green sheet with the conductive paste, and is embedded in the side wall portion of the base portion 20. It has become. Thus, since a recessed part and a hole part are not formed in the side wall part of a package, a deformation | transformation of the ceramic laminated body at the time of baking can be prevented. In addition, when providing a recessed part and a hole part in a side wall part, in the plating process in the manufacturing process of a package, a plating solution remains in the said 2nd recessed part and hole part, and it completes due to this residual plating solution. In the package, the conductor provided in the second recess or hole may be discolored. According to the package 110 of the second embodiment, no recess or hole is provided in the side wall portion of the base portion 20, and thus such a problem does not occur. Further, in the manufacturing process, there is no need to consider the possibility that foreign matter (so-called dust or dust) will enter the recesses or holes provided in the side wall.

  In the package 110 of the second embodiment, as in the first embodiment, the internal wiring 30 is formed only on the ceramic layer 23, but the three-dimensional wiring formed over a plurality of layers. It is also good. In this case, as described above, in order to connect the wirings formed on the surfaces of the plurality of layers, vias are formed by a hole making process and hole filling printing. When the connection conductor portion 162 of the present embodiment is provided in the package having the three-dimensional wiring as described above, the hole forming process and the hole filling printing process for forming the connection conductor portion 162 are performed for the via formation. It becomes possible to carry out simultaneously with this process. Therefore, when the connection conductor portion 162 is further provided, the manufacturing process is not particularly increased or complicated. The manufacturing process can be simplified without the need for a hole metallizing step (through-hole printing) in the first embodiment.

  Further, the connection conductor portion 162 may be formed not only on the ceramic layer 23 that is one of the laminated ceramic layers but over a plurality of ceramic layers that are continuously laminated.

E. Variations:
The present invention is not limited to the above-described examples and embodiments, and can be implemented in various modes without departing from the gist thereof. For example, the following modifications are possible.

E1. Modification 1 (process modification):
The semiconductor device package of the embodiment can be deformed into various shapes. For example, in the first or second embodiment, the step of firing (step S150 or S250) is performed once after the side metallization (step S140 or S240) step, but the number of firings may be further increased. . For example, the first firing is performed after the step of cutting the ceramic green sheet to produce a divided laminate (step S130 or S230), and the side metallization (step S140 or S240) is performed after the first firing. It is good also as performing after that and baking for the second time. In this case, the first firing step may be performed at a temperature (1500 to 1700 ° C.) at which the green sheet can be sufficiently fired. The second baking step may be performed at a temperature (for example, 1300 ° C.) that is sufficient for baking the conductive material used for the side metallization and is lower than the first baking step.

E2. Modification 2 (shape deformation):
A semiconductor device formed by using the package 10 or the package 110 may be a face-down type in which the lead terminals 50 are provided so as to protrude upward in the vertical direction. In this case, in the first embodiment, the second recess 60 in contact with the lead attachment pad 40 on the outer surface of the side wall of the base portion 20 is formed on the lower side in the vertical direction with respect to the attachment position of the lead attachment pad 40. That's fine. Further, in the second embodiment, the connection conductor portion 162 may be formed on the outer surface of the side wall portion of the base portion 20 below the vertical direction while overlapping with the lead terminal mounting pad 40.

E3. Modification 3 (material deformation):
The base 20 may be formed of ceramics other than alumina ceramic. For example, it can be formed of glass ceramic. In this case, the surface metallization and the side metallization may be performed using a metal having a melting point higher than the firing temperature of the glass ceramic. Since the firing temperature of the glass ceramic is generally 800 to 900 ° C., which is lower than that of the alumina ceramic, for example, metallization can be performed using Cu or Ag.

  In addition, in the base 20 of the package 10 or the package 110, at least a part of the base layer may be made of metal instead of forming the base layer by the ceramic layer 21. With such a configuration, the heat dissipation of the semiconductor device package can be improved.

E4. Modification 4 (Modification of semiconductor device type):
The semiconductor element mounted on the semiconductor device package of the present invention is not limited to a semiconductor element that transmits only an electric signal, but may be an optical semiconductor element that transmits an optical signal. In any case, if a high-frequency signal is transmitted in the semiconductor device, the above-described effect can be obtained by suppressing the formation of the stub circuit.

1 is a schematic cross-sectional view illustrating a configuration of a semiconductor device package 10. 2 is a perspective view illustrating a configuration of a package 10. FIG. FIG. 6 is a perspective view of a part of a base 20. FIG. 10 is an explanatory diagram illustrating a manufacturing process of the semiconductor device package 10. It is explanatory drawing showing the mode of each green sheet after giving pattern formation. It is explanatory drawing showing the mode of each green sheet after giving pattern formation. FIG. 6 is a schematic cross-sectional view of a divided laminated body that mainly represents the state around the second recess 60. 2 is a schematic cross-sectional view illustrating a configuration of a semiconductor device package 110. FIG. 2 is a perspective view illustrating a configuration of a package 110. FIG. FIG. 5 is a perspective view of a part of a base 20. FIG. 10 is an explanatory diagram illustrating a manufacturing process of the package 110. It is explanatory drawing showing the mode of the green sheet after giving pattern formation. It is a cross-sectional schematic diagram showing an example of a structure of the package for semiconductor devices known conventionally. It is a cross-sectional schematic diagram showing an example of a structure of the package for semiconductor devices known conventionally. It is explanatory drawing showing a mode that a stub circuit is formed.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,110 ... Semiconductor device package 20, 120 ... Base part 21-24 ... Ceramic layer 22a, 23a, 23b, 24a ... Hole part 22b ... 1st wiring part 23c ... Metallization layer 23d ... 2nd wiring part 23e ... Conductor Forming part 25 ... 1st recessed part 30, 130 ... Internal wiring 40, 140 ... Lead terminal attachment pad 50, 150 ... Lead terminal 60 ... 2nd recessed part recessed part 62 ... Connection conductor part 70, 170 ... Semiconductor element 75, 175 ... Bonding wire 125 ... concave part 162 ... connecting conductor part 190 ... depression

Claims (5)

A package for a semiconductor device,
A base layer having a mounting portion for mounting a semiconductor element, and a first recess provided on the base layer so as to surround the mounting portion and having the mounting portion as a bottom surface by an inner surface And a base portion comprising a side wall portion having a second recess formed on the outer surface,
A lead terminal mounting pad formed in contact with the second recess on the outer surface of the side wall,
An external lead terminal mounted on the lead terminal mounting pad;
One end formed in the vicinity of the mounting portion on the surface of the first recess, and a position on the surface of the second recess that is vertically away from a position where the second recess and the lead terminal mounting pad are in contact with each other. The internal wiring formed continuously from the one end to the other end through the inside of the side wall portion at the base portion,
A connecting conductor portion that covers a part of the surface of the second concave portion including the substantially vertical portion on the surface of the second concave portion and electrically connects the other end of the internal wiring and the lead terminal mounting pad. A package for a semiconductor device comprising: A package for a semiconductor device,
A base layer having a placement portion for placing a semiconductor element, and a side wall portion provided on the base layer so as to surround the placement portion, and forming a recess having the placement portion as a bottom surface by an inner surface A base comprising:
A lead terminal mounting pad formed on the outer surface of the side wall,
An external lead terminal mounted on the lead terminal mounting pad;
One end formed in the vicinity of the mounting portion on the surface of the concave portion, and the other end formed on the outer surface of the side wall portion at a position away from the lead terminal mounting pad in the vertical direction. An internal wiring continuously formed from the one end to the other end through the inside of the side wall,
A semiconductor device package comprising: a connecting conductor portion that forms the same surface as the outer surface of the side wall portion and electrically connects the other end of the internal wiring and the lead terminal mounting pad. A package for a semiconductor device according to claim 1 or 2,
The base is a semiconductor device package formed of a ceramic laminate. A method for manufacturing a package for a semiconductor device formed by a ceramic laminate provided with a first recess having a mounting portion on a bottom surface for mounting a semiconductor element,
(A) preparing a plurality of ceramic green sheets;
(B) forming a first hole in each of a part of the plurality of ceramic green sheets prepared in the step (a);
(C) forming a second hole smaller than the first hole together with the first hole in each of the other parts of the plurality of ceramic green sheets;
(D) A step of printing a predetermined wiring pattern on the surface of a part of the plurality of ceramic green sheets in which the holes are formed in the step (b) and the step (c), ) For the part of the green sheet in which the hole is formed in the step, the step of printing the first wiring portion having a size corresponding to the second hole, and the hole in the step (c) A step of printing a second wiring portion having an end portion reaching the second hole with respect to at least a portion of the other part of the ceramic green sheet formed of
(E) forming a first metallized layer on the inner wall surface of the second hole formed in the step (c);
(F) A green sheet on which the second wiring portion is overlapped on the first wiring portion to connect the first wiring portion and the first metallized layer, and on which the second wiring portion is printed. The plurality of ceramic green sheets are laminated in a predetermined order so that the surface of the green sheet is in contact with the green sheet in which the second hole part and the first wiring part are not formed. Forming a ceramic green sheet laminate including the first recess formed by overlapping and the internal wiring continuously formed as a whole including the wiring pattern formed in the step (d). In the process, the internal wiring has one end formed in the vicinity of the bottom surface of the first recess and the other end that is a connection portion between the second wiring portion and the first metallized layer. As the ceramic green Laminating the over door,
(G) The ceramic green sheet laminate is divided by cutting at a position passing through the second hole, has the first recess, and has the first metallized layer and the first at the cut surface. Forming a split laminated body having a second recess having one wiring part as a part of the surface;
(H) The cut surface of the divided laminate and the side surface of the continuously laminated ceramic green sheet including the ceramic green sheet on which the first wiring portion is formed. Forming a second metallized layer connected to the first wiring portion at a position adjacent to the stacking direction of the stacked body;
(I) A method for manufacturing a package for a semiconductor device, comprising the step of firing the divided laminate after the step (h). A method for manufacturing a package for a semiconductor device formed by a ceramic laminate provided with a recess having a mounting portion on the bottom surface for mounting a semiconductor element,
(A) preparing a plurality of ceramic green sheets;
(B) forming a first hole in each of a part of the plurality of ceramic green sheets prepared in the step (a);
(C) In each of the other part of the plurality of ceramic green sheets, a second hole smaller than the first hole is formed together with the first hole, and the second hole is formed in the second hole. Filling the conductive material with
(D) A step of printing a predetermined wiring pattern on the surface of a part of the plurality of ceramic green sheets in which the holes are formed in the step (b) and the step (c), ) For at least a part of the other ceramic green sheets having the hole formed in the step, a wiring part having an end reaching the second hole filled with the conductive material is provided. Printing process;
(E) laminating the plurality of ceramic green sheets in a predetermined order so that a surface of the ceramic green sheet on which the wiring portion is printed is in contact with a ceramic green sheet not provided with the second hole; A ceramic green sheet laminate comprising: the concave portion formed by overlapping one hole portion; and an internal wiring continuously formed as a whole including the wiring pattern formed in the step (d). In the forming step, the internal wiring has one end formed in the vicinity of the bottom surface of the concave portion and the other end that is a connection portion between the second hole portion filled with the conductive material. Laminating the ceramic green sheet on
(F) The ceramic green sheet laminate is divided by cutting at a position passing through the second hole filled with the conductive material, has the recess, and has the second hole on the cut surface. Forming a split laminate having a connection conductor portion made of the conductive material filled in the portion;
(G) a ceramic green sheet which is a cut surface of the divided laminated body and is in contact with the ceramic green sheet on which the wiring portion is formed, among ceramic green sheets which are in contact with the ceramic green sheet on which the connection conductor portion is formed Forming a metallized layer at a position overlapping a predetermined length in the stacking direction of the connection conductor portion and the split laminate on the side surface of the continuously stacked ceramic green sheets including different ceramic green sheets;
(H) A method for manufacturing a package for a semiconductor device, comprising the step of firing the divided laminate after the step (g).

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