JP2006047724A - Ion beam irradiation equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide ion beam irradiation equipment with which uniform alignment treatment is conducted in alignment treatment with ion beam irradiation. <P>SOLUTION: The ion beam irradiation equipment 10 includes: a transfer stage 18 which transfers a substrate 12 from the upstream side to the downstream side; an ion gun 20 which makes an ion beam IB irradiate a substrate 12 arranged on the transfer stage 18; masks 22, 24 which are arranged on the upstream side and on the downstream side; a blade 26 which is arranged on the downstream side mask 24 and can be elevated and inclined; and a slit 28 which is formed with the upstream side mask 22 and the blade 26 and makes the ion beam IB pass therethrough. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an ion beam irradiation apparatus for performing alignment treatment on a thin film to form an alignment film of a liquid crystal display.

  The liquid crystal display is provided with an alignment film in order to align the alignment of the liquid crystal. An alignment film is formed by irradiating an organic film such as polyimide or a thin film of an inorganic material such as DLC (Diamond Like Carbon) with an ion beam (see Patent Documents 1, 2, 3, and 4). This is because the thin film is subjected to orientation treatment by cutting the interatomic bond of the thin film with an ion beam. Unlike the so-called rubbing alignment process, the ion beam alignment process does not cause problems such as dust. Note that the ion beam in this specification includes cases called an atomic beam or an electron beam.

  The alignment treatment needs to be performed uniformly over the entire alignment film. If it is not uniform, it will cause uneven brightness and color of the liquid crystal display. In order to produce a high-quality liquid crystal display, a more uniform alignment treatment is required than before.

  A point source type or linear source type ion gun is used for the ion beam irradiation apparatus used for the alignment treatment. In order to perform the alignment treatment, there are a method of retaining the substrate with respect to the ion gun for a certain period of time and a method of transporting the substrate with respect to the ion gun at a certain speed.

  As a method for retaining the substrate for a certain period of time with respect to the ion gun, an ion beam irradiation apparatus 40 provided with a rotation mechanism 42 and the like as shown in FIG. 14 is used. A method of irradiating the substrate 12 with an ion beam (indicated by abbreviated IB in the drawing, the same applies in the present specification) from the ion gun 20 while changing the angle of the substrate 12 by placing the substrate 12 for a certain period of time. It is.

  The method for transporting the substrate to the ion gun is a method in which the substrate 12 is placed on the transport stage 18 as shown in FIG. 15 and the ion beam is applied to the substrate 12 by the ion gun 20 while transporting the substrate 12 at a certain speed. Hereinafter, for simplicity, description will be made using a method of transporting the substrate 12 to the ion gun 20.

  An ion beam irradiation apparatus 50 shown in FIG. 15 includes a transfer stage 18 on which a substrate 12 is placed and transferred, an ion gun 20 that emits an ion beam, and a slit 56 that allows only a straight ion beam to pass through a wide ion beam. And masks 52 and 54 formed. The substrate 12 is formed by laminating and patterning a desired material on an insulating substrate 14 such as glass, and forming a thin film 16 such as an organic film such as polyimide or an inorganic material such as DLC on the top layer. Has been.

  The thin film 16 is irradiated with the ion beam through the slit 56 while the substrate 12 arranged on the transfer stage 18 is being transferred. By irradiating the thin film 16 with the ion beam, the thin film 16 is subjected to an alignment treatment to become an alignment film.

  The alignment characteristics such as anchoring and pretilt of the liquid crystal are determined by ion beam conditions such as the incident angle and intensity of the ion beam with respect to the substrate 12, the irradiation time depending on the residence time of the substrate 12 and the transport speed. Since the ion beam has a certain spread, the excess ion beam is cut by the masks 52 and 54, and only the ion beam desired to contribute to the formation of the alignment film is irradiated to the thin film 16 (see Patent Document 1).

  When the ion beam intensity distribution in the transport direction shown in FIG. 15 is not uniform, the alignment process becomes non-uniform, and the non-uniform alignment of the liquid crystal may occur.

  The transfer stage 18 and the wall surface of the ion beam irradiation apparatus 50 are sputtered by the ion beam. Further, as shown by the dotted line in FIG. 15, the thin film 16 sputtered by the ion beam, the transfer stage 18, and an object used in the apparatus portion around the masks 52 and 54 are placed on the lower surface near the end of the mask 54. Adhere to. The object 60 attached in this way is called a sputtered object or an attached object. There is a feature that the sputtered material 60 tends to adhere to the vicinity of the end portion of the downstream mask 54 that forms the slit 56 from the direction of the ion beam. The starting point side of the substrate 12 to be transported is the upstream side, and the arrival point side is the downstream side.

  As shown in FIG. 16, when the sputtered material 60 comes near the end of the downstream mask 54, the ion beam is blocked or refracted by the sputtered material 60. The configuration of the slit 56 as shown in FIG. 15 is easily affected by the reflected ion beam.

  When the ion beam is blocked or refracted, the alignment of the liquid crystal 70 is not aligned as shown in FIG. When the alignment treatment is performed on the array substrate 12a and the color filter substrate 12c as shown in FIGS. 17B and 17C, when the substrates 12a and 12c are opposed to each other as shown in FIG. Therefore, twisting of liquid crystal molecules and deviation from the polarization axis are likely to occur. Such twisting of the liquid crystal molecules and deviation from the polarization axis cause display defects such as vertical stripes (vertical stripe unevenness) in the display of the liquid crystal display.

  The higher the beam energy of the ion beam, the higher the rate of sputtering the materials used in the thin film 16, the transfer stage 18, and the device portions around the masks 52 and 54. The possibility that the sputtered material 60 adheres to the vicinity of the end of the mask 54 is increased. Therefore, the change of the ion beam as described above occurs, and the defect due to the alignment process is likely to occur.

Japanese Patent Laid-Open No. 7-56172 (FIG. 1) Japanese Patent Laid-Open No. 10-253962 (FIG. 1) JP 2004-62098 A (FIG. 1) Japanese Patent Laying-Open No. 2004-37875 (FIG. 1)

  An object of the present invention is to provide an ion beam irradiation apparatus capable of uniform alignment processing when performing alignment processing by ion beam irradiation.

  The gist of the ion beam irradiation apparatus of the present invention is that a substrate is arranged, a conveyance stage that conveys the substrate from the upstream side to the downstream side, and the ion beam is arranged on the conveyance stage. An ion gun for irradiating the substrate, and between the ion gun and the transfer stage, disposed on the upstream side and the downstream side, provided with an end portion of the mask and an end portion of the downstream side mask, and the downstream side is inclined upward And a blade having an end, and a slit formed by the end of the upstream mask and the end of the blade and allowing the ion beam to pass therethrough.

  The end of the upstream mask has an inclined surface, and the angle of the inclined surface with respect to the substrate is larger than the incident angle of the ion beam to the substrate.

  The total of the angle of the blade with respect to the substrate and the reflection angle of the ion beam reflected by the substrate in the state where the blade is inclined upward is 90 degrees or less.

  The edge of the blade has an inclined surface, and the angle of the inclined surface of the blade with respect to the substrate is larger than the reflection angle of the ion beam reflected by the substrate in a state where the blade is inclined upward.

  The distance between the substrate or blade and the mask is 10 mm or less.

  At least the surface of the blade is carbon.

  In the ion beam irradiation apparatus of the present invention, the substrate is not irradiated with the ion beam reflected by the blade due to the inclination of the blade forming the slit and the shape of the end. The ion beam reflected by the blade is not irradiated onto the substrate, and the ion beam can be uniformly irradiated. For this reason, alignment processing can be performed uniformly and the alignment of liquid crystal can be made uniform. That is, a liquid crystal display with high display quality can be manufactured.

  Even with the inclination of the inclined surface provided at the end of the mask or blade, the ion beam can be directly applied to the substrate, and uniform alignment processing can be performed.

  Furthermore, the ion beam irradiation apparatus of the present invention can prevent irradiation of the lower surface of the blade with the ion beam reflected by the substrate by changing the inclination of the blade. Further, the alignment film of the substrate, the transfer stage, the mask and the device around the blade are sputtered by the ion beam, and the material can reduce the adhesion of the sputtered material on the lower surface of the blade. Since the frequency of cleaning in the apparatus is reduced, the tact time is not deteriorated. Since the alignment process is performed with a clean apparatus, it is possible to reduce vertical stripe unevenness and alignment failure of the liquid crystal display panel.

  Next, an embodiment of the ion beam irradiation apparatus of the present invention will be described with reference to the drawings. The ion beam irradiation apparatus irradiates a substrate with an ion beam while transporting the substrate.

  The ion beam irradiation apparatus 10 in FIG. 1 is provided with a substrate 12, a transfer stage 18 that transfers the substrate 12 from the upstream side to the downstream side, and a transfer stage 18. The ion beam is set on the transfer stage 18. The ion gun 20 that irradiates the substrate 12, the masks 22 and 24 that are disposed on the upstream side and the downstream side between the ion gun 20 and the transfer stage 18, and have end portions a and b, and the end portions of the downstream mask 24 b, the downstream side d can be inclined upward, and is formed by a blade 26 having an end c, an end a of the upstream mask 22 and an end c of the blade 26, and allows the ion beam to pass therethrough. And a slit 28.

  Since there are a plurality of ends, this specification defines as follows. An end a of the upstream mask 22 is defined as a first end. The end b of the downstream mask 24 is the second end. Let the edge part c of a braid | blade be a 3rd edge part.

  The substrate 12 includes an array substrate used for a liquid crystal display and a color filter substrate. The ion beam irradiation apparatus 10 is for forming an alignment film such as an array substrate. Therefore, the substrate 12 is formed by laminating and patterning a desired material on an insulating substrate 14 such as glass, and has an organic film such as polyimide or a thin film 16 of inorganic material such as DLC as an alignment film on the uppermost layer. In this specification, the description of irradiating the substrate 12 with an ion beam actually means irradiating the thin film 16 of an organic material such as polyimide or an inorganic material such as DLC on the substrate 12 with an ion beam.

  The transport stage 18 transports the substrate 12 at a constant speed in order to perform uniform alignment processing. That is, at each position of the substrate 12, the ion beam irradiation time is constant, and the amount of the irradiated ion beam is constant.

  In this specification, the upstream side refers to the starting point side of the substrate 12, and the downstream side refers to the arrival point side of the substrate 12. In FIG. 1, the left side is the upstream side and the right side is the downstream side.

  As the ion gun 20, a well-known one as shown in Patent Documents 3 and 4 may be used. For example, the ion gun 20 includes a plasma generation chamber, a gas introduction port for sending gas into the plasma generation chamber, an acceleration electrode for accelerating ions generated in the plasma generation chamber, and ions for extracting the accelerated ions to the outside as an ion beam. And a grid including an injection port. The ion gun 20 is preferably a linear source type. Ar gas or the like is used as the gas. In order to emit an ion beam, the ion beam irradiation apparatus 10 arranges the masks 22 and 24, the transfer stage 18 and the like in a vacuum chamber.

  The ion beam emitted from the ion gun 20 travels from the upper upstream side to the lower downstream side, that is, obliquely with respect to the substrate 12. The ion beam is a collection of a plurality of ions that are accelerated and go straight. Since each ion goes straight in an arbitrary direction, the ion beam has a certain spread. In the present specification, individual ions emitted from the ion gun 20 are also collectively referred to as an ion beam.

  Unnecessary ion beams are cut by the masks 22 and 24, and the substrate 12 is irradiated with only desired ion beams having straightness. In the present invention, a blade 26 is provided in addition to the masks 22, 24, and unnecessary ion beams are cut by the blade 26. The masks 22 and 24 may be integrated with the upstream and downstream masks 22 and 24 as in the mask 23 of FIG.

  Compared to the conventional case, a blade 26 is provided at the second end b of the downstream mask 24. The blade 26 rises on the downstream side d and is inclined with respect to the substrate 12. By tilting the blade 26, the ion beam reflected by the substrate 12 or the like is prevented from hitting the blade 26 again. Further, the substrate 12 is prevented from being irradiated with the ion beam that has hit the upper surface of the blade 26. The angle of the blade 26 with respect to the substrate 12 will be described later.

  The ion beam irradiation apparatus 10 includes means for inclining the blade 26. This means may be provided with means for adjusting the width of the slit 28. That is, the ion beam irradiation apparatus 10 may adjust the width of the slit 28 while the blade 26 is inclined. The angle of the blade 26 can be adjusted as required.

  The upstream mask 22 and the blade 26 have inclined surfaces at the first end a and the third end c, respectively. As a result of various studies on the optimum irradiation of the ion beam onto the substrate 12 and the prevention of sputtering by the ion beam onto the mask 22 and the like, the angles of the inclined surfaces are as follows.

  As shown in FIG. 3A, the angle θb of the inclined surface 23 of the upstream mask 22 with respect to the substrate 12 is preferably larger than the incident angle θi of the ion beam to the substrate 12. When the angle θi ≦ the angle θb, the ion beam can be directly irradiated onto the substrate 12 without the ion beam hitting the inclined surface 23. Therefore, the irradiation of the ion beam onto the substrate 12 can be made uniform, and a uniform alignment process can be performed.

  However, as shown in FIG. 3B, when the angle θi> the angle θb, the ion beam strikes the inclined surface 23. The ion beam is irradiated onto the substrate 12 at an unplanned angle. In each part of the substrate 12, the direction of the irradiated ion beam is not uniform, and the alignment process becomes non-uniform.

  Next, the shape of the blade 26 and the state when it is inclined will be described with reference to FIGS.

  For example, as shown in FIG. 4A, it is assumed that the inclined surface 27 of the end portion c of the blade 26 faces the side opposite to the substrate 12. As shown in FIG. 4B, when the angle θf + the angle θi> 90 deg, the ion beam reflected by the inclined surface 27 of the blade 26 is irradiated onto the substrate 12. The ion beam is irradiated onto the substrate 12 from a direction other than a predetermined direction, and the alignment process becomes non-uniform.

  As shown in FIG. 4C, if the total (angle θf + angle θi) of the angle θf of the inclined surface 27 of the blade 26 with respect to the substrate 12 and the incident angle θi of the ion beam with respect to the substrate 12 is 90 deg or less, the inclined surface The ion beam reflected by 27 is not irradiated on the substrate 12. Only the desired ion beam can be irradiated to the substrate 12, and the alignment treatment can be made uniform.

  The orientation characteristics are shown in FIG. The thin film 16 uses DLC. 1 in FIG. 5 is the state of FIG. 4C, and 2 in FIG. 5 is the state of FIG. 4B. It can be seen that the blade 26 affects the orientation characteristics. The alignment film retardation Δnd (refractive index anisotropy Δn = ny−nx (ny, nx is the refractive index of the anisotropic medium) multiplied by the thickness d of the anisotropic medium in the film (FIG. 6 ( It can be seen that the smaller the a) and (b))), the smaller the anisotropy of the alignment film surface, and the substrate 12 is irradiated with the ion beam 1 better than 2 in FIG. 5 in FIG. 5 is affected by the reflection of the ion beam on the inclined surface 27 of the blade 26, and the ion beam having a large angle is incident on the substrate 12 as a result, so that the pretilt angle is large. Since 1 in FIG. 5 does not exist, the pretilt angle caused by the original ion beam appears.

  The inclination of the blade 26 that avoids the influence of the ion beam reflected by the substrate 12 will be described. As shown in FIG. 7A, the ion beam is reflected at the same angle as the incident angle θi. If the angle θbm of the blade 26 is equal to or larger than the reflection angle θi of the ion beam to the substrate 12, the ion beam will not hit the lower surface (surface on the substrate side) of the blade 26. The ion beam passes through a gap formed between the blade 27 and the downstream mask 24. Therefore, unnecessary ion beams are not irradiated onto the substrate 12, and the alignment process can be made uniform.

  On the other hand, as shown in FIG. 7B, if the angle θbm <the angle θi, the ion beam reflected by the substrate 12 hits the lower surface of the blade 26. The ion beam is reflected by the lower surface of the blade 26, and the substrate 12 is re-irradiated with an unnecessary ion beam. A uniform alignment process cannot be applied to the substrate 12.

  When the description of the blade 26 is summarized, it is preferable to adopt the following forms (A) and (B), and the shape is as shown in FIG. The inclined surface 27 of the third end c of the blade 26 faces the side where the substrate 12 is present. The angle θf of the inclined surface 27 described above is the angle of the blade 26. The angle θbm of the blade 26 described above is the angle of the inclined surface 27.

  (A) In a state where the blade 26 is inclined upward, the sum (angle θf + angle θi) of the angle θf of the blade 26 with respect to the substrate 12 and the reflection angle θi of the ion beam reflected by the substrate 12 is preferably 90 degrees or less. . If it is 90 degrees, the ion beam is reflected toward the ion gun 20.

  (B) In a state where the blade 26 is inclined upward, the angle θbm of the inclined surface 27 of the blade 26 with respect to the substrate 12 is preferably larger than the reflection angle θi of the ion beam reflected by the substrate 12.

  By satisfying (A) and (B) above, the substrate 26 can be irradiated with a desired ion beam without being affected by the blade 26. By providing the blade 26 of the present invention, unlike the prior art, it is possible to prevent disturbance of the ion beam by the mask 24 on the downstream side, reflection to the lower surface of the mask 24, spattering, and adhesion prevention.

Next, the space between the upstream mask 22 and the blade 26 (width of the slit 28) will be described. Each symbol in FIG. 9 is defined as follows.
a: Ion gun aperture width (ion beam width when ion beam is launched)
b: Effective ion beam width at irradiation distance c: Effective ion beam width at substrate surface d: Irradiation distance (distance between ion gun and substrate)
E: intersection of ion beam center and substrate θd: divergence angle of ion beam θi: incident angle of ion beam

  When b is calculated, b = a + 2 × d × tan (θd). When the spread of the ion beam is small, c≈b / sin (θi). Therefore, c≈ (a + 2d × tan (θd)) / sin (θi).

  The distance L between the upstream mask 22 and the blade 26 is L = c × (1−R) = (a + 2d × tan (θd)) / sin (θi) × (1−R). R is the ion beam cut rate with respect to c. The cutting rate R is defined as 0.3 ≦ R ≦ 0.8. However, it is assumed that the cut rate R by at least the downstream mask 24 (or blade 26) includes 0.1 or more.

θd is obtained by the following (1) to (5).
(1) Place the Faraday cup at 300 mm from the irradiation surface of the ion gun and move it left and right.
(2) The current density obtained with the Faraday cup is plotted as shown in FIG.
(3) The plotted value is approximated by a normal distribution curve.
(4) A cut line is drawn parallel to the Faraday cup position at a current density position where the area under the normal distribution curve is 95%.
(5) The angle connecting the intersection A between the cut line and the normal distribution curve and the opening end of the ion gun is defined as θd.

As an example of the distance L between the upstream mask 22 and the blade 26, the orientation characteristics are as shown in FIG. The thin film 16 uses DLC. At this time, the distance M between the substrate 12 and the mask 22 is 6 mm, and the angle θbm = 0 deg.
a: 30 mm
b: 134 mm
c: 317 mm
d: 369 mm
θd: 8 °
θi: 25 °
0.3 ≦ R ≦ 0.8 (at least the downstream cut rate R includes 0.1 or more)

  From FIG. 11B, an appropriate cut rate R can be estimated from the distance L and the orientation characteristics. The distance L between the mask 22 and the blade 26 is about 60 to 220 mm.

  The distance between the substrate 12 and the mask 22 (including the end portion c of the inclined blade 26) is preferably 10 mm or less. This is because, as shown in FIG. 12, the alignment force increases as the interval decreases. Moreover, since the blade 26 and the board | substrate 12 will collide when a space | interval is too narrow, a space | interval of 1-10 mm is preferable. In FIG. 12, the distance M between the substrate 12 and the blade 26 is 6 mm, the angle of the blade 26 is 0 degree, and the thin film 16 is DLC.

  From various experiments, it is preferable to chamfer the tip portion of the blade 26 as shown in FIGS. 13 (a) and 13 (b). FIG. 13A is a chamfer rounded into an arc shape, and the radius r of the arc is preferably 1 mm or less. In FIG. 13B, the cut is made by a straight line connecting places where the distance from the apex of the tip is equal. The distance x from the tip is preferably 1 mm or less. Experiments have shown that the orientation treatment can be made uniform by setting the radius r or the distance x to 1 mm or less (see FIG. 11).

The material of the blade 26 is a material with a low sputtering rate (carbon, metal, etc.). This is because a material with a low sputtering rate is difficult to be sputtered. When Ar ⁺ is accelerated at 500 eV to form an ion beam, the sputtering rate of carbon is 0.12 atoms / ion, and 0.12 C atoms are sputtered for one Ar ⁺ ion. Sputtering becomes difficult as the numerical value of the sputtering rate is smaller. The sputtering rate of carbon is about 1/5 even when compared with Si and Ti having a relatively low sputtering rate. The blade 26 is not easily sputtered, and the number of cleanings per unit time can be reduced. Further, since the sputtered material does not easily adhere to the blade 26, it is possible to prevent the vertical stripe unevenness and the alignment failure described in the prior art.

  In addition to the entire blade 26 made of carbon, carbon may be adhered to at least the surface of the blade 26 with an adhesive, and the inside may be made of another material.

  It is preferable to use carbon for the mask 22 other than the blade 26 and the inner wall 30 of the apparatus. As in the transfer stage 18 in FIG. 1, the carbon coat 32 may be attached only to the surface irradiated with the ion beam. The number of cleanings for the entire apparatus 10 can be reduced, which is preferable in terms of production efficiency. Further, the spatter attached to the mask 22 or the like becomes large, and the probability of dropping on the substrate is also reduced.

  In FIG. 1, since the substrate 12 is transported from the left to the right, the blade 26 is provided on the downstream mask 24, but the blade 26 may be provided on the upstream mask 22. The conveyance direction may be from right to left in FIG. A blade 26 may be provided on both masks 22 and 24.

  As described above, the present invention can uniformly irradiate the substrate with the ion beam and can perform uniform alignment treatment. When a substrate is used for a liquid crystal display, the alignment of the liquid crystal becomes uniform, and the display quality of the liquid crystal display can be improved. The number of times of cleaning of the ion beam irradiation apparatus is reduced, and the tact time can be shortened.

  In addition, the present invention can be carried out in a mode in which various improvements, modifications, and changes are added based on the knowledge of those skilled in the art without departing from the spirit of the present invention.

It is a figure which shows the structure of the ion beam irradiation apparatus of this invention. It is a figure which shows the other structure of a mask. It is a figure which shows the inclined surface of an upstream mask, (a) shows an optimal inclined surface, (b) shows the structure by which an ion beam is irradiated to an inclined surface. It is a figure which shows the inclined surface of a braid | blade, (a) is a whole figure including the mask of an upstream side, (b) is a figure which an ion beam heads to a substrate direction by reflection in an inclined surface, ( c) is a diagram in which the ion beam reflected by the inclined surface is directed upward. It is a figure which shows the orientation characteristic in FIG.4 (b), (c). It is a figure explaining the optical anisotropy of the alignment film surface, ie, retardation, (a) of the alignment layer (anisotropic medium) which can be made into a thin film on the upper surface of the substrate by ion beam irradiation and the film in which the ion beam did not enter It is a conceptual diagram showing the cross section of the non-oriented layer (isotropic medium) which is deep, (b) is the refractive index (nx, ny) of the oriented layer (anisotropic medium) and the anisotropy (Δn) of the refractive index. It is a conceptual diagram expressing). It is a figure which shows the inclination of a blade, (a) is a figure where the ion beam reflected by the board | substrate is not irradiated to the back surface of a blade, (c) is a figure where an ion beam is irradiated to the back surface of a blade. It is a figure which shows the inclined surface and inclination of an optimal blade from FIG.4 and FIG.7. It is a figure for defining the optimal slit width. It is a figure for defining the breadth of an ion beam. From the definitions of FIGS. 9 and 10, (a) shows the orientation characteristics, and (b) shows the cut rate. It is a figure which shows the orientation characteristic calculated | required from the distance of a mask and a board | substrate. It is a figure which shows the chamfering of the front-end | tip of a braid | blade, (a) is a rounded figure, (b) is a cut figure. It is a figure which shows the structure of the conventional ion beam irradiation apparatus. It is the figure which the sputter | spatter adhered to the back surface of the mask. It is the figure which the sputter | spatter adhered to the part which forms the slit of a mask. It is a figure which shows disorder of orientation, (a) shows the relationship between an ion beam and orientation, (b) shows the direction of the ion beam on the array substrate side, (c) shows the direction of the ion beam on the color filter substrate side. (D) shows the direction of the ion beam when the liquid crystal cell is formed.

Explanation of symbols

10: Ion beam irradiation device 12: Substrate 14: Insulating substrate 16: Thin film 20: Ion gun 22, 24: Mask 26: Blade 28: Slit

Claims (6)

A transport stage for disposing the substrate and transporting the substrate from the upstream side to the downstream side;
An ion gun installed above the transfer stage and irradiating a substrate disposed on the transfer stage with an ion beam;
An upstream mask disposed on the upstream side and having a first end between the ion gun and the transfer stage;
A downstream mask disposed on the downstream side and having a second end between the ion gun and the transfer stage;
A slit provided on the second end, capable of ascending and descending on the downstream side, has a third end, and allows the ion beam to pass through the third end and the first end. Blade,
An ion beam irradiation apparatus including: The ion beam irradiation apparatus according to claim 1, wherein the first end of the upstream mask has an inclined surface, and an angle of the inclined surface with respect to the substrate is larger than an incident angle of the ion beam to the substrate. 3. The ion beam irradiation apparatus according to claim 1, wherein a total of an angle of the blade with respect to the substrate and a reflection angle of the ion beam reflected by the substrate is 90 degrees or less in a state where the blade is inclined upward. The third end of the blade has an inclined surface, and the angle of the inclined surface of the blade with respect to the substrate is larger than the reflection angle of the ion beam reflected by the substrate when the blade is inclined upward. The ion beam irradiation apparatus according to claim 1. The ion beam irradiation apparatus according to claim 1, wherein a distance between the substrate or blade and the mask is 10 mm or less. The ion beam irradiation apparatus according to claim 1, wherein at least a surface of the blade is carbon.

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