JP2006041265A5 - - Google Patents

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Publication number
JP2006041265A5
JP2006041265A5 JP2004220500A JP2004220500A JP2006041265A5 JP 2006041265 A5 JP2006041265 A5 JP 2006041265A5 JP 2004220500 A JP2004220500 A JP 2004220500A JP 2004220500 A JP2004220500 A JP 2004220500A JP 2006041265 A5 JP2006041265 A5 JP 2006041265A5
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JP
Japan
Prior art keywords
gate electrode
layer gate
disposed
layer
concentration impurity
Prior art date
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Granted
Application number
JP2004220500A
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English (en)
Japanese (ja)
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JP2006041265A (ja
JP4628032B2 (ja
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Priority to JP2004220500A priority Critical patent/JP4628032B2/ja
Priority claimed from JP2004220500A external-priority patent/JP4628032B2/ja
Publication of JP2006041265A publication Critical patent/JP2006041265A/ja
Publication of JP2006041265A5 publication Critical patent/JP2006041265A5/ja
Application granted granted Critical
Publication of JP4628032B2 publication Critical patent/JP4628032B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004220500A 2004-07-28 2004-07-28 半導体装置及びその作製方法 Expired - Fee Related JP4628032B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004220500A JP4628032B2 (ja) 2004-07-28 2004-07-28 半導体装置及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004220500A JP4628032B2 (ja) 2004-07-28 2004-07-28 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2006041265A JP2006041265A (ja) 2006-02-09
JP2006041265A5 true JP2006041265A5 (cg-RX-API-DMAC10.html) 2007-08-23
JP4628032B2 JP4628032B2 (ja) 2011-02-09

Family

ID=35905926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004220500A Expired - Fee Related JP4628032B2 (ja) 2004-07-28 2004-07-28 半導体装置及びその作製方法

Country Status (1)

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JP (1) JP4628032B2 (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8629490B2 (en) 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
US7932183B2 (en) 2006-11-14 2011-04-26 Mitsubishi Electric Corporation Method of manufacturing multilayer thin film pattern and display device
JP5500771B2 (ja) 2006-12-05 2014-05-21 株式会社半導体エネルギー研究所 半導体装置及びマイクロプロセッサ
US7994000B2 (en) 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5179219B2 (ja) * 2008-02-20 2013-04-10 東京エレクトロン株式会社 付着物除去方法及び基板処理方法
KR101813492B1 (ko) * 2011-01-05 2018-01-02 삼성디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
JP6027551B2 (ja) * 2012-02-01 2016-11-16 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
CN106024633A (zh) * 2016-06-23 2016-10-12 京东方科技集团股份有限公司 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3648808B2 (ja) * 1995-10-18 2005-05-18 セイコーエプソン株式会社 薄膜半導体装置およびその製造方法
JP2001308337A (ja) * 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd 低温ポリシリコンｔｆｔの製造方法
US6780694B2 (en) * 2003-01-08 2004-08-24 International Business Machines Corporation MOS transistor

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