JP2006024817A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2006024817A
JP2006024817A JP2004202764A JP2004202764A JP2006024817A JP 2006024817 A JP2006024817 A JP 2006024817A JP 2004202764 A JP2004202764 A JP 2004202764A JP 2004202764 A JP2004202764 A JP 2004202764A JP 2006024817 A JP2006024817 A JP 2006024817A
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Japan
Prior art keywords
semiconductor device
integrated circuit
film
reflective layer
semiconductor integrated
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Pending
Application number
JP2004202764A
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Japanese (ja)
Inventor
Tetsushi Otaki
哲史 大瀧
Original Assignee
Matsushita Electric Ind Co Ltd
松下電器産業株式会社
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Application filed by Matsushita Electric Ind Co Ltd, 松下電器産業株式会社 filed Critical Matsushita Electric Ind Co Ltd
Priority to JP2004202764A priority Critical patent/JP2006024817A/en
Publication of JP2006024817A publication Critical patent/JP2006024817A/en
Application status is Pending legal-status Critical

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which produces a gain easily and is capable of extending a communicative distance. <P>SOLUTION: The semiconductor device comprises a semiconductor integrated circuit board, and an antenna coil formed on the semiconductor integrated circuit board. The semiconductor device also includes a reflective layer which reflects electric waves, and an isolation layer which isolates the antenna coil electrically from the reflective layer. Both layers are formed between the integrated circuit board and the antenna coil. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device, and more particularly to a non-contact type semiconductor device that wirelessly receives power from a reader / writer and transmits / receives a signal between the reader / writer.

  A semiconductor device on which a semiconductor integrated circuit (IC) is mounted has a wide range of applications in fields such as transportation, distribution, and information communication because it has abundant applicability and high security performance. In particular, a non-contact type semiconductor device called an IC tag developed in recent years does not have an external terminal and wirelessly receives power from the reader / writer and transmits / receives signals to / from the reader / writer. For this reason, unlike a contact-type semiconductor device, there is essentially no damage to the external terminal, and it is expected that it will spread to a wider range of fields in the future as a device that can withstand long-term use.

Conventionally, as this type of non-contact type semiconductor device, an antenna coil 3 composed of a winding coil, a printed coil or the like is externally attached to an input / output terminal of a semiconductor integrated circuit chip (IC chip) 1 shown in FIG. Such a semiconductor module is generally used.
However, the semiconductor module with the antenna coil externally attached is prone to problems such as disconnection and poor contact due to stress easily acting on the connection between the IC chip and the antenna coil, and the yield rate (manufacturing yield) is low. There is a problem that the product cost becomes high.

  In order to solve the above problem, for example, as described in Patent Document 1, a semiconductor device using an IC chip with a built-in antenna coil is used instead of a configuration in which an antenna coil is externally attached to an input / output terminal of an IC chip. Proposed.

  As shown in the perspective view of FIG. 7 and the cross-sectional view of FIG. 8, the semiconductor device is formed of a metal on a silicon substrate 1 on which a semiconductor integrated circuit is formed via a first passivation film 2 made of a silicon nitride film or the like. An antenna coil 3 having a layer pattern is formed, and a second passivation film 4 composed of a two-layer structure film of a silicon oxide film and a silicon nitride film is further formed on the surface of the antenna coil 3. .

Japanese Patent Laid-Open No. 10-324423

  However, in the semiconductor device with a built-in non-contact type antenna coil, the antenna area is limited to the chip size and the structure is limited as compared with the external type, so that it is difficult to obtain a gain and the communicable distance is short. There was a problem of becoming.

  The present invention has been made in view of the above-described circumstances, and has an object to provide a semiconductor device that solves the problems of the above-described conventional semiconductor device, can easily obtain a gain, and can increase a communicable distance. To do.

In order to achieve the above object, the present invention provides a semiconductor device comprising a semiconductor integrated circuit substrate and an antenna coil formed on the semiconductor integrated circuit substrate, wherein the semiconductor integrated circuit substrate is interposed between the semiconductor integrated circuit substrate and the antenna coil. And a reflection layer for reflecting radio waves, and a separation layer for electrically insulating and separating the antenna coil and the reflection layer.
With this configuration, the reflective layer reflects the received radio wave and has a function of improving the gain of the antenna coil, and also has a function of preventing moisture and contamination from entering, and protecting the semiconductor integrated circuit from mechanical damage. Have Furthermore, since the antenna gain is improved, the communicable distance with the reader / writer can be extended.

In the semiconductor device of the present invention, the reflective layer is configured to realize reception of electric power from a reader / writer and reflection of radio waves for transmitting and receiving signals between the reader / writer and the semiconductor integrated circuit. Including a metal film.
According to this configuration, a semiconductor device including a reflective layer that has both a function of reflecting a radio wave and a function as a wiring material is obtained using the reflection characteristics of the surface of the metal film and the conductivity of the metal film. be able to.

In the semiconductor device of the present invention, the reflective layer includes a protective function for protecting the semiconductor integrated circuit.
According to this configuration, the reliability of the semiconductor integrated circuit can be improved by using a dense and highly moisture-resistant material as the reflective layer so as to have the protection function of the semiconductor integrated circuit. In particular, since the semiconductor integrated circuit is covered with a reflective layer made of a metal film, a sufficient moisture resistance can be secured even if the passivation film is only a coating film such as a polyimide film. Therefore, this configuration can realize a reduction in thickness and cost of the semiconductor device.

In the semiconductor device of the invention, the reflective layer includes a protective function that protects the semiconductor integrated circuit from thermal destruction.
With this configuration, the temperature increase of the semiconductor integrated circuit can be prevented by the presence of the reflective layer. Here, if the reflective layer is made of a metal material with good thermal conductivity such as gold, copper, etc. so as to have sufficient heat dissipation, the reflective layer has a large area, so the heat dissipation effect is high, and the semiconductor integration The temperature rise of the circuit can be prevented satisfactorily.
In addition, when a heat conductive material is arranged on the back side of the semiconductor integrated circuit and heat dissipation from the back side can be promoted, a material having low heat conductivity should be used for the reflective layer located on the front side. It may be. For example, a stacked structure of a film having low thermal conductivity such as tin, thallium, or antimony and a film having high conductivity (low specific resistance) may be used. Further, a resin film or the like may be interposed between the reflective layer and the semiconductor integrated circuit so as to achieve thermal relaxation. In this case, there is also an effect that the antenna characteristics with high accuracy can be maintained without changing the temperature characteristics of the antenna by heat from the semiconductor integrated circuit.

The semiconductor device of the present invention includes one in which the reflective layer is a single layer film.
With this configuration, the semiconductor device can be thinned.

In the semiconductor device of the present invention, the reflective layer includes a composite film.
With this configuration, when the reflective layer is configured, a composite film is configured by laminating films having one or more functions such as a heat dissipation layer, a protective layer, a conductive layer, and a reflective layer. By taking advantage of the characteristics of the film constituent material, an excellent reflective layer can be formed.

The semiconductor device of the present invention includes one in which the separation layer is a single layer film.
With this configuration, the semiconductor device can be thinned.

The semiconductor device of the present invention includes a semiconductor device in which the separation layer is a composite film.
With this configuration, in addition to the insulating function, the separation layer can have a heat radiation function and a protection function. For example, by using a composite film of a silicon oxide film and a silicon nitride film, an isolation layer having a protective function in addition to an insulating function can be obtained.

  As described in detail above, the semiconductor device of the present invention improves the gain of the antenna by reflecting radio waves at the reflective layer by forming a reflective layer and a separation layer between the semiconductor integrated circuit substrate and the antenna coil. It is possible to improve the communicable distance of the semiconductor integrated circuit.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is a sectional view showing a configuration of an embodiment of a semiconductor device according to the present invention.

  The semiconductor device 100 of the present invention includes an IC tag covered with a silicon nitride film as the first passivation film 2 as shown in FIG. 2 and FIG. 3 along the AA ′ and BB ′ sections of FIG. A copper thin film pattern is formed on a semiconductor integrated circuit (IC) substrate (chip) 1 that constitutes a substrate, via a gold thin film as a reflective layer 5 and a two-layer film of a silicon oxide film and silicon nitride as a separation layer 6 The antenna coil 3 comprised by this is formed. On the surface of the antenna coil 3, a second passivation film 4 made of a two-layer structure film of a silicon oxide film and a silicon nitride film is further formed. Here, the second passivation film is omitted in FIG.

  That is, the semiconductor integrated circuit chip 1 constituting this semiconductor device has a passivation film 2 made of a silicon nitride film and a silicon oxide film on a silicon substrate on which a semiconductor integrated circuit comprising an IC tag including a memory region is formed. Is formed.

The reflective layer is composed of a gold thin film.
The separation layer is composed of a silicon nitride film and a silicon oxide film.

In manufacturing, a semiconductor integrated circuit is formed using a normal semiconductor process.
Then, after forming a passivation film 2 composed of a silicon nitride film and a silicon oxide film by a low pressure CVD method, a gold thin film is formed as a reflective layer in the same chamber. Then, the reflective layer 5 and the passivation film 2 are patterned using a mask formed by photolithography to form a through hole H. At this time, by using a metal mask, a portion of the gold thin film that forms a contact with the semiconductor integrated circuit may not be formed.

  Thereafter, a silicon nitride film and a silicon oxide film are formed as the separation layer 6 again by the low pressure CVD method. Thereafter, the separation layer 6 in a region where a contact is to be formed is removed by photolithography. At this time, although the separation layer 6 is formed on the inner wall of the through hole and on the surface of the semiconductor integrated circuit substrate 1, the semiconductor integrated circuit substrate 1 is exposed in the through hole H by lightly etching by anisotropic etching. Also good.

  Finally, a copper plating layer is formed on a thin film by sputtering such as gold, this is patterned by photolithography, and this upper layer is covered with the second passivation film 4. This configuration may be replaced with a step of attaching a copper foil and forming a pattern of the antenna coil 3 by photolithography.

In this way, a semiconductor device in which the antenna coil 3 is integrated on the silicon substrate can be obtained.
The contact for connecting the antenna coil and the semiconductor integrated circuit is formed as shown in FIG. 3, but the semiconductor integrated circuit substrate 1 and the reflective layer 5 are electrically connected in a cross section (not shown). .
With this configuration, when receiving a radio wave from the reader / writer via the antenna coil 3, the reflection layer 5 reflects the radio wave leaked from the antenna coil 3 by the reflective layer 5, and the antenna coil 3 receives the reflected radio wave. The operation of driving the semiconductor integrated circuit by the sum of these signals and transmitting the output to the reader / writer via the antenna coil 3 becomes possible using a very fine semiconductor device.

  In consideration of the manufacturing efficiency, as shown in FIG. 4, after the patterning of the antenna coil 3 is performed at the semiconductor wafer level, and a second passivation film (not shown) is formed as necessary, a dicing line is formed. You may make it divide | segment by DC. Further, a second passivation film may be formed on the entire surface of the semiconductor device after dicing.

The separation layer 6 is composed of a two-layer film of a silicon oxide film and a silicon nitride film. However, the separation layer 6 is appropriately selected so as to have electrical insulation, a passivation function, and a performance for reducing parasitic capacitance. In addition to the silicon oxide film and the silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or a composite film made of a combination thereof may be used.
Further, when the reflective layer is composed of a gold layer, the separation layer is composed of a two-layer structure film of a silicon oxide film and a silicon nitride film, or is composed of a highly passivating material, a semiconductor integrated circuit As the first passivation film 2 that covers the substrate surface, a resin film such as a polyimide film may be used.

(Embodiment 2)
Although the IC tag has been described in the first embodiment, the present invention can also be applied to an IC card as shown in FIG.
In this case, the semiconductor integrated circuit board is mounted on the resin substrate 11 and the antenna coil 3 is formed on the entire surface of the resin substrate except for the first embodiment. The semiconductor integrated circuit substrate 1 has a cross-sectional structure substantially similar to the cross section shown, and is mounted in a recess formed on a resin substrate 11, and the semiconductor integrated circuit substrate 1 on which the first passivation film 2 is formed. As shown in FIG. 3 above, the reflective layer 5 and the separation layer 6 are formed so as to cover the semiconductor integrated circuit substrate 1, and the antenna coil 3 extending on the resin substrate surface is further formed on the upper layer, It is assumed that the IC card 200 is configured. Although omitted in FIG. 5, the entire surface of the IC card 200 is covered with a laminate film.
According to this configuration, the area occupied by the antenna with respect to the semiconductor integrated circuit is larger than that of the IC tag of the first embodiment, and the reflective layer can be made larger by that, so that the antenna gain can be further improved. .

  According to the IC card of the second embodiment, due to the presence of the reflective layer, the semiconductor integrated circuit protection, the radio wave reflection function, and the function as a wiring material are satisfactorily provided, and power is received from the reader / writer. An IC card capable of satisfactorily transmitting / receiving signals to / from the reader / writer can be formed.

  At the time of manufacture, a resin substrate 11 having a concave portion on which a semiconductor integrated circuit substrate is to be mounted is prepared, and the semiconductor integrated circuit substrate 1 is mounted on the resin substrate, and thereafter, the reflective layer is the same as in the first embodiment. The separation layer is formed, and the antenna coil is formed. The reflection layer 5, the separation layer 6, and the antenna coil 3 are extended to the entire resin substrate surface.

  As described above, the semiconductor device of the present invention is useful for all semiconductor devices that perform power feeding and communication using radio waves, such as IC tags and IC cards.

The perspective view which shows the semiconductor device of Embodiment 1 of this invention. Sectional drawing which shows the semiconductor device of Embodiment 1 of this invention Sectional drawing which shows the semiconductor device of Embodiment 1 of this invention Explanatory drawing which shows the manufacturing process of the semiconductor device of Embodiment 1 of this invention. The perspective view which shows the semiconductor device of Embodiment 2 of this invention. The perspective view which shows the semiconductor device of a prior art example The perspective view which shows the semiconductor device of a prior art example Sectional view showing a conventional semiconductor device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 IC chip 2 1st passivation film 3 Antenna coil 4 2nd passivation film 5 Reflective layer 6 Separation layer

Claims (8)

  1. In a semiconductor device comprising a semiconductor integrated circuit substrate on which a semiconductor integrated circuit is formed, and an antenna coil formed on the semiconductor integrated circuit substrate,
    A semiconductor device comprising: a reflective layer for reflecting radio waves; and a separation layer for electrically insulating and separating the antenna coil and the reflective layer between the semiconductor integrated circuit substrate and the antenna coil.
  2. The semiconductor device according to claim 1,
    The reflection layer is a metal film configured to realize reception of electric power from a reader / writer and reflection of radio waves for transmitting and receiving signals between the reader / writer and the semiconductor integrated circuit. A semiconductor device.
  3. The semiconductor device according to claim 1,
    The semiconductor device according to claim 1, wherein the reflective layer includes a protection function for protecting the semiconductor integrated circuit.
  4. The semiconductor device according to claim 1,
    The semiconductor device, wherein the reflective layer has a protection function for protecting the semiconductor integrated circuit from thermal destruction.
  5. The semiconductor device according to claim 1,
    The semiconductor device, wherein the reflective layer is a single layer film.
  6. The semiconductor device according to claim 1,
    The semiconductor device, wherein the reflective layer is a composite film.
  7. The semiconductor device according to claim 1,
    The semiconductor device, wherein the separation layer is a single layer film.
  8. The semiconductor device according to claim 1,
    The semiconductor device, wherein the separation layer is a composite film.
JP2004202764A 2004-07-09 2004-07-09 Semiconductor device Pending JP2006024817A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004202764A JP2006024817A (en) 2004-07-09 2004-07-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004202764A JP2006024817A (en) 2004-07-09 2004-07-09 Semiconductor device

Publications (1)

Publication Number Publication Date
JP2006024817A true JP2006024817A (en) 2006-01-26

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007213300A (en) * 2006-02-09 2007-08-23 Toppan Printing Co Ltd Rfid information recording medium
JP2007233655A (en) * 2006-02-28 2007-09-13 Sumikin Plant Ltd Method for managing steel shape using id tag
JP2007237659A (en) * 2006-03-10 2007-09-20 Seiko Epson Corp Semiconductor device, ink cartridge and electronic equipment
JP2008028691A (en) * 2006-07-21 2008-02-07 Seiko Epson Corp Antenna device
WO2009013817A1 (en) * 2007-07-25 2009-01-29 Fujitsu Limited Wireless tag
US7850295B2 (en) 2006-03-13 2010-12-14 Seiko Epson Corporation Semiconductor device, ink cartridge, and electronic device
US8704531B2 (en) 2008-03-28 2014-04-22 Nec Corporation Loop element and noise analyzer

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007213300A (en) * 2006-02-09 2007-08-23 Toppan Printing Co Ltd Rfid information recording medium
JP2007233655A (en) * 2006-02-28 2007-09-13 Sumikin Plant Ltd Method for managing steel shape using id tag
US7780281B2 (en) 2006-03-10 2010-08-24 Seiko Epson Corporation Semiconductor device, ink cartridge, and electronic device
JP2007237659A (en) * 2006-03-10 2007-09-20 Seiko Epson Corp Semiconductor device, ink cartridge and electronic equipment
US8465138B2 (en) 2006-03-10 2013-06-18 Seiko Epson Corporation Semiconductor device, ink cartridge, and electronic device
US8231197B2 (en) 2006-03-10 2012-07-31 Seiko Epson Corporation Semiconductor device, ink cartridge, and electronic device
JP4640221B2 (en) * 2006-03-10 2011-03-02 セイコーエプソン株式会社 Ink cartridge and printer
US8822239B2 (en) 2006-03-10 2014-09-02 Seiko Epson Corporation Manufacturing method for semiconductor device
US7850295B2 (en) 2006-03-13 2010-12-14 Seiko Epson Corporation Semiconductor device, ink cartridge, and electronic device
JP2008028691A (en) * 2006-07-21 2008-02-07 Seiko Epson Corp Antenna device
JP4661715B2 (en) * 2006-07-21 2011-03-30 セイコーエプソン株式会社 Antenna device
WO2009014213A1 (en) * 2007-07-25 2009-01-29 Fujitsu Limited Wireless tag and method for manufacturing the same
KR101070980B1 (en) * 2007-07-25 2011-10-06 후지쯔 가부시끼가이샤 Wireless tag and method for manufacturing the same
WO2009013817A1 (en) * 2007-07-25 2009-01-29 Fujitsu Limited Wireless tag
US8570173B2 (en) 2007-07-25 2013-10-29 Fujitsu Limited Radio frequency tag and method of manufacturing the same
US8704531B2 (en) 2008-03-28 2014-04-22 Nec Corporation Loop element and noise analyzer

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