US20100019372A1 - Semiconductor device package and method of fabricating the same - Google Patents
Semiconductor device package and method of fabricating the same Download PDFInfo
- Publication number
- US20100019372A1 US20100019372A1 US12/507,979 US50797909A US2010019372A1 US 20100019372 A1 US20100019372 A1 US 20100019372A1 US 50797909 A US50797909 A US 50797909A US 2010019372 A1 US2010019372 A1 US 2010019372A1
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- Prior art keywords
- semiconductor device
- device package
- die pad
- thickness
- lead pattern
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title description 4
- 230000005855 radiation Effects 0.000 claims abstract description 50
- 239000010410 layer Substances 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 239000010949 copper Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910001092 metal group alloy Inorganic materials 0.000 description 6
- 238000010295 mobile communication Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Definitions
- the present general inventive concept relates to semiconductor device packages and, more specifically, to exposed lead semiconductor device packages and methods of fabricating the same.
- a plurality of semiconductor chips are formed on a semiconductor wafer through various processes.
- the plurality of semiconductor chips are cut along scribe lines engraved on the semiconductor wafer to be divided into individual semiconductor chips.
- a package process is performed to mount the individual semiconductor chips on a system board to complete a semiconductor device package.
- Exposed lead packages ELPs
- An ELP includes a package body formed to expose bottom surfaces of leads and a die pad on which a semiconductor chip is mounted.
- the semiconductor device package may include a semiconductor chip, a die pad, a lead pattern, and a heat radiation member.
- the semiconductor chip includes s a conductive pad.
- the die pad includes a top surface on which the semiconductor chip is mounted and a bottom surface facing the top surface and has a first thickness between the top surface and the bottom surface.
- the lead pattern includes a first portion that is contiguously disposed at the edge of the die pad and has the first thickness and a second portion that is merged with the first portion and has a second thickness greater than the first thickness.
- the heat radiation member is disposed on the die pad and the lead pattern and includes a groove formed at its bottom surface facing the die pad and the lead pattern.
- the conductive line is disposed to electrically connect the conductive pad to the lead pattern corresponding to the conductive pad and is partially inserted into the groove.
- the semiconductor device package may include a conductive plate patterned into a lead pattern and a die pad spaced apart from each other, the lead pattern disposed at an edge of the die pad and including a first portion having a same thickness as and adjacent to the die pad and a second portion having a thickness greater than the thickness of the first portion, the first portion being disposed between the second portion and the die pad; a semiconductor chip including at least one conductive pad and disposed on the die pad; a heat radiation member including opposing ends disposed on the second portions of the lead pattern and including a groove formed at its bottom surface facing the die pad and the first portion of the lead pattern; and a conductive line disposed to electrically connect the at least one conductive pad to the lead pattern corresponding to the conductive pad and partially inserted into the groove.
- the method of fabricating a semiconductor package may include forming a die pad and a lead pattern from a conductive plate, the lead pattern being contiguously spaced apart from an edge of the die pad and including a first conductive pattern having a first thickness and a second conductive pattern having a second thickness less than the first thickness and disposed between the first conductive pattern and the die pad; forming a plating layer on the second conductive pattern; mounting a semiconductor chip on the die pad using an adhesive layer and forming at least one chip pad on the semiconductor chip; connective a conductive metal line between the plating layer and a corresponding chip pad; forming a heat radiation plate from a conductive material, the radiation plate having a third thickness and a groove formed therein to a fourth thickness less than second thickness; and aligning the radiation layer on the lead pattern such that a first portion of the conductive metal line the groove such that the conductive metal line is isolated from the radiation member.
- FIG. 1A is a cross-sectional view of a semiconductor device package according to an embodiment of the present general inventive concept.
- FIG. 1B is a top plan view of a heat radiation member of a semiconductor device package according to an embodiment of the present general inventive concept.
- FIGS. 2 through 7 are cross-sectional views illustrating a method of fabricating a semiconductor device package according to an embodiment of the present general inventive concept.
- FIG. 8A is a cross-sectional view of a semiconductor device package according to an alternative embodiment of the present general inventive concept.
- FIG. 8B is a top plan view of a heat radiation member of a semiconductor device package according to the alternative embodiment of FIG. 8A .
- FIG. 9A is a cross-sectional view of a semiconductor device package according to another alternative embodiment of the present general inventive concept.
- FIG. 9B is a top plan view of a heat radiation member of the semiconductor device package according to the alternative embodiment of FIG. 9A .
- FIG. 10 is a block diagram of a system of electronic equipment including a semiconductor device package according to an embodiment of the present general inventive concept.
- FIG. 1A is a cross-sectional view of a semiconductor device package 500 according to an embodiment of the present general inventive concept
- FIG. 1B is a top plan view of a heat radiation member 300 of the semiconductor device package 500 .
- the semiconductor device package 500 includes a die pad 102 , a lead pattern 104 , a semiconductor chip 200 , the heat radiation member 300 , and a molding part 400 .
- the semiconductor device package 500 may be, for example, an exposed lead package (ELP).
- the die pad 102 may have a top surface 102 a and a bottom surface 102 b opposite the top surface 102 a.
- the die pad 102 may have a thickness t 2 which may be equivalent to a distance between the top and bottom surfaces 102 a and 102 b.
- the die pad 102 may be made of a conductive material having superior electrical and thermal conductivities, for example, a metal such as copper (Cu) or a metal-alloy.
- the semiconductor chip 200 is mounted on the top surface 102 a of the die pad 102 .
- the bottom surface 102 b is exposed. Heat, which is generated from the semiconductor chip 200 during the operation of the semiconductor chip 200 , can be released through the bottom surface 102 b. Furthermore, a ground can be connected to the exposed bottom surface 102 b of the die pad 102 .
- the semiconductor chip 200 is fixed to the die pad 102 by an adhesion layer 150 , which may include, for example, an epoxy-based liquid or film-type adhesive or a silicon-based liquid or film-type adhesive.
- An integrated circuit (not shown) is disposed on the semiconductor chip 200 .
- a plurality of chip pads 202 may be arranged at the edge of the semiconductor chip 200 to be electrically connected to the integrated circuit.
- Each of the chip pads 202 may be made of a conductive material, for example, a metal such as aluminum (Al) or copper (Cu) or a metal-alloy.
- the lead pattern 104 is provided to be contiguously spaced apart from the edge of the die pad 102 .
- the lead pattern 104 may comprise a plurality of lead patterns spaced apart from one another and arranged to correspond to the chip pad 202 .
- the lead pattern 104 may have a bottom surface which is coplanar with the bottom surface 102 b of the die pad 102 .
- the lead pattern 104 may include a first lead conductive pattern 104 Y having the thickness t 2 and a second lead conductive pattern 104 X having a thickness t 1 greater than the thickness t 2 .
- the first lead conductive pattern 104 Y may be disposed adjacent to the edge of the die pad 102 .
- the first and second conductive patterns 104 Y and 104 X may be merged into one pattern.
- a plating layer 110 may be disposed on a top surface 104 YF of the first lead conductive pattern 104 Y.
- the plating layer 110 may include, for example, silver (Ag) or palladium (Pd).
- the plating layer 110 serves to improve an electrical connection with a conductive metal line 250 .
- the heat radiation member 300 may be disposed on the lead pattern 104 and the semiconductor chip 200 .
- the heat radiation member 300 may be made of a conductive material having a superior thermal conductivity, for example, a metal such as copper (Cu) or a metal-alloy.
- the heat radiation member 300 may be used to release heat generated at the semiconductor chip 200 during the operation of the semiconductor device and to enhance mechanical strength of the semiconductor device package 500 .
- the heat radiation member 300 may include an edge portion 300 X having a thickness t 3 and a groove 300 H having a depth t 4 less than the thickness t 3 .
- the edge portion 300 X is disposed at the edge of the heat radiation member 300
- the groove 300 H is formed at the inner side of the edge portion 300 X.
- a bottom surface 300 XF of the edge portion 300 X may be in contact with a top surface 104 XF of the second lead conductive pattern 104 X to be coupled with each other.
- the groove 300 H may be defined by inner side surfaces 300 S of the edge portion 300 X and a plane 300 F connecting the inner side surfaces 300 S to each other.
- the conductive metal line 250 may be wire-bonded to the chip pad 202 and the plating layer 110 corresponding to the chip pad 202 .
- the conductive metal line 250 may be made of, for example, gold (Au).
- the wire-bonded conductive metal line 250 may be disposed at a space defined by the plane 300 F of the groove 300 H, the top surface 104 YF of the first lead conductive pattern 104 Y, and the top surface 102 a of the die pad 102 .
- the conductive metal line 250 may include a first portion 250 A that is curved and inserted into the groove 300 H and a second portion 250 B that is not inserted therein.
- the first portion 250 A may include a curved portion that is disposed adjacent to the chip 202 and higher than a virtual surface 300 XFL extending from the bottom surface 300 XF of the edge portion 300 X of the heat radiation member 300 .
- the second portion 250 B may include a nearly straight portion that is disposed adjacent to the plating layer 110 and lower than the virtual surface 300 XFL.
- the depth t 4 may be a depth enough to insert the first portion 250 A of the conductive metal line 250 therein.
- the inserted first portion 250 a of the conductive metal line 250 is spaced apart from the plane 300 F and the inner side surfaces 300 S of the groove 300 H, electrically isolating the metal conductive line 250 from the heat radiation member 300 .
- An insulating layer (not shown) may be disposed on the inner side surfaces 300 S and a plane 300 F of the groove 300 H such that the inserted first portion 250 A of the conductive metal line 250 is contiguously spaced apart from the plane 300 F of the groove 300 H.
- the insulating layer may be, for example, a black oxide layer.
- the first portion 250 A of the conductive metal line 250 may be inserted into the groove 300 H. Therefore, a thickness of the semiconductor device package 500 may be reduced by the depth t 4 of the groove 300 H of the heat radiation member 300 , as compared to a case where the heat radiation member 300 would be a flat plate having the thickness t 3 without a groove therein.
- the semiconductor chip 200 may be disposed on the die pad 102 having the thickness t 2 to be as low (distance of the die pad 102 from the virtual surface 300 XFL of the heat radiation member 300 ) as a difference between the thickness t 1 and the thickness t 2 . Therefore, the thickness of the semiconductor device package 500 may be reduced by the difference between the thickness t 1 and the thickness t 2 . As a result, a thinner and lighter semiconductor device package 500 may be achieved.
- FIGS. 2 through 7 are cross-sectional views illustrating a method of fabricating a semiconductor device package according to an embodiment of the present general inventive concept.
- a frame conductive plate 100 including a top surface 100 a and a bottom surface 100 b opposing the top surface 100 a.
- the frame conductive plate 100 may be formed of a conductive material having superior electrical and thermal conductivity, for example, a metal such as copper (Cu) or a metal-alloy.
- the frame conductive plate 100 may have, for example, a thickness t 1 between the top surface 100 a and the bottom surface 100 b.
- the frame conductive plate 100 is patterned to form a die pad 102 and a lead pattern 104 .
- the patterning process may include, for example, a half-etching process or a half-stamping process, which may allow the die pad 102 to have a thickness t 2 that is less than the thickness t 1 .
- the lead pattern 104 may be formed to be contiguously spaced apart from the edge of the die pad 102 .
- the lead pattern 104 is formed to correspond to a chip pad ( 202 in FIG. 1 ).
- the lead pattern 104 may comprise a plurality of lead patterns spaced apart from one another.
- the lead pattern 104 may include a first lead conductive pattern 104 Y having the thickness t 2 and a second lead conductive pattern 104 X having the thickness t 1 .
- a plating layer 110 may be formed on a top surface 104 YF of the first lead conductive pattern 104 Y.
- the plating layer 104 may include, for example, silver (Ag) or palladium (Pd).
- the plating layer 110 serves to improve an electrical connection with a conductive metal line 250 wire-bonded thereto in a subsequent process.
- a semiconductor chip 200 is mounted on the top surface 102 a of the die pad 102 using an adhesion layer 150 which may be formed by means of a dispense technique.
- the adhesion layer 150 may include, for example, an epoxy-based or silicon-based adhesive of a liquid or film type.
- An integrated circuit (not shown) is formed on the semiconductor chip 200 .
- a plurality of chip pads 202 may be formed on a top surface of the integrated circuit to be electrically connected to the integrated circuit.
- the plurality of chip pads 202 may be arranged at the edge of the semiconductor chip 200 .
- the chip pad 202 may be formed of a conductive material, for example, a metal such as aluminum (Al) or copper (Cu) or a metal-alloy.
- the chip pad 202 and a corresponding plating layer 110 may be wire-bonded using a conductive metal line 250 which may be formed of, for example, gold (Au).
- the wire-bonded conductive metal line 250 includes a first portion 250 A and a second portion 250 B.
- the first portion 250 A may include a portion which is adjacent to the chip pad 202 and higher than a virtual surface 104 XFL extending from a top surface 104 XF of a first lead conductive pattern 104 Y.
- the second portion 250 B may include a portion which is adjacent to the plating layer 205 B and lower than the virtual surface 104 XFL.
- the heat radiation plate 300 P may be formed of a conductive material having a superior thermal conductivity, for example, a metal such as copper (Cu) or a metal-alloy.
- the heat radiation plate 300 P may have, for example, a third thickness t 3 .
- a half-etching process may be performed for the heat radiation plate 300 P to form an edge portion 300 X at the edge of the heat radiation plate 300 P and a heat radiation member 300 at the inner side of the edge portion 300 X.
- the edge portion 300 X has the thickness t 3
- the heat radiation member 300 P includes a groove 300 H having a depth t 4 , which is enough to insert the first portion ( 250 A in FIG. 4 ) of the conductive metal line ( 250 in FIG. 4 ) into the groove 300 H.
- the groove 300 H may be defined by inner side surfaces 300 S of the edge portion 300 X and a plane 300 F connecting the inner side surfaces 300 S to each other.
- An insulating layer (not shown) may be formed on the plane 300 F and the inner side surfaces 250 S.
- the insulating layer may be, for example, a black oxide layer.
- the insulating layer may allow the first portion 250 A inserted in a subsequent process to be contiguously spaced apart from the plane 300 F and the inner side surfaces 300 S.
- the heat radiation member 300 is aligned on the lead pattern 104 and the die pad 102 to insert the first portion 250 A of the conductive metal line 250 into the groove 300 H.
- the edge portion 300 X of the heat radiation member 300 is coupled with the top surface 104 XF of the second lead conductive pattern 104 X.
- the inserted first portion 250 A of the conductive metal line 250 is spaced apart from the plane 300 F and the inner side surfaces 300 S of the groove 300 H to electrically isolate the conductive metal line 250 from the heat radiation member 300 .
- the first portion 250 A may include a curved portion which is adjacent to the chip pad 202 and higher than the virtual surface 300 XFL extending from the bottom surface 300 XF of the edge portion 300 X of the heat radiation member 300 .
- the second portion 250 B may include a nearly straight portion which is adjacent to the molding layer 110 and lower than the virtual surface 300 XFL.
- a molding part 400 may be formed to mold the semiconductor chip 200 , the die pad 102 , the lead pattern 104 , the conductive metal line 250 , and the heat radiation member 300 .
- the molding part 400 may be formed of a molding resin such as, for example, epoxy molding compound (EMC).
- EMC epoxy molding compound
- a thickness of the semiconductor device package 500 may be reduced by a thickness which is equivalent to the depth t 4 of the groove 300 H of the heat radiation plate 300 P.
- the thickness of the semiconductor device package 500 may be reduced by a difference between the first thickness t 1 and the second thickness t 2 .
- the semiconductor device package 500 may become thinner and lighter.
- FIG. 8A is a cross-sectional view of a semiconductor device package according to an alternative embodiment of the present general inventive concept
- FIG. 8B is a top plan view of a heat radiation member of the semiconductor device package shown in FIG. 8A .
- the semiconductor device package according to the present alternative embodiment may be similar to that according to the foregoing embodiment. Thus, duplications thereof will be explained briefly or omitted.
- a heat radiation member 300 TA may include an edge portion 300 X formed at the edge of the heat radiation member 300 TA and having a thickness t 3 , a central portion 300 PC aligned to a mounted semiconductor chip 200 and having a thickness t 3 , and a groove 300 HTA formed between the edge portion 300 X and the central portion 300 PC having a depth t 4 which is less than the thickness t 3 .
- the groove 300 HTA surrounds the central portion 300 PC and may be defined by inner side surfaces of the edge portion 300 X and a plane connected to the inner side surfaces.
- a bottom surface 300 PCF of the central portion 300 PC and a bottom surface of the edge portion 300 XF may be coplanar with each other.
- the central portion 300 PC may be spaced apart from a chip pad 202 and a conductive metal line 250 which is contiguously connected to the chip pad 202 .
- a bottom surface 300 PCF of the central portion 300 PC may be contiguously spaced apart from the top surface of the semiconductor chip 200 .
- the heat radiation member 300 TA of the embodiment of FIG. 8A may effectively release heat generated at the semiconductor chip 200 through the central portion 300 PC.
- FIG. 9A is a cross-sectional view of a semiconductor device package according to yet another alternative embodiment of the present general inventive concept
- FIG. 9B is a top plan view of a heat radiation member of the semiconductor device package shown in FIG. 9A .
- the semiconductor device package according to this alternative embodiment may be similar to that according to the foregoing embodiment. Thus, duplications thereof will be explained briefly or omitted.
- a plurality of grooves 300 HTB may be formed at a bottom surface of a heat radiation plate 300 TB to correspond to a plurality of conductive metal lines 250 , respectively.
- Each groove 300 HTB has a small width 300 W, so that only one conductive metal line 250 may be inserted into the groove 300 HTB.
- Each of the grooves 300 HTB has a depth t 4 .
- the groove 300 HTB may be formed to have the small width 300 W, so that only one conductive metal line 250 may be inserted into the groove 300 HTB.
- the heat radiation member 300 TB may have a wide area, releasing heat generated at a semiconductor chip 200 , correspond to a bottom surface of the heat radiation member 300 TB.
- FIG. 10 is a block diagram illustrating a system of an electronic equipment including a semiconductor device package according to an embodiment of the present general inventive concept.
- the system may include a mobile communication terminal 1000 including, for example, a radio frequency communication chip (RF chip) 1020 , a smart card 1030 , a switching circuit 1040 , a battery 1050 , and a controller 1060 .
- the mobile communication terminal 1000 may include a semiconductor device package 500 according to embodiments of the present general inventive concept. That is, the mobile communication terminal 1000 may be a thin and light electronic device because the semiconductor device package 500 is thin and light.
- RF chip radio frequency communication chip
- the semiconductor device package 500 may be manufactured with, for example, a memory chip or a logic chip.
- the RF chip 1020 may include, for example, a processor and a memory chip.
- the smart card 1030 may include a memory chip, and the controller 1060 may include a logic chip.
- the RF chip 1020 transmits/receives wireless signals to/from an external RFID reader (not shown) through an antenna 1010 .
- the RF chip 1020 transmits a signal received from the smart card 1030 or the controller 1060 to the RFID reader and transmits a signal received from the RFID reader through the antenna 1010 to the smart card 1030 or the controller 1060 .
- the smart card 1030 communicates with the RF chip 1020 and the controller 1060 .
- the battery 1050 supplies power that the mobile communication terminal 1000 needs.
- the controller 1060 controls general operations of the mobile communication terminal 1000 .
- the electronic equipment including a semiconductor device package 500 may include, for example, not only a mobile communication terminal 1000 but also various mobile devices such as personal digital assistants (PDA), MP3 players, movie players, portable game machines, desktop computers, mainframe computers, global positioning systems (GPS), PC cards, notebook computers, camcorders, and digital cameras.
- PDA personal digital assistants
- MP3 players MP3 players
- movie players Portable game machines
- desktop computers mainframe computers
- GPS global positioning systems
- PC cards notebook computers
- camcorders camcorders
Abstract
A semiconductor device package includes a semiconductor chip including a conductive pad, a die pad on which the semiconductor chip is mounted and having a first thickness, a lead pattern including a first portion disposed adjacent to the edge of the die pad and having the first thickness and a second portion having a second thickness greater than the first thickness, a heat radiation member disposed on the die pad and the lead pattern and including a groove formed at its bottom surface, and a conductive line disposed to electrically connect the conductive pad to the lead pattern corresponding to the conductive pad and partially inserted into the groove.
Description
- This U. S non-provisional patent application claims priority under 35 U.S.C §119 to Korean Patent Application No. 10-2008-0071759, filed on Jul. 23, 2008, in the Korean Intellectual Property Office (KIPO), the entirety of which is incorporated herein by reference.
- 1. Field of the Invention
- The present general inventive concept relates to semiconductor device packages and, more specifically, to exposed lead semiconductor device packages and methods of fabricating the same.
- 2. Description of the Related Art
- A plurality of semiconductor chips are formed on a semiconductor wafer through various processes. The plurality of semiconductor chips are cut along scribe lines engraved on the semiconductor wafer to be divided into individual semiconductor chips. A package process is performed to mount the individual semiconductor chips on a system board to complete a semiconductor device package. With the marvelous advance in electronic devices and the trend toward smaller and thinner electronic devices, there is a need for lighter, smaller, faster, multi-functional, high-performance, and high-reliability semiconductor device packages. Exposed lead packages (ELPs) are proposed to meet the need. An ELP includes a package body formed to expose bottom surfaces of leads and a die pad on which a semiconductor chip is mounted.
- Exemplary embodiments of the present general inventive concept are directed to a semiconductor device package and a method of forming the same. In an exemplary embodiment, the semiconductor device package may include a semiconductor chip, a die pad, a lead pattern, and a heat radiation member. The semiconductor chip includes s a conductive pad. The die pad includes a top surface on which the semiconductor chip is mounted and a bottom surface facing the top surface and has a first thickness between the top surface and the bottom surface. The lead pattern includes a first portion that is contiguously disposed at the edge of the die pad and has the first thickness and a second portion that is merged with the first portion and has a second thickness greater than the first thickness. The heat radiation member is disposed on the die pad and the lead pattern and includes a groove formed at its bottom surface facing the die pad and the lead pattern. The conductive line is disposed to electrically connect the conductive pad to the lead pattern corresponding to the conductive pad and is partially inserted into the groove.
- In another exemplary embodiment, the semiconductor device package may include a conductive plate patterned into a lead pattern and a die pad spaced apart from each other, the lead pattern disposed at an edge of the die pad and including a first portion having a same thickness as and adjacent to the die pad and a second portion having a thickness greater than the thickness of the first portion, the first portion being disposed between the second portion and the die pad; a semiconductor chip including at least one conductive pad and disposed on the die pad; a heat radiation member including opposing ends disposed on the second portions of the lead pattern and including a groove formed at its bottom surface facing the die pad and the first portion of the lead pattern; and a conductive line disposed to electrically connect the at least one conductive pad to the lead pattern corresponding to the conductive pad and partially inserted into the groove.
- In another exemplary embodiment, the method of fabricating a semiconductor package may include forming a die pad and a lead pattern from a conductive plate, the lead pattern being contiguously spaced apart from an edge of the die pad and including a first conductive pattern having a first thickness and a second conductive pattern having a second thickness less than the first thickness and disposed between the first conductive pattern and the die pad; forming a plating layer on the second conductive pattern; mounting a semiconductor chip on the die pad using an adhesive layer and forming at least one chip pad on the semiconductor chip; connective a conductive metal line between the plating layer and a corresponding chip pad; forming a heat radiation plate from a conductive material, the radiation plate having a third thickness and a groove formed therein to a fourth thickness less than second thickness; and aligning the radiation layer on the lead pattern such that a first portion of the conductive metal line the groove such that the conductive metal line is isolated from the radiation member.
- Additional aspects and utilities of the present general inventive concept will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the general inventive concept.
- These and/or other aspects and utilities of the present general inventive concept will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
-
FIG. 1A is a cross-sectional view of a semiconductor device package according to an embodiment of the present general inventive concept. -
FIG. 1B is a top plan view of a heat radiation member of a semiconductor device package according to an embodiment of the present general inventive concept. -
FIGS. 2 through 7 are cross-sectional views illustrating a method of fabricating a semiconductor device package according to an embodiment of the present general inventive concept. -
FIG. 8A is a cross-sectional view of a semiconductor device package according to an alternative embodiment of the present general inventive concept. -
FIG. 8B is a top plan view of a heat radiation member of a semiconductor device package according to the alternative embodiment ofFIG. 8A . -
FIG. 9A is a cross-sectional view of a semiconductor device package according to another alternative embodiment of the present general inventive concept. -
FIG. 9B is a top plan view of a heat radiation member of the semiconductor device package according to the alternative embodiment ofFIG. 9A . -
FIG. 10 is a block diagram of a system of electronic equipment including a semiconductor device package according to an embodiment of the present general inventive concept. - The present general inventive concept will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the general inventive concept are shown. This general inventive concept, however, may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the general inventive concept to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like numbers refer to like elements throughout.
-
FIG. 1A is a cross-sectional view of asemiconductor device package 500 according to an embodiment of the present general inventive concept, andFIG. 1B is a top plan view of aheat radiation member 300 of thesemiconductor device package 500. - As shown in
FIGS. 1A and 1B , thesemiconductor device package 500 includes adie pad 102, alead pattern 104, asemiconductor chip 200, theheat radiation member 300, and amolding part 400. Thesemiconductor device package 500 may be, for example, an exposed lead package (ELP). - The die
pad 102 may have atop surface 102 a and abottom surface 102 b opposite thetop surface 102 a. Thedie pad 102 may have a thickness t2 which may be equivalent to a distance between the top andbottom surfaces die pad 102 may be made of a conductive material having superior electrical and thermal conductivities, for example, a metal such as copper (Cu) or a metal-alloy. Thesemiconductor chip 200 is mounted on thetop surface 102 a of thedie pad 102. Thebottom surface 102 b is exposed. Heat, which is generated from thesemiconductor chip 200 during the operation of thesemiconductor chip 200, can be released through thebottom surface 102 b. Furthermore, a ground can be connected to the exposedbottom surface 102 b of thedie pad 102. - The
semiconductor chip 200 is fixed to thedie pad 102 by anadhesion layer 150, which may include, for example, an epoxy-based liquid or film-type adhesive or a silicon-based liquid or film-type adhesive. An integrated circuit (not shown) is disposed on thesemiconductor chip 200. A plurality ofchip pads 202 may be arranged at the edge of thesemiconductor chip 200 to be electrically connected to the integrated circuit. Each of thechip pads 202 may be made of a conductive material, for example, a metal such as aluminum (Al) or copper (Cu) or a metal-alloy. - The
lead pattern 104 is provided to be contiguously spaced apart from the edge of thedie pad 102. Thelead pattern 104 may comprise a plurality of lead patterns spaced apart from one another and arranged to correspond to thechip pad 202. Thelead pattern 104 may have a bottom surface which is coplanar with thebottom surface 102 b of thedie pad 102. Thelead pattern 104 may include a first leadconductive pattern 104Y having the thickness t2 and a second leadconductive pattern 104X having a thickness t1 greater than the thickness t2. The first leadconductive pattern 104Y may be disposed adjacent to the edge of thedie pad 102. The first and secondconductive patterns - A
plating layer 110 may be disposed on a top surface 104YF of the first leadconductive pattern 104Y. Theplating layer 110 may include, for example, silver (Ag) or palladium (Pd). Theplating layer 110 serves to improve an electrical connection with aconductive metal line 250. - The
heat radiation member 300 may be disposed on thelead pattern 104 and thesemiconductor chip 200. Theheat radiation member 300 may be made of a conductive material having a superior thermal conductivity, for example, a metal such as copper (Cu) or a metal-alloy. Theheat radiation member 300 may be used to release heat generated at thesemiconductor chip 200 during the operation of the semiconductor device and to enhance mechanical strength of thesemiconductor device package 500. - The
heat radiation member 300 may include anedge portion 300X having a thickness t3 and agroove 300H having a depth t4 less than the thickness t3. Theedge portion 300X is disposed at the edge of theheat radiation member 300, and thegroove 300H is formed at the inner side of theedge portion 300X. A bottom surface 300XF of theedge portion 300X may be in contact with a top surface 104XF of the second leadconductive pattern 104X to be coupled with each other. Thegroove 300H may be defined by inner side surfaces 300S of theedge portion 300X and aplane 300F connecting the inner side surfaces 300S to each other. - The
conductive metal line 250 may be wire-bonded to thechip pad 202 and theplating layer 110 corresponding to thechip pad 202. Theconductive metal line 250 may be made of, for example, gold (Au). The wire-bondedconductive metal line 250 may be disposed at a space defined by theplane 300F of thegroove 300H, the top surface 104YF of the first leadconductive pattern 104Y, and thetop surface 102 a of thedie pad 102. Theconductive metal line 250 may include afirst portion 250A that is curved and inserted into thegroove 300H and asecond portion 250B that is not inserted therein. Thefirst portion 250A may include a curved portion that is disposed adjacent to thechip 202 and higher than a virtual surface 300XFL extending from the bottom surface 300XF of theedge portion 300X of theheat radiation member 300. Thesecond portion 250B may include a nearly straight portion that is disposed adjacent to theplating layer 110 and lower than the virtual surface 300XFL. The depth t4 may be a depth enough to insert thefirst portion 250A of theconductive metal line 250 therein. The inserted first portion 250 a of theconductive metal line 250 is spaced apart from theplane 300F and the inner side surfaces 300S of thegroove 300H, electrically isolating the metalconductive line 250 from theheat radiation member 300. An insulating layer (not shown) may be disposed on theinner side surfaces 300S and aplane 300F of thegroove 300H such that the insertedfirst portion 250A of theconductive metal line 250 is contiguously spaced apart from theplane 300F of thegroove 300H. The insulating layer may be, for example, a black oxide layer. - As set forth above, the
first portion 250A of theconductive metal line 250 may be inserted into thegroove 300H. Therefore, a thickness of thesemiconductor device package 500 may be reduced by the depth t4 of thegroove 300H of theheat radiation member 300, as compared to a case where theheat radiation member 300 would be a flat plate having the thickness t3 without a groove therein. In addition, thesemiconductor chip 200 may be disposed on thedie pad 102 having the thickness t2 to be as low (distance of thedie pad 102 from the virtual surface 300XFL of the heat radiation member 300) as a difference between the thickness t1 and the thickness t2. Therefore, the thickness of thesemiconductor device package 500 may be reduced by the difference between the thickness t1 and the thickness t2. As a result, a thinner and lightersemiconductor device package 500 may be achieved. -
FIGS. 2 through 7 are cross-sectional views illustrating a method of fabricating a semiconductor device package according to an embodiment of the present general inventive concept. - Referring to
FIG. 2 , there is provided a frameconductive plate 100 including atop surface 100 a and abottom surface 100 b opposing thetop surface 100 a. The frameconductive plate 100 may be formed of a conductive material having superior electrical and thermal conductivity, for example, a metal such as copper (Cu) or a metal-alloy. The frameconductive plate 100 may have, for example, a thickness t1 between thetop surface 100 a and thebottom surface 100 b. - Referring to
FIG. 3 , the frameconductive plate 100 is patterned to form adie pad 102 and alead pattern 104. The patterning process may include, for example, a half-etching process or a half-stamping process, which may allow thedie pad 102 to have a thickness t2 that is less than the thickness t1. - The
lead pattern 104 may be formed to be contiguously spaced apart from the edge of thedie pad 102. Thelead pattern 104 is formed to correspond to a chip pad (202 inFIG. 1 ). Thelead pattern 104 may comprise a plurality of lead patterns spaced apart from one another. Thelead pattern 104 may include a first leadconductive pattern 104Y having the thickness t2 and a second leadconductive pattern 104X having the thickness t1. - A
plating layer 110 may be formed on a top surface 104YF of the first leadconductive pattern 104Y. Theplating layer 104 may include, for example, silver (Ag) or palladium (Pd). Theplating layer 110 serves to improve an electrical connection with aconductive metal line 250 wire-bonded thereto in a subsequent process. - Referring to
FIG. 4 , asemiconductor chip 200 is mounted on thetop surface 102 a of thedie pad 102 using anadhesion layer 150 which may be formed by means of a dispense technique. Theadhesion layer 150 may include, for example, an epoxy-based or silicon-based adhesive of a liquid or film type. An integrated circuit (not shown) is formed on thesemiconductor chip 200. A plurality ofchip pads 202 may be formed on a top surface of the integrated circuit to be electrically connected to the integrated circuit. The plurality ofchip pads 202 may be arranged at the edge of thesemiconductor chip 200. Thechip pad 202 may be formed of a conductive material, for example, a metal such as aluminum (Al) or copper (Cu) or a metal-alloy. - The
chip pad 202 and acorresponding plating layer 110 may be wire-bonded using aconductive metal line 250 which may be formed of, for example, gold (Au). The wire-bondedconductive metal line 250 includes afirst portion 250A and asecond portion 250B. Thefirst portion 250A may include a portion which is adjacent to thechip pad 202 and higher than a virtual surface 104XFL extending from a top surface 104XF of a first leadconductive pattern 104Y. Thesecond portion 250B may include a portion which is adjacent to the plating layer 205B and lower than the virtual surface 104XFL. - Referring to
FIG. 5 , aheat radiation plate 300P is provided. Theheat radiation plate 300P may be formed of a conductive material having a superior thermal conductivity, for example, a metal such as copper (Cu) or a metal-alloy. Theheat radiation plate 300P may have, for example, a third thickness t3. - Referring to
FIG. 6 , a half-etching process may be performed for theheat radiation plate 300P to form anedge portion 300X at the edge of theheat radiation plate 300P and aheat radiation member 300 at the inner side of theedge portion 300X. Theedge portion 300X has the thickness t3, and theheat radiation member 300P includes agroove 300H having a depth t4, which is enough to insert the first portion (250A inFIG. 4 ) of the conductive metal line (250 inFIG. 4 ) into thegroove 300H. Thegroove 300H may be defined by inner side surfaces 300S of theedge portion 300X and aplane 300F connecting the inner side surfaces 300S to each other. - An insulating layer (not shown) may be formed on the
plane 300F and the inner side surfaces 250S. The insulating layer may be, for example, a black oxide layer. The insulating layer may allow thefirst portion 250A inserted in a subsequent process to be contiguously spaced apart from theplane 300F and the inner side surfaces 300S. - Referring to
FIG. 7 , theheat radiation member 300 is aligned on thelead pattern 104 and thedie pad 102 to insert thefirst portion 250A of theconductive metal line 250 into thegroove 300H. Theedge portion 300X of theheat radiation member 300 is coupled with the top surface 104XF of the second leadconductive pattern 104X. - Returning to
FIG. 1A , the insertedfirst portion 250A of theconductive metal line 250 is spaced apart from theplane 300F and the inner side surfaces 300S of thegroove 300H to electrically isolate theconductive metal line 250 from theheat radiation member 300. Thefirst portion 250A may include a curved portion which is adjacent to thechip pad 202 and higher than the virtual surface 300XFL extending from the bottom surface 300XF of theedge portion 300X of theheat radiation member 300. Thesecond portion 250B may include a nearly straight portion which is adjacent to themolding layer 110 and lower than the virtual surface 300XFL. - By injecting a molding material between the
lead patterns 104 spaced apart from each other and between thelead pattern 104 and thedie pad 102, amolding part 400 may be formed to mold thesemiconductor chip 200, thedie pad 102, thelead pattern 104, theconductive metal line 250, and theheat radiation member 300. Themolding part 400 may be formed of a molding resin such as, for example, epoxy molding compound (EMC). A bottom surface of thedie pad 102 and a bottom surface of thelead pattern 104 are exposed externally. The exposed bottom surface of thelead pattern 104 may be used for electrical connection with external sources. - According to this embodiment, a thickness of the
semiconductor device package 500 may be reduced by a thickness which is equivalent to the depth t4 of thegroove 300H of theheat radiation plate 300P. In that thedie pad 102 has a second thickness t2, the thickness of thesemiconductor device package 500 may be reduced by a difference between the first thickness t1 and the second thickness t2. Thus, thesemiconductor device package 500 may become thinner and lighter. -
FIG. 8A is a cross-sectional view of a semiconductor device package according to an alternative embodiment of the present general inventive concept, andFIG. 8B is a top plan view of a heat radiation member of the semiconductor device package shown inFIG. 8A . The semiconductor device package according to the present alternative embodiment may be similar to that according to the foregoing embodiment. Thus, duplications thereof will be explained briefly or omitted. - Referring to
FIGS. 8A and 8B , a heat radiation member 300TA may include anedge portion 300X formed at the edge of the heat radiation member 300TA and having a thickness t3, a central portion 300PC aligned to a mountedsemiconductor chip 200 and having a thickness t3, and a groove 300HTA formed between theedge portion 300X and the central portion 300PC having a depth t4 which is less than the thickness t3. The groove 300HTA surrounds the central portion 300PC and may be defined by inner side surfaces of theedge portion 300X and a plane connected to the inner side surfaces. A bottom surface 300PCF of the central portion 300PC and a bottom surface of the edge portion 300XF may be coplanar with each other. Since the bottom surface 300PCF of the central portion 300PC has a smaller width than a top surface of thesemiconductor chip 200, the central portion 300PC may be spaced apart from achip pad 202 and aconductive metal line 250 which is contiguously connected to thechip pad 202. In addition, a bottom surface 300PCF of the central portion 300PC may be contiguously spaced apart from the top surface of thesemiconductor chip 200. - Unlike the previous embodiment, the heat radiation member 300TA of the embodiment of
FIG. 8A may effectively release heat generated at thesemiconductor chip 200 through the central portion 300PC. -
FIG. 9A is a cross-sectional view of a semiconductor device package according to yet another alternative embodiment of the present general inventive concept, andFIG. 9B is a top plan view of a heat radiation member of the semiconductor device package shown inFIG. 9A . The semiconductor device package according to this alternative embodiment may be similar to that according to the foregoing embodiment. Thus, duplications thereof will be explained briefly or omitted. - Referring to
FIGS. 9A and 9B , a plurality of grooves 300HTB may be formed at a bottom surface of a heat radiation plate 300TB to correspond to a plurality ofconductive metal lines 250, respectively. Each groove 300HTB has asmall width 300W, so that only oneconductive metal line 250 may be inserted into the groove 300HTB. Each of the grooves 300HTB has a depth t4. - Unlike the previous embodiment, the groove 300HTB may be formed to have the
small width 300W, so that only oneconductive metal line 250 may be inserted into the groove 300HTB. Thus, the heat radiation member 300TB may have a wide area, releasing heat generated at asemiconductor chip 200, correspond to a bottom surface of the heat radiation member 300TB. -
FIG. 10 is a block diagram illustrating a system of an electronic equipment including a semiconductor device package according to an embodiment of the present general inventive concept. The system may include amobile communication terminal 1000 including, for example, a radio frequency communication chip (RF chip) 1020, asmart card 1030, aswitching circuit 1040, abattery 1050, and acontroller 1060. Themobile communication terminal 1000 may include asemiconductor device package 500 according to embodiments of the present general inventive concept. That is, themobile communication terminal 1000 may be a thin and light electronic device because thesemiconductor device package 500 is thin and light. - The
semiconductor device package 500 according to the embodiments of the present general inventive concept may be manufactured with, for example, a memory chip or a logic chip. TheRF chip 1020 may include, for example, a processor and a memory chip. Thesmart card 1030 may include a memory chip, and thecontroller 1060 may include a logic chip. - The
RF chip 1020 transmits/receives wireless signals to/from an external RFID reader (not shown) through anantenna 1010. TheRF chip 1020 transmits a signal received from thesmart card 1030 or thecontroller 1060 to the RFID reader and transmits a signal received from the RFID reader through theantenna 1010 to thesmart card 1030 or thecontroller 1060. Thesmart card 1030 communicates with theRF chip 1020 and thecontroller 1060. Thebattery 1050 supplies power that themobile communication terminal 1000 needs. Thecontroller 1060 controls general operations of themobile communication terminal 1000. - The electronic equipment including a
semiconductor device package 500 according to the present general inventive concept may include, for example, not only amobile communication terminal 1000 but also various mobile devices such as personal digital assistants (PDA), MP3 players, movie players, portable game machines, desktop computers, mainframe computers, global positioning systems (GPS), PC cards, notebook computers, camcorders, and digital cameras. - Although a few embodiments of the present general inventive concept have been shown and described, it will be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the appended claims and their equivalents
Claims (19)
1. A semiconductor device package comprising:
a semiconductor chip including a conductive pad;
a die pad including a top surface on which the semiconductor chip is mounted and a bottom surface opposing the top surface, the die pad having a first thickness between the top surface and the bottom surface;
a lead pattern including a first portion contiguously disposed at the edge of the die pad and having the first thickness and a second portion merged with the first portion and having a second thickness greater than the first thickness;
a heat radiation member disposed on the die pad and the lead pattern and including a groove formed at its bottom surface facing the die pad and the lead pattern; and
a conductive line disposed to electrically connect the conductive pad to the lead pattern corresponding to the conductive pad and partially inserted into the groove.
2. The semiconductor device package of claim 1 , wherein the heat radiation member includes an edge portion formed at its edge and having a third thickness and a groove formed at an inner side of the edge portion and having a fourth depth.
3. The semiconductor device package of claim 1 , wherein a bottom surface of the lead pattern is coplanar with a bottom surface of the die pad.
4. The semiconductor device package of claim 2 , wherein the second portion of the lead pattern is in contact with the edge portion of the heat radiation member.
5. The semiconductor device package of claim 2 , wherein the groove is defined by inner side surfaces of the edge portion and a plane connecting the inner side surfaces to each other.
6. The semiconductor device package of claim 5 , wherein the conductive line is disposed at a space defined by the plane, a top surface of the first portion of the lead pattern, and a top surface of the die pad.
7. The semiconductor device package of claim 5 , wherein the conductive line includes a first portion that is curved and inserted into the groove and a second portion that is not inserted into the groove.
8. The semiconductor device package of claim 5 , further comprising:
an insulating layer disposed to cover the inner side surfaces and the plane of the groove.
9. The semiconductor device package of claim 1 , wherein the heat radiation member includes an edge portion disposed at its edge and having the third thickness, a central portion aligned to the mounted semiconductor chip and having the third thickness, and a groove formed between the edge portion and the central portion and having a fourth depth that is smaller than the third thickness.
10. The semiconductor device package of claim 1 , wherein a plurality of grooves are formed at the heat radiation member to correspond to the conductive lines, respectively, the grooves each having a fourth depth.
11. The semiconductor device package of claim 1 , further comprising a molding part.
12. The semiconductor device package of claim 1 is an exposed lead package.
13. The semiconductor device package of claim 1 , wherein the bottom surface of the die pad is exposed and connected to a ground.
14. The semiconductor device package of claim 1 , further comprising an adhesive layer disposed between the semiconductor chip and the die pad.
15. The semiconductor device package of claim 14 , wherein the adhesive layer is an epoxy-based or silicon-based adhesive of a liquid or film type.
16. The semiconductor device package of claim 1 , further comprising a plating layer disposed on a top surface of the first portion of the lead pattern.
17. The semiconductor device package of claim 17 , wherein the plating layer comprises silver or palladium.
18. A semiconductor device package, comprising:
a conductive plate patterned into a lead pattern and a die pad spaced apart from each other, the lead pattern disposed at an edge of the die pad and including a first portion having a same thickness as and adjacent to the die pad and a second portion having a thickness greater than the thickness of the first portion, the first portion being disposed between the second portion and the die pad;
a semiconductor chip including at least one conductive pad and disposed on the die pad;
a heat radiation member including opposing ends disposed on the second portions of the lead pattern and including a groove formed at its bottom surface facing the die pad and the first portion of the lead pattern; and
a conductive line disposed to electrically connect the at least one conductive pad to the lead pattern corresponding to the conductive pad and partially inserted into the groove.
19-27. (canceled)
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106449568A (en) * | 2016-09-28 | 2017-02-22 | 上海斐讯数据通信技术有限公司 | Triode and cooling fin-combined material assembly structure |
CN107717982A (en) * | 2016-08-12 | 2018-02-23 | 财团法人工业技术研究院 | The control device and operating method of mechanical arm |
US20220384299A1 (en) * | 2021-05-25 | 2022-12-01 | Nxp Usa, Inc. | Semiconductor package thermal spreader having integrated rf/emi shielding and antenna elements |
US11935809B2 (en) | 2022-12-12 | 2024-03-19 | Nxp Usa, Inc. | Semiconductor package thermal spreader having integrated EF/EMI shielding and antenna elements |
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US8985535B1 (en) | 2014-06-08 | 2015-03-24 | Robert E. Townsend, Jr. | Wind resilient mast arm mounting assembly |
US9458974B2 (en) | 2014-06-08 | 2016-10-04 | Robert E. Townsend, Jr. | Flexible moment connection device for mast arm signal mounting |
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CN107717982A (en) * | 2016-08-12 | 2018-02-23 | 财团法人工业技术研究院 | The control device and operating method of mechanical arm |
CN106449568A (en) * | 2016-09-28 | 2017-02-22 | 上海斐讯数据通信技术有限公司 | Triode and cooling fin-combined material assembly structure |
US20220384299A1 (en) * | 2021-05-25 | 2022-12-01 | Nxp Usa, Inc. | Semiconductor package thermal spreader having integrated rf/emi shielding and antenna elements |
US11557525B2 (en) * | 2021-05-25 | 2023-01-17 | Nxp Usa, Inc. | Semiconductor package thermal spreader having integrated RF/EMI shielding and antenna elements |
US11935809B2 (en) | 2022-12-12 | 2024-03-19 | Nxp Usa, Inc. | Semiconductor package thermal spreader having integrated EF/EMI shielding and antenna elements |
Also Published As
Publication number | Publication date |
---|---|
US20120040498A1 (en) | 2012-02-16 |
KR20100010747A (en) | 2010-02-02 |
US8278154B2 (en) | 2012-10-02 |
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