JP2006024703A5 - - Google Patents

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Publication number
JP2006024703A5
JP2006024703A5 JP2004200887A JP2004200887A JP2006024703A5 JP 2006024703 A5 JP2006024703 A5 JP 2006024703A5 JP 2004200887 A JP2004200887 A JP 2004200887A JP 2004200887 A JP2004200887 A JP 2004200887A JP 2006024703 A5 JP2006024703 A5 JP 2006024703A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
semiconductor layer
buried film
semiconductor laser
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004200887A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006024703A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004200887A priority Critical patent/JP2006024703A/ja
Priority claimed from JP2004200887A external-priority patent/JP2006024703A/ja
Publication of JP2006024703A publication Critical patent/JP2006024703A/ja
Publication of JP2006024703A5 publication Critical patent/JP2006024703A5/ja
Pending legal-status Critical Current

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JP2004200887A 2004-07-07 2004-07-07 窒化物半導体レーザ素子 Pending JP2006024703A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004200887A JP2006024703A (ja) 2004-07-07 2004-07-07 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004200887A JP2006024703A (ja) 2004-07-07 2004-07-07 窒化物半導体レーザ素子

Publications (2)

Publication Number Publication Date
JP2006024703A JP2006024703A (ja) 2006-01-26
JP2006024703A5 true JP2006024703A5 (cg-RX-API-DMAC10.html) 2007-08-16

Family

ID=35797770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004200887A Pending JP2006024703A (ja) 2004-07-07 2004-07-07 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP2006024703A (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4601391B2 (ja) * 2004-10-28 2010-12-22 シャープ株式会社 窒化物半導体素子およびその製造方法
US7646798B2 (en) 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
US7773650B2 (en) 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
US7764722B2 (en) 2007-02-26 2010-07-27 Nichia Corporation Nitride semiconductor laser element
US7804872B2 (en) 2007-06-07 2010-09-28 Nichia Corporation Nitride semiconductor laser element
US7701995B2 (en) 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
JP5223552B2 (ja) 2008-05-02 2013-06-26 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
KR101628233B1 (ko) * 2010-07-08 2016-06-08 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
JP5510212B2 (ja) 2010-09-08 2014-06-04 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法

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