JP2006013462A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP2006013462A
JP2006013462A JP2005147106A JP2005147106A JP2006013462A JP 2006013462 A JP2006013462 A JP 2006013462A JP 2005147106 A JP2005147106 A JP 2005147106A JP 2005147106 A JP2005147106 A JP 2005147106A JP 2006013462 A JP2006013462 A JP 2006013462A
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Prior art keywords
substrate
photoelectric conversion
thin film
film transistor
conversion element
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JP2005147106A
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English (en)
Japanese (ja)
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JP2006013462A5 (enrdf_load_stackoverflow
Inventor
Kazuo Nishi
和夫 西
Junya Maruyama
純矢 丸山
Naoto Kusumoto
直人 楠本
Hirosuke Sugawara
裕輔 菅原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005147106A priority Critical patent/JP2006013462A/ja
Publication of JP2006013462A publication Critical patent/JP2006013462A/ja
Publication of JP2006013462A5 publication Critical patent/JP2006013462A5/ja
Withdrawn legal-status Critical Current

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JP2005147106A 2004-05-21 2005-05-19 半導体装置及びその作製方法 Withdrawn JP2006013462A (ja)

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JP2005147106A JP2006013462A (ja) 2004-05-21 2005-05-19 半導体装置及びその作製方法

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JP2004152160 2004-05-21
JP2005147106A JP2006013462A (ja) 2004-05-21 2005-05-19 半導体装置及びその作製方法

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JP2013234905A Division JP5784096B2 (ja) 2004-05-21 2013-11-13 半導体装置の作製方法

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JP2006013462A true JP2006013462A (ja) 2006-01-12
JP2006013462A5 JP2006013462A5 (enrdf_load_stackoverflow) 2008-06-19

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294414A (ja) * 2007-04-27 2008-12-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2009200104A (ja) * 2008-02-19 2009-09-03 Seiko Epson Corp 光電変換装置及び電気光学装置
WO2009119426A1 (ja) * 2008-03-26 2009-10-01 住友電気工業株式会社 光電変換モジュールおよびその組み立て方法ならびにそれを用いた光電対応情報処理機器
US8410473B2 (en) 2008-08-06 2013-04-02 Kabushiki Kaisha Toshiba Light emitting device
JP2014064024A (ja) * 2004-05-21 2014-04-10 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251517A (ja) * 1998-02-27 1999-09-17 Seiko Epson Corp ３次元デバイスの製造方法
JP2000022120A (ja) * 1998-04-27 2000-01-21 Sharp Corp 二次元画像検出器
JP2002064194A (ja) * 2000-06-08 2002-02-28 Shimadzu Corp 電磁波撮像装置およびその製造方法
JP2002162474A (ja) * 2000-11-27 2002-06-07 Sharp Corp 電磁波検出器およびその製造方法
JP2002217391A (ja) * 2001-01-23 2002-08-02 Seiko Epson Corp 積層体の製造方法及び半導体装置
JP2003023573A (ja) * 2001-07-11 2003-01-24 Asahi Kasei Corp ビジョンチップ
WO2003008999A2 (en) * 2001-07-18 2003-01-30 Koninklijke Philips Electronics Nv Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
JP2003046096A (ja) * 2001-04-18 2003-02-14 Matsushita Electric Ind Co Ltd 半導体モジュールとその製造方法および回路基板ならびに半導体装置
JP2004047975A (ja) * 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
WO2004019411A1 (ja) * 2002-08-09 2004-03-04 Hamamatsu Photonics K.K. フォトダイオードアレイ、その製造方法、及び放射線検出器

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251517A (ja) * 1998-02-27 1999-09-17 Seiko Epson Corp ３次元デバイスの製造方法
JP2000022120A (ja) * 1998-04-27 2000-01-21 Sharp Corp 二次元画像検出器
JP2002064194A (ja) * 2000-06-08 2002-02-28 Shimadzu Corp 電磁波撮像装置およびその製造方法
JP2002162474A (ja) * 2000-11-27 2002-06-07 Sharp Corp 電磁波検出器およびその製造方法
JP2002217391A (ja) * 2001-01-23 2002-08-02 Seiko Epson Corp 積層体の製造方法及び半導体装置
JP2003046096A (ja) * 2001-04-18 2003-02-14 Matsushita Electric Ind Co Ltd 半導体モジュールとその製造方法および回路基板ならびに半導体装置
JP2003023573A (ja) * 2001-07-11 2003-01-24 Asahi Kasei Corp ビジョンチップ
WO2003008999A2 (en) * 2001-07-18 2003-01-30 Koninklijke Philips Electronics Nv Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
JP2004047975A (ja) * 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
WO2004019411A1 (ja) * 2002-08-09 2004-03-04 Hamamatsu Photonics K.K. フォトダイオードアレイ、その製造方法、及び放射線検出器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014064024A (ja) * 2004-05-21 2014-04-10 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008294414A (ja) * 2007-04-27 2008-12-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2009200104A (ja) * 2008-02-19 2009-09-03 Seiko Epson Corp 光電変換装置及び電気光学装置
WO2009119426A1 (ja) * 2008-03-26 2009-10-01 住友電気工業株式会社 光電変換モジュールおよびその組み立て方法ならびにそれを用いた光電対応情報処理機器
US8235603B2 (en) 2008-03-26 2012-08-07 Sumitomo Electric Industries, Ltd. Optoelectric conversion module, method for assembling same, and optoelectric information processor using same
JP5327052B2 (ja) * 2008-03-26 2013-10-30 住友電気工業株式会社 光電変換モジュールおよびそれを用いた光電対応情報処理機器
US8410473B2 (en) 2008-08-06 2013-04-02 Kabushiki Kaisha Toshiba Light emitting device

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