JP2006010668A - Probe pin for semiconductor device inspection - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe pin for semiconductor device inspection which can realize low-cost manufacturing and a significant shortening of a processing period by preventing defects of soldering by residual resin at soldering of the probe pin to a probe card, and by not using an expensive insulated tube. <P>SOLUTION: The probe pin 10 consists of a probe rod 11 which the probe part is prepared at one end, a solder layer 13 subjected to coating on the outside of the probe rod 11, and an insulated resin layer 14 which the coating is carried out to the outside of the solder layer 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a probe pin for testing a semiconductor device for testing a defect of a terminal provided in a semiconductor device. In particular, when a probe pin is fixed to a probe card by soldering, the insulating resin is prevented from remaining on the probe card. Therefore, the present invention relates to a probe pin for testing a semiconductor device in which a solder layer is interposed between a probe rod and an insulating resin layer.

  In general, the interconnection between electronic components is roughly classified into a substantially permanent connection and an easily separable connection. An example of an almost permanent connection is solder bonding. When two electronic components are soldered, a solder removal step is required to separate these components. Such permanent connections are used for connections that do not require separation between electronic components.

  On the other hand, the easily separable connection is used for temporary connection between both terminals. As an example of such temporary connection between terminals, there is a probe pin provided in a probe card. This probe pin is used in a device such as a semiconductor device (DUT; Device Under Test) that is temporarily pressurized and connected to a terminal of another component. In order to press and connect the probe pin to the terminal of the electronic component, a certain minimum contact force is required. Therefore, since a certain amount of pressure is applied to the probe pin when connecting to the external terminal, frequent replacement of the probe pin is required.

  In the probe pin, not only a certain minimum contact force but also a diameter of a contact end portion to be pressure-connected to a terminal of an electronic component becomes a problem. In order to accurately connect the probe pin to each terminal of the recent high-density and highly integrated microcircuit, the diameter of the probe pin must be reduced. In order to test high-density electrical elements such as LSI (Large Scale IC) and VLSI (Very Large Scale IC) circuits, contact structures such as probe cards having such high-density fine probe pins are used. . Also, in order to probe the high density circuit terminals simultaneously, the adjacent probe pins must be insulated.

  FIG. 1 is a perspective view showing a conventional probe pin manufacturing process. As shown in FIG. 1, a conventional probe pin is manufactured by fitting an insulating tube 2 on a probe rod 1. The probe rod 1 is made of a material having excellent electrical conductivity, and the insulating tube 2 is a heat shrinkable tube, and is made of a polyimide resin having shape memory properties.

  In manufacturing a conventional probe pin, first, the probe rod 1 is fixed to a fixing means such as a jig, and the insulating tube 2 is fitted onto the fixed probe rod 1. Next, high heat such as hot air or hot water is applied to the insulating tube 2. The insulating tube 2 having the shape memory property contracts when high temperature heat is applied, and as a result, the insulating tube 2 comes into close contact with the probe rod 1. In manufacturing such a conventional probe pin, when fitting an insulating tube, an operator uses a lens or the like to manufacture the probe pin while magnifying the opening end of the insulating tube.

  As described above, probe pins have been reduced in diameter to probe high-density and highly-integrated circuit terminals due to recent circuit miniaturization. However, in the conventional probe pin manufacturing method, the insulating tube is manually searched. It has become difficult to fit the needle rod. Further, the conventional manufacturing method has a problem that the cost for manufacturing the insulating tube increases as the inner diameter of the insulating tube becomes smaller. Furthermore, in the conventional manufacturing method, in the step of soldering to fix the probe pin coated with the insulating resin to the probe card, the insulating resin residue remains at the soldering site by burning the insulating resin portion simultaneously, There was also a problem that normal soldering could not be performed.

  In view of the above problems, the present invention provides a probe pin for testing a semiconductor device that can perform normal soldering without forming a residual resin at a soldering site when soldering the probe pin to a probe card. The purpose is to do.

  Another object of the present invention is to provide a probe pin for inspecting a semiconductor device which can realize an inexpensive manufacturing cost without using an expensive insulating tube when soldering the probe pin to a probe card. is there.

  Still another object of the present invention is to provide a probe pin for inspecting a semiconductor device that eliminates the need to fit an insulating tube onto the probe pin and can significantly reduce the work process time.

  Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description and preferred embodiments described with reference to the accompanying drawings.

  As a feature of the present invention for achieving the above object, a probe pin for testing a semiconductor device according to the present invention includes a probe rod provided with a probe portion at one end, a solder layer coated on the probe rod, And an insulating resin layer coated on the outer periphery of the solder layer.

  The probe pin for testing a semiconductor device according to the present invention can maintain insulation between the probe pins corresponding to the respective semiconductor electrode terminals. Further, in the probe pin for testing a semiconductor device according to the present invention, when the probe pin is soldered to the probe card, the resin does not remain in the soldered portion, and the soldering process can be facilitated. In addition, since the present invention does not use an expensive insulating tube, it is possible to manufacture a product at a lower cost, and it is not necessary to fit each insulating tube to the probe pin, thereby greatly reducing the work process time. Can be planned. Furthermore, in the present invention, it is possible to facilitate identification of probe pins that require frequent replacement.

  Embodiments of a semiconductor device inspection probe pin according to the present invention will be described below in detail with reference to the accompanying drawings.

  FIG. 2 is a perspective view showing a semiconductor device inspection probe pin according to the first embodiment of the present invention. As shown in FIG. 2, in the probe pin 10 according to the first embodiment of the present invention, the outer periphery of the probe rod 11 is coated with a solder layer 13 made of tin, wax, lead-free solder, or the like. An insulating resin layer 14 is coated on the outer periphery.

  One end of the probe rod 11 is provided with a tapered portion T which is a region where the diameter gradually decreases. The angle of the taper portion T is adjusted by the electropolishing rate difference by adjusting the difference in the amount of current flowing in each part of the probe rod 11 by impregnating the probe rod 11 in the electrolyte. The tapered portion T can be manufactured by electropolishing and can be manufactured by exposing and etching a mask corresponding to the shape to be manufactured. In the etching process, the tapered portion T is manufactured by rotating the probe rod 11 and exposing it through an acute angle mask. Since the diameter of the tapered portion T is very small, the probe rod 11 is desirably manufactured using a material having a predetermined elasticity so that it does not break during pressurization in the probe process. Therefore, it is desirable that the probe rod 11 provided with the tapered portion T is made of a material such as tungsten or rhenium having high conductivity and predetermined elasticity.

  Since the other part of the probe rod 11 except the part for performing the probe needs to be insulated, the coating part C is provided. The coating portion C is coated with a solder layer 13 made of a solder material such as tin or wax or a lead-free solder material for reducing contamination. In order to coat the solder layer 13 smoothly, a flux solution is applied to the probe rod 11 as a pretreatment step for soldering. Then, the solder layer 13 is coated on the probe rod 11 coated with a flux solution. The plurality of probe rods 11 are fixed to a jig at a certain depth, and are impregnated with a solution of a solder material heated and kept at a high temperature for a predetermined time. Thereafter, the solder material solution coated on the probe rod 11 is dried and cured to form a solder layer 13.

  The insulating resin layer 14 is coated on the solder layer 13 so as to cover the solder layer 13 formed on the probe rod 11. Before the insulating resin layer 14 is coated on the solder layer 13, the solder layer 13 is washed to remove residual foreign matters. The insulating resin layer 14 is coated by impregnating the probe rod 11 with a resin solution maintained at a high temperature by heating after the solder layer 13 is washed. The coated insulating resin layer 14 is cured by drying for 10 to 20 minutes in a drying chamber maintained at a temperature of about 200 ° C. In order to accurately adjust the thickness of the resin coating to a predetermined thickness and strengthen the coating film, the insulating resin that has been primarily coated is secondarily coated with the insulating resin in the same manner as the primary coating. You can also.

  FIG. 3 is a perspective view showing a probe pin for testing a semiconductor device according to the second embodiment of the present invention. As shown in FIG. 3, in the probe pin 20 according to the second embodiment of the present invention, a nickel plating layer 22 is formed on the outer periphery of the probe rod 21, and a solder layer 23 is coated on the nickel plating layer 22. Then, the insulating resin layer 24 is coated on the solder layer 23, and the color layer 26 is formed on the insulating resin layer 24.

  A nickel plating layer 22 is formed on the outer periphery of the probe rod 21 by electrolytic electrodeposition. Nickel is a material having heat resistance, corrosion resistance, and chemical resistance. When the probe pin 20 comes into contact with the semiconductor terminal, a current flows and heat is generated, but the nickel plated layer 22 gives the probe pin 20 heat resistance so that the probe pin 20 does not corrode even when used for a long time. Further, since the nickel plating layer 22 has chemical resistance, the probe rod 21 is prevented from being damaged by the solder material when the solder layer 23 is formed on the nickel plating layer 22.

  The solder layer 23 and the insulating resin layer 24 are manufactured by the same method as in the first embodiment. Accordingly, the solder layer 23 is formed by using tin, wax, or a lead-free solder material, impregnating the probe rod 21 with a solder material solution heated to a predetermined temperature, and then drying and curing. The insulating resin layer 24 is formed by impregnating the probe rod 21 on which the solder layer 23 is formed with a resin solution heated to a predetermined temperature, followed by drying and curing.

  A predetermined color is selected for the color layer 26 coated on the outer layer of the insulating resin layer 24, and the plurality of probe pins 20 can be identified. That is, according to the type of terminal connected to the probe card (see FIG. 5), a different color is selected to identify the probe pin 20 corresponding to the terminal. The color layer 26 is manufactured using an acrylic material or a ceramic material that can maintain long-term peeling resistance so that the type of the probe pin 20 can be identified for a long time. The color layer 26 is formed by applying materials having different colors or by coating the material as a layer. Further, the color layer 26 can be replaced by adding an acrylic or ceramic material solution having a color to the insulating resin solution and coloring the insulating resin layer 24.

  The probe pin 20 manufactured according to the second embodiment of the present invention has a probe rod 21, a nickel plating layer 22, a solder layer 23, an insulating resin layer 24, and a color layer 26, and is about 0.005 mm. Have a radius of.

  FIG. 4 is a perspective view showing a probe pin for testing a semiconductor device according to a third embodiment of the present invention. As shown in FIG. 4, in the probe pin 30 according to the third embodiment of the present invention, a nickel plating layer 32 is formed on the outer periphery of the probe rod 31, and a solder layer 33 is coated on the nickel plating layer 32. An insulating resin layer 34 is coated on the layer 33. A color band 36 is provided on a part of the insulating resin layer 34.

  The probe pin 30 according to the third embodiment of the present invention is manufactured by substantially the same manufacturing method as the probe pin 20 according to the second embodiment. Therefore, the nickel plating layer 32 is formed on the outer periphery of the probe rod 31 by electrolytic electrodeposition. The solder layer 33 is made of a material such as tin or wax or a lead-free solder material, and is formed by impregnating the probe rod 31 with a solder material solution heated at a predetermined temperature. The insulating resin layer 34 is formed by impregnating the probe rod 31 on which the solder layer 33 is formed with a resin solution heated at a predetermined temperature.

  A color band 36 is formed on a part of the insulating resin layer 34 of the probe pin 30. The color band 36 is manufactured using an acrylic material, a ceramic material, or the like so as not to peel for a long time. The color band 36 is a color applied to a part of the insulating resin layer 34.

  FIG. 5 is a perspective view showing a probe card to which a probe pin for testing a semiconductor device according to the present invention is fixed. As shown in FIG. 5, the probe card 40 is formed in a four-layered circle so as to probe many terminals simultaneously. The probe card 40 can be formed in an arbitrary plurality of layers such as two layers and three layers, and can be formed in an arbitrary shape such as a rectangle.

  A plurality of probe pins 42, 44, 46, 48 are arranged between the four layers of the probe card 40. The plurality of probe pins 42, 44, 46, 48 include a first probe pin group 42, a second probe pin group 44, a third probe pin group 46, and a fourth probe, each group being displayed in a different color. A pin group 48 is used. The first probe pin group 42 is fixed to the first soldering portion 41 having the minimum radius by soldering, and the second probe pin group 44 is soldered to the second soldering portion 43 having the next largest radius after the minimum radius. The third probe pin group 46 is fixed by soldering to a third soldering portion 45 having a radius next to the radius to which the second probe pin group 44 is fixed, and the fourth probe pin group 48 is fixed. Is fixed to the fourth soldering portion 47 having the maximum radius by soldering.

  The plurality of probe pins 42, 44, 46, 48 are fixed by a pin fixing body 52. The pin fixing body 52 is provided with holes through which the probe pins 42, 44, 46 and 48 can be inserted. Thus, after the plurality of probe pins 42, 44, 46, 48 are inserted into the corresponding holes of the pin fixing body 52, the pin fixing body 52 is coated with epoxy around the probe pin insertion holes. To be completely fixed.

  Inside the pin fixing body 52, a semiconductor corresponding plate 54 is installed. The semiconductor corresponding plate 54 has a shape corresponding to the semiconductor to be probed. Generally, when the semiconductor to be probed is a non-memory semiconductor, since the terminals are provided around the four sides of the quadrangle, the probe pins are fixed in the holes provided on the four sides of the pin fixing body 52. On the other hand, when the semiconductor to be probed is a memory semiconductor, since the terminals are provided on both long sides of the rectangle, the semiconductor corresponding plate 54 is formed in an elongated rectangular shape, and the holes provided on both long sides. The probe pin is fixed to. The plurality of probe portions 49 of the probe pins 42, 44, 46, 48 fixed to the pin fixing body 52 are arranged at predetermined intervals so as to correspond to the terminals of the electric element to be probed.

  On the back surface (not shown) of the probe card 40, a plurality of terminals (not shown) and conductive wires (not shown) connected to the soldering portions 41, 43, 45, 47 are provided. Such a plurality of terminals and conductors are connected to meter reading means (not shown) for metering the current flow, and the conduction state of the semiconductor element is tested. In the probe card 40, the probe pins constituting each probe pin group arranged every 90 ° have the same length, but each probe pin group is separated from probe pins having four different lengths. It is also possible to configure.

  The probe pins 10, 20, 30 manufactured according to the embodiments of the present invention are soldered to the soldering portions 41, 43, 45, 47 of the probe card 40 with a soldering iron in the range of 350 ° C. to 500 ° C. Although there is a possibility that the insulating resin layers 14, 24, 34 may partially burn depending on the temperature applied during soldering, the solder layers 13, 23, 33 formed inside the insulating resin layers 14, 24, 34 are The insulating resin portion coated on the solder layers 13, 23, 33 is completely removed by complete combustion. This is because the melting point of the solder layers 13, 23, 33 is lower than the melting point of the insulating resin layers 13, 24, 34.

In the second and third embodiments of the present invention, the probe pins are divided by the color layer 26 or the color band 36, and the probe pins that need to be frequently replaced by the applied pressure can be easily identified. This enables easy identification of the probe pins when soldering to a predetermined position of the probe card, and can shorten the working time.
Each of the above-described embodiments is merely a description of preferred embodiments of the present invention, and the present invention is not limited to these embodiments, and is within the technical idea and claims of the present invention. Various changes, modifications, or substitutions can be made by those skilled in the art, and it should be understood that these modifications are within the scope of the present invention.

It is a perspective view which shows the process of manufacturing the conventional probe pin. 1 is a perspective view showing a semiconductor device inspection probe pin according to a first embodiment of the present invention. FIG. It is a perspective view which shows the semiconductor device test | inspection probe pin which concerns on 2nd Example of this invention. It is a perspective view which shows the probe pin for semiconductor device inspection which concerns on 3rd Example of this invention. It is a perspective view which shows the probe card with which the probe pin for a semiconductor device inspection concerning this invention was fixed.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Probe pin 11 Probe rod 13 Solder layer 14 Insulating resin layer 20 Probe pin 21 Probe rod 22 Nickel plating layer 23 Solder layer 24 Insulating resin layer 26 Color layer 30 Probe pin 31 Probe rod 32 Nickel plating layer 33 Solder layer 34 Insulating resin layer 36 color belt

Claims (8)

A probe rod provided with a probe portion at one end;
A solder layer coated on the probe rod;
A probe pin for testing a semiconductor device, comprising an insulating resin layer coated on the solder layer.   2. The probe pin for testing a semiconductor device according to claim 1, wherein a nickel plated layer formed on the probe rod is provided between the probe rod and the solder layer.   The semiconductor device inspection probe pin according to claim 1, wherein a color layer is formed on the insulating resin layer in order to identify the semiconductor device inspection probe pin.   The semiconductor device inspection probe pin according to claim 1, wherein a color band is formed on a part of the insulating resin layer in order to identify the semiconductor device inspection probe pin.   2. The probe pin for testing a semiconductor device according to claim 1, wherein the probe rod contains at least one material of tungsten and rhenium.   2. The probe pin for testing a semiconductor device according to claim 1, wherein the solder layer contains at least one material of tin and wax.   2. The probe pin for testing a semiconductor device according to claim 1, wherein the solder layer is made of a lead-free solder material. 2. The probe pin for testing a semiconductor device according to claim 1, wherein the probe portion formed on the probe rod is composed of a tapered portion having a predetermined taper angle formed by electropolishing.

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