JP2006008889A - Nitride phosphor, method for producing the same, white light-emitting element and pigment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a nitride phosphor having a light-emitting peak wavelength at ≥650 nm, especially at 660-690 nm, having a red emitted light color and a high light-emitting intensity, a method for producing the nitride phosphor, a white light-emitting element and a pigment. <P>SOLUTION: This nitride phosphor has a chemical composition expressed by general formula (1): Mg<SB>m-x</SB>Eu<SB>x</SB>Si<SB>9</SB>Al<SB>y</SB>N<SB>(12+2/3m+y)</SB>[wherein, 0<m≤5.0, 0<x/m<0.5, 0≤y≤3.0]. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a red light-emitting nitride phosphor having a light emission peak in a long wavelength region of 650 nm or more (particularly from 660 to 690 nm) and a high light emission intensity, a method for producing the nitride phosphor, a white light-emitting element, and a pigment.

  Currently, red phosphors having an emission peak in a long wavelength region of 600 nm or more are practically used as sulfide-based or oxide-based phosphors, and oxide-based three-wavelength fluorescent lamps. There are europium (Eu) activated yttrium oxide phosphors and the like used in the above. However, the emission peak wavelength of these red phosphors is 650 nm or less, and there are few that show strong emission intensity at wavelengths longer than this.

In addition, many nitride-based phosphors absorb ultraviolet to blue light and exhibit a relatively long-wavelength yellow to yellow-red fluorescent color, and have recently attracted attention as phosphors suitable for white light-emitting elements. ing. The white light emitting element converts a part of light emitted from a blue semiconductor light emitting element (blue LED) such as a GaN system with a photoluminescence phosphor, and converts the wavelength of the blue LED light into the wavelength converted light (mainly a yellow light emitting element). It is a light emitting element that emits a light emission color different from that of LED light, particularly white light, by mixing with light. Since such a light emitting element is small and has high power efficiency, it is used as various light sources such as a signal lamp, an in-vehicle illumination, a liquid crystal backlight, and a display board such as a station destination guide plate. As a photoluminescence phosphor used in a white light emitting element in combination with a blue LED, an yttrium / aluminum / garnet phosphor activated with cerium (Ce) (hereinafter referred to as “YAG phosphor”). However, nitride-based phosphors that emit yellow to yellow-red are expected as photoluminescent phosphors for white light-emitting elements that replace YAG-based phosphors.
On the other hand, the light emitted from the YAG phosphor is yellow-green to yellow, and the light emission color of the white light-emitting element is slightly bluish-white, which is good for simple lighting but requires high color rendering properties. In addition, when used as a backlight of a color liquid crystal display (LCD), the output light has a short red component. For this reason, it has also been proposed to use the nitride phosphor together with the YAG phosphor in order to correct the emission color, that is, to supplement the red component.

Examples of such nitride-based red light-emitting phosphors include calcium (Ca) -α-sialon-based phosphors (see Patent Document 1), and nitridosilicates activated with Eu, such as Ca ₂ Si ₅ N _8. Sr ₂ Si ₅ N ₈ , Ba ₂ Si ₅ N ₈ , Ba ₂ Si ₇ N ₁₀ , Ba _2−x Eu _x Si ₅ N ₈ type phosphors (see Patent Documents 2 and 3).
JP 2002-363554 A Special table 2003-515655 gazette Special table 2003-515665 gazette

However, the Ca-α-sialon-based phosphor described in Patent Document 1 has an emission peak wavelength of 500 to 600 nm, and even in the nitridosilicates described in Patent Documents 2 and 3, the emission peak wavelength is high. Few practical phosphors have wavelengths longer than 650 nm.
The present invention has been made in view of the above circumstances, and has a peak emission wavelength at 650 nm or more, particularly 660 to 690 nm, and the emission color is red. It aims at providing a manufacturing method, a white light emitting element, and a pigment.

In order to solve the above problems, the nitride phosphor of the invention described in claim 1 has a chemical composition represented by the following general formula (1).
_{Mg mx Eu x Si 9 Al y} N (12 + 2 / 3m + y) ... (1)
(However, in the general formula (1), 0 <m ≦ 5.0, 0 <x / m <0.5, and 0 ≦ y ≦ 3.0.)

The invention according to claim 2 is a method for producing the nitride phosphor according to claim 1,
A compound of a metal element other than silicon constituting the nitride and silicon nitride are dissolved or dispersed in molten urea and / or a molten urea derivative to form a nitride precursor, and the nitride precursor is A nitride phosphor is produced by heating in an inert or reducing atmosphere.

  The white light-emitting device according to claim 3 is a semiconductor light-emitting device that emits blue light, and a phosphor that emits fluorescence in the green to yellow wavelength region by absorbing part of the light from the semiconductor light-emitting device. And the nitride phosphor according to claim 1.

  The white light-emitting device according to claim 4 is a semiconductor light-emitting device that emits light in the ultraviolet to blue-violet region, and a phosphor that absorbs light from the semiconductor light-emitting device and emits blue fluorescence, or It is characterized by comprising at least one of phosphors emitting green fluorescence and the nitride phosphor according to claim 1.

The pigment of the invention described in claim 5 has a chemical composition represented by the following general formula (1).
_{Mg mx Eu x Si 9 Al y} N (12 + 2 / 3m + y) ... (1)
(However, in the general formula (1), 0 <m ≦ 5.0, 0 <x / m <0.5, and 0 ≦ y ≦ 3.0.)

The nitride phosphor according to the present invention has an emission peak wavelength in the long wavelength region of 660 to 690 nm, which has not been particularly practical, and has a high emission intensity. Further, it emits light by being excited by light in a wide wavelength region from the ultraviolet region to the yellow-green light region, and also by an electron beam or an electric field. Therefore, it is useful as a phosphor used for ordinary illumination, various display tubes, white LEDs, and the like. Moreover, most of the object colors are yellowish red, and can be applied to various uses as pigments not containing heavy metals.
Furthermore, according to the method for producing a nitride phosphor according to the present invention, a nitride precursor having a uniform composition can be formed by dissolving or dispersing each raw material in molten urea and / or a molten urea derivative. it can. Then, by heating such a nitride precursor in an inert or reducing atmosphere, a nitride phosphor having excellent characteristics and crystallinity with a uniform particle diameter can be obtained. Furthermore, since nitriding of raw materials and crystal growth can be performed in the same reaction vessel, they can be efficiently manufactured by a simple process, and can be manufactured at normal pressure and at a relatively low temperature.

Hereinafter, the nitride phosphor according to the present invention, a white light-emitting element or pigment as an application, and a method for producing the nitride phosphor will be described in detail.
(Nitride phosphor)
The nitride phosphor according to the present invention has a chemical composition represented by the following general formula (1).
_{Mg mx Eu x Si 9 Al y} N (12 + 2 / 3m + y) ... (1)
(However, in the general formula (1), 0 <m ≦ 5.0, 0 <x / m <0.5, and 0 ≦ y ≦ 3.0.)

In the general formula (1), the range of m is preferably 1.0 ≦ m ≦ 4.0.
The present invention is characterized by having deep red light emission by doping an activator Eu serving as a light emission center into a silicon nitride matrix in which magnesium nitride having a strong covalent bond is dissolved. The emission intensity varies depending on the amount of Eu doped. Particularly, the x / m range is preferably 0.1 ≦ x / m ≦ 0.4 because the emission intensity is large. The emission intensity becomes maximum near x / m = 0.2.

In the nitride phosphor of the present invention, it is not essential to contain aluminum (Al), but it is considered that the structure is stabilized by containing Al. However, since the emission intensity decreases conversely as the Al content increases, y needs to be 3.0 or less. The value of y is preferably 0 <y ≦ 2.0, and particularly preferably in the range of 0.1 ≦ y ≦ 1.5.
The nitride phosphor of the present invention is not an oxynitride containing a controlled amount of oxygen, but does not exclude a nitride containing a small amount of oxygen that inevitably enters.

  The nitride phosphor of the present invention includes an element that acts as a coactivator such as a rare earth metal element, such as cerium (Ce), terbium (Tb), in order to adjust emission intensity, afterglow, and other fluorescence characteristics. ), Dysprodium (Dy), samarium (Sm), praseodymium (Pr), neodymium (Nd), erbium (Er), holmium (Ho), thulium (Tm), manganese (Mn), etc. may be appropriately doped. .

The nitride phosphor according to the present invention emits fluorescence having an emission peak wavelength in the range of 650 nm or more, particularly 660 nm to 690 nm, which has not been conventionally present, when excited by light, electron beam, or electric field in the ultraviolet to yellow-green light region. Long-wavelength red light emitting phosphor.
Such nitride phosphors can be used as long-wavelength red phosphors, which have not been so practical in the past, as illumination phosphors such as lamps, cold cathode tubes, CRTs, PDPs, FEDs, It can be used as a red phosphor for display tubes such as inorganic EL.

Further, it is excited by ultraviolet light and visible light in a purple to yellow-green wavelength region, and these light can be converted into light having a longer wavelength, so that it is very effective for producing a white light emitting element.
Specifically, the blue LED absorbs part of the blue light from the LED, converts the wavelength and emits green to yellow light, and the nitride of the present invention as the second phosphor. By combining with a phosphor, a white light emitting device with excellent color balance can be obtained.
For example, a white light emitting device including a GaN-based or InGaN-based blue LED having a light emission peak wavelength of 400 nm to 460 nm and a YAG phosphor that emits yellow-green to yellow light when excited by blue light is used. The color rendering property and color sensitivity can be improved by adding the nitride phosphor of the present invention for the red component complementary color.
In addition, by combining the blue LED, the first phosphor that emits green light with the blue light, and the red light emitting nitride phosphor of the present invention, white light emission by mixing three primary colors of blue, green, and red light. An element can also be obtained.
Moreover, instead of blue LED, for example, a semiconductor element (ultraviolet LED) that emits light in an ultraviolet to blue-violet region having a peak wavelength of 360 to 400 nm is used, and the emitted light is absorbed to emit red, green, or blue fluorescence. A light emitting device that emits white light by mixing these three primary colors in combination with a photoluminescent phosphor that emits light is also known, but the nitride phosphor of the present invention is used as a red component of such a white light emitting device. You can also.
Furthermore, as a phosphor combined with an ultraviolet LED, a blue LED, or an LED emitting blue-green to green, the nitride phosphor of the present invention is used alone, and various light sources such as white light, purple, magenta, pink, and red are used. A light-emitting element that emits colored light can also be obtained.

Furthermore, since most of the nitride phosphors of the present invention have a yellowish red color, as an alternative material for pigments containing heavy metals such as iron, copper, manganese, and chromium such as bengara (iron oxide), paint and Applicable to ink and the like. It can also be used as a yellow-red pigment that emits deep red light using ultraviolet light or visible light as an excitation source, for phosphor toning and cosmetics, and as a pigment for anti-counterfeiting ink such as banknotes and securities. Is possible.
Furthermore, it can be used for a wide range of applications as an ultraviolet and visible light absorbing material.

(Nitride phosphor manufacturing method)
Next, a method for producing a nitride phosphor according to the present invention will be described.
As the method for producing a nitride phosphor according to the present invention, a known solid phase reaction method, spray pyrolysis method, liquid phase reaction method, and other methods can be applied, but the urea precursor shown below is used. Is preferable because it is easy to obtain a nitride having a uniform composition and a good crystallinity with a uniform particle diameter. Furthermore, this method is preferable in that the raw material can be nitrided and grown in the same reaction vessel, and can be produced at normal pressure and at a relatively low temperature.
Hereinafter, an example of the method using the urea precursor suitably used in the present invention will be described. First, urea and / or a urea derivative (hereinafter sometimes referred to as “urea or the like”) is heated to a temperature equal to or higher than these melting points to be in a molten state. However, if the heating temperature is too high, another product may be formed. Therefore, urea or the like is dissolved, and the molten state is kept for a predetermined time after adding the Mg compound, Eu compound, Al compound, or silicon nitride described later. It is preferable that the temperature is such that it can be maintained. For example, when urea is used, its melting point is 132 ° C., so it is sufficient to heat it to a slightly higher temperature.

  As the urea derivative, various compounds such as urea compounds as carbamate compounds, urea complex compounds, and urea adduct compounds can be used as substitutes of various organic groups for nitrogen atoms in urea. As urea or the like, urea is preferably used from the viewpoints of availability, ease of handling, and the like.

  Next, Mg compounds, Eu compounds, and Al compounds, which are constituents of the final product, are dissolved in molten urea or the like, and silicon nitride is dispersed to form a nitride precursor. The Al compound may be added according to the composition of the target nitride phosphor, and is not necessarily essential. When the coactivator is doped, a predetermined amount of a metal element compound acting as a coactivator is added and dissolved.

  Compounds of metal elements other than silicon constituting the nitride, that is, Mg compounds, Eu compounds, Al compounds, and compounds of coactivator elements are not particularly limited as long as they can be dissolved in molten urea or the like. For example, chlorides, nitrates and the like can be mentioned. As silicon nitride, either crystalline or amorphous silicon can be used as appropriate. For example, amorphous silicon nitride is considered preferable in terms of reactivity, but crystalline silicon nitride is advantageous in terms of easy availability, easy handling, and yield. is there.

The nitride precursor thus obtained is allowed to cool, for example, and dried to form a solid. This solid material is mechanically pulverized as necessary, and heated using a heating furnace to produce a nitride. As a heating furnace, well-known things, such as a batch furnace, a belt furnace, a tubular furnace, a rotary kiln, can be used.
However, it is necessary to perform heating under an inert atmosphere or a reducing atmosphere.
Further, the target product may be formed by one-step heating (firing) in an inert atmosphere or a reducing atmosphere, or the target nitride is obtained by heating (firing) in multiple stages. Also good. Various conditions such as the heating temperature and the heating time may be appropriately set according to the type of the target product. For example, in the case of one-stage heating, the temperature is in the range of 1200 to 1800 ° C. and 0.5. About 12 hours are preferable. In the case of two-stage heating, it is desirable to set the second stage heating temperature higher than the first stage heating temperature. For example, the first stage heating is performed at about 300 to 1000 ° C. It is desirable that the temperature is 0.5 to 4 hours, and the second stage heating is preferably performed at a temperature of about 1200 to 1800 ° C. for about 0.5 to 12 hours. Multi-stage heating is advantageous in that a product with a more uniform composition can be obtained with good reproducibility.

  Further, as other heating means, the precursor powder is mechanically pulverized, desirably adjusted in particle size, and then heated in a dispersed state in the gas phase, thereby producing a fine and uniform particle size crystalline material. High nitride powder can be obtained.

Furthermore, a spray pyrolysis method may be used as another heating means. In this spray pyrolysis method, the liquid precursor is made into fine droplets using an atomizer such as an ultrasonic type or a two-fluid nozzle type or other atomizing means, and this is subjected to an inert atmosphere or a reducing atmosphere condition. Under heating, the precursor can be decomposed and reacted to obtain fine and uniform nitride powder.
In the above production example, the method of dissolving or dispersing each compound etc. in the molten urea etc. has been described, but the urea etc. and the compound etc. are mixed in advance and then heated to melt the urea etc. It doesn't matter.

EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated concretely, the embodiment of this invention is not limited to this.
Samples 1-5 were prepared according to the following method, and then the following measurements were performed for each sample 1-5 and evaluated.
[Preparation of Sample 1]
Urea was melted at 134 ° C. to obtain molten urea. In 36 g of this molten urea, 0.31 g of EuCl ₃ .6H ₂ O, 0.35 g of AlCl ₃ .6H ₂ O and 2.2 g of MgCl ₂ .6H ₂ O are added and dissolved, and further 1.2 g of Si ₃ N ₄ powder (Ube Industries SN-E10) was added, stirred, and uniformly dispersed. This was air-cooled with stirring to produce a solid nitride precursor having an element molar ratio of Mg: Eu: Si: Al = 3.7: 0.3: 9: 0.5. The obtained precursor was placed on a carbon boat with a lid, fired in an N ₂ atmosphere containing 4% H ₂ at 800 ° C. for 2 hours, and then pulverized. This was sandwiched between Mo plates and heated at 1600 ° C. for 2 hours in an N ₂ atmosphere containing 4% of H ₂ to produce a nitride phosphor.

[Preparation of Samples 2 to 5]
In the preparation of Sample 1, samples 2 to 5 having chemical compositions shown in Table 1 were obtained in the same manner as Sample 1 by appropriately changing the molar ratio of the raw materials. Sample 5 is outside the present invention.

≪Appearance≫
The appearance of the obtained phosphor powders of Samples 1 to 5 was observed, and the object colors are shown in Table 1.

≪Crystal structure≫
About each sample 1-5, the X-ray-diffraction pattern was measured using Cu-K alpha ray as an X-ray source using the Rigaku Co., Ltd. powder X-ray diffractometer, and the crystal structure was confirmed. The results are shown in Table 1. It was confirmed that all had an orthorhombic crystal structure. FIG. 1 shows the X-ray diffraction pattern of Sample 2.

≪Fluorescence characteristics≫
About each sample 1-5, the emission spectrum was measured in the range of 500 nm to 800 nm using monochromatic light of 460 nm as an excitation light source using a spectrofluorometer (FP-6600 type) manufactured by JASCO Corporation. The excitation spectrum at each emission peak wavelength was measured in the range of 250 nm to 640 nm. The emission peak wavelength and emission intensity of each sample are also shown in Table 1. The emission intensity is a relative intensity when the sample 2 is 100. FIG. 2 shows a fluorescence spectrum diagram of Sample 2. In the figure, (a) is an emission spectrum, and (b) is an excitation spectrum.

2 is an X-ray diffraction pattern of Sample 2. It is a fluorescence spectrum of sample 2.

Claims (5)

A nitride phosphor having a chemical composition represented by the following general formula (1).
_{Mg mx Eu x Si 9 Al y} N (12 + 2 / 3m + y) ... (1)
(However, in the general formula (1), 0 <m ≦ 5.0, 0 <x / m <0.5, and 0 ≦ y ≦ 3.0.)   A method for producing the nitride phosphor according to claim 1, wherein a compound of a metal element other than silicon constituting the nitride and silicon nitride are dissolved in molten urea and / or a molten urea derivative. A nitride phosphor is produced by dispersing to form a nitride precursor, and heating the nitride precursor in an inert or reducing atmosphere. .   A semiconductor light emitting device that emits blue light, a phosphor that absorbs part of the light from the semiconductor light emitting device and emits fluorescence in the green to yellow wavelength region, and the nitride phosphor according to claim 1. A white light emitting element comprising:   A semiconductor light emitting device that emits light in the ultraviolet to blue-violet region, and at least one of a phosphor that emits blue fluorescence by absorbing light from the semiconductor light emitting device, or a phosphor that emits green fluorescence, A white light emitting device comprising the nitride phosphor according to claim 1. A pigment having a chemical composition represented by the following general formula (1).
_{Mg mx Eu x Si 9 Al y} N (12 + 2 / 3m + y) ... (1)
(However, in the general formula (1), 0 <m ≦ 5.0, 0 <x / m <0.5, and 0 ≦ y ≦ 3.0.)

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