JP2006005150A - Imaging device and radiographic imaging device and radiographic imaging system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly sensitivity or high speed drivable radiographic imaging device that can fully reduce the array pitch of a semiconductor conversion element for electrode pitch, for connection with external circuits or ICs. <P>SOLUTION: A selection switch, for selecting an arbitrary wiring from among a wiring group constituted of gate wiring or signal wiring, is arranged on a substrate 101. The selection switch has the same layer constitution as the TFT of a pixel or a semiconductor conversion element. Thus, array pitch of the semiconductor conversion element for electrode pitch can be satisfactorily reduced for connection with external circuits or ICs. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an imaging apparatus, a radiation imaging apparatus, and a radiation imaging system having a thin film transistor (TFT) and a semiconductor conversion element.

  In recent years, TFT matrix panels in which TFTs are formed on an insulating substrate have been rapidly increased in size and driving speed. A manufacturing technique of a liquid crystal panel using a TFT (thin film transistor) is used for an area sensor (for example, a radiation imaging apparatus) having a semiconductor conversion element that converts radiation such as X-rays into an electric signal. As such a semiconductor conversion element, for example, a wavelength conversion layer (for example, a phosphor layer) for wavelength conversion from radiation such as X-rays to light such as visible light is disposed on the surface, and photoelectric conversion of this light, Some use a semiconductor conversion material that performs direct photoelectric conversion.

  Such a semiconductor conversion element and a TFT for reading out an electrical signal from the semiconductor conversion element are arranged in a two-dimensional manner to read the radiation dose, so that the resolution is increased by reducing the pixel pitch and increasing the definition. It is possible to provide an excellent medical radiation imaging apparatus having For this purpose, it is necessary to connect to an external circuit with a connection pad finely arranged to the same level as the semiconductor conversion element. However, in the semiconductor process for forming the semiconductor conversion element, the wiring arrangement pitch can be set to several microns, and the semiconductor conversion element arrangement pitch can be reduced as well. Technology can only connect up to an array pitch of tens of microns.

Therefore, for example, as described in JP-A-8-116044, there is one in which the arrangement pitch of the connection portions is sufficiently larger than the arrangement pitch of the semiconductor conversion elements. (See Patent Document 1). According to the publication, for example, by taking out even-numbered wirings from the left side and odd-numbered wirings from the right side, the semiconductor conversion element reduces the wire bonding density and improves the yield. As a result, the arrangement pitch of the connection pads can be made larger than the arrangement pitch of the semiconductor conversion elements, which not only improves the yield, but also reduces the arrangement pitch of the semiconductor conversion elements without worrying about the arrangement pitch of the connection pads. Is possible.
JP-A-8-116044 (paragraphs 0133 to 0144)

  In the method of Patent Document 1, for example, the number of connections by wire bonding cannot be reduced, and for example, the number of ICs to be connected cannot be reduced. In addition, when even-numbered rows are taken out from the left side and odd-numbered rows are taken out from the right side, for example, components such as connection pads, ICs packaged in flexible wiring and flexible wiring, and circuit boards are mounted on the left and right. The effective area of the imaging apparatus can be arranged only inside the apparatus, and a configuration in which effective pixels are arranged at the limit of the apparatus like a radiation imaging apparatus for mammography examination cannot be achieved.

  In addition, for example, in an ultra-sensitive low noise sensor or a device intended for high-speed driving, the signal wiring length and the gate wiring length become long, so that the parasitic capacitance and the intersection capacitance become large, resulting in a disadvantageous sensor configuration. End up.

  FIG. 10 is an image diagram showing a planar configuration disclosed in Patent Document 1. In FIG. A gate driver IC that drives the gate wiring is connected to L and R, and a signal processing circuit IC that processes charges from the signal wiring is arranged to U and D.

  As for the gate wiring, odd-numbered wirings g1, g3, g5,..., G1999 are connected to the IC on the L side, and even-numbered wirings g2, g4, g6,. .., Sig1999 are connected to the U-side IC, and even-numbered wirings Sig2, Sig4, Sig6,..., Sig2000 are connected to the D-side IC.

  As can be seen from FIG. 10, in such a configuration, it is possible to sufficiently increase the electrode pitch for IC connection, for example, wire bonding, with respect to the pixel pitch. The area where the IC is arranged becomes large, and effective pixels cannot be arranged near the outer periphery of the substrate, for example, about 1 mm from the edge of the substrate.

  In order to solve the above problems, an imaging device according to the present invention includes a pixel including a semiconductor conversion element that converts an incident electromagnetic wave into an electric signal and a first thin film transistor for reading a signal of the semiconductor conversion element on a substrate. A plurality of pixels arranged in a direction different from the one direction, and gate wirings that are two-dimensionally arranged on the substrate and commonly connected to the gate electrodes of the first thin film transistors of the plurality of pixels arranged in one direction. A signal wiring to which a source electrode or a drain electrode of the first thin film transistor is commonly connected, and a specific wiring is selected from a wiring group including a plurality of the gate wirings or the signal wirings on the substrate. A selection switch is arranged.

  A radiation imaging apparatus according to the present invention includes the imaging apparatus described above, wherein the semiconductor conversion element of the imaging apparatus is a photoelectric conversion element, the electromagnetic wave is radiation, and radiation is applied on the photoelectric conversion element. It has a wavelength conversion layer that converts light into a wavelength region that can be photoelectrically converted by the conversion element.

  The radiation imaging apparatus of the present invention includes the imaging apparatus, wherein the semiconductor conversion element of the imaging apparatus is an element that directly photoelectrically converts radiation, and the electromagnetic wave is radiation.

  The radiation imaging system of the present invention includes the radiation imaging apparatus, a signal processing means for processing a signal from the radiation imaging apparatus, a recording means for recording a signal from the signal processing means, and the signal processing. It comprises a display means for displaying a signal from the means, a transmission processing means for transmitting a signal from the signal processing means, and a radiation source for generating the radiation.

  In the present invention, the arrangement switch of the semiconductor conversion element is arranged with respect to the electrode pitch for connection to an external circuit or IC by arranging a selection switch capable of selecting an arbitrary wiring from a wiring group consisting of gate wiring or signal wiring. Can be made sufficiently small. In addition, it is possible to provide a radiation imaging apparatus capable of high sensitivity or high speed driving by selecting and sequentially reading out a plurality or all of the wirings from each wiring group.

  In the present invention, electromagnetic waves refer to those in the wavelength region from light such as visible light and infrared light to radiation such as X-rays, α rays, β rays, and γ rays.

  According to the present invention, the arrangement pitch of the semiconductor conversion elements can be made sufficiently smaller than the electrode pitch for connection to an external circuit or IC. It is also possible to provide a radiation imaging apparatus capable of high sensitivity or high speed driving.

  Next, the best mode for carrying out the invention will be specifically described with reference to the accompanying drawings. In the following embodiment, a case where a radiation imaging apparatus is configured will be described. However, the imaging apparatus of the present invention is not limited to a radiation imaging apparatus that converts radiation into an electrical signal, and light such as visible light and infrared light is used. The present invention can also be applied to an imaging device that converts electric signals.

(First embodiment)
First, a first embodiment of the present invention will be described. FIG. 1 is a simplified equivalent circuit showing a first embodiment of a radiation imaging apparatus according to the present invention. The semiconductor conversion element of this embodiment is a semiconductor element that converts electromagnetic waves including radiation such as visible light and infrared light, X-rays, α-rays, β-rays, γ-rays, etc. into electrical signals, such as X-rays. When using a photoelectric conversion element that does not directly convert radiation, for example, converts light such as visible light into an electrical signal, the wavelength above which radiation is converted into light that can be photoelectrically converted by a photoelectric conversion element such as visible light A phosphor layer as a conversion layer is disposed.

  In the substrate 101, pixels each having a pair of capacitors (C11, C12,...) And TFTs (T11, T12,...) Made of semiconductor conversion elements are arranged in a matrix. In the periphery, a signal processing circuit unit 102, a power supply driver 103, and a shift register 104 are connected to the substrate 101. In the substrate 101, TFTs (Ta1, Ta2,...), (Tb1, Tb2,...) Different from the TFTs of the pixel portion are arranged between the pixel portion and the shift register 104. This is used as a selection switch for selecting an arbitrary gate wiring.

  For example, when the power supply driver 103 applies a TFT on voltage to the wiring GA and a TFT off voltage is applied to the GB (selection switch Ta is on and selection switch Tb is off), the shift register 104 is driven to drive the pixel portion. When the on-voltage of the TFT is applied, the on-voltage of the TFT is applied to the gate wiring connected to T11, T13, T15, T17,..., So that the first, third, fifth, seventh,. Thus, the charge from the semiconductor conversion element connected to the odd-numbered wiring can be transmitted to the signal processing circuit unit 102.

  Next, when the TFT off voltage is applied to the wiring GA by the power supply driver 103 and the TFT on voltage is applied to GB (the selection switch Ta is off and the selection switch Tb is on), the pixel unit is driven by the shift register 104. Is applied to the gate wiring connected to T12, T14, T16, T18,..., So that the second, fourth, sixth, eighth, The charges from the semiconductor conversion elements connected to the even-numbered wiring such as... Can be transmitted to the signal processing circuit unit 102.

  In FIG. 1, the selection switch controlled by the power supply driver 103 is controlled by two systems A and B. However, each wiring group is composed of three or more gate wirings, and the selection switch is controlled by multiple systems. I do not care. In addition, a selection switch may be provided between the signal wiring connected to the signal processing circuit unit 102 and the signal processing circuit unit 102. However, when the selection switch is provided in the signal wiring, if the wiring resistance is increased, noise is increased during charge transfer, so that the wiring resistance needs to be sufficiently reduced.

  Further, it is necessary to sufficiently reduce the amount of leakage when the selection switch is turned off. As the selection switch, since the resistance of the gate wiring of the pixel portion is about 2 to 20 kΩ, an on-resistance of about 0.2 to 5 kΩ, which is a sufficiently small resistance with respect to the resistance, is desirable. good. In the case of a polycrystalline silicon TFT having high mobility, for example, the on-resistance can be achieved with a channel width of about 10 to 1000 μm. In the case of an amorphous silicon TFT, since the mobility is low, for example, a channel width of about 100 to 10,000 μm may be required. Note that Vg_on in FIG. 1 indicates the operating voltage of the TFT in the pixel portion, and Vg_off indicates the off voltage.

  FIG. 2 is a diagram showing an example of a plan view of a TFT which is the selection switch of FIG. A TFT having a high mobility such as a polycrystalline silicon TFT can obtain a desired on-resistance with a small channel width. However, if the mobility is low such as an amorphous silicon TFT, it is necessary to increase the channel width. . Therefore, in this embodiment, as shown in FIG. 2, the source / drain electrodes have a comb structure, whereby the channel width can be increased in a small area and the on-resistance can be decreased.

  In addition, by arranging a plurality of TFTs shown in FIG. 2 in parallel, it is possible to freely arrange them at a plurality of arbitrary locations. At this time, when a defect occurs in the TFT which is the selection switch, only the defective TFT is separated by, for example, laser repair by using a parallel circuit, and other TFTs are used as the selection switch so that the defective substrate is not used. It will end.

  FIG. 3 is an equivalent circuit diagram of the TFT portion when the selection switch (for example, Ta1) of FIG. In FIG. 3, five TFTs are connected in parallel. By setting the on-resistance of one TFT to about 10 kΩ, for example, and connecting five TFTs in parallel, the on-resistance can be connected at about 2 kΩ. In addition, even if one of the 5 TFTs is short-circuited, for example, even if the shorted part is separated by laser repair, it can be connected by 4 TFTs. Is possible.

FIG. 4 is a plan view of one pixel in which a semiconductor conversion element and a thin film transistor (TFT) are paired. A semiconductor conversion element is arranged on the left part of FIG. 4 and a TFT is arranged on the upper right part. The semiconductor conversion element photoelectrically converts visible light. Although not shown above the semiconductor conversion element, a wavelength conversion layer such as a phosphor, for example, Gd ₂ O ₂ S that converts X-rays into visible light, A phosphor layer such as CsI is disposed. A TFT as a selection switch is arranged on the substrate 101 between the gate wiring connected to the gate electrode 1 of the TFT and the shift register 104 arranged outside the substrate 101, and each wiring group has one wiring group. The wiring is collected and connected to the shift register 104. The selection switch is formed on the substrate 101 with the same layer configuration as the TFT and the semiconductor conversion element of the pixel portion.

  FIG. 5 is a cross-sectional view taken along line AA in FIG. The left part is a semiconductor conversion element, and the right part is a TFT. In FIG. 5, the semiconductor conversion element on the left is a MIS type semiconductor comprising a metal film (third electrode layer), an insulating layer (third insulating layer), and a high resistance semiconductor layer (second high resistance semiconductor layer) from the bottom. Although it is a conversion element, it may be a PIN type semiconductor conversion element comprising an n-type semiconductor doping layer, a high resistance semiconductor layer, and a p-type semiconductor layer from the bottom. In the case of the MIS type semiconductor conversion element and the PIN type semiconductor conversion element, as shown in FIG. 5, a wavelength conversion layer such as a phosphor is required on the upper part. A direct conversion element that directly photoelectrically converts radiation such as amorphous selenium or lead iodide can also be used. In the case of such a direct conversion element, it is not necessary to arrange a phosphor layer on top.

  Here, there are various methods for reading the charge generated in the semiconductor conversion element. For example, as shown in FIG. 1, when two gate wirings (signal wirings) are selected with one selection switch, there is a pattern of reading out one of the two, and then the other one and two at the same time. is there. Further, for example, when four gate wirings (signal wirings) are selected by one selection switch, there are a plurality of patterns to be read, such as two of the four, and then the other two and four at the same time.

(Second Embodiment)
Next, a second embodiment of the present invention will be described. FIG. 6 is a simplified equivalent circuit showing a second embodiment of the radiation imaging apparatus according to the present invention. The semiconductor conversion element of this embodiment is a semiconductor element that converts electromagnetic waves including radiation such as visible light and infrared light, X-rays, α-rays, β-rays, γ-rays and the like into electrical signals. When using a photoelectric conversion element that does not directly convert radiation, for example, converts light such as visible light into an electrical signal, the wavelength above which radiation is converted into light that can be photoelectrically converted by a photoelectric conversion element such as visible light A phosphor layer as a conversion layer is disposed.

  In the substrate 101, pixels each having a pair of capacitors (C11, C12,...) And TFTs (T11, T12,...) Made of semiconductor conversion elements are arranged in a matrix. In the periphery, a signal processing circuit unit 102, a power supply driver 103, and a shift register 104 are connected to the substrate 101. In the substrate 101, a TFT different from the TFT of the pixel portion is disposed between the pixel portion and the shift register 104. This is used as a selection switch for selecting an arbitrary gate wiring.

  For example, when the power supply driver 103 applies a TFT on voltage to the wiring GA and a TFT off voltage is applied to the GB (selection switch Ta is on and selection switch Tb is off), the shift register 104 is driven to drive the pixel portion. When the on-voltage of the TFT is applied, the on-voltage of the TFT is applied to the gate wiring connected to T11, T13, T15, T17,..., So that the first, third, fifth, seventh,. Thus, the charge from the semiconductor conversion element connected to the odd-numbered wiring can be transmitted to the signal processing circuit unit 102.

  Next, when the TFT off voltage is applied to the wiring GA by the power supply driver 103 and the TFT on voltage is applied to GB (the selection switch Ta is off and the selection switch Tb is on), the pixel unit is driven by the shift register 104. Is applied to the gate wiring connected to T12, T14, T16, T18,..., So that the second, fourth, sixth, eighth, The charges from the semiconductor conversion elements connected to the even-numbered wiring such as... Can be transmitted to the signal processing circuit unit 102.

  As the selection switch, since the resistance of the gate wiring of the pixel portion is about 2 to 20 kΩ, an on-resistance of about 0.2 to 5 kΩ, which is a sufficiently small resistance with respect to the resistance, is desirable. good. In the case of a polycrystalline silicon TFT having high mobility, for example, the on-resistance can be achieved with a channel width of about 10 to 1000 μm.

  In the case of an amorphous silicon TFT, since the mobility is low, for example, a channel width of about 100 to 10,000 μm may be required. For example, when a polycrystalline silicon TFT is used, the on-resistance can be reduced, but the off-state leakage current is larger than that of amorphous silicon. Similarly, in an amorphous silicon TFT, if the channel width is extremely increased in order to reduce the on-resistance, the off-current increases in a form that is proportional to the channel width.

  Applying an on-voltage of the TFT to the wiring GA, the signal processing circuit unit 102 receives charges from the semiconductor conversion elements connected to the odd-numbered gate wirings such as the first, third, fifth, seventh,. Is applied to the wiring GB, and the TFTs connected to the even-numbered gate wirings such as the second, fourth, sixth, eighth,... From the top are turned off. However, if the off-state current of the TFT connected to the wiring GB is large, a small current is applied to the even-numbered gate wiring due to the on-voltage of the TFT supplied from the shift register 104 to the TFT of the pixel portion connected to the odd-numbered wiring. Flows, the potential of the even-numbered gate wiring fluctuates, and a part of the on-voltage is applied to the TFT.

  Therefore, for example, by connecting all the gate lines to the off-power supply of the TFT in the power supply driver with a resistance lower than the off-state resistance of the selection TFT, the gate lines are fixed to the off-voltage of the TFT. The TFT becomes stable. In FIG. 6, the gate wiring in the pixel and the power supply driver 103 are connected by holding switches (Th1, Th2,...) For voltage holding shown on the right side. The holding switch is formed of a TFT, and is fixed to the off potential VA of the TFT in the pixel supplied from the power supply driver 103. A driving voltage is supplied from the CG of the power supply driver 103 to the gate of the holding switch to control the holding switch. Note that the holding switch is formed on the substrate 101 in the same layer configuration as the TFT and the semiconductor conversion layer of the pixel portion, like the selection switch. The holding switch may be disposed between the selection switch and the pixel.

Here, if the resistance of the holding switch is smaller than the selection switch, the on-voltage of the TFT supplied from the shift register 104 is not sufficiently transmitted. Further, if the resistance of the holding switch is larger than the OFF resistance of the selection switch, the influence due to the leakage of the selection switch cannot be excluded. Therefore, if the ON resistance of the selection switch is R _{2 — on} , the OFF resistance is R _{2 —} off, and the connection resistance of the holding switch is R _h ,
R _{2_on} <R _h <R _{2_off}
The relationship is essential. Therefore, in order to control the R _h, it is necessary to optimize the gate voltage applied to the channel width and the holding switch holding switch.

FIG. 7 is a diagram showing TFT characteristics of the selection switch and the holding switch in FIG. The horizontal axis represents the gate voltage of the TFT, and the vertical axis represents the current flowing between the source and drain of the TFT. In order to reduce the on-resistance, the selection switch uses polycrystalline silicon or has a long channel width. Since both the on-resistance and the off-resistance are lower than the holding switch, the flowing current ID is large. Therefore,
R _{2_on} <R _h <R _{2_off}
In order to achieve this resistance, for example, the ON voltage of the selection switch may be set to 10 to 20 (V), the OFF voltage may be set to -10 to 0 (V), and the gate voltage of the holding switch may be set to 5 to 15 (V). In this case, since the selection switch alternately applies the on-voltage and the off-voltage, the change in the threshold voltage of the TFT is small. However, if the holding switch is always set to the on-voltage, the threshold voltage may shift. Therefore, after all the charges from the pixel are read out, once the off voltage is applied, the threshold voltage of the TFT does not change. In addition, a plurality of holding switches are arranged in parallel, the gate voltage of each holding switch is driven separately, and the ON voltage / OFF voltage of the gate is alternately applied to one holding switch, whereby the threshold voltage of the holding switch is set. Can be prevented from shifting.

  FIG. 8A is a schematic configuration diagram showing a mounting example of the radiation imaging apparatus according to the present invention, and FIG. 8B is a schematic cross-sectional view.

  A plurality of photoelectric conversion elements and TFTs are formed in a sensor substrate 6011, and a flexible circuit substrate 6010 on which a shift register SR1 and a detection integrated circuit IC are mounted is connected. The opposite side of the flexible circuit board 6010 is connected to the circuit boards PCB1 and PCB2. A plurality of sensor substrates 6011 are bonded on a base 6012, and a lead plate 6013 is mounted under the base 6012 constituting a large photoelectric conversion device to protect the memory 6014 in the processing circuit 6018 from X-rays. Has been. A scintillator (phosphor layer) 6030 for converting radiation such as X-rays into visible light, for example, CsI is deposited on the sensor substrate 6011. Further, as shown in FIG. 8B, the whole is housed in a case 6020 made of carbon fiber. The scintillator 6030 corresponds to the phosphor layer in FIG.

(Third embodiment)
FIG. 9 is a diagram showing an embodiment when the radiation imaging apparatus according to the present invention is applied to a radiation diagnostic system. The X-ray 6060 generated in the X-ray tube 6050 passes through the chest 6062 of the patient or subject 6061, and the photoelectric conversion device 6040 with the scintillator mounted on the top (the photoelectric conversion device with the scintillator mounted on the top constitutes a radiation imaging device). Is incident on. This incident X-ray includes information inside the body of the patient 6061. The scintillator emits light in response to the incidence of X-rays, and this is photoelectrically converted to obtain electrical information. This information can be digitally converted and image-processed by an image processor 6070 serving as a signal processing means and observed on a display 6080 serving as a display means in a control room.

  Further, this information can be transferred to a remote place by transmission processing means such as a telephone line 6090 and can be displayed on a display 6081 serving as a display means such as a doctor room in another place or stored in a recording means such as an optical disk. It is also possible for a doctor to make a diagnosis. Moreover, it can also record on the film 6110 used as a recording medium by the film processor 6100 used as a recording means.

  The present invention can be used in a radiation detection apparatus using radiation such as X-rays for medical and nondestructive inspection. Further, it can be used for an imaging device that converts light such as visible light into an electric signal, in particular, an imaging device having a large-area photoelectric conversion region.

It is a simple equivalent circuit which shows 1st Embodiment of the radiation imaging device which concerns on this invention. It is a top view of TFT which is a selection switch of FIG. 2 is an equivalent circuit of a TFT portion when a plurality of selection switches in FIG. 1 are formed. FIG. 3 is a plan view of one pixel in which a semiconductor conversion element and a thin film transistor (TFT) are paired. It is sectional drawing in the AA of FIG. It is a simple equivalent circuit which shows the 2nd Embodiment of this invention. It is a figure which shows the electrical property of the selection switch and holding switch which are used in 2nd Embodiment. It is a figure which shows the example of mounting of the radiation imaging device which concerns on this invention. It is a figure showing one embodiment of a radiation diagnostic system using a radiation imaging device concerning the present invention. It is an image figure showing the plane structure of a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Board | substrate 102 Signal processing circuit part 103 Power supply driver 104 Shift register 6010 Flexible circuit board 6011 Sensor board 6012 Base 6013 Lead plate 6014 Memory 6018 Processing circuit 6020 Case 6030 Scintillator 6040 Photoelectric conversion device 6050 X-ray tube 6060 X-ray 6061 Patient or subject 6062 Chest 6070 Image processor 6080, 6081 Display 6090 Telephone line 6100 Film processor 6110 Film C11, C12, ... Capacitor T11, T12, ... TFT
Ta1, Ta2, ... Selection switch Tb1, Tb2, ... Selection switch Th1, Th2, ... Holding switch

Claims (20)

Pixels including a semiconductor conversion element that converts an incident electromagnetic wave into an electric signal and a first thin film transistor for reading out the signal of the semiconductor conversion element are two-dimensionally arranged on the substrate, and are arranged in one direction on the substrate. A gate wiring to which the gate electrodes of the first thin film transistors of the plurality of pixels arranged in common are connected in common, and a source electrode or a drain electrode of the first thin film transistors of the plurality of pixels arranged in a direction different from the one direction are connected in common. And a selection switch for selecting a specific wiring from a wiring group composed of a plurality of the gate wirings or the signal wirings, on the substrate. . The imaging device according to claim 1, wherein the selection switch is a second thin film transistor including the same layer as the first thin film transistor or the semiconductor conversion element. The imaging apparatus according to claim 2, wherein the second thin film transistor is a polycrystalline thin film silicon transistor or an amorphous silicon thin film transistor. 4. The semiconductor conversion element according to claim 1, wherein the semiconductor conversion element is an MIS type semiconductor conversion element including an insulating layer, a high-resistance semiconductor layer, an ohmic contact layer, and electrode layers arranged above and below. The imaging device described in 1. The imaging apparatus according to claim 4, wherein the ohmic contact layer also serves as one of electrode layers of the semiconductor conversion element. 4. The semiconductor conversion element according to claim 1, wherein the semiconductor conversion element is a PIN semiconductor conversion element including an n-type semiconductor layer, a high-resistance semiconductor layer, a p-type semiconductor layer, and electrode layers arranged above and below. The imaging apparatus of Claim 1. The imaging according to any one of claims 1 to 6, wherein the gate wiring or the signal wiring is grouped into one routing wiring for each wiring group outside the selection switch on the substrate. apparatus. When reading the charge generated in the semiconductor conversion element, one wiring selected from each wiring group is sequentially driven, and after the driving, another wiring is selected from each wiring group and sequentially driven. The imaging apparatus according to claim 1, further comprising a repeating unit. When reading the charge generated in the semiconductor conversion element, the operation of simultaneously selecting a plurality of wirings from each wiring group is sequentially repeated, and a plurality of wirings in another combination are selected from each wiring group after the driving. The imaging apparatus according to claim 1, further comprising a unit that repeats driving sequentially. 8. The apparatus according to claim 1, further comprising means for sequentially repeating an operation of simultaneously selecting and driving all the wirings in each wiring group when reading out the electric charges generated in the semiconductor conversion element. The imaging device described. The image pickup apparatus according to claim 1, wherein the integrated routing wiring is taken out only from one side of the substrate. The wiring group is the gate wiring, and the gate wiring is connected to a high resistance inside or on the opposite side of the selection switch, and is fixed to an off potential of the first thin film transistor. The imaging device according to any one of 11. The imaging device according to claim 1, wherein the high-resistance element connecting the gate wiring includes at least a high-resistance semiconductor layer. The image pickup apparatus according to claim 1, wherein the high-resistance element is a third thin film transistor including the same layer as the first thin film transistor or the semiconductor conversion element. When the operating resistance of the second thin film transistor is R _{2_on} , the off resistance is R _{2_off} , and the connection resistance of the third thin film transistor that connects the gate wirings with high resistance is R _h ,
R _{2_on} <R _h <R _{2_off}
The image pickup apparatus according to claim 1, wherein the image pickup apparatus is an image pickup apparatus. The operating resistance R _{2_On} second thin film transistor, an imaging apparatus according to any one of claims 1 to 15, characterized in that it is 50kΩ or less. The imaging according to any one of claims 1 to 16, further comprising means for controlling a voltage applied to a gate electrode of the third thin film transistor and variably controlling a connection resistance connecting the gate wirings. apparatus. 18. The image pickup apparatus according to claim 1, wherein the semiconductor conversion element of the image pickup apparatus is a photoelectric conversion element, the electromagnetic wave is radiation, and the photoelectric conversion element emits radiation on the photoelectric conversion element. A radiation imaging apparatus comprising a wavelength conversion layer that converts light into a wavelength region that can be photoelectrically converted by a conversion element. The image pickup apparatus according to claim 1, wherein the semiconductor conversion element of the image pickup apparatus is an element that directly photoelectrically converts radiation, and the electromagnetic wave is radiation. Radiation imaging device. The radiation imaging apparatus according to claim 18 or 19,
Signal processing means for processing signals from the radiation imaging apparatus;
Recording means for recording a signal from the signal processing means;
Display means for displaying a signal from the signal processing means;
Transmission processing means for transmitting a signal from the signal processing means;
A radiation imaging system comprising: a radiation source for generating the radiation.

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