JP2005519260A5

JP2005519260A5 -

Info

Publication number: JP2005519260A5
Application number: JP2003537118A
Authority: JP
Filing date: 2002-10-16
Publication date: 2006-01-05
Anticipated expiration: 2022-10-16

Claims

A test semiconductor device having a test structure designed for voltage contrast inspection,
The first sub-structure region having a plurality of floating conductive structure designed to charge the first potential in the voltage contrast test, and
Before Symbol Voltage testing a semiconductor device including a second sub-structure region coupled to a conductive structure having a size selected so that to a static-different second potential to the first potential during contrast test.

A testing semiconductor device according to claim 1, wherein the first and second sub-structures area semiconductor device for testing, which is formed in a single photolithographic step.

A testing semiconductor device according to claim 1 or 2, wherein the first and second sub-structures area semiconductor devices for testing are not bonded to the substrate.

A testing semiconductor device according to any one of claims 1 to 3, wherein the first and second sub-structure region both test semiconductor device at the same level on.

A testing semiconductor device according to any one of claims 1 to 4, wherein the second sub-structure region, respectively adjacent to one of the conductive line group of said first sub-structure region A test semiconductor device comprising a plurality of parallel strip segments.

A testing semiconductor device according to claim 5, wherein the second sub-structure region testing a semiconductor device to form a zigzag shape.

A testing semiconductor device according to any one of claims 1 to 6, wherein the second sub-structure region is designed to charge more slowly than the first sub-structure region during voltage contrast test semiconductor device for a test.

A testing semiconductor device according to claim 1, wherein the second sub-structure region is designed to have a different brightness level than the first sub-structure region during voltage contrast test semiconductor device for a test.

A testing semiconductor device according to any one of claims 1 to 8, wherein the conductive structures of the second sub-structure region, in the voltage contrast test, before Symbol second sub structure area A test semiconductor device having a size selected such that an existing partial opening can be inspected.

A method of manufacturing a test semiconductor device designed for voltage contrast inspection,
Forming a first sub-structure region having a plurality of floating conductive structure designed to charge the first potential by the scanning by the electron beam, and a different second potential to the first potential by scanning by the electron beam comprises forming the second sub-structure region which is coupled to a conductive structure having a selected size so as to charge the,
Wherein the first and second sub-structure region manufacturing method together formed in a single photolithographic step.

A method according to claim 10, the manufacturing method wherein the first and second sub-structure region is formed in a single photolithographic step.

A method according to claim 10 or 11, the manufacturing method wherein the first and second sub-structure region is not bonded to the substrate.

Manufacturing method A manufacturing method according to any one of claims 10 to 13, wherein the first and second sub-structure region which is both on the same level on.

A process according to any one of claims 10 to 13, wherein the second sub-structure region, a plurality of respectively adjacent to one of the conductive line group of said first sub-structure region A manufacturing method comprising parallel strip segments.

A method according to claim 14, the manufacturing method the second sub-structure region to form a zigzag shape.

A process according to any one of claims 10 to 15, wherein the second sub-structure region is designed to charge more slowly than the first sub-structure region during voltage contrast test Tei Ru manufacturing method.

A process according to any one of claims 10 to 16, wherein the second sub-structure region is designed to have a different brightness level than the first sub-structure region during voltage contrast test production methods that have been.

A process according to any one of claims 10 to 17, wherein the conductive structures of the second sub-structure region, the voltage contrast test, partially open present in the second sub-structure region Manufacturing method formed as a size that can be inspected.

A process according to any one of claims 10 to 18, a part of the sub-structure region is scanned with an electron beam, the first and by obtaining a voltage contrast image of the scanned portion further comprising producing method to inspect the second sub-structure region.

A method according to claim 19, determining whether a defect is present in the first and / or second sub-structure in the region based on the voltage contrast image, and when a defect is present, further comprising producing method to determine the position of the defect by step moving the electron beam to different parts of the first and / or second sub-structure region.

A method for inspecting a test structure provided in a semiconductor ,
Based on whether there is an unexpected pattern of potential in the test structure as a result of the initial scan by first scanning two or more initial portions of the test structure with a charged particle beam. Determining whether a defect is present in the structure; and, when there is a defect, sequentially stepping to one or more potential defect portions of the test structure, the one or more of the test structure Scanning a potential defect with a charged particle beam, thereby locating the defect.

The method of claim 21, wherein the step moves to a process according to shape of the binary search pattern to locate the defect.

23. A method according to claim 21 or 22, wherein first determining two or more initial portions of the test structure with a charged particle beam to determine whether a defect is present. ,
Obtaining a first potential at the first end by scanning a first end of the test structure;
Obtaining a second potential at the second end by scanning the second end of the test structure; and when the potential at the first end is different from the potential at the second end, the test structure has an open defect. A method that includes determining then.

24. A method as claimed in claim 21 to claim 23, sequentially stepping to one or more potential defect portions of the test structure and charging the one or more potential defect portions of the test structure. Scanning with a focused particle beam, thereby locating the defect,
(A) stepping to a first current position of the test structure and scanning the first current position of the test structure looking for a defect;
(B) when the defect is not found and a luminance transition occurs between the previous scan and the current scan, step to the next part of the test structure between the previous scan and the current scan And (c) the test structure not between the previous scan and the current scan when the defect is not found and a luminance transition does not occur between the previous scan and the current scan. Including stepping to the next part of the.

25. The method of claim 24, comprising:
The defect is not found, and when the transition of brightness occurring between the previous scan and the current scan, the next portion, intermediate near suppose between said previous scan and said current scan,
When the defect is not found and no luminance transition occurs between the previous scan and the current scan, the next portion is between the current scan and the previous scan and the current scan. and in the middle between the free end of the test structure
Method.

26. The method of claim 25, comprising:
Further determining whether the current scan includes a luminance transition point for the current scan that is not defective;
The method of stepping to the next part is performed in a new orientation when the current scan includes the luminance transition point that is not defective.

27. The method of claim 26, wherein the new orientation of the next scan is perpendicular to the orientation of the previous scan.

The method according to claim 24, a method of repeating the operation until said the defect is found (b) and (c).

A method according to any of claims 21 to 28, wherein
The defect is an open defect example, the defect when the transition of brightness is happening in the test structure itself, a method of the said is an open defect.

30. The method of claim 29, wherein the open defect can be a partial open defect.

A method according to any of claims 21 to 28, wherein
How to the defect is short defect example, the defect is the short defect when physical short circuit is bought One found within the test structure.

An inspection system for detecting contact Keru defects in the test structure provided on a semiconductor,
A beam generator for generating an electron beam,
A detector that detects electrons, and by initially scanning two or more initial portions of the test structure with a charged particle beam, there is an unexpected pattern of potential in the test structure as a result of the initial scan. Based on whether or not there are defects in the test structure;
When a defect is present, it sequentially steps to one or more potential defect portions of the test structure and scans the one or more potential defect portions of the test structure with a charged particle beam, thereby An inspection system comprising a controller configured to locate the defect.

Inspection system An inspection system according to claim 32, when that sequentially move step to one or more potential defect of the test structure, which moves in the form of binary search pattern to locate the defect .

The inspection system according to claim 32 or 33,
Determining whether a defect is present in the test structure by first scanning two or more initial portions of the test structure with a charged particle beam;
Obtaining a first potential at the first end by scanning a first end of the test structure;
Obtaining a second potential at the second end by scanning the second end of the test structure; and when the potential at the first end is different from the potential at the second end, the test structure has an open defect. An inspection system achieved by deciding upon.

An inspection system according to any of claims 32 to 34,
Stepping sequentially to one or more potential defect portions of the test structure, scanning the one or more potential defect portions of the test structure with a charged particle beam, thereby locating the defect That is
(A) stepping to a first current position of the test structure and scanning the first current position of the test structure looking for a defect;
(B) when the defect is not found and a luminance transition occurs between the previous scan and the current scan, step to the next part of the test structure between the previous scan and the current scan And (c) the test structure not between the previous scan and the current scan when the defect is not found and a luminance transition does not occur between the previous scan and the current scan. Inspection system including stepping to the next part of

The inspection system according to claim 35, wherein
The defect is not found, and when the transition of brightness occurring between the previous scan and the current scan, the next portion, intermediate near suppose between said previous scan and said current scan,
When the defect is not found and no luminance transition occurs between the previous scan and the current scan, the next portion is between the current scan and the previous scan and the current scan. and in the middle between the free end of the test structure
Inspection system.

The inspection system according to claim 36, wherein
The controller is further configured to determine whether the current scan includes a luminance transition point for the current scan that is not defective;
The stepping operation to the next part is performed in a new orientation when the current scan includes a non-defective luminance transition point.

38. The inspection system of claim 37, wherein the new orientation of the next scan is perpendicular to the previous scan orientation.

36. The inspection system according to claim 35, wherein operations (b) and (c) are repeated until the defect is found.

40. The inspection system according to any one of claims 32 to 39, wherein:
Inspection system wherein defect example an open defect, the defect is to be when the transition of brightness is happening in the test structure itself is the open defect.

41. The inspection system according to claim 40, wherein the open defect is a partial open defect.

40. The inspection system according to any one of claims 32 to 39, wherein:
The defect is a short defect, the defect inspection system that said a short defect when physical short circuit was not find in the test structure.