JP2005354084A - Method of manufacturing wiring structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a wiring structure for a semiconductor device or micro machine equipment easily at a low cost. <P>SOLUTION: A photopolymer film 107 is formed on a substrate 101 having metal wiring 106. Then, a latent image 110 is formed at the photopolymer film 107 on the metal wiring 106 by the exposure of ultraviolet ray 109 by use of a photomask 108 having a pattern, the width of which is narrower than that of the metal wiring 106 and which penetrates through light. At that time, light exposure amount is set according to the undulation of the photopolymer film 107. Then, the photopolymer film 107 is planarized by a development process under development condition under which differences between a latent image 110 portion and a non-exposed portion in film thickness and etching speed are balanced. Then, the photopolymer film 107 is cured and a photosensitizing agent is eliminated by hard baking. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a method for manufacturing a wiring structure formed on a substrate constituting a semiconductor device, a micromachine device, or the like.

In order to manufacture a semiconductor device or a micromachine device, it is necessary to form a wiring structure whose periphery is insulated by an insulating film, or to realize a multilayered wiring. In that case, in order to eliminate the level difference that causes the wiring breakage or the like, a planarization technique for planarizing the surface of the insulating film with which the wiring contacts is necessary. Conventional planarization techniques that have been used to form wiring of semiconductor devices, particularly semiconductor integrated circuit devices, include a chemical mechanical polishing (CMP) method and an etch back method. A method of manufacturing a wiring structure of a semiconductor device or micromachine device using these techniques will be described with reference to the drawings.

First, an example of the CMP method will be described with reference to FIG.
1118014962500_0
As shown in (a), a wiring material 303 is deposited on a semiconductor substrate 301 having an insulating layer 302, and a resist pattern 304 is formed on the wiring structure forming portion by photolithography. Next, the wiring material 303 is etched using the resist pattern 304 as a mask, and then the resist pattern 304 is removed, thereby forming the metal wiring 305 shown in FIG. 7B on the semiconductor substrate 301. Next, as shown in FIG. 7C, an insulating film 306 covering the semiconductor substrate 301 and the metal wiring 305 is deposited. Next, the projecting portion of the insulating film 306 is cut by CMP to obtain a flattened insulating film 306 shown in FIG. 7R> 7 (d).

Next, an example of the etch back method will be described with reference to FIG. Since FIGS. 8A to 8C are the same as FIGS. 7A to 7C, description thereof is omitted. Next, as shown in FIG. 8D, a resist 307 is newly applied on the insulating film 306 to form a flat surface. Next, plasma etching is performed under the condition that the etching rates of the insulating film 306 and the resist 307 are the same, and the planarized insulating film 306 shown in FIG.

Further, a planarization method that combines the above-described method and an exposure technique is also known. This planarization method will be described with reference to FIG. Since FIGS. 9A to 9C are the same as FIGS. 7A to 7C, description thereof will be omitted. Next, a photoresist 308 is newly applied on the insulating film 306, and is patterned by photolithography so that only the convex portions are not covered by photolithography as shown in FIG. Next, the insulating film 306 is etched using the photoresist 308 as a mask, and then the photoresist 308 is removed, whereby an insulating film 306 having a residual protrusion 309 shown in FIG. 9E is obtained. Next, the residual protrusion 309 is further removed by etching or CMP to obtain a flattened insulating film 306 shown in FIG.

However, the above-described method requires an apparatus for depositing an insulating film, an apparatus for flattening, and the like, and the process becomes complicated, so an increase in cost and a decrease in throughput are inevitable. In addition, most of the insulating films used in the conventional planarization technique have a film thickness of about 1 μm because of their use, and it is difficult to realize a film thickness structure of several tens of μm required for semiconductor sensors, micromachine devices, and the like. is there. Therefore, there has been a demand for a method that can form a thick insulating film and can easily realize flattening. An object of the present invention is to provide a manufacturing method capable of easily realizing a wiring structure for a semiconductor device or a micromachine device at a low cost.

In order to solve the above-described problems, a method for manufacturing a wiring structure according to the present invention includes a step of forming a metal wiring on a substrate, and a photosensitive property that fills between the metal wiring formed on the substrate and covers the metal wiring. Forming a resin layer made of an organic material having a thickness thicker than the thickness of the metal wiring, forming a latent image on the resin layer by irradiating a predetermined region of the resin layer with a predetermined amount of ultraviolet light for a predetermined time, A step of flattening the undulation of the resin layer by developing the resin layer having an image under predetermined conditions, and a step of eliminating the photosensitivity by heating the developed resin layer to a predetermined temperature and curing It is characterized by having.

In this case, in one configuration example of the method for manufacturing the wiring structure, the resin layer is flattened by development processing and heat processing, and processed to a thickness that exposes the surface of the metal wiring. A configuration example of the above-described method for manufacturing a wiring structure includes a step of forming a next-layer metal wiring on a heat-treated resin layer and an exposed metal wiring, and a photosensitive organic material on the resin layer. Forming a resin layer of the next layer with a thickness obtained by adding a predetermined thickness to the thickness of the metal wiring of the next layer, and irradiating a predetermined region of the resin layer of the next layer with a predetermined amount of ultraviolet light for a predetermined time. A step of forming a latent image on the resin layer of the layer, a step of developing the resin layer of the next layer having the latent image under a predetermined condition to flatten the undulation of the resin layer of the next layer, and the step of developing the next The step of forming the next layer was repeated a predetermined number of times, including a step of forming a next layer consisting of a step of removing the photosensitivity by heat-treating the resin layer of the layer to a predetermined temperature and curing.

Further, a step of removing the resin layer after forming a predetermined number of metal wirings is provided. In this case, in one configuration example of the step of removing the resin layer, oxygen plasma is used for removing the resin layer. In addition, as one configuration example of the method for manufacturing the wiring structure, a resin layer that is easily removed when the resin layer is irradiated with light is developed. In this case, a resin having a polyimide or polybenzoxazole precursor as a substrate is used for the resin layer.

As described above, when the manufacturing method of the present invention is used, the number of steps and the number of manufacturing apparatuses can be greatly reduced as compared with the conventional wiring process, so that the throughput can be greatly improved and the cost can be reduced. it can. In addition, since an organic resin film is used, a wiring with a thickness of 10 μm or more can be formed, and a structure of a semiconductor device or a micromachine device can be easily obtained.

Embodiments of the present invention will be described below with reference to the drawings.

First, a first embodiment of the present invention will be described with reference to FIGS. In the first embodiment, the surface of the insulating layer covering the wiring on the substrate is flattened.
First, as shown in FIG. 1A, a metal film 103 made of chromium is thinly formed to a thickness of about 0.1 μm on a substrate 101 having an insulating layer 102 by vapor deposition, and in addition, on the metal film 103 Further, a seed film 104 made of gold is formed to a thickness of about 0.1 μm by vapor deposition. Here, the metal film 103 is formed in order to improve the adhesion between the substrate 101 and the wiring material film or the seed film 104. Further, for example, it is used as a barrier film for preventing diffusion of a material used for the wiring material film or preventing movement of other elements. As the metal film 103, an optimum film may be selected depending on the type of wiring material to be used. When the wiring material film is formed by plating, the metal film 103 can be used as a seed film depending on the combination of materials used.

Next, as shown in FIG. 1B, a photoresist 105 is applied on the seed film 104 to a thickness of about 5.0 μm and patterned by photolithography to remove the photoresist 105 from the wiring structure forming portion. Then, the seed film 104 is exposed. Next, as shown in FIG. 1C, a wiring material film made of gold is formed on the exposed seed film 104 to a thickness of about 5.0 μm by electrolytic plating, and then the photoresist 105 is peeled off. Thus, the metal wiring 106 is formed. The wiring material film is not limited to gold, and aluminum, copper, silver, or the like can also be used. Further, the method is not limited to the plating method, and other film forming methods such as a sputtering method, a CVD method, or a flow method may be used.

Next, as shown in FIG. 1D, unnecessary seed film 104 and metal film 103 are removed by wet etching. The treatment liquid used for removing the seed film 104 is a mixed liquid of iodine, ammonium iodide, water, and ethanol, and the etching rate is 0.05 μm per minute. The treatment liquid used for removing the metal film 103 is a mixed liquid of potassium ferricyanide, NaOH, and water, and the etching rate is 0.1 μm per minute. After the etching is completed, the substrate 101 is washed with pure water or the like to wash away the treatment liquid and dry it.

Next, as shown in FIG. 2E, a photosensitive resin is applied to a thickness of 8.0 μm by spin coating or the like on the substrate 101 having a wiring structure, and this is pre-baked to volatilize the solvent. The photosensitive resin film 107 is formed by drying. Needless to say, the photosensitive resin film 107 is an insulating material, and the photosensitive resin described below has an insulating property. As a photosensitive resin constituting the photosensitive resin film 107, a positive photosensitive resin obtained by adding a positive photosensitive agent (such as diazonaphthoquinone) to a base resin using polyimide, polyamic acid, polybenzoxazole (PBO) or the like as a substrate. A functional resin is used. In this case, with a positive photosensitive resin using PBO as a base resin, good results were obtained using, for example, CRC8300 (trade name) manufactured by Sumitomo Bakelite Co., Ltd. In the case of this CRC8300, prebaking is performed for 4 minutes on a hot plate heated to 120 ° C.

Next, as shown in FIG. 2F, a photomask 108 having a pattern narrower than the metal wiring 106 and transmitting light is used, and the photosensitive resin film 107 is exposed to ultraviolet rays 109 through the photomask 108. Then, a latent image 110 is formed on the photosensitive resin film 107 on the metal wiring 106.

Here, the exposure process will be described in more detail. First, in the photomask 108 to be used, a pattern 108c having a width smaller than that of the metal wiring 106 constituted by the light transmitting portion is formed at a desired position. For example, a mask alignment mark is formed in the peripheral portion. That is, in the photomask 108, a light-shielding film 108b made of a metal film such as chromium is formed on a transparent substrate 108a made of synthetic quartz or the like, and the light-transmitting portion described above is formed at a predetermined position of the light-shielding film 108b. A pattern 108c or the like is formed. Here, since positive type photosensitive resin is used, the pattern 108c of the photomask 108 is constituted by a light transmitting portion. On the other hand, when using a negative photosensitive resin, for example, a mask having a pattern made of a light shielding body made of a metal film such as chromium may be used on a transparent substrate made of synthetic quartz or the like. .

At the time of exposure, the pattern formation surface of the photomask 108 is placed close to the formation surface of the photosensitive resin film 107. At this time, the relative positional relationship between the substrate 101 and the photomask 108 is set to a predetermined state by setting the positional relationship between the substrate alignment mark formed on the substrate 101 and the mask alignment mark described above to a predetermined state. As a result, the position of the pattern narrower than the metal wiring 106 formed on the photomask 108 overlaps the position of the photosensitive resin film 107 on the metal wiring 106. After performing the above alignment, the latent image 110 is formed by irradiating the ultraviolet ray 109 from the surface of the photomask 108 where the pattern is not formed and transferring the pattern to the photosensitive resin film 107. At that time, the ultraviolet output and the exposure time are determined so that the photosensitive resin film 107 in the latent image 110 portion receives a predetermined exposure amount.

Next, development processing is performed. The development process is a process of removing the photosensitive resin film 107 on which the latent image 110 is formed using a developer. In this case, in the first embodiment, since positive type CRC8300 is used as the photosensitive resin film 107, a developer of an alkaline aqueous solution is used. Note that a developer that is suitable for each photosensitive resin to be used is used. Here, FIG. 3 shows the relationship between the amount of film loss due to development and the exposure amount of the photosensitive resin film used in the first embodiment. FIG. 3 is a characteristic diagram showing the photosensitivity characteristics of the photosensitive resin film, where the horizontal axis is the exposure amount of the photosensitive resin film, the unit is mJ / cm ² , and the vertical axis is the film reduction amount per minute of development time. The unit is μm. According to the figure, since the film reduction amount occurs even when the exposure amount is zero, it can be seen that the unexposed portion is also etched with the developer, and the etching rate is about 1.2 μm per minute. Furthermore, it can be seen that the exposed resin portion is etched faster, and the etching rate varies depending on the exposure amount. Therefore, by setting the exposure amount and development conditions according to the undulations of the photosensitive resin film 107, the film thickness difference between the latent image portion and the unexposed portion and the etching rate difference are balanced, and a flat shape is realized by the development process. it can.

Next, a curing process is performed. The curing process is a process of curing the resin and removing the photosensitive agent by hard baking the positive photosensitive resin. In the case of CRC8300, baking is performed at 150 ° C. for 30 minutes in a nitrogen atmosphere, followed by baking at 310 to 320 ° C. for 30 minutes. Here, FIG. 4 shows the curing temperature dependence of the film reduction amount in the curing process of the photosensitive resin film used in the first embodiment. In the figure, the horizontal axis represents the curing treatment temperature of the photosensitive resin film, the unit is ° C., and the vertical axis represents the amount of film reduction due to the aforementioned curing treatment, and the unit is μm. It can be seen from this that the film is reduced by the curing treatment. In consideration of the above characteristics, by determining the film thickness of the photosensitive resin film 107, the flat insulating layer 112 can be obtained as shown in FIG. . Specifically, the film thickness obtained by adding the decrease in the curing process and the decrease in the development to the thickness of the insulating layer 112 so that the film thickness of the unexposed portion finally becomes the thickness of the insulating layer 112. The photosensitive resin film 107 is applied and formed. In the first embodiment, the coating is formed on the assumption that the thickness is reduced by 2.0 μm.

As described above, it can be seen that the surface of the insulating layer can be easily processed flat by using the photosensitive resin film. In the first embodiment, a positive photosensitive resin is used. However, a negative photosensitive resin obtained by adding a negative photosensitive agent to polyimide or benzocyclobutene (BCB) is used. Also good. In this way, when using a negative photosensitive resin, the relationship between the light shielding portion and the transmissive portion of the mask pattern described above may be reversed. In this case, the pattern of the light shielding part of the mask is a pattern having a width wider than that of the metal wiring. However, in this method using a negative photosensitive resin, the etching rate of the photosensitive resin on the wiring is controlled by developing conditions such as a developing time. For this reason, when this method is compared with the method using the positive photosensitive resin as in the first embodiment described above, the controllability of the etching rate is positive photosensitive that can combine the exposure amount and the development conditions. It is better to use a conductive resin.

Next, a second embodiment of the present invention will be described with reference to FIGS. In the second embodiment, multilayer wiring is formed on a substrate. Here, a case where a two-layer wiring having a gap with the substrate is formed on the substrate will be described as an example. Here, the step of forming the first metal wiring 106 on the substrate 101 having the insulating layer 102 and the step of planarizing the surface of the insulating layer 112 covering the metal wiring 106 are the same as those in the first embodiment. Since it is the same as FIG. 1R> 1 (a) to (d) and FIGS. 2 (e) to (f) described above, description thereof is omitted. In this case, the difference from the first embodiment is that the photosensitive resin film 107 is etched so that the surface of the first-layer metal wiring 106 is exposed by the development process and the curing process. As a method for exposing the surface of the metal wiring 106, a decrease in the curing process and a decrease in development so that the film thickness of the unexposed portion of the photosensitive resin film 107 finally becomes the thickness of the metal wiring 106. A method is used in which a photosensitive resin film 107 having a thickness obtained by adding a portion to the thickness of the metal wiring 106 is applied. In this way, a substrate 101 is obtained in which the insulating layer 112 is planarized and the surface of the first-layer metal wiring 106 is exposed as shown in FIG.

Next, as shown in FIG. 5A, a metal film 203 made of chromium is thinly formed to a thickness of about 0.1 μm on the surface of the substrate 101 using a vapor deposition method. A seed film 204 made of is formed as thin as about 0.1 μm by vapor deposition. Next, as shown in FIG. 5B, a photoresist 205 is applied on the seed film 204 to a thickness of about 5.0 μm and patterned by photolithography to remove the photoresist 205 from the wiring structure forming portion. Then, the seed film 204 is exposed.

Next, as shown in FIG. 5C, a wiring material film made of gold is formed on the exposed seed film 204 to a thickness of about 5.0 μm by electrolytic plating, and then the photoresist 205 is peeled off. A second layer metal wiring 206 is formed. Next, as shown in FIG. 6D, the unnecessary seed film 204 and metal film 203 are removed in this order by wet etching. Since the processing liquid and the processing method used for removing the seed film 204 and the metal film 203 are the same as those described in the first embodiment, description thereof is omitted. Next, the insulating layer 112 is removed using oxygen plasma. As a result, a two-layer wiring having a gap with the substrate as shown in FIG. 5E is formed. Needless to say, the insulating layer 112 may be left without being removed depending on the purpose.

By the way, when an organic resin layer is used as an interlayer insulating film, it is possible to increase the thickness because the film stress is small and it is difficult for cracks to occur. Can be formed to be 10 μm or more. Therefore, according to the method of the present invention, the metal wiring and the insulating layer can be flattened and thickened by using a plating method and an organic insulating film such as photosensitive polyimide. Accordingly, the metal wiring can be used as a structure such as a beam, and the structure of the semiconductor sensor or the micromachine device can be easily realized. In the present invention, the temperature of the positive photosensitive resin curing process (about 250 to 350 ° C.) can be set to the maximum temperature of the wiring formation process. There is an effect that the application range for the type of (wiring metal) is wide.

In the above embodiment, when forming a latent image in the positive photosensitive resin, the mask and the photosensitive resin are arranged close to each other and exposed at a magnification of 1: 1, so-called contact (contact) or proximity ( Although the soft contact exposure method is used, it goes without saying that a reduction projection exposure method may be used as the exposure method. Further, for example, the presence or absence of the insulating layer 102 on the substrate 101 shown in FIG. 1 is not directly related to the present invention. That is, when the metal wiring is not used as the electrical wiring but is used as the structure, the insulating layer 102 may not be provided. The type and shape of the substrate or the presence or absence of an integrated circuit is not directly related to the present invention. Further, the application of the photosensitive resin is not limited to spin coating, and other methods such as a spray coating method may be used as long as they can be applied to a uniform thickness. Further, multilayer wiring can be easily formed by appropriately changing the mask pattern and repeating the above-described process according to the present invention.

It is explanatory drawing which shows the manufacturing method of the wiring structure in 1st Embodiment of this invention. FIG. 2 is an explanatory diagram illustrating the method for manufacturing the wiring structure according to the first embodiment of the present invention continued from FIG. 1. It is a characteristic view which shows the photosensitivity of the positive photosensitive resin used in 1st Embodiment. It is a characteristic view which shows the temperature characteristic of the positive photosensitive resin used in 1st Embodiment. It is explanatory drawing which shows the manufacturing method of the wiring structure in 2nd Embodiment of this invention. FIG. 6 is an explanatory diagram illustrating the method for manufacturing the wiring structure according to the second embodiment of the invention, following FIG. 5. It is explanatory drawing which shows the manufacturing method of the wiring structure by the conventional CMP method. It is explanatory drawing which shows the manufacturing method of the wiring structure by the conventional etch back method. It is explanatory drawing which shows the manufacturing method of the wiring structure by the conventional planarization method which combined the exposure technique.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 ... Board | substrate, 102, 112 ... Insulating layer, 103, 203 ... Metal film, 104, 204 ... Seed film, 105, 205 ... Photoresist, 106, 206 ... Metal wiring, 107 ... Photosensitive resin film, 108 ... Photomask 109 ... ultraviolet rays, 110 ... latent images.

Claims (9)

Forming a metal wiring on the substrate;
A thickness obtained by adding a predetermined thickness to the thickness of the metal wiring, which is filled between the metal wirings formed on the substrate and covers the metal wiring and made of a positive photosensitive organic material. Forming the step,
Forming a latent image on the resin layer by irradiating the resin layer with a predetermined amount of ultraviolet light for a predetermined time on a region that overlaps the metal wiring of the resin layer and is narrower than the width of the metal wiring;
Flattening the undulation of the resin layer by developing the resin layer having the latent image under a predetermined condition;
A method of manufacturing a wiring structure, comprising: a step of heat-treating the developed resin layer to a predetermined temperature so that the photosensitivity is lost and cured. In the manufacturing method of the wiring structure according to claim 1,
A method of manufacturing a wiring structure, wherein the resin layer is flattened by the development process and the heat treatment and processed to a thickness that exposes a surface of the metal wiring. Forming a metal wiring on the substrate;
A resin layer made of a photosensitive organic material that fills between the metal wirings formed on the substrate and covers the metal wirings is formed by adding a predetermined thickness to the thickness of the metal wirings. And a process of
Forming a latent image on the resin layer by irradiating a predetermined region of the resin layer with a predetermined amount of ultraviolet light for a predetermined time; and
Flattening the undulation of the resin layer by developing the resin layer having the latent image under a predetermined condition;
A step of curing the resin layer that has been subjected to the development treatment by heat-treating the resin layer to a predetermined temperature, thereby eliminating the photosensitivity; and
With
The predetermined thickness is set so that the surface of the metal wiring is exposed while the resin layer is flattened by development processing under the predetermined condition and heat treatment at the predetermined temperature,
further,
Forming a metal wiring of the next layer so as to be in direct contact with the metal wiring on the resin layer and on the exposed metal wiring;
And a step of removing the resin layer. Forming a metal wiring on the substrate;
A thickness obtained by adding a predetermined thickness to the thickness of the metal wiring, which is filled between the metal wirings formed on the substrate and covers the metal wiring, and is made of a positive photosensitive organic material. Forming the step,
Forming a latent image on the resin layer by irradiating the resin layer with a predetermined amount of ultraviolet light for a predetermined time on a region that overlaps the metal wiring of the resin layer and is narrower than the width of the metal wiring;
Flattening the undulation of the resin layer by developing the resin layer having the latent image under a predetermined condition;
A step of curing the resin layer that has been subjected to the development treatment by heat-treating the resin layer to a predetermined temperature, thereby eliminating the photosensitivity;
With
The predetermined thickness is set so that the surface of the metal wiring is exposed while the resin layer is flattened by development processing under the predetermined condition and heat treatment at the predetermined temperature,
further,
Forming a metal wiring of the next layer so as to be in direct contact with the metal wiring on the resin layer and on the exposed metal wiring;
And a step of removing the resin layer. Forming a metal wiring on the substrate;
A thickness obtained by adding a first predetermined thickness to the thickness of the metal wiring, which is filled between the metal wirings formed on the substrate and covers the metal wiring, and made of a photosensitive organic material. Forming the step,
Forming a latent image on the resin layer by irradiating the first predetermined region of the resin layer with a first predetermined amount of ultraviolet light for a first predetermined time;
Flattening the undulation of the resin layer by developing the resin layer having the latent image under a first predetermined condition;
A step of curing the resin layer that has been subjected to the development treatment so as to lose photosensitivity by heat treatment to a first predetermined temperature; and
With
By the development process under the first predetermined condition and the heat treatment at the first predetermined temperature, the resin layer is flattened and the first wiring layer has a thickness that exposes the surface of the metal wiring. The predetermined thickness of is set,
further,
(A) forming a metal wiring of the next layer so as to be in direct contact with the metal wiring on the resin layer and the exposed metal wiring;
(B) forming a resin layer of the next layer made of an organic material having photosensitivity on the resin layer with a thickness obtained by adding a second predetermined thickness to the thickness of the metal wiring of the next layer;
(C) forming a latent image on the resin layer of the next layer by irradiating a second predetermined region of the resin layer of the next layer with a second predetermined amount of ultraviolet light for a second predetermined time;
(D) a step of flattening the undulation of the resin layer of the next layer by developing the resin layer of the next layer having the latent image under a second predetermined condition;
(E) The subsequent resin layer is subjected to a heat treatment at a second predetermined temperature so that the photosensitivity is lost and cured to form the following layers (a) to (e): With each process,
By the development process under the second predetermined condition and the heat treatment at the second predetermined temperature, the resin layer of the next layer is flattened and the thickness of the surface of the metal wiring of the next layer is exposed. The second predetermined thickness is set as follows,
After the metal wiring of a predetermined number of layers is formed by repeating the steps (a) to (e) for forming the next layer a predetermined number of times,
further,
Forming a top metal wiring on the top resin layer and on the exposed top metal wiring so as to be in direct contact with the top metal wiring;
And a step of removing all of the resin layer and the resin layer of the next layer. Forming a metal wiring on the substrate;
A resin layer made of a positive photosensitive organic material that fills between the metal wirings formed on the substrate and covers the metal wirings has a first predetermined thickness as the thickness of the metal wirings. Forming with the added thickness;
Forming a latent image on the resin layer by irradiating the resin layer with a first predetermined amount of ultraviolet light for a first predetermined time on a region overlapping the metal wiring and narrower than the width of the metal wiring;
Flattening the undulation of the resin layer by developing the resin layer having the latent image under a first predetermined condition;
A step of curing the resin layer that has been subjected to the development treatment so as to lose photosensitivity by heat treatment to a first predetermined temperature; and
With
By the development process under the first predetermined condition and the heat treatment at the first predetermined temperature, the resin layer is flattened and the first wiring layer has a thickness that exposes the surface of the metal wiring. The predetermined thickness of is set,
further,
(A) forming a metal wiring of the next layer so as to be in direct contact with the metal wiring on the resin layer and the exposed metal wiring;
(B) forming a second resin layer made of an organic material having positive photosensitivity on the resin layer with a thickness obtained by adding a second predetermined thickness to the thickness of the metal wiring of the next layer; When,
(C) The second predetermined amount of ultraviolet light is irradiated to a region that overlaps the metal wiring of the next layer of the resin layer of the next layer and is narrower than the width of the metal wiring of the next layer for the second predetermined time Forming a latent image on the resin layer of the layer;
(D) a step of flattening the undulation of the resin layer of the next layer by developing the resin layer of the next layer having the latent image under a second predetermined condition;
(E) The subsequent resin layer is subjected to a heat treatment at a second predetermined temperature so that the photosensitivity is lost and cured, and the following layers are formed: (a) to (e) With each process,
By the development process under the second predetermined condition and the heat treatment at the second predetermined temperature, the resin layer of the next layer is flattened and has a thickness that exposes the surface of the metal wiring of the next layer. The second predetermined thickness is set as follows,
After forming a predetermined number of metal wirings by repeating the steps (a) to (e) for forming the next layer a predetermined number of times
further,
Forming a top metal wiring on the top resin layer and on the exposed top metal wiring so as to be in direct contact with the top metal wiring;
And a step of removing all of the resin layer and the resin layer of the next layer. In the manufacturing method of the wiring structure of any one of Claims 3-6,
The process for removing all of the resin layer and the next resin layer uses oxygen plasma for removing the resin layer. In the manufacturing method of the wiring structure of Claims 1-7,
The method of manufacturing a wiring structure, wherein the organic material is a resin using polyimide as a substrate. In the manufacturing method of the wiring structure of Claims 1-7,
The method for manufacturing a wiring structure, wherein the organic material is a resin using a polybenzoxazole precursor as a substrate.