JP2005353959A - Electroless plating method - Google Patents

Electroless plating method Download PDF

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JP2005353959A
JP2005353959A JP2004175283A JP2004175283A JP2005353959A JP 2005353959 A JP2005353959 A JP 2005353959A JP 2004175283 A JP2004175283 A JP 2004175283A JP 2004175283 A JP2004175283 A JP 2004175283A JP 2005353959 A JP2005353959 A JP 2005353959A
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wafer
electroless
electroless plating
terminal
substrate
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Hideyuki Kobayashi
秀行 小林
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electroless plating method for stably forming an electroless plating layer covering whole terminal faces of respective electrode terminals, even if electroless plating is preformed on the terminal faces of the electrode terminals formed on one face side of a wafer formed of silicon under illumination. <P>SOLUTION: When electroless plating is performed on the terminal faces of the electrode terminals 12 formed on one face side of the wafer 10 formed of silicon, and the electroless plating layer 18 is formed; a metallic film 16 is formed on the whole other face side of the wafer 10. Electroless plating is performed on the terminal faces of the electrode terminals 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は無電解めっき方法に関し、更に詳細にはシリコンから成るウェーハ又は基板の一面側に形成された電極端子の端子面又は前記電極端子に一端が接続された再配線の他端に形成されたパッド部のパッド面に無電解めっきを施して無電解めっき層を形成する無電解めっき方法に関する。   The present invention relates to an electroless plating method, and more particularly, formed on the terminal surface of an electrode terminal formed on one surface side of a wafer or substrate made of silicon or the other end of a rewiring having one end connected to the electrode terminal. The present invention relates to an electroless plating method for forming an electroless plating layer by performing electroless plating on a pad surface of a pad portion.

近年、半導体装置の高密度実装化の要求に伴い、フリップチップ方式の実装手法が採用されるようになった。かかる実装手段を採用する半導体装置では、半導体素子の電極形成面に形成された電極端子又は半導体素子の電極端子に一端が接続された再配線の他端に形成されたパッド部のパッド面の各々に、はんだボールを搭載して外部接続端子を形成している。
通常、半導体素子の電極端子はアルミ製であるため、はんだボールをアルミ製の電極端子に搭載しても、はんだボールは電極端子に接合され難いため、図３に示す様に、アルミ製の電極端子の端子面に無電解ニッケルめっきによって無電解ニッケル層を形成した後、はんだボールを搭載することが行なわれている。
つまり、シリコンから成る基板１００には、図３（ａ）に示す様に、基板１００の一面側には、アルミ製の電極端子１０２，１０２・・が形成されており、電極端子１０２，１０２・・を除く基板１００の一面側はパッシベイション膜１０４で覆われている。
かかる電極端子１０２，１０２・・の各端子面には、無電解ニッケルめっきによって無電解ニッケル層１０６を形成する［図３（ｂ）の工程］。
次いで、この無電解ニッケル層１０６，１０６・・の各々に、はんだボールを搭載してリフローを施すことによって、図３（ｃ）に示す様に、電極端子１０２，１０２・・の各々に外部接続端子１０８を形成できる。 In recent years, with the demand for high-density mounting of semiconductor devices, a flip-chip mounting method has been adopted. In the semiconductor device employing such mounting means, each of the electrode surface formed on the electrode forming surface of the semiconductor element or the pad surface of the pad portion formed on the other end of the rewiring having one end connected to the electrode terminal of the semiconductor element In addition, solder balls are mounted to form external connection terminals.
Usually, since the electrode terminal of the semiconductor element is made of aluminum, even if the solder ball is mounted on the aluminum electrode terminal, the solder ball is difficult to be joined to the electrode terminal. Therefore, as shown in FIG. A solder ball is mounted after an electroless nickel layer is formed on the terminal surface of the terminal by electroless nickel plating.
That is, the substrate 100 made of silicon has aluminum electrode terminals 102, 102,... Formed on one surface side of the substrate 100 as shown in FIG. One side of the substrate 100 except for “•” is covered with a passivation film 104.
On each terminal surface of the electrode terminals 102, 102,..., An electroless nickel layer 106 is formed by electroless nickel plating [step of FIG.
Next, solder balls are mounted on each of the electroless nickel layers 106, 106,... And subjected to reflow, so that external connections are made to the electrode terminals 102, 102,... As shown in FIG. Terminal 108 can be formed.

しかし、基板１００に形成された複数個の外部接続端子１０２，１０２・・には、図４に示す様に、電極端子１０２の端子面に無電解ニッケルめっき層１０６の未着部分が存在する場合がある。この場合、形成した外部接続端子１０８の高さ等にバラツキが大きく、不良品となり易い。
この様に、電極端子１０２の端子面に無電解ニッケルめっき層１０６の未着部分は、無電解ニッケルめっきを照明の下で行なったときに発生し易いことから、下記特許文献１に記載されている様に、シリコンから成る基板１００に惹起される光起電力効果によるものと考えられる。
かかる起電力効果を防止しつつ、シリコンから成る基板１００に無電解めっきを施す手段としては、特許文献１には、遮光雰囲気中でシリコンから成る基板１００に無電解めっきを施すことが提案されている。
特開２０００−１５０４２２号公報（〔０００５〕〜〔００１１〕） However, when a plurality of external connection terminals 102, 102,... Formed on the substrate 100 have an electroless nickel plating layer 106 unattached portion on the terminal surface of the electrode terminal 102 as shown in FIG. There is. In this case, the height of the formed external connection terminal 108 varies greatly, and it tends to be a defective product.
As described above, the portion where the electroless nickel plating layer 106 is not deposited on the terminal surface of the electrode terminal 102 is likely to occur when electroless nickel plating is performed under illumination. Thus, it is considered to be due to the photovoltaic effect induced in the substrate 100 made of silicon.
As a means for performing electroless plating on the substrate 100 made of silicon while preventing such an electromotive force effect, Patent Document 1 proposes performing electroless plating on the substrate 100 made of silicon in a light-shielding atmosphere. Yes.
JP 2000-150422 A ([0005] to [0011])

特許文献１で提案されている様に、遮光雰囲気中でシリコンから成る基板１００に無電解ニッケルめっきを施すことによって、電極端子１０２，１０２・・の各端子面に無電解ニッケルめっき層１０６の未着部分が形成されることを可及的に防止できる。
しかし、無電解ニッケルめっきの全操作を遮光雰囲気中で完全自動で行なうことは極めて困難であって、基板１００の大きさ、電極端子１０２，１０２・・の数やパターン等が変更された場合には、いずれかの操作を手動で照明下で行なわざるを得ない。
かかる照明を、紫外線領域をカットした照明、例えばナトリウムランプ等のイエローランプを用いた照明としても、電極端子１０２，１０２・・の各端子面に無電解ニッケルめっき層１０６の未着部分が形成されることがある。
更に、最近は、一枚のウェーハに複数個の半導体装置を作り込むことが行なわれており、ウェーハに形成された電極端子１０２，１０２・・にも、無電解ニッケルめっきを施すことが必要である。
また、電極端子１０２，１０２・・の各々に一端が接続された再配線の他端に形成されたパッド部にも、無電解めっきを施して外部接続端子を搭載することが行なわれている。
そこで、本発明の課題は、シリコンから成るウェーハ又は基板の一面側に形成された電極端子の端子面又は電極端子に一端が接続された再配線の他端に形成されたパッド部のパッド面に施す無電解めっきを照明下で施しても、各電極端子の端子面や各パッド部のパッド面の全面を覆う無電解めっき層を安定して形成し得る無電解めっき方法を提供することにある。 As proposed in Patent Document 1, electroless nickel plating is applied to the substrate 100 made of silicon in a light-shielding atmosphere, so that the electroless nickel plating layer 106 is not applied to the terminal surfaces of the electrode terminals 102, 102. It is possible to prevent the formation of the wearing portion as much as possible.
However, it is extremely difficult to perform all operations of electroless nickel plating fully automatically in a light-shielding atmosphere, and when the size of the substrate 100, the number of electrode terminals 102, 102,. Must perform either operation manually under illumination.
Even when such illumination is performed by cutting off the ultraviolet region, for example, illumination using a yellow lamp such as a sodium lamp, unattached portions of the electroless nickel plating layer 106 are formed on the terminal surfaces of the electrode terminals 102, 102. Sometimes.
Furthermore, recently, a plurality of semiconductor devices have been fabricated on a single wafer, and it is necessary to apply electroless nickel plating to the electrode terminals 102, 102,... Formed on the wafer. is there.
Further, an external connection terminal is mounted on the pad portion formed at the other end of the rewiring having one end connected to each of the electrode terminals 102, 102,.
Accordingly, an object of the present invention is to provide a terminal surface of an electrode terminal formed on one side of a wafer or substrate made of silicon or a pad surface of a pad portion formed on the other end of a rewiring having one end connected to the electrode terminal. To provide an electroless plating method capable of stably forming an electroless plating layer covering the entire terminal surface of each electrode terminal and the pad surface of each pad portion even if the electroless plating is performed under illumination. .

本発明者は、前記課題を解決すべく検討した結果、予め基板１００の他面側に無電解ニッケルめっきによってニッケル皮膜を形成した後、基板１００の一面側に無電解ニッケルめっきを施すことによって、照明下でも基板１００の電極端子１０２，１０２・・の各端子面に安定して無電解ニッケルめっき層が形成されることを見出し、本発明に到達した。
すなわち、本発明は、シリコンから成るウェーハ又は基板の一面側に形成された電極端子の端子面又は前記電極端子に一端が接続された再配線の他端に形成されたパッド部のパッド面に無電解めっきを施して無電解めっき層を形成する際に、該ウェーハ又は基板の他面側の全面に金属皮膜を形成した後、前記端子面又はパッド面に無電解めっきを施すことを特徴とする無電解めっき方法にある。 As a result of studying to solve the above problems, the inventor previously formed a nickel film on the other surface side of the substrate 100 by electroless nickel plating, and then performed electroless nickel plating on one surface side of the substrate 100, The present inventors have found that an electroless nickel plating layer can be stably formed on each terminal surface of the electrode terminals 102, 102,.
That is, the present invention is not applied to the terminal surface of the electrode terminal formed on one surface side of the wafer or substrate made of silicon or the pad surface of the pad portion formed on the other end of the rewiring having one end connected to the electrode terminal. When forming an electroless plating layer by performing electroplating, after forming a metal film on the entire other surface of the wafer or substrate, electroless plating is performed on the terminal surface or pad surface. The electroless plating method.

かかる本発明において、ウェーハ又は基板の他面側及び側面側の全面に金属皮膜を形成することによって、基板の電極端子の各端子面やパッド部の各パッド面に、更に一層安定して無電解めっき層を形成できる。
この金属皮膜として、端子面又はパッド面に形成する無電解めっき層の金属と同種金属から成る金属皮膜を形成することによって、無電解めっき浴の管理等を容易に行なうことができる。
更に、金属皮膜を、めっきによって形成することが、金属皮膜の形成コスト等の観点から有利である。 In the present invention, by forming a metal film on the entire other surface side and side surface of the wafer or substrate, the electroless surface is more stably formed on each terminal surface of the electrode terminal of the substrate and each pad surface of the pad portion. A plating layer can be formed.
By forming a metal film made of the same metal as the metal of the electroless plating layer formed on the terminal surface or the pad surface as the metal film, the electroless plating bath can be easily managed.
Furthermore, it is advantageous from the viewpoint of the formation cost of the metal film to form the metal film by plating.

シリコンから成る基板やウェーハの電極端子又はパッド部が形成された一面側に光が照射されると、光起電力効果によって電極端子間又はパッド部間に電位差が生じる。かかる電位差が生じた状態で無電解めっきを施すと、電極端子又はパッド部に無電解めっき層の未着部分が生じるものと考えられる。
一方、シリコン面が露出している基板又はウェーハの他面側は、実質的にパッシベイション膜等で覆われている基板又はウェーハの一面側に形成された端子面又はパッド面よりも格段に広い。このため、基板やウェーハの電極端子間又はパッド部間の電位差は、シリコン面が露出している基板やウェーハの他面側の影響、例えば基板又はウェーハに無電解めっきを施す際に、基板又はウェーハの一面側と他面側との電位差が大きな影響を与えているものと推察される。
この点、本発明では、ウェーハ又は基板の他面側の全面に金属皮膜を形成した後、基板やウェーハの電極端子又はパッド部に無電解めっきを施す。このため、この無電解めっきの際に、基板又はウェーハの一面側と他面側との電位差を解消でき、基板やウェーハの電極端子間又はパッド部間の電位差を実質的に解消できる。
このため、基板又はウェーハの電極端子又はパッド部に無電解めっき層の未着部分が生じることを効果的に防止できる結果、均斉な外部接続端子が形成された半導体装置を得ることができる。 When light is irradiated on one surface of a silicon substrate or wafer on which electrode terminals or pad portions are formed, a potential difference is generated between electrode terminals or pad portions due to the photovoltaic effect. When electroless plating is performed in a state where such a potential difference is generated, it is considered that an unattached portion of the electroless plating layer is generated at the electrode terminal or the pad portion.
On the other hand, the other surface side of the substrate or wafer on which the silicon surface is exposed is markedly higher than the terminal surface or pad surface formed on the one surface side of the substrate or wafer substantially covered with a passivation film or the like. wide. For this reason, the potential difference between the electrode terminals of the substrate or the wafer or the pad portion is influenced by the influence of the other surface side of the substrate or the wafer on which the silicon surface is exposed, for example, when performing electroless plating on the substrate or wafer. It is assumed that the potential difference between the one surface side and the other surface side of the wafer has a great influence.
In this regard, in the present invention, after a metal film is formed on the entire other surface of the wafer or substrate, electroless plating is applied to the electrode terminals or pad portions of the substrate or wafer. For this reason, in this electroless plating, the potential difference between the one surface side and the other surface side of the substrate or wafer can be eliminated, and the potential difference between the electrode terminals or the pad portions of the substrate or wafer can be substantially eliminated.
Therefore, it is possible to effectively prevent the electroless plating layer from being formed on the electrode terminal or pad portion of the substrate or wafer. As a result, a semiconductor device in which uniform external connection terminals are formed can be obtained.

本発明に係る無電解めっき方法を施す対象は、光の照射によって光起電力効果が惹起されるシリコンから成るウェーハ又は基板である。
以下、シリコンから成るウェーハ（以下、単にウェーハと称することがある）について、図１に基いて説明する。
図１（ａ）に示すウェーハ１０の一面側には、複数個のアルミ製の電極端子１２，１２・・が形成されている。このウェーハ１０の一面側は、電極端子１２，１２・・を除いてパッシベイション膜１４によって覆われている。
かかるウェーハ１０の他面側及び側面側の全面には、金属皮膜１６を形成する［図１（ｂ）］。この金属皮膜１６は、蒸着、スパッタリングやめっきによって形成できるが、めっきによって形成することが経済的に有利である。
また、めっきによって金属皮膜１６を形成する際には、ウェーハ１０の一面側をマスクによって覆いつつ、ウェーハ１０を無電解めっき浴に浸漬することによって、ウェーハ１０の他面側及び側面側の全面に無電解めっきによる金属皮膜１６を形成できる。この無電解めっきによって形成した金属皮膜１６を更に厚くしたい場合には、金属皮膜１６を給電層とする電解めっきによって厚い金属皮膜１６を形成できる。
次いで、かかる金属皮膜１６が他面側及び側面側の全面に形成されたウェーハ１０を、蛍光灯等の通常の照明下において、無電解めっき浴に浸漬して、電極端子１２，１２・・の各端子面に無電解めっきを施し、無電解めっき層１８を形成する。
この無電解めっき層１８としては、無電解ニッケルめっき層又は無電解銅めっき層とすることが好ましく、無電解ニッケルめっき層又は無電解銅めっき層の表面に金めっき層が形成されていてもよい。 An object to which the electroless plating method according to the present invention is applied is a wafer or a substrate made of silicon in which a photovoltaic effect is induced by light irradiation.
Hereinafter, a wafer made of silicon (hereinafter sometimes simply referred to as a wafer) will be described with reference to FIG.
A plurality of aluminum electrode terminals 12, 12,... Are formed on one side of the wafer 10 shown in FIG. One side of the wafer 10 is covered with a passivation film 14 except for the electrode terminals 12, 12.
A metal film 16 is formed on the entire other surface side and side surface of the wafer 10 [FIG. 1B]. The metal film 16 can be formed by vapor deposition, sputtering, or plating, but it is economically advantageous to form the metal film 16 by plating.
Further, when the metal film 16 is formed by plating, the wafer 10 is immersed in an electroless plating bath while covering one surface side of the wafer 10 with a mask, so that the entire surface on the other surface side and side surface side of the wafer 10 is covered. The metal film 16 can be formed by electroless plating. When it is desired to make the metal film 16 formed by electroless plating thicker, the thick metal film 16 can be formed by electrolytic plating using the metal film 16 as a power feeding layer.
Next, the wafer 10 on which the metal film 16 is formed on the entire other side and side is immersed in an electroless plating bath under normal illumination such as a fluorescent lamp, and the electrode terminals 12, 12,. Electroless plating is performed on each terminal surface to form an electroless plating layer 18.
The electroless plating layer 18 is preferably an electroless nickel plating layer or an electroless copper plating layer, and a gold plating layer may be formed on the surface of the electroless nickel plating layer or the electroless copper plating layer. .

無電解めっき層１８とアルミ製の電極端子１２とが色彩を異にする場合、例えば無電解めっき層１８として無電解ニッケルめっき層を電極端子１２の端子面に形成した場合、電極端子１２の端子面に無電解ニッケルめっき層の未着部分が存在すると、電極端子１２の端子面の色彩がウェーハ１０の外側から見え、無電解ニッケルめっき層の未着部分を容易に発見できる。
しかし、図１（ｃ）に示す様に、ウェーハ１０の他面側及び側面側の全面に金属皮膜１６を形成したウェーハ１０では、無電解めっき層１８としての無電解ニッケルめっき層の未着部分を発見できなかった。
その後、ウェーハ１０の無電解めっき層１８，１８・・を形成した箇所に、はんだボールを搭載してリフローすることによって外部接続端子２０を形成できる［図１（ｄ）］。
尚、ウェーハ１０の他面側及び側面側の全面に形成した金属皮膜１６は、除去しなくてもよいが、研磨等によって除去してもよい。 When the electroless plating layer 18 and the aluminum electrode terminal 12 have different colors, for example, when an electroless nickel plating layer is formed on the terminal surface of the electrode terminal 12 as the electroless plating layer 18, the terminal of the electrode terminal 12 If there is an unattached portion of the electroless nickel plating layer on the surface, the color of the terminal surface of the electrode terminal 12 can be seen from the outside of the wafer 10, and the unattached portion of the electroless nickel plating layer can be easily found.
However, as shown in FIG. 1C, in the wafer 10 in which the metal film 16 is formed on the entire other surface side and side surface side of the wafer 10, the unattached portion of the electroless nickel plating layer as the electroless plating layer 18. Could not be found.
Thereafter, external connection terminals 20 can be formed by mounting solder balls on the portions of the wafer 10 where the electroless plating layers 18, 18,... Are formed and reflowing them [FIG. 1 (d)].
The metal film 16 formed on the entire other surface side and side surface of the wafer 10 may not be removed, but may be removed by polishing or the like.

図１に示す金属皮膜１６としては、任意の金属から成る金属皮膜１６を形成できるが、ウェーハ１０の電極端子１２，１２・・の各端子面に形成する無電解めっき層１８を形成する金属と同種金属によって金属皮膜１６を形成することによって、無電解めっき層１８を形成する無電解めっき浴の管理等を容易とすることができ好ましい。
このため、ニッケル又は銅から成る金属皮膜１６を形成することが好ましく、複数の金属層から成る金属皮膜１６を形成してもよい。
ここで、ニッケルから成る金属皮膜１６を無電解ニッケルめっきによって形成する際に、無電解ニッケルめっき浴としては、公知のものを用いることができ、例えば化学便覧「応用化学編Ｉプロセス編」第４１５頁表５．９３（日本化学会編、昭和６３年１１月１５日第２刷発行、丸善株式会社）に掲載されている無電解ニッケルめっき浴を用いることができる。
また、銅から成る金属皮膜１６を無電解銅めっきによって形成する際に、無電解銅めっき浴としては、公知のものを用いることができ、例えば化学便覧「応用化学編Ｉプロセス編」第４１５頁表５．９２（日本化学会編、昭和６３年１１月１５日第２刷発行、丸善株式会社）に掲載されている無電解銅めっき浴を用いることができる。 As the metal film 16 shown in FIG. 1, a metal film 16 made of an arbitrary metal can be formed, but a metal that forms the electroless plating layer 18 formed on each terminal surface of the electrode terminals 12, 12. By forming the metal film 16 with the same kind of metal, it is preferable because management of the electroless plating bath for forming the electroless plating layer 18 can be facilitated.
For this reason, it is preferable to form the metal film 16 made of nickel or copper, and the metal film 16 made of a plurality of metal layers may be formed.
Here, when the metal film 16 made of nickel is formed by electroless nickel plating, a known electroless nickel plating bath can be used. For example, Chemical Handbook "Applied Chemistry I Process I" No. 415 An electroless nickel plating bath described in Table 5.93 (Edited by The Chemical Society of Japan, November 15, 1988, Second Printing, Maruzen Co., Ltd.) can be used.
Further, when the metal film 16 made of copper is formed by electroless copper plating, a known electroless copper plating bath can be used. For example, Chemical Handbook "Application Chemistry I Process", page 415 Electroless copper plating baths listed in Table 5.92 (Edited by The Chemical Society of Japan, November 15, 1988, second printing, Maruzen Co., Ltd.) can be used.

図１では、電極端子１２の端子面に外部接続端子２０を形成しているが、図２に示す様に、電極端子１２に一端が接続された再配線２２の他端に形成されたパッド部２２ａのパッド面に外部接続端子２０を形成する場合にも、本発明を適用できる。
つまり、図２に示す再配線２２及びパッド部２２ａは、通常、銅によって形成されており、再配線２２はパッド部２２ａを除いてレジスト２４によって覆われている。かかるパッド部２２ａのパッド面に外部接続端子２０を形成する際には、先ず、ウェーハ１０の他面側及び側面側の全面に金属皮膜１６を形成した後、パッド部２２ａのパッド面に無電解めっき層１８を形成し、必要に応じて金めっき層を形成した後、はんだボールを搭載してリフローすることによって外部接続端子２０を形成できる。
以上、説明してきた図１及び図２においては、シリコンから成るウェーハ１０を用いていたが、シリコンから成る基板を用いることができ、置換めっきも採用できる。
また、ウェーハ１０又は基板の他面側の面積は、ウェーハ１０又は基板の一面側に無電解めっき層１８を形成する、電極端子１２の端子面又は電極端子１２に一端が接続された再配線２２の他端に形成されたパッド部２２ａのパッド面の合計面積に比較して著しく大きい。このため、ウェーハ１０又は基板の他面側のみに金属皮膜１６を形成しても、ウェーハ１０又は基板の電極端子１２，１２・・の各端子面又はパッド部２２ａ，２２ａ・・の各パッド面を覆う無電解めっき層１８を形成できる。 In FIG. 1, the external connection terminal 20 is formed on the terminal surface of the electrode terminal 12, but as shown in FIG. 2, the pad portion formed on the other end of the rewiring 22 having one end connected to the electrode terminal 12. The present invention can also be applied to the case where the external connection terminal 20 is formed on the pad surface 22a.
That is, the rewiring 22 and the pad portion 22a shown in FIG. 2 are normally formed of copper, and the rewiring 22 is covered with the resist 24 except for the pad portion 22a. When forming the external connection terminals 20 on the pad surface of the pad portion 22a, first, the metal film 16 is formed on the entire other surface side and side surface side of the wafer 10, and then electroless is applied to the pad surface of the pad portion 22a. After forming the plating layer 18 and forming a gold plating layer as required, the external connection terminals 20 can be formed by mounting solder balls and performing reflow.
1 and 2 described above, the wafer 10 made of silicon is used, but a substrate made of silicon can be used, and displacement plating can also be adopted.
Further, the area of the wafer 10 or the other side of the substrate is the rewiring 22 having one end connected to the terminal surface of the electrode terminal 12 or the electrode terminal 12 that forms the electroless plating layer 18 on one side of the wafer 10 or the substrate. This is significantly larger than the total area of the pad surface of the pad portion 22a formed at the other end. Therefore, even if the metal film 16 is formed only on the other surface side of the wafer 10 or the substrate, the terminal surfaces of the electrode terminals 12, 12,... Of the wafer 10 or the substrate or the pad surfaces of the pad portions 22a, 22a,. Can be formed.

一面側に複数個のアルミ製の電極端子が形成されたシリコンから成るウェーハを、その一面側にマスク板を装着して、無電解ニッケルめっき浴中に浸漬し、ウェーハの他面側及び側面側の全面にニッケル皮膜を形成した後、このニッケル皮膜の表面に無電解金めっきによって金層を形成した。
次いで、このウェーハを、蛍光灯による照明の下で、無電解ニッケルめっき浴（硫酸ニッケル：３０ｇ／リットル、次亜燐酸ナトリウム：１５ｇ／リットル、クエン酸ナトリウム：３０ｇ／リットル）に浸漬して、電極端子の各々に無電解ニッケルめっきを施した。
無電解ニッケルめっきを施した後、ウェーハの一面側の各電極端子に形成された無電解ニッケルめっき層について検査したが、無電解ニッケルめっき層の未着部分、めっき密着不良及びめっき変色は発見できなかった。 A wafer made of silicon having a plurality of aluminum electrode terminals formed on one surface side is immersed in an electroless nickel plating bath with a mask plate mounted on the one surface side, and the other surface side and side surface side of the wafer. After forming a nickel film on the entire surface, a gold layer was formed on the surface of the nickel film by electroless gold plating.
Next, this wafer was immersed in an electroless nickel plating bath (nickel sulfate: 30 g / liter, sodium hypophosphite: 15 g / liter, sodium citrate: 30 g / liter) under illumination with a fluorescent lamp, and an electrode Electroless nickel plating was applied to each of the terminals.
After electroless nickel plating, the electroless nickel plating layer formed on each electrode terminal on one side of the wafer was inspected, but the unattached part of the electroless nickel plating layer, poor plating adhesion, and discoloration of the plating could be found. There wasn't.

比較例１Comparative Example 1

実施例１において、ナトリウムランプの照明下において、ウェーハの他面側を露出した状態で無電解ニッケルめっきを施した他は、実施例１と同様にして、ウェーハの電極端子の各々に無電解ニッケルめっきを施した。
無電解ニッケルめっきを施した後、ウェーハの一面側の各電極端子に形成された無電解ニッケルめっき層について検査したところ、無電解ニッケルめっき層の未着部分は、ウェーハに形成された全電極端子数に対して約２５％も存在した。 In Example 1, electroless nickel plating was performed on each electrode terminal of the wafer in the same manner as in Example 1 except that electroless nickel plating was performed with the other side of the wafer exposed under the illumination of a sodium lamp. Plating was applied.
After the electroless nickel plating, the electroless nickel plating layer formed on each electrode terminal on one side of the wafer was inspected. The unattached portion of the electroless nickel plating layer was all electrode terminals formed on the wafer. There was about 25% of the number.

一面側に複数個のアルミ製の電極端子が形成されたシリコンから成るウェーハを、その一面側にマスク板を装着して、パラジウム（Ｐｄ）含有溶液に浸漬して前処理を施した。
更に、他面側及び側面側の全面に前処理を施したウェーハを無電解銅めっき浴中に浸漬し、ウェーハの他面側及び側面側の全面に銅皮膜を形成した。
次いで、このウェーハを、蛍光灯による照明の下で、無電解銅めっき浴（硫酸銅：７ｇ／リットル、ロッセル塩：２０ｇ／リットル、ホルマリン：２５ｍｌ／リットル、水酸化ナトリウム：５ｇ／リットル、炭酸ナトリウム：２ｇ／リットル）に浸漬して、電極端子の各々に無電解銅めっきを施した。
無電解銅めっきを施した後、ウェーハの一面側の各電極端子に形成された無電解銅めっき層について検査したが、無電解銅めっき層の未着部分、めっき密着不良及びめっき変色は発見できなかった。 A wafer made of silicon having a plurality of aluminum electrode terminals formed on one surface side was pretreated by mounting a mask plate on one surface side and dipping in a palladium (Pd) -containing solution.
Furthermore, the wafer which performed the pre-processing on the other surface side and the whole side surface side was immersed in the electroless copper plating bath, and the copper film was formed in the whole other surface side and side surface side of a wafer.
The wafer was then subjected to electroless copper plating bath (copper sulfate: 7 g / liter, Rossell salt: 20 g / liter, formalin: 25 ml / liter, sodium hydroxide: 5 g / liter, sodium carbonate under illumination with a fluorescent lamp. : 2 g / liter), and each of the electrode terminals was subjected to electroless copper plating.
After electroless copper plating, the electroless copper plating layer formed on each electrode terminal on one side of the wafer was inspected. There wasn't.

本発明に係る無電解めっき方法の一例を説明する説明図である。It is explanatory drawing explaining an example of the electroless-plating method which concerns on this invention. 本発明に係る無電解めっき方法の他の例を説明する説明図である。It is explanatory drawing explaining the other example of the electroless-plating method which concerns on this invention. 従来の方法を説明する説明図である。It is explanatory drawing explaining the conventional method. 従来の方法で形成された無電解めっき層の状態を説明する説明図である。It is explanatory drawing explaining the state of the electroless-plating layer formed with the conventional method.

符号の説明Explanation of symbols

１０ ウェーハ
１２ 電極端子
１４ パッシベイション膜
１６ 金属皮膜
１８ 無電解めっき層
２０ 外部接続端子
２２ａ パッド部
２２ 再配線
２４ レジスト DESCRIPTION OF SYMBOLS 10 Wafer 12 Electrode terminal 14 Passivation film | membrane 16 Metal film 18 Electroless plating layer 20 External connection terminal 22a Pad part 22 Rewiring 24 Resist

Claims (4)

シリコンから成るウェーハ又は基板の一面側に形成された電極端子の端子面又は前記電極端子に一端が接続された再配線の他端に形成されたパッド部のパッド面に無電解めっきを施して無電解めっき層を形成する際に、
該ウェーハ又は基板の他面側の全面に金属皮膜を形成した後、前記端子面又はパッド面に無電解めっきを施すことを特徴とする無電解めっき方法。 Electroless plating is applied to the terminal surface of the electrode terminal formed on one side of the wafer or substrate made of silicon or the pad surface of the pad portion formed at the other end of the rewiring connected to the electrode terminal at one end. When forming the electrolytic plating layer,
An electroless plating method, wherein a metal film is formed on the entire other surface of the wafer or substrate, and then electroless plating is applied to the terminal surface or pad surface. ウェーハ又は基板の他面側及び側面側の全面に金属皮膜を形成する請求項１記載の無電解めっき方法。   The electroless plating method according to claim 1, wherein a metal film is formed on the entire surface of the other side and side of the wafer or substrate. 金属皮膜として、端子面又はパッド面に形成する無電解めっき層の金属と同種金属から成る金属皮膜を形成する請求項１又は請求項２記載の無電解めっき方法。   3. The electroless plating method according to claim 1, wherein a metal film made of the same metal as the metal of the electroless plating layer formed on the terminal surface or the pad surface is formed as the metal film. 金属皮膜を、めっきによって形成する請求項１〜３のいずれか一項記載の無電解めっき方法。   The electroless plating method according to claim 1, wherein the metal film is formed by plating.
JP2004175283A 2004-06-14 2004-06-14 Electroless plating method Pending JP2005353959A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013140820A1 (en) * 2012-03-23 2013-09-26 株式会社ブリヂストン Rubber composition, mehod for producing rubber-metal composite, rubber-metal composite, tire, industrial belt and rubber crawler

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013140820A1 (en) * 2012-03-23 2013-09-26 株式会社ブリヂストン Rubber composition, mehod for producing rubber-metal composite, rubber-metal composite, tire, industrial belt and rubber crawler
RU2595732C2 (en) * 2012-03-23 2016-08-27 Бриджстоун Корпорейшн Rubber mixture, method of making rubber-metal composite article, rubber-metal composite article, tyre, industrial belt and rubber caterpillar
US9708464B2 (en) 2012-03-23 2017-07-18 Bridgestone Corporation Rubber composition, method for manufacturing rubber-metal composite body, rubber-metal composite body, tire, industrial belt, and rubber crawler

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