JP2005347741A5 - - Google Patents
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- Publication number
- JP2005347741A5 JP2005347741A5 JP2005134751A JP2005134751A JP2005347741A5 JP 2005347741 A5 JP2005347741 A5 JP 2005347741A5 JP 2005134751 A JP2005134751 A JP 2005134751A JP 2005134751 A JP2005134751 A JP 2005134751A JP 2005347741 A5 JP2005347741 A5 JP 2005347741A5
- Authority
- JP
- Japan
- Prior art keywords
- laser
- slit
- irradiation apparatus
- thru
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 10
- 230000003287 optical effect Effects 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 4
- 229910052691 Erbium Inorganic materials 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- 229910052775 Thulium Inorganic materials 0.000 claims 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 238000004587 chromatography analysis Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005134751A JP5250181B2 (ja) | 2004-05-06 | 2005-05-06 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004137374 | 2004-05-06 | ||
| JP2004137374 | 2004-05-06 | ||
| JP2005134751A JP5250181B2 (ja) | 2004-05-06 | 2005-05-06 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005347741A JP2005347741A (ja) | 2005-12-15 |
| JP2005347741A5 true JP2005347741A5 (cg-RX-API-DMAC7.html) | 2008-04-24 |
| JP5250181B2 JP5250181B2 (ja) | 2013-07-31 |
Family
ID=35499781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005134751A Expired - Fee Related JP5250181B2 (ja) | 2004-05-06 | 2005-05-06 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5250181B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7812283B2 (en) | 2004-03-26 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device |
| US8395084B2 (en) | 2005-05-02 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
| JP5137388B2 (ja) * | 2005-12-16 | 2013-02-06 | 株式会社半導体エネルギー研究所 | レーザ照射装置、レーザ照射方法及び半導体装置の作製方法 |
| WO2007069516A1 (en) | 2005-12-16 | 2007-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device |
| US20090046757A1 (en) * | 2007-08-16 | 2009-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device |
| US8598050B2 (en) * | 2008-06-26 | 2013-12-03 | Ihi Corporation | Laser annealing method and apparatus |
| JP2010212530A (ja) * | 2009-03-12 | 2010-09-24 | Fuji Electric Systems Co Ltd | 半導体素子の製造方法 |
| JP5595021B2 (ja) * | 2009-12-03 | 2014-09-24 | 住友重機械工業株式会社 | レーザ処理装置 |
| KR102388723B1 (ko) * | 2015-08-07 | 2022-04-21 | 삼성디스플레이 주식회사 | 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법 |
| KR102463885B1 (ko) * | 2015-10-21 | 2022-11-07 | 삼성디스플레이 주식회사 | 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법 |
| WO2018189900A1 (ja) * | 2017-04-14 | 2018-10-18 | 堺ディスプレイプロダクト株式会社 | 光照射装置 |
| KR102836621B1 (ko) * | 2020-09-01 | 2025-07-21 | 삼성디스플레이 주식회사 | 광학계 및 이를 포함하는 레이저 조사 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4443646B2 (ja) * | 1998-06-04 | 2010-03-31 | 東芝モバイルディスプレイ株式会社 | 多結晶半導体膜の製造方法 |
| JP4397571B2 (ja) * | 2001-09-25 | 2010-01-13 | 株式会社半導体エネルギー研究所 | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
| JP3980465B2 (ja) * | 2001-11-09 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4503246B2 (ja) * | 2002-06-25 | 2010-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4813743B2 (ja) * | 2002-07-24 | 2011-11-09 | 株式会社 日立ディスプレイズ | 画像表示装置の製造方法 |
| JP2004103628A (ja) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | レーザアニール装置及びtft基板のレーザアニール方法 |
| JP4610201B2 (ja) * | 2004-01-30 | 2011-01-12 | 住友重機械工業株式会社 | レーザ照射装置 |
| JP2005217209A (ja) * | 2004-01-30 | 2005-08-11 | Hitachi Ltd | レーザアニール方法およびレーザアニール装置 |
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2005
- 2005-05-06 JP JP2005134751A patent/JP5250181B2/ja not_active Expired - Fee Related