JP2005328080A - Nitride semiconductor luminous element, luminous element, element laminated body, and luminous device using those - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor luminous element capable of obtaining even luminescence over the entire luminous surface. <P>SOLUTION: The device is provided with a laminated body configured by laminating an n-type layer, an active layer and a p-type layer on a substrate, wherein the laminated body has parallel n-type electrode formation regions where in parallel with each other the n-type layer surfaces are exposed to form the n-type electrodes like lines, the n line electrode is each formed in the n-type electrode formation region, a translucent electrode is formed in the substantially entire n-type layer, the n line electrodes are separated from each other and disposed at an equal distance and a n pad electrode is formed at one end of each n line electrode, and linear current diffusion conductors that are alternately disposed with the line n electrodes and formed so as to be at equal distances from the adjacent n line electrodes on the translucent electrode and the p pad electrode is formed at one end of each of the current diffusion conductors. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a nitride semiconductor light emitting element having a relatively large area, a light emitting element, an element stack, and a light emitting device using them.

  In recent years, nitride semiconductor light emitting devices capable of emitting light of a short wavelength have been widely used. In this nitride semiconductor light emitting device, n-type and p-type nitride semiconductor layers are stacked on a sapphire substrate, which is an insulating substrate, and a part of the p-type nitride semiconductor layer is removed to form an n-type nitride semiconductor. An n-electrode is formed on the exposed layer, and a p-electrode is formed on almost the entire surface of the remaining p-type nitride semiconductor layer. As described above, in the nitride semiconductor light emitting device in which the n and p electrodes are formed on the same surface side of the substrate, in order to emit light from the semiconductor side, almost the entire surface of the p-type nitride semiconductor layer. A transparent p-ohmic electrode is formed on the electrode, and a pad electrode and an extended electrode extended from the pad electrode are formed on the transparent p-ohmic electrode. A current is diffused throughout the p-ohmic electrode having a relatively high resistance by the extended electrode. Yes.

JP 2000-163940 A JP 2001-345480 A

  However, the conventional electrode structure has a problem that it is difficult to ensure uniform light emission over the entire light emitting surface when a nitride semiconductor light emitting device having a large area is configured.

  Accordingly, an object of the present invention is to provide a nitride semiconductor light emitting device capable of obtaining uniform light emission over the entire light emitting surface.

  In order to achieve the above object, a nitride semiconductor light emitting device according to the present invention includes a laminate in which an n-type layer, an active layer, and a p-type layer are laminated on a substrate, and the laminate is on the n side. In order to form the electrodes in the shape of a line, the n-type layer surface is exposed and the n-type electrode regions are parallel to each other, and n-line electrodes are formed in the n-electrode formation regions, respectively. In the nitride semiconductor light emitting device having a light transmitting electrode formed on the entire surface, the n line electrodes are separated from each other and arranged at equal intervals, and an n pad electrode is formed at one end of each n line electrode. A line-shaped current spreading conductor is formed on the translucent electrode so as to be equidistant from the adjacent n-line electrodes, which are alternately arranged with the n-line electrodes, and a p-pad is formed at one end of the current spreading conductor, respectively. The electrode is formed The features.

In the nitride semiconductor light emitting device according to the present invention configured as described above, the n-line electrode and the current diffusion conductor are formed at equal intervals, and are individually provided at one end of the n-line electrode and the current diffusion conductor, respectively. Since the pad electrode is formed, current can be injected almost uniformly into the entire light emitting region, and uniform light emission can be obtained over the entire light emitting surface.
Here, in the present invention, the translucent electrode is not limited to an electrode through which a metal is thinly formed as will be described later in the embodiment and transmits light itself. For example, the translucent electrode is formed in a mesh shape. The translucent electrode of the form which enabled it to radiate | emit light from the opening part may be sufficient.
In addition, regarding the n-line electrode, in the embodiments described later, an example in which the n-ohmic electrode and the n-pad electrode are separately configured is shown. However, in the present invention, the n-ohmic electrode and the n-pad electrode are integrally configured. May be.

In the nitride semiconductor light emitting device according to the present invention, one of the n electrode formation regions is formed along a first side which is one side of a rectangular light emitting device, and the other n electrode formation region is the above. It can be constituted by a slit formed by removing the p-type layer and the active layer in a line shape.
In this way, the entire active layer can function as a light emitting region, and efficient light emission becomes possible.

In the nitride semiconductor light emitting device according to the present invention in which one of the n electrode formation regions is formed along the first side, the n line electrode and the current diffusion conductor are configured in the same number. Preferably, one of the current spreading conductors is formed along a second side facing the first side.
In this way, the entire active layer can function as a light emitting region, and efficient light emission becomes possible.

  In the nitride semiconductor light emitting device according to the present invention, the n pad electrode is provided along a third side orthogonal to the first side, and the p pad electrode is opposed to the third side. It is preferable to be provided along the fourth side, and thereby, the entire active layer can be made to emit light more effectively.

Furthermore, in the nitride semiconductor light emitting device according to the present invention, the distance between the other end of the n-line electrode and the p-pad electrode, and the distance between the other end of the current diffusion conductor and the n-pad electrode. Are preferably set to be substantially equal to the distance between the n-line electrode and the current diffusion conductor.
In this way, the luminance substantially equal to that of other portions can be obtained between the other end of the n-line electrode and the p-pad electrode and between the other end of the current diffusion conductor and the n-pad electrode.

  Furthermore, the light-emitting element 100 according to the present invention includes an element laminated structure 101 in which the first conductive type layer 11 and the second conductive type layer 13 are provided with the light emitting layer 12 interposed therebetween. An electrode in which a first electrode 1 and a second electrode 2 are provided on the first conductivity type layer and the second conductivity type layer, respectively, and the first conductivity type layer 11 is exposed and the electrode 1 is provided in the electrode formation surface. A formation region 23, a region where a first conductivity type layer and a second conductivity type layer are provided across the light emitting layer, and the light emitting structure 21 in which the second conductivity type layer 26 is exposed and an electrode is formed; The first conductivity type layer is provided with a plurality of first electrodes, the first electrodes being separated from each other within the pad portion forming region 32, and the pad portions 1b of the first electrodes and the respective pads. A light emitting region 31 that is separated from the pad portion forming region 32 and includes the light emitting structure portion 21 from the portion 1b. And having an extended electrode portion 1b which is formed to extend to.

  Thus, in the electrode formation surface, the first electrode formation part 22 and the light emitting structure part 21 that emits light by providing the second electrode 2 are provided, and the first electrode 1 is provided in the pad part formation region 32. As a region where only the pad portions 1b separated from each other are formed and the stretched electrodes 1a are respectively formed from the regions, a stretched electrode portion 1a formed by stretching into the light emitting region 31 having the light emitting structure portion 21 is provided. By adopting such a structure, the extended electrodes between the pad portions 1b that inhibit uniform light emission are eliminated, the area of the light emitting structure portion 21 can be increased, and the light emitting structure portion between the first electrodes 1, particularly between the extended electrode portions 1a. The light emission of 21 is uniform.

  In the light emitting device 100 according to the present invention, when the light emitting structure portion 23 (31) is provided between the pad portions 1b in the pad portion forming region (32), The light-emitting region and the light-emitting structure portion can be used as the light-emitting region, the light-emitting structure portion 23 (37) is increased, and uniform light emission is also realized in that region.

  Further, in the light emitting device 100 according to the present invention, the light emitting structure portion 36 (21) between the extended electrode portions 1a or the light emitting structure portion 36 that is separated and attached to the extended electrode portion 1a includes the light emission of the extended electrode portion 1a. By being formed continuously with the light emitting structure portions 37 and 38 in the vicinity of the inner end portion of the region, the light emitting regions 36 on both sides separated by the extended electrode portion 1a (22) and the vicinity of the end portions thereof. Uniform light emission is realized as the light emitting structure portion 21 around the extended electrode 1a including the region 38 of the light emitting structure portion that connects the regions 36 separated by. Therefore, the light emitting structure 21 is not separated by the forming portion 22 of the stretched electrode 1a, but is separated in a partial region (stretched electrode forming region 33) and connected in another region 38, that is, both regions (connected) It is preferable that the light emitting structure 21 includes the light emitting region 38 and the electrode forming region 33). More preferably, the light emitting region 31 is connected to the light emitting regions 37 and 38 between the pad portions 1b and 3b so that all the light emitting regions 36 provided alongside the extended electrode portion 1a are connected to the one light emitting structure portion 21. It is preferable to be provided. In the present invention, it is preferable that the first electrode pad portion formation region 32 and the third electrode pad portion 34 are separated at least in the plane, and the first electrode extended electrode portion 1a is mutually separated from the pad portion formation region 32. It is preferable to be provided in the same formation region 33, and it is preferable that the extended electrode formation regions 33 and 35 of the first and third electrodes overlap.

  In addition, when the first electrodes are separated from each other and the extended electrode portion 1a is in a line shape and the bad portion 1b is provided at one end thereof, the pad portion forming region 32 and the extended electrode are formed. The region 33 or the light emitting region 31 is preferably arranged in the electrode forming surface of the element stack structure 101 and in the chip surface, so that the light emitting region 31 (21) can be enlarged. It is preferable that the light emitting region 31 can be enlarged by disposing the portion 32 at the end of the chip (101) and providing the extended electrode forming region 33 and the light emitting region 31 other than the forming region 32 at the end. At that time, as will be described later, it is preferable to form the stretched electrode 1 a and the light emitting region 36 provided therewith substantially perpendicular to the pad portion forming region 32.

  Further, the second electrode 2 provided in the light emitting structure portion 21 in the light emitting region 31 includes the third electrode 3 provided on the second electrode, and between the extended electrode portions 1 a of the first electrode 1. The third electrode 3 is provided on each other, and a plurality of third electrodes 3 are formed separately from each other, so that, similarly to the first electrode 1, between the pad portions 3b of the third electrode 3 or The extending portion for spreading the light emitting structure portion 21 is eliminated, thereby reducing the area of the third electrode 3 covering the light emitting structure portion 21 and extending the extending portion 1a of the first electrode 1 to further widen the light emission uniformity and high output light emission. A range of light emitting structures 21 is obtained.

Further, another light emitting element related to the present invention has an element structure 101 provided with the first conductive type layer 11 and the second conductive type layer 13 with the light emitting layer 12 interposed therebetween, and the same surface side is used as an electrode forming surface. The first conductivity type layer 11 and the second conductivity type layer 13 are provided with the first electrode 1 and the second electrode 2, respectively, and the first conductivity type layer 11 is exposed and the electrode 1 is provided within the electrode formation surface. A light emitting structure having an electrode formed on the electrode forming region 22 and a region where a first conductive type layer and a second conductive type layer are provided with the light emitting layer interposed therebetween, and the electrode is formed by exposing the second conductive type layer And having
The first conductivity type layer is provided with a plurality of first electrodes, and the first electrode includes a pad portion of the first electrode separated from each other in a linear pad portion forming region, and the pad portion from each pad portion. An elongated electrode portion formed by linearly extending to a light emitting region including the light emitting structure portion separated from the portion forming region, and the linearly elongated electrode portions are substantially parallel to each other. To do.

In another light-emitting element related to the present invention, a third electrode provided between the extended electrode portions of the first electrode and extending substantially parallel to the extended electrode portion, and provided on the second electrode. It may be characterized by having.
Furthermore, in another light-emitting element related to the present invention, the third electrode extends to the pad portion formation region of the first electrode with the pad portion and the pad portion as an end, and the first electrode extends. A third electrode extending electrode portion substantially parallel to the electrode portion may be provided.

  The element laminated body according to the present invention includes an element laminated body 103 in which the light emitting element 100 is mounted on a laminated substrate 104, wherein the electrode formation surface side of the light emitting element is a bonding surface side with the laminated substrate. The first and second electrodes 1 and 2 are respectively connected to and electrically connected to the laminated substrate side electrode 112, and the plurality of first electrode pad portions 1a separated from each other are connected to each other. It is characterized in that it is joined and electrically connected to one electrode 114 on the laminated substrate 104 side, whereby the first electrode 1 separated and formed on the light emitting element 100 side is mounted by the laminated substrate 104 mounting. By providing an electrode structure that is electrically connected to each other and that supplements the electrode structure suitable for light emission on the light emitting element side on the laminated substrate 104 side, a suitable element laminate 103 can be obtained.

  In the element stack 103, the second electrode 2 of the light emitting element or the third electrode 3 on the second electrode 2 is separated from each other, and the plurality of electrodes 2 of the separated second conductivity type layer 13 are separated. 3 are bonded to one electrode 114 on the laminated substrate 104 side and electrically connected to each other. Similarly to the first electrode 1, the base electrode 104 side electrode 114 can be arranged so as to connect the electrodes 2 and 3 separated from each other by making an optimal electrode structure on the light emitting element 100 side and supplementing it. Can be fully utilized. In addition, as shown in FIGS. 11B, 17A, and 17E, when the third electrode 3 is a plurality of electrodes arranged separately, the electrode 114 on the substrate 104 side is electrically connected. Thus, the same function as that of the stretched electrode 3a can be provided.

  The light-emitting element according to the present invention is a light-emitting device 200 using the light-emitting element 100, and the light-emitting device 200 includes a light conversion member 106 that converts part of light from the light-emitting element into light having a different wavelength. It is characterized by having. Thereby, it can be set as the light-emitting device which converted the light of the light emitting element 100, and it can be set as light emitting devices, such as a white type and a light bulb color, by the mixed color light of the light emission of a light emitting element, and converted light.

  In the light emitting device according to the present invention, the light conversion member 106 includes Al and at least one element selected from Y, Lu, Sc, La, Gd, Tb, Eu, and Sm, and Ga and In. An aluminum garnet phosphor containing one element selected from the group consisting of an aluminum garnet phosphor containing at least one element selected from rare earth elements. As a result, even when the light emitting element 100 is used with high output and high heat generation, a light emitting device having excellent temperature characteristics and excellent durability can be obtained.

In the light-emitting element according to the present invention, the light conversion member 106 includes (Re _1-x R _x ) ₃ (Al _1-y Ga _y ) ₅ O ₁₂ (0 <x <1, 0 ≦ y ≦ 1, However, Re is at least one element selected from the group consisting of Y, Gd, La, Lu, Tb, and Sm, and R is Ce or Ce and Pr). As described above, the light emitting device 200 can be a high output light emitting element having excellent temperature characteristics and durability. In particular, when the light emitting layer is InGaN, This is a change along the radiation, which is advantageous for white light emission.

  Further, in the light emitting device according to the present invention, the light conversion member 106 includes N, and at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn, and C, Si, Ge, The light emitting device 200 includes a nitride-based phosphor that includes at least one element selected from Sn, Ti, Zr, and Hf and is activated by at least one element selected from rare earth elements. Like a phosphor, a high-output light-emitting element can be a light-emitting element having excellent temperature characteristics and durability. In particular, a silicon oxynitride compound can be a particularly excellent phosphor. Further, by combining with the above-mentioned aluminum / garnet phosphor, the temperature characteristics of the two interact with each other, so that a light emitting device with a small temperature change of the mixed color can be obtained.

In the light-emitting element according to the present invention, the nitride-based phosphor has a general formula of L _X Si _Y N _{(2 / 3X + 4 / 3Y)} : Eu or L _X Si _Y O _Z N _{(2 / 3X + 4 / 3Y-2). / 3Z)} : Eu (L is any one of Sr or Ca, or Sr and Ca). A light-emitting device is particularly preferable in the above effect.

As described above in detail, in the nitride semiconductor light emitting device according to the present invention, the n-line electrode and the current diffusion conductor are formed at equal intervals, and at one end of the n-line electrode and the current diffusion conductor. Since the pad electrodes are individually formed, current can be injected almost uniformly over the entire light emitting region, and uniform light emission can be obtained over the entire light emitting surface.
Therefore, according to the present invention, it is possible to provide a nitride semiconductor light emitting device capable of obtaining uniform light emission over the entire light emitting surface.

Hereinafter, a nitride semiconductor light emitting device according to an embodiment of the present invention will be described with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 is a plan view of the nitride semiconductor light-emitting device according to the first embodiment of the present invention, and shows a unique electrode structure of the present invention. 2 is a cross-sectional view taken along the line XX ′ of FIG.
The nitride semiconductor light emitting device according to the first embodiment of the present invention includes an n-type layer 11, an active layer 12, and a p-type layer 13 each made of a nitride semiconductor, which are stacked in that order on a sapphire substrate 10. The electrode is composed of a plurality of n-line electrodes 1 separated from each other, and the p-side electrode is composed of a translucent p-ohmic electrode 2 and a plurality of current diffusion conductors 3 formed on the p-ohmic electrode 2. ing.

More specifically, in the nitride semiconductor light emitting device of the first embodiment, in the stacked body composed of the n-type layer 11, the active layer 12, and the p-type layer 13, part of the p-type layer 13 and the active layer 12 is a line. The plurality of slits Sn are formed by removing the n-type layer, the n-type layer is exposed in a line shape, and the n-line electrode 1 is formed on each n-type layer exposed by the slit Sn. An n-type layer is exposed to a predetermined width along one side parallel to the slit (one side of the light emitting element: hereinafter referred to as the first side), and one n-line electrode 1 is also formed there. It is formed.
Hereinafter, the n-type layer surface on which the n-line electrode with the n-type layer exposed to a predetermined width is formed along the first side is referred to as a first region, and the n-line electrode formed in the first region. Is referred to as a first n-line electrode. In this specification, a side opposite to the first side is referred to as a second side.

Here, in the first embodiment, the first region and the plurality of slits Sn are formed so as to be parallel to each other, and the interval between the first region and the slit Sn and the interval between the adjacent slits Sn are equal to each other.
In the first embodiment, each n-line electrode 1 includes a line-shaped ohmic electrode 1a and an n-pad electrode 1b provided at one end of the line-shaped ohmic electrode 1a. In the first embodiment, the n pad electrode 1b provided at one end of each line ohmic electrode is formed along one side (third side) perpendicular to the first side.
In the first embodiment, the line ohmic electrode 1a is widely formed at one end thereof to form the n-pad electrode 1b, and the n-pad electrode 1b is formed thereon.

  In the first embodiment, the p-side electrode includes a light-transmitting p-ohmic electrode 2 formed on almost the entire surface of the p-type layer, and a plurality of current diffusion conductors 3 formed on the p-ohmic electrode 2. It is comprised by. The current diffusion conductor 3 includes a plurality of diffusion line electrodes 3a formed in parallel with the line-shaped ohmic electrode 1a and a p-pad electrode 3b provided at one end of the diffusion line electrode 3a. In the first embodiment, the distance between the diffusion line electrode 3a and the adjacent n-line electrode 1 is formed to be equal to each other, and one of the plurality of diffusion line electrodes 3a is formed along the second side. The other diffusion line electrode 3 a is formed between the n line electrodes 1. That is, in the first embodiment, when the n-line electrode is formed along one side (first side) of the two opposing sides, the current flows along the other side facing the one side. The diffusion conductor 3 is formed. Further, each of the p pad electrodes 3b provided at one end of each diffusion line electrode 3a is formed along the fourth side opposite to the third side on which the n pad electrode is formed.

  The nitride semiconductor light emitting device of the first embodiment having the above-described electrode configuration improves the light emission efficiency by injecting current into the entire light emitting region for the following reason, and has a relatively large area (for example, , 1000 μm × 1000 μm) nitride semiconductor light-emitting elements can also emit light uniformly over the entire light-emitting surface.

First, in the first embodiment, an n pad electrode 1b is formed at one end of each n line electrode 1, and a p pad electrode 3b is formed at one end of each diffusion line electrode 3a. As a result, the current can be injected almost uniformly into the entire light emitting region.
That is, as shown in a comparative example to be described later, if there is a clear difference between the n pad electrode formed at one end and the other end of the line ohmic electrode between different n line electrodes, the light emitting region is injected. Nonuniformity occurs in the current. Similarly, for the p-side electrode, if there is a clear difference between the p-pad electrode formed at one end and the other end of the diffusion line electrode between different diffusion electrodes, the current injected into the light emitting region Is uneven.

However, in the first embodiment, the distance from the n pad electrode 1b to the other end of the line-shaped ohmic electrode 1a can be made substantially equal between the different n line electrodes 1, and the p pad electrode between the different diffusion electrodes 3 The distance between 3b and the other end of the diffusion line electrode 3a can be made substantially equal, and current can be uniformly injected into the entire light emitting region.
Here, the above-mentioned distances are substantially equal does not mean that the distances are completely the same, but those that do not cause current non-uniformity due to the difference in distances are substantially the same range. Shall be included.

  Secondly, in the first embodiment, the distance between the adjacent n-line electrode 1 and the p-side diffusion electrode 3 is made equal so that current is uniformly injected into the entire light emitting region.

Due to the two main features described above, the first embodiment enables uniform light emission over the entire light emitting surface. However, the electrode configuration shown in FIGS. Such a contrivance is made and it is configured to emit light more uniformly.
That is, in the first embodiment, the line-shaped ohmic electrode 1a and the diffusion line electrode 3a are formed linearly so that corners and curved portions are not formed in the middle, and electric field concentration in the corners and curved portions. And the non-uniformity of the electric field and the accompanying non-uniformity of the current.

In the first embodiment, the other end of the diffusion line electrode 3a (the end located opposite to the one end where the p pad electrode is formed) and the n pad electrode 1b (the n line where the n pad electrode 1b is formed) The distance between the diffusion line electrode 3a and the n-line electrode 1 is set to be approximately equal to the distance between the electrode 1 and one end of the electrode 1).
Furthermore, the other end of the n-line electrode 1 (the end located on the opposite side of the one end on which the n-pad electrode is formed), the p-pad electrode 3b (one end of the diffusion line electrode 3a on which the p-pad electrode 3b is formed), Is set substantially equal to the distance between the diffusion line electrode 3a and the n-line electrode 1.
As a result, the distance between the current spreading conductor 3 and the n-line electrode can be made substantially equal in any part, so that current can be injected almost uniformly into the entire light emitting region, and uniform light emission can be achieved.

Hereinafter, the effects obtained by the electrode structure according to the present invention will be described in comparison with the comparative example shown in FIG.
In the nitride semiconductor light emitting device of the comparative example shown in FIG. 3, as in the first embodiment, a part of the p-type layer and the active layer is formed in a line shape in the stacked body including the n-type layer, the active layer, and the p-type layer. A plurality of (four) slits are formed by the removal, and line-shaped ohmic electrodes are respectively formed on the n-type layer exposed by the slits. The first embodiment is different from the first embodiment in the following points. Different.

That is, in the nitride semiconductor light emitting device of the comparative example, the n-side ohmic electrode includes four line-shaped ohmic electrodes 5a1, 5a2, 5a3, 5a4 formed in the slits provided in the multilayer body and the line-shaped ohmic electrodes. And a connection ohmic electrode 5c formed along one side (third side).
In the nitride semiconductor light emitting device of the comparative example, the n pad electrode 5b is not provided for each line-shaped ohmic electrode, but the line-shaped ohmic electrodes 5a1 and 5a4 (outermost of the four line-shaped ohmic electrodes). The two line ohmic electrodes 5a2 and 5a3 (two electrodes positioned on the inner side of the four line ohmic electrodes) receive current via the connection ohmic electrode 5c. Supplied. As described above, in the comparative example, the n-line electrode 5 is configured by the line-shaped ohmic electrodes 5a1 to 5a4, the connection ohmic electrode 5c, and the n-pad electrode 5b.

Also in this comparative example, the p-side electrode includes a translucent p-ohmic electrode 2 formed on almost the entire surface of the p-type layer, and a plurality of current diffusion conductors 6 formed on the p-ohmic electrode 2. However, the configuration of the current spreading conductor 6 is different from that of the first embodiment.
That is, in the current diffusion conductor 6 of the comparative example, a plurality of diffusion line electrodes 6a1 to 6a5 are connected by the connection electrode 6c formed along the fourth side, and the p pad electrode 6b is formed at the base of the diffusion line electrodes 6a2 and 6a4. Is provided.

As described above, the nitride semiconductor light emitting device of the comparative example is different from the nitride semiconductor light emitting device of the first embodiment in the following points.
First Difference A plurality of line-shaped ohmic electrodes 5a1 to 5a4 are connected to each other by connecting ohmic electrodes 5c, and n-pad electrodes are not individually provided in correspondence with the respective line-shaped ohmic electrodes.
As a result, a current is supplied to the line-shaped ohmic electrodes 5a2 and 5a3 through the connection ohmic electrode 5c.
Second Difference A plurality of diffusion line electrodes 6a1 to 6a5 are connected to each other by connection electrodes 6c, and p-pad electrodes 6b are not individually provided corresponding to the respective diffusion line electrodes.
Thereby, a current is supplied to the plurality of diffusion line electrodes 6a1, 6a3, 6a5 via the connection electrode 6c.

<Comparison of luminous intensity between Embodiment 1 and Comparative Example>
4 shows the emission intensity on the XX ′ line of the nitride semiconductor light emitting device of the first embodiment, and FIG. 5 shows the emission intensity on the XX ′ line of the nitride semiconductor light emitting device of the comparative example.
As shown in FIG. 4, in the nitride semiconductor light emitting device of the first embodiment, the relative strength between the line-shaped ohmic electrode 1a and the diffusion line electrode 3 is approximately 0.9, depending on the position. There is little change.

On the other hand, as shown in FIG. 5, the nitride semiconductor light emitting device of the comparative example has a low relative intensity in the light emitting region located between the diffusion line electrode 6a3 and the line ohmic electrodes 5a2 and 5a3.
Further, in the nitride semiconductor light emitting device of the comparative example, the light emitting region positioned between the diffusion line electrode 6a1 and the line-shaped ohmic electrode 5a1 and the light emitting region positioned between the diffusion line electrode 6a5 and the line-shaped ohmic electrode 5a4 are also relative. The strength is low.
As described above, the nitride semiconductor light emitting device of the first embodiment emits light uniformly over the entire light emitting region, whereas the nitride semiconductor light emitting device of the comparative example emits light unevenly. I understand that.

FIG. 6 is a graph showing the light emission intensity distribution in the entire light emitting surface, which is shown as an area occupancy with respect to the relative intensity. As is apparent from FIG. 6, the nitride semiconductor light emitting device of the first embodiment has an area occupancy peak at a specific relative intensity (about 0.85), and the height of the peak is about 10%. is there.
On the other hand, the nitride semiconductor light emitting device of the comparative example does not have a significant peak as in the first embodiment, and is about 6% at the highest occupation ratio.
Further, in the nitride semiconductor light emitting device of the first embodiment, the occupation ratio in the portion where the specific relative intensity is 0.6 or less is lower than that in the comparative example.
As described above, the light emission intensity distribution shown in FIG. 6 shows that the nitride semiconductor light emitting device of the first embodiment has higher uniformity of light emission intensity in the light emitting surface than the light emitting device of the comparative example. .

Hereinafter, in the first embodiment, specific configuration examples of the n-type layer 11, the active layer 12, and the p-type layer 13 will be described.
In addition, the structure of the layer shown below shows the structure of the layer of Embodiment 1 and the comparative example used for the measurement of FIGS.
In this example, first, undoped AlGaN is grown as a buffer layer on the substrate 10 to a thickness of 100 mm.
Then, on the buffer layer made of undoped AlGaN, the undoped GaN layer (15000Å), Si-doped GaN (41000Å), undoped GaN layer (3000Å), Si-doped GaN (300Å), undoped GaN constituting the n-type layer 11 A layer consisting of 10 pairs of layers (500 Å) and undoped GaN (40 Å) / InGaN (20 Å) is grown in order.
Next, a layer composed of an undoped GaN layer (250Å) and an undoped InGaN (30Å) / GaN (265Å) 6 pair constituting the active layer 12 is grown on the n-type layer 11.
Subsequently, on the active layer 12, a layer composed of 5 pairs of Mg-doped (doping amount: 5 × 10 ¹⁹ cm ⁻³ ) AlGaN (40 Å) / InGaN (25 Å) constituting the p-type layer 13, an undoped AlGaN layer (2800 cm), Mg-doped (doping amount: 1 × 10 ²⁰ cm ⁻³ ) GaN (1200 cm) is grown.

Embodiment 2. FIG.
FIG. 7 is a plan view of the nitride semiconductor light emitting device of the second embodiment according to the present invention, which is different from the first embodiment except that the number of n-line electrodes 1 and current diffusion conductors 3 is different from that of the first embodiment. It is comprised similarly. FIG. 8 shows the light emission intensity in the direction of the arrow of the nitride semiconductor light emitting device of the second embodiment.

  More specifically, in the nitride semiconductor light emitting device of the second embodiment, in the stacked body composed of the n-type layer 11, the active layer 12, and the p-type layer 13, the slit Sn that exposes the n-type layer in a line is 1 This is formed, and one n-line electrode 1 is formed there. An n-type layer is exposed to a predetermined width along one side parallel to the slit (one side of the light emitting element: hereinafter referred to as a first side) (first region), and there is also one An n-line electrode (first n-line electrode) 1 is formed.

In the second embodiment, the p-side electrode is formed with the two current diffusion conductors 3 formed on the translucent p-ohmic electrode 2 formed on almost the entire surface of the p-type layer. One of the current spreading conductors 3 is formed between the two n-line electrodes 1, and the other one is formed along the second side (side facing the first side).
In the second embodiment, the distance between the electrodes and the arrangement relationship of the n and p pad electrodes are the same as those in the first embodiment.
That is, in the second embodiment, the distance between the current diffusion electrode 3 and the adjacent n-line electrode 1 is formed to be equal to each other.
Further, the distance between the other end of the diffusion line electrode 3a and the n pad electrode 1b is set to be approximately equal to the distance between the diffusion line electrode 3a and the n line electrode 1, and the distance between the other end of the n line electrode 1 and the p pad electrode 3b is set. The distance is set substantially equal to the distance between the diffusion line electrode 3a and the n-line electrode 1.
In the nitride semiconductor light emitting device of the second embodiment configured as described above, the distance between the current diffusion conductor 3 and the n-line electrode can be substantially equal in any part, as in the first embodiment. The current can be injected almost uniformly throughout the light emitting region, and uniform light emission is possible (FIG. 8).
In the nitride semiconductor light emitting devices of the first embodiment and the comparative example used for the measurement of the light emission intensity of FIGS. 4 and 5, the n-type layer 11 is formed to a thickness of 6 μm, but the light emission intensity of FIG. In the nitride semiconductor light emitting device of the second embodiment used for measurement, the n-type layer 11 was formed to a thickness of 15 μm.

Embodiments 3 to 7
Hereinafter, although other embodiment of this invention and each structure of the embodiment are described, this invention can also be applied combining each embodiment and its structure also including the said Embodiment 1,2. Moreover, although it demonstrates using FIGS. 9-18, the code | symbol of each drawing is common and there are some which were drawn exaggerated one part.

(Light Emitting Element Structure 100)
As shown in FIGS. 9 to 18, the light emitting device of the present invention is an element structure 100 having a first conductive type layer 11, a light emitting layer (active layer) 12, and a second conductive material on a substrate 10. In this case, the light emitting structure 21 has the first and second conductivity type layers in the stacking direction in the stacking direction as shown in the figure. In addition to the structure sandwiching the first and second conductive type layers, the first and second conductivity type layers may be joined in the lateral direction, or a combination of these may be used. Further, as the light emitting element structure, a MIS structure, a pn junction structure, a homojunction structure, a heterojunction structure (double heterostructure), a PIN structure, or the like can be used, and it can also be applied to a unipolar element. It is preferable to use a structure in which the active layer is sandwiched between n-type and p-type layers such as a pn junction structure in which the first and second conductivity-type layers are different conductivity-type layers.

The semiconductor material having a laminated structure constituting the element structure 100 may be an InAlGaP-based material, an InP-based material, an AlGaAs-based material, a mixed crystal material thereof, or a GaN-based nitride semiconductor material. Specifically, as a GaN-based nitride semiconductor material, a group III-V nitride semiconductor (In _α Al _β Ga _1-α-β N, 0 ≦ α, GaN, AlN, InN, or a mixed crystal thereof) 0 ≦ β, α + β ≦ 1), and in addition to this, B is used as part or all of the group III element, or part of N is substituted with P, As, or Sb as the group V element. Mixed crystals may be used. Hereinafter, a nitride semiconductor will be used for explanation, but the present invention can be applied to other material systems.
As the light emitting layer, an InGaN-based material can be used, and a light emitting layer having a wide bandgap can emit light that emits light from a green or blue visible light region to a purple or shorter wavelength ultraviolet region.

  In each embodiment, the first and second conductivity type layers 11 and 12 are an n-type layer and a p-type layer, but this may be reversed. Further, as a growth method of the semiconductor laminated structure 101, specifically, MOVPE (metal organic chemical vapor deposition), HVPE (halide vapor deposition), MBE (molecular beam epitaxy), MOCVD (metal organic chemical vapor deposition). ), Preferably MOCVD, MBE.

As the substrate used for the growth method of the semiconductor multilayer structure 101 of the present invention, particularly the substrate 10 for epitaxial growth, for example, one of the C-plane, R-plane, and A-plane is mainly used as a heterogeneous substrate of a material different from the nitride semiconductor. Insulating substrate such as sapphire, spinel (MgA1 ₂ O ₄ ), SiC substrate (including 6H, 4H, 3C), ZnS, ZnO, GaAs, Si, and an oxide substrate lattice-matched with a nitride semiconductor, etc. It is possible to grow a nitride semiconductor, and it has been conventionally known that a substrate material different from that of a nitride semiconductor can be used, preferably sapphire or spinel. A nitride semiconductor substrate or the like can also be used. As other semiconductor materials, conventionally known substrates of the same material system or different types of substrates such as Si can be used.

(Semiconductor laminated structure 101)
For example, as shown in FIGS. 16 and 18, the semiconductor multilayer structure 101 for forming the light emitting element 100 is grown on the substrate 10 via the base layer 14. At this time, the base layer 14 operates as the element structure 101. Although it may be included in the portion, it is provided as a non-operating portion that is usually formed only for growth of the element structure and does not function as an element. In particular, when a different substrate is used as the underlayer, a low-temperature growth buffer layer is used as a crystal nucleation and nucleation layer, and preferable conditions are Al _x Ga _1-x N (0 ≦ x ≦ 1) at a low temperature (200 ˜900 ° C.), followed by layer growth at a high temperature to form a film with a thickness of about 50 to 0.1 μm (single crystal, high temperature growth layer). In addition, as known as ELO (Epitaxial Lateral Overgrowth), growing parts such as islands (convex parts, mask openings) are preferentially selected or selected on the substrate or underlying layer compared to other regions. It is also possible to use a growth layer that forms a layer by growing each of the selective growth portions in the lateral direction to form a layer by joining and associating with each other. And, in particular, an element structure with reduced crystal defects.

  As a dopant used for the nitride semiconductor, as an n-type impurity, a group IV or group VI element such as Si, Ge, Sn, S, O, Ti, or Zr can be used, and preferably Si, Ge, or Sn is used. Most preferably, Si is used. The p-type impurity is not particularly limited, and examples thereof include Be, Zn, Mn, Cr, Mg, and Ca, and Mg is preferably used. By adding these acceptor and donor dopants, nitride semiconductor layers of each conductivity type are formed, and each conductivity type layer described later is formed. A nitride semiconductor can be used as an n-type layer even if it is an additive-free layer not doped with impurities, and a dopant suitable for other material systems such as AlGaAs is used. In the first conductivity type layer and the second conductivity type layer in the present invention, a partially undoped layer or a semi-insulating layer may be laminated, and the reverse conductivity type buried layer such as a current blocking layer may be laminated. A partially parasitic element portion may be formed in each conductivity type layer.

(First conductivity type layer 11)
As shown in the element structure of the above embodiment, the first conductivity type layer 11 includes a layer structure that contains dopants of each conductivity type and realizes supply and diffusion of carriers in the electrode formation surface and the active layer. In particular, the layer (contact layer) that diffuses and supplies carriers in the plane from the electrode forming portion 22 to the light-emitting structure portion 21 is preferably doped at a higher concentration than other regions. In addition to such a charge supply / in-plane diffusion layer (contact layer and its neighboring layers), as shown in the above embodiment, an intermediate layer that moves and supplies charges to the light emitting layer in the stacking direction, or a second layer It is preferable to provide a clad layer or the like for confining conductive carriers in the light emitting layer separately from the contact layer. As a layer provided between the light emitting layer 12 and the contact layer of the in-plane diffusion layer (region), in the case of a nitride semiconductor element, the dopant concentration is lower than that of the in-plane diffusion layer (region) or the undoped layer is low. It is preferable to provide an impurity concentration layer (undoped layer) and / or a multilayer film layer. This is because the low impurity layer recovers the deterioration of crystallinity due to the high impurity layer (in-plane diffusion layer) and improves the crystallinity of the clad layer and the light emitting layer grown on it. By providing the low concentration layer adjacent to the layer, in-plane diffusion can be promoted and pressure resistance can be improved. The multilayer film layer is formed with a periodic structure in which at least two kinds of layers are alternately stacked, specifically, a periodic structure of a nitride semiconductor layer containing In and a layer having a different composition, preferably By being composed of In _x Ga _1-x N / In _y Ga _1-y N (0 ≦ x <y <1), a light emitting layer, particularly a nitride semiconductor layer containing In, preferably a plurality of well layers as well layers When used, the crystallinity can be improved. As such a multilayer film, in addition to a periodic structure composed of layers having different compositions, a composition gradient structure, a structure in which the impurity concentration is modulated in these structures, a structure in which the film thickness is changed, and the like can be adopted. It is advantageous for the crystallinity to form a structure in which layers with a thickness of 20 nm or less are stacked, and more preferably with a structure in which layers with a thickness of 10 nm or less are stacked.

(Light emitting layer (active layer) 12)
The element structure 101 of the present invention is preferably an element structure in which a light emitting layer is provided between the first and second conductivity type layers so that light is emitted from the light emitting layer. In particular, in a nitride semiconductor, nitride containing In is included. It is preferable that a light emitting layer is used for the light emitting layer because a suitable light emitting efficiency can be obtained in the ultraviolet to visible light (red light) region, and it is particularly desirable to use an InGaN layer, particularly by changing the mixed crystal ratio of In. It is preferable to obtain the emission wavelength. As another nitride semiconductor material, a material having a higher band gap than InGaN such as GaN and AlGaN may be used as a light emitting element used in the ultraviolet region.

  As a more preferable light emitting layer, an active layer having a quantum well structure is used. The multi-quantum has a structure in which the well layer is a single quantum well structure, and more preferably, a plurality of well layers are stacked via a barrier layer. It is preferable to employ a well structure. As for the well layer, an InGaN layer is preferably used similarly to the above light-emitting layer, and for example, InGaN, GaN, or AlGaN is preferably provided as a barrier layer that has a band gap energy larger than that of the well layer. . At this time, the thickness of the well layer and the barrier layer is 30 nm or less, preferably 20 nm or less, and more preferably 10 nm or less in the well layer, whereby a light emitting layer having excellent quantum efficiency can be obtained. Moreover, the dopant of each conductivity type layer may be doped to the well layer and the barrier layer, and one or more barrier layers may be provided between the well layers.

(Second conductivity type layer 13)
As the second conductivity type layer 13, it is preferable to provide a clad layer for confining carriers in the light emitting layer and a contact layer on which the electrode is formed. It is preferable that the dopant is provided further away and the dopant is doped at a high concentration. In the nitride semiconductor, it is preferable to use a nitride semiconductor containing Al as the cladding layer, more preferably an AlGaN layer, and the efficiency of the light emitting layer by being formed close to, preferably in contact with, the light emitting layer. Can be improved. Furthermore, by interposing a layer with a lower impurity concentration between the contact layer and the clad layer, it is possible to obtain an element with superior pressure resistance, and crystallinity is improved even if the contact layer is highly doped This is preferable because it is possible. As shown in FIGS. 10, 12, 16, and 18, the contact layer is provided as a light emitting portion within the electrode formation surface, and therefore can function as a layer for diffusing carriers within the surface. 2 and function as in-plane current diffusion by the electrode 3 and the electrode 3 to assist the diffusion of p-type carriers with low mobility in the nitride semiconductor, and to change the thickness of the contact layer This layer is smaller than the other layers (cladding layer, intervening low concentration layer) and doped with impurities at a higher concentration than other layers, thereby forming a high carrier concentration layer and realizing good charge injection from the electrode. This is preferable.

(Light emitting element in-plane structure)
In the present invention, as the structure within the electrode formation surface of the light emitting element structure 101, as shown in FIGS. 10, 12, and 16, the light emitting layer 12 and the first and second conductivity type layers 11 and 13 sandwiching it are formed. The light emitting structure and the first conductivity type layer side electrode forming part 22 are preferably provided separately from the structure partially overlapping in the plane. At this time, the electrode forming part 22 is provided with the slits shown in FIGS. Functions as Sn.

  The electrode forming portion 22 is provided on the exposed portion 23 of the first conductivity type layer 11 so that an electrode can be formed. The exposed portion is a first conductive layer as shown in FIGS. In the laminated structure 101 in which the mold layer 11, the light emitting layer 12, and the second conductivity type layer 13 are laminated in order, the first conductivity type layer 11 in part of the surface of the second conductivity type layer 13 and the light emitting layer 12, or in addition thereto. In addition to removing the exposed portion 23 in the depth direction to make the exposed exposed portion 23 an electrode forming portion 22, as shown in FIG. 16 (b), a separation groove 23a is formed, and the groove 23a is interposed therebetween. The electrode 1 may be formed so as to be spaced apart from the light emitting structure 21 and extend from the exposed portion 23 to the second conductive type layer exposed portion 26, and the electrode forming portion 22 may be provided in the plane. As shown in FIG. 16A, a part of the surface of the formed first conductivity type layer 11a is removed or masked. Then, as the light emitting structure portion 21 in a part of the surface, a structure in which the light emitting layer 12, the second conductive type layer 13, or the part 11c of the first conductive type layer 11c is grown in addition to the light emitting layer 12, a part of the in-plane structure. It can also be set as the structure formed in (light emitting structure part). At this time, the electrode forming portion 22 and the slit Sn which are bonding positions of the electrode 1 can be equal to or higher than the electrode 3 in the stacking direction. At this time, since the electrode forming portion 22 is formed separately from the light emitting structure portion 21 in the plane, the region of the electrode forming portion 22 becomes a non-light emitting region, and the light emitting structure portion 21 and the electrode forming portion 22 In the plane, carriers are diffused and supplied from the electrode 1 to the light emitting structure 21 by a partial region 11b of the first conductivity type layer provided below.

(In-plane electrode structure)
In the present invention, the basic structure of the electrode structure is that, within the electrode formation surface, as the electrode 1 on the exposed portion 23 of the first conductivity type layer 11, an electrode pad portion 1b, and an electrode extending portion 1a extending therefrom, The electrode 1 is provided in the electrode forming region 22 in a partial region of the exposed portion 23, and the light emitting structure 21 is partially separated mainly by the electrode extending portion 1a. The electrode 2 is provided on the exposed portion 26 and is formed in the light emitting structure 21.

  Here, FIG. 19 is a schematic plan view illustrating the conventional technology in comparison with the light emitting device of the present invention. In the conventional technology of FIG. 19A, the first electrode 5 is formed of a first conductivity type layer. The electrode forming portion 22 is provided to extend the pad portion 5b, the light emitting region 31, and the extended electrode portion 5a that separates and extends the light emitting structure portion 21, and to extend the distance between the extended electrode portions 5a in the light emitting region 31 plane. The electrode portions 5c of the second conductive type layer 2 are connected to each other, and the electrode 2 of the second conductivity type layer and the electrode 6 provided thereon are stretched into the pad portion 6b and the light emitting region 31 therefrom. The part 6a and the electrode part 6c which expands the space | interval between each extending electrode part 6a are connected and formed. The electrode portions of the electrodes 5 and 6 are arranged so as to be substantially equidistant, and the extended electrode portions 5a and 6a that are alternately arranged substantially parallel to each other in the light emitting region 31 (light emitting structure portion 21) The electrode portions 5c and 6c extending so as to surround the light emitting region 31 are connected to the pad portions 5b and 6b. As another example of the conventional structure, as shown in FIG. 19 (b), the pad portions 5b and 6b are shown as solid circles and squares as shown in FIG. 19 (a). Between the pad portions 5b and 6b, and the electrode portions 5c and 6c are arranged between the pad portions 5b and 6b. In the light emitting device of the present invention, as shown in FIG. 19C, the electrode between the pad portions 1b of the first electrode 1 is removed as indicated by the dotted line, and the light emitting region 31 (light emitting structure portion 21) is removed from the pad portion 1b. ) Is formed of a stretched electrode portion 1a extending inward. Accordingly, the exposed portion 22 of the first conductivity type layer 11 has the pad portions 1b separated into the pad portion forming region 32 of the first electrode 1, respectively, and the light emission separated from the pad portion into the pad portion forming region 32. Each is provided with a stretched electrode portion 1 a that extends into the region 31. Further, the second conductivity type layer 13 includes an extended electrode portion 3a extending from each pad portion 3b to the light emitting region 31 by removing the electrode 2, the electrode 3 thereon, and the electrode portion between each pad portion 3b. Further, the extended electrode portions 1b and 3b are arranged substantially in parallel to face each other, and preferably arranged at equal intervals.

  FIG. 19D shows a more preferable embodiment. In the light emitting region 31 separated from the pad portion forming region 32 of the first electrode 1, an extended electrode forming region 33 is provided, and the pad portion 1b is separated from the pad portion 1b. It is an area | region where the electrode part 1a is formed by extending | stretching, and at least one part overlaps and forms in the extended electrode formation area 35 of a 3rd electrode. Further, the pad portion forming region 34 of the third electrode is provided so as to sandwich the stretched electrode forming regions 33 and 35 with the first electrode pad portion forming region 32. In this way, each pad part forming region is preferably formed along the side surface of the element structure part so as to sandwich the light emitting region 31, the extended electrode forming regions 33 and 35, and the extended electrode parts 1a and 3a. The light emitting region 31 can be disposed so as to extend over the entire device structure, and the light emitting region 36 between the electrode extension portions can be widened, so that the light emission output can be improved. Further, as shown in the drawing, the light emitting region 36 between the extended electrode portions 1a and 3a is connected to the light emitting region 38 between the pad portions 3b, and the respective regions 36 are continuously formed, so that the extended electrode portion 1a is formed. It is preferable that light can be suitably emitted by current diffusion from the end. Further, in FIG. 19 (e), as shown by the dotted line in FIG. 19 (d), the extended electrode portions 1a and 3a are further extended to increase the light emission area and improve the output. Specifically, the light emitting structure portion 21 is provided up to the first electrode pad portion forming region 32 and is provided between the pad portions 1b, and the extending portion 1a of the first electrode 1 and the electrode forming region 23 are extended. The third electrode pad portion 3b forming region 34 is extended to be provided between the pad portions 3b.

In the above embodiment, the n electrode 1 and the p electrode 2 correspond to the first electrode 1 and the second electrode 2, respectively, and the n-type layer 11 and the p-type layer 13 respectively correspond to the first conductivity type layer 11 and the second conductivity type layer. 12 applies.
(First electrode 1)
In the light emitting device of the present invention, the basic configuration is that each of the extended electrode portions 1a extended into the light emitting region 31 from a plurality of pad portion forming regions 32 formed by separating the pad portions 1b of the first electrode 1 from each other. The structure is provided. The formation region 32 of the pad portion 1b of the first electrode 1 is preferably formed into a linear shape as shown in FIGS. 19 and 9 and the pad portion 1b arranged linearly. 32 may be partially bent or curved, bent in a multistage manner such as a continuous straight line, or extended in the element structure 101 plane. In addition, a plurality of pad portion formation regions 32 may be provided, but preferably one for each light emitting region 31, and more preferably, the light emitting region 31 (light emitting structure portion 21) and the formation region 32 are respectively provided. By setting the number to one, the light emitting region 31 and the pad portion forming region 32 can be easily arranged in the plane, and the uniform light emission is preferably realized in the light emitting region 32 by the extended electrode portion 1a.

  Further, the first electrode 1 is formed as an electrode formation region 22 in at least a part of the exposed portion 23 of the first conductivity type layer 11 and is provided separately from the light emitting structure portion 21. Current is injected into the layer 11. As shown in FIGS. 9 and 10, the exposed portion 23 of the first conductivity type layer 11 may be provided at the end portion of the element structure portion 101 so as to surround the light emitting region 31 (structure portion 21). Can be exposed at the end of the element, and as shown in FIGS. 10B and 10C, the side surface 24 of the first conductivity type layer 11 can be inclined to function as a light reflecting portion. Increasing the angle of the electrode forming surface and the substrate surface on the side surface 24 relative to the normal direction relative to the side surface of the light emitting structure 21 efficiently extracts light propagating in the first conductivity type layer 11 in the lateral direction. Can be preferable. The exposed portion 23 can also function as a light extraction groove by providing the exposed portion 23 in the element operating portion 27 so as to be exposed from the first electrode 1 with respect to the light emitting structure portion 21. If a convex portion, for example, a convex portion as a non-light emitting structure portion where no current is injected is provided in the region exposed from the above, it contributes to the reflection function and the light extraction end.

  As described above, the extending portion 1a of the first electrode 1 is formed by extending from the pad forming region 32 in the light emitting structure 21 and the light emitting region 31, and has a function of diffusing and injecting current into the light emitting structure 21. . The stretched electrode 1a is formed so as to extend longer than the length between the pad portions 1b in relation to the pad portion 1b, so that the stretched electrode portion 1a forming region 33 can be enlarged and the light emission of the light emitting region 31 is uniform. Since it can form as a thing, it is preferable. By appropriately adjusting the in-plane diffusion layer in the first conductivity type layer 11, the second conductivity type layer 12 and the in-plane diffusion of the second (3) electrode, specifically the sheet resistance, the first electrode, By adjusting the distance between the second and third electrodes, a light-emitting element in a desired diffusion state can be obtained.

As shown in FIGS. 9 and 19, the extended electrode portion 1 a outside the light emitting structure 21 is preferably formed longer than the internal extended electrode portion 1 a, whereby the extended electrode portion 1 a of the first electrode 1 surrounding the outside. In, the current can be expanded.
The first electrode 1 may have the same electrode structure for both the pad portion 1b and the extended electrode portion 1a. For example, the first electrode 1 may be separately formed in the shape of the electrode 1 as an electrode for ohmic contact, and the pad electrode may be formed only on the pad portion 1b. A structure to be formed may be formed. 9 and 10, pad portions 1b and 3b are not shown, but indicate openings in the insulating film covering the surface of the element structure on the substrate. As shown in the above embodiment, the pad portion 1b is shown. The extending portion 1a is formed as the same structure.

  The pad portion 1b is preferably formed at the end of the extended electrode portion 1a because the arrangement of the formation regions 32 and 22 and the light emitting region 31 can be made suitable. More preferably, it is preferably formed by extending in one direction from the pad portion 1b, so that suitable current diffusion and light emission are realized in the light emitting region 32.

(Second and third electrodes)
As described above, the second electrode is formed on almost the entire exposed portion 26 of the second conductivity type layer 13 in the light emitting structure portion 21, so as to diffuse the current in the plane in the light emitting structure portion 21. Can function. In the case where the current diffusion layer is provided in the second conductivity type layer 13, the second electrode 2 to be diffused in the plane is not necessary, and the second and third electrodes can be made one electrode. In a nitride semiconductor, in-plane diffusion in the p-type layer is often insufficient, and therefore a third electrode 3 connected to the outside and an electrode wider than that are formed so as to diffuse the third electrode 3 in-plane. A second electrode 2 having a surface is preferably provided.

  As described above, the second electrode 2 is preferably provided as a translucent electrode. As shown in FIGS. 11 to 14, when the substrate 10 side is used as a light extraction surface, the second electrode 2 is reflected on the translucent electrode. A film may be provided, or an electrode structure in which a reflective electrode layer is provided on a translucent electrode layer, or a reflective electrode. In any of the cases where the light extraction surface is the substrate 10 side and the second conductivity type layer 13, it is preferable that the second electrode 2 is preferably a translucent electrode or has a translucent electrode layer.

As electrode materials, nickel (Ni), platinum (Pt) palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), iridium (Ir), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), cobalt (Co), iron (Fe), manganese (Mn), molybdenum (Mo), chromium (Cr), tungsten (W), lanthanum (La), copper (Cu), silver (Ag), metal containing at least one selected from the group consisting of yttrium (Y), an alloy, a laminated structure, and their compounds, for example, conductive oxide There are also nitrides, etc., and conductive metal oxides (oxide semiconductors) are also made of tin-doped indium oxide (Indium Tin) with a thickness of 50 to 10 μm. Oxide; ITO), ZnO, In ₂ O ₃ , or SnO ₂ are used, and they are preferably used because they are advantageous in terms of translucency. In the case of a metal layer, it can be formed of a thin film that ensures translucency. The shape of the electrode is not particularly limited, but may be an electrode layer in which a light-transmitting layer is formed in a planar shape. As shown in FIG. 9, a lattice shape or a stripe shape having a rectangular opening 2b. It is good also as an electrode shape which has an opening part.

  As described above, the third electrode 3 can be formed as the pad portion 3b and the extended electrode portion 3a in the same manner as the first electrode, and at that time, between the first electrode 1 and particularly the extended electrode portion 1a, or The electrodes are formed so as to sandwich them, and preferably, both electrodes 1 and 3 are formed substantially in parallel, more preferably at equal intervals, so that a suitable light emitting region 37 is formed and the light emitting region 32 and the light emitting structure 21 Uniform light emission can be obtained.

  Furthermore, as shown in FIGS. 11 (b) and 17 (a), a plurality of pad portions 3b may be provided. Preferably, the pads 3b are arranged in the arrangement direction 3x so as to function as the extended electrode portions 3a. It is preferable. At this time, in addition to being arranged in a single row as shown in the figure, a zigzag shape, a double row, or the like, as long as the arrangement is similar to the extended electrode portion 3a between the extended electrode portions 1a of the first electrode 1. good. In the case where the third electrode 3 is separated, the element 100 may be further provided with a wiring for electrically connecting them, but FIG. 11B and its sectional view 12 are preferred. As shown in (d), it is preferable that the electrodes 114 are connected to each other on the laminated substrate 104 side, whereby the structure can be simplified and the function of the light emitting element 100 can be improved.

  Here, FIG. 17 illustrates an embodiment of the second and third electrodes. As described above, the pad portions 3b may be arranged in a row 3x to form the extended electrode portions 3a (FIG. 17a), The electrode 2 may be formed by the portion 2a and the electrode forming portion 2b (FIG. 17b). As shown in FIG. 17D, the electrode 2 is partially opened 2b, and the opening 2b and the electrode 2 are formed. The third electrode 3 can also be formed across the substrate, and in the case of a compound electrode such as an oxide, the adhesion of the third electrode can be improved. Further, as a form of the third electrode 3 filling such an opening 2b, as shown in FIG. 17E, a recess 15 is provided in the second conductivity type layer 13 so as to open, and the electrode opening 2b. In addition, the third electrode 3 can be formed across the opening 2b and the electrode 2.

  Moreover, since the 2nd electrode 2 is provided in the light emission structure part 21, in order for light extraction and reflection to function effectively, it is set as an electrode with large translucency so that light extraction and reflection may become effective. Alternatively, it is useful to use a transparent (opening 2b) electrode in any light extraction direction. At this time, as shown in FIG. 17 (c) and 17 (e), corresponding to the electrode 2 opening 2b, the second conductivity type layer 13 is also provided with a recess 15a, so that an upper surface 15c (electrode material interface) ) And the recess bottom surface 15a (protective film, insulating film material interface), an interface between different materials is formed, contributing to suitable light extraction and reflection, and by increasing the inclination angle of the side surface 15b, Reflection on the side surface is strengthened, and light extraction efficiency is improved. Such an uneven portion 15 may be formed on either the end face or the side surface of the element structure 101. For example, the uneven structure 15 is applied to the substrate 10 as shown in FIG. An uneven interface may be formed between the substrate 10 and the semiconductor having the element structure. It is preferable to form such an uneven surface 15 in the light emitting device of the present invention because light extraction is improved and output is improved.

  Here, the first electrode 1 and the third electrode, or the first electrode, the second electrode, and the third electrode can be formed as electrodes of the same structure and material at the same time. Specifically, in order from the exposed portion 23 side, a Ti layer (first layer) and a pad pad for ohmic contact with the first conductivity type layer, such as Ti / Au, Ti / Al, etc. The layer (second layer) is composed of gold, Al, platinum group, the first ohmic layer (for example, W, Mo, Ti are preferable for ohmic contact with the first conductivity type layer), and the pad A structure in which a refractory metal layer (W, Mo, platinum group) is provided as a barrier layer between the second layer, for example, W / Pt / Au, Ti / Rh (second layer a) / Pt (second layer b) ) / Au. In particular, it is preferable to use Rh having excellent reflectivity and barrier properties for the second layer because the light extraction efficiency is improved. In addition, as the second electrode 2 for ohmic of the second conductivity type layer 13, in order from the exposed portion 26 side, in addition to Ni / Au, Co / Au, a conductive oxide such as ITO, a metal of a platinum group element, Rh / Ir, Pt / Pd, etc. are preferably used.

Embodiment 3. FIG.
As Embodiment 3 in this invention, as shown in FIG. 9, the top view (a) of an electrode formation surface, and the top view (b) explaining the structure of the electrode 2 by partially enlarging the dotted-line surrounding part It is. In Embodiment 3, in Embodiment 2, the electrode 2 is a translucent electrode composed of the opening 2b and the formation portion 2a, and as shown in FIG. 9B, the opening 2b has a light emitting structure. The region where the third electrode 3 is formed is provided with the formation portion 2a2 so as to cover the exposed portion 26, so that the ohmic property and the adhesion are improved. . Further, unlike the second embodiment, the extended electrode portions 1a and 3a are formed longer outside the light emitting structure portion 21 and the region 31, and the outside is almost the same as one side of the side surface of the region 31 (21). It is formed along the side with a length, and the extending portion 1a of the first electrode 1 is formed so as to overlap the pad portion 3b forming region 34 and the third electrode 3 extending portion 3a is overlapped with the pad portion 1b forming region 32, respectively. On the other hand, the other internal extending portions 1a and 3a are formed to have end portions in the extended electrode forming regions 33 and 35 between the pad portion forming regions 32 and 34, respectively.

Embodiment 4 FIG.
In the fourth embodiment, as shown in FIG. 10, the structure of the electrodes 1 and 3 and the shape of the light emitting structure 21 are the same as those of the third embodiment, and the electrode 2 is the same as the second embodiment. Further, unlike the second and third embodiments, a concavo-convex processed portion 15 is provided at the interface between the substrate 10 and the first conductive type layer 11 of the element structure portion 101, and the second conductive type layer 11 outside the light emitting structure portion 21 is provided. The exposed portion 25 where the side surface 24 is provided as an inclined surface and the substrate 10 is exposed is further provided outside. As a result, light is diffusely reflected at the substrate interface by the uneven portion 15 to improve the extraction efficiency, and the inclined side surface 24 reflects light propagating mainly in the first conductivity type layer 11 in the lateral direction, thereby This contributes to the extraction of light from the light and improves the output.

Embodiment 5. FIG.
In Embodiment 5, the element laminate 103 bonded to the laminated substrate 104 on the electrode formation surface of the light emitting element 100 of FIG. 11 is shown in a plan view from the substrate 10 side, and FIGS. 12 and 13 showing respective sectional views in FIG. As described above, the first electrode 1 (pad portion 1b) separated on the element side is connected to each other by the base 104 side electrode 112 using the light emitting element 100 as an element laminate, and the separated third electrode 3 (pad portion 3b) is connected. ) Are also electrically connected to each other on the base 104 side, and are mounted and joined. Corresponding to the light emitting element 100 side electrodes 1 and 3 (2), the base body 104 side electrode 112 is provided by being insulated and separated from each other by an insulating film 111 or the like, and an electrode 113 for external connection is provided. The element portion 115 may be provided on the base 104. Here, as shown in an equivalent circuit (b) in FIG. 13A (cross-sectional view along XX ′ in FIG. 11), a current protection element (element structure portion 115) is provided. ), A p-type layer (first conductivity type layer) 115a and an n-type layer (second conductivity type layer) 115b are provided. Here, only one element portion 115 is provided on the base 104, but two or more elements may be provided and connected by external (element 100, mounting base 201) electrodes, base 104 side wiring, etc. The protective element may be mounted on the substrate 104 in the light emitting device 200 (mounting portion 222) and connected to the light emitting element by wire connection or wiring connection.
The light emitting element 100 side electrodes 1, 3 (2) and the electrode 112 of the base body 104 are bonded via the bonding layer 114, but a part of the element 100 side electrode or a part of the base body 104 side electrode 112 is joined. May be part of the bonding layer, and the bonding layer may be formed in place of the pad portions 1b and 3b.

  The substrate 104 may be a normal submount that does not have the element structure 115. The base body 104 and the outside may be wire-connected by a connection electrode 113. An electrode layer that conducts the element structure portion of the base body 104 or the inside and the outside is formed on the mounting surface side, and the electrode 113. Alternatively, the bonding layer 114 may be provided.

(Supporting substrate 17)
In the light emitting device structure 100 of the present invention, the growth substrate 1 used in forming the device stack structure 101 may be removed, and specifically, as shown in FIGS. 16B and 18B. In addition, a part or all of the intervening layer 14 provided between the substrate 1 or the substrate 1 and the laminated structure 101, or a part of the first conductivity type layer 11 in addition to them, is removed as a removal region 16. In other words, unnecessary regions other than the element normal layer structure 101 can be removed. Specifically, as shown in FIG. 16 (b), adhesion / mounting to an element laminated substrate such as a submount, and as shown in FIG. A method of separating the removal portion 17 and the element laminated structure portion 101 by grinding and removing, a partial lamination portion on the substrate 1 by deliquession, melting, and laser irradiation (laser ablation) by a chemical method (etchant); By mechanical polishing / external force, removal by in-plane or element structure within the element structure such as peeling between the substrate 1 and the element stacking structure 101 due to stress, layer breakage due to strain, etc., and combinations of these methods can do.

  Preferably, it is preferably removed as the removal portion 17 of the substrate 1 or the like by transfer by bonding to the support substrate 17 via the bonding layer 18 or the like. At this time, various materials can be used as the material of the support substrate 17 depending on the purpose, and AlN, BN, SiC, GaAs, Si, C, and the like can be used as heat dissipation substrates in order to improve the heat dissipation of the element. (Diamond) is preferably used. As other materials, a semiconductor substrate made of a semiconductor such as Si, SiC, GaAs, GaP, InP, ZnSe, ZnS, ZnO, or a single metal substrate, or two or more kinds having a small non-solid solubility or solid solution limit. A metal substrate made of a composite of the above metals can be used. Specifically, the metal material is one or more metals selected from highly conductive metals such as Ag, Cu, Au, and Pt, and W, Mo, A material composed of one or more metals selected from metals of high hardness such as Cr and Ni can be used. Furthermore, it is preferable to use a Cu—W or Cu—Mo composite as the metal substrate. In consideration of absorption / loss of light of the light emitting element by the substrate and adhesiveness to the element structure 101 (difference in thermal expansion coefficient between the element structure 101 and the substrate 17 or the mounting portion material 203), the material of the support substrate 17 In the case where light is extracted from the substrate 17 side, a light-transmitting material is selected, and a light-transmitting adhesive layer 18 such as a silver paste or an adhesive method that does not involve an adhesive layer is used. When the structure is such that the loss is reduced and the removal portion 16 side is in the light extraction direction, a reflective film such as Al or Ag is provided on the adhesive layer 18 or the substrate 17 or part of the laminated structure 101. For example, it is preferable to increase the external extraction efficiency. As shown in FIG. 18B, when the semiconductor layer stacking order is reversed by transfer, the present invention reverses the first and second conductivity type layers 11 and 13 as indicated by arrows in the figure. It goes without saying that the element structure in the invention is adopted.

(Joining layer 18, joining layer 114, adhesive member 204)
Adhesion between the support substrate 17 and the element structure 101, adhesion between the element structure 101 (100) and the laminated substrate 103, the light emitting element 100, the support substrate 17, the mounting substrate 201 (housing portion 202) of the laminated substrate 103 and the light emitting device 200, In the bonding and bonding, the bonding layers 18 and 114 and the bonding member 204 can be used. As the material and structure, in addition to a mixture such as Ag paste, carbon paste, ITO paste, composite composition (organic substance), solder material, a material excellent in heat resistance in consideration of heat dissipation from the light emitting element 100 As a structure, a metal such as Au, Sn, Pd, or In or a laminate thereof and an alloy are effective for the element of the present invention having a large area, a large current drive, and a high exothermic property. The combination of the first and second eutectic forming layers is preferably Au—Sn, Sn—Pd, or In—Pd. More preferably, the combination uses Sn for the first eutectic formation layer and Au for the second eutectic formation layer. In addition, metal bumps, metal bonding such as Au-Au bonding, and the like can be used.

  In addition, such a bonding layer is provided on the base side (substrate 1, element structure 101 surface, support substrate 17, mounting substrate 201, laminated substrate 101) via a metallizing layer having good adhesion, or the above-described light emitting element. Form an adhesive film (bonding layer) such as a eutectic film, a eutectic multilayer film, or an alloy film through a reflective layer for light reflection, and an anti-oxidation surface protective film on the surface side. Alternatively, a metalizing layer (adhesive layer), a surface protective layer, and an adhesive film (bonding layer) may be formed on the mounting side on the adhesion side, and both may be bonded and bonded.

  As a specific example, as shown in FIG. 15, the bonding layer 204 on the bottom surface of the substrate (sapphire) 10 and the mounting portion 202 of the light emitting element 100 is Al (0.2 μm, reflective layer) / W in order from the substrate side. (0.2 μm) / Pt (0.2 μm), and Au (0.3 μm) / Sn (0.2 μm) 7 pairs and a resurfaced Au (10 nm) layer are formed on the mounting portion 202. An Au layer is also formed on the side, and the light emitting element 100 is bonded by the adhesive layer 204 by heating and pressure bonding. In FIG. 18, as a specific example of the bonding layer 18 for bonding the element structure 101 to the support substrate 17, Ni—Pt—Au—Sn—Au is formed on the p-side electrode of the second conductivity type layer (p-type layer). A multilayer film is formed using a metal substrate 17 having a film thickness of 0.2 μm-0.3 μm-0.3 μm-3.0 μm-0.1 μm and a film thickness of 200 μm made of a composite of Cu 30% and W 70%. An adhesion layer made of Ti, a barrier layer made of Pt, and a second eutectic formation layer made of Au are formed in this order on the surface of the film in a thickness of 0.2 μm-0.3 μm-1.2 μm. Heat and crimp.

(Element stack 103)
In the present invention, when the light emitting element is mounted on the light emitting device 200, as shown in FIGS. 11 to 14, the light emitting element 100 is mounted on a laminated substrate 104 such as a heat sink and a submount, and the element mounting laminate is obtained. As an alternative, the element stack 103 may be formed. At this time, the material of the substrate 104 on which the light emitting element 100 is stacked and mounted is the same as that of the support substrate, and is selected in consideration of its purpose, for example, heat dissipation and light extraction structure. In addition, such an element stack 103 is bonded to the mounting portion 202 of the light emitting device 200 with the surface side facing the bonding surface with the light emitting element 100 as the mounting side.

  In the case of bonding to the laminated substrate 104 of the present invention facing the electrode forming surface side of the light emitting element 100, the electrode structures 112 a and b on the substrate 104 side correspond to the electrodes 1 to 3 on the light emitting element 100 side. When the substrate 104 is bonded to the surface facing the electrode formation surface of the light emitting element 100 (substrate 10), the substrate 104 side electrode is not necessary, and a bonding adhesive layer or the like is provided. However, the light emitting element 100 and an electrode for wire connection may be provided. As shown in the figure, the substrate 104 side electrode 112 may be provided only on the bonding surface side with the light emitting element 10, and is provided on the mounting surface side and the mounting surface side that wraps around to the mounting surface side facing the bonding surface. Even if the electrode 114 of the substrate element 104 and the mounting surface side electrode which are provided with through holes and via holes in the substrate 104 and communicated, connected or electrically bonded from the bonding surface side of the light emitting element 100 to the mounting surface side are provided. good.

  In the figure, one light emitting element 101 is mounted on one laminated substrate 104. However, a plurality of light emitting elements 101 are integrated into one laminated substrate 104 in parallel, in series, or a mixture of both by the substrate 104 side wiring electrode. The stacked body 103 may be connected and mounted, and a plurality of stacked bases 104 may be used for one light emitting element 101, for example, elements having different functions may be used as bases, or a combination thereof. You may form the element laminated body 103 which laminated | stacked two or more any of the laminated base bodies (element) 103 in the vertical direction.

The light emitting element 100 may be covered with a coating film 105 as shown in FIG. 14, and the composition thereof is SiO ₂ , Al ₂ O ₃ , MSiO ₃ (where M is Zn, Ca , Mg, Ba, Sr, Zr, Y, Sn, Pb, etc.), and those containing a phosphor (light converting member 106) are also preferably used. The phosphors are bound to each other by these translucent inorganic members, and the phosphors are further deposited and bound in layers on the LED 100 and the support 104. In addition to this, as the covering layer, a reflection film (Al, Ag, etc.) may be provided in addition to the insulating protective film covering the element structure 100, or DBR may be formed.

(Light conversion member 106, layer 231)
The light conversion member 106 or the light conversion layer 231 in the light emitting device 200 absorbs part of the light from the light emitting element 100 and emits light of a different wavelength, and a material containing a phosphor is used. it can. The light conversion member 106 and the light conversion layer 231 may be formed as the coating film 105 by covering a part or the whole of the light emitting element 100 or a part of the laminated substrate 104 in addition thereto as described above. Good. As a binder of the phosphor, an oxide containing at least one element selected from the group of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb, or alkaline earth metal And the hydroxide is an organometallic compound containing at least one element selected from the group of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb, or an alkaline earth metal (Preferably further containing oxygen). Here, the organometallic compound includes a compound containing an alkyl group or an aryl group. Examples of such organometallic compounds include metal alkoxides, metal diketonates, metal diketonate complexes, and carboxylic acid metal salts.

  Further, as shown in FIG. 15, it may be provided as a part of the sealing member 230 of the light emitting device 200, and is separated from the light emitting element 100 as shown in the figure, on the sealing member 230a or with 230b. It may be formed as a layer 231 provided therebetween, and may be dispersed in the sealing member 230 to contain a light conversion member, so that the sealing member 230 may be used as the light conversion layer 231. 201 and a recessed layer 202 may be provided as a sedimentation layer.

  The phosphor used in the light conversion member of the present invention is for converting visible light or ultraviolet light emitted from the light emitting element into another light emission wavelength, and is light emitted from the semiconductor light emitting layer of the element structure 101. It is also possible to use a phosphor that emits light of a predetermined color when excited by ultraviolet light or visible light.

Specific phosphors include cadmium zinc sulfide activated with copper and yttrium / aluminum / garnet phosphor (hereinafter referred to as “YAG phosphor”) activated with cerium. In particular, at the time of high luminance and long-term use _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: Ce (0 ≦ x <1,0 ≦ y ≦ 1, where, Re Is at least one element selected from the group consisting of Y, Gd, and La). Since this phosphor has a garnet structure, it is resistant to heat, light and moisture, and the peak of the excitation spectrum can be set to around 470 nm. In addition, the emission peak is in the vicinity of 530 nm, and a broad emission spectrum that extends to 720 nm can be provided. In the present invention, the phosphor may be a mixture of two or more kinds of phosphors. That, Al, Ga, Y, the content of La and Gd and Sm are two or more kinds of _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: by mixing Ce phosphor RGB wavelength components can be increased. Since there are variations in the emission wavelength of the semiconductor light emitting device, it is possible to obtain a desired white mixed color light by mixing and adjusting two or more kinds of phosphors. Specifically, by adjusting the amount of phosphors having different chromaticity points in accordance with the emission wavelength of the light emitting element, the arbitrary points on the chromaticity diagram connected between the phosphors and the light emitting element are caused to emit light. be able to. Two or more kinds of phosphors may be present in the coating layer 105, the light conversion portion layer 221 and the member 106 formed on a single layer on the surface of the light emitting device, or one or two types of phosphors may be present in the coating layer formed of two layers. There may be more than one type. In this way, white light is obtained by mixing colors of light from different phosphors. In this case, it is preferable that the average particle diameters and shapes of the phosphors are similar in order to better mix the light emitted from the phosphors and reduce color unevenness. A combination of an aluminum garnet phosphor typified by a YAG phosphor and a phosphor capable of emitting red light, particularly a nitride phosphor, can also be used. These YAG phosphors and nitride phosphors may be mixed and contained in the coating layer, or may be separately contained in the coating layer composed of a plurality of layers. Hereinafter, each phosphor will be described in detail.

The aluminum garnet phosphor used in the present embodiment includes Al and at least one element selected from Y, Lu, Sc, La, Gd, Tb, Eu, and Sm, and Ga and In. A phosphor that includes one selected element and is activated by at least one element selected from rare earth elements, and is a phosphor that emits light when excited by visible light or ultraviolet light emitted from the LED chip 101. is there. For example, in addition to the YAG phosphor described above, Tb _2.95 Ce _0.05 Al ₅ O ₁₂ , Y _2.90 Ce _0.05 Tb _0.05 Al ₅ O ₁₂ , Y _2.94 Ce _0.05 Pr _{0.01 Al 5 O 12, Y 2.90} Ce 0.05 Pr 0.05 Al 5 O 12 and the like. Among these, particularly in the present embodiment, two or more kinds of yttrium / aluminum oxide phosphors containing Y and activated by Ce or Pr and having different compositions are used.

  Blue light emitted from a light emitting element using a nitride compound semiconductor in the light emitting layer and green light and red light emitted from a phosphor whose body color is yellow to absorb blue light, or When yellow light and green light and red light are mixedly displayed, a desired white light emission color display can be performed. In order to cause this color mixture, the light emitting device can contain phosphor powder and bulk in various resins such as epoxy resin, acrylic resin or silicone resin, and translucent inorganic materials such as silicon oxide and aluminum oxide. Thus, the thing containing the fluorescent substance can be variously used according to uses, such as a dot-like thing and a layer-like thing formed so thinly that the light from the LED chip is transmitted. By adjusting the ratio, coating, and filling amount of the phosphor and the translucent inorganic substance and selecting the emission wavelength of the light emitting element, it is possible to provide an arbitrary color tone such as a light bulb color including white.

  In addition, by arranging two or more kinds of phosphors in order with respect to the incident light from the light emitting element, a light emitting device capable of efficiently emitting light can be obtained. That is, on a light emitting element having a reflective member, a color conversion member containing a phosphor that has an absorption wavelength on the long wavelength side and can emit light at a long wavelength, and an absorption wavelength on the longer wavelength side that has a longer wavelength. The reflected light can be used effectively by laminating a color conversion member capable of emitting light at a wavelength. Also, the emission peak wavelength λp is near 510 nm, and has a broad emission spectrum that extends to the vicinity of 700 nm. On the other hand, the YAG phosphor that emits red light, which is an yttrium-aluminum oxide phosphor activated by cerium, has a garnet structure, is resistant to heat, light and moisture, and has a peak wavelength of 420 nm in the excitation absorption spectrum. To about 470 nm. Further, the emission peak wavelength λp is in the vicinity of 600 nm, and has a broad emission spectrum that extends to the vicinity of 750 nm.

  Of the composition of YAG phosphors with a garnet structure, the emission spectrum is shifted to the short wavelength side by substituting part of Al with Ga, and part of Y of the composition is replaced with Gd and / or La. By doing so, the emission spectrum shifts to the long wavelength side. In this way, it is possible to continuously adjust the emission color by changing the composition. Therefore, an ideal condition for converting white light emission by using blue light emission of the nitride semiconductor is provided such that the intensity on the long wavelength side is continuously changed by the composition ratio of Gd.

(Nitride phosphor)
The phosphor used in the present invention contains N and at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn, and C, Si, Ge, Sn, Ti, Zr, and A nitride-based phosphor containing at least one element selected from Hf and activated by at least one element selected from rare earth elements can also be used. The nitride-based phosphor used in the present embodiment refers to a phosphor that emits light by being excited by absorbing visible light, ultraviolet light, and light emitted from the YAG-based phosphor emitted from the LED chip 101. .

  For example, Ca—Ge—N: Eu, Z system, Sr—Ge—N: Eu, Z system, Sr—Ca—Ge—N: Eu, Z system, Ca—Ge—O—N: Eu, Z system, Sr—Ge—O—N: Eu, Z system, Sr—Ca—Ge—ON: Eu, Z system, Ba—Si—N: Eu, Z system, Sr—Ba—Si—N: Eu, Z Type, Ba-Si-ON: Eu, Z type, Sr-Ba-Si-ON: Eu, Z type, Ca-Si-CN: Eu, Z type, Sr-Si-CN : Eu, Z system, Sr-Ca-Si-CN: Eu, Z system, Ca-Si-C-O-N: Eu, Z system, Sr-Si-C-O-N: Eu, Z system Sr—Ca—Si—C—O—N: Eu, Z series, Mg—Si—N: Eu, Z series, Mg—Ca—Sr—Si—N: Eu, Z series, Sr—Mg—Si— N: Eu, Z-based, Mg-Si-O- : Eu, Z series, Mg-Ca-Sr-Si-ON: Eu, Z series, Sr-Mg-Si-ON: Eu, Z series, Ca-Zn-Si-CN: Eu, Z-based, Sr-Zn-Si-CN: Eu, Z-based, Sr-Ca-Zn-Si-CN: Eu, Z-based, Ca-Zn-Si-CN- Eu: Z System, Sr—Zn—Si—C—O—N: Eu, Z system, Sr—Ca—Zn—Si—C—O—N: Eu, Z system, Mg—Zn—Si—N: Eu, Z system Mg-Ca-Zn-Sr-Si-N: Eu, Z system, Sr-Zn-Mg-Si-N: Eu, Z system, Mg-Zn-Si-O-N: Eu, Z system, Mg- Ca-Zn-Sr-Si-ON: Eu, Z system, Sr-Mg-Zn-Si-ON: Eu, Z system, Ca-Zn-Si-Sn-CN: Eu, Z system , Sr-Zn-Si-S -CN: Eu, Z system, Sr-Ca-Zn-Si-Sn-CN: Eu, Z system, Ca-Zn-Si-Sn-C-O-N: Eu, Z system, Sr- Zn—Si—Sn—C—O—N: Eu, Z series, Sr—Ca—Zn—Si—Sn—C—O—N: Eu, Z series, Mg—Zn—Si—Sn—N: Eu, Z-based, Mg-Ca-Zn-Sr-Si-Sn-N: Eu, Z-based, Sr-Zn-Mg-Si-Sn-N: Eu, Z-based, Mg-Zn-Si-Sn-O-N : Eu, Z series, Mg-Ca-Zn-Sr-Si-Sn-ON: Eu, Z series, Sr-Mg-Zn-Si-Sn-ON: Various combinations such as Eu, Z series A phosphor can be manufactured.

  Z, which is a rare earth element, preferably contains at least one of Y, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, and Lu, but Sc, Sm, Tm, Yb may be contained. These rare earth elements are mixed in the raw material in the form of oxides, imides, amides, etc. in addition to simple substances. Rare earth elements mainly have a stable trivalent electron configuration, while Yb, Sm, etc. have a divalent configuration, and Ce, Pr, Tb, etc. have a tetravalent electron configuration. When the rare earth element of the oxide is used, the involvement of oxygen affects the light emission characteristics of the phosphor. In other words, the emission luminance may be reduced by containing oxygen. On the other hand, there are also advantages such as shortening the afterglow. However, when Mn is used, the particle size can be increased by the flux effect of Mn and O, and the luminance can be improved.

The phosphor according to the present invention includes Sr—Ca—Si—N: Eu, Ca—Si—N: Eu, Sr—Si—N: Eu, Sr—Ca—Si—O—N: Eu to which Mn is added. Ca—Si—O—N: Eu, Sr—Si—O—N: Eu-based silicon nitride. The basic constituent elements of this phosphor are represented by the general formula L _X Si _Y N _{(2 / 3X + 4 / 3Y)} : Eu or L _X Si _Y O _Z N _{(2 / 3X + 4 / 3Y-2 / 3Z)} : Eu (L is Sr, Ca, or any one of Sr and Ca.) In the general formula, X and Y are preferably X = 2, Y = 5, or X = 1, Y = 7, but any can be used.

Specifically, the basic constituent elements, Mn is added _{(Sr X Ca 1-X)} 2 Si 5 N 8: Eu, Sr 2 Si 5 N 8: Eu, Ca 2 Si 5 N 8: Eu, Sr _{X Ca 1-X Si 7 N} 10: Eu, SrSi 7 N 10: Eu, CaSi 7 N 10: it is preferable to use a phosphor represented by Eu, during the composition of the phosphor, Mg, At least one selected from the group consisting of Sr, Ca, Ba, Zn, B, Al, Cu, Mn, Cr and Ni may be contained. However, the present invention is not limited to this embodiment and examples.

L is any one of Sr, Ca, Sr and Ca. The mixing ratio of Sr and Ca can be changed as desired.
By using Si for the composition of the phosphor, it is possible to provide an inexpensive phosphor with good crystallinity. Europium Eu, which is a rare earth element, is used for the emission center. Europium mainly has bivalent and trivalent energy levels.

Specific compositions include Sr ₂ Si ₅ N ₈ : Eu, Pr, Ba ₂ Si ₅ N ₈ : Eu, Pr, Mg ₂ Si ₅ N ₈ : Eu, Pr, Zn ₂ Si ₅ N ₈ : Eu, Pr , SrSi ₇ N ₁₀ : Eu, Pr, BaSi ₇ N ₁₀ : Eu, Ce, MgSi ₇ N ₁₀ : Eu, Ce, ZnSi ₇ N ₁₀ : Eu, Ce, Sr ₂ Ge ₅ N ₈ : Eu, Ce, Ba _{2 Ge 5 N 8: Eu, Pr} , Mg 2 Ge 5 N 8: Eu, Pr, Zn 2 Ge 5 N 8: Eu, Pr, SrGe 7 N 10: Eu, Ce, BaGe 7 N 10: Eu, Pr, MgGe ₇ N ₁₀ : Eu, Pr, ZnGe ₇ N ₁₀ : Eu, Ce, Sr _1.8 Ca _0.2 Si ₅ N ₈ : Eu, Pr, Ba _1.8 Ca _0.2 Si ₅ N ₈ : Eu, Ce , _{Mg 1.8 a 0.2 Si 5 N 8: Eu} , Pr, Zn 1.8 Ca 0.2 Si 5 N 8: Eu, Ce, Sr 0.8 Ca 0.2 Si 7 N 10: Eu, La, Ba 0. ₈ Ca _0.2 Si ₇ N ₁₀ : Eu, La, Mg _0.8 Ca _0.2 Si ₇ N ₁₀ : Eu, Nd, Zn _0.8 Ca _0.2 Si ₇ N ₁₀ : Eu, Nd, Sr _{0 .8} Ca _0.2 Ge ₇ N ₁₀ : Eu, Tb, Ba _0.8 Ca _0.2 Ge ₇ N ₁₀ : Eu, Tb, Mg _0.8 Ca _0.2 Ge ₇ N ₁₀ : Eu, Pr, Zn _0.8 Ca _0.2 Ge ₇ N ₁₀ : Eu, Pr, Sr _0.8 Ca _0.2 Si ₆ GeN ₁₀ : Eu, Pr, Ba _0.8 Ca _0.2 Si ₆ GeN ₁₀ : Eu, Pr, _{mg 0.8 Ca 0.2 Si 6 GeN 10} : Eu, Y, Zn _{.8 Ca 0.2 Si 6 GeN 10:} Eu, Y, Sr 2 Si 5 N 8: Pr, Ba 2 Si 5 N 8: Pr, Sr 2 Si 5 N 8: Tb, BaGe 7 N 10: Ce and Although it can manufacture, it is not limited to this.

  The nitride-based phosphor absorbs part of the blue light emitted by the LED chip 100 and emits light in the yellow to red region. Using the nitride phosphor together with the YAG phosphor in the light emitting device 200 having the above-described configuration, the blue light emitted from the LED chip 100 and the yellow to red light by the nitride phosphor are warmed by mixing colors. Provided is a light emitting device that emits white mixed color light. It is preferable that the phosphor added in addition to the nitride-based phosphor contains an yttrium / aluminum oxide phosphor activated with cerium. This is because it can be adjusted to a desired chromaticity by containing the yttrium aluminum oxide phosphor. The yttrium / aluminum oxide phosphor activated with cerium absorbs part of the blue light emitted by the LED chip 101 and emits light in the yellow region.

  Here, the blue light emitted by the LED chip 100 and the yellow light of the yttrium / aluminum oxide fluorescent material emit light blue-white by mixing colors. Therefore, the yttrium / aluminum oxide phosphor and the phosphor emitting red light are mixed together in the translucent coating member 105 and combined with the blue light emitted by the LED chip 100 to produce a white system. Can be provided. Particularly preferred is a white light emitting device whose chromaticity is located on the locus of black body radiation in the chromaticity diagram. However, in order to provide a light emitting device having a desired color temperature, the amount of phosphor of the yttrium / aluminum oxide phosphor and the amount of phosphor of red light emission can be appropriately changed. This light-emitting device that emits white-based mixed color light improves the special color rendering index R9. A conventional white light emitting device consisting only of a combination of a blue light emitting element and an yttrium aluminum oxide phosphor activated with cerium has a special color rendering index R9 of almost 0 at a color temperature of Tcp = 4600K, and a reddish component. Was lacking. For this reason, increasing the special color rendering index R9 has been a problem to be solved. However, in the present invention, the special color rendering index near the color temperature Tcp = 4600K is obtained by using the phosphor emitting red light together with the yttrium aluminum oxide phosphor. R9 can be increased to around 40.

(Light Emitting Device 200)
FIG. 14 shows a light-emitting device 200 in which the light-emitting element 100 and the laminate 103 thereof are mounted on a mounting substrate 201 in the present invention, and relates to Embodiment 6 of the present invention. In the light emitting device 200, the lead portion 210 is fixed by the device base 220, one of the lead portions serves as the mounting lead 210 and functions as the mounting base 201, and the light emitting element 100 (laminated body) is stored in the housing portion (recessed portion) 202. 104) may be mounted via the bonding layer 114 (adhesive layer 204), and the side surface of the concave portion may be used as the reflecting portion 203, and the base 201 may function as the heat radiating portion 205 and be connected to an external radiator. Further, the device base 2020 is provided with an opening to the light extraction portion 223 and a terrace portion 222 provided outside the base 201, and other elements such as a protective element may be mounted. Is sealed with a translucent sealing member 230, and a reflecting portion 203 is also provided outside the recess 202. The lead electrode 210 is connected to the outside by an internal lead 211 inside the base body 220 and an external lead 212 that extends the base lead 220 to the outside. The light emitting element 100 (laminated body 103) is electrically connected to each lead 210 by a wire 250 connection and an electrical joint 204.

  As a seventh embodiment, as shown in FIG. 15, a light emitting device 200 in which a light emitting element 100 is mounted on a mounting base 210 insulated and separated from a lead 210 by an adhesive member 204. 203, and may be connected to an external heat radiator as the heat radiating portion 205. The light emitting element 100 is connected to each internal lead 211 with a wire 250, and the lead 210 extends to the outside and is electrically connected to the outside. Thus, by separating the mounting substrate 201 and the leads 210, a light emitting device with excellent thermal design can be obtained. Further, the light emitting device is formed by sealing the concave portion 202, the reflecting portion 221 of the base 220, and the terrace portion 222 with a light transmissive sealing member 230, and optically optical lens portions are formed on the sealing member 230. Or by forming the sealing member 230 in the shape of an optical lens and providing a desired optical system (lens), light emission with a desired directivity can be obtained.

  The recess inner surfaces 221 and 222 of the package 220 can be embossed to increase the adhesion area, or can be plasma treated to improve the adhesion to the mold member 230. Moreover, it is preferable that the recessed part of the package 220 has a shape (tapered shape) whose side surface becomes wider in the opening direction as shown in the figure. In this case, the light emitted from the light emitting element is reflected by the side surface 221 of the recess and travels toward the front of the package, so that the light extraction efficiency is improved. The package 220 may be formed integrally with the external electrode 212, or the package 220 may be divided into a plurality of parts and combined to be configured by fitting. Such a package 220 can be formed relatively easily by insert molding or the like.

  As the package material, a resin such as polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, epoxy resin, phenol resin, acrylic resin, PBT resin, ceramic, metal, or the like can be used. When a light emitting device using an LED chip that emits light including ultraviolet rays is used at a high output, the resin deteriorates due to ultraviolet rays, the luminous efficiency decreases due to yellowing of the resin, etc., and the lifetime of the light emitting device due to the decrease in mechanical strength It is conceivable that there will be a decrease in Therefore, it is more preferable to use a metal as the package material because the package does not deteriorate like a resin even when an LED chip that emits light including ultraviolet rays is used at a high output.

Various dyes and pigments are preferably used as the colorant for coloring the package 220 in a dark color. Specific examples include _{Cr 2 O 3, MnO 2,} Fe 2 O 3 or carbon black are preferably exemplified.
The adhesion between the LED chip 100 and the package 220 can also be performed with a thermosetting resin or the like. Specifically, an epoxy resin, an acrylic resin, an imide resin, etc. are mentioned. As the external electrode 212, a copper or phosphor bronze plate surface that is subjected to metal plating such as silver, palladium or gold or solder plating is preferably used. As the external electrode 212 provided on the device base 220 such as glass epoxy resin or ceramic, a copper foil or a tungsten layer can be formed.

  The diameter of the conductive wire 250 is preferably φ10 μm or more and φ70 μm or less. Specific examples of the conductive wire 250 include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof. Such a conductive wire 250 can easily connect the electrode of each LED chip 100 to the inner lead, the mount lead, and the like by a wire bonding device.

  The mold member 230 is used to protect the LED chip 100, the conductive wire 250, the coating layers 221 and 105 containing the phosphor from the outside, or to improve the light extraction efficiency according to the use application of the light emitting device. Can be provided. The mold member 230 can be formed using various resins, glass (glass), or the like. As a specific material of the mold member 230, a transparent resin or glass having excellent weather resistance such as an epoxy resin, a urea resin, a silicone resin, or a fluororesin is preferably used. In addition, by adding a diffusing agent to the mold member, the directivity from the LED chip 100 can be relaxed and the viewing angle can be increased. Such a mold member 230 may be made of the same material as the binder and binder of the coating layer, or may be a different material.

  Note that when the LED chip 100 is hermetically sealed together with nitrogen gas or the like using a metal package, the mold member 230 is not an essential component of the present invention. Further, even when a light emitting device is formed using an LED chip that emits ultraviolet rays, a resin that is resistant to ultraviolet rays, such as a fluororesin, can be used as the mold member.

  Further, as another light emitting device 200, a mounting portion 201 (concave portion 202) is provided on a metal base body 220 to mount the light emitting element 100 (laminated body 103), and a lead 210 that is insulated and separated is provided on the base body 220. There are ones hermetically sealed with a base body (made of metal) serving as a cap having a window part, and ones such as COB in which the light emitting element 100 is directly mounted in the recess housing part 202 on a metal substrate.

  As a mounting form of the light emitting element 100 (laminated body 103), a plurality of elements 100 (103) are integratedly mounted in one storage portion 202 (mounting base body 201), and a plurality of base bodies 201 on which the light emitting element 100 (103) is mounted. It can be provided (provided with a plurality of storage portions 202 provided on the base 201) and molded with one apparatus base 220, and can be designed according to desired characteristics.

1 is a plan view of a nitride semiconductor device according to a first embodiment of the present invention. It is sectional drawing about the X-X 'line | wire of FIG. It is a top view of the nitride semiconductor element of a comparative example. 6 is a graph showing the emission intensity on the X-X ′ line of the nitride semiconductor light emitting device of the first embodiment. It is a graph which shows the emitted light intensity on the X-X 'line | wire of the nitride semiconductor light-emitting element of a comparative example. 6 is a graph showing light emission intensity distributions on the light emitting surfaces of the nitride semiconductor light emitting devices of the first embodiment and the comparative example. It is a top view of the nitride semiconductor element of Embodiment 2 which concerns on this invention. 6 is a graph showing the emission intensity on the X-X ′ line of the nitride semiconductor light emitting device of the second embodiment. It is a top view which shows the electrode plane structure in the electrode formation surface of the light emitting element of Embodiment 3 which concerns on this invention, and the elements on larger scale (b) of the electrode 2. FIG. They are the top view which shows the electrode plane structure in the electrode formation surface of the light emitting element of Embodiment 4 which concerns on this invention, its AA sectional view (b), and its partial expanded sectional view (c). It is a top view which shows the laminated body which mounted the light emitting element of Embodiment 5 of this invention in the laminated base. FIG. 12 is a cross-sectional view taken along line C-C ′ of FIG. 11, a cross-sectional view taken along line B-B ′, a cross-sectional view taken along line A-A ′, and a cross-sectional view taken along line D-D ′. FIG. 12 is a sectional view taken along line X-X ′ of FIG. 11. It is a schematic cross section explaining the light-emitting device of Embodiment 6 of this invention. It is a schematic cross section explaining the light-emitting device of Embodiment 7 of this invention. It is a schematic cross section explaining the light emitting element (a) and element laminated body (b) which concern on this invention. It is a typical perspective view explaining embodiment of the electrodes 2 and 3 which concern on this invention. It is a schematic cross section explaining the embodiment of the element lamination structure concerning the present invention. The schematic plan view in the electrode formation surface which compares and demonstrates the element structure (a) of a prior art, and the element structure (c) which concerns on this invention.

Explanation of symbols

1 1st conductivity type layer side 1st electrode (n line electrode),
1a 1st electrode extending electrode part (line-shaped ohmic electrode, electrode for ohmic), 1b 1st electrode electrode pad part (n pad electrode),
2 Second conductivity type layer side electrode (p ohmic electrode),
3 Current spreading conductor, 3a Diffusion line electrode,
3b Electrode base (p pad electrode), 3c Second conductivity type layer contact electrode,
3x electrode arrangement direction, Sn slit, 10 (sapphire) substrate,
11 First conductivity type layer (n-type layer), 12 Light emitting layer (active layer),
13 Second conductivity type layer (p-type layer),
15 Concavity and convexity processed parts (concave bottom surface 15a, concave side surface 15b, convex top surface 15c),
16 removal part, 17 support substrate, 18 bonding layer, 19 support substrate side electrode, 21 light emitting structure part, 22 1st conductivity type layer side electrode formation part,
23 first conductive type layer side electrode exposed portion (separation groove 23a),
24 side surface of the first conductivity type layer side, 25 substrate exposed portion,
26 second conductive type layer exposed portion, 27 element operating portion, 31 in-plane light emitting region,
32 1st electrode pad part formation area, 33 1st electrode extending electrode formation area,
34 3rd electrode pad part formation area, 35 3rd electrode extending electrode formation area,
36 light emitting region (stretched electrode [between, joint part],
37 light emitting region (pad portion [first electrode] forming region),
38 light emitting region (between the interelectrode connecting portion and the third electrode pad portion),
100 light emitting element structure (element chip), 101 element laminated structure,
103 element laminated body, 104 laminated substrate (protective element / submount),
105 coating film, 106 light converting member, 111 insulating film,
112 electrode (for light emitting element bonding), 113 electrode (for external connection),
114 bonding layer, 115 element structure (first conductivity type portion 115a, second conductivity type portion 115b), 200 light emitting device, 201 mounting substrate (housing substrate),
202 storage part (concave part), 203 reflecting part, 204 adhesive member,
205 heat sink, 210 lead electrode, 211 internal lead,
212 external leads, 220 device base, 221 reflector,
222 Mounted external terrace (element placement unit), 223 Light extraction unit,
230 sealing member, 221 light conversion member (layer) (member 106),
240 Optical lens part, 250 Connection wire.

Claims (12)

In the element laminated structure in which the first conductivity type layer and the second conductivity type layer are provided with the light emitting layer interposed therebetween, the first conductivity type layer and the second conductivity type layer are respectively provided on the same surface side as the electrode formation surface. An electrode, a second electrode,
In the electrode forming surface,
An electrode forming region where the first conductivity type layer is exposed and an electrode is provided; and a region where a first conductivity type layer and a second conductivity type layer are provided across the light emitting layer, the second conductivity type layer being A light emitting structure that is exposed to form an electrode, and
The first conductivity type layer is provided with a plurality of first electrodes, and the first electrode includes a pad portion of the first electrode separated from the pad portion forming region and the pad portion forming region from each pad portion. And a stretched electrode portion formed by stretching to a light emitting region including the light emitting structure portion. The light emitting element according to claim 1, wherein the light emitting structure portion is provided between the pad portions in the pad portion forming region. The light emitting structure part between the extended electrode parts or the light emitting structure part separated and attached to the extended electrode part is continuously formed in the light emitting structure part near the end of the extended electrode part in the light emitting region. The light emitting device according to claim 1 or 2. 3. The light emitting device according to claim 1, wherein each of the first electrodes is separated from each other, and the extended electrode portion has a line shape, and the bad portion is provided at one end thereof. The second electrode provided in the light emitting structure in the light emitting region has a third electrode provided on the second electrode, and the third electrode is provided between the extended electrode portions of the first electrode. The light emitting device according to claim 1, wherein a plurality of third electrodes are formed separately from each other. 2. An element laminate in which the light-emitting element according to claim 1 is mounted on a multilayer substrate, wherein the light-emitting element corresponds to the first and second electrodes of the light-emitting element, with the electrode formation surface side as a bonding surface side with the multilayer substrate. Are respectively joined to and electrically connected to the laminated substrate side electrode provided as
A plurality of first electrode pad portions separated from each other are joined and electrically connected to one electrode on the laminated substrate side. In the element stack, the second electrode of the light emitting element or the third electrode on the second electrode is separated from each other, and the plurality of separated electrodes of the second conductivity type layer are arranged on the laminated substrate side. The element stack according to claim 6, wherein the element stack is joined to one electrode and electrically connected to each other. A light-emitting device using the light-emitting element according to claim 1, wherein the light-emitting device includes a light conversion member that converts part of light from the light-emitting element into light having a different wavelength. apparatus. The light conversion member contains Al and contains at least one element selected from Y, Lu, Sc, La, Gd, Tb, Eu, and Sm, and one element selected from Ga and In. 9. The light emitting device according to claim 8, further comprising an aluminum garnet phosphor containing at least one element selected from rare earth elements, which is a garnet phosphor. The light conversion member is (Re _1−x R _x ) ₃ (Al _1−y Ga _y ) ₅ O ₁₂ (0 <x <1, 0 ≦ y ≦ 1, where Re is Y, Gd, La, 9. The light emitting device according to claim 8, further comprising a phosphor represented by at least one element selected from the group consisting of Lu, Tb, and Sm, wherein R is Ce or Ce and Pr. The light conversion member includes N and is selected from at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn, and C, Si, Ge, Sn, Ti, Zr, and Hf. The light-emitting device according to claim 8, further comprising a nitride-based phosphor that includes at least one element and is activated by at least one element selected from rare earth elements. The nitride-based phosphor has a general formula of L _X Si _Y N _{(2 / 3X + 4 / 3Y)} : Eu or L _X Si _Y O _Z N _{(2 / 3X + 4 / 3Y-2 / 3Z)} : Eu (L is Sr Or any one of Ca, Sr, and Ca.) The light-emitting device according to claim 11.

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