JP2005318757A - Switching power supply device - Google Patents

Switching power supply device Download PDF

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JP2005318757A
JP2005318757A JP2004135426A JP2004135426A JP2005318757A JP 2005318757 A JP2005318757 A JP 2005318757A JP 2004135426 A JP2004135426 A JP 2004135426A JP 2004135426 A JP2004135426 A JP 2004135426A JP 2005318757 A JP2005318757 A JP 2005318757A
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semiconductor element
capacitor
diode
transformer
arm
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JP4410599B2 (en
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Takaomi O
啓臣 王
Ryuji Yamada
隆二 山田
Masakazu Gekito
政和 鷁頭
Shingo Hashizume
真悟 橋爪
Nobuyuki Tawada
信幸 多和田
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Fuji Electric FA Components and Systems Co Ltd
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Fuji Electric FA Components and Systems Co Ltd
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<P>PROBLEM TO BE SOLVED: To reduce the copper loss of a transformer and the continuity loss of a semiconductor element of a switching power supply that is composed of: a DC power supply; the transformer; a full-bridge circuit connected to a primary side of the transformer; a rectifying circuit connected to a secondary side of the transformer; and a capacitor that smoothes a rectified output of the rectifying circuit. <P>SOLUTION: A primary-side back-flow current of the transformer 140 is reduced, and the copper loss of the transformer and the continuity loss induced by the semiconductor elements 131 to 134 are reduced by adding the capacitors 221, 225, diodes 222 to 228, and inductances 223, 227 or the like to the secondary side rectifying circuit of the transformer 140. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、スイッチング電源装置、特に一次側で位相シフト制御を行ない、二次側で同期整流を行なうスイッチング電源装置に関する。   The present invention relates to a switching power supply, and more particularly to a switching power supply that performs phase shift control on the primary side and performs synchronous rectification on the secondary side.

電源は電子装置にとって欠かせないものであるが、如何に効率を上げるかが課題となっている。現在は、一次側スイッチング素子のゲート信号を位相シフトさせ、二次側で同期整流させるなどの方法がとられている。
図10に、例えば特許文献1に開示された従来例を示す。
図示のように、一次側は半導体素子131〜134でフルブリッジ回路130が構成され、各半導体素子131〜134と並列にソフトスイッチング用コンデンサ135〜138が接続され、共振インダクタンス112と直流カットコンデンサ113と、トランス140の一次巻線141とが直列接続されている。また、二次側には、トランス140の二次巻線142と、2個の半導体素子231,232と、2個のインダクタンス233,234と、出力コンデンサ211が設けられている。
Power supplies are indispensable for electronic devices, but how to increase efficiency is a challenge. Currently, a method is employed in which the gate signal of the primary side switching element is phase-shifted and synchronously rectified on the secondary side.
FIG. 10 shows a conventional example disclosed in Patent Document 1, for example.
As shown in the drawing, a full bridge circuit 130 is constituted by semiconductor elements 131 to 134 on the primary side, and soft switching capacitors 135 to 138 are connected in parallel to the semiconductor elements 131 to 134, and a resonance inductance 112 and a DC cut capacitor 113 are connected. And the primary winding 141 of the transformer 140 are connected in series. On the secondary side, a secondary winding 142 of the transformer 140, two semiconductor elements 231, 232, two inductances 233, 234, and an output capacitor 211 are provided.

このような構成において、図11に示すゲート信号Q11〜Q14をフルブリッジ回路に与え、トランス140の一次巻線141に交流電圧を印加することにより、二次巻線142に誘導起電力が発生する。この誘導起電力をブリッジ回路230により整流し、出力コンデンサ211および負荷251に供給する。   In such a configuration, the gate signals Q11 to Q14 shown in FIG. 11 are given to the full bridge circuit, and an AC voltage is applied to the primary winding 141 of the transformer 140, whereby an induced electromotive force is generated in the secondary winding 142. . This induced electromotive force is rectified by the bridge circuit 230 and supplied to the output capacitor 211 and the load 251.

すなわち、ゲート信号Q11〜Q14をフルブリッジ回路130に与え、信号S1,S2を二次側の整流回路を形成する半導体素子231,232に与える期間、つまり半導体素子131と133が同時オンする期間と、132と134が同時オンする期間を設ける。この期間において、共振インダクタンス112に蓄積されたエネルギーにより、還流電流が流れる。このとき、対向アームの半導体素子をオンさせる前に、半導体素子と並列接続されるソフトスイッチング用コンデンサに蓄えられた電荷を引き抜き、すなわちゼロ電圧オン動作により、ターンオン時の損失低減を図るようにしている。   That is, the gate signals Q11 to Q14 are supplied to the full bridge circuit 130, and the signals S1 and S2 are supplied to the semiconductor elements 231 and 232 forming the secondary rectifier circuit, that is, the semiconductor elements 131 and 133 are simultaneously turned on. , 132 and 134 are provided at the same time. During this period, a reflux current flows due to the energy accumulated in the resonance inductance 112. At this time, before turning on the semiconductor element of the opposite arm, the charge stored in the soft switching capacitor connected in parallel with the semiconductor element is extracted, that is, the loss at turn-on is reduced by the zero voltage on operation. Yes.

特許第3477029号公報(第4−6頁、図1)Japanese Patent No. 3477029 (page 4-6, FIG. 1)

しかし、従来方式では、還流期間に流れる還流電流により、トランス140の銅損とフルブリッジ回路の半導体素子131〜134の導通損失が大きくなるだけでなく、還流期間に231,232のどちらかの半導体素子にしか電流が流れないため、効率が悪いという問題がある。
したがって、この発明の課題は、トランスの銅損および半導体素子の導通損失を低減することにある。
However, in the conventional method, not only the copper loss of the transformer 140 and the conduction loss of the semiconductor elements 131 to 134 of the full bridge circuit increase due to the return current flowing in the return period, but either of the semiconductors 231 and 232 in the return period. Since current flows only through the element, there is a problem that efficiency is poor.
Accordingly, an object of the present invention is to reduce the copper loss of the transformer and the conduction loss of the semiconductor element.

このような課題を解決するため、請求項1の発明では、第1の半導体素子と第2の半導体素子とを直列接続した第1のアームと、第3の半導体素子と第4の半導体素子とを直列接続した第2のアームと、直流電源とを並列に接続するとともに、前記第1のアームの接続点と第2のアームの接続点間に直流カット用コンデンサと共振用インダクタンスとトランスの一次巻線との直列回路を接続する一方、
第5の半導体素子と第1のインダクタンスとを直列接続した第3のアームと、第6の半導体素子と第2のインダクタンスとを直列接続した第4のアームと、出力コンデンサと、負荷とを並列接続するとともに、前記トランスの二次巻線を前記第3のアームの接続点と前記第4のアームの接続点間に接続し、第1のダイオードと第1のコンデンサとの直列回路を前記第5の半導体素子と並列に、第2のダイオードと第2のコンデンサとの直列回路を前記第6の半導体素子と並列にそれぞれ接続し、第3のダイオードと第3のインダクタンスとの直列回路を前記第1のダイオードと第1のコンデンサとの接続点と前記トランスの二次巻線の第2端子との間に接続し、かつ、第4のダイオードと第4のインダクタンスとの直列回路を前記第2のダイオードと第2のコンデンサとの接続点と前記トランスの二次巻線の第1端子との間に接続し、前記第5,第6の半導体素子を同時にオンする期間を設けることを特徴とする。
In order to solve such a problem, in the invention of claim 1, a first arm in which a first semiconductor element and a second semiconductor element are connected in series, a third semiconductor element, a fourth semiconductor element, Are connected in parallel to each other, and a DC power source is connected in parallel, and a DC cut capacitor, a resonance inductance, and a primary transformer are connected between the connection point of the first arm and the connection point of the second arm. While connecting a series circuit with windings,
A third arm in which the fifth semiconductor element and the first inductance are connected in series, a fourth arm in which the sixth semiconductor element and the second inductance are connected in series, an output capacitor, and a load are connected in parallel. And connecting the secondary winding of the transformer between the connection point of the third arm and the connection point of the fourth arm, and connecting a series circuit of a first diode and a first capacitor to the first circuit. A series circuit of a second diode and a second capacitor is connected in parallel with the sixth semiconductor element, and a series circuit of a third diode and a third inductance is connected in parallel with the semiconductor element of FIG. A series circuit of a fourth diode and a fourth inductance is connected between the connection point of the first diode and the first capacitor and the second terminal of the secondary winding of the transformer. Two die A period of time during which the fifth and sixth semiconductor elements are simultaneously turned on is connected between a connection point between the first capacitor and the second capacitor and the first terminal of the secondary winding of the transformer. To do.

請求項2の発明では、第1の半導体素子と第2の半導体素子とを直列接続した第1のアームと、第3の半導体素子と第4の半導体素子とを直列接続した第2のアームと、直流電源とを並列に接続するとともに、前記第1のアームの接続点と第2のアームの接続点間に直流カット用コンデンサと共振用インダクタンスとトランスの一次巻線との直列回路を接続する一方、
第5の半導体素子と第1のインダクタンスとを直列接続した第3のアームと、第6の半導体素子と第2のインダクタンスとを直列接続した第4のアームと、出力コンデンサと、負荷とを並列接続するとともに、前記トランスの二次巻線を前記第3のアームの接続点と前記第4のアームの接続点間に接続し、第1のダイオードと第1のコンデンサとの直列回路を前記第5の半導体素子と並列に、第2のダイオードと第2のコンデンサとの直列回路を前記第6の半導体素子と並列にそれぞれ接続し、前記第1のインダクタンスと第2のインダクタンスとの接続点と第1のダイオードと第1のコンデンサとの接続点との間に第3のダイオードと第3のインダクタンスとの直列回路を接続し、かつ、前記第2のダイオードと第2のコンデンサとの接続点と前記第3のダイオードと第3のインダクタンスとの接続点間に第4のダイオードを接続し、前記第5,第6の半導体素子を同時にオンする期間を設けることを特徴とする。
According to a second aspect of the invention, a first arm in which a first semiconductor element and a second semiconductor element are connected in series, a second arm in which a third semiconductor element and a fourth semiconductor element are connected in series, A DC power source is connected in parallel, and a series circuit of a DC cut capacitor, a resonance inductance, and a transformer primary winding is connected between the connection point of the first arm and the connection point of the second arm. on the other hand,
A third arm in which the fifth semiconductor element and the first inductance are connected in series, a fourth arm in which the sixth semiconductor element and the second inductance are connected in series, an output capacitor, and a load are connected in parallel. And connecting the secondary winding of the transformer between the connection point of the third arm and the connection point of the fourth arm, and connecting a series circuit of a first diode and a first capacitor to the first circuit. A series circuit of a second diode and a second capacitor is connected in parallel with the sixth semiconductor element, respectively, and a connection point between the first inductance and the second inductance; A series circuit of a third diode and a third inductance is connected between the connection point of the first diode and the first capacitor, and the connection between the second diode and the second capacitor is made. A fourth diode connected between a connection point between said third diode and a third inductance, and the fifth, characterized by providing a period for turning on the sixth semiconductor element simultaneously.

請求項3の発明では、第1の半導体素子と第2の半導体素子とを直列接続した第1のアームと、第3の半導体素子と第4の半導体素子とを直列接続した第2のアームと、直流電源とを並列に接続するとともに、前記第1のアームの接続点と第2のアームの接続点間に直流カット用コンデンサと共振用インダクタンスとトランスの一次巻線との直列回路を接続する一方、
前記トランスの二次側の第1,第2出力端子には第5の半導体素子の一端,第6の半導体素子の一端をそれぞれ接続し、第5の半導体素子の他端と第6の半導体素子の他端とトランスのセンタータップとの間には、第1のインダクタンスと出力コンデンサとの直列回路を接続するとともに前記出力コンデンサと並列に負荷を接続し、前記第5の半導体素子と並列に第1のコンデンサと第1のダイオードとの直列回路、また前記第6の半導体素子と並列に第2のコンデンサと第2のダイオードとの直列回路をそれぞれ接続し、かつ、前記第1のコンデンサと第1のダイオードとの接続点と前記トランスのセンタータップとの間には、第3のダイオードと第2のインダクタンスとの直列回路を接続し、前記第2のコンデンサと第2のダイオードとの接続点と前記第3のダイオードと第2のインダクタンスの接続点との間には第4のダイオードを接続し、前記第5,第6の半導体素子を同時にオンする期間を設けることを特徴とする。
According to a third aspect of the present invention, a first arm in which a first semiconductor element and a second semiconductor element are connected in series, a second arm in which a third semiconductor element and a fourth semiconductor element are connected in series, A DC power source is connected in parallel, and a series circuit of a DC cut capacitor, a resonance inductance, and a transformer primary winding is connected between the connection point of the first arm and the connection point of the second arm. on the other hand,
One end of a fifth semiconductor element and one end of a sixth semiconductor element are connected to the first and second output terminals on the secondary side of the transformer, respectively, and the other end of the fifth semiconductor element and the sixth semiconductor element are connected. A series circuit of a first inductance and an output capacitor is connected between the other end of the transformer and the center tap of the transformer, a load is connected in parallel with the output capacitor, and a second circuit is connected in parallel with the fifth semiconductor element. A series circuit of one capacitor and a first diode, or a series circuit of a second capacitor and a second diode in parallel with the sixth semiconductor element, respectively, and the first capacitor and the first diode A series circuit of a third diode and a second inductance is connected between the connection point of the first diode and the center tap of the transformer, and the second capacitor, the second diode, A fourth diode is connected between a connection point and the connection point of the third diode and the second inductance, and a period for simultaneously turning on the fifth and sixth semiconductor elements is provided. .

この発明によれば、トランス二次側に還流回路を設けるようにしたので、トランスの銅損とフルブリッジを構成する半導体素子の導通損失を低減することが可能になる。また、トランス二次側の整流用半導体素子に同時オン期間を設けるようにしたので、還流期間内に二次側の整流用半導体素子間に電流が分流し、整流用半導体素子が並列接続されたのと同じになり、二次側の整流用半導体素子の導通損失が低減される。   According to this invention, since the reflux circuit is provided on the secondary side of the transformer, it is possible to reduce the copper loss of the transformer and the conduction loss of the semiconductor elements constituting the full bridge. In addition, since a simultaneous ON period is provided in the transformer secondary-side rectifying semiconductor element, current is shunted between the secondary-side rectifying semiconductor elements within the reflux period, and the rectifying semiconductor elements are connected in parallel. Thus, the conduction loss of the rectifying semiconductor element on the secondary side is reduced.

図1はこの発明の第1の実施の形態を示す回路図である。
同図からも明らかなように、この回路は図10に示す従来回路に対し、二次側にコンデンサ221,225と、ダイオード222,224,226,228と、インダクタンス223,227と追加した点が特徴である。
コンデンサ221とダイオード222とを直列接続したアームを半導体素子231に並列に接続し、ダイオード224のアノードをダイオード222のカソードに接続し、ダイオード224のカソードをインダクタンス223の一端に接続し、インダクタンス223の他端を二次巻線142の第2出力端子に接続する。
FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
As is apparent from the figure, this circuit is different from the conventional circuit shown in FIG. 10 in that capacitors 221, 225, diodes 222, 224, 226, 228, and inductances 223, 227 are added on the secondary side. It is a feature.
An arm in which a capacitor 221 and a diode 222 are connected in series is connected in parallel to the semiconductor element 231, an anode of the diode 224 is connected to a cathode of the diode 222, a cathode of the diode 224 is connected to one end of the inductance 223, and The other end is connected to the second output terminal of the secondary winding 142.

また、コンデンサ225とダイオード226とを直列接続したアームを半導体素子232に並列に接続し、ダイオード228のアノードをダイオード226のカソードに接続し、ダイオード228カソードをインダクタンス227の一端に接続し、インダクタンス227の他端を二次巻線142の第1出力端子に接続する。
トランス140の二次巻線142に誘起された電圧がゼロになると、追加回路で還流動作を行ない、トランス140の二次巻線142に流れる電流を対向アームの半導体素子に
分流させ、トランス140の銅損および一次側フルブリッジ回路の導通損失を低減させるようにする。
Further, an arm in which a capacitor 225 and a diode 226 are connected in series is connected in parallel to the semiconductor element 232, an anode of the diode 228 is connected to a cathode of the diode 226, a diode 228 cathode is connected to one end of the inductance 227, and an inductance 227 Is connected to the first output terminal of the secondary winding 142.
When the voltage induced in the secondary winding 142 of the transformer 140 becomes zero, a recirculation operation is performed by an additional circuit, and the current flowing in the secondary winding 142 of the transformer 140 is shunted to the semiconductor element of the opposite arm. Copper loss and conduction loss of the primary side full bridge circuit are reduced.

図2は図1の動作説明図である。
図2にQ11,Q12,Q13,Q14で示すようなゲート信号を、一次側フルブリッジ回路を構成する半導体素子131,132,133,134にそれぞれ与える一方、S1,S2で示すゲート信号を二次側の整流回路を構成する半導体素子231,232にそれぞれ与える。従来回路と同様に、半導体素子131と134がオンすることにより、トランス140の二次巻線142に正方向の電圧Vtr2(示矢参照)が誘起され、整流回路の半導体素子232とインダクタンス233により整流,平滑され、直流化された電圧を出力コンデンサ211を通して負荷251に供給する。このとき、一次側フルブリッジ回路の対向アームの半導体素子132,133をオンさせる前にゲート信号により位相シフト動作をさせ、半導体素子131と133が同時オンする期間が設けられている。
FIG. 2 is a diagram for explaining the operation of FIG.
In FIG. 2, the gate signals as indicated by Q11, Q12, Q13, and Q14 are given to the semiconductor elements 131, 132, 133, and 134 constituting the primary side full bridge circuit, respectively, while the gate signals indicated by S1 and S2 are secondary. To the semiconductor elements 231 and 232 constituting the rectifier circuit on the side. As in the conventional circuit, when the semiconductor elements 131 and 134 are turned on, a positive voltage Vtr2 (see arrow) is induced in the secondary winding 142 of the transformer 140, and the semiconductor element 232 and the inductance 233 of the rectifier circuit The rectified, smoothed and DC voltage is supplied to the load 251 through the output capacitor 211. At this time, before the semiconductor elements 132 and 133 of the opposing arm of the primary side full bridge circuit are turned on, a phase shift operation is performed by the gate signal, and a period in which the semiconductor elements 131 and 133 are simultaneously turned on is provided.

トランス二次巻線に正方向の電圧が誘起されるときは、二次巻線142→インダクタンス233→出力コンデンサ211→半導体素子232→二次巻線142の経路で電流が流れる一方(図3(a)の実線経路参照)、追加された回路では二次巻線142→コンデンサ221→ダイオード224→インダクタンス223→二次巻線142の経路にも電流が流れ(図3(a)の点線経路参照)、コンデンサ221が充電される。インダクタンス223は、この充電電流のピーク値を抑え、損失増加を防止する役割を持つ。   When a positive voltage is induced in the transformer secondary winding, current flows through the path of the secondary winding 142 → the inductance 233 → the output capacitor 211 → the semiconductor element 232 → the secondary winding 142 (FIG. 3 ( In the added circuit, a current also flows in the path of the secondary winding 142 → the capacitor 221 → the diode 224 → the inductance 223 → the secondary winding 142 (see the dotted line path in FIG. 3A). ), The capacitor 221 is charged. The inductance 223 has a role of suppressing the peak value of the charging current and preventing an increase in loss.

トランス140の二次巻線に誘起された電圧がゼロになるとコンデンサ221は放電するが、その経路はコンデンサ221→二次巻線142→半導体素子232→ダイオード222→コンデンサ221となる(図3(a)参照)。この放電動作により、トランス140の二次巻線142に流れ続けようとする電流を打ち消す傾向にある。このため、トランス140の二次巻線142に流れる電流が半導体素子231に分流する(図3(c)参照)。   When the voltage induced in the secondary winding of the transformer 140 becomes zero, the capacitor 221 is discharged, but the path is the capacitor 221, the secondary winding 142, the semiconductor element 232, the diode 222, and the capacitor 221 (FIG. 3 ( a)). This discharge operation tends to cancel the current that continues to flow through the secondary winding 142 of the transformer 140. For this reason, the current flowing through the secondary winding 142 of the transformer 140 is shunted to the semiconductor element 231 (see FIG. 3C).

ここでは、従来例と異なり二次側整流回路の半導体素子231,232が同時に導通する期間、すなわち図2に示す期間Tbを設け、この期間において半導体素子231を既にオンさせている。その結果、図2の期間Tbでは、二次巻線142に流れる電流Itr2(図2参照)が従来より低下する。そのため、一次側回路に流れる還流電流が減少し、フルブリッジ回路130の半導体素子の導通損失と、トランス140の一次巻線141,二次巻線142の銅損が低減される。また、この期間では、半導体素子232に流れる電流Is1が半導体素子231に分流し、この2個の半導体素子231と232とが並列接続されたと同じことになるため、導通損失が低減される。   Here, unlike the conventional example, a period in which the semiconductor elements 231 and 232 of the secondary rectifier circuit are simultaneously conducted, that is, a period Tb shown in FIG. 2 is provided, and the semiconductor element 231 is already turned on in this period. As a result, in the period Tb in FIG. 2, the current Itr2 (see FIG. 2) flowing through the secondary winding 142 is lower than that in the prior art. Therefore, the return current flowing through the primary circuit is reduced, and the conduction loss of the semiconductor element of the full bridge circuit 130 and the copper loss of the primary winding 141 and the secondary winding 142 of the transformer 140 are reduced. Further, during this period, the current Is1 flowing through the semiconductor element 232 is shunted to the semiconductor element 231, and the two semiconductor elements 231 and 232 are connected in parallel, so that conduction loss is reduced.

同じ原理で、トランス140の二次巻線142に負方向に電圧が誘起されるとき、コンデンサ225が充放電され、この還流動作により半導体素子231に流れる電流が半導体素子232に分流され、Tc期間に二次巻線142に流れる電流Itr2が従来例より低減する。その結果、フルブリッジ回路の半導体素子の導通損失と、トランス140の一次巻線141,二次巻線142の銅損が低減される。また、この期間では、半導体素子231に流れる電流Is2が半導体素子232に分流し、この2個の半導体素子231と232とが並列接続されたことと同じであるため、導通損失が低減される。
また、二次回路で還流動作を行なうことにより、半導体素子133,134がターンオンする際に一次側に流れる電流が小さくなるため、ソフトスイッチング用コンデンサ137,138を省略することができる。
On the same principle, when a voltage is induced in the secondary winding 142 of the transformer 140 in the negative direction, the capacitor 225 is charged / discharged, and the current flowing through the semiconductor element 231 is shunted to the semiconductor element 232 by this return operation, and the Tc period In addition, the current Itr2 flowing in the secondary winding 142 is reduced as compared with the conventional example. As a result, the conduction loss of the semiconductor element of the full bridge circuit and the copper loss of the primary winding 141 and the secondary winding 142 of the transformer 140 are reduced. Further, during this period, the current Is2 flowing through the semiconductor element 231 is divided into the semiconductor element 232, which is the same as the two semiconductor elements 231 and 232 being connected in parallel, so that conduction loss is reduced.
Further, by performing the return operation in the secondary circuit, the current flowing to the primary side when the semiconductor elements 133 and 134 are turned on is reduced, so that the soft switching capacitors 137 and 138 can be omitted.

図4にこの発明の第2の実施の形態を示す。ここでは、従来例に対し二次側にコンデンサ221,225と、ダイオード222,224,226,228と、インダクタンス227とを追加して構成される。そして、コンデンサ221とダイオード222との直列接続アームを半導体素子231に並列接続し、コンデンサ225とダイオード226との直列接続アームを半導体素子232に並列接続し、ダイオード222のカソードとインダクタンス233,234の接続点との間に、ダイオード224とインダクタンス227との直列接続アームを接続し、ダイオード228のカソードをダイオード224のカソードに接続し、ダイオード228のアノードをダイオード226のカソードに接続する。   FIG. 4 shows a second embodiment of the present invention. Here, capacitors 221 and 225, diodes 222, 224, 226, and 228 and an inductance 227 are added to the secondary side of the conventional example. A series connection arm of the capacitor 221 and the diode 222 is connected in parallel to the semiconductor element 231, and a series connection arm of the capacitor 225 and the diode 226 is connected in parallel to the semiconductor element 232, and the cathode of the diode 222 and the inductances 233 and 234 are connected. A series connection arm of a diode 224 and an inductance 227 is connected between the connection point, the cathode of the diode 228 is connected to the cathode of the diode 224, and the anode of the diode 228 is connected to the cathode of the diode 226.

図4でも、トランス140の二次巻線142に誘起された電圧がゼロになると、追加回路で還流動作を行ない、トランス140の二次巻線142に流れる電流を対向アームの半導体素子に分流させ、トランス140の銅損および一次側フルブリッジ回路の導通損失を低減させるのは図1と同様で、異なるのはコンデンサ221,225の充電経路だけであるので、以下では主として充放電時の動作について説明する。   Also in FIG. 4, when the voltage induced in the secondary winding 142 of the transformer 140 becomes zero, the additional circuit performs a reflux operation, and the current flowing in the secondary winding 142 of the transformer 140 is shunted to the semiconductor element of the opposing arm. The copper loss of the transformer 140 and the conduction loss of the primary-side full bridge circuit are the same as in FIG. 1 except that only the charging path of the capacitors 221 and 225 is different. explain.

トランス二次巻線に正方向の電圧が誘起されるときは、二次巻線142→インダクタンス233→出力コンデンサ211→半導体素子232→二次巻線142の経路で電流が流れる一方(図6(a)の実線経路参照)、追加された回路では、二次巻線142→コンデンサ221→ダイオード224→インダクタンス227→出力コンデンサ211→半導体素子232→二次巻線142の経路にも電流が流れ(図6(a)の点線経路参照)、コンデンサ221が充電される。インダクタンス227は、この充電電流のピーク値を抑え、損失増加を防止する役割を持つ。   When a voltage in the positive direction is induced in the transformer secondary winding, current flows through the path of secondary winding 142 → inductance 233 → output capacitor 211 → semiconductor element 232 → secondary winding 142 (FIG. 6 ( In the added circuit, a current also flows through the path of the secondary winding 142 → the capacitor 221 → the diode 224 → the inductance 227 → the output capacitor 211 → the semiconductor element 232 → the secondary winding 142 (see a) of FIG. The capacitor 221 is charged, see the dotted line path in FIG. The inductance 227 has a role of suppressing the peak value of the charging current and preventing an increase in loss.

トランス140の二次巻線に誘起された電圧がゼロになると、コンデンサ221が放電される。放電経路は、コンデンサ221→二次巻線142→半導体素子232→ダイオード222→コンデンサ221となる(図6(b)参照)。この放電動作により、図1の場合と同様に、トランス140の二次巻線に流れる電流が半導体素子231に分流し、図7に示すように、期間Tbの期間では、二次巻線に流れる電流Itr2が従来例より低下する。その結果、フルブリッジ回路の半導体素子の導通損失と、トランス140の一次巻線141,二次巻線142の銅損を低減できる。また、この期間では、半導体素子232に流れる電流Is1が半導体素子231に分流し((図6(c)参照))、この2個の半導体素子231と232とが並列接続されたことと同じであるため、導通損失が低減される。   When the voltage induced in the secondary winding of the transformer 140 becomes zero, the capacitor 221 is discharged. The discharge path is capacitor 221 → secondary winding 142 → semiconductor element 232 → diode 222 → capacitor 221 (see FIG. 6B). By this discharge operation, the current flowing through the secondary winding of the transformer 140 is shunted to the semiconductor element 231 as in the case of FIG. 1, and flows through the secondary winding during the period Tb as shown in FIG. The current Itr2 is lower than that of the conventional example. As a result, the conduction loss of the semiconductor element of the full bridge circuit and the copper loss of the primary winding 141 and the secondary winding 142 of the transformer 140 can be reduced. In this period, the current Is1 flowing through the semiconductor element 232 is shunted to the semiconductor element 231 (see FIG. 6C), which is the same as the two semiconductor elements 231 and 232 being connected in parallel. Therefore, the conduction loss is reduced.

同じ原理で、トランス140の二次巻線142に負方向に電圧が誘起されるとき、コンデンサ225が充放電され、この還流動作により半導体素子231に流れる電流が半導体素子232に分流され、Tc期間に二次巻線142に流れる電流Itr2が従来例より低減する。その結果、フルブリッジ回路の半導体素子の導通損失と、トランス140の一次巻線141,二次巻線142の銅損が低減される。また、この期間では、半導体素子231に流れる電流Is2が半導体素子232に分流し、この2個の半導体素子231と232とが並列接続されたことと同じであるため、導通損失が低減される。
また、二次回路で還流動作を行なうことにより、半導体素子133,134がターンオンする際に一次側に流れる電流が小さくなるため、ソフトスイッチング用コンデンサ137,138を省略することができる。
On the same principle, when a voltage is induced in the secondary winding 142 of the transformer 140 in the negative direction, the capacitor 225 is charged / discharged, and the current flowing through the semiconductor element 231 is shunted to the semiconductor element 232 by this return operation, and the Tc period In addition, the current Itr2 flowing in the secondary winding 142 is reduced as compared with the conventional example. As a result, the conduction loss of the semiconductor element of the full bridge circuit and the copper loss of the primary winding 141 and the secondary winding 142 of the transformer 140 are reduced. Further, during this period, the current Is2 flowing through the semiconductor element 231 is divided into the semiconductor element 232, which is the same as the two semiconductor elements 231 and 232 being connected in parallel, so that conduction loss is reduced.
Further, by performing the return operation in the secondary circuit, the current flowing to the primary side when the semiconductor elements 133 and 134 are turned on is reduced, so that the soft switching capacitors 137 and 138 can be omitted.

図7にこの発明の第3の実施の形態を示す。この例では、トランス140の二次側にはセンタータップ(中間端子)が設けられるとともに、コンデンサ221,225と、ダイオード222,224,226,228とインダクタンス236とを追加した点が特徴である。そして、コンデンサ225とダイオード226とを直列接続した回路を半導体素子232と並列に、コンデンサ221とダイオード222とを直列接続した回路を半導体素子231と並列に接続し、トランス二次側センタータップとダイオード226のアノードの間に、ダイオード228とインダクタンス236との直列回路を接続し、ダイオード224のアノードをダイオード228のアノードに、ダイオード224のカソードをダイオード222のアノードにそれぞれ接続する。   FIG. 7 shows a third embodiment of the present invention. This example is characterized in that a center tap (intermediate terminal) is provided on the secondary side of the transformer 140, and capacitors 221, 225, diodes 222, 224, 226, 228, and an inductance 236 are added. A circuit in which a capacitor 225 and a diode 226 are connected in series is connected in parallel with the semiconductor element 232, a circuit in which a capacitor 221 and a diode 222 are connected in series is connected in parallel with the semiconductor element 231, and a transformer secondary side center tap and a diode are connected. A series circuit of a diode 228 and an inductance 236 is connected between the anodes of 226, the anode of the diode 224 is connected to the anode of the diode 228, and the cathode of the diode 224 is connected to the anode of the diode 222.

図7のような構成において、図8にQ11,Q12,Q13,Q14で示すようなゲート信号を、一次側フルブリッジ回路を構成する半導体素子131,132,133,134にそれぞれ与える一方、S1,S2で示すゲート信号を二次側の整流回路を構成する半導体素子231,232にそれぞれ与える。このとき従来回路と同様に、半導体素子131と134がオンすることにより、トランス140の二次巻線142に正方向の電圧Vtr2が誘起され、追加回路のコンデンサ221の充放電動作が以下のように行なわれる。   In the configuration as shown in FIG. 7, gate signals as indicated by Q11, Q12, Q13, and Q14 in FIG. 8 are given to the semiconductor elements 131, 132, 133, and 134 constituting the primary side full bridge circuit, respectively, while S1, The gate signal indicated by S2 is supplied to the semiconductor elements 231 and 232 constituting the secondary rectifier circuit, respectively. At this time, as in the conventional circuit, when the semiconductor elements 131 and 134 are turned on, a positive voltage Vtr2 is induced in the secondary winding 142 of the transformer 140, and the charge / discharge operation of the capacitor 221 in the additional circuit is as follows. To be done.

トランス140の二次巻線142に正方向の電圧Vtr2が誘起されるときは、二次巻線142→半導体素子232→インダクタンス235→出力コンデンサ211→二次巻線142の経路で電流が流れる一方、二次巻線143に電圧Vtr3が誘起されるため、コンデンサ221が充電される。その充電経路は、二次巻線143→インダクタンス236→ダイオード224→コンデンサ221→二次巻線143となる(図9(a)点線経路参照)。二次巻線142の経路にも電流が流れ(図9(a)の実線経路参照)、コンデンサ211が充電される。
二次巻線に誘起された電圧がゼロになると、コンデンサ221が放電される。放電経路は、コンデンサ221→ダイオード222→半導体素子232→二次巻線142→コンデンサ221となる(図9(b)参照)。
When a positive voltage Vtr2 is induced in the secondary winding 142 of the transformer 140, a current flows through a path of the secondary winding 142 → semiconductor element 232 → inductance 235 → output capacitor 211 → secondary winding 142. Since the voltage Vtr3 is induced in the secondary winding 143, the capacitor 221 is charged. The charging path is as follows: secondary winding 143 → inductance 236 → diode 224 → capacitor 221 → secondary winding 143 (see the dotted line path in FIG. 9A). Current also flows through the path of the secondary winding 142 (see the solid line path in FIG. 9A), and the capacitor 211 is charged.
When the voltage induced in the secondary winding becomes zero, the capacitor 221 is discharged. The discharge path is capacitor 221 → diode 222 → semiconductor element 232 → secondary winding 142 → capacitor 221 (see FIG. 9B).

このような還流動作を行なうことにより、半導体素子232に流れる電流が半導体素子231に分流される(図9(c)参照)。その結果、図8に示すように、この還流期間において、トランス140の一次141に流れる電流が二次巻線142に流れる電流と143に流れる電流の差分に比例するため、従来例より低下する。こうして、フルブリッジ回路の半導体素子の導通損失と、トランス140の一次巻線141の銅損が低減される。また、この期間では、半導体素子232流れる電流Is1が半導体素子231に分流し、この2個の半導体素子231と232とが並列接続されたことと同じであるため、導通損失が低減される。   By performing such a reflux operation, the current flowing through the semiconductor element 232 is divided into the semiconductor element 231 (see FIG. 9C). As a result, as shown in FIG. 8, the current flowing through the primary 141 of the transformer 140 is proportional to the difference between the current flowing through the secondary winding 142 and the current flowing through 143 during this return period, and thus is lower than the conventional example. Thus, the conduction loss of the semiconductor element of the full bridge circuit and the copper loss of the primary winding 141 of the transformer 140 are reduced. Further, during this period, the current Is1 flowing through the semiconductor element 232 is shunted to the semiconductor element 231, and is the same as the two semiconductor elements 231 and 232 connected in parallel, so that conduction loss is reduced.

同じ原理で、二次巻線142に負方向の電圧が誘起されるときも、同じように損失低減ができる。
また、二次回路で還流動作を行なうことにより、半導体素子133,134がターンオンするときに、一次側に流れる電流が小さくなるため、ソフトスイッチング用コンデンサ137,138を省略することができる。
Based on the same principle, when a negative voltage is induced in the secondary winding 142, loss can be similarly reduced.
Further, by performing the recirculation operation in the secondary circuit, when the semiconductor elements 133 and 134 are turned on, the current flowing to the primary side is reduced, so that the soft switching capacitors 137 and 138 can be omitted.

この発明の第1の実施の形態を示す回路図1 is a circuit diagram showing a first embodiment of the present invention. 図1の制御方法を説明する波形図Waveform diagram illustrating the control method of FIG. 図1の動作説明図で、(a)はコンデンサ221の充電経路説明図、(b)はコンデンサ221の放電経路説明図、(c)は二次側整流回路の分流動作説明図1A is an operation explanatory diagram of FIG. 1, (a) is an explanatory diagram of a charging path of the capacitor 221, (b) is an explanatory diagram of a discharging path of the capacitor 221, and (c) is an explanatory diagram of a shunting operation of the secondary side rectifier circuit. この発明の第2の実施の形態を示す回路図Circuit diagram showing a second embodiment of the present invention 図4の制御方法を説明する波形図Waveform diagram illustrating the control method of FIG. 図4の動作説明図で、(a)はコンデンサ221の充電経路説明図、(b)はコンデンサ221の放電経路説明図、(c)は二次側整流回路の分流動作説明図4A and 4B are explanatory diagrams of operation, in which FIG. 4A is an explanatory diagram of a charging path of the capacitor 221, FIG. 4B is an explanatory diagram of a discharging path of the capacitor 221, and FIG. この発明の第3の実施の形態を示す回路図Circuit diagram showing a third embodiment of the present invention 図7の制御方法を説明する波形図Waveform diagram illustrating the control method of FIG. 図7の動作説明図で、(a)はコンデンサ221の充電経路説明図、(b)はコンデンサ221の放電経路説明図、(c)は二次側整流回路の分流動作説明図FIGS. 7A and 7B are operation explanatory views of FIG. 7, in which FIG. 7A is an explanatory view of a charging path of the capacitor 221, FIG. 7B is an explanatory view of a discharging path of the capacitor 221, and FIG. 従来例を示す回路図Circuit diagram showing a conventional example 図10の制御方法を説明する説明図Explanatory drawing explaining the control method of FIG.

符号の説明Explanation of symbols

111…直流電源、131,132,133,134,231,232…半導体素子、113,135,136,137,138,211,221,225…コンデンサ、122,233,234,235,236…インダクタンス、222,224,226,228…ダイオード、251…負荷、140…トランス、141,142,143…トランス巻線。

111 ... DC power supply, 131,132,133,134,231,232 ... semiconductor element, 113,135,136,137,138,211,221,225 ... capacitor, 122,233,234,235,236 ... inductance, 222, 224, 226, 228 ... diode, 251 ... load, 140 ... transformer, 141, 142, 143 ... transformer winding.

Claims (3)

第1の半導体素子と第2の半導体素子とを直列接続した第1のアームと、第3の半導体素子と第4の半導体素子とを直列接続した第2のアームと、直流電源とを並列に接続するとともに、前記第1のアームの接続点と第2のアームの接続点間に直流カット用コンデンサと共振用インダクタンスとトランスの一次巻線との直列回路を接続する一方、
第5の半導体素子と第1のインダクタンスとを直列接続した第3のアームと、第6の半導体素子と第2のインダクタンスとを直列接続した第4のアームと、出力コンデンサと、負荷とを並列接続するとともに、前記トランスの二次巻線を前記第3のアームの接続点と前記第4のアームの接続点間に接続し、第1のダイオードと第1のコンデンサとの直列回路を前記第5の半導体素子と並列に、第2のダイオードと第2のコンデンサとの直列回路を前記第6の半導体素子と並列にそれぞれ接続し、第3のダイオードと第3のインダクタンスとの直列回路を前記第1のダイオードと第1のコンデンサとの接続点と前記トランスの二次巻線の第2端子との間に接続し、かつ、第4のダイオードと第4のインダクタンスとの直列回路を前記第2のダイオードと第2のコンデンサとの接続点と前記トランスの二次巻線の第1端子との間に接続し、前記第5,第6の半導体素子を同時にオンする期間を設けることを特徴とするスイッチング電源装置。
A first arm in which a first semiconductor element and a second semiconductor element are connected in series, a second arm in which a third semiconductor element and a fourth semiconductor element are connected in series, and a DC power supply are connected in parallel. And connecting a series circuit of a DC cut capacitor, a resonance inductance, and a primary winding of a transformer between the connection point of the first arm and the connection point of the second arm,
A third arm in which the fifth semiconductor element and the first inductance are connected in series, a fourth arm in which the sixth semiconductor element and the second inductance are connected in series, an output capacitor, and a load are connected in parallel. And connecting the secondary winding of the transformer between the connection point of the third arm and the connection point of the fourth arm, and connecting a series circuit of a first diode and a first capacitor to the first circuit. A series circuit of a second diode and a second capacitor is connected in parallel with the sixth semiconductor element, and a series circuit of a third diode and a third inductance is connected in parallel with the semiconductor element of FIG. A series circuit of a fourth diode and a fourth inductance is connected between the connection point of the first diode and the first capacitor and the second terminal of the secondary winding of the transformer. Two die A period of time during which the fifth and sixth semiconductor elements are simultaneously turned on is connected between a connection point between the first capacitor and the second capacitor and the first terminal of the secondary winding of the transformer. Switching power supply.
第1の半導体素子と第2の半導体素子とを直列接続した第1のアームと、第3の半導体素子と第4の半導体素子とを直列接続した第2のアームと、直流電源とを並列に接続するとともに、前記第1のアームの接続点と第2のアームの接続点間に直流カット用コンデンサと共振用インダクタンスとトランスの一次巻線との直列回路を接続する一方、
第5の半導体素子と第1のインダクタンスとを直列接続した第3のアームと、第6の半導体素子と第2のインダクタンスとを直列接続した第4のアームと、出力コンデンサと、負荷とを並列接続するとともに、前記トランスの二次巻線を前記第3のアームの接続点と前記第4のアームの接続点間に接続し、第1のダイオードと第1のコンデンサとの直列回路を前記第5の半導体素子と並列に、第2のダイオードと第2のコンデンサとの直列回路を前記第6の半導体素子と並列にそれぞれ接続し、前記第1のインダクタンスと第2のインダクタンスとの接続点と第1のダイオードと第1のコンデンサとの接続点との間に第3のダイオードと第3のインダクタンスとの直列回路を接続し、かつ、前記第2のダイオードと第2のコンデンサとの接続点と前記第3のダイオードと第3のインダクタンスとの接続点間に第4のダイオードを接続し、前記第5,第6の半導体素子を同時にオンする期間を設けることを特徴とするスイッチング電源装置。
A first arm in which a first semiconductor element and a second semiconductor element are connected in series, a second arm in which a third semiconductor element and a fourth semiconductor element are connected in series, and a DC power supply are connected in parallel. And connecting a series circuit of a DC cut capacitor, a resonance inductance, and a primary winding of a transformer between the connection point of the first arm and the connection point of the second arm,
A third arm in which the fifth semiconductor element and the first inductance are connected in series, a fourth arm in which the sixth semiconductor element and the second inductance are connected in series, an output capacitor, and a load are connected in parallel. And connecting the secondary winding of the transformer between the connection point of the third arm and the connection point of the fourth arm, and connecting a series circuit of a first diode and a first capacitor to the first circuit. A series circuit of a second diode and a second capacitor is connected in parallel with the sixth semiconductor element, respectively, and a connection point between the first inductance and the second inductance; A series circuit of a third diode and a third inductance is connected between the connection point of the first diode and the first capacitor, and the connection between the second diode and the second capacitor is made. And said third diode and fourth diode between a connection point between the third inductance connected, the fifth, sixth switching power supply apparatus characterized by providing a period for turning on at the same time the semiconductor device.
第1の半導体素子と第2の半導体素子とを直列接続した第1のアームと、第3の半導体素子と第4の半導体素子とを直列接続した第2のアームと、直流電源とを並列に接続するとともに、前記第1のアームの接続点と第2のアームの接続点間に直流カット用コンデンサと共振用インダクタンスとトランスの一次巻線との直列回路を接続する一方、
前記トランスの二次側の第1,第2出力端子には第5の半導体素子の一端,第6の半導体素子の一端をそれぞれ接続し、第5の半導体素子の他端と第6の半導体素子の他端とトランスのセンタータップとの間には、第1のインダクタンスと出力コンデンサとの直列回路を接続するとともに前記出力コンデンサと並列に負荷を接続し、前記第5の半導体素子と並列に第1のコンデンサと第1のダイオードとの直列回路、また前記第6の半導体素子と並列に第2のコンデンサと第2のダイオードとの直列回路をそれぞれ接続し、かつ、前記第1のコンデンサと第1のダイオードとの接続点と前記トランスのセンタータップとの間には、第3のダイオードと第2のインダクタンスとの直列回路を接続し、前記第2のコンデンサと第2のダイオードとの接続点と前記第3のダイオードと第2のインダクタンスの接続点との間には第4のダイオードを接続し、前記第5,第6の半導体素子を同時にオンする期間を設けることを特徴とするスイッチング電源装置。
A first arm in which a first semiconductor element and a second semiconductor element are connected in series, a second arm in which a third semiconductor element and a fourth semiconductor element are connected in series, and a DC power supply are connected in parallel. And connecting a series circuit of a DC cut capacitor, a resonance inductance, and a primary winding of a transformer between the connection point of the first arm and the connection point of the second arm,
One end of a fifth semiconductor element and one end of a sixth semiconductor element are connected to the first and second output terminals on the secondary side of the transformer, respectively, and the other end of the fifth semiconductor element and the sixth semiconductor element are connected. A series circuit of a first inductance and an output capacitor is connected between the other end of the transformer and the center tap of the transformer, a load is connected in parallel with the output capacitor, and a second circuit is connected in parallel with the fifth semiconductor element. A series circuit of one capacitor and a first diode, or a series circuit of a second capacitor and a second diode in parallel with the sixth semiconductor element, respectively, and the first capacitor and the first diode A series circuit of a third diode and a second inductance is connected between the connection point of the first diode and the center tap of the transformer, and the second capacitor and the second diode are connected to each other. A fourth diode is connected between a connection point and the connection point of the third diode and the second inductance, and a period for simultaneously turning on the fifth and sixth semiconductor elements is provided. Switching power supply.
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