JP2005311231A - Ceramic substrate for semiconductor device, and method of manufacturing semiconductor device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a ceramic substrate and a method of manufacturing a semiconductor device, in which the ceramic substrate on which a plurality of semiconductor chips are mounted and sealed by a resin, is diced with a recognition mark as a reference and the center of a dicing groove can be made to coincide with the center of a dividing groove. <P>SOLUTION: In a ceramic substrate on which a plurality of semiconductor chips are mounted and a resin-sealing body for covering the semiconductor chips is formed on the principal surface, there are provided a split groove 2 which is formed on the principal surface of the ceramic substrate 1, for dividing the ceramic substrate for each semiconductor chip and a recognition mark 3 used to dice only the resin sealing body, before splitting the ceramic substrate. The split groove is formed on the recognition mark so as to divide the recognition mark into pieces. Since the recognition mark, having a fixed width is present right near both sides of the split groove without fail, dicing with the recognition mark as a reference easily makes the center of the dicing groove of the resin-sealing body coinciding with the center of the split groove on the ceramic substrate, thereby stabilizing the shape after splitting. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a ceramic substrate on which a plurality of semiconductor chips are mounted and resin-sealed, and a method of manufacturing a semiconductor device using the ceramic substrate.

A semiconductor chip such as silicon sealed by a conventional ceramic substrate and a resin sealing body is formed as follows. A semiconductor technique for manufacturing such a semiconductor device will be described with reference to FIGS. 7 is a plan view and a side view of a ceramic substrate on which a semiconductor chip is mounted, FIG. 8 is a partially enlarged plan view showing a part of the ceramic substrate plan view shown in FIG. 7, and FIG. FIG. 10 is a partial cross-sectional view of a ceramic substrate on which a sealing body is formed, and FIG. 10 is a partial cross-sectional view in which the ceramic substrate is divided into individual semiconductor devices by dividing each ceramic chip.
The ceramic substrate 101 made of alumina or the like usually has a size of about 10 to 100 mm square. A dividing groove 102 is provided on the main surface of the ceramic substrate 101 in order to divide it into individual semiconductor devices.

In FIG. 7, eight vertical and horizontal divided grooves 102 are drawn, but normally, a 10 mm square semiconductor device is cut out by providing nine vertical and horizontal divided grooves on a 100 mm square ceramic substrate 101 (the semiconductor chip at this time). Is 2.5 mm square). A recognition mark 103 for dicing only the resin sealing body is attached to the peripheral portion of the ceramic substrate 101 in the vicinity of the dividing groove 102 before the ceramic substrate 101 is divided. As shown in FIG. 8, the recognition mark 103 is, for example, a pair of 0.2 mm wide and 1.0 mm long rectangular patterns having the same size separated by 0.1 mm. The dividing groove 102 is formed so as to pass between a pair of rectangular patterns constituting the recognition mark 103.
On the main surface of the ceramic substrate 101 on which the semiconductor chip is mounted, a wiring pattern (not shown) such as Cu for electrically connecting the electrodes of the semiconductor chip is formed. Usually, the recognition mark 103 is formed in the process of forming the wiring pattern. Therefore, the recognition mark 103 uses the same Cu or the like as the wiring pattern. The recognition mark 103 is further plated with Au to enhance the recognition function.

As shown in FIG. 9, a semiconductor chip 105 is mounted on such a ceramic substrate 101. The semiconductor chip 105 is a semiconductor chip or flip chip bonding using a bonding wire (not shown) such as Au that electrically connects an electrode (not shown) of the semiconductor chip 105 and a wiring pattern on the main surface of the ceramic substrate 101. Any type of semiconductor chip may be used. The semiconductor chip 105 mounted on the ceramic substrate 101 is sealed with a resin sealing body 104 such as epoxy. A dicing groove 106 is inserted into the resin sealing body 104 while recognizing with the recognition mark 103, and the ceramic substrate 101 is divided for each semiconductor chip 105 to form a plurality of semiconductor devices.
A conventional semiconductor device in which a semiconductor element formed on an insulating layer is sealed with resin is described in Patent Document 1.

In the conventional semiconductor device as shown in FIG. 9, the step of forming the dividing groove on the ceramic substrate and the step of forming the recognition mark (same as the step of forming the wiring pattern) are performed in different steps. If the steps are different in this way, the positional deviation between both the dividing groove and the recognition mark is large, and the dividing groove may overlap the recognition mark (see FIG. 8). Further, when dicing is performed based on the recognition mark, as shown in FIG. 9, the center of the dicing groove and the center of the dividing groove do not coincide with each other, so that the semiconductor device 100, which is a product after division, has an irregular shape as shown in FIG. There was a thing. In addition, when using the dividing groove as a recognition mark for dicing, binarization processing is performed in which the substrate surface is white and the groove is black. However, if the substrate itself is black, the illumination conditions for making the surface white It was difficult and misunderstood.
Japanese Patent Laid-Open No. 2000-260918 (FIG. 1)

  The present invention has been made under such circumstances, and in a ceramic substrate on which a plurality of semiconductor chips are mounted and resin-sealed, the dicing groove center and the division groove center can be matched by dicing based on the recognition mark standard. It is an object of the present invention to provide a ceramic substrate and a method of manufacturing a semiconductor device using the ceramic substrate.

  In order to achieve the above object, one aspect of a ceramic substrate for a semiconductor device according to the present invention is a ceramic substrate comprising a plurality of semiconductor chips and a resin sealing body that covers the semiconductor chips formed on a main surface. A recognition groove formed on the main surface of the ceramic substrate for dividing the ceramic substrate into semiconductor chips and a recognition mark for dicing, wherein the recognition groove divides the recognition mark. It is characterized by being formed above.

  Further, according to one aspect of the method for manufacturing a semiconductor device of the present invention, a step of forming a recognition mark on the surface of the ceramic substrate, a step of forming a dividing groove on the surface of the ceramic substrate so as to divide the recognition mark, A step of mounting a plurality of semiconductor chips on the ceramic substrate; a step of forming a resin sealing body on the ceramic substrate to cover the semiconductor chip; and a tip of the resin sealing body from the surface of the ceramic substrate Forming a dicing groove on the basis of the recognition mark so as to enter the dividing groove deeply, dividing the resin sealing body and the ceramic substrate along the dicing groove and the dividing groove, And a step of individually cutting the semiconductor chip sealed by the resin sealing body and the ceramic substrate.

In the present invention, there is always a recognition mark having a certain width in the immediate vicinity of both sides of the dividing groove provided on the ceramic substrate. Therefore, if dicing is performed based on the recognition mark, the dicing groove center of the resin sealing body and the dividing groove of the ceramic substrate are provided. The centers can be easily matched, and the shape after division can be stabilized.
In addition, when metal plating is used for the recognition mark, it is possible to easily create illumination conditions during the binarization process and to stabilize the dicing.

  The present invention is characterized in that after the recognition mark larger than the position variation range of the division groove is formed on the ceramic substrate, the division groove is formed so as to divide the recognition mark. Hereinafter, embodiments of the invention will be described with reference to examples.

First, Embodiment 1 will be described with reference to FIGS.
FIG. 1 is a plan view and a side view of a ceramic substrate for a semiconductor device on which a semiconductor chip is mounted, FIG. 2 is a partially enlarged plan view showing a part of the ceramic substrate plan view shown in FIG. 1, and FIG. FIG. 4 is a partial cross-sectional view of a ceramic substrate that is mounted and formed with a resin sealing body, and is divided into individual semiconductor devices by dividing the ceramic substrate for each semiconductor chip. The ceramic substrate 1 is made of alumina, aluminum nitride, silicon nitride, or the like, and has a size of about 10 to 100 mm square, for example. A dividing groove 2 is provided on the main surface of the ceramic substrate 1 so as to be divided into individual semiconductor devices. In FIG. 1, eight dividing grooves 2 are drawn in the vertical and horizontal directions. For example, a 10 mm square semiconductor device is cut out by providing eight vertical and horizontal dividing grooves on the ceramic substrate 1. The semiconductor chip at this time is, for example, 2.5 mm square. The plurality of recognition marks 3 are formed on the peripheral portion of the ceramic substrate 1, and the division grooves 2 are formed on the main surface of the ceramic substrate 1 so as to divide each recognition mark 3.

The recognition mark 3 is attached for dicing the resin sealing body before the ceramic substrate 1 is divided. Actually, the recognition mark 3 is attached in order to dice part or all of the resin sealing body or all of the resin sealing body and part of the ceramic substrate. The recognition mark 3 has a pattern of 0.5 mm width and 1.0 mm length, for example. The dividing groove 2 is formed so as to divide the pattern constituting the recognition mark 3.
On the main surface of the ceramic substrate 1 on which the semiconductor chip is mounted, a wiring pattern (not shown) such as Cu that electrically connects the electrodes of the semiconductor chip is formed. And the recognition mark 3 is formed in the process of forming this wiring pattern. Accordingly, the recognition mark 3 is made of the same Cu as the wiring pattern. The recognition mark 3 is further plated with Au to enhance its recognition function.

As shown in FIG. 3, a semiconductor chip 5 is mounted on the ceramic substrate 1. The semiconductor chip 5 is a semiconductor chip or flip chip bonding having a bonding wire (not shown) such as Au that electrically connects a chip electrode (not shown) and a wiring pattern formed on the main surface of the ceramic substrate 1. Any type of semiconductor chip may be used. The semiconductor chip 5 mounted on the ceramic substrate 1 is sealed with a resin sealing body 4 such as epoxy. A dicing groove 6 is inserted into the resin sealing body 4 while recognizing with the recognition mark 3 to divide the ceramic substrate 1 for each semiconductor chip 5 to form a plurality of semiconductor devices.
Since there is always a recognition mark with a certain width in the immediate vicinity of both sides of the dividing groove provided on the ceramic substrate, the dicing groove center of the resin encapsulated body and the dividing groove center of the ceramic substrate coincide with each other when dicing according to the recognition mark standard. Can be easily performed and the shape after division can be stabilized.

Next, Example 2 will be described with reference to FIGS.
In this embodiment, a semiconductor device formed using the ceramic substrate described in Embodiment 1 will be described. 5 and 6 are process cross-sectional views of the ceramic substrate for explaining the manufacturing process of the semiconductor device of this embodiment, and show a cross-sectional view of a portion along the line AA ′ of FIG. First, powders such as silica (SiO ₂ ), silicon nitride (SiN), and aluminum nitride (AlN) are dissolved in a solvent, processed into a predetermined shape, and dried to form a semi-lived ceramic substrate 1 (FIG. 5 ( a)). Next, a wiring pattern made of Cu or the like is formed on the main surface of the ceramic substrate 1 in a semi-lived state. At this time, the base layer 3a of the recognition mark is formed on the same main surface in the same process (FIG. 5B).

  Next, a plurality of dividing grooves 2 are formed vertically and horizontally so as to divide the base layer 3a on the surface of the ceramic substrate 1 in a semi-lived state. The dividing groove 2 is formed to a depth of about 100 μm from the main surface of the ceramic substrate 1. Thereafter, the ceramic substrate 1 in a semi-lived state is fired at a predetermined temperature (FIG. 5C). Next, in this state, a plating layer 3b such as Au is formed on the surface of the base layer 3a of the recognition mark. The recognition mark 3 includes a base layer 3a and a plating layer 3b (FIG. 5D). The ceramic substrate 1 shown in FIG. 5D shows a cross section of a portion along the line AA ′ of the ceramic substrate 1 of FIG.

  Next, a plurality of semiconductor chips 5 are mounted one by one so as to be surrounded by the dividing grooves 2 formed vertically and horizontally on the main surface of the fired ceramic substrate 1 (FIG. 6A). Thereafter, the ceramic substrate 1 is put in a mold, and a resin sealing body 4 such as an epoxy resin is formed on the ceramic substrate 1 so as to cover the semiconductor chip 5 by a transfer molding method or the like (FIG. 6B). Next, a dicing groove 6 having a tip deeper than the main surface of the ceramic substrate 1 and entering the dividing groove 2 is formed in the resin sealing body 4. The dicing groove 6 enters from the main surface of the ceramic substrate 1 to a depth of about 50 μm (FIG. 6C). Thereafter, the ceramic substrate 1 is divided along the dividing grooves 2, and the semiconductor device 10 constituted by the semiconductor chip 5 covered with the ceramic substrate 1 and the resin sealing body 4 is individually cut (see FIG. 4).

  In this way, there is always a recognition mark with a certain width in the immediate vicinity of both sides of the dividing groove provided on the ceramic substrate. The centers can be easily matched and the shape after division can be stabilized. In addition, when metal plating is used for the recognition mark, it is possible to easily create illumination conditions during binarization processing and to stabilize dicing, and a semiconductor device having no irregular shape as shown in FIG. Is formed.

The top view and side view of a ceramic substrate which mounts the semiconductor chip concerning Example 1 of the present invention. The partial enlarged plan view which shows a part (B area | region) of the ceramic substrate top view shown in FIG. The fragmentary sectional view of the ceramic substrate which mounted the semiconductor chip which concerns on Example 1 of this invention, and formed the resin sealing body. 1 is a partial cross-sectional view in which a ceramic substrate according to Embodiment 1 of the present invention is divided into individual semiconductor devices by dividing each ceramic chip. It is process sectional drawing of the ceramic substrate explaining the manufacturing process of the semiconductor device which concerns on Example 2 of this invention, and sectional drawing of the part along the AA 'line of Fig.1 (a). It is process sectional drawing of the ceramic substrate explaining the manufacturing process of the semiconductor device which concerns on Example 2 of this invention, and sectional drawing of the part along the AA 'line of Fig.1 (a). The top view and side view of the ceramic substrate which mounts the conventional semiconductor chip. The partial enlarged plan view which shows a part (A area | region) of the ceramic substrate top view shown in FIG. The fragmentary sectional view of the ceramic substrate which mounted the conventional semiconductor chip and formed the resin sealing body. The fragmentary sectional view which divided the conventional ceramic substrate for every semiconductor chip, and cut it into the individual semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 ... Ceramic substrate 2, 102 ... Dividing groove 3, 103 ... Recognition mark 3a ... Underlayer of recognition mark 3b ... Plated layer of recognition mark 4, 104 ... Resin sealing Stopper 5, 105 ... Semiconductor chip 6, 106 ... Dicing groove 10, 100 ... Semiconductor device

Claims (5)

In a ceramic substrate on which a plurality of semiconductor chips are mounted and a resin sealing body that covers the semiconductor chips is formed on a main surface, the ceramic substrate is formed on the main surface of the ceramic substrate, and the ceramic substrate is divided for each semiconductor chip Split grooves and a dicing recognition mark,
The ceramic substrate for a semiconductor device, wherein the dividing groove is formed on the recognition mark so as to divide the recognition mark. The ceramic substrate for a semiconductor device according to claim 1, wherein the recognition mark has a surface plated with gold. The ceramic substrate for a semiconductor device according to claim 1, wherein the recognition mark is larger than a position variation range of the division grooves. Forming a recognition mark on the ceramic substrate surface;
Forming a dividing groove on the ceramic substrate surface so as to divide the recognition mark;
Mounting a plurality of semiconductor chips on the ceramic substrate;
Forming a resin sealing body on the ceramic substrate and covering the semiconductor chip;
Forming a dicing groove on the basis of the recognition mark so that a tip of the resin sealing body enters the dividing groove deeper than the ceramic substrate surface;
Dividing the resin sealing body and the ceramic substrate along the dicing grooves and the dividing grooves, and individually cutting the semiconductor chips sealed by the resin sealing body and the ceramic substrate. A method for manufacturing a semiconductor device. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the recognition mark is larger than a position variation range of the dividing groove.

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