JP2005303263A - Method of manufacturing photoelectric conversion film lamination type solid-state image pickup device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To facilitate the manufacturing of vertical wirings for a photoelectric conversion film lamination type solid-state image pickup device. <P>SOLUTION: The method relates to manufacturing the photoelectric conversion film lamination type solid-state image pickup device in which a plurality of photoelectric conversion films, which are sandwiched between common electrode films and pixel electrode film supporting pixels, are laminated on a semiconductor substrate 1 via a dielectric. In the method, vertical wirings 37, 40 are manufactured previously and coated by an insulating material 65. The vertical wirings 37, 40 are connected to a signal reading circuit formed on the surface of the semiconductor substrate 1; pass through lower layer photoelectric conversion films, common electrode films that sandwich the photoelectric conversion films, and the dielectric; and are connected to the pixel electrode film that sandwiches the upper layer photoelectric conversion film. Then, the lower layer photoelectric conversion films, common electrode films sandwiching the photoelectric conversion films, and dielectric are laminated. This enables manufacturing vertical wirings without being broken and facilitates the lamination of the photoelectric conversion films or the like. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a photoelectric conversion film stacked solid-state imaging device configured by stacking a photoelectric conversion film on a semiconductor substrate on which a signal readout circuit is formed.

  As a prototype element of the photoelectric conversion film laminated solid-state imaging device, for example, there is one described in Patent Document 1 below. In this solid-state imaging device, three photosensitive layers are stacked on a semiconductor substrate, and red (R), green (G), and blue (B) electrical signals detected in each photosensitive layer are transmitted to the surface of the semiconductor substrate. Reading is performed by the MOS circuit formed in the circuit.

  A solid-state imaging device having such a configuration has been proposed in the past. Thereafter, a large number of light receiving portions (photodiodes) are integrated on the surface portion of the semiconductor substrate, and red (R), green (G), and blue are integrated on each light receiving portion. The CCD type image sensor and CMOS type image sensor in which the color filters of each color (B) are laminated have advanced remarkably, and now, an image sensor in which millions of light receiving parts (pixels) are integrated on one chip is used as a digital still camera. It comes to be installed.

  However, the CCD type image sensor and the CMOS type image sensor have progressed to their limits, and the aperture size of one light receiving part is about 2 μm, which is close to the wavelength order of incident light, and the manufacturing yield is poor. Faced with the problem.

  In addition, the upper limit of the amount of photocharge accumulated in one miniaturized light receiving portion is as small as about 3000 electrons, which makes it difficult to express 256 gradations neatly. For this reason, it is difficult to expect an image sensor more than the current type in the CCD type or the CMOS type in terms of image quality and sensitivity.

  Therefore, as a solid-state imaging device that solves these problems, the solid-state imaging device proposed in Patent Literature 1 has attracted attention, and the image sensors described in Patent Literature 2, Patent Literature 3, and Patent Literature 4 are known. It has come to be newly proposed.

  In the image sensor described in Patent Document 2, ultrafine particles of silicon are dispersed in a medium to form a photoelectric conversion layer, and a plurality of photoelectric conversion layers having different ultrafine particle sizes are stacked on a semiconductor substrate. In each photoelectric conversion layer, electrical signals corresponding to the received light amounts of red, green and blue are generated.

  The same applies to the image sensor described in Patent Document 3, in which three nanosilicon layers having different particle diameters are stacked on a semiconductor substrate, and red, green, and blue electrical signals detected by each nanosilicon layer are detected. Is read out to the storage diode formed on the surface portion of the semiconductor substrate.

  In the image sensor described in Patent Document 4, a red detection photodiode and a blue detection photodiode are provided on a surface portion of a semiconductor substrate in the same manner as a conventional CCD or CMOS image sensor, and a green detection photodiode is provided. Instead, only a single layer of a green color photoelectric conversion layer is provided on the semiconductor substrate.

JP 58-103165 A Japanese Patent No. 3405099 Japanese Patent Laid-Open No. 2002-83946 FIG. 5 and FIG. 6B of Japanese Patent Laid-Open No. 2003-332551.

  When manufacturing a photoelectric conversion film laminated solid-state imaging device, the manufacturing on the semiconductor substrate side is the same as a conventional CCD type or CMOS type image sensor, and the manufacturing technology of the semiconductor device can be used as it is. In addition, the photoelectric conversion film laminated on the semiconductor substrate, and the electrode film and the insulating film sandwiching the photoelectric conversion film also use a film forming method using a printing technique, a spray method, a vacuum evaporation method, a sputtering method, a CVD method, or the like. Can be manufactured.

  However, it is not easy to manufacture a wiring that connects the signal readout circuit manufactured on the semiconductor substrate and the electrode of the photoelectric conversion film laminated thereon. This is because it is necessary to make vertical wiring in a direction perpendicular to the film plane of the electrode film.

  For example, in a solid-state imaging device in which three layers of R, G, and B photoelectric conversion films are stacked, red (R), green (G), and blue (G) color signals are read out by one pixel. Because of the configuration, it is necessary to provide three vertical wires per pixel, and the three vertical wires have different heights.

  For example, after an insulating film is formed on a semiconductor substrate, a portion to be provided with vertical wiring is etched and embedded with a conductor, and after a photoelectric conversion film is formed, a portion with vertical wiring is etched and embedded with a conductor. The vertical wiring can be manufactured by repeatedly performing the above operation.

  However, this operation has a problem that alignment is difficult, and if a positional shift occurs, the vertical wiring is disconnected and the photoelectric conversion signal cannot be read out. Moreover, in order to manufacture millions of pixels in one solid-state imaging device, three times as many vertical wirings are required. Further, the photoelectric conversion signal generated in the upper photoelectric conversion film is converted into a signal on the semiconductor substrate. The vertical wiring connected to the readout circuit needs to be manufactured while being insulated so as not to be in electrical contact with the photoelectric conversion film and electrode film in the intermediate portion, which makes it difficult to manufacture and increases the manufacturing cost. .

  An object of the present invention is to provide a method of manufacturing a photoelectric conversion film stacked solid-state imaging device having a vertical wiring that can reduce the manufacturing cost and can connect a photoelectric conversion signal generated in the photoelectric conversion film to a signal readout circuit without disconnection. It is to provide.

  The method of manufacturing a photoelectric conversion film stacked solid-state imaging device according to the present invention includes a photoelectric conversion film stacked solid-state imaging in which a photoelectric conversion film sandwiched between a common electrode film and a pixel electrode film corresponding to a pixel is stacked on a semiconductor substrate. In the device manufacturing method, a vertical wiring that is connected to a signal readout circuit formed on the surface portion of the semiconductor substrate and reaches the tip of the corresponding pixel electrode film is formed, and then the vertical wiring is embedded. And forming the pixel electrode film having the tip connected to the surface of the layer.

  With this configuration, the vertical wiring can connect the signal readout circuit and the corresponding pixel electrode film without disconnection.

  In the method for producing a photoelectric conversion film stack type solid-state imaging device of the present invention, the photoelectric conversion film is a photoelectric conversion film that detects a green incident light amount, and the constituent of the layer is a red color provided on a surface portion of the semiconductor substrate. A color filter for transmitting red light and a light transmitting blue light provided on each of the detection photodiode and the blue detection photodiode, and an insulating layer in which the color filter is embedded.

  With this configuration, it is possible to provide a photoelectric conversion film stacked solid-state imaging device that is easy to manufacture.

  According to the method of manufacturing a photoelectric conversion film stacked solid-state imaging device of the present invention, a plurality of photoelectric conversion films sandwiched between a common electrode film and a pixel electrode film corresponding to a pixel are stacked on a semiconductor substrate via an insulating film. In the method for manufacturing a conversion film stack type solid-state imaging device, the photoelectric conversion film in the lower layer and connected to the signal readout circuit formed on the surface portion of the semiconductor substrate and the common sandwiching the photoelectric conversion film The vertical wiring connected to the pixel electrode film that penetrates the electrode film and the insulating film and sandwiches the upper photoelectric conversion film is first manufactured and covered with an insulating material, and then the lower photoelectric conversion film, The common electrode film and the insulating film sandwiching the photoelectric conversion film are stacked.

  With this configuration, the vertical wiring can be manufactured without disconnection, and the layers can be easily stacked. Therefore, it is possible to reduce the manufacturing cost and improve the manufacturing yield of the photoelectric conversion film stacked solid-state imaging device.

  The method for manufacturing a photoelectric conversion film stack type solid-state imaging device of the present invention comprises three photoelectric conversion films for red detection, green detection, and blue detection in order from the shortest detection wavelength in order from the top. The common electrode film provided on two of the photoelectric conversion films is shared.

  With this configuration, it is possible to easily manufacture a photoelectric conversion film stacked solid-state imaging device capable of color imaging with three primary colors.

  The manufacturing method of the photoelectric conversion film laminated solid-state imaging device of the present invention includes four photoelectric conversion films for red detection, green detection, blue detection, and emerald color detection from the top in order of short detection wavelength. The common electrode film provided on two adjacent photoelectric conversion films among the photoelectric conversion films is shared.

  With this configuration, it is possible to easily manufacture a photoelectric conversion film stacked solid-state imaging device capable of capturing a color image according to human visibility.

  According to the present invention, important vertical wirings can be manufactured easily and without disconnection in a photoelectric conversion film stacked solid-state imaging device, so that manufacturing costs can be reduced and manufacturing yields can be improved.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic cross-sectional view of two pixels of a photoelectric conversion film stacked solid-state imaging device according to an embodiment of the present invention. Before describing a method for manufacturing a vertical wiring (hereinafter also referred to as a columnar electrode) according to the present embodiment, the configuration of a photoelectric conversion film stacked solid-state imaging device will be described with reference to FIG.

  In this example, a CMOS type signal readout circuit is formed on the surface of the semiconductor substrate 1 which is the base of the photoelectric conversion film stacked solid-state imaging device. That is, on the surface portion of the P well layer 1 formed on the n-type silicon substrate, a high concentration impurity region 2 for red signal storage, a MOS circuit 3 for red signal readout, and a high concentration impurity for green signal storage. A region 4, a green signal readout MOS circuit 5, a blue signal storage high concentration impurity region 6, and a blue signal readout MOS circuit 7 are formed.

  Each MOS circuit 3, 5, 6 comprises a source and drain impurity region formed on the surface of the semiconductor substrate and a gate electrode formed via a gate insulating film 8. An insulating film 9 is laminated and planarized on the gate insulating film 8 and the gate electrode, and a light shielding film 10 is laminated thereon. Since the light shielding film is often formed of a metal thin film, an insulating film 11 is further formed thereon.

  A photoelectric conversion film serving as a light receiving portion is stacked on the semiconductor substrate having such a configuration. First, the pixel electrode film 31 divided for each pixel is formed on the insulating film 11. The pixel electrode film 31 is electrically connected to the high concentration impurity region 2 of the corresponding pixel by the columnar electrode 32. This columnar electrode 32 is electrically insulated from other than the pixel electrode film 31 and the high concentration impurity region 2.

  A red detection photoelectric conversion film 33 is laminated on the entire surface of the pixel electrode film 31 without being divided for each pixel, and a transparent common electrode film 34 having a single structure is similarly formed on the upper layer. Are laminated.

  In the present embodiment, a single green detection photoelectric conversion film 35 is laminated on the common electrode film 34 without being divided for each pixel, and a transparent pixel electrode divided for each pixel is formed thereon. A film 36 is stacked. This pixel electrode film 36 is electrically connected to the high concentration impurity region 4 of the corresponding pixel by a columnar electrode 37. The columnar electrode 37 is electrically insulated from other than the pixel electrode film 36 and the high concentration impurity region 4.

  A transparent insulating film 38 is laminated on the pixel electrode film 36, and a transparent pixel electrode film 39 divided for each pixel is laminated thereon. Each pixel electrode film 39 is electrically connected to the high concentration impurity region 6 of the corresponding pixel by a columnar electrode 40. This columnar electrode 40 is electrically insulated from areas other than the pixel electrode film 39 and the high concentration impurity region 6.

  On the pixel electrode film 39, a single-layer blue detection photoelectric conversion film 41 is laminated without being divided for each pixel, and a single-layer transparent common electrode film 42 is similarly laminated thereon. A transparent protective film 43 is laminated on the uppermost layer.

  In the photoelectric conversion film stacked solid-state imaging device having such a configuration, when light from a subject is incident, a photoelectric charge corresponding to the amount of blue light incident is generated in the photoelectric conversion film 41, and the common electrode film 42 and the pixel electrode film 39. When a voltage is applied between the two, a blue light photoelectric charge flows into the high concentration impurity region 6.

  Similarly, a photoelectric charge corresponding to the amount of green light in the incident light is generated in the photoelectric conversion film 35, and when a voltage is applied between the common electrode film 34 and the pixel electrode film 36, the green light photoelectric charge is generated. Flows into the high concentration impurity region 4.

  Similarly, a photoelectric charge corresponding to the amount of red light in the incident light is generated in the photoelectric conversion film 33, and when a voltage is applied between the common electrode film 34 and the pixel electrode film 31, a green light photoelectric charge is generated. Flows into the high concentration impurity region 2. Then, signals corresponding to the signal charges in the high concentration impurity regions 2, 4, 6 are read out to the outside by the MOS circuits 3, 5, 7.

  In this embodiment, the signal is read out by the MOS circuit formed on the semiconductor substrate. However, the charges accumulated in the high-concentration impurity regions 2, 4 and 6 for color signal accumulation are the same as those in the conventional CCD image sensor. Further, it is also possible to adopt a configuration in which it is moved along the vertical transfer path and read out along the horizontal transfer path.

  The embodiment shown in FIG. 1 is an example of a photoelectric conversion film stacked solid-state imaging device that detects three primary colors of red (R), green (G), and blue (B), but has a configuration that can detect four colors. It is also possible to do. FIG. 2 is a schematic cross-sectional view of two pixels of a photoelectric conversion film stacked solid-state imaging device that detects four colors, and is an intermediate color (GB: emerald) of green (G) and blue (B) with respect to the configuration of FIG. The difference is that the photoelectric conversion film 50 for detecting the color) and the electrode film are laminated.

  For example, an advantage of detecting an emerald (GB) color having a wavelength of 480 to 520 nm is to correct red according to human visual sensitivity. As shown in FIG. 3 as α, β, and γ, human visual sensitivity is negative in green (G), red (R), and blue (B). For this reason, even if color reproduction is performed by detecting only positive sensitivities of R, G, and B with a solid-state imaging device, an image seen by humans cannot be reproduced. Therefore, β having the greatest negative sensitivity, that is, negative red sensitivity is detected by the photoelectric conversion film 50, and the sensitivity to human red is obtained by subtracting this negative sensitivity from the red sensitivity detected by the photoelectric conversion film 31. Can be reproduced.

  In FIG. 2, the process until the insulating film 38 is formed is the same as that of the embodiment of FIG. In this embodiment, a transparent pixel electrode film 49 divided for each pixel for emerald color detection is formed on the insulating film 38. Each pixel electrode film 49 is electrically connected to a high-concentration impurity region 52 for GB color provided on the surface of the semiconductor substrate corresponding to each pixel by a columnar electrode 51. This columnar electrode 52 is electrically insulated from areas other than the pixel electrode film 49 and the high concentration impurity region 52, and the signal charge amount of the high concentration impurity region 52 is a MOS circuit provided adjacent to the region 52. 53.

  On each pixel electrode film 49, a photoelectric conversion film 50 for emerald (GB) color detection is laminated in a single configuration without being divided for each pixel, and a transparent common electrode film 42 is formed thereon. Formed with configuration.

  A blue (B) detection photoelectric conversion film 41 is laminated on the common electrode film 42, and a transparent pixel electrode film 39 divided for each pixel is laminated thereon. Each pixel electrode film 39 is electrically connected to the high concentration impurity region 6 of the corresponding pixel by a columnar electrode 40. This columnar electrode 40 is electrically insulated from areas other than the pixel electrode film 39 and the high concentration impurity region 6. A transparent protective film 43 is formed on the uppermost layer.

  Next, the manufacturing procedure of the vertical wiring (columnar electrodes 32, 37, 40) in the embodiment shown in FIG. 1 will be described in detail with reference to FIG. Each figure (a) is a cross-sectional view of the vertical wiring portion of the semiconductor substrate (the P well layer) 1 and the laminate thereon, and each figure (b) is a top view of the uppermost layer in the manufacturing process. Each drawing (a) corresponds to a cross section taken along line AA of each drawing (b).

  First, as shown in FIG. 4, a semiconductor substrate 1 is prepared. The substrate 1 is already formed with the MOS circuits 3, 5, 7 and the high concentration impurity regions 2, 4, 6 described in FIG. 1, and the light shielding film 10 is laminated on the uppermost layer. Yes.

An insulating film 11 is laminated on the semiconductor substrate 1 as shown in FIG. For example, a SiO ₂ film is laminated by low temperature CVD or the like.

  Next, as shown in FIG. 6, a resist film 60 is laminated, and the resist film 60 is patterned to open columnar electrode holes 61r, 61g, 61b. The subscripts r, g, and b correspond to red (R), green (G), and blue (B). In the example shown in FIG. 6, since columnar electrodes for three pixels are provided, a total of nine holes are provided.

  Next, etching is performed to reach the high-concentration impurity regions 2, 4, 6 described in FIG. 1 in the insulating film 11 at the holes 61 r, 61 g, 61 b of the resist film 60, as shown in FIG. Holes 62r, 62g, and 62b are formed, and then the resist film 60 is removed.

Next, as shown in FIG. 8, a transparent electrode film 63 is laminated, and the holes 62r, 62g, and 62b are filled with an electrode film material to be in electrical contact with the high-concentration impurity regions 2, 4, and 6. As the material of the electrode film, tin oxide (SnO ₂ ), titanium oxide (TiO ₂ ), indium oxide (InO ₂ ), and indium oxide-tin (ITO) thin film are used, but the material is not limited thereto. For example, polysilicon implanted with high-concentration impurities may be used as the columnar electrode or electrode film material. The electrode film is formed by using a conventional film forming technique such as a laser ablation method or a sputtering method.

  Next, a resist film 64 is laminated, and as shown in FIG. 9, the resist film 64 is patterned, and a resist film other than the position of the red pixel electrode film 31 and the positions of the columnar electrodes 32, 37, and 40 is obtained. 64 is removed.

  Next, etching is performed to remove the electrode film 63 other than the portion where the resist film 64 remains. As a result, as shown in FIG. 10, the red pixel electrode film 31 and the lower layer portions of the columnar electrodes 32, 37, and 40 are manufactured.

  Next, for example, the insulating film is stacked after the insulating film is stacked, and the periphery of the red pixel electrode film 31 and the columnar electrodes 32, 37, and 40 is filled with the insulating material 11. Thereafter, as shown in FIG. 11, the columnar electrodes 37 and 40 are formed high. The height is set to reach the green electrode film 36.

  For example, the electrode material such as tin oxide is laminated up to the height, and the resist is used to etch the electrode material while leaving the portions of the columnar electrodes 37 and 40. Alternatively, after forming a thick resist film, holes are formed in the resist film at the positions of the columnar electrodes 37 and 40, and the holes are filled with an electrode material. When the columnar electrodes 37 and 40 are high in height, they may be formed, for example, in two steps and stacked by 1/2 height.

Next, as shown in FIG. 12, the periphery of the protruding columnar electrodes 37 and 40 is covered with an insulating film 65 such as a SiO ₂ film by low temperature CVD or the like.

  Next, as shown in FIG. 13, a photoelectric conversion film 33 for detecting red color is laminated. The lamination method is not particularly limited, and lamination is performed by a sputtering method, a laser ablation method, a printing technique, a spray method, or the like. The material may be an inorganic material or an organic material. In the case of an inorganic material, for example, GaAlAs, Si is used. In the case of an organic material, for example, ZnPc (zinc phthalocyanine) / Alq3 (quinolinol aluminum complex) is used.

  Next, as shown in FIG. 14, a transparent common electrode film 34 such as ITO is laminated, and then, as shown in FIG. 15, a green color detection photoelectric conversion film 35 is laminated. As the material, for example, AnGaAlP or GaPAs is used in the case of an inorganic material, and for example, R6G / PMPS (rhodamine 6G (R6G) -doped polymethylphenylsilane) is used in the case of an organic material.

  Next, as shown in FIG. 16, a resist film 66 is formed on the uppermost layer. A photoelectric conversion film material, an electrode film material, and the like are attached around the pillars 37 and 40 by the steps of FIGS. 13, 14, and 15, and these are dissolved in the resist film 66. Then, etching is performed to remove the insulating film 65 around the columnar electrodes 37 and 40 protruding upward from the resist film 66, and then the resist film 66 is removed (FIG. 17).

  Next, as shown in FIG. 18, a transparent electrode film 67 is laminated. Then, by the same procedure as that for forming the red pixel electrode film, the green pixel electrode film 36 and the columnar electrode 40 are left using the resist film (FIG. 19).

  Next, as shown in FIG. 20, the periphery of the green pixel electrode film 36 is filled with a transparent insulating film 38, and a transparent insulating film 38 is further laminated thereon. Then, as shown in FIG. 21, a hole 38b is formed in the location of the columnar electrode 40 using a resist film. Thereafter, the hole 38b is filled with a transparent electrode film material to elevate the columnar electrode 40, and the electrode film is laminated on one surface.

  Then, as shown in FIG. 22, this electrode film is patterned using a resist to form a blue pixel electrode film 39. Then, as shown in FIG. 23, the blue pixel electrode film 39 is completely filled with a transparent insulating film 38, and a blue detection photoelectric conversion film 41 is laminated on the blue pixel electrode film 39. As the material for the blue color detection photoelectric conversion film 41, for example, InAlP is used for an inorganic material, and for example, C6 / PHPPS (coumarin 6 (C6) -doped poly (m-hexoxyphenyl) phenylsilane) is used for an organic material. ) Is used.

  Finally, as shown in FIG. 24, a transparent common electrode film 42 is laminated, and a protective film 43 is further formed on the uppermost layer, thereby completing the production of the photoelectric conversion film laminated solid-state imaging device.

  The above is the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1, but the photoelectric conversion film stacked solid-state imaging device shown in FIG. 2 can be manufactured in the same manner. In FIG. 4 and subsequent figures, the columnar electrode is provided at a position avoiding the pixel electrode films 31, 36, and 39 for each color, but the columnar electrode is provided so as to penetrate the main body of the pixel electrode film. You may do it.

  In FIG. 25, a photoelectric conversion film for detecting green color is laminated on the upper layer of a semiconductor substrate, and red and blue are detected by a photodiode provided on the surface of the semiconductor substrate as in a conventional image sensor. It is a cross-sectional schematic diagram of a conversion film lamination type solid-state image sensor.

  A p-well layer 81 is formed on the surface portion of the n-type semiconductor substrate 71 of the photoelectric conversion film stacked solid-state imaging device, and an n-region 82 is formed in the red (R) pixel region on the surface portion of the p-well layer 81. Similarly, an n region 84 is formed in the blue (B) pixel region on the surface portion of the p well layer 81, between the p well layer 81 and the n region 82, and between the p well layer 81 and the n region 84. In addition, photodiodes as photoelectric conversion elements are formed, and the generated signal charges are accumulated in the n regions 82 and 84.

  In the illustrated example, an n region 83 is formed on the surface portion of the p well layer 81 between the n region 82 and the n region 84, and this n region 83 serves as a green signal charge storage portion. On the right side of each of the n regions 82, 83, 84, n regions 86 are provided a little apart from each other, and each n region 86 forms a vertical transfer path. A transfer electrode that also serves as a readout electrode 92 reaching each signal storage portion 82, 83, 84 is formed on the surface portion of the n region 86, and a light shielding film 93 is provided on each transfer electrode 92.

A p ⁺ region 94 is provided on the left side surface portion and the surface portion of each of the n regions 82, 83, and 84, so as to be separated from the adjacent vertical transfer path 86 and to reduce the defect level of the surface portion. A silicon oxide film (not shown) is formed on the outermost surface of the semiconductor substrate 71, and the transfer electrode 92 is formed thereon.

  A color filter 95 that transmits red light is provided above the opening position of the light shielding film 93 above the n region 82, and blue light is transmitted above the opening position of the light shielding film 93 above the n region 84. A color filter 96 is provided. The color filters 95 and 96, the light shielding film 93, and the transfer electrode 92 are embedded in a transparent insulating layer 87.

  A transparent pixel electrode film 75 divided for each pixel is formed on the surface of the insulating layer 87, and each pixel electrode film 75 and the n region 83 are connected by a vertical wiring 78. The vertical wiring 78 is electrically insulated from portions other than the corresponding pixel electrode film 75 and the n region 83. A photoelectric conversion film 79 over the entire surface of the semiconductor substrate 71 is laminated on each pixel electrode film 75, and a transparent common electrode film 80 is formed thereon. The photoelectric conversion film 79 that detects green is made of, for example, a quinacridone compound such as 2.9-dimethylquinacridone.

  When light is incident on the photoelectric conversion film stacked solid-state imaging device having such a configuration, light in the green wavelength region of incident light is absorbed by the photoelectric conversion film 79, and photocharge is generated in the photoelectric conversion film 79. The photoelectric charge flows into the n region 83 through the vertical wiring 78 and is held. By applying a bias potential to the common electrode film 80, the flow of photocharge to the n region 83 is promoted.

  Of the incident light, light in the red (R) and blue (B) wavelength regions passes through the photoelectric conversion film 79, and the red light passes through the color filter 95 and enters the n region 82. As a result, signal charges corresponding to the amount of red light are generated and accumulated in the n region 82. Similarly, blue light passes through the color filter 96 and enters the n region 84, and signal charges corresponding to the amount of blue light are accumulated in the n region 84.

  The red, green, and blue signal charges accumulated in the n regions 82, 83, and 84 are read out to the vertical transfer path 86, transferred to the horizontal transfer path (not shown), and then transferred horizontally. The path is transferred and output from the semiconductor substrate 71.

  In the above-described embodiment, the signal readout circuit is configured by a charge transfer path in the same manner as the CCD sensor. However, a signal readout MOS transistor is formed beside each of the n regions 82, 83, 84, and the first, first, Similarly to the second embodiment, a color signal corresponding to the accumulated charge may be read from each of the n regions 82, 83, and 84.

  In the present embodiment, a red signal is detected by the n region 82 (R pixel), a blue signal is detected by the n region 84 (B pixel), and two pixels above the n regions 82 and 83, or the n region. Since the green signal is detected by the area of two pixels above 83 and 84, the sensitivity of green that can be used as a luminance signal is improved.

  26 and 27 are diagrams showing a manufacturing process of the photoelectric conversion film laminated solid-state imaging device shown in FIG. The process up to forming a red detection photodiode or a blue detection photodiode on the surface portion of the semiconductor substrate 71 is the same as the manufacturing process of a conventional CCD or CMOS image sensor. After the formation of the light shielding film 93 shown in FIG. 25, as shown in FIG. 26A, a transparent insulating film 87, for example, a boron phosphorus doped oxide film (BPSG) is formed, and the insulating film is formed by CMP or the like. The surface of 87 is smoothed.

  Then, as shown in FIG. 26B, a hole 72 penetrating to the n region 83 is opened in the insulating film 87 by etching. Next, as shown in FIG. Tungsten (W) 73 is formed on the insulating film 87.

  Next, as shown in FIG. 26D, the unnecessary tungsten layer 73 is shaved by photolithography and etching so that the tungsten vertical wiring 78 remains, and this time, as shown in FIG. A B color filter 96 and an R color filter 95 (not shown in FIGS. 26 and 27) are formed on 87.

  Next, as shown in FIG. 27A, a transparent insulating film 87 is further laminated until the color filters 96 and 95 are embedded in the insulating film 87, and the surface of the insulating film 87 is smoothed by CMP or the like. At this time, smoothing is performed until the metal surface of the front end surface of the vertical wiring 78 is exposed.

  Next, as shown in FIG. 27B, a transparent metal film such as ITO is formed, and the metal film is divided into pixels by photolithography and etching to form a pixel electrode film 75.

  Next, a photoelectric conversion film 79 is formed on the pixel electrode film 75 as shown in FIG. 27C, and a common electrode film 80 is formed on the photoelectric conversion film 79 as shown in FIG. Is formed. By forming the vertical wiring 78 through the above steps, the pixel electrode film 75 can be connected to the n region 83 without disconnection.

  According to each embodiment described above, when the vertical wiring is formed first, and then the vertical wiring hole is drilled after the photoelectric conversion film is formed in order to form the layer structure in which the vertical wiring is embedded. There is no risk of the photoelectric conversion film material flowing into the holes, and the manufacture becomes easy.

  By using the columnar electrode manufacturing method according to the present invention, it becomes possible to manufacture a photoelectric conversion film laminated solid-state imaging device at a low cost and a high manufacturing yield. Therefore, instead of a conventional CCD type or CMOS type image sensor. It is possible to use a photoelectric conversion film stacked solid-state imaging device.

It is a cross-sectional schematic diagram for 2 pixels of the photoelectric conversion film laminated | stacked solid-state image sensor of the 3 layer structure which concerns on the 1st Embodiment of this invention. It is a cross-sectional schematic diagram for 2 pixels of the photoelectric conversion film laminated | stacked solid-state image sensor of the 4 layer structure which concerns on the 2nd Embodiment of this invention. It is a graph which shows human visibility. It is explanatory drawing of the manufacture procedure of the photoelectric converting film laminated | stacked solid-state image sensor shown in FIG. FIG. 5 is an explanatory diagram of a procedure next to FIG. 4 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 6 is an explanatory diagram of a procedure next to FIG. 5 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 7 is an explanatory diagram of a procedure next to FIG. 6 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 8 is an explanatory diagram of a procedure next to FIG. 7 in the manufacturing procedure of the photoelectric conversion film laminated solid-state imaging device shown in FIG. 1. FIG. 9 is an explanatory diagram of a procedure next to FIG. 8 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 10 is an explanatory diagram of a procedure next to FIG. 9 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 11 is an explanatory diagram of a procedure next to FIG. 10 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 12 is an explanatory diagram of a procedure next to FIG. 11 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 13 is an explanatory diagram of a procedure next to FIG. 12 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 14 is an explanatory diagram of a procedure next to FIG. 13 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 15 is an explanatory diagram of a procedure next to FIG. 14 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 16 is an explanatory diagram of a procedure next to FIG. 15 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 17 is an explanatory diagram of a procedure next to FIG. 16 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 18 is an explanatory diagram of a procedure next to FIG. 17 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 19 is an explanatory diagram of a procedure next to FIG. 18 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 20 is an explanatory diagram of a procedure next to FIG. 19 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 21 is an explanatory diagram of a procedure next to FIG. 20 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 22 is an explanatory diagram of a procedure next to FIG. 21 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 23 is an explanatory diagram of a procedure next to FIG. 22 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. FIG. 24 is an explanatory diagram of a procedure next to FIG. 23 in the manufacturing procedure of the photoelectric conversion film stacked solid-state imaging device shown in FIG. 1. It is a principal part cross-sectional schematic diagram of the photoelectric conversion film laminated | stacked solid-state image sensor which concerns on the 3rd Embodiment of this invention. It is a figure which shows the manufacturing process of the photoelectric converting film laminated | stacked solid-state image sensor shown in FIG. It is a figure which shows the manufacturing process of the photoelectric converting film laminated | stacked solid-state image sensor shown in FIG.

Explanation of symbols

1,81 P well layer (semiconductor substrate)
2, 4, 6, 52 High-concentration impurity regions 3, 5, 7, 53 MOS circuit 8 Gate insulating films 9, 11, 38, 87 Insulating films 31, 36, 39, 75 Pixel electrode films 32, 37, 40, 78 Vertical wiring 34, 42, 80 Common electrode film 33, 35, 41, 50, 79 Photoelectric conversion film 43 Protective film 82, 83, 84 n region

Claims (5)

  In a method of manufacturing a photoelectric conversion film stacked solid-state imaging device in which a photoelectric conversion film sandwiched between a common electrode film and a pixel electrode film corresponding to a pixel is stacked on a semiconductor substrate, the photoelectric conversion film is formed on a surface portion of the semiconductor substrate. A vertical wiring that reaches the position of the corresponding pixel electrode film and is connected to the corresponding signal readout circuit, and then a layer structure in which the vertical wiring is embedded is formed, and then the surface of the layer is formed. A method of manufacturing a photoelectric conversion film stack type solid-state imaging device, comprising forming the pixel electrode film to which the tip is connected.   The photoelectric conversion film is a photoelectric conversion film for detecting the amount of green incident light, and the constituents of the layer are formed on each of the red detection photodiode and the blue detection photodiode provided on the surface portion of the semiconductor substrate. 2. The photoelectric conversion film stacked solid-state imaging device according to claim 1, which is a color filter for transmitting red light and blue light and an insulating layer in which the color filter is embedded.   In a method of manufacturing a photoelectric conversion film stack type solid-state imaging device in which a plurality of photoelectric conversion films sandwiched between a common electrode film and a pixel electrode film corresponding to a pixel are stacked on a semiconductor substrate via an insulating film, A vertical wiring connected to a signal readout circuit formed on the surface, the lower photoelectric conversion film, the common electrode film sandwiching the photoelectric conversion film, and the upper photoelectric conversion film through the insulating film The vertical wiring connected to the sandwiched pixel electrode film is first manufactured and covered with an insulating material, and then the lower layer photoelectric conversion film, the common electrode film sandwiching the photoelectric conversion film, and the insulating film are stacked. A method of manufacturing a photoelectric conversion film stack type solid-state imaging device.   Three photoelectric conversion films for red detection, green detection, and blue detection are provided in order from the top in the shortest detection wavelength, and the common electrode film provided on two photoelectric conversion films among the three photoelectric conversion films is shared. The manufacturing method of the photoelectric conversion film laminated | stacked solid-state image sensor of Claim 3 characterized by these.   The four photoelectric conversion films for red color detection, green color detection, blue color detection, and emerald color detection are provided from the top in the order of the shortest detection wavelength, and are provided on two adjacent photoelectric conversion films among the four photoelectric conversion films. The method for manufacturing a photoelectric conversion film stacked solid-state imaging device according to claim 3, wherein the common electrode film is shared.

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