JP2005302864A - High frequency package mounted board - Google Patents

High frequency package mounted board Download PDF

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Publication number
JP2005302864A
JP2005302864A JP2004114034A JP2004114034A JP2005302864A JP 2005302864 A JP2005302864 A JP 2005302864A JP 2004114034 A JP2004114034 A JP 2004114034A JP 2004114034 A JP2004114034 A JP 2004114034A JP 2005302864 A JP2005302864 A JP 2005302864A
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thin film
substrate
metal plate
film substrate
high frequency
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JP2004114034A
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JP4479317B2 (en
Inventor
Hiroyasu Omori
寛康 大森
Kenshiro Ikeda
剣志郎 池田
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Toppan Inc
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Toppan Printing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a high frequency package mounted board which decreases various electric influences caused by a metal plate connected to a thin film substrate and also improves a transmission characteristic. <P>SOLUTION: A substrate for a high frequency package is a thin film substrate and the metal plate is provided on the lower face of the thin film substrate for preventing the warp of the thin film substrate and facilitating mounting. The metal plate is connected to the ground of the thin film substrate and also connected to the ground of the substrate for mounting the thin film substrate. A solder resist is used for connection between the metal plate and the thin film substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、高周波伝送に優れたICパッケージの実装済基板に関するものである。   The present invention relates to a mounted substrate of an IC package excellent in high frequency transmission.

従来より、高周波パッケージ用薄膜基板に付ける金属板は、基板の反りを防止し実装を容易にするために設け、薄膜基板の上面に、ICチップを実装する場所をくりぬいた形で貼り付けている。薄膜基板である為、高周波伝送になるほど薄膜基板内の線路と薄膜基板の上面に配置された金属板が電気的に結合する。この結合により、薄膜基板内を伝送する高周波パスルに歪みが生じる。また、高周波パルスの歪みだけでなく、電気的結合により金属板からの電磁放射も起こる。   Conventionally, a metal plate to be attached to a thin film substrate for a high frequency package has been provided in order to prevent the substrate from warping and facilitate mounting, and has been attached to the upper surface of the thin film substrate in a shape where the IC chip is mounted. . Since it is a thin film substrate, the line in the thin film substrate and the metal plate arranged on the upper surface of the thin film substrate are electrically coupled to each other as the frequency becomes higher. This coupling causes distortion in the high frequency pulse transmitted through the thin film substrate. In addition to high-frequency pulse distortion, electromagnetic radiation from the metal plate also occurs due to electrical coupling.

また、例え薄膜基板内で歪み無く伝送された高周波パルスも薄膜基板を異なる基板に実装する接続部では、伝送形態が崩れる為に非常に大きな歪みを生じる。このように、薄膜基板に接続する金属板によって、様々な電気的影響が伝送特性に現われる。   In addition, a high-frequency pulse transmitted without distortion in the thin film substrate also causes a very large distortion at the connection portion where the thin film substrate is mounted on a different substrate because the transmission form is lost. Thus, various electrical influences appear in the transmission characteristics depending on the metal plate connected to the thin film substrate.

以下に公知文献を示す。
特開2003−152124号公報
The known literature is shown below.
JP 2003-152124 A

本願発明は、このような、薄膜基板に接続する金属板による様々な電気的影響を減らし、更に伝送特性を上げた高周波パッケージ実装済基板を提供する。   The present invention provides a high-frequency package mounted substrate that reduces various electrical effects due to the metal plate connected to the thin film substrate and further improves the transmission characteristics.

本発明は、係る課題に鑑みなされたものであり、請求項1に記載の発明は、高周波パッケージ用サブストレートが薄膜基板であり、その薄膜基板の反りを防ぎ実装を容易にする為の金属板を薄膜基板の下面に設け、その金属板は、薄膜基板のグランドに接続され、更に薄膜基板を実装する基板のグランドにも接続された事を特徴とする高周波パッケージ実装済基板としたものである。   SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and the invention according to claim 1 is a metal plate for facilitating mounting by preventing the warp of the thin film substrate and the substrate for the high frequency package being a thin film substrate. Is provided on the lower surface of the thin film substrate, and the metal plate is connected to the ground of the thin film substrate, and is further connected to the ground of the substrate on which the thin film substrate is mounted. .

ここで、金属板及び実装基板をグランドに接続することにより、金属板周辺の信号部分がノイズなどの外部信号が遮断され、様々な電気的影響を減らし伝達特性を向上できる。   Here, by connecting the metal plate and the mounting substrate to the ground, an external signal such as noise is cut off in the signal portion around the metal plate, and various electrical influences can be reduced and transmission characteristics can be improved.

本発明の請求項2の発明は、金属板と薄膜基板の接続が、ソルダーレジストを用いたことを特徴とする請求項1に記載の高周波パッケージ実装済基板としたものである。   The invention according to claim 2 of the present invention is the substrate mounted with the high-frequency package according to claim 1, wherein a solder resist is used for connection between the metal plate and the thin film substrate.

ここで、比誘電率、誘電損失の少ないソルダーレジストで接続することにより、更に良好な高周波伝送が可能となる。ソルダーレジストとしてはエポキシ樹脂など公知の樹脂を用いることができる。   Here, by connecting with a solder resist having a low relative dielectric constant and low dielectric loss, it is possible to achieve better radio frequency transmission. A known resin such as an epoxy resin can be used as the solder resist.

本発明の請求項3の発明は、信号の接続部と金属板とが特性インピーダンスマッチングした事を特徴とする請求項1または2記載の高周波パッケージ実装済基板としたものである。   According to a third aspect of the present invention, there is provided the high frequency package mounted substrate according to the first or second aspect, wherein the signal connection portion and the metal plate are characteristic impedance matched.

ここで、信号の接続部と金属板とが特性インピーダンスマッチングした事により、確実に伝送特性を良好にでき、反射の少ない信号の伝達ができる。   Here, the characteristic impedance matching between the signal connection portion and the metal plate ensures reliable transmission characteristics and enables transmission of a signal with less reflection.

以上、本発明によれば、金属板をGND接続する事によって、伝送特性に悪影響を与える金属板に伝送特性に良好な効果を与える事ができる。   As described above, according to the present invention, by connecting the metal plates to the GND, it is possible to give a favorable effect on the transmission characteristics to the metal plates that adversely affect the transmission characteristics.

図1は、本発明の高周波パッケージ実装済基板の実施の形態例を断面で示した説明図である。薄膜基板2の片面(下側の面)に実装基板5と接続されるシグナルピンを中抜きされた金属板3が設けられ、他の片面には半だボールによりICチップ1が接続されている。薄膜基板2内の線路を通じ、ICチップ1とシグナルピンとが接続されている。また薄膜基板2は半だボールにより信号線や電源、GNDが実装基板5に接続されている。   FIG. 1 is an explanatory view showing a cross-section of an embodiment of a substrate mounted with a high-frequency package according to the present invention. A metal plate 3 in which signal pins connected to the mounting substrate 5 are hollowed out is provided on one surface (lower surface) of the thin film substrate 2, and the IC chip 1 is connected to the other surface by a half ball. . The IC chip 1 and the signal pin are connected through a line in the thin film substrate 2. The thin film substrate 2 is connected to the mounting substrate 5 with a signal line, a power source, and GND by a half ball.

図2は、シグナルピンを、図3は、グランドピンを拡大した図である。ここでは、半田ボールでの接続を例に取っているが、ピン等の他の接続方法も可能である。本発明では、薄型基板の下面に金属板3が接着剤6により付いている。この接着剤6は、ソルダーレジストの代わりとなっている。この金属板3は、基板5とサブストレート(薄膜基板)を実装する接続部のみ穴があいている。   2 is an enlarged view of signal pins, and FIG. 3 is an enlarged view of ground pins. Here, the connection with solder balls is taken as an example, but other connection methods such as pins are also possible. In the present invention, the metal plate 3 is attached to the lower surface of the thin substrate with the adhesive 6. The adhesive 6 serves as a solder resist. The metal plate 3 has a hole only in the connecting portion for mounting the substrate 5 and the substrate (thin film substrate).

図2のようにシグナルピンと金属板3はある距離を持って離れている。これは、この接続部での特性インピーダンスを線路の特性インピーダンスに合わせるためである。例えば、特性インピーダンスを50[Ω]に合わせるとするなら、図2のような半田ボールの場合、直径が0.5[mm]であれば、ボールと金属板の間が空気とすると、ボールと金属板の距離は、0.325[mm]となる。ボールと金属板の間にε=4.2の物質が充填されているとすると、その距離は、1.13[mm]となる。図3は、グランドピンは、金属板と接続するような配置となる。   As shown in FIG. 2, the signal pin and the metal plate 3 are separated by a certain distance. This is because the characteristic impedance at the connection portion is matched with the characteristic impedance of the line. For example, if the characteristic impedance is adjusted to 50 [Ω], in the case of a solder ball as shown in FIG. 2, if the diameter is 0.5 [mm], and the air between the ball and the metal plate is air, the ball and the metal plate The distance is 0.325 [mm]. If a material of ε = 4.2 is filled between the ball and the metal plate, the distance is 1.13 [mm]. In FIG. 3, the ground pins are arranged so as to be connected to the metal plate.

本願の高周波パッケージ実装済基板の製造方法の例を以下に示す。   An example of the manufacturing method of the high frequency package mounted substrate of the present application is shown below.

まず、BGA用の基板に、チップ実装面とは反対面にパッドをパターニングして形成する。   First, a pad is patterned on the surface opposite to the chip mounting surface on a BGA substrate.

次に、その上にソルダーレジストを塗布し、パッド上のピン接続部のソルダーレジストを除去するパターニングを行う。   Next, a solder resist is applied thereon, and patterning is performed to remove the solder resist at the pin connection portion on the pad.

次に、チップを実装し、BGA基板を作成する。   Next, a chip is mounted and a BGA substrate is created.

次に、シグナルピンおよびGNDピンの位置に相当する部分に穴を開けた金属板を用意する。シグナルピンが、金属板と接触しショートするのを避けるため、シグナルピンの配置場所に、金属板開けた穴の側面を、予め薄膜の絶縁物を設けたほうが好ましい。   Next, a metal plate having holes in portions corresponding to the positions of the signal pins and the GND pins is prepared. In order to prevent the signal pin from coming into contact with the metal plate and short-circuiting, it is preferable to provide a thin film insulator in advance on the side surface of the hole formed in the metal plate at the location of the signal pin.

次に、金属板を上記パターニングしたBGA基板の面上に、パッドと穴の中心位置が一致する様に貼りつける。   Next, a metal plate is affixed on the surface of the patterned BGA substrate so that the center positions of the pads and holes coincide.

次に、穴にボールを入れる。   Next, put the ball into the hole.

次に、上記BGA基板に実装するPCB基板の面に、ピンに相当する部分にパッドをパターニングして形成する。   Next, pads are formed on the surface of the PCB substrate to be mounted on the BGA substrate by patterning portions corresponding to the pins.

次に、PCB基板の面にソルダーレジストを塗布し、パッド上のピン接続部のソルダーレジストを除去するパターニングを行う。   Next, a solder resist is applied to the surface of the PCB substrate, and patterning is performed to remove the solder resist at the pin connection portion on the pad.

次に、PCB基板を、パッドがボールに接続する様に前期のボールを入れたBGA基板に貼りつける。   Next, the PCB substrate is affixed to the BGA substrate containing the previous balls so that the pads are connected to the balls.

薄膜基板に金属板を接着させる際、薄膜基板のGNDピンと金属基板は接続される。また、薄膜基板のシグナルピンと金属基板の間隙は、特性インピーダンス50[Ω]となるような間隙とする。ここでは、パット径:0.6[mm]、バンプ径:0.5[mm]とし、間隙を0.325[mm]とした。その後、薄膜基板を実装する。この時の電気特性を測定した結果が図4である。比較した一般的な金属板の配置の構造は、本発明の例と同様に、パット径:0.6[mm]、バンプ径:0.5[mm]とし、ボールと金属板の距離は0.325[mm]とした。図4は、S-Parameter表記のS11である。S11は、反射係数を表している。値が小さくなるほど、反射の割合が小さい事を表している。一般的な金属板の配置に比べると、本発明の配置の方が反射係数の低い帯域が広い事がわかる。この事より、本発明は、高周波領域において良好な特性を得ることができると言える。   When the metal plate is bonded to the thin film substrate, the GND pin of the thin film substrate and the metal substrate are connected. In addition, the gap between the signal pin of the thin film substrate and the metal substrate is set to have a characteristic impedance of 50 [Ω]. Here, the pad diameter was 0.6 [mm], the bump diameter was 0.5 [mm], and the gap was 0.325 [mm]. Thereafter, a thin film substrate is mounted. The result of measuring the electrical characteristics at this time is shown in FIG. The structure of the arrangement of the general metal plates compared is, as in the example of the present invention, the pad diameter: 0.6 [mm], the bump diameter: 0.5 [mm], and the distance between the ball and the metal plate is 0. 325 [mm]. FIG. 4 shows S11 in S-Parameter notation. S11 represents a reflection coefficient. The smaller the value, the smaller the percentage of reflection. It can be seen that the band of the reflection coefficient is wider in the arrangement of the present invention than in the arrangement of the general metal plate. From this, it can be said that the present invention can obtain good characteristics in the high frequency region.

本発明の高周波パッケージ実装済基板の実施例を断面で示した説明図である。It is explanatory drawing which showed the Example of the high frequency package mounting board | substrate of this invention in the cross section. 本発明の高周波パッケージ実装済基板の実施例のシグナルピンを拡大して断面で示した説明図である。It is explanatory drawing which expanded and showed the signal pin of the Example of the high frequency package mounting board | substrate of this invention in the cross section. 本発明の高周波パッケージ実装済基板の実施例のグランドピンを拡大して断面で示した説明図である。It is explanatory drawing which expanded and showed the ground pin of the Example of the high frequency package mounting board | substrate of this invention in the cross section. 本発明の高周波パッケージ実装済基板の実施例の特性図である。It is a characteristic view of the Example of the high frequency package mounting board | substrate of this invention.

符号の説明Explanation of symbols

1:ICチップ
2:薄膜基板
3:金属板
4:実装部分
5:実装基板
6:接着剤
1: IC chip 2: Thin film substrate 3: Metal plate 4: Mounting portion 5: Mounting substrate 6: Adhesive

Claims (3)

高周波パッケージ用サブストレートが薄膜基板であり、その薄膜基板の反りを防ぎ実装を容易にする為の金属板を薄膜基板の下面に設け、その金属板は、薄膜基板のグランドに接続され、更に薄膜基板を実装する基板のグランドにも接続された事を特徴とする高周波パッケージ実装済基板。   The substrate for the high-frequency package is a thin film substrate, and a metal plate is provided on the lower surface of the thin film substrate to prevent warpage of the thin film substrate, and the metal plate is connected to the ground of the thin film substrate. A high-frequency packaged board that is also connected to the ground of the board on which the board is mounted. 金属板と薄膜基板の接続が、ソルダーレジストを用いたことを特徴とする請求項1に記載の高周波パッケージ実装済基板。   The high frequency package mounted substrate according to claim 1, wherein a solder resist is used for connection between the metal plate and the thin film substrate. 信号の接続部と金属板とが特性インピーダンスマッチングした事を特徴とする請求項1または2記載の高周波パッケージ実装済基板。   The high frequency package mounted substrate according to claim 1 or 2, wherein the signal connection portion and the metal plate are characteristic impedance matched.
JP2004114034A 2004-04-08 2004-04-08 High frequency package mounted substrate Expired - Fee Related JP4479317B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013080560A1 (en) * 2011-12-02 2013-06-06 パナソニック株式会社 Wireless module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013080560A1 (en) * 2011-12-02 2013-06-06 パナソニック株式会社 Wireless module
JPWO2013080560A1 (en) * 2011-12-02 2015-04-27 パナソニックIpマネジメント株式会社 Wireless module

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