JP2005294306A5 - - Google Patents

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Publication number
JP2005294306A5
JP2005294306A5 JP2004102920A JP2004102920A JP2005294306A5 JP 2005294306 A5 JP2005294306 A5 JP 2005294306A5 JP 2004102920 A JP2004102920 A JP 2004102920A JP 2004102920 A JP2004102920 A JP 2004102920A JP 2005294306 A5 JP2005294306 A5 JP 2005294306A5
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JP
Japan
Prior art keywords
nitride semiconductor
semiconductor layer
layer
type
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004102920A
Other languages
English (en)
Japanese (ja)
Other versions
JP4955195B2 (ja
JP2005294306A (ja
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Publication date
Application filed filed Critical
Priority to JP2004102920A priority Critical patent/JP4955195B2/ja
Priority claimed from JP2004102920A external-priority patent/JP4955195B2/ja
Publication of JP2005294306A publication Critical patent/JP2005294306A/ja
Publication of JP2005294306A5 publication Critical patent/JP2005294306A5/ja
Application granted granted Critical
Publication of JP4955195B2 publication Critical patent/JP4955195B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004102920A 2004-03-31 2004-03-31 窒化物半導体素子 Expired - Fee Related JP4955195B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004102920A JP4955195B2 (ja) 2004-03-31 2004-03-31 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004102920A JP4955195B2 (ja) 2004-03-31 2004-03-31 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2005294306A JP2005294306A (ja) 2005-10-20
JP2005294306A5 true JP2005294306A5 (cg-RX-API-DMAC7.html) 2007-05-24
JP4955195B2 JP4955195B2 (ja) 2012-06-20

Family

ID=35326947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004102920A Expired - Fee Related JP4955195B2 (ja) 2004-03-31 2004-03-31 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4955195B2 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318874B2 (en) * 2009-06-03 2016-04-19 Nichia Corporation Semiconductor device and method of manufacturing semiconductor device
JP5803167B2 (ja) * 2011-03-14 2015-11-04 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
JP7147560B2 (ja) * 2016-07-04 2022-10-05 ソニーグループ株式会社 スーパールミネッセンスダイオード及び表示装置
TWI672226B (zh) * 2017-06-01 2019-09-21 美商因特瓦克公司 具有奈米積層以提高耐用性的光學塗層
CN112350148B (zh) * 2019-08-08 2023-06-13 朗美通日本株式会社 半导体光学元件和包括该元件的半导体光学装置
JP7607286B2 (ja) * 2021-09-10 2024-12-27 ウシオ電機株式会社 窒化物半導体発光素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08195529A (ja) * 1995-01-17 1996-07-30 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザエピタキシャル結晶積層体および半導体レーザ
JP3443241B2 (ja) * 1996-06-28 2003-09-02 三洋電機株式会社 半導体レーザ素子
JPH11153814A (ja) * 1997-09-17 1999-06-08 Matsushita Electric Ind Co Ltd 液晶表示素子
JP4422806B2 (ja) * 1998-02-18 2010-02-24 三菱電機株式会社 半導体レーザ
JP2003086898A (ja) * 2001-09-07 2003-03-20 Nec Corp 窒化ガリウム系半導体レーザ
JP2004014818A (ja) * 2002-06-07 2004-01-15 Fuji Photo Film Co Ltd 半導体レーザ素子

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