JP2005294306A5 - - Google Patents
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- Publication number
- JP2005294306A5 JP2005294306A5 JP2004102920A JP2004102920A JP2005294306A5 JP 2005294306 A5 JP2005294306 A5 JP 2005294306A5 JP 2004102920 A JP2004102920 A JP 2004102920A JP 2004102920 A JP2004102920 A JP 2004102920A JP 2005294306 A5 JP2005294306 A5 JP 2005294306A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- layer
- type
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 48
- 150000004767 nitrides Chemical class 0.000 claims 46
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004102920A JP4955195B2 (ja) | 2004-03-31 | 2004-03-31 | 窒化物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004102920A JP4955195B2 (ja) | 2004-03-31 | 2004-03-31 | 窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005294306A JP2005294306A (ja) | 2005-10-20 |
| JP2005294306A5 true JP2005294306A5 (OSRAM) | 2007-05-24 |
| JP4955195B2 JP4955195B2 (ja) | 2012-06-20 |
Family
ID=35326947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004102920A Expired - Fee Related JP4955195B2 (ja) | 2004-03-31 | 2004-03-31 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4955195B2 (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9318874B2 (en) * | 2009-06-03 | 2016-04-19 | Nichia Corporation | Semiconductor device and method of manufacturing semiconductor device |
| JP5803167B2 (ja) * | 2011-03-14 | 2015-11-04 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子の製造方法 |
| DE112017003372T5 (de) * | 2016-07-04 | 2019-03-14 | Sony Corporation | Optisches element, aktive schichtstruktur und anzeigevorrichtung |
| TWI672226B (zh) * | 2017-06-01 | 2019-09-21 | 美商因特瓦克公司 | 具有奈米積層以提高耐用性的光學塗層 |
| CN112350148B (zh) * | 2019-08-08 | 2023-06-13 | 朗美通日本株式会社 | 半导体光学元件和包括该元件的半导体光学装置 |
| JP7607286B2 (ja) * | 2021-09-10 | 2024-12-27 | ウシオ電機株式会社 | 窒化物半導体発光素子 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08195529A (ja) * | 1995-01-17 | 1996-07-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザエピタキシャル結晶積層体および半導体レーザ |
| JP3443241B2 (ja) * | 1996-06-28 | 2003-09-02 | 三洋電機株式会社 | 半導体レーザ素子 |
| JPH11153814A (ja) * | 1997-09-17 | 1999-06-08 | Matsushita Electric Ind Co Ltd | 液晶表示素子 |
| JP4422806B2 (ja) * | 1998-02-18 | 2010-02-24 | 三菱電機株式会社 | 半導体レーザ |
| JP2003086898A (ja) * | 2001-09-07 | 2003-03-20 | Nec Corp | 窒化ガリウム系半導体レーザ |
| JP2004014818A (ja) * | 2002-06-07 | 2004-01-15 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
-
2004
- 2004-03-31 JP JP2004102920A patent/JP4955195B2/ja not_active Expired - Fee Related