JP2005286034A - 撮像素子 - Google Patents
撮像素子 Download PDFInfo
- Publication number
- JP2005286034A JP2005286034A JP2004096650A JP2004096650A JP2005286034A JP 2005286034 A JP2005286034 A JP 2005286034A JP 2004096650 A JP2004096650 A JP 2004096650A JP 2004096650 A JP2004096650 A JP 2004096650A JP 2005286034 A JP2005286034 A JP 2005286034A
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- JP
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- light
- layer
- refractive index
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- incident
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003384 imaging method Methods 0.000 title claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims description 39
- 230000000737 periodic effect Effects 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 4
- 230000004907 flux Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 139
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 34
- 230000003287 optical effect Effects 0.000 description 28
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- 239000011229 interlayer Substances 0.000 description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 238000000926 separation method Methods 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 239000011295 pitch Substances 0.000 description 15
- 230000004044 response Effects 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 7
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Landscapes
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】入射した光を光電変換する光電変換部31を備える受光素子を複数配列した撮像素子3であって、撮像素子に入射する光線を拡散させる微細周期構造部40と、受光素子の内部に形成され、微細周期構造部を通過して拡散された光を反射して、光電変換部に導く反射部64とを具備する。
【選択図】 図1
Description
ここで、u:光学像の空間周波数
ω:物体像分離幅
R2(u):レスポンス
複屈折板の厚さを適当に選択すれば、撮像素子のナイキスト周波数においてレスポンスをゼロとすることが可能である。
図1から図11は本発明による第1の実施の形態を説明するための図である。
ここで、t:回折光分離層の厚さ
n:回折光分離層の屈折率
λ:光の波長
P:回折格子のピッチ
である。
t=2.7μm
n=1.3
λ=0.55μm
P=0.99μm
あるいは、
δ=3.6μm
t=9.1μm
n=1.3
λ=0.55μm
P=1.8μm
などは(2)式を満足する組み合わせである。図4や図7に示した撮像素子3の断面図は、後者の寸法で示してある。
δ=L/√2 …(3)
とすると、実質的な受光開口52は図10に示す如く拡大し、受光開口52の大きさMは、
M=2×L …(4)
となる。
un=1/(2L) ・・・(5)
であり、他方、矩形開口受光素子のレスポンスは次のSINC関数で表すことができる。
u:物体像の空間周波数
R3(u):レスポンス
M :撮像素子の受光開口の幅
式(6)の最初のゼロ点(カットオフ周波数)ucは、
uc=1/M=1/(2L) ・・・(7)
の位置である。
導波路は他の物質の組み合わせによっても構成可能である。また、本発明による撮像素子をカラー撮像素子に適用すれば、偽色を抑制することができる。
導波路はさらに別の物質の組み合わせによっても構成可能である。また、撮像素子内の低屈折率層を利用して層内レンズを形成することができる。
36 透明樹脂層
64 界面
31 光電変換部
40 回折格子
Claims (3)
- 入射した光を光電変換する光電変換部を備える受光素子を複数配列した撮像素子であって、
前記撮像素子に入射する光線を拡散させる微細周期構造部と、
前記受光素子の内部に形成され、該微細周期構造部を通過して拡散された光を反射して、前記光電変換部に導く反射部と、
を具備することを特徴とする撮像素子。 - 前記受光素子の各々からは、互いに異なる複数の分光特性で入射光を光電変換した光電変換出力を取り出せることを特徴とする請求項1に記載の撮像素子。
- 前記反射部は、前記受光素子の内部に形成された屈折率が高い高屈折率部と、該高屈折率部の周囲に形成された該高屈折率部よりも屈折率が低い低屈折率部とを備え、前記高屈折率部内に入射した光を、前記高屈折率部と前記低屈折率部の界面で全反射させることを特徴とする請求項1に記載の撮像素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004096650A JP5013660B2 (ja) | 2004-03-29 | 2004-03-29 | 撮像素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004096650A JP5013660B2 (ja) | 2004-03-29 | 2004-03-29 | 撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005286034A true JP2005286034A (ja) | 2005-10-13 |
JP5013660B2 JP5013660B2 (ja) | 2012-08-29 |
Family
ID=35184092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004096650A Expired - Fee Related JP5013660B2 (ja) | 2004-03-29 | 2004-03-29 | 撮像素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5013660B2 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019627A (ja) * | 2004-07-05 | 2006-01-19 | Dainippon Printing Co Ltd | 固体撮像素子 |
JP2006229116A (ja) * | 2005-02-21 | 2006-08-31 | Sony Corp | 固体撮像素子 |
JP2008283070A (ja) * | 2007-05-11 | 2008-11-20 | Canon Inc | 撮像素子 |
CN101546778A (zh) * | 2008-03-26 | 2009-09-30 | 索尼株式会社 | 固体摄像元件及其制造方法、电子设备及其制造方法 |
WO2010016195A1 (ja) * | 2008-08-05 | 2010-02-11 | パナソニック株式会社 | 撮像用光検出装置 |
US7666704B2 (en) | 2005-04-22 | 2010-02-23 | Panasonic Corporation | Solid-state image pickup element, method for manufacturing such solid-state image pickup element and optical waveguide forming device |
JP2010141358A (ja) * | 2010-03-15 | 2010-06-24 | Sony Corp | 固体撮像素子 |
JP2010206009A (ja) * | 2009-03-04 | 2010-09-16 | Toshiba Corp | 撮像装置及びその製造方法、並びに撮像方法 |
US8878115B2 (en) | 2011-02-09 | 2014-11-04 | Canon Kabushiki Kaisha | Photoelectric conversion element, and photoelectric conversion apparatus and imaging system having a light guide |
JPWO2013031100A1 (ja) * | 2011-09-02 | 2015-03-23 | パナソニック株式会社 | 偏光撮像素子および内視鏡 |
JPWO2013061489A1 (ja) * | 2011-10-24 | 2015-04-02 | パナソニックIpマネジメント株式会社 | カラー撮像装置 |
WO2023182202A1 (ja) * | 2022-03-22 | 2023-09-28 | 凸版印刷株式会社 | 固体撮像素子およびその製造方法 |
WO2023218842A1 (ja) * | 2022-05-10 | 2023-11-16 | 凸版印刷株式会社 | マイクロレンズアレイおよび固体撮像素子 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139300A (ja) * | 1994-11-10 | 1996-05-31 | Olympus Optical Co Ltd | 固体撮像装置 |
JPH08211336A (ja) * | 1995-02-08 | 1996-08-20 | Matsushita Electric Ind Co Ltd | 光学的ローパスフィルタ付き固体撮像素子 |
JP2000066141A (ja) * | 1998-08-20 | 2000-03-03 | Kureha Chem Ind Co Ltd | 光学的ローパスフィルター、光学的ローパス補正方法、ccd固体撮像素子、カラー撮像装置およびカメラ |
JP2003304545A (ja) * | 2002-04-10 | 2003-10-24 | Canon Inc | 撮像装置 |
-
2004
- 2004-03-29 JP JP2004096650A patent/JP5013660B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139300A (ja) * | 1994-11-10 | 1996-05-31 | Olympus Optical Co Ltd | 固体撮像装置 |
JPH08211336A (ja) * | 1995-02-08 | 1996-08-20 | Matsushita Electric Ind Co Ltd | 光学的ローパスフィルタ付き固体撮像素子 |
JP2000066141A (ja) * | 1998-08-20 | 2000-03-03 | Kureha Chem Ind Co Ltd | 光学的ローパスフィルター、光学的ローパス補正方法、ccd固体撮像素子、カラー撮像装置およびカメラ |
JP2003304545A (ja) * | 2002-04-10 | 2003-10-24 | Canon Inc | 撮像装置 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019627A (ja) * | 2004-07-05 | 2006-01-19 | Dainippon Printing Co Ltd | 固体撮像素子 |
JP2006229116A (ja) * | 2005-02-21 | 2006-08-31 | Sony Corp | 固体撮像素子 |
US7666704B2 (en) | 2005-04-22 | 2010-02-23 | Panasonic Corporation | Solid-state image pickup element, method for manufacturing such solid-state image pickup element and optical waveguide forming device |
JP2008283070A (ja) * | 2007-05-11 | 2008-11-20 | Canon Inc | 撮像素子 |
US7791011B2 (en) | 2008-03-26 | 2010-09-07 | Sony Corporation | Solid-state imaging device and manufacturing method thereof and electronic apparatus and manufacturing method thereof |
CN101546778A (zh) * | 2008-03-26 | 2009-09-30 | 索尼株式会社 | 固体摄像元件及其制造方法、电子设备及其制造方法 |
JP2009238942A (ja) * | 2008-03-26 | 2009-10-15 | Sony Corp | 固体撮像素子及びその製造方法 |
CN101546778B (zh) * | 2008-03-26 | 2014-08-20 | 索尼株式会社 | 固体摄像元件及其制造方法、电子设备及其制造方法 |
JP4702384B2 (ja) * | 2008-03-26 | 2011-06-15 | ソニー株式会社 | 固体撮像素子 |
WO2010016195A1 (ja) * | 2008-08-05 | 2010-02-11 | パナソニック株式会社 | 撮像用光検出装置 |
JPWO2010016195A1 (ja) * | 2008-08-05 | 2012-01-12 | パナソニック株式会社 | 撮像用光検出装置 |
US8294076B2 (en) | 2008-08-05 | 2012-10-23 | Panasonic Corporation | Imaging device with columnar or plate-like transparent refractive index layers |
JP4455677B2 (ja) * | 2008-08-05 | 2010-04-21 | パナソニック株式会社 | 撮像用光検出装置 |
JP2010206009A (ja) * | 2009-03-04 | 2010-09-16 | Toshiba Corp | 撮像装置及びその製造方法、並びに撮像方法 |
JP2010141358A (ja) * | 2010-03-15 | 2010-06-24 | Sony Corp | 固体撮像素子 |
JP4702484B2 (ja) * | 2010-03-15 | 2011-06-15 | ソニー株式会社 | 固体撮像素子 |
US8878115B2 (en) | 2011-02-09 | 2014-11-04 | Canon Kabushiki Kaisha | Photoelectric conversion element, and photoelectric conversion apparatus and imaging system having a light guide |
JPWO2013031100A1 (ja) * | 2011-09-02 | 2015-03-23 | パナソニック株式会社 | 偏光撮像素子および内視鏡 |
US9293491B2 (en) | 2011-09-02 | 2016-03-22 | Panasonic Intellectual Property Management Co., Ltd. | Polarization image sensor and endoscope |
JPWO2013061489A1 (ja) * | 2011-10-24 | 2015-04-02 | パナソニックIpマネジメント株式会社 | カラー撮像装置 |
WO2023182202A1 (ja) * | 2022-03-22 | 2023-09-28 | 凸版印刷株式会社 | 固体撮像素子およびその製造方法 |
WO2023218842A1 (ja) * | 2022-05-10 | 2023-11-16 | 凸版印刷株式会社 | マイクロレンズアレイおよび固体撮像素子 |
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