JP2005277027A - Thin film pattern forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conductor pattern forming method capable of eliminating residuals of a conductor film and resist, generation of burrs of a conductor pattern, defects such as resist peeling or the like, further shortening a peeling operation in a liftoff process, and accurately forming a fine conductor pattern. <P>SOLUTION: During the liftoff process which is the most important process in the conductor pattern forming method, an entire substrate 1 is held by a chuck 10 and rotated together with the chuck 10 at the rotation speed ω of 1,000-1,500 rpm. While a nozzle 11 is repeatedly moved at a speed v of approximately 10 mm/s on the chuck 10 under these conditions, a resist stripper 12 is ejected from the spray port 11a of the nozzle 11 while pressurized by a pressure of approximately 10 MPa and blown onto the substrate 1. The resist stripper 12 is thus spread over entirely and to every corner of the substrate 1, and the burrs and residuals of the conductor film 9 are forcibly removed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film pattern forming method including a lift-off process.

  Conventionally, in this type of thin film pattern forming method, a dipping method has been used when the resist is dissolved and removed in the lift-off process (see, for example, Patent Document 1 and Patent Document 2).

  In a thin film pattern forming method such as a conductor, a resist 102 is first applied on the surface of a substrate 101 as shown in FIG. Then, as shown in FIG. 10B, the resist 102 is exposed and developed using a photomask or the like (not shown) to form an opening 103 having a desired pattern. Here, when the resist 102 is a positive type, the cross-sectional shape of the opening 103 is such that the side wall surface 104 is reversely tapered (undercut). Subsequently, as shown in FIG. 10C, a conductor film 105 in which, for example, a Ti (titanium) film 105a and an Au (gold) film 105b are stacked is formed. Then, lift-off processing is performed, and the entire substrate 101 is immersed in a resist stripping solution such as an NMP (N-methyl 2-pyrodrine) solution, so that the resist 102 is dissolved from the vicinity of the side wall surface 104 and stripped from the substrate 101. As a result, as shown in FIG. 10D, the resist 102 and the conductor film 105 on the resist 102 are removed, and only the conductor film 105 in the opening 103 is left on the substrate 101 as a conductor pattern. It is.

JP-A-6-196399 JP 10-335352 A

  However, the conventional thin film pattern forming method described above has the following problems. That is, the residue of the conductor film 105 tends to remain on the completed conductor pattern, the surface of the substrate 101, or the like. This is because, in the lift-off process, fragments of the conductor film 105 once peeled off from the substrate 101 together with the resist 102 float in the resist stripping solution, on the surface of the conductor pattern 105 having high interface affinity or on the surface of the substrate 101. This is because it adheres again. As described above, once the metal conductive film 105 is reattached to the surface of the substrate 101 such as GaAs, it is extremely difficult to peel it off later. Even if the substrate 101 is washed with pure water or the like. It is difficult to remove this residue. The same applies to the resist 102, and a piece of the resist 102 that has been peeled off may reattach to the surface of the substrate 101 or the conductor pattern 105.

  Also, as shown in FIG. 10D, burrs 109 may occur at the edge portions of the conductor pattern 105 during the lift-off process, but these burrs 109 are difficult to dissolve with the resist stripping solution, and the entire substrate 101 is removed. It cannot be sufficiently removed only by being immersed in the resist stripping solution.

  Further, in the dip method, since the entire substrate 101 is simply immersed in a resist stripping solution that hardly moves, the dissolution rate of the resist 102 by the resist stripping solution is slow, and the stripping operation takes a long time.

  Further, as shown in FIGS. 10B and 10C, when the pattern side wall surface 104 of the resist 102 is undercut, the upper side of the opening 103 is narrowed. The liquid cannot be sufficiently circulated into the opening 103, and the resist 102 is liable to be peeled off.

  The present invention has been made to solve the above-mentioned problems, eliminates the occurrence of burrs in the conductive pattern of the conductor film and the resist residue, resist peeling failure, etc., and shortens the peeling work in the lift-off process. An object of the present invention is to provide a thin film pattern forming method capable of forming a fine thin film pattern with high accuracy.

In order to solve the above-mentioned problems, a thin film pattern forming method according to the invention of claim 1 includes a resist coating process for coating a resist on the surface of an underlayer provided on a substrate or directly on the surface of the substrate, A resist patterning step in which an opening of a desired pattern is provided, and a thin film for forming a single-layer or multiple-layer thin film on the surface of the resist and on the surface of the substrate or the base layer exposed from the opening of the resist The resist stripping solution is sprayed from the spray port at a predetermined pressure while the film is formed and the substrate is rotated and the nozzle having the spray port facing the substrate is moved or repeatedly moved in the radial direction of the substrate. And a lift-off step of peeling the thin film on the resist together with the resist from the surface of the substrate or the surface of the underlayer by spraying on the substrate. It was configured for processing into a desired thin film pattern.
With this configuration, the resist stripping solution is sprayed from the nozzle at a predetermined pressure and sprayed onto the substrate. At this time, the nozzle for spraying the resist stripping solution moves or repeatedly moves in the radial direction on the substrate, and the substrate rotates, so that the resist stripping solution sprayed from the nozzle is applied to the resist and thin film on the substrate. , And sprayed evenly and angularly over the entire surface of the substrate from all directions.

  Further, dissolution and peeling of the resist are accelerated by a physical force such as hydrodynamic pressure and frictional force generated by the resist stripping liquid pressurized and sprayed from the nozzle, or centrifugal force accompanying the rotation of the substrate. In addition, thin film and resist residues, thin film pattern burrs, and the like are removed by the same physical force.

  Furthermore, when the resist stripping solution sprayed from the nozzle at a predetermined pressure is sprayed onto the substrate, it spreads to every corner deeply in the opening of the resist on the substrate. Chemical dissolution / peeling is performed.

According to a second aspect of the present invention, in the thin film pattern forming method according to the first aspect of the present invention, the rotational speed of the substrate is set to a value within a range of 1000 to 1500 rpm. 3. The thin film pattern forming method according to claim 1 or 2, wherein the resist stripping solution is sprayed while being pressurized to a pressure of at least about 10 MPa in a working atmosphere at normal temperature and pressure. In the thin film pattern forming method according to any one of claims 1 to 3, the speed of the nozzle movement or repetitive movement is set to approximately 10 mm / s, and the invention of claim 5 is the invention according to claims 1 to 3. 7. The thin film pattern forming method according to claim 4, wherein the distance between the substrate and the nozzle nozzle is set to a value within a range of 10 mm to 50 mm. In the thin film pattern forming method according to any one of claims 1 to 5, the time for which the lift-off process is continued is set to a value within a range of 60 to 90 seconds, and the invention of claim 7 7. The method for forming a thin film pattern according to claim 1, wherein a spray flow rate of the resist stripping solution is set to about 80 cm ³ / min.

  By the way, although the material of the thin film is arbitrary, as a good example, the invention of claim 8 defines a conductor film, and each layer of the conductor film is one of titanium, gold, aluminum, copper, or at least any of them. It was set as the structure which consists of an alloy containing these.

  Further, the type and structure of the substrate and the underlayer are also arbitrary. As a good example, the invention of claim 9 is the thin film pattern forming method according to any one of claims 1 to 8, wherein the substrate is The invention according to claim 10 is any one of a group 3-5 compound semiconductor substrate such as a gallium-arsenic substrate and an aluminum-gallium-arsenic substrate, a silicon substrate, a sapphire substrate, and a glass substrate. 9. The thin film pattern forming method according to any one of 9, wherein the underlayer is made of a film containing any of silicon, gallium-arsenic, and aluminum-gallium-arsenic, or a stack of the films. Or a structure in which two or more different types of films are stacked.

  The resist stripping solution is associated with the type of resist. The invention of claim 11 is the thin film pattern forming method according to any one of claims 1 to 10, wherein the resist stripping solution is: It is set as the structure which is a solution containing the solvent which has N methyl 2-pyrrolidone as a main component.

  According to a twelfth aspect of the present invention, in the thin film pattern forming method according to any one of the first to eleventh aspects, the resist is a positive photoresist. Of course, the resist may be a negative type. Furthermore, the thin film to be formed is preferably a conductor such as metal, but is not necessarily limited thereto. The thin film may be a semiconductor layer or an insulating layer such as a nitride film in addition to the metal. Furthermore, the thickness of the thin film should not be particularly limited, but includes, for example, a film thickness of up to about 1 μm.

  As described above, according to the inventions of claims 1 to 12, in addition to chemically dissolving the resist by the dissolving action of the resist stripping solution, the resist stripping solution is sprayed from the nozzle and sprayed onto the substrate. So, the hydrodynamic pressure, frictional force, centrifugal force, etc. can accelerate the dissolution / peeling of the resist, and the thin film residue and thin film pattern burrs can be physically removed. Has an excellent effect.

  Also, by forcibly spraying the resist stripping solution on the substrate, the resist stripping solution is spread over the resist side wall surface of the opening, and the resist can be reliably dissolved and stripped in the lift-off process. There is also an effect.

  In addition, the resist stripping solution can be sprayed onto the entire surface of the substrate without unevenness in terms of angle and position by rotating the substrate and moving or repetitively moving the nozzle, so that the resist can be reliably dissolved and stripped over the entire surface of the substrate. There is an excellent effect of being able to.

  As a result, the yield can be improved, and the manufacturing cost can be reduced. In addition, it is possible to achieve high reliability in a product having a thin film pattern processed by the lift-off method.

  The best mode of the present invention will be described below with reference to the drawings. In the following examples, a conductor pattern is formed as a thin film pattern.

  FIG. 1 is a cross-sectional view showing main steps constituting a conductor pattern forming method according to an embodiment of the present invention, and FIG. 2 is an outline of a lift-off device used in the conductor pattern forming method according to the embodiment of the present invention. FIG.

  This conductor pattern forming method includes a resist coating step (a) shown in FIG. 1 (a), a resist patterning step shown in FIG. 1 (b), a conductor film forming step shown in FIG. 1 (c), and FIG. Lift-off steps (d) to (f) shown in (d) to (f) are provided as the main steps.

As shown in FIG. 1A, the resist coating process is a process of coating a resist 2 such as a positive photoresist directly on the surface of a substrate 1 such as a GaAs (gallium arsenide) wafer.
As the substrate 1, in addition to a GaAs wafer, a Si (silicon) wafer, AlGaAs (aluminum-gallium-arsenic), a compound semiconductor wafer, a sapphire substrate, or the like can be used.

  The resist patterning step is a step of providing an opening 3 having a desired pattern in the resist 2 as shown in FIG. That is, when the resist 2 is a positive type photoresist, exposure is performed using a photomask 6 in which a desired pattern 5 is formed on the transparent substrate 4, and then development is performed. Then, only the exposed portion of the resist 2 remains after development, and the unexposed portion is dissolved, and an opening 3 having a desired pattern is formed in the resist 2. At this time, the cross-sectional shape of the opening 3 is an undercut shape as shown in FIGS. 1 (b) and 1 (c).

  In the conductor film forming step, as shown in FIG. 1C, a Ti (titanium) film 7 and an Au (gold) film 8 are laminated on almost the entire surface of the substrate 1 that has undergone the resist patterning process. 9 is a step of forming 9. That is, in this conductor film forming step, the Ti film 7 and the Au film 8 are formed as the conductor film 9 on the surface of the resist 2 and on the surface of the substrate 1 itself exposed from the opening 3 of the resist 2. Be filmed. In addition to the above Ti and Au, metals such as Al (aluminum) and Cu (copper) can be used as the conductor of the material constituting each layer of the conductor film 9. Alternatively, it is possible to use a film made of an alloy or a compound containing any of these metals. The conductor film 9 is formed by, for example, CVD or sputtering.

  Here, as a device for making it easier to pattern the conductor film 9, as described above, the cross-sectional shape of the opening 3 formed by patterning the positive resist 2 is made reversely tapered, and the resist 2 is thickened. It is preferable to increase the step between the surface of the resist 2 and the surface of the substrate 1. That is, the step coverage of the conductor film 9 on the side wall surface 13 of the opening 3 is intentionally reduced by increasing the step. Furthermore, the step coverage of the conductive film 9 is further reduced by making the side wall surface 13 of the opening 3 undercut. Thus, by reducing the film formation step coverage of the conductor film 9, the continuity between the conductor film 9 on the resist 2 and the conductor film 9 in the opening 3 is broken, and the resist film 2 on the resist 2 is removed in the lift-off process. The conductor film 105 is easily separated (removed) from the conductor film 9 in the opening 3.

  In the lift-off process, as shown in FIGS. 1 (d) to 1 (f), the entire substrate 1 that has undergone the conductive film deposition process is held and rotated by a chuck 10 (see FIG. 2) while rotating the substrate 1 This is a step of peeling the conductor film 9 on the resist 2 from the substrate 1 together with the resist 2 by pressurizing and spraying the resist stripping solution 12 while the nozzle 11 is repeatedly moved above 1.

  Specifically, it is executed by an apparatus as shown in FIG. That is, the entire substrate 1 is held by the vacuum chuck 10 and the substrate 1 is rotated in one direction together with the chuck 10 at a predetermined rotational speed ω. Here, the rotational speed (that is, the rotational speed of the entire substrate 1) ω was set to a value within the range of 1000 to 1500 rpm.

  In parallel with this, the nozzle 11 is repeatedly moved along the radial direction of the substrate 1 while maintaining the posture in which the injection port 11 a faces the substrate 1. The speed v of the repetitive movement of the nozzle 11 is set to approximately 10 mm / s, and the distance between the nozzle 11 a of the nozzle 11 and the substrate 1 is set to a value within the range of 10 mm to 50 mm. Further, the diameter φ of the injection port 11a of the nozzle 11 is 0.1 mm. At this time, the nozzle 11 is preferably perpendicular to the surface of the substrate 1 with the injection port 11a facing the surface of the substrate 1, but the inclination θ with respect to the substrate 1 is allowed within a range of 90 ° ± 15 °. Is done. Such a nozzle 11 is moved by a drive mechanism 23 such as a servo motor, and the drive mechanism 23 is controlled by a controller 24.

While rotating the entire substrate 1 together with the chuck 10 as described above, the resist stripping liquid 12 is pressurized and sprayed at a predetermined pressure from the nozzle 11 a of the nozzle 11 while the nozzle 11 is repeatedly moved on the substrate 1. To do. In this way, as shown in FIG. 1 (d), the resist stripping solution 12 is uniformly and strongly sprayed on the substrate 1. The pressure of the resist stripping solution 12 sprayed from the nozzle 11 is set to about 10 MPa in a working atmosphere at normal temperature and pressure, and the spraying flow rate of the resist stripping solution 12 is set to about 80 cm ³ / min (min). . As the resist stripping solution 12, for example, a solution containing a solvent mainly composed of N-methyl-2-pyrrolidone is preferably used. The resist stripping solution 12 is supplied from the stripping solution supplier 21 to the pressurizing device 22, pressurized to a predetermined pressure by the pressurizing device 22, and sent to the nozzle 11. It is injected from the injection port 11a by pressure.

  When the resist stripping solution 12 is sprayed onto the substrate 1 under such pressure, the resist stripping solution 12 dissolves the resist 2 from the side wall surface 13 of the opening 3 of the resist 2 as shown in FIG. At the same time, the resist 2 penetrates between the resist 2 and the surface of the substrate 1 to peel the resist 2 from the surface of the substrate 1. The duration of this lift-off process is set in the range of 60 to 90 seconds.

  In this manner, when the resist stripping solution 12 is sprayed onto the substrate 1 in the lift-off process, the conductor film 9 on the resist 2 is stripped from the substrate 1 together with the resist 2 as shown in FIG. As a result, the conductor pattern 15 is formed on the substrate 1.

  Next, the operation and effect of the conductor pattern forming method of this embodiment will be described. FIGS. 3 to 6 are schematic views showing the actions and effects exhibited by the conductor pattern forming method according to the embodiment of the present invention in the lift-off process.

  In the lift-off process, which is the main process in this conductor pattern forming method, as shown in FIG. 2, the entire substrate 1 is held by the chuck 10 and rotated at a rotational speed ω of 1000 to 1500 rpm. In this state, while the nozzle 11 is repeatedly moved at a speed v of about 10 mm / s, the resist stripping solution 12 is sprayed from the spray port 11a of the nozzle 11 to a pressure of about 10 MPa and sprayed onto the substrate 1. Yes.

  Therefore, as shown in FIG. 3, the entire substrate 1 is rotated at an angular velocity ω, and the resist stripping solution 12 is sprayed onto the substrate 1 while the nozzle 11 repeatedly moves at a velocity v along the rotational radius direction. Therefore, when the entire substrate 1 is viewed in a fixed manner, the ejection port 11 a of the nozzle 11 draws a trajectory that goes around the entire substrate 1. As a result, the resist stripping liquid 12 sprayed from the nozzle 11 is sprayed uniformly over the entire surface of the entire substrate 1.

  Further, as shown in FIG. 4, when attention is paid to one element 14 among a plurality of elements formed on the substrate 1, the element 14 repeats the nozzle 11 while the entire substrate 1 makes one round. It will face all directions with respect to the locus of movement v. As a result, the resist stripping solution 12 is uniformly sprayed on one element 14 from all directions.

  Further, since the entire substrate 1 is rotating at a high rotational speed ω of 1000 to 1500 rpm, the resist stripping solution 12 can be spread on the substrate 1 by the centrifugal force. At the same time, the conductor film 9 and the resist 2 that have been peeled off are swept out to the outside of the entire substrate 1 by the centrifugal force generated by the rotation, so that the fragments and the like do not reattach to the surface of the substrate 1.

  Further, as shown in FIG. 5, since the flow Q of the resist stripping liquid 12 ejected from the nozzle 11 at a pressure of 10 MPa has physical (hydrodynamic) energy, the resist stripping liquid 12 By the force F such as dynamic pressure and frictional force exerted by the physical energy of the flow Q, the dissolution / peeling of the resist 2 is further promoted, and the resist 2 is surely peeled off.

  Further, as shown in FIG. 6A, the burr 16 generated at the edge portion of the conductor pattern 15 at the time of lift-off has a flow Q of the resist stripping solution 12 as shown in FIG. It can be strongly removed by the physical force F such as dynamic pressure and frictional force.

  Also, as shown in FIG. 7A, even if the residue 17 of the conductor film 9 is reattached to the substrate 1, as shown in FIG. 7B, as in the case of the burr 16, The residue 17 of the conductor film 9 can be removed by the physical force F of the flow Q of the resist stripping solution 12.

  Further, as shown in FIG. 8, the resist stripping liquid 12 pressurized and sprayed from the nozzle 11 becomes a flow Q with high fluid energy and is sprayed onto the substrate 1, so that the resist stripping liquid 12 is resisted. Thus, the resist 2 can be dissolved and peeled off more reliably. In addition, since the resist stripping solution 12 is forcibly spread over the entire substrate 1 by spraying, the time required for the lift-off process can be greatly reduced as compared with the conventional immersion-only method.

  In addition, this invention is not limited to said Example, A various deformation | transformation and change are possible within the range of the summary of invention. For example, in the above embodiment, the resist 2 is formed directly on the surface of the substrate 1 made of GaAs. However, as shown in FIG. 9 as an example, the n-type GaAs film 18 and the p-type GaAs are formed on the surface of the substrate 1. After the resist 2 is formed on the surface of the underlayer 20 formed by laminating the film 19, the conductive pattern 15 is formed on the surface of the underlayer 20 through the lift-off process similar to the above embodiment. May be. Here, as a material of the film constituting the underlayer 20, in addition to the GaAS film as described above, a film of Si (silicon), AlGaAs (aluminum-gallium-arsenic), or any one of them is used. A film made of a compound may be used. Alternatively, it is made of the above-mentioned material, such as laminating a film of a substance such as Si or a compound thereof, or forming a base layer by laminating a Si polycrystalline film and a Si oxide film, for example. It is also possible to stack two or more different types of films or films made of compounds.

  In the above embodiment, the case where the conductor film 9 formed by laminating the Ti film 7 and the Au film 8 is processed to form the conductor pattern 15 such as the conductor wiring is described. In addition to this, the material of the film can be applied to, for example, an ITO (indium-tin oxide) film or a conductive film in which an organic film is mixed with a conductive material is patterned by a lift-off method. is there.

  In the above embodiment, the rotation speed ω of the substrate 1 is set to a value in the range of 1000 to 1500 rpm, the spray pressure of the resist stripping solution 12 is set to approximately 10 MPa in a working atmosphere at normal temperature and normal pressure, and the speed v of repeated movement of the nozzle 11 is achieved. The resist stripping solution 12 is set to about 10 mm / s, the distance between the nozzle 11 a of the nozzle 11 and the substrate 1 is set to a value within the range of 10 mm to 50 mm, the duration of the lift-off process is set to the range of 60 to 90 seconds. The injection flow rate was set to approximately 80 cm3 / min (min), and the machining conditions during the lift-off process were limited. However, the machining conditions are not limited to this, and the lift-off process is performed by appropriately changing the machining conditions. Of course it can be done.

  Moreover, in the said Example, since the high pressure injection of about 10 Mpa is performed from the nozzle 11 with the aperture diameter of 0.1 mm, the wear of the nozzle 11 is quick. Therefore, it is preferable that the nozzle 11 is made of diamond or the like.

It is sectional drawing which shows the main processes which comprise the conductor pattern formation method which concerns on the Example of this invention. It is the schematic of the lift-off apparatus used for the conductor pattern formation method which concerns on the Example of this invention. It is a schematic diagram which shows the effect | action which sprays resist stripping solution over the whole surface of the board | substrate in a lift-off process. It is a schematic diagram which shows the effect | action which 1 element on the board | substrate in a lift-off process receives resist stripping solution from all directions. It is a schematic diagram which shows the effect | action which the flow of the resist stripping solution injected in the lift-off process promotes the reliable peeling of a resist. It is a schematic diagram which shows the effect | action which the flow of the sprayed resist stripping solution in a lift-off process removes the burr | flash of the edge part of a conductor pattern. It is a schematic diagram which shows the effect | action which the flow of the resist stripping solution sprayed in the lift-off process removes the residue of a conductor film. It is a schematic diagram which shows the effect | action which the flow of the sprayed resist stripping solution in a lift-off process spreads to every corner from the opening part of a resist. It is sectional drawing which shows an example of a laminated structure at the time of providing a base layer on the surface of a board | substrate. It is sectional drawing which shows the flow of the construction method of the conventional conductor pattern formation method.

Explanation of symbols

1: substrate, 2: resist, 3: opening, 9: conductor film, 10: chuck,
11: Nozzle, 11a: Injection port, 12: Resist stripping solution, 13: Side wall surface,
15: Conductor pattern, 16: Burr, 17 ... Residue.

Claims (12)

A resist coating step of coating a resist on the surface of the underlayer provided on the substrate or directly on the surface of the substrate;
A resist patterning step of providing an opening of a desired pattern in the resist;
A thin film forming step of forming a single-layer or multiple-layer thin film on the surface of the resist and on the surface of the substrate or the underlayer exposed from the opening of the resist;
The resist stripping solution is sprayed from the spray port at a predetermined pressure while rotating the substrate and moving or repeatedly moving the nozzle having the spray port facing the substrate in the radial direction of the substrate. And a lift-off step of peeling the thin film on the resist together with the resist from the surface of the substrate or the surface of the underlayer by spraying onto the substrate, and processing the thin film into a desired thin film pattern, A thin film pattern forming method. In the thin film pattern formation method of Claim 1,
The rotation speed of the substrate was set to a value in the range of 1000 to 1500 rpm,
A method for forming a thin film pattern. In the thin film pattern formation method of Claim 1 or Claim 2,
The resist stripping solution is sprayed at a pressure of at least about 10 MPa in a working atmosphere at normal temperature and pressure.
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 3,
The speed of the nozzle movement or repetitive movement was set to approximately 10 mm / s.
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 4,
The distance between the substrate and the nozzle nozzle was set to a value in the range of 10 mm to 50 mm,
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 5,
The duration of the lift-off process was set to a value in the range of 60 to 90 seconds,
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 6,
The spray flow rate of the resist stripping solution was set to about 80 cm ³ / min.
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claim 1 thru | or 7,
Each layer of the thin film is made of titanium, gold, aluminum, copper, or an alloy containing at least any one of them,
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 8,
The substrate is any one of a group 3-5 compound semiconductor substrate, a silicon substrate, a sapphire substrate, and a glass substrate.
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 9,
The base layer is made of a film containing any of silicon, gallium / arsenic, aluminum / gallium / arsenic, or a laminate of the films, or two different types of the substances It is formed by laminating the above films.
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 10,
The resist stripping solution is a solution containing a solvent mainly composed of N-methyl-2-pyrrolidone.
A method for forming a thin film pattern. In the thin film pattern formation method in any one of Claims 1 thru | or 11,
The resist is a positive type photoresist,
A method for forming a thin film pattern.

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