JP2005276988A - Jig for semiconductor thin-film wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a jig for semiconductor thin-film wafer that can handle a semiconductor thin film wafer, without breaking the wafer. <P>SOLUTION: The jig 1 for semiconductor thin film wafer is composed of a wafer holder 2, which holds the semiconductor thin film wafer in a state where the holder 2 is brought into contact with the lower main surface of the wafer and a clamp part 3 which handles the wafer. One end of the wafer holder 2 is coupled with the clamp part 3, and the other end of the holder 2 is extended in a direction in which the end is separated from the clamp part 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor thin film wafer jig.

  As a result of many years of progress in materials and element structures used in light-emitting elements such as light-emitting diodes and semiconductor lasers, the photoelectric conversion efficiency inside the elements is gradually approaching the theoretical limit. Therefore, when an element with higher luminance is to be obtained, the light extraction efficiency from the element is extremely important. For example, in a light emitting device having a light emitting layer portion formed of AlGaInP mixed crystal, a thin AlGaInP (or GaInP) active layer is sandwiched between an n-type AlGaInP clad layer and a p-type AlGaInP clad layer having a larger band gap. By adopting a sandwiched double hetero structure, a high-luminance element can be realized. Such an AlGaInP double heterostructure can be formed by epitaxially growing each layer of an AlGaInP mixed crystal on a GaAs single crystal substrate by utilizing the lattice matching of the AlGaInP mixed crystal with GaAs. When this is used as a light emitting element, a GaAs single crystal substrate is usually used as an element substrate as it is. However, since the AlGaInP mixed crystal constituting the light emitting layer has a larger band gap than GaAs, the emitted light is absorbed by the GaAs substrate, and it is difficult to obtain sufficient light extraction efficiency. In order to solve this problem, various publications including the following Patent Document 1 disclose that a growth GaAs substrate is peeled off while a reinforcing element substrate made of a semiconductor is used for reflection. A technique of bonding to a peeled surface through an Au layer is disclosed.

JP 2001-339100 A

  By the way, in order to obtain the light-emitting element bonded as described above, it is necessary to handle a very thin semiconductor wafer including the light-emitting layer portion in many processes including the bonding process. Sometimes. However, such a thin semiconductor wafer (hereinafter referred to as a semiconductor thin film wafer) is often damaged when handled in a state of being sandwiched by means such as tweezers, for example, and thus in terms of cost. There was a problem of increased waste.

  Therefore, an object of the present invention is to provide a semiconductor thin film wafer jig that can be handled without damaging the semiconductor thin film wafer.

Means for solving the problems / effects of the invention

In order to solve the above problems, the first invention of the semiconductor thin film wafer jig of the present invention,
It comprises a wafer holding unit that contacts and holds the lower main surface of the semiconductor thin film wafer, and a grasping unit that handles the semiconductor thin film wafer,
One end of the wafer holding portion is coupled to the grasping portion, and the other end side is extended in a direction away from the grasping portion.

  According to the first invention, the jig for the semiconductor thin film wafer is scooped up in a state where the wafer holding portion is in contact with the lower main surface of the semiconductor thin film wafer (hereinafter also simply referred to as a thin film wafer), that is, the wafer holding portion. It is assumed that handling is performed with a thin film wafer placed thereon. Rather than sandwiching the thin film wafer by means such as conventional tweezers, handling is performed without damaging the thin film wafer by holding the jig in contact with only one main surface of the thin film wafer. It becomes possible. Moreover, it is easy to hold the thin film wafer in a stable state by placing it on the holding surface of the wafer holding unit instead of sandwiching it.

  In such a semiconductor thin film wafer jig according to the first invention, the thin film wafer can be held in a state where the wafer holding portion is in contact with only one main surface (lower main surface). Even in the manufacturing process of the combined light emitting element, even when the main surface on one side of the thin film wafer to be handled is exposed to a light emitting layer, a metal layer for bonding, or the like that is not preferably scratched By holding the main surface on the opposite side as the lower main surface, handling can be performed without damaging the exposed light emitting layer or metal layer.

  In addition to the requirements of the first invention, the second invention of the semiconductor thin film wafer jig of the present invention comprises a suction hole having an opening in the holding surface of the wafer holding portion, and a suction means communicating with the suction hole, By reducing the pressure inside the suction hole by the suction means, the semiconductor thin film wafer can be sucked and held on the holding surface of the wafer holding portion. When the suction means is provided as described above, even if the thin film wafer that is rolled up by turning the wafer holding portion upside down is inverted, the holding state can be maintained by adsorbing the thin film wafer to the holding surface.

In such a semiconductor thin film wafer jig according to the second invention, in the manufacturing process of the bonded light emitting element, as in the semiconductor thin film wafer jig of the first invention, the exposed light emitting layer or metal layer is removed. In addition to being able to handle without damaging, it is also possible to hold a thin film wafer even if the wafer holder is turned upside down, so the main surface where the light emitting layer and metal layer are exposed The thin film wafer is held by scooping up from the main surface side opposite to the upper main surface, and then the wafer holding part is turned upside down with the thin film wafer adsorbed so that the light emitting layer and the metal layer are With the exposed main surface facing downward, the thin film wafer can be brought into close contact with the element substrate through the metal layer.
Then, using the semiconductor thin film wafer jig according to the second invention, the compound semiconductor layer is held by scooping up from the first main surface side, and then the wafer holding portion in a state where the compound semiconductor is adsorbed Is turned upside down and the compound semiconductor layer is handled in close contact with the element substrate through the metal layer with the second main surface facing downward.

  In addition to the requirements of the first invention, the third invention of the semiconductor thin film wafer jig of the present invention has a protrusion on the holding surface, and the protrusion is in point contact with the lower main surface. The semiconductor thin film wafer can be configured to be held in a state in which the semiconductor thin film wafer is in contact with. By comprising in this way, the damage | wound which generate | occur | produces on the thin film wafer surface can be reduced markedly compared with the case where a wafer holding part contacts a thin film wafer. Therefore, in the manufacturing process of the bonded light emitting element, the main surface of the thin film wafer to be handled is exposed to a light emitting layer, a metal layer for bonding, or the like that is not preferably scratched. However, handling can be performed by bringing the wafer holding portion into contact with the main surface from which these layers are exposed. In addition, it is more preferable that the protrusion is made of silicon rubber because contamination to the thin film wafer can be reduced.

  Next, the semiconductor thin film wafer jig of the present invention is provided so as to be coupled to at least one of the wafer holding portion and the grasping portion, and is brought into contact with the outer peripheral edge of the semiconductor thin film wafer held by the wafer holding portion. The in-plane direction constraining portion that prevents the semiconductor thin film wafer from shifting on the holding surface can be provided.

  Next, the jig for a semiconductor thin film wafer according to the present invention includes an engaging portion that can be engaged with an orientation mark portion formed by cutting out a part of the outer peripheral edge of the semiconductor thin film wafer, On the holding surface, the semiconductor thin film wafer can be held in an aligned state by engaging the orientation mark portion with the engaging portion. The orientation mark formed by cutting out a part of the outer peripheral edge of the semiconductor thin film wafer is an orientation flat in which the outer peripheral edge of the thin film wafer is cut out by a straight line, and the outer peripheral edge of the thin film wafer is U-shaped or V-shaped. Orientation notches cut out at the top.

Embodiments of the present invention will be described below with reference to the drawings.
(First embodiment)
FIG. 1 is a view showing a semiconductor thin film wafer jig 1 according to the first invention of the present invention. A semiconductor thin film wafer jig 1 (hereinafter also simply referred to as a wafer jig 1) includes a wafer holding portion 2 having a holding surface 21 on which a semiconductor thin film wafer (hereinafter also simply referred to as a thin film wafer) is placed, and a thin film The wafer holding unit 2 has a structure in which one end is coupled to the grasping unit 3 and the other end is extended in a direction away from the grasping unit 3. Yes. The handling of the thin film wafer is performed by the grasping unit 3 grasped by a human hand and the wafer holding unit 2 being operated. The wafer jig 1 is composed of a Teflon-processed member.

  The grasping unit 3 extends toward the upper side of the holding surface 21 so that the wafer holding unit 2 can easily lift the thin film wafer. Specifically, the extending direction of the grasping unit 3 is preferably set so that the angle α with respect to the holding surface 21 is in the range of 90 ° to 180 °, for example. In addition, the grasping unit 3 includes a reinforcing column 35 for reinforcement.

  As shown in FIG. 3, the handling of the thin film wafer is performed by using the wafer holding unit 2 for the handling space 200S with respect to the thin film wafer 100 placed in a form in which the handling space 200S is created below the lower main surface 102. This is done by inserting it into and crawling up. As a result, as shown in FIG. 2, the thin film wafer 100 is held in a state of being placed on the holding surface 21 of the wafer holding unit 2 (a state in which the holding surface 21 is in contact with the lower main surface 102). . The wafer holding unit 2 has, for example, a bifurcated fork shape constituted by two rod-shaped members provided in parallel, and the extending direction of the rod-shaped member, that is, the direction toward the tip of the fork (in FIG. 1) The direction of the arrow) is the insertion direction. The handling space 200S has a shape into which the fork-shaped wafer holding unit 2 can be inserted. Specifically, the handling space 200S is formed to penetrate the mounting member 200 in the insertion direction. The wafer holding unit 2 is not limited to the fork shape as described above, but may be any shape as long as the thin film wafer 100 can be placed on the holding surface 21, and the handling space 200S so that such a shape can be inserted. Need only be configured.

  In the wafer holding unit 2, the length along the insertion direction (length of the rod-shaped member) L is the maximum depth of the thin film wafer 100 in the insertion direction (for example, the diameter of the thin film wafer 100 if it is disk-shaped). Is set to the same level. Further, as shown in FIG. 2, the maximum width of the thin film wafer 100 (for example, the diameter of the thin film wafer 100 if it is a disk) is defined as the wafer width W, and the two in the two-fork-shaped wafer holder 2 When the distance between the centers of the rod-shaped members is a fork interval T, the thin film wafer 100 is held in a state where the center of the wafer width W and the center of the fork interval T are approximately the same. In that case, the fork interval T is preferably set to about 20 to 80% of the wafer width W. If it is out of the range, it may be difficult to stabilize the thin film wafer 100 on the holding unit 2.

  FIG. 4 is a diagram illustrating a first modification of the first embodiment of FIG. According to FIG. 4, the semiconductor thin film wafer jig 1 is constrained in the in-plane direction so as to be in contact with the outer peripheral surface of the disc-shaped thin film wafer 100 coupled in the vicinity of the coupling site between the wafer holding unit 2 and the grasping unit 3. Part 4 is provided. The in-plane direction constraining portion 4 abuts on the outer peripheral edge 103 of the thin film wafer 100 held by the wafer holding portion 2 (see FIG. 5), thereby preventing the thin film wafer 100 from being displaced on the holding surface 21. More specifically, as shown in the cross-sectional structure of FIG. 5, the in-plane direction constraining portion 4 contacts the side portion 43 that contacts the outer peripheral edge 103 of the thin film wafer 100 and the vicinity of the outer peripheral edge 103 of the lower main surface 102. The lower part 42 which touches is comprised in L shape. Accordingly, the side portion 43 prevents the thin film wafer 100 from being displaced, and the lower portion 42 assists the holding of the thin film wafer 100 by the wafer holding portion 2.

  The in-plane direction constraining portion 4 has a shape that abuts only about the semicircular portion on the grasping portion 3 side of the outer peripheral edge 103 of the thin film wafer 100. This means that the in-plane direction constraining portion 4 is open on the side in the direction of insertion into the handling space, and has a shape that does not interfere when the thin film wafer 100 is placed on or lowered onto the wafer holding portion 2. It has become. Further, in the case of such a shape, the thin film wafer 100 is held when the holding surface 21 of the wafer holding unit 2 is slightly tilted toward the grasping unit 3 from the horizontal direction, so that the outer peripheral edge 103 becomes the in-plane direction binding unit 4. Therefore, it is easy to obtain the effect of preventing the deviation as described above.

  FIG. 6 is a diagram illustrating a second modification of the first embodiment of FIG. According to FIG. 6, the semiconductor thin film wafer jig 1 has an engaging portion 5 that can be engaged with an orientation mark portion 105 (see FIG. 7) formed by cutting out a part of the outer peripheral edge 103 of the thin film wafer 100. Prepare. Then, on the holding surface 21 of the wafer holding unit 2, the thin film wafer 100 can be held in an aligned state by engaging the orientation mark unit 105 with the engaging unit 5. The orientation mark portion 105 formed by cutting out a part of the outer peripheral edge 103 of the thin film wafer 100 is an orientation flat 105F in which the outer peripheral edge 103 of the thin film wafer 100 shown in FIG. And an orientation notch 105N in which the outer peripheral edge 103 of the thin film wafer 100 shown in FIG. 7B is cut out in a U-shape or a V-shape, and the like, and the engagement surface 53 of the engagement portion 5 has a shape adapted to each shape. It has become. Further, in the case of such a shape, when the thin film wafer 100 is held, if the holding surface 21 of the wafer holding unit 2 is slightly inclined to the grasping unit 3 side from the horizontal direction, the orientation mark unit 105 is brought into engagement with the engaging unit 5. Since it becomes easy to keep in the engaged state, it is easy to obtain the effect of the alignment as described above.

(Second embodiment)
FIG. 8 is a view showing a semiconductor thin film wafer jig 1 according to the second invention of the present invention. In the following, differences from the first embodiment of FIG. 1 will be mainly described, and the same parts will be denoted by the same reference numerals in FIG. 8 to simplify the description. In addition, in this embodiment, the modification similar to the 1st modification (FIG. 4) and 2nd modification (FIG. 6) in 1st embodiment can also be comprised. According to FIG. 8, the semiconductor thin film wafer jig 1 includes a suction hole 61 having an opening in the holding surface 21 of the wafer holder 2, and suction means (not shown) communicating with the suction hole 61. The communication path from the suction hole 61 to the suction means (not shown) includes a hollow part (not shown) formed inside the wafer holding part 2 and the grasping part 3, and an end part of the grasping part 3 of the hollow part. And a hose 62 attached to the opening provided in. Then, the inside of the suction hole 61 is depressurized by a suction means (not shown), so that the thin film wafer 100 is sucked and held on the holding surface 21 of the wafer holding unit 2. Thereby, even if the thin film wafer 100 with the wafer holding unit 2 lifted up is inverted, the holding state can be maintained by adsorbing the thin film wafer 100 to the holding surface 21. In addition, the grasping unit 3 is provided with a control button 63 that controls adsorption by opening / closing the middle of the communication path.

  Further, the position where the suction hole 61 is formed on the holding surface 21 of the wafer holding unit 2 is the maximum depth of the thin film wafer 100 in the insertion direction of the wafer holding unit 2 (for example, if the thin film wafer 100 has a disk shape). About half of the diameter), that is, in the wafer holding portion 2, the rod-shaped member is formed at approximately the center position in the length L direction (length L along the insertion direction).

  The suction means is provided with a hollow part (not shown) connected to the opening of the suction hole 61 inside the wafer holding part 2 and the grasping part 3 without providing a pump or the like. It can also be realized by configuring as a mechanism in which the region including the opening of the suction hole 61 is depressurized by being pushed.

(Third embodiment)
FIG. 9 is a view showing a semiconductor thin film wafer jig 1 according to the third aspect of the present invention. The following mainly describes differences from the first embodiment of FIG. 1, and the same portions are given the same reference numerals in FIG. 9 to simplify the description. In addition, in this embodiment, the modification similar to the 1st modification (FIG. 4) and 2nd modification (FIG. 6) in 1st embodiment can also be comprised. According to FIG. 9, the semiconductor thin film wafer jig 1 has a protrusion 7 on the holding surface 21 of the wafer holder 2. And the thin film wafer 100 is hold | maintained in the state which the said projection part 7 contact | abutted to the lower main surface 102 in the point contact form. With this configuration, it is possible to significantly reduce the occurrence of scratches on the surface (lower main surface 102) of the thin film wafer 100, as compared with the above case where the wafer holding unit 2 is in surface contact with the thin film wafer 100. it can. Further, the protrusion 7 is made of silicon rubber and prevents the thin film wafer 100 from being contaminated.

  In order to hold the thin film wafer 100 in a stable state on the wafer holding unit 2, it is preferable that three or more protrusions 7 are provided on the holding surface 21 (however, all the protrusions 7 are on the same straight line). Unless it exists in In the present embodiment, the projections 7 are formed at two points for each of the two rod-shaped members constituting the fork-shaped wafer holding unit 2, for a total of four points, and the positions at which the projections 7 are formed. Is a distance of about one third of the length L from each end of the rod-like member on the holding surface 21 of the wafer holding unit 2.

  FIG. 10 is a conceptual diagram showing an embodiment of the light emitting element 10. The light emitting element 10 uses the first main surface 10a of the compound semiconductor layer 10C having the light emitting layer portion 110 as a light extraction surface, and emits light from the light emitting layer portion 110 to the second main surface 10b side of the compound semiconductor layer 10C. It has a structure in which a Si substrate 10S made of n-type Si (silicon) single crystal, which is a conductive substrate forming an element substrate, is coupled via a metal layer 10M having a reflection surface that reflects on the light extraction surface 10a side. Become.

  The light emitting layer portion 110 includes an active layer 111 made of an AlGaInP mixed crystal, a first conductivity type cladding layer, in this embodiment a p-type cladding layer 113 made of a p-type AlGaInP mixed crystal, and the first conductivity type cladding layer. It has a structure sandwiched between different second conductivity type cladding layers, in this embodiment, an n-type cladding layer 112 made of an n-type AlGaInP mixed crystal, and the emission wavelength varies from green to red depending on the composition of the active layer 111. Can be adjusted. In the light emitting element 10, a p-type AlGaInP cladding layer 113 is disposed on the metal electrode 130 side, and an n-type AlGaInP cladding layer 112 is disposed on the metal layer 10M side. Therefore, the conduction polarity is positive on the metal electrode 130 side.

  A current diffusion layer 120 made of GaP is formed on the main surface of the light emitting layer portion 110 opposite to the Si single crystal substrate 100S, and the light emitting layer is formed at the approximate center of the main surface 10a. A metal electrode (for example, Au electrode) 130 for applying a light emission driving voltage to the portion 110 is formed so as to cover a part of the main surface 10a. A region around the metal electrode 130 on the main surface 10 a of the current diffusion layer 120 forms a light extraction region from the light emitting layer part 110. Note that the GaP current diffusion layer 120 is translucent to the light emitted from the light emitting layer portion 110.

  Further, a metal electrode (back electrode: Au electrode, for example) 140 is formed on the back surface of the Si single crystal substrate 10S so as to cover the entire surface. When the metal electrode 140 is an Au electrode, an AuSb bonding metal layer 173 is interposed as a substrate-side bonding metal layer between the metal electrode 140 and the Si single crystal substrate 10S. The Si single crystal substrate 10S is manufactured by slicing and polishing an Si single crystal ingot, and the thickness thereof is, for example, 100 μm or more and 500 μm or less. Then, it is bonded to the light emitting layer portion 110 with the metal layer 10M interposed therebetween. The entire metal layer 10M is configured as an Au-based layer.

  Between the light emitting layer part 110 and the metal layer 10M, an AuGeNi bonding metal layer 171 is formed as a light emitting layer part side bonding metal layer, which contributes to reducing the series resistance of the element. Further, an AuSb bonding metal layer 172 as a substrate-side bonding metal layer is formed between the Si single crystal substrate 10S and the metal layer 10M so as to be in contact with the main surface of the Si single crystal substrate 10S.

  The light from the light emitting layer part 110 is extracted in such a manner that the light reflected directly from the light extraction surface 10a is superimposed on the light reflected by the metal layer 10M. The thickness of the metal layer 10M is desirably 80 nm or more in order to ensure a sufficient reflection effect. Moreover, although there is no restriction | limiting in particular in the upper limit of thickness, since a reflective effect is saturated, it determines suitably (for example, about 1 micrometer) by balance with cost.

Hereinafter, a method for manufacturing the light emitting element 10 of FIG. 10 will be described.
First, as shown in step 1 of FIG. 11, a p-type GaAs buffer layer 161 is made of, for example, 0.5 μm and AlAs on the main surface of a GaAs single crystal substrate 150 which is a semiconductor single crystal substrate that forms a light emitting layer growth substrate. The peeling layer 162 is epitaxially grown in this order, for example, 0.5 μm. Thereafter, a 1 μm n-type AlGaInP cladding layer 112, a 0.6 μm AlGaInP active layer (non-doped) 111, and a 1 μm p-type AlGaInP cladding layer 113 are epitaxially grown in this order as the light emitting layer portion 110.

  Next, as shown in Step 2, a current diffusion layer 120 made of p-type GaP is epitaxially grown on the formed light-emitting layer portion 110 (on the p-type AlGaInP cladding layer 113) by 50 μm, for example. Thereby, the compound semiconductor layer 10 </ b> C including the light emitting layer part 110 and the GaP current diffusion layer 120 is formed. The GaP current diffusion layer 120 is translucent to light emitted from the light emitting layer portion 110.

  Next, the process proceeds to step 3, and the stacked body in which the GaAs single crystal substrate 150, the GaAs buffer layer 161, the AlAs release layer 162, and the compound semiconductor layer 10C are formed in this order is used as an etching solution made of, for example, a 10% hydrofluoric acid aqueous solution. The GaAs single crystal substrate 150 (which is opaque to the light from the light emitting layer portion 110) is obtained by selectively etching the AlAs peeling layer 162 formed between the buffer layer 161 and the light emitting layer portion 110. Then, it is removed from the compound semiconductor layer 10C (consisting of the light emitting layer portion 110 and the current diffusion layer 120).

  Next, the process proceeds to Step 4, and the AuGeNi bonding metal layer 171 is dispersedly formed on the second main surface 10b of the compound semiconductor layer 10C (the main surface where the light emitting layer portion 110 is exposed). Thereafter, the first Au-based layer 131 is formed so as to cover the AuGeNi bonding metal layer 171. On the other hand, AuSb bonding metal layers 172 and 173 serving as substrate-side bonding metal layers are formed on both main surfaces of a separately prepared Si single crystal substrate 10S (n-type), and a second Au-based material is formed on the AuSb bonding metal layer 172. Layer 132 is formed. Further, a back electrode layer 140 (for example, made of an Au-based metal) is formed on the AuSb bonding metal layer 173 (see FIG. 5). The formation of each metal layer in the above steps can be performed using sputtering or vacuum deposition. In this embodiment, the metal layer is formed by vacuum deposition.

  The compound semiconductor layer 10C obtained by the step 3 or the compound semiconductor layer 10C formed with the first Au-based layer 131 obtained by the step 4 has a light emitting layer portion 110 of 2.6 μm, a GaP current diffusion layer 120 of 50 μm, Since one Au-based layer 131 is a very thin wafer (thin film wafer) of 0.5 μm, it is easily damaged when handled in a state of being sandwiched by means such as tweezers. Therefore, handling is performed using the semiconductor thin film wafer jig 1 of the present invention. Since the wafer jig 1 can hold the thin film wafer in a state where the wafer holding portion 2 is in contact with only one main surface, it can be handled without damaging the thin film wafer. . When the compound semiconductor layer 10C is simply translated, the wafer jig 1 in all the above embodiments can be suitably used. However, in the case where it is necessary to perform an operation of reversing in addition to the translation, The second embodiment (FIG. 8) having suction means will be used. Further, since the light emitting layer portion 110 or the first Au-based layer 131 is exposed on the second main surface 10b of the compound semiconductor layer 10C, the first main surface 10a is not damaged when handling. It is preferable to hold this as the lower main surface. In the wafer jig 1 of the third embodiment (FIG. 9), the light emitting layer portion 110 or the first Au-based layer 131 is exposed because it contacts the thin film wafer to be held in a point contact manner. Even when the second main surface 10b is the lower main surface and the wafer holding unit 2 is held in contact with the second main surface 10b, the generation of scratches can be suppressed as much as possible.

  Then, as shown in Step 5, the first Au-based layer 131 formed on the second main surface 10b of the compound semiconductor layer 10C is brought into close contact with the second Au-based layer 132 on the Si single crystal substrate 10S side and pressed. Then, by performing the bonding heat treatment at a temperature higher than 180 ° C. and 360 ° C. or less, for example, 200 ° C., the light emitting element 10 in a state where the electrode 130 in FIG. 10 is removed can be obtained. The compound semiconductor layer 10C is bonded to the Si single crystal substrate 10S via the first Au-based layer 131 and the second Au-based layer 132. The first Au-based layer 131 and the second Au-based layer 132 are integrated by the bonding heat treatment to form the metal layer 10M. Since both the first Au-based layer 131 and the second Au-based layer 132 are mainly composed of Au that is difficult to oxidize, the bonding heat treatment can be performed without any problem even in the atmosphere, for example. Alternatively, the metal layer 10M may be formed and bonded only to one side of the Si single crystal substrate 10S (element substrate) and the light emitting layer portion 110 (compound semiconductor layer).

  In the bonding step (step 5), the compound semiconductor layer 10C is handled and overlapped on the placed Si single crystal substrate 10S. At this time, the handling must be performed with the bonding surface (second main surface 10b side) of the compound semiconductor layer 10C exposed and the bonding surface facing downward. Therefore, in this case, the wafer jig 1 of the second embodiment (FIG. 8) is used. FIG. 12 is a conceptual diagram showing a state where the compound semiconductor layer 10 </ b> C is handled by the wafer jig 1. FIG. 12 shows a case where the first Au-based layer 131 is formed on the compound semiconductor layer 10C. In order to achieve such a state, first, the second main surface 10b is set on the upper side, the first main surface 10a is set on the lower side, and the jig for thin film wafer 1 of the second embodiment (FIG. 8) is used. The compound semiconductor layer 10C is held by scooping up from the first main surface 10a side (lower side), and then the wafer holding unit 2 is turned upside down with the compound semiconductor 10C adsorbed. Then, the compound semiconductor layer 10C is brought into close contact with the element substrate 10S via the first Au-based layer 131 and the second Au-based layer 132 with the second main surface 10b facing downward as described above. To handle.

  In contrast to this, a method of handling the Si single crystal substrate 10S and superimposing it on the placed compound semiconductor layer 10C is also conceivable, but in this case, the compound semiconductor layer 10C is damaged by the weight of the substrate 10S. This is not very desirable.

  Bonding heat treatment is performed at 180 ° C. or higher and 360 ° C. or lower while the substrate 10S and the compound semiconductor layer 10C are overlaid and pressurized.

  Then, an electrode 130 for wire bonding (bonding pad: FIG. 10) is formed so as to cover a part of the main surface 10a of the GaP current diffusion layer 120. Thereafter, the semiconductor chip is diced by an ordinary method, and this is fixed to a support and wire bonding of a lead wire is performed, followed by resin sealing to obtain a final light emitting element.

  Moreover, each layer of the light emitting layer part 110 can also be formed by an AlGaInN mixed crystal. Instead of the GaAs single crystal substrate 150, for example, a sapphire substrate (insulator) or a SiC single crystal substrate is used as a light emitting layer growth substrate for growing the light emitting layer portion 110. In the above embodiment, each layer of the light emitting layer portion 110 is in the order of the n-type cladding layer 112, the active layer 111, and the p-type cladding layer 113 from the substrate side. The clad, the active layer, and the n-type clad layer may be formed in this order.

The figure showing the semiconductor thin film wafer jig | tool (1st embodiment) which concerns on 1st invention. The figure showing the state by which the wafer was hold | maintained at the jig | tool for semiconductor thin film wafers of FIG. Diagram showing a semiconductor thin film wafer placed in a form that creates a handling space The figure showing the 1st modification of the jig for semiconductor thin film wafers concerning a 1st invention The figure showing the state by which the wafer was hold | maintained at the jig | tool for semiconductor thin film wafers of FIG. The figure showing the 2nd modification of the jig for semiconductor thin film wafers concerning a 1st invention The figure showing the state which the orientation mark part of a wafer is engaging with the engaging part of the jig | tool for semiconductor wafers of FIG. The figure showing the semiconductor thin film wafer jig | tool (2nd embodiment) which concerns on 2nd invention. The figure showing the semiconductor thin film wafer jig | tool (3rd embodiment) which concerns on 3rd invention. A diagram showing a cross-sectional structure of a bonded light emitting element The figure showing the manufacturing process of the light emitting element of bonding The figure showing the state which hold | maintained the compound semiconductor layer using the jig | tool for semiconductor thin film wafers concerning 2nd invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Jig for semiconductor thin film wafers 2 Wafer holding part 21 Holding surface 3 Grasping part 4 In-plane direction restraint part 5 Engagement part 61 Adsorption hole 7 Protrusion part 10 Light emitting element 100 Semiconductor thin film wafer

Claims (6)

It comprises a wafer holding unit that contacts and holds the lower main surface of the semiconductor thin film wafer, and a grasping unit that handles the semiconductor thin film wafer,
One end of the wafer holding part is coupled to the grasping part, and the other end is extended in a direction away from the grasping part.   The semiconductor thin film wafer is displaced on the holding surface by contacting the outer peripheral edge of the semiconductor thin film wafer, which is provided so as to be coupled to at least one of the wafer holding part and the grasping part and held by the wafer holding part. The jig for a semiconductor thin film wafer according to claim 1, further comprising an in-plane direction constraining portion that prevents the inconvenience.   An engaging portion engageable with an orientation mark portion formed by cutting out a part of the outer peripheral edge of the semiconductor thin film wafer; and on the holding surface of the wafer holding portion, the orientation mark is provided on the engagement portion. The semiconductor thin film wafer jig according to claim 1 or 2, wherein the semiconductor thin film wafer is held in an aligned state by engaging a portion.   A suction hole having an opening on a holding surface of the wafer holding unit; and suction means communicating with the suction hole, and the semiconductor thin film wafer is removed from the wafer holding part by reducing the pressure inside the suction hole by the suction means. 4. The semiconductor thin film wafer jig according to claim 1, wherein the jig is held by being attracted to a holding surface.   2. The wafer holding unit has a protrusion on a holding surface, and holds the semiconductor thin film wafer in a state in which the protrusion contacts the lower main surface in a point contact form. 4. The semiconductor thin film wafer jig according to any one of items 3 to 3. 6. The semiconductor thin film wafer jig according to claim 5, wherein the protrusion is made of silicon rubber.

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