KR20070043296A - Method of producing light emitting diode having vertical structure - Google Patents

Abstract

The present invention discloses a method for manufacturing a vertical structure light emitting diode, which is an improved process for removing a sapphire substrate, which is a key step in manufacturing a vertical structure light emitting diode. In the present invention, in order to minimize the damage of the epitaxial layer generated in the process of removing the sapphire substrate from the epitaxial layer, the sapphire removal process is divided into two steps of polishing, etching, and laser irradiation. First, by processing the sapphire substrate thinly to a predetermined thickness using polishing and etching, the etching solution is prevented from directly contacting the epitaxial layer, thereby increasing the roughness of the epitaxial layer and the generation of pinholes in advance. Subsequently, when the laser is irradiated to the sapphire substrate thinly processed to a predetermined thickness, the sapphire layer is separated separately without stress and damage to the surrounding light emitting diode elements, wherein the sapphire substrate using a conventional laser Since the separation occurs in a thinner state than, the stress generated during separation can be reduced to prevent the deterioration of the epitaxial layer.

Light Emitting Diode, Vertical Structure, Polishing, Etching, Laser

Description

Vertical structure light emitting diode manufacturing method {METHOD OF PRODUCING LIGHT EMITTING DIODE HAVING VERTICAL STRUCTURE}

1 is a cross-sectional view of a conventional horizontal structure light emitting diode.

2 is a cross-sectional view of a conventional vertical structure light emitting diode.

3A to 3F are process drawings of a conventional vertical structure light emitting diode manufacturing method.

4A to 4O are process diagrams of a method of manufacturing a vertical light emitting diode according to a first embodiment of the present invention.

5A to 5H are flowcharts of a method of manufacturing a vertical light emitting diode according to a second embodiment of the present invention.

6A to 6K are flowcharts illustrating a method of manufacturing a vertical light emitting diode according to a third embodiment of the present invention.

The present invention relates to a light emitting diode and a method of manufacturing the light emitting diode. In particular, the present invention relates to an improved method of manufacturing a vertical structure light emitting diode and a light emitting diode produced by the method.

Light emitting diodes are known semiconductor devices in which electrons and holes combine to convert current into light. The color of light emitted by the light emitting diode depends on the semiconductor material used for the light emitting diode. This is because the impulse of the emitted light is determined by the bandgap representing the difference in energy between the electrons in the valence band and the electrons in the conduction band, where low energy and long wavelength photons are generated in the small bandgap and high energy in the large bandgap. And photons of short wavelength are generated.

In the case of using a nitride-based light emitting material as a thin film structure of a light emitting diode, sapphire having a similar lattice constant and crystal structure is used as a base substrate to reduce crystal defects during epitaxial growth.

1 is a cross-sectional view showing an example of a conventional horizontal structure light emitting diode. The light emitting diode shown in FIG. 1 is a horizontal structure GaN light emitting diode, and the GaN light emitting diode 100 includes a sapphire substrate 110 and a GaN light emitting structure 150 formed on the sapphire substrate 110.

The GaN light emitting structure 150 includes an n-type GaN cladding layer 152 sequentially formed on the sapphire substrate 110, an active layer 154 having a multi-quantum well structure, and a p-type GaN cladding layer 156. It is composed of Since the light emitting structure 150 is grown using a known process such as metal organic chemical vapor deposition (MOCVD), liquid phase epitaxial method (LPE), molecular beam epitaxial method (MBE), the light emitting structure layer 150 is epitaxial. Also called the tactical layer. In this case, before the n-type GaN cladding layer 152 is grown, a buffer layer (not shown) made of AlN / GaN may be formed to improve lattice matching with the sapphire substrate 110.

The p-type cladding 156 and the active layer 154 corresponding to the predetermined region are dry-etched to expose a portion of the top surface of the n-type GaN cladding layer 152, and the exposed n-type electrode 190 and the p-type electrode 170 ). In general, the transparent electrode 160 may be formed before the p-type electrode 170 is formed on the upper surface of the p-type cladding layer 156 while increasing the current injection area so as not to adversely affect the luminance.

However, since the GaN light emitting diode 100 having such a structure uses the sapphire substrate 110 as an insulating material, the current flow from the n-type electrode 190 to the p-type electrode 170 through the active layer 154 is horizontal. It must be formed narrowly along the direction. Due to such a narrow current flow, the forward voltage of the light emitting diode 100 is increased to decrease the current efficiency, and due to the nature of the insulating material, it is difficult to discharge static electricity flowing from the outside, which may cause a defect due to static electricity.

In addition, despite the large amount of heat generated by the increase of the current density, the heat emission is not smooth due to the low thermal conductivity of the sapphire substrate 110, so that the heat increases between the sapphire substrate 110 and the GaN light emitting structure 150. Mechanical stress may occur and the device may become unstable, and there is a restriction on applying a large current for high power.

Furthermore, in order to form the n-type electrode 190, a portion of the active layer 154 needs to be removed at least larger than the area of the electrode 190 to be formed, so that the emission area is reduced and the luminous efficiency according to the device size vs. the luminance is reduced. There is a problem. In addition, since both the n-type electrode 190 and the p-type electrode 170 are formed on the light emitting diode, it is difficult to reduce the chip area of the light emitting diode, thereby limiting the amount of chips produced per wafer.

2 is a cross-sectional view showing an example of a vertical structure light emitting diode designed to solve the disadvantage of the horizontal structure diode.

The light emitting diode shown in FIG. 2 is a vertical structure GaN light emitting diode, and the GaN light emitting diode 200 includes a light emitting structure including a p-type GaN cladding layer 252, an active layer 254, and an n-type cladding layer 256. 250) layer, ie, an epitaxial layer.

As shown in FIG. 2, since the vertical structure light emitting diode 200 uses a conductive substrate such as the silicon substrate 220, the vertical structure light emitting diode 200 has a structure in which upper and lower portions of the diode 200 may be electrically connected to each other. As a result, the heat dissipation effect of the diode 200 may be improved, and since the current flow is formed through a larger area than the horizontal structure light emitting diode, the forward voltage may be reduced, and the antistatic effect may be improved, and at the same time, a large current High power can be obtained by applying.

In addition, in terms of the process, since the current density distribution can be sufficiently improved, a process of forming a transparent electrode is not required, and since a solid sapphire substrate is removed, the process of cutting into individual device units can be simplified. In addition, unlike a horizontal light emitting diode, since a process of etching part of the active layer is not required, a wide light emitting area can be secured to improve luminance and the chip area of a unit light emitting diode can be reduced to increase chip production per wafer. You can.

3A to 3F are diagrams illustrating stages of a conventional manufacturing process for manufacturing the vertical structure light emitting diode of FIG. 2.

In the step of FIG. 3A, the light emitting structure 350, that is, the epitaxial layer, formed of the GaN single crystal layer is formed on the sapphire substrate 310. In the step of FIG. 3B, the formed light emitting structure 350 is separated into the size of a unit light emitting diode. In the step of FIG. 3C, a conductive substrate 310, such as a silicon substrate, is bonded to the upper surface of the separated light emitting structure 350 using the conductive adhesive layer 340.

In the step of FIG. 3D or 3D1, the sapphire substrate 310 is removed. In order to remove the sapphire substrate, a method of separating the sapphire substrate 310 from the light emitting structure 350 using a laser beam (FIG. 3D), or removing the sapphire substrate 310 by a mechanical polishing, wet or dry etching method. (FIG. 3D1) is used.

In the step of FIG. 3E, electrodes 370 and 390 are formed on both surfaces of the resultant. Finally, in the step of FIG. 3F, the result of the step of FIG. 3E is cut into the size of the individual light emitting diodes, that is, the size of the separated light emitting structure 350, thereby producing a final vertical structure light emitting diode.

Although the sapphire substrate 310 is necessary for the growth of the epitaxial layer 350, but is inadequate as an accommodating substrate for the light emitting diode due to its insulating material, the sapphire substrate 310 is removed and the conductive substrate 320 is attached.

Referring to FIG. 3D, when the sapphire substrate 310 is separated using a laser among the methods of removing the sapphire substrate, the sapphire substrate may be temporarily irradiated with a laser on the entire surface of the wafer on which the plurality of light emitting diode structures 350 are formed. Since 310 is not removed but is irradiated by moving a small area of a predetermined size determined by the size and shape of the focus of the laser light, a large stress is generated at the boundary of the laser irradiation range.

3D1, in the method of removing the sapphire substrate using polishing and etching, the sapphire substrate 310 and the epitaxial layer of the etching solution used for etching the sapphire substrate, that is, the GaN light emitting structure layer ( Since the selectivity for the substrate 350 is poor, not only an epitaxial layer having a uniform thickness can be obtained, but also the roughness of the surface of the epitaxial layer is increased and pinholes are generated as a result of etching.

In the conventional method of removing a sapphire substrate, the epitaxial layer 350 is deteriorated due to stress or surface damage and pinhole generation applied to the epitaxial layer 350, which in turn lowers luminous efficiency and ultimately degrades performance. It is the main cause of getting.

Vertical structure light emitting diodes have many advantages over horizontal structure light emitting diodes, but the above-mentioned problems occurring in the sapphire substrate removal step, which are essential for the manufacturing process, have not been solved yet.

SUMMARY OF THE INVENTION The present invention is directed to a method for manufacturing a vertical structure light emitting diode including an effective sapphire removing process capable of minimizing degradation of the epitaxial layer, and an improved vertical structure light emitting diode manufactured by the method. To provide that purpose. More specifically, the present invention is a step of removing the sapphire substrate 310 without deterioration of the epitaxial layer 350 after bonding the sapphire substrate 310 and the conductive receiving substrate 320 in the manufacturing process of the vertical structure light emitting diode. The purpose is to provide.

In the vertical structure light emitting diode manufacturing method according to the first aspect of the present invention for achieving the above object, forming a light emitting structure layer on an element substrate, providing a receiving substrate, the light emitting structure layer and the receiving substrate Bonding a semiconductor substrate, reducing the thickness by processing the device substrate, etching a structure on the receiving substrate including the device substrate and the light emitting structure layer to a unit device size, and generating a unit device; and Irradiating a residual device substrate attached to the device with a laser to separate from the unit device.

In the vertical structure light emitting diode manufacturing method according to the second aspect of the present invention, forming a light emitting structure layer on the device substrate, forming a reflective layer on the light emitting structure layer, forming an adhesive layer on the reflective layer, Etching the structure layer, the reflective layer, and the adhesive layer on the device substrate to a unit device size, providing a receiving substrate, bonding the light emitting structure layer and the receiving substrate through the adhesive layer, and forming the device substrate. Processing to reduce the thickness, irradiating the device substrate with reduced thickness with a laser to separate from the light emitting structure layer, processing the back surface of the receiving substrate to reduce the thickness, respectively on both sides of the receiving substrate Forming an electrode; And separating the receiving substrate by the unit element size.

In the method of manufacturing a vertical structure light emitting diode according to the third aspect of the present invention, forming a light emitting structure layer on an element substrate, and etching and separating the structure on the receiving substrate including the light emitting structure layer by a unit element size. Providing a conductive receiving substrate having a pattern for isolating individual devices to a predetermined depth, bonding the light emitting structure layer to the conductive receiving substrate, and processing the device substrate to reduce thickness; Separating the device substrate from the light emitting structure layer, forming an electrode on the light emitting structure separated into unit device sizes, fixing the unit devices by fixing means, and forming a back surface of the conductive receiving substrate. Processing to reveal the pattern, wherein the back of the conductive receiving substrate Forming a pole, and from said holding means, characterized in that it comprises the step of separating the unit elements.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention through the preferred embodiment of the present invention.

<First Embodiment>

4A to 4O are diagrams for describing a process of a method of manufacturing a vertical structure light emitting diode according to a first embodiment of the present invention.

First, as shown in FIG. 4A, the light emitting structure layer 420 is formed on an element substrate 410 such as a sapphire substrate. An n-type GaN cladding layer, an active layer, and a p-type GaN cladding layer are sequentially epitaxially grown on the sapphire substrate 410 to form a GaN light emitting structure layer 420 that is an epitaxial layer. When the sapphire substrate on which the light emitting structure layer 420 is formed is provided in advance, the light emitting structure layer 420 forming step as described above may be omitted in the light emitting diode manufacturing process.

Meanwhile, in order to improve lattice matching between the sapphire substrate 410 and the epitaxial layer 420, a buffer layer (not shown) made of AlN / GaN may be selectively formed, and the active layer in the GaN light emitting structure 420 may be formed. A reflective layer 430 may be selectively formed to reflect light emitted from the light. The reflective layer may be formed of Ni, Al, Ag, Au, Pt, or an alloy thereof. In addition, various kinds of materials used as reflective layers in the art may be used. It is preferable to include the reflective layer 430 as in the present embodiment when manufacturing the vertical light emitting diode, but since the material constituting the conductive adhesive layer 442 is generally made of metal or alloy and has a relatively high reflectivity, a separate reflective layer Even if 430 is not formed, a certain degree of brightness enhancement effect can be expected.

Subsequently, a conductive adhesive layer 442 is formed to facilitate bonding of the accommodating substrate such as a silicon substrate to the element substrate. Silicon substrates are generally used for vertical light emitting diodes, but Ge, SiC, ZnO, diamond, GaAs, and the like may be used unless they are an insulating substrate such as sapphire. The conductive adhesive layer 442 may be formed of an adhesive pad, and the adhesive pad should be an electrically conductive material having adhesiveness. The conductive material is preferably a metal bonding material using gold (Au), and Au-Sn, Sn, In, Au-Ag, Ag-Ge, Ag-Cu, and Pb-Sn may be used.

Meanwhile, as shown in FIG. 4B, in the case of the receiving substrate, an adhesive layer 444 is formed on the receiving substrate 450 formed of silicon single crystal. The material and shape of the adhesive layer 444 on the receiving substrate 450 is the same as that of the adhesive layer 442 on the device substrate 410.

The steps of FIG. 4A and the steps of FIG. 4B are independent of the order and may be performed simultaneously. In addition, when the bonding of the device substrate 410 and the receiving substrate 450 using only one adhesive layer, forming the adhesive layer 442 on the device substrate 410 and the adhesive layer 444 on the receiving substrate 450 One of the steps of forming a can be omitted.

Next, as shown in FIG. 4C, the adhesive layers 442 on the element substrate 410 and the adhesive layers 444 on the silicon receiving substrate 450 face each other to bond the two substrates by using a thermocompression bonding method. The two adhesive layers are effectively one adhesive layer 440 due to thermocompression.

Subsequently, in FIG. 4D, the device substrate, such as the sapphire substrate 410, is polished by using grinding and etching. Preferably it is processed to thickness within 50 micrometers. By leaving the sapphire substrate thin in this manner, the etching solution avoids direct contact with the epitaxial layer 420. Thus, the roughness of the epitaxial layer generated in the conventional method of removing all the sapphire substrates by polishing and etching, Pinhole generation can be prevented. Polishing may use, for example, chemical physical polishing (CMP), and etching may include dry etching using reactive ion etching (RIE), inductively coupled plasma / reactive ion etching (ICP / RIE), and the like. Wet etching using potassium, sodium hydroxide, sulfuric acid, phosphoric acid or a mixture thereof as an etchant may be used.

Next, in FIG. 4E to FIG. 4K, the photolithography process using the oxide film as a mask is performed to separate the LEDs.

First, in FIG. 4E, a material capable of resisting etching, such as an oxide film 460 or a nitride film, is deposited on the sapphire substrate 410, and then a photosensitive agent 470 is applied.

The photoresist 470 is patterned to the size of a unit device in FIG. 4F, and then the oxide film 460 is etched and patterned in FIG. 4G, and the photoresist 470 is removed in FIG. 4H. Subsequently, the sapphire layer 410 and the epitaxial layer 420 are dry or wet-etched using the oxide film 460 as a mask in step 4i. Next, the reflective layer 430 and the adhesive layer 440 are etched in FIG. 4J, and the oxide layer 460 is removed by dry or wet etching in FIG. 4K.

Next, in step 4l, the sapphire layer 410 is removed using a laser. Since the sapphire layer 410 is thinly separated through a pre-polishing and etching process, the sapphire layer 410 is removed to a unit device size without stress or other damage to the light emitting diode device including the epitaxial layer 420. can do. In this case, the laser irradiation irradiates a plurality of unit devices at the same time, but controls the interface of the laser to be in the space between the unit elements, so that the stress caused by the laser irradiation on the unit device is minimized.

Subsequently, the n-type electrode 480 is formed on the light emitting diode in FIG. 4M, and the silicon substrate 450 is polished and thinned in FIG. 4N, and then the p-type electrode 490 is deposited. Finally, in step 4o, the silicon substrate 450 is cut to a unit device size.

Second Embodiment

5A to 5H are views for explaining the process of the manufacturing method of the vertical structure light emitting diode according to the second embodiment of the present invention.

First, as shown in FIG. 5A, a light emitting structure layer 520, an optional buffer layer (not shown), an optional reflective layer 530, and an optional conductive adhesive layer 542 are formed on an element substrate 510 such as a sapphire substrate. . Instead of this step, a substrate on which the structure layer is formed may be provided.

Next, the light emitting structure layer 520, the reflective layer 530, and the conductive adhesive layer 542 epitaxially grown through the photolithography process are separated in units of individual LEDs in FIG. 5B.

Meanwhile, as shown in FIG. 5C, an optional adhesive layer 544 is formed on the receiving substrate 550 formed of silicon single crystal, and the adhesive layer 542 on the element substrate and the adhesive layer 544 on the silicon receiving substrate 550 are The two substrates are bonded to each other using a thermocompression bonding method so as to face each other. When the device substrate 510 and the receiving substrate 550 are bonded by only one adhesive layer, forming the adhesive layer 542 on the device substrate 510 and forming the adhesive layer 544 on the receiving substrate 550. One of the steps may be omitted.

Next, the sapphire substrate 510 is several tens of micrometers by using polishing and etching in FIG. 5D. Preferably, the sapphire layer 510 is removed using a laser in a thickness of 50 μm or less in step 5e. Since the sapphire layer 510 is thinly processed through a pre-polishing and etching process, the sapphire layer 510 is cleaned to the unit device size without stress or other damage to the light emitting diode device including the epitaxial layer 520. Can be separated.

Subsequently, in step 5f, the adhesive layer 544 is removed by wet etching, or the like, and the silicon substrate 550 is polished and thinned in step 5g, and electrodes 580 and 590 are formed on upper and lower surfaces of the light emitting diodes, respectively. Finally, in step 5h, the silicon receiving substrate 550 on which the electrode is formed is cut to a unit device size.

Third Embodiment

6A to 6H are views for explaining the process of the manufacturing method of the vertical structure light emitting diode according to the third embodiment of the present invention. The third embodiment includes forming a pattern on a silicon substrate to facilitate separation of the light emitting diode elements into individual units.

First, as shown in FIG. 6A, a light emitting structure layer 620, an optional buffer layer (not shown), an optional reflective layer 630, and an optional conductive adhesive layer 642 are formed on an element substrate 610 such as a sapphire substrate. . Instead of this step, the substrate on which the structure layer is formed may be provided as in other embodiments.

Next, the light emitting structure layer 620, the reflective layer 630, and the conductive adhesive layer 642 epitaxially grown through the photolithography process may be separated into individual light emitting diode device units in FIG. 6B.

Meanwhile, in the case of the accommodating substrate 650 formed of silicon single crystal, as shown in FIG. 6C, a pattern for isolating individual elements is etched to a predetermined depth by using a dry etching method. In this step, the conductive adhesive layer 644 may be formed on the surface of the receiving substrate 650 on which the pattern is formed.

As shown in FIG. 6D, the adhesive layers 642 on the element substrate and the adhesive layers 642 on the silicon receiving substrate 650 face each other to bond the two substrates using a thermocompression bonding method.

Next, the sapphire substrate 610 is several tens of micrometers by using grinding and etching in FIG. 6E. Preferably, it is processed to a thickness within 50 μm, the sapphire layer 610 is separated using a laser in FIG. 6F, the electrode 680 is formed on the light emitting structure 620 in FIG. 6G, and FIG. 6H. A fixing tape 670, such as a UV tape or a dicing tape, is adhered to fix the devices in the step.

Subsequently, when the backside of the conductive receiving substrate 650 is processed by grinding and etching in FIG. 6H, a pattern for isolating the device is revealed in FIG. 6I, and the structure on the receiving substrate 650 is completely isolated or separated. do. An electrode 690 is formed on the receiving substrate 650 exposed in FIG. 6J, and finally, the light emitting diode device is separated from the fixing tape 680 in FIG. 6K.

In the present invention, in order to minimize the damage of the epitaxial layer generated in the process of removing the sapphire substrate from the epitaxial layer, the sapphire removal process is divided into two steps of polishing, etching, and laser irradiation.

First, by processing the sapphire substrate thinly to a predetermined thickness using polishing and etching, the etching solution is prevented from directly contacting the epitaxial layer, thereby increasing the roughness of the epitaxial layer and the generation of pinholes in advance.

Subsequently, when the laser is irradiated to the sapphire substrate thinly processed to a predetermined thickness, the sapphire layer is separated separately without stress and damage to the surrounding light emitting diode elements, wherein the sapphire substrate using a conventional laser Since the separation occurs in a thinner state, the stress generated during separation can be reduced to prevent deterioration of the epitaxial layer.

By using the process of the present invention, it is possible to prevent the non-uniformity of the epitaxial layer thickness, the increase of the surface roughness, and the generation of the pinhole generated in the sapphire removal process using the conventional polishing and etching, and the laser irradiation generated in the conventional laser process Damage and stress of the epitaxial layer around the area can be reduced.

According to the present invention, the degradation and stress of the epitaxial layer are minimized, thereby improving the light emitting efficiency and performance of the diode and improving the reliability of the device.

Although the present invention has been described in detail by way of example embodiments, it will be apparent to those skilled in the art that various changes and modifications of the embodiments can be made within the spirit and scope of the present invention, and such modifications and variations are also included in the appended claims. Belonging is natural. For example, the method of removing the sapphire substrate of the present invention may be equally or similarly applied to various manufacturing processes involving separating an insulating substrate, such as a sapphire substrate, from an epitaxial layer, in addition to a light emitting diode.

Claims (27)

Providing a device substrate on which a light emitting structure layer is formed; Providing a receiving substrate; Bonding the light emitting structure layer to the receiving substrate; Processing the device substrate to reduce thickness; Generating a unit device by etching a structure on the receiving substrate including the device substrate and the light emitting structure layer to a unit device size; And And irradiating a residual device substrate attached to the unit device with a laser to separate the unit device from the unit device. The method of claim 1, And after forming the device substrate on which the light emitting structure layer is formed, forming a reflective layer on the light emitting structure layer. The method of claim 1, And forming an electrode on an upper surface and a lower surface of the unit device from which the residual device substrate is separated. The method of claim 1, The step of bonding the light emitting structure layer and the receiving substrate is a step of bonding the light emitting structure layer and the receiving substrate by providing a conductive adhesive layer on the light emitting structure layer and / or the receiving substrate manufacturing a vertical structure light emitting diode Way. The method of claim 4, wherein And bonding the light emitting structure layer and the receiving substrate to each other by bonding the conductive adhesive layer by thermocompression bonding. The method of claim 1, The step of reducing the thickness by processing the device substrate is a method of manufacturing a vertical structure light emitting diode, characterized in that for processing the device substrate to several tens of ㎛, preferably 50㎛ or less. The method of claim 1, The step of reducing the thickness by processing the device substrate is a method of manufacturing a vertical structure light emitting diode, characterized in that for removing the device substrate by a method of polishing and / or etching. The method of claim 7, wherein The step of reducing the thickness by processing the device substrate is a vertical structure light emitting diode, characterized in that for polishing and / or etching the device substrate to a thickness that can prevent the etching solution for the etching process to contact the light emitting structure layer Manufacturing method. The method of claim 1, The unit device generation step, Depositing an oxide film on the device substrate; Applying a photosensitizer; Patterning the photoresist to the size of the unit element; Etching and patterning the oxide film; Removing the photoresist; And etching the device substrate and the oxide structure layer to the size of the unit device by using the oxide film as a mask. The method of claim 1, The laser irradiation step irradiates a plurality of the unit devices at the same time, the vertical structure light emitting diode manufacturing method, characterized in that the interface of the laser lies in the space between the unit devices. The method of claim 1, The laser irradiation step is a vertical structure light emitting diode manufacturing method, characterized in that for irradiating the laser so that the stress does not substantially occur in the light emitting structure layer. The method of claim 3, wherein The electrode forming step, Forming an electrode on an upper surface of the unit device in which the residual device substrate is separated; Reducing the thickness by processing the back side of the receiving substrate; Forming an electrode on the back side of the receiving substrate; And And separating the receiving substrate by the unit device size. The method of claim 1, Wherein the device substrate is a sapphire substrate. A vertical structure light emitting diode manufactured by the method according to any one of claims 1 to 13. In the method of removing the sapphire substrate on which the epitaxial layer is grown from the epitaxial layer, Polishing and / or etching the epitaxial layer to reduce the thickness of the epitaxial layer; And And irradiating a laser on the epitaxial layer having the reduced thickness. Providing a device substrate on which a light emitting structure layer is formed; Forming a reflective layer on the light emitting structure layer; Forming an adhesive layer on the reflective layer; Etching the structure layer, the reflective layer, and the adhesive layer on the device substrate to a unit device size; Providing a receiving substrate; Bonding the light emitting structure layer to the receiving substrate through the adhesive layer; Processing the device substrate to reduce thickness; Irradiating the device substrate having a reduced thickness with a laser to separate from the light emitting structure layer; Reducing the thickness by processing the back side of the receiving substrate; Forming electrodes on both sides of the receiving substrate; And And separating the receiving substrate by the unit device size. The method of claim 16, The step of bonding the light emitting structure layer and the receiving substrate through an adhesive layer may include forming a separate adhesive layer on the receiving substrate, and bonding the adhesive layer on the reflective layer and the adhesive layer on the receiving substrate by a thermocompression method. A vertical structure light emitting diode manufacturing method, characterized in that. The method of claim 16, The step of reducing the thickness by processing the device substrate is a method of manufacturing a vertical structure light emitting diode, characterized in that for processing the device substrate to a few tens of ㎛, preferably 50 ㎛ or less by the method of polishing and / or etching. 19. A vertical structure light emitting diode produced by the method of any of claims 16-18. A vertical structure light emitting diode manufactured by the method according to claim 15. Providing a device substrate on which a light emitting structure layer is formed; Etching and separating the structure on the receiving substrate including the light emitting structure layer to a unit device size; Providing a conductive receiving substrate having a predetermined depth to form a pattern for isolating individual devices; Bonding the light emitting structure layer to the conductive receiving substrate; Processing the device substrate to reduce thickness; Separating the device substrate from the light emitting structure layer using a laser; Forming an electrode on the light emitting structure separated into unit device sizes; Fixing the unit elements with fixing means; Processing the back surface of the conductive receiving substrate to isolate the unit devices; Forming an electrode on a rear surface of the conductive receiving substrate; And separating the unit elements from the fixing means. The method of claim 21, The bonding of the light emitting structure layer and the conductive receiving substrate may include providing a conductive adhesive layer to the light emitting structure layer and the conductive receiving substrate, respectively, and bonding the two conductive adhesive layers by thermocompression bonding. Manufacturing method. The method of claim 21, The step of reducing the thickness by processing the device substrate is a method of manufacturing a vertical structure light emitting diode, characterized in that for processing the device substrate by a method of polishing and / or etching to several tens of ㎛, preferably 50 ㎛ or less. The method of claim 21, And said fixing means is a tape. The method of claim 21, Wherein the device substrate is a sapphire substrate. A vertical structure light emitting diode manufactured by the method according to any one of claims 21 to 25. Laser diode produced by the method according to claim 15.

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