JP2005268609A - Multilayer lamination multi-pixel imaging element and television camera - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging element which has high sensitivity and high resolution, generates no shading has high photoelectric conversion efficiency, and is excellent in stability when repeatedy used. <P>SOLUTION: In a multilayer lamination multi-pixel imaging element, the imaging element has a pixel unit which is constituted at least of: a plurality of electromagnetic wave absorption layers which absorb electromagnetic waves of different wavelength and perform photoelectric conversion; a pair of electrodes by which each of the electromagnetic wave absorption layers is pinched; a charge transmission/charge read-out portion; and a plurality of contact part positions which link at least one of a pair of the electrodes and the charge transmission/charge read-out portion. Out of the electrodes which were arranged in the pixel unit, length between the outermost surfaces of the electrodes of both of outermost sides is smaller than a pixel size. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a multilayer stacked multi-pixel imaging device used for digital cameras, color television imaging, and the like. In particular, the present invention relates to a multi-layered multi-pixel imaging device with high sensitivity and high pixel count.

  Since the introduction of the market for electronic still cameras in 1982, especially since the appearance of digital cameras in 1995, the competition for development of image sensors for still images has been promoted by manufacturers. The main theme of development is to increase the number of pixels by miniaturization of pixels. In the 21st century, an image sensor with a pixel size of 3 μm has also been realized (see Non-Patent Document 1, page 16).

  A conceptual diagram of a conventional color image sensor is described in “FIG. 7” of Patent Document 3. In the single plate system shown in this figure, the sensitivity is lowered because part of the light is absorbed by the color filter. For example, by passing through a red filter, blue and green are lost in the color filter, and only a maximum of 1/3 of the light is used. As for pixel miniaturization, miniaturization corresponds to reducing the area of the color filter 701 in the same figure, and is in a contradictory relationship with sensitivity. Therefore, in the single plate method, it is difficult in principle to achieve both pixel miniaturization and necessary sensitivity.

The technical concept of the multilayer stacked multi-pixel image sensor has been proposed for a long time as disclosed in Patent Document 1. The stacked type eliminates the need for color filters with light loss, eliminates the need for complicated processes such as microlenses, and increases the light utilization area ratio of each color. Although the merit of becoming a means to overcome the conflicting relationship was well recognized, it did not involve the development of technology to materialize it.
After that, the idea of the multilayer stack type is a method commonly called the Foveon method in which color separation is performed in the depth direction by a stacked light receiving section using the wavelength dependence of the absorption coefficient of Si as disclosed in Patent Document 2. Embodied by. However, in the invention disclosed in Patent Document 2, the sensitivity and the color separation are in a trade-off relationship, and either one is unsatisfactory.

As a form in which the color separation property of this method is improved, Patent Document 3 discloses a method in which an organic semiconductor light receiving portion and an inorganic semiconductor photosensitive layer on a Si substrate are used in combination. That is, in FIG. 1 of the specification of Patent Document 3, green light is received by the first light receiving unit, and blue light is received by the second light receiving unit after passing through the first light receiving unit, and red light is received. An image sensor having a configuration in which light is received by a third light receiving unit after passing through the first and second light receiving units is disclosed.
Further, Patent Document 4 also discloses a multilayer stacked multi-pixel imaging device in which multilayer organic semiconductor molecular film type light-receiving elements that absorb different color lights are stacked on a Si substrate.

However, a laminated multi-pixel imaging device constructed by arranging on a substrate a pixel in which an electromagnetic wave absorption / photoelectric conversion part, a charge transfer / reading part, and a light receiving element composed of a plurality of contact parts connecting both parts are arranged on the substrate. However, although it is superior to the single plate method in which pixels that are not stacked are arranged in terms of sensitivity, there is still a demand for higher sensitivity. In addition, color separation is inferior and resolution tends to be unsatisfactory compared to a single plate system in which color light is separated by an optical filter. Further, because of the laminated structure, shading is likely to occur.
As the number of pixels increases in order to obtain fine images, the pixel size becomes smaller and the sensitivity becomes lower, so even higher sensitivity can be achieved even in a stacked multi-pixel imaging device that is advantageous for higher sensitivity. There is a demand for improvement in the deterioration of the image quality due to the lamination.

The above-mentioned prior art and knowledge relating to the present invention include the following documents.
JP 58-103165 A US Pat. No. 5,965,875 JP 2003-332551 A Japanese Patent No. 3315213 Kazuya Yonemoto, Basics and Applications of CCD / CMOS Image Sensor, Published by CQ Publisher

The present invention has been made on the basis of the above-mentioned background. Therefore, an object of the present invention is to provide an image sensor having high sensitivity, high resolution, and no shading.
A further object of the present invention is to provide an imaging device having high photoelectric conversion efficiency and excellent stability during repeated use.

In order to solve the above-mentioned problems, the present invention provides a multilayer stacked multi-pixel imaging device including a multilayer electromagnetic wave absorption / photoelectric conversion part, a charge transfer / charge reading part, and a plurality of contact parts connecting both parts. On the other hand, it was achieved by reducing the thickness of the multilayer electromagnetic wave absorption / photoelectric conversion site. That is, the present invention has the following configuration.
(1) A plurality of electromagnetic wave absorption layers capable of absorbing and electromagnetically converting electromagnetic waves of different wavelengths, a pair of electrodes sandwiching each electromagnetic wave absorption layer, a charge transmission / charge readout portion, and at least one of the pair of electrodes An image pickup device having a pixel unit composed of at least a plurality of contact parts connecting to a charge readout part, and having a pixel size (a circle having the same area as an electromagnetic wave absorption layer that gives a maximum area among multilayer electromagnetic wave absorption layers) A multilayer stacked multi-pixel imaging device characterized in that the length between the outermost surfaces of both outermost electrodes among the electrodes of the pixel unit is smaller than the equivalent diameter).

(2) At least one of the plurality of electromagnetic wave absorbing layers absorbs any one of blue light, green light, red light, ultraviolet light, infrared light, X-rays, and γ rays, and performs photoelectric conversion. The multilayer laminated multi-pixel imaging device as described in (1) above,
(3) The plurality of electromagnetic wave absorbing layers have at least three electromagnetic wave absorbing layers, and the three layers absorb 400 to 500 nm of blue light, 500 to 600 nm of green light, and 600 to 700 nm of red light, respectively. The multilayer stacked multi-pixel image pickup device according to (1), wherein conversion is performed.
(4) The multilayer stacked multi-pixel imaging as described in any one of (1) to (3) above, wherein the charge transfer / charge reading portion is a semiconductor having a charge mobility of 100 cm ² / volt · sec or more. element.
(5) The multilayer stacked multi-pixel imaging element as described in any one of (1) to (4) above, wherein the charge transfer / charge reading portion has a CMOS structure or a CCD structure.

(6) The multilayer stacked multi-pixel imaging device as described in any one of (1) to (5) above, wherein the plurality of contact parts are made of a metal material.
(7) The plurality of contact portions connect at least three of the blue light extraction electrode and the charge transfer / readout portion, the green light extraction electrode and the charge transfer / readout portion, and the red light extraction electrode and the charge transfer / readout portion, respectively. The multilayer laminated multi-pixel imaging device according to any one of (1) to (6), wherein the multilayer laminated multi-pixel imaging device includes one contact portion.
(8) The multilayer stacked multi-pixel imaging device according to any one of (1) to (7), wherein the pixel size is 2 to 20 μm.
(9) The multilayer stacked multi-pixel image sensor according to any one of (1) to (8), wherein the number of pixels of the image sensor is 1 to 100 M pixels.

(10) A plurality of electromagnetic wave absorption layers absorb 40% or more of incident visible light of 400 to 700 nm as a whole, and perform photoelectric conversion, according to any one of (1) to (9) above Multilayer image sensor with multiple layers.
(11) The multilayer stacked multi-pixel imaging device according to any one of (1) to (10), wherein an aperture ratio of an electromagnetic wave absorption layer having the maximum aperture ratio among the plurality of electromagnetic wave absorption layers is 70% or more.
(12) The electromagnetic wave absorbing layer includes at least four electromagnetic wave absorbing layers that absorb at least blue light, blue green light, green light, and red light. The multilayer laminated multi-pixel imaging device described.
(13) The electromagnetic wave absorbing layer for absorbing blue light, the electromagnetic wave absorbing layer for absorbing green light, and the electromagnetic wave absorbing layer for absorbing red light are made up of two or more electromagnetic wave absorbing layers. The multilayer laminated multi-pixel imaging device as described in any one of (1) to (12) above.
(14) The multilayer stacked multi-pixel imaging device as described in any one of (1) to (13) above, wherein at least one electromagnetic wave absorbing layer has an organic compound film.
(15) The multilayer stacked multi-pixel imaging device as described in (14) above, wherein at least one electromagnetic wave absorbing layer has a plurality of organic compound films.
(16) The multilayer laminated multi-pixel imaging device as described in any one of (1) to (15) above, wherein the at least one electromagnetic wave absorbing layer contains an oxide or a chalcogenide semiconductor and a spectral sensitizing dye.
(17) The multilayer multi-pixel according to any one of (1) to (16) above, wherein the at least one electromagnetic wave absorbing layer contains inorganic compound particles, an inorganic compound thin film, or a composite thereof. Image sensor.

(18) A broadcast television camera using the imaging device according to any one of (1) to (17).
(19) The broadcast television camera according to (18), wherein an optical low-pass filter is not used.
(20) The broadcast television camera according to (18) or (19), wherein the image sensor is replaceable.
(21) The broadcast television camera according to any one of (18) to (20), wherein the broadcast television camera is for high-definition broadcasting.
(22) A digital camera using the imaging device according to any one of (1) to (17).

The feature of the present invention is that the multilayer thickness (exactly the length between the outermost surfaces of the electrodes on the outermost sides in the plurality of electrodes of the pixel unit) despite the lamination of the multilayer electromagnetic wave absorption / photoelectric conversion sites. ) Is made thinner than the pixel size, and by realizing such a thickness condition, it has been found that an image pickup device having high sensitivity, high resolution, and no shading can be realized even if the pixel density is high. .
In addition, even when the pixel density is increased, high photoelectric conversion efficiency is maintained, and an imaging device having excellent stability during repeated use can be realized.
Therefore, the superiority of the present invention becomes remarkable as the pixels become dense and small in size, and if the pixel size is 2 to 20 microns, it is more preferable as an imaging device with high sensitivity, high resolution, and no shading. . Further, if the pixel size is within this range, it is more preferable as an imaging device having high photoelectric conversion efficiency and excellent stability during repeated use.

  The multilayer laminated multi-pixel image sensor of the present invention, characterized in that the thickness of the electromagnetic wave absorption / photoelectric conversion part of multiple layers is thinner than the pixel size, to realize an image sensor with high sensitivity, high resolution, and no shading. Can do. In addition, an image sensor having high photoelectric conversion efficiency and excellent stability during repeated use can be obtained. The above-described effect of the present invention is particularly remarkable when the pixel size of the image sensor is a high density of 2 to 20 microns.

  In the present invention, the pixel size refers to the size of the image sensor corresponding to the structural unit of the output image (the pixel of the output image), that is, a set of stacked electromagnetic wave absorption / photoelectric conversion parts, charge readout parts, and electrodes sandwiching them. It refers to the size of the unit element composed of a set. Since the unit element is composed of a plurality of electromagnetic wave absorbing layers, it accurately indicates a circle-equivalent diameter having the same area as that of the largest area among the electromagnetic wave absorbing layers. In addition, the thickness of the electromagnetic wave absorption / photoelectric conversion site of the plurality of layers accurately refers to the length between the outermost surfaces of the electrodes on the outermost sides in the plurality of electrodes of the pixel unit.

  In the following, for convenience of description of embodiments of the present invention, a typical CCD, the image sensor of Patent Document 2 (US Pat. No. 5,965,875) mentioned in the background art, Patent Document 3 (Japanese Patent Laid-Open No. 2003-332551). The image pickup device in Japanese Patent Laid-Open Publication No. 1993) will be briefly described, and the aspect of the multilayer stacked multipixel image pickup device of the present invention will be described in comparison with them.

First, a horizontal structure of a general-purpose CCD is shown in FIG. Each component name in FIG. 1 is shown in the figure. In FIG. 1, incident light is collected by a microlens formed on the top of each pixel of the CCD and passes through a color filter to absorb and absorb electromagnetic waves (a cross hatch written as P + and its lower part). And an arrow written as a photodiode indicates its size). Incident light passes through a color filter to be color-separated, and each color light is absorbed, excited, and photoelectrically converted into a photodiode and stored as a signal charge in the photodiode. The pixel size is a range indicated by an arrow written as 1 pixel at the lower end of FIG. As can be seen from FIG. 1, in this CCD structure, the light that can be used is limited to the light that has passed through the opening of the light-shielding film. It will not be used.
The signal charge is temporarily stored in the hatched portion of n + of the charge reading / transfer site written as VCCD and then read out and transferred as an electric image signal. The charge readout / transfer site is covered with a light shielding film so as not to be affected by light.
The problems of the general-purpose CCD shown here are (1) the structure is complicated and the manufacturing load is large, (2) the effective utilization rate of light is low and it is difficult to achieve high sensitivity, and (3) the mosaic structure. Generation of moire, low-pass filter, easy generation of false signals, and (3) Shading occurs due to the micro lens, and the packaging load is large.

In order to improve the above-mentioned problems of the general-purpose CCD, a multilayer image element has been proposed in Patent Document 1, and one of the specifics of the concept is Patent Document 2. The structure of the image element will be described with reference to FIG.
FIG. 2 is a cross-sectional view showing a pixel structure of a laminated image element of a Foveon type inorganic semiconductor. FIG. 2 shows one pixel. A multilayer structure of a multilayer electromagnetic wave (generally light wave) absorption region written as n, p-well, n-well, and p-sub from the surface side on the Si substrate. It has become. The electromagnetic waves incident on this region are absorbed sequentially from the high energy energy, that is, from the short wavelength blue light if it is light, and the red light is absorbed on the deep side. The absorbed electromagnetic wave is photoelectrically converted and accumulated. When the electromagnetic wave is light, electrons derived from blue light absorbed in the n region are stored in the storage diode at the lower right of FIG. 2, and electrons derived from green light absorbed in the p-well region are stored in the center of the lower end of FIG. In addition, the electrons derived from the red light absorbed in the n-well region are transferred to the storage diode at the lower left of FIG. 2 and then transferred as an electric image signal.
The layered element of FIG. 2 can be highly sensitive in that it can absorb multiple electromagnetic waves in one pixel by layering, but on the other hand, it is difficult to separate the spectrum of the electromagnetic wave, so the color of the reproduced image is cloudy. The problem is that the image quality is degraded.

An improvement in the color mixture of the element shown in FIG. 2 has been proposed in the patent literature.
FIG. 3 is a cross-sectional view illustrating a pixel structure of a stacked image element called a hybrid type in this specification using an inorganic semiconductor and an organic photoelectric conversion body. In FIG. 3, the green light absorption layer in the stacked structure of the Si semiconductor shown in FIG. 2 is omitted and replaced with a photosensitive element made of a green absorbing photoelectric conversion organic dye on the surface of the Si semiconductor. This photosensitive element is composed of a transparent surface protective layer, a transparent conductive film, a green-absorbing photoelectric conversion organic dye molecule film, and a counter electrode from the surface side, and absorbs green light and produces an electrical image of green light by photoelectric conversion. Generate a signal. Therefore, since the light receiving portion made of an inorganic semiconductor becomes a photoelectric conversion layer that absorbs blue and red light, color separation of red, green, and blue is improved.
However, although the improvement effect of the hybrid type is recognized, the effect is still insufficient. In addition, since the electromagnetic wave absorption / photoelectric conversion site including the organic dye product molecular film is provided, the total thickness of the photosensitive element included in the element is increased.

  The multilayer laminated multi-pixel image sensor of the present invention will be described. FIG. 4 is a cross-sectional view of a typical multilayer stacked multi-pixel image sensor of the present invention. As shown in FIG. 4, the multilayer stacked multi-pixel imaging device of the present invention includes a transparent counter electrode, green, blue, and red photosensitive units from the front side, an insulating layer between the units, a base electrode, a charge storage diode, The signal read / transfer layer is provided with a charge transfer path, and this laminated structure is provided on a Si base indicated as N-sub in FIG. Each of the green, blue, and red photosensitive units includes a pair of a photosensitive layer and a transparent electrode layer that absorbs different color light and performs photoelectric conversion. Further, each of the green, blue, and red photosensitive units and the base electrode can be electrically connected by interelectrode contact. For each photosensitive layer, a thin film of organic dye molecules or an inorganic Si layer spectrally sensitized with an organic dye can be preferably used. The charge transfer path is preferably a CCD or CMOS system.

  Here, the thickness of the electromagnetic wave absorption / photoelectric conversion part refers to the length between the outermost surfaces of both outermost electrodes among the plurality of electrodes of the pixel unit according to the above definition. This is the length from the surface of the counter electrode on the surface to the base transparent electrode under the red photosensitive unit. Also, the pixel size is the distance between the two side partitions of the pixel unit where the green, red and blue photosensitive layers in FIG. 4 are overlaid. More precisely, the maximum area of the multilayer electromagnetic wave absorption / photoelectric conversion sites is shown. The size of the layer to be given is the size represented by the equivalent circle diameter.

FIG. 5 is a perspective view more specifically showing the configuration of the photoelectric conversion part and the signal reading / transfer part of the pixel of the multilayer stacked multi-pixel imaging device of the present invention. Each member name and each function in FIG. 5 are the same as those already described with reference to FIG.
The characteristics of the multilayer laminated multi-pixel imaging device of the present invention, which are high sensitivity, high resolution, and no shading, are due to the fact that the thickness of the electromagnetic wave absorption / photoelectric conversion site of multiple layers is thin relative to the pixel size. understood.
The electromagnetic wave referred to in the present invention means visible light including blue light, green light, red light and intermediate colors thereof, extreme ultraviolet light and ultraviolet light, infrared light and far infrared light, X-rays and γ-rays. Visible light is particularly important as an application of the image sensor. In this case, the response to the three colors of 400-500nm blue light, 500-600nm green light, and 600-700nm red light is important, but it also responds to 4-6 kinds of wavelength light (or electromagnetic waves). This is also important depending on the purpose. Particularly preferred is a method in which blue light, blue green light, green light, and red light are absorbed and subjected to photoelectric conversion, and this is particularly effective as a faithful color reproduction load. In addition, at least one of blue light, green light, and red light having two or more layers of electromagnetic wave absorption / photoelectric conversion sites can produce a favorable effect in terms of widening the dynamic range (photographing latitude).

The charge transfer / readout site needs to have a charge mobility of 100 cm ² / volt · sec or more, and this mobility is selected from a group IV, III-V, or II-VI group semiconductor. Can be obtained. Of these, silicon semiconductors (also referred to as Si semiconductors) are preferable because miniaturization technology is advanced and the cost is low. Many methods of charge transfer and charge reading have been proposed, but any method may be used. A particularly preferable method is a CMOS type or CCD type device. Furthermore, in the case of the present invention, the CMOS type is often preferable in terms of high-speed readout, pixel addition, partial readout, power consumption, and the like. The chip size of the device can be selected from brownie size, 135 size, APS size, 1 / 1.8 inch, and even smaller size.

  A plurality of contact parts that connect the electromagnetic wave absorption / photoelectric conversion part and the charge transfer / reading part may be connected by any metal, but are preferably selected from copper, aluminum, silver, gold, and chrome. Copper is preferred. As shown in FIG. 4 and FIG. 5, it is necessary to install each contact part between the charge transfer / readout part according to a plurality of electromagnetic wave absorption / photoelectric conversion parts. When adopting a laminated structure of multiple photosensitive units of blue, green, and red light, between the blue light extraction electrode and the charge transfer / readout region, between the green light extraction electrode and the charge transfer / readout region, and the red light extraction electrode It is necessary to connect between the charge transfer / readout portions.

As described above, the pixel size of the multilayer stacked multi-pixel imaging device of the present invention is represented by a circle-equivalent diameter corresponding to the maximum area of a plurality of electromagnetic wave absorption / photoelectric conversion sites. As long as the pixel size defined in the present invention and the thickness relationship between the upper and lower electrodes of the electromagnetic wave absorption / photoelectric conversion site are satisfied, the effect of the present invention is exhibited regardless of the pixel size. Size is preferred. More preferably, it is 2-10 microns, but 3-8 microns is particularly preferable.
When the pixel size exceeds 20 microns, the effect of the invention is reduced, and when the pixel size is smaller than 2 microns, the resolution is lowered due to radio wave interference between the sizes.
The thickness of the electromagnetic wave absorption / photoelectric conversion site is preferably 1-19 microns.

  The effect of satisfying the requirements of the pixel size to electromagnetic wave absorption / thickness ratio between the upper and lower electrodes of the photoelectric conversion part of the present invention depends on the chip size, but is effective when applied to a high-resolution imaging device having 1-100 M pixels. It is easy to express. Furthermore, practically, 3-30M pixels are preferable, and 5-10M pixels are particularly preferable.

The electromagnetic wave absorption / photoelectric conversion part needs to effectively absorb the incident visible light of 400-700 nm, and when light of 4800K color temperature is incident, it preferably absorbs 40% or more as integral absorption. Further, it is preferable to absorb 60% or more, particularly 70% or more.
The opening ratio of the electromagnetic wave absorption / photoelectric conversion site is preferably 70% or more, more preferably 80% or more, and particularly preferably 90% or more.

Various materials and systems can be adopted for the electromagnetic wave absorption / photoelectric conversion site of the present invention. Preferred materials and systems can be selected from i) organic thin film system, ii) organic / inorganic hybrid system, and iii) inorganic particle / thin film system.
In these systems, the electromagnetic wave absorption / photoelectric conversion layer of the above material is sandwiched between at least one light transmissive electrode, and it is particularly preferable to apply an electric field to the light transmissive electrode in order to further promote photoelectric conversion. The light-transmitting electrode can be selected from oxides such as indium, tin, and antimony such as ITO and ATO, a very thin metal thin film such as silver, copper, gold, and aluminum, or a metal mesh electrode.

i) Organic thin film method The organic thin film method is preferably selected from organic semiconductors that absorb visible light and are photoelectrically convertible (photoexcited to generate electron-hole pairs). Although the thickness of the organic thin film depends on the absorption coefficient of the compound, about 30 to 300 molecular layers are preferable from the viewpoint of light absorption and photoelectric conversion efficiency. Further, the mobility of the organic thin film is preferably selected from those having 10 ⁻⁵ cm ² / v · s or more and low dark conductivity, and more preferably 10 ⁻⁴ cm ² / v · s or more.

  The operation principle of the electromagnetic wave absorption / photoelectric conversion site will be described. FIG. 6 is a diagram schematically showing the operation principle of a typical organic dye molecule thin film / acceptor layer (or donor layer) type photosensitive unit among the electromagnetic thin film type electromagnetic wave absorption / photoelectric conversion sites. Each member used in the photosensitive unit is shown in the figure.

  As shown on the left side of FIG. 6, the photosensitive unit has an element structure composed of a photosensitive molecular film (P-type layer in FIG. 6) and an acceptor molecular film (n-type layer in FIG. 6). As shown in the band structure diagram on the right side, when light is irradiated to the photosensitive molecular film in the pixel, the photosensitive molecule is photoexcited to generate electron-hole pairs (carrier pairs) in the photosensitive molecular film. it can. At this time, the excited electrons transition to the acceptor molecular film. The transitioned photoelectrons are transferred to the read / transfer circuit as an image signal of electrons or potential.

  Further, when the light receiving element has a donor molecular film (p-type layer in FIG. 6) instead of an acceptor molecular film, light is irradiated to the photosensitive molecule (n-type layer in FIG. 6) in the pixel. As a result, the holes transition to donor molecules. The electron transfer relationship between the photosensitive layer and the acceptor layer in FIG. 6 is reversed between the photosensitive layer and the donor layer, but the working mechanism is the same except for this point.

A preferable photosensitive molecular film constituting each photosensitive unit is, for example, a molecular film in which coumarin 6 is dispersed in a binder polymer PHPPS as a blue light absorbing molecular film, and the internal quantum efficiency thereof is about 1%. The green light absorbing molecular film is, for example, a molecular film in which rhodamine 6G is dispersed in the binder polymer PMPS, and its internal quantum efficiency is about 1%. The red photosensitive molecular film is, for example, a combination of a red-light-excitable organic dye and an electron transport layer or a hole transport layer, the electron transport layer is composed of AlQ ₃ , and the hole transport layer is composed of Zn phthalocyanine. The internal quantum efficiency is about 20%.

  In order to adjust the spectrum of electromagnetic wave absorption and promote charge separation, it is preferable to configure an electromagnetic wave absorption / photoelectric conversion site composed of a plurality of organic compounds. A typical example is a method of forming a composite multilayer of two or more layers of a p-type organic compound and an n-type organic compound, or a method of providing a mixed layer of both, but can be selected according to the purpose. I can do it. Furthermore, when forming a multilayer film of an organic compound, the ordering of the arrangement accompanying the self-organization of the organic compound is very preferable for the present invention.

ii) Organic-inorganic hybrid type electromagnetic absorption and photoelectric conversion part of the organic-inorganic hybrid _{scheme, TiO 2, ZnO, SnO 2} , ZnS, CdS, ZnSe, oxides such as CdSe, sulfides, and their mixed crystals A substrate can be selected. For the substrate, it is preferable to select a material having as large a surface area as possible from an aggregate of nanoparticles, a sintered body, a thin film, a thin film with pores, or a mixture thereof. It is necessary to adsorb spectral sensitizing dyes using these surfaces. Various dyes known in the photographic industry, electrophotography, color sensitized solar cells and the like can be selected as spectral sensitizing dyes.
Preferred dyes include cyanine dyes, styryl dyes, hemicyanine dyes, merocyanine dyes (including zero methine merocyanine (simple merocyanine)), trinuclear merocyanine dyes, tetranuclear merocyanine dyes, rhodacyanine dyes, complex cyanine dyes, complex merocyanine dyes, and allopolar dyes. Dye, oxonol dye, hemioxonol dye, squalium dye, croconium dye, azamethine dye, coumarin dye, arylidene dye, anthraquinone dye, triphenylmethane dye, azo dye, azomethine dye, spiro compound, metallocene dye, fluorenone dye, fulgide dye Perylene dye, phenazine dye, phenothiazine dye, quinone dye, indigo dye, diphenylmethane dye, polyene dye, acridine dye, Cridinone dye, diphenylamine dye, quinacridone dye, quinophthalone dye, phenoxazine dye, phthaloperylene dye, porphyrin dye, chlorophyll dye, phthalocyanine dye, metal complex dye, cyanine dye, styryl dye, hemicyanine dye, merocyanine dye, trinuclear merocyanine dye, 4 Examples thereof include methine dyes such as nuclear merocyanine dyes, rhodacyanine dyes, complex cyanine dyes, complex merocyanine dyes, allopolar dyes, oxonol dyes, hemioxonol dyes, squalium dyes, croconium dyes, and azamethine dyes.

The photosensitive unit may be of a single layer dye / inorganic substrate spectral sensitization type. FIG. 7 is a diagram schematically showing the configuration and operation principle of a single layer dye / inorganic substrate spectral sensitization type photosensitive unit. Each component name and each action / function are shown in the figure.
In the schematic configuration diagram of the photosensitive unit on the left side of FIG. 7, titania (titanium oxide) in which a photosensitive dye is adsorbed on the particle surface is disposed on the conductive film to form a photosensitive layer. When light is irradiated through a transparent glass plate, the photosensitive dye is excited by absorbing light in the spectral sensitization wavelength region to form a pair of electrons and holes, and then the excited electrons are received by the titania particles. The The electrons are further read out to the conductive film and transferred in the form of an image electrical signal.
In order to promote charge separation, a mediator that promotes hole transport may be used in combination. As the mediator, water-soluble redox, gel-like redox, or solid redox can be selected, but solid redox is preferable for the present invention, and CuI-based redox is particularly preferable.

iii) Inorganic particle / thin film method For the electromagnetic wave absorption / photoelectric conversion site of the inorganic particle / thin film method, it is necessary to select an inorganic compound that absorbs visible light. Examples thereof include chalcogenide elements and compounds thereof, oxides, III-V group elements and oxides thereof. Typical examples include CdSe and CdS. Aggregates, sintered bodies, and thin films of fine particles of inorganic compounds are preferable as electromagnetic wave absorption / photoelectric conversion sites. A composite material of a target inorganic compound having visible absorption and a compound having no visible absorption is also useful, and can be selected from various forms such as a form in which visible absorption fine particles are dispersed on the other side, or a form in which both form a layer. The method for adjusting the absorption spectrum using the quantum dot effect of the nanoparticles by controlling the size and size distribution of the inorganic fine particle compound is very preferable for the present invention. As an example, the absorption spectrum of nano-sized particles of CdSe can be adjusted depending on the particle size. For example, blue light absorption can be adjusted around 2 nm, green light absorption around 5 nm, and red light absorption around 8 nm. Therefore, it is possible to create a preferable spectrum by adjusting the size and size, which is preferable for the present invention.

<Manufacture of multi-pixel image elements and materials used>
Each layer constituent material and manufacturing process of the multi-pixel imaging device in which the plurality of layers of electromagnetic wave absorption / photoelectric conversion parts are laminated will be further described.
The multi-pixel image sensor is applied to each color-sensitive layer to be applied and the amount of each element to be used for the electrode layer with respect to the pixel size of the image element to be created, for example, in the manufacturing process described later with reference to FIG. The image pickup device of the present invention can be obtained by adjusting the thickness and making the thickness smaller than the pixel size. Each element and a method for creating each element will be described below.

In the present invention, it is preferable to use a light-transmitting electrode in a multilayer electromagnetic wave absorption / photoelectric conversion site, and examples thereof include oxides such as ITO, ATO, such as indium, tin, and antimony, silver, copper, gold, and aluminum. It is possible to select from a very thin metal thin film such as a metal mesh electrode.
As the formation method, it can be formed by a laser ablation method, a sputtering method or the like.

  As the compound that absorbs visible light in the organic thin film system, any compound may be used, but preferably a cyanine dye, a styryl dye, a hemicyanine dye, a merocyanine dye (including zero methine merocyanine (simple merocyanine)), 3 Nuclear merocyanine dye, 4-nuclear merocyanine dye, rhodacyanine dye, complex cyanine dye, complex merocyanine dye, allopolar dye, oxonol dye, hemioxonol dye, squalium dye, croconium dye, azamethine dye, coumarin dye, arylidene dye, anthraquinone dye, tri Phenylmethane dye, azo dye, azomethine dye, spiro compound, metallocene dye, fluorenone dye, fulgide dye, perylene dye, phenazine dye, phenothiazine dye, key Emissions dyes, indigo dyes, diphenylmethane dyes, polyene dyes, acridine dyes, acridinone dyes, diphenylamine dyes, quinacridone dyes, quinophthalone dyes, phenoxazine dyes, phthaloperylene dyes, porphyrin dyes, chlorophyll dyes, phthalocyanine dyes and metal complex dyes.

  Cyanine dye, styryl dye, hemicyanine dye, merocyanine dye, trinuclear merocyanine dye, tetranuclear merocyanine dye having a high degree of freedom in adjusting the absorption wavelength for use as a color image sensor, which is one of the objects of the present invention A methine dye such as rhodacyanine dye, complex cyanine dye, complex merocyanine dye, allopolar dye, oxonol dye, hemioxonol dye, squalium dye, croconium dye or azamethine dye can be preferably used. More preferred are merocyanine dyes, trinuclear merocyanine dyes, and tetranuclear merocyanine dyes, and more preferred are merocyanine dyes.

Details of these methine dyes are described in the following dye literature.
FMHarmer, `` Heterocyclic Compounds-Cyanine Dyes and Related Compounds, '' John Wiley & Sons New York, London, 1964,
From DMSturmer, "Heterocyclic Compounds-Special topics in cyclic chemistry", Chapter 18, Section 14, 482 515, John Wiley & Sons, New York, London, 1977,
"Rodd's Chemistry of Carbon Compounds" 2nd. Ed. Vol. IV, part B, 1977, Chapter 15, pages 369-422, Elsevier Science Public Company, Inc. (Elsevier Science Publishing Company Inc.), New York, etc.

Further, Research Disclosure (RD) 17643, pages 23-24, RD18716, page 648, right column to page 649, right column, RD308119, page 996, right column to page 998, right column, European Patent No. 0565096A1, page 65, 7- Those described in line 10, can be preferably used. Also, U.S. Pat. No. 5,747,236 (especially pages 30-39), U.S. Pat. No. 5,994,051 (especially pages 32-43), U.S. Pat. No. 5,340,694 (especially 21-58, provided that the number of n ₁₂ , n ₁₅ , n ₁₇ , n ₁₈ is not limited in the dyes shown in (XI), (XII), (XIII), and is an integer of 0 or more (preferably 4 or less), and a dye having a partial structure or structure shown in the general formula and specific examples can also be preferably used.

These organic compound layers are formed by a dry film forming method or a wet film forming method. Specific examples of the dry film forming method include a physical vapor deposition method such as a vacuum deposition method, an ion plating method, and an MBE method, or a CVD method such as plasma polymerization. As the wet film forming method, a casting method, a spin coating method, a dipping method, an LB method, or the like is used.
When a polymer compound is used as the compound having absorption in visible light, it is preferable to form a film by a wet film forming method that is easy to create. When a dry film formation method such as vapor deposition is used, it is difficult to use a polymer because it may be decomposed, and an oligomer thereof can be preferably used instead.
On the other hand, when a low molecule is used, it is preferable to form a film by a dry film forming method such as co-evaporation.

In the organic / inorganic hybrid system, a substrate can be selected from oxides such as TiO ₂ , ZnO, SnO ₂ , ZnS, CdS, ZnSe, and CdSe, sulfides, and mixed crystals thereof. For the substrate, it is preferable to select a material having as large a surface area as possible from an aggregate of nanoparticles, a sintered body, a thin film, a thin film with pores, or a mixture thereof. It is necessary to adsorb spectral sensitizing dyes using these surfaces. Various dyes known in the photographic industry, electrophotography, color sensitized solar cells and the like can be selected as spectral sensitizing dyes.

The particle size of the substrate is generally on the level of nm to μm, but the average particle size of the primary particles obtained from the diameter when the projected area is converted to a circle is preferably 1 to 200 nm, more preferably 1 to 10 nm. preferable.
Two or more different types of substrates may be mixed and used.
The substrate fabrication method is described in Sakuo Sakuo's "Sol-Gel Method Science" Agne Jofusha (1998), Technical Information Association's "Sol-Gel Method for Thin Film Coating" (1995), etc. Sol-gel method, Tadao Sugimoto's "Synthesis and size control of monodisperse particles by new synthesis gel-sol method", Materia, Vol. 35, No. 9, pp. 1012-1018 (1996) The gel-sol method described is preferred. Also preferred is a method developed by Degussa to produce an oxide by high-temperature hydrolysis of chloride in an oxyhydrogen salt.

  When the substrate is titanium oxide, the sol-gel method, the gel-sol method, and the high-temperature hydrolysis method in the hydrogen chloride salt are all preferred, but Kiyoshi Manabu's “Titanium Oxide Properties and Applied Technology”, Gihodo Publishing The sulfuric acid method and chlorine method described in (1997) can also be used. Further, as the sol-gel method, the method described in Journal of American Ceramic Society of Barbe et al., Vol. 80, No. 12, pp. 3157-3171 (1997), and the chemistry of Burnside et al. , Vol. 10, No. 9, 24 19-2425 are also preferred.

In order to apply semiconductor fine particles, a sol-gel method or the like can be used in addition to a method of applying a dispersion or colloidal solution of semiconductor fine particles. Also, a method of oxidizing metal, a method of depositing in a liquid phase from a metal solution by ligand exchange, etc. (LPD method), a method of vapor deposition by sputtering, a CVD method, or a metal that thermally decomposes on a heated substrate An SPD method in which a metal oxide is formed by spraying an oxide precursor can also be used.
In addition to the sol-gel method described above, a method of preparing a dispersion of semiconductor fine particles includes a method of grinding with a mortar, a method of dispersing while grinding using a mill, or a fine particle in a solvent when synthesizing a semiconductor. The method of depositing and using as it is is mentioned.

  As the application method, roller method, dipping method, etc. as application system, air knife method, blade method as metering system, wire that is disclosed in Japanese Patent Publication No. 58-4589 as application and metering can be made the same part The bar method, the slide hopper method, the extrusion method, the curtain method and the like described in U.S. Pat. Nos. 2,681,294, 2,714,419 and 2,767,911, are preferred. A spin method or a spray method is also preferred as a general purpose machine. As the wet printing method, intaglio, rubber plate, screen printing and the like are preferred, including the three major printing methods of letterpress, offset and gravure. From these, a preferred film forming method is selected according to the liquid viscosity and the wet thickness.

  After the substrate is applied on the electrode, the substrate fine particles are brought into electronic contact with each other, and in order to improve the coating film strength and the adhesion to the support, it is preferably heat-treated. The range of preferable heating temperature is 40-700 degreeC, More preferably, it is 100-600 degreeC. The heating time is about 10 minutes to 10 hours.

  The substrate preferably has a large surface area so that a large amount of dye can be adsorbed. The surface area of the semiconductor fine particle layer coated on the support is preferably at least 10 times, more preferably at least 100 times the projected area. The upper limit is not particularly limited, but is usually about 1000 times.

The sensitizing dye used in the photosensitive layer can be arbitrarily used as long as it is a compound that has absorption in the visible region and near infrared region and can sensitize a semiconductor. An organometallic complex dye, a methine dye, a porphyrin dye, or a phthalocyanine dye A dye is preferred, and a methine dye is preferred.
Preferred methine dyes for use in the present invention are polymethine dyes such as cyanine dyes, merocyanine dyes, and squarylium dyes. Examples of polymethine dyes preferably used in the present invention include JP-A-11-35836, JP-A-11-67285, JP-A-11-86916, JP-A-11-97725, JP-A-11-158395, and JP-A-11-158395. 11-163378, JP-A-11-214730, JP-A-11-214731, JP-A-11-238905, JP-A-2000-26487, European Patents 892411, 918441 and 991092 And the described dyes.

  In the inorganic particle / thin film method, it is necessary to select an inorganic compound that absorbs visible light. Examples include chalcogenides, oxides, III-V groups and the like. Typical examples include CdSe and CdS. Aggregates, sintered bodies, and thin films of fine particles of inorganic compounds are preferable as electromagnetic wave absorption / photoelectric conversion sites. A composite material of a target inorganic compound having visible absorption and a compound having no visible absorption is also useful, and can be selected from various forms such as a form in which visible absorption fine particles are dispersed on the other side, or a form in which both form a layer. The method of adjusting the absorption spectrum using the quantum dot effect of nanoparticles by controlling the size and size distribution of the inorganic fine particle compound is very preferable for the present invention. As an example, the absorption spectrum of nano-sized particles of CdSe can be adjusted depending on the particle size. For example, blue light absorption can be adjusted around 2 nm, green light absorption around 5 nm, and red light absorption around 8 nm. Therefore, it is possible to create a preferable spectrum by adjusting the size and size, which is preferable for the present invention.

A method of producing a semiconductor ultrafine particle called a core-shell type in which a calcium cadmium semiconductor ultrafine particle is an inner core (core) and a zinc chalcogenide semiconductor is a shell is described in BODabbousi et al., J. Phys. .B vol.101, (1997) 9463-9475. Examples have been reported in which sulfide shells such as zinc sulfide (ZnS) and CdS are formed by a reaction method in which semiconductor ultrafine particles are brought into contact with water, such as a reverse micelle method or an aqueous solution reaction. That is, B.I. S. Zou et al .; International Journal of Quantum Chemistry, Vol. 72, 439-450 (1999) on the formation of a ZnS shell on a CdS core (in addition, Cd (OH) 2 and CdO are considered as shell materials). Xu et al. Mater. Sci. 35, 1375-1378 (2000) report the formation of a CdS shell on a CdSe core.
As a means for coating these semiconductor ultrafine particles on the electrode, a known means can be used. For example, a dispersion of an organic solvent can be prepared and applied by spin coating.

The multilayer laminated multi-pixel imaging device of the present invention can be manufactured according to a so-called microfabrication process used for manufacturing a known integrated circuit or the like.
Basically, this method uses pattern exposure by active light or electron beam (mercury i, g emission line, excimer laser, X-ray, electron beam), pattern formation by development and / or burning, element formation material By repeated operations of placement (coating, vapor deposition, sputtering, CV, etc.) and removal of non-patterned material (heat treatment, dissolution treatment, etc.).
A typical example will be described with reference to FIGS. FIG. 8 shows a small part for explaining the manufacturing process, and FIG. 8a is a plan view and a ratio view of the base material as a starting material. Impurity regions for the source and drain and a gate electrode formed through the gate insulating film 8 are formed on the surface of the base denoted as N-sub shown in FIG. 4, and the gate insulating film 8 and the gate electrode are formed. An insulating film is further laminated on the upper portion to be flattened, and a light shielding film (not shown) is laminated thereon. Since the light-shielding film is often formed of a metal thin film, an insulating film is further formed thereon to form a semiconductor substrate shown in a plan view and an elevation view in FIG. (Below the insulation layer of the arrow).

A photoelectric conversion film serving as a light receiving portion is stacked on the semiconductor substrate having such a configuration. First, a counter electrode film divided for each pixel is formed on an insulating film of a substrate. For this purpose, a resist film is applied on the counter electrode film to form an electrode hole (FIG. 8c). Next, after columnar electrodes are deposited or coated, the resist film is removed and electrodes are provided in the electrode holes as shown in FIG. 8d. This electrode is connected to the underlying high concentration impurity region. This columnar electrode is electrically insulated from areas other than the counter electrode film and the high concentration impurity region.
An image element is manufactured by repeating such resist coating and pattern drawing on the coating film (or direct drawing of an electron beam or X-ray), resist removal, and burning.

  When contact holes are provided according to FIGS. 8c and 8d on the substrate of FIG. 8b, a similar process is repeated to stack, for example, a red detection photoelectric conversion film for each pixel on the counter electrode film. Similarly, a transparent common electrode film is laminated on the upper portion.

  On the common electrode film, a photoelectric conversion film for detecting green color divided for each pixel is laminated, and a transparent counter electrode film divided for each pixel is laminated thereon. The counter electrode film is electrically connected to the high concentration impurity region of the corresponding pixel by the columnar electrode. This columnar electrode is electrically insulated from areas other than the counter electrode film and the high concentration impurity region.

  A transparent insulating film is laminated on the counter electrode film, and a transparent counter electrode film divided for each pixel is laminated thereon. Each counter electrode film is electrically connected to the high concentration impurity region of the corresponding pixel by a columnar electrode. This columnar electrode is electrically insulated from areas other than the counter electrode film and the high concentration impurity region.

  On the counter electrode film, a photoelectric conversion film for detecting blue color divided for each pixel is laminated, a transparent common electrode film is laminated thereon, and a transparent protective film is laminated on the uppermost layer.

  In the photoelectric conversion film stacked solid-state imaging device having such a configuration, when light from a subject is incident, a photoelectric charge corresponding to the amount of incident blue light is generated in the photoelectric conversion film, and the common electrode film and the counter electrode film are When a voltage is applied between them, blue light photocharge flows into the high concentration impurity region.

  Similarly, a photoelectric charge corresponding to the amount of green light in the incident light is generated in the photoelectric conversion film, and when a voltage is applied between the common electrode film and the counter electrode film, the green light photoelectric charge has a high concentration. It flows into the impurity region.

  Similarly, a photoelectric charge corresponding to the amount of red light of the incident light is generated in the photoelectric conversion film, and when a voltage is applied between the common electrode film and the counter electrode film, the green light photoelectric charge has a high concentration. It flows into the impurity region. Then, a signal corresponding to the signal charge in each high concentration impurity region is read to the outside by, for example, a MOS circuit.

  In the above description, the case where the light absorption / photoelectric conversion layer is three photosensitive layers of red, green and blue has been described. However, a further light absorption / photoelectric conversion layer such as a blue-green layer (GB intermediate color: emerald color) is added. In the case of the pixel unit, the layers can be stacked in the same manner as described above, and the incident light absorption / photoelectric conversion process also proceeds in the same manner as described above.

  In this embodiment, a signal is read out by a MOS circuit formed on a semiconductor substrate. However, the charge stored in the high-concentration impurity region for storing the color signal is transferred to the vertical transfer path as in the conventional CCD image sensor. It is also possible to adopt a configuration in which the data is read along the horizontal transfer path and read out to the outside.

<Aspect of use of image sensor>
The image sensor of the present invention can be used for a digital still camera. It is also preferable to use it for a TV camera. Other applications include digital video cameras, surveillance cameras for the following applications (office buildings, parking lots, financial institutions and unmanned contractors, shopping centers, convenience stores, outlet malls, department stores, pachinko halls, karaoke boxes, game centers, Hospital), various other sensors (TV door phone, personal authentication sensor, factory automation sensor, home robot, industrial robot, piping inspection system), medical sensor (endoscope, fundus camera), video conference system, It can be used for applications such as videophones, mobile phones with cameras, safe driving systems for vehicles (back guide monitors, collision prediction, lane keeping systems), and video game sensors.

Among these, the image sensor of the present invention is suitable for TV camera applications. This is because a television camera can be reduced in size and weight because no color separation optical system is required. Moreover, since it has a high resolution in terms of the degree of exchange, it is particularly preferable for a television camera for high-definition broadcasting. In this case, the high-definition broadcast television camera includes a digital high-definition broadcast camera.
Furthermore, in the imaging device of the present invention, the electromagnetic wave absorption / photoelectric conversion site can be created so as not to be substantially sensitive to infrared light, so that an optical low-pass filter can be eliminated. It is preferable in that high sensitivity and high resolution can be expected.

  Furthermore, the imaging device of the present invention can be made thin and no color separation optical system is required, so that “an environment with different brightness such as daytime and nighttime”, “still is stationary. For shooting scenes that require different sensitivities, such as `` subjects and moving subjects '', and other shooting scenes that require different spectral sensitivity and color reproducibility, replace the image sensor of the present invention and shoot. This camera can meet a variety of shooting needs and eliminates the need to carry multiple cameras at the same time, reducing the burden on the photographer. As an image sensor to be exchanged, an exchange image sensor can be prepared for infrared light photography, black-and-white photography, and dynamic range change in addition to the above.

  The TV camera of the present invention can be obtained by referring to the description in Chapter 2 of the Video Information Media Society, Television Camera Design Technology (August 20, 1999, issued by Corona, ISBN 4-339-00714-5). Fig. 2.1 The television camera can be manufactured by replacing the color separation optical system and the image pickup device in the basic configuration with the image pickup device of the present invention.

FIG. 2 is a horizontal sectional view of a general-purpose CCD shown as a reference for explaining the present invention. It is sectional drawing which shows the pixel structure of the laminated image element of a Foveon type inorganic semiconductor shown as reference. It is sectional drawing which shows the pixel structure of the hybrid type | mold laminated image element shown as reference. 1 is a cross-sectional view of a typical multilayer stacked multi-pixel image sensor of the present invention. It is a perspective view which shows more specifically the structure of the photoelectric conversion site | part and signal reading / transfer site | part of the multilayer lamination | stacking multi-pixel image pick-up element of this invention. It is a figure which shows typically the operating principle of a typical organic thin film type electromagnetic wave absorption and photoelectric conversion site | part. It is the figure which showed typically the structure and operating principle of a single layer dye / inorganic substrate spectral sensitization type photosensitive unit. It is the figure which showed typically the manufacture initial process ad of the multilayer lamination multi-pixel image sensor of this invention for description.

Claims (21)

  A plurality of electromagnetic wave absorbing layers capable of absorbing and electromagnetically converting electromagnetic waves of different wavelengths, a pair of electrodes sandwiching each electromagnetic wave absorbing layer, a charge transmission / charge reading portion, and a charge transmission / charge reading portion with at least one of the pair of electrodes An image sensor having a pixel unit composed of at least a plurality of contact portions that connect to each other, and having a pixel size (a circle equivalent diameter of the same area as the electromagnetic wave absorbing layer that gives the largest area among the multilayered electromagnetic wave absorbing layers) A multilayer stacked multi-pixel imaging device characterized in that the length between the outermost surfaces of both outermost electrodes among the electrodes of the pixel unit is smaller.   At least one of the plurality of electromagnetic wave absorbing layers absorbs any one of blue light, green light, red light, ultraviolet light, infrared light, X-rays, and γ-rays, and performs photoelectric conversion. The multilayer laminated multi-pixel imaging device according to claim 1.   The plurality of electromagnetic wave absorbing layers have at least three electromagnetic wave absorbing layers, and the three layers absorb 400 to 500 nm of blue light, 500 to 600 nm of green light and 600 to 700 nm of red light, respectively, and perform photoelectric conversion. The multilayer laminated multi-pixel imaging device according to claim 1. The multilayer stacked multi-pixel imaging device according to any one of claims 1 to 3, wherein the charge transfer / charge reading portion is a semiconductor having a charge mobility of 100 cm ² / volt · sec or more.   The multilayer stacked multi-pixel imaging device according to claim 1, wherein the charge transfer / charge reading portion has a CMOS structure or a CCD structure.   The multilayer stacked multi-pixel imaging device according to claim 1, wherein the plurality of contact portions are made of a metal material.   The plurality of contact parts include at least three contact parts for connecting the blue light extraction electrode and the charge transfer / reading part, the green light extraction electrode and the charge transfer / reading part, and the red light extraction electrode and the charge transfer / reading part, respectively. The multilayer multilayer multi-pixel imaging device according to claim 1, wherein   The multilayer stacked multi-pixel imaging device according to claim 1, wherein the pixel size is 2 to 20 μm.   The multilayer stacked multi-pixel imaging device according to claim 1, wherein the number of pixels of the imaging device is 1 to 100 M pixels.   The multilayered multi-pixel imaging according to any one of claims 1 to 9, wherein a plurality of electromagnetic wave absorbing layers absorb 40% or more of incident visible light of 400 to 700 nm as a whole and perform photoelectric conversion. element.   The multilayer laminated multi-pixel image pickup device according to any one of claims 1 to 10, wherein the electromagnetic wave absorbing layer having the largest opening ratio among the plurality of electromagnetic wave absorbing layers has an opening ratio of 70% or more.   The multilayered multi-pixel according to any one of claims 1 to 11, wherein the plurality of electromagnetic wave absorbing layers include four electromagnetic wave absorbing layers that absorb at least blue light, blue green light, green light, and red light. Image sensor.   At least one of the electromagnetic wave absorbing layer for absorbing blue light, the electromagnetic wave absorbing layer for absorbing green light, and the electromagnetic wave absorbing layer for absorbing red light is composed of two or more electromagnetic wave absorbing layers. The multilayer laminated multi-pixel imaging device according to claim 3.   The multilayer laminated multi-pixel imaging device according to claim 1, wherein at least one electromagnetic wave absorbing layer has an organic compound film.   The multilayer stacked multi-pixel imaging device according to claim 14, wherein at least one electromagnetic wave absorbing layer has a plurality of organic compound films.   The multilayer stacked multi-pixel imaging device according to claim 1, wherein at least one electromagnetic wave absorbing layer contains an oxide or a chalcogenide semiconductor and a spectral sensitizing dye.   The multilayer stacked multi-pixel imaging device according to claim 1, wherein the at least one electromagnetic wave absorbing layer contains inorganic compound particles, an inorganic compound thin film, or a composite thereof.   A broadcast television camera using the image pickup device according to claim 1.   19. The broadcast television camera according to claim 18, wherein an optical low-pass filter is not used.   The broadcast television camera according to claim 18 or 19, wherein the image pickup device is replaceable.   The broadcast television camera according to any one of claims 18 to 20, wherein the broadcast television camera is for high-definition broadcasting.

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