JP2005264195A - Film-forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming apparatus for forming a film in a dangerous gas introduced therein or in an enclosed chamber, in which a substrate can be quickly changed without affecting an atmosphere in a chamber and adversely affecting a human body. <P>SOLUTION: This film-forming apparatus has a plurality of load lock chambers for introducing the substrate into the film-forming chamber. The substrate is replaced in a state that an atmosphere in the chamber is kept not to change as much as possible. The apparatus also increases a pressure in the film-forming chamber during a replacing operation by increasing an electric power applied to a cathode, to compensate a pressure loss in the film-forming chamber occurring when the substrate is replaced. The apparatus further has additionally a pressure control chamber, and a pressure control valve through which an atmospheric gas in the chamber is transferred and controlled. Thereby, the film can be stably formed in the same condition, even when the substrate is continuously replaced. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a film forming apparatus for forming a film such as a fluoride on a substrate or the like by sputtering.

  As a technique for forming a thin film such as a compound such as an oxide or a metal on a substrate or the like, there are techniques such as vacuum deposition and sputtering. Compared with vacuum deposition, sputtering is widely used for various types of film formation because a dense film can be formed at a low temperature.

  In general, sputtering is performed by introducing a rare gas such as Ar as a sputtering gas. When the material to be formed is a compound such as an oxide or fluoride, there is a method of sputtering using a compound target as a sputtering target. In this case, if sputtering is performed only with a rare gas such as Ar, a film with a loss of gas components is formed, resulting in a film having different physical properties as compared with a film that satisfies the original stoichiometric ratio, and has desired characteristics. Can't get. Specifically, in the case of fluoride, if sputtering film formation is performed only with Ar gas, it becomes a film having optical absorption due to fluorine deficiency and cannot be used as an optical thin film. For this reason, sputtering is performed by introducing a reactive gas such as oxygen or fluorine in addition to Ar gas, and since a component having a defect is compensated by the introduced gas component, a film having no defect is formed. It becomes possible. However, the gas to be introduced may be a safe gas, but fluorine gas is extremely dangerous and should be handled with care. That is, when fluorine gas is introduced as a sputtering gas, it may adversely affect the apparatus and the human body and cause serious damage. For fluorine gas, it is necessary not only to be careful in introducing the gas, but also to provide a detoxification facility for the exhaust system. It is a hindrance when introducing the process used.

  In addition, when introducing other reactive gases as well as fluorine gas, it is necessary to provide a gas introduction mechanism, and the equipment cost is lower than when sputtering is performed only with a normal rare gas such as Ar gas. There is also a problem that it becomes expensive. The same applies to reactive sputtering, which is a technique for forming a compound film by introducing a reactive gas as a sputtering gas using a metal target.

For this reason, as a process for solving these problems, a process for performing sputtering in a sealed state inside the chamber was developed.

International Publication No. 01/55477 Pamphlet

  By the way, in the process of performing sputtering in a state where the chamber is sealed, a compound film such as fluoride can be formed without flowing a reactive gas such as fluorine gas. However, in this process, since it is necessary to stabilize the pressure inside the chamber, it takes 30 to 40 minutes after the start of discharge until film formation is started. Therefore, improvement of throughput has been an important issue in this process.

  An object of the present invention is to provide a film forming apparatus capable of continuously forming a film on a substrate safely and easily at a high throughput in the sputtering film formation of such a compound film.

It is another object of the present invention to provide an etching apparatus and a cleaning apparatus that perform etching or cleaning with fluorine gas at a high throughput without introducing fluorine gas.

  The present invention has been made to solve the above problems.

A first invention has a substrate in a film formation chamber connected to an exhaust system, and a cathode capable of generating plasma by applying an electric field to discharge, and a metal or a metal on the cathode In a film forming apparatus for setting a target made of a fluorine compound, introducing a fluorine gas or a gas made of a compound containing fluorine as necessary, and generating a plasma to form a fluorine compound film on a substrate.
A first load-lock chamber that can be evacuated to transfer and replace the substrate, and a second load-lock chamber that can be evacuated to transfer and replace the substrate to the first load-lock chamber are provided. A film forming apparatus characterized by the above.

  A second invention has a substrate in a film formation chamber connected to an exhaust system, and a cathode capable of generating plasma by applying an electric field to discharge, and a solid compound is formed on the cathode. In a film-forming apparatus for forming a solid compound film on a substrate by generating a plasma in a state where a target composed of the above is installed and the film-forming chamber is hermetically sealed, a first vacuum evacuable for transferring and replacing the substrate is provided. And a second load lock chamber capable of being evacuated for transferring and replacing the substrate into the first load lock chamber.

  According to a third invention, in the film forming apparatus of the first or second invention, a third load lock capable of being evacuated for transferring the substrate to the second load lock chamber and exchanging the substrate. A film forming apparatus including a chamber.

  According to a fourth aspect of the present invention, in the film forming apparatus according to any one of the first to third aspects, a load lock valve capable of moving the substrate is provided between the chambers. The film forming apparatus is characterized in that the chamber is not evacuated.

  According to a fifth aspect of the present invention, in the film formation apparatus according to any one of the first to fourth aspects, a first load lock valve is provided between the film formation chamber and the first load lock chamber, The film forming apparatus is characterized in that when the first load lock valve is opened, the pressure in the first load lock chamber is lower than the pressure in the film forming chamber.

  A sixth invention is the film forming apparatus of any one of the first to fifth inventions, wherein a second load lock valve is provided between the first load lock chamber and the second load lock chamber. The film forming apparatus is characterized in that when the second load lock valve is opened, the pressure in the second load lock chamber is lower than the pressure in the first load lock chamber.

A seventh invention has a substrate and a cathode capable of generating plasma by applying an electric field to discharge in a film forming chamber connected to an exhaust system, and a solid compound on the cathode A film forming apparatus for forming a solid compound film on a substrate by generating a plasma in a state where a target composed of the above is sealed and the film forming chamber is sealed, and is capable of vacuum evacuation for transferring and replacing the substrate. In a film forming apparatus in which a first load lock valve is provided between the first load lock chamber and the film forming chamber, when the first load lock valve is opened, The film forming apparatus is characterized in that the power applied to at least one of the cathodes is increased without exhausting the air.

  An eighth invention has a substrate in a film forming chamber connected to an exhaust system, and a cathode capable of generating plasma by applying an electric field to cause discharge, and a solid compound is formed on the cathode. A film forming apparatus for forming a solid compound film on a substrate by generating a plasma in a state where a target composed of the above is sealed and the film forming chamber is sealed, and is capable of vacuum evacuation for transferring and replacing the substrate. In the film forming apparatus in which the first load lock valve is provided between the first load lock chamber and the film forming chamber, a pressure adjusting chamber is provided adjacent to the film forming chamber. A pressure regulating valve is provided between the membrane chamber and the pressure regulating chamber, and a dischargeable cathode and a solid compound are installed in the pressure regulating chamber. Then, by applying an electric field to the cathode and discharging it, the pressure in the pressure adjusting chamber is set higher than the pressure in the film forming chamber, and when opening the first load lock valve, Alternatively, after the opening, the pressure adjusting valve is opened.

  According to a ninth invention, in the film forming apparatus of any one of the first to seventh inventions, a pressure adjusting chamber is provided adjacent to the film forming chamber, and a pressure adjusting valve is provided between the film forming chamber and the pressure adjusting chamber. In the pressure adjustment chamber, a dischargeable cathode and a solid compound are installed, and an electric field is applied to the cathode to cause discharge, whereby the pressure in the pressure adjustment chamber is higher than the pressure in the film formation chamber. The pressure adjustment valve is opened when or after the valve provided between the first load lock chamber and the film forming chamber is opened. It is a membrane device.

  A tenth aspect of the present invention is the film forming apparatus according to the ninth aspect, wherein the film forming chamber and the pressure adjusting chamber are each provided with a pressure gauge, and the values of both pressure gauges are measured, The film forming apparatus is characterized in that the opening / closing state of the pressure adjusting valve is adjusted based on the above.

  An eleventh invention is a film forming apparatus according to any one of the second to tenth inventions, wherein the solid compound is a metal fluorine compound.

  A twelfth aspect of the present invention is the film forming apparatus according to any one of the second to eleventh aspects, wherein a gas introduction valve for introducing a gas for discharging into the film forming chamber and the gas in the film forming chamber are discharged to the outside. And a control mechanism for controlling the closing of the gas introduction valve and the exhaust valve when forming a film on the substrate.

  In a thirteenth aspect of the film forming apparatus according to any one of the first to twelfth aspects of the present invention, when opening the first load lock valve provided between the film formation chamber and the first load lock chamber, The film forming apparatus is characterized in that a pressure in the film forming chamber is in a range of 0.1 to 100 Pa.

  A fourteenth invention is characterized in that, in the film forming apparatus according to any one of the first to thirteenth inventions, a mechanism for etching the substrate is provided instead of the cathode for forming a film inside the film forming chamber. Is an etching apparatus.

According to a fifteenth aspect, in the film forming apparatus according to any one of the first to thirteenth aspects, a mechanism for cleaning the substrate is provided instead of the cathode for forming a film inside the film forming chamber. The substrate cleaning apparatus.

  According to the film forming apparatus of the present invention, a compound film can be formed on a substrate with a high throughput without introducing or discharging a reactive gas during film formation. Therefore, even if the film has a dangerous gas component such as fluorine as a constituent element, it is possible to form a film that satisfies the stoichiometric ratio without adversely affecting the environment and the human body and causing no environmental pollution problems. There is an effect that can be done.

Further, there is an effect that the substrate can be etched or cleaned with fluorine gas safely and with high throughput without introducing fluorine gas.

  FIG. 1 shows a configuration diagram of an embodiment of a film forming apparatus according to the present invention. The film forming apparatus includes a film forming chamber 1 for performing a film forming process, a vacuum pump 2 for exhausting the film forming chamber 1, and a gas cylinder 4 for introducing a plasma discharge gas into the film forming chamber 1. . An exhaust valve 3 for controlling the exhaust in the film forming chamber 1 is provided between the film forming chamber 1 and the vacuum pump 2 and is opened and closed by an exhaust valve driving mechanism (not shown). A gas introduction valve 5 is provided between the film forming chamber 1 and the gas cylinder 4, and the gas introduction valve 5 is opened and closed by a gas introduction valve drive mechanism (not shown). The vacuum chamber 1 is provided with a magnetron cathode 6 for film formation and a metal fluoride target 7 made of magnesium fluoride, and from a magnetron cathode 9 and magnesium fluoride for supplying a fluorine component. A metal fluoride target 10 is also provided. A high frequency power source (RF) (not shown) is connected to each of the magnetron cathodes 6 and 9 in order to apply an electric field. The magnetron cathode 9 is provided with a shutter 11 so that a fluorine component is supplied without scattering metal fluoride into the film forming chamber 1, and in addition, a pressure inside the film forming chamber 1 can be measured. Is provided with a vacuum gauge 8.

  A first load lock chamber 12 for replacing the substrate 15 is connected to the film forming chamber 1, and the substrate 15 can be formed in the film forming chamber 1 by opening and closing the first load lock valve 13. Become. The first load lock chamber 12 is connected to a vacuum pump 17 for evacuation, and evacuation can be controlled by an evacuation valve 18. The first load lock chamber 12 and the second load lock chamber 21 are connected via a part of the wall surface 14. The second load lock chamber 21 is provided with a transport mechanism 20 and a substrate 22 to be formed next, so that the substrate can be transported and exchanged inside the second load lock chamber 21. . The substrate holder 16 is in close contact with an O-ring provided on the wall surface 14, and this portion functions as a load lock valve (becomes a second load lock valve). In a state where the first load lock valve 13 is closed, the first load lock chamber 12 becomes an independent chamber, and the inside can be exhausted independently by the exhaust pump 17. The first load lock chamber 12 is provided with a vacuum gauge 19 for measuring the internal pressure.

The second load lock chamber 21 can be independently evacuated by the vacuum pump 23 when the substrate holder 16 and the wall surface 14 are in close contact with each other and the third load lock valve 25 is closed. The exhaust control by the vacuum pump 23 inside the second load lock chamber 21 is as follows.
The pressure in the second load lock chamber 21 is measured by a vacuum gauge 26 under the control of the exhaust valve 24. Further, the substrate is transferred from the outside to the second load lock chamber 21 by opening the third load lock valve 25.

A method of forming a film using this film forming apparatus will be described.

First, the vacuum pump 2 is activated, the exhaust valve 3 is opened, and the inside of the chamber 1 is evacuated to make a vacuum state. The pressure inside the vacuum chamber 1 at this time is 1 × 10 ⁻⁴ Pa or less.

  Next, the gas introduction valve 5 is opened, and argon gas is introduced into the vacuum chamber 1 from the gas cylinder 4. At this time, the exhaust valve 3 and the gas introduction valve 5 are adjusted to adjust the pressure inside the chamber 1 to 1 Pa.

  Next, an electric field is applied to the magnetron cathodes 6 and 9 by an RF power source (not shown), and plasma is generated on the magnesium fluoride which is the metal fluoride targets 7 and 10 installed on the magnetron cathodes 6 and 9. . At this time, the first load lock valve 13 is closed.

  Next, the gas introduction valve 5 is closed to stop the introduction of argon gas into the vacuum chamber 1, and the exhaust valve 3 is closed while the plasma discharge is maintained. In this state, the inside of the vacuum chamber 1 is in a sealed state, and the pressure inside the vacuum chamber 1 is 0.5 Pa at this time. Thereafter, by continuing the discharge for 40 minutes, the pressure in the vacuum chamber 1 becomes 2 Pa.

  Next, the process for transporting the substrate to be formed will be described. The substrate on which the film is formed is carried in from the atmosphere outside the apparatus by opening the third load lock valve 25. At this time, the pressure in the second load lock chamber 21 becomes atmospheric pressure by venting with nitrogen, and the first load lock chamber 12 is evacuated by the vacuum pump 17. After the substrate is transferred to the position where the substrate 22 is placed in the second load lock chamber 21, the third load lock valve 25 is closed, the exhaust valve 24 is opened, and the vacuum pump 23 is used to close the second load lock chamber 25. 21 is exhausted. The pressure in the second load lock chamber 21 is constantly monitored by a vacuum gauge 26, and after the pressure in the second load lock chamber 12 becomes lower than that in the first load lock chamber 12, the exhaust valve 24 is closed and the second load lock chamber 21 is closed. The inside of the lock chamber 21 is sealed. Thereafter, the substrate 15 and the substrate holder 16 that have been deposited and are installed in close contact with the wall surface 14 by the transport mechanism 20 are moved to a position where the substrate 22 is located, and the film that is mounted on the substrate holder 16 at this position. The substrate on which the film is formed is exchanged with the substrate on which the film is not yet formed. After replacing the substrate, the substrate holder 16 on which the substrate is mounted is brought into close contact with the wall surface 14 again. At this time, since the first load lock valve 13 is closed and is in a sealed state, the gas does not move directly from the film forming chamber 1 to the second load lock chamber 21.

The first load lock chamber 12 starts to be exhausted by the vacuum pump 17 by opening the exhaust valve 18. The pressure in the first load lock chamber 12 is monitored by the vacuum gauge 19, and the exhaust valve 18 is closed when the pressure in the first load lock chamber 12 becomes lower than the pressure in the film forming chamber 1, The first load lock valve 13 is opened. At the same time when the first load lock valve 13 is opened, sputter particles from the magnesium fluoride target 7 installed on the magnetron cathode 6 are formed on the substrate 15. A magnesium fluoride film is deposited. After the predetermined film thickness is deposited, the first load lock valve 13 is closed.

  While this film formation is being performed, the substrate that has been formed in the second load lock chamber 21 and the substrate that has not been formed yet that are present outside the apparatus are exchanged. Is done. For this reason, the second load lock chamber 21 is vented with nitrogen gas until the same pressure as the atmospheric pressure is reached. Thereafter, the third load lock valve 25 is opened to form a film that exists in the atmosphere. Replace with a board that has not been replaced. After replacing the substrate, the third load lock valve 25 is closed again, the exhaust valve 24 is opened with the inside of the second load lock chamber 21 sealed, and the second load lock chamber is opened by the vacuum pump 23. 21 is exhausted. The substrate loading / unloading operation is performed by repeatedly opening and closing the valve between the chambers and transporting the substrate, thereby enabling continuous film formation with almost no time loss.

  Since the first load lock chamber 12 has a sufficiently smaller volume than the film formation chamber 1, a part of the gas in the film formation chamber 1 is made to be in the first load lock by opening and closing the first load lock valve 13. Although flowing into the chamber 12, there is almost no pressure fluctuation in the film forming chamber 1.

  In addition, in order to transport the substrate to the film forming chamber 1, it is carried through the first load lock chamber 12, the second load lock chamber 21, and the two-stage load lock chamber. Can be prevented from flowing into the film forming chamber 1 as much as possible, so that the atmosphere in the film forming chamber 1 can be maintained.

  Thus, by replacing the substrate into the film forming chamber 1 through the two-stage load lock chamber, the substrate can be replaced quickly and without any influence on the atmosphere inside the film forming chamber 1. . Therefore, even in a process in which it takes time to form a film, such as a film forming process in which a film is formed with the inside of the film forming chamber 1 sealed, a rapid continuous film forming is possible. . Further, when a fluoride film is formed, dangerous fluorine may remain in the film forming chamber 1, and it is possible to prevent fluorine from diffusing into the atmosphere when the substrate is carried in and out. It is possible to prevent the influence on the human body and the environment.

Therefore, the present invention is not limited to the case where film formation is performed with the film formation chamber 1 being sealed, but is effective even when sputtering is performed while a dangerous gas such as fluorine gas is supplied. This is because when the substrate is taken out, the gas in the film forming chamber 1 hardly leaks out of the apparatus and does not adversely affect the human body or the like.

In the first embodiment, when the first load lock valve 13 is opened, the power applied to the magnetron cathode 9 is increased. Specifically, an RF electric field of 200 W is applied to the magnetron cathodes 6 and 9, and when the first load lock valve 13 is opened, the RF power applied to the magnetron cathode 9 is 210 W. This is based on an empirical rule that the pressure in the film forming chamber 1 increases when the power applied in the closed film forming chamber 1 is increased. Thereafter, the pressure in the film forming chamber 1 is monitored by the vacuum gauge 8, and the power applied to the magnetron cathode 9 is gradually reduced. Thus, when the first load lock valve 13 is opened, the pressure in the film forming chamber 1 can be further stabilized by increasing the RF power applied to the magnetron cathode 9.

  FIG. 2 shows a configuration diagram of an embodiment of a film forming apparatus according to the present invention. The film forming apparatus includes a film forming chamber 101 for performing a film forming process, a vacuum pump 102 for exhausting the film forming chamber 101, and a gas cylinder 104 for introducing a gas for plasma discharge into the film forming chamber 101. . An exhaust valve 103 for controlling exhaust in the film forming chamber 101 is provided between the film forming chamber 101 and the vacuum pump 102 and is opened and closed by an exhaust valve driving mechanism (not shown). A gas introduction valve 105 is provided between the film forming chamber 101 and the gas cylinder 104, and the gas introduction valve 105 is opened and closed by a gas introduction valve drive mechanism (not shown). The vacuum chamber 101 is provided with a magnetron cathode 106 for forming a film and a metal fluoride target 107 made of magnesium fluoride, and from the magnetron cathode 109 and magnesium fluoride for supplying a fluorine component. A metal fluoride target 110 is also installed. Each of the magnetron cathodes 106 and 109 is connected to a high frequency power source (RF) (not shown) for applying an electric field. The magnetron cathode 109 is provided with a shutter 111 so that a fluorine component can be supplied without scattering metal fluoride into the film forming chamber 101. In addition, a pressure inside the film forming chamber 101 can be measured. Is provided with a vacuum gauge 108.

  A first load lock chamber 112 for replacing the substrate 115 is connected to the film formation chamber 101, and the substrate 115 can be formed in the film formation chamber 101 by opening and closing the first load lock valve 113. It becomes. The first load lock chamber 112 is connected to a vacuum pump 117 for evacuating and can be controlled by an exhaust valve 118. The first load lock chamber 112 and the second load lock chamber 121 are connected via a part of the wall surface 114. The second load lock chamber 121 is provided with a transfer mechanism 120 and a substrate 122 to be formed next, so that the substrate can be transferred and exchanged inside the second load lock chamber 121. . The substrate holder 116 is in close contact with an O-ring provided on the wall surface 114, and this part functions as a load lock valve (becomes a second load lock valve). When the first load lock valve 113 is closed, the first load lock chamber 112 becomes an independent chamber, and the inside can be exhausted independently by the exhaust pump 117. The first load lock chamber 112 is provided with a vacuum gauge 119 for measuring the internal pressure.

  Similarly, the second load lock chamber 121 can be evacuated independently by the vacuum pump 123 when the substrate holder 116 and the wall surface 114 are in close contact with each other and the third load lock valve 125 is closed. The exhaust control by the vacuum pump 123 inside the second load lock chamber 121 is controlled by opening and closing the exhaust valve 124, and the pressure in the second load lock chamber 121 is measured by the vacuum gauge 126.

  The transfer of the substrate from the third load lock chamber 127 to the second load lock chamber 121 is carried in with the third load lock valve 125 opened. A vacuum pump 128 is connected to the third load lock chamber 127, and exhaust is controlled by an exhaust valve 129. In the third load lock chamber, a substrate 130 for loading into the second load lock chamber 121 is installed inside the third load lock chamber 127. This substrate 130 is provided with a fourth load lock chamber. It is carried in from the outside by opening and closing the valve 132. A vacuum gauge 131 is provided to measure the pressure inside the third load lock chamber 127.

  The film forming process in this example is the same as that in Example 1. Hereinafter, the transfer of the substrate while the film is formed on the substrate 115 in the deposition chamber 101 will be described.

  The substrate on which the film is formed is carried in from the atmosphere outside the apparatus by opening the fourth load lock valve 132. At this time, the pressure in the third load lock chamber 127 becomes atmospheric pressure by venting with nitrogen gas, and the second load lock chamber 121 is evacuated to vacuum by the vacuum pump 123. After the substrate is transferred to the position of the substrate 130 in the third load lock chamber 127, the fourth load lock valve 132 is closed, the exhaust valve 129 is opened, and the exhaust in the third load lock chamber 127 is opened by the vacuum pump 128. I do. The pressure in the third load lock chamber 127 is constantly monitored by the vacuum gauge 131. After the pressure becomes lower than the pressure in the second load lock chamber 121, the exhaust valve 128 is closed and the third load lock chamber 127 is closed. The inside of the load lock chamber 127 is sealed.

  Thereafter, the exhaust valve 124 of the second load lock chamber 121 is also closed, and the second load lock chamber 121 is also sealed. Thereafter, the third load lock valve 125 is opened, and the substrate is carried into the second load lock chamber 121 from the third load lock chamber 127.

  At this time, the first load lock chamber 112 is evacuated to vacuum by the vacuum pump 117. After the substrate is transported to the position of the substrate 122 in the second load lock chamber 121, the third load lock valve 125 is closed, the exhaust valve 124 is opened, and the exhaust in the second load lock chamber 121 is opened by the vacuum pump 123. I do. The pressure in the second load lock chamber 121 is constantly monitored by the vacuum gauge 126. After the pressure is lower than the pressure in the first load lock chamber 112, the exhaust valve 124 is closed and the second load lock chamber 121 is closed. The inside of the load lock chamber 121 is sealed.

  Thereafter, the substrate 115 and the substrate holder 116 that have been deposited and are installed in close contact with the wall surface 114 by the transport mechanism 120 are moved to a position where the substrate 122 is located, and are mounted on the substrate holder 116 at this position. The substrate on which the film is formed is exchanged with the substrate on which the film is not yet formed. After replacing the substrate, the substrate holder 116 on which the substrate is mounted is brought into close contact with the wall surface 114 again. At this time, since the first load lock valve 113 is closed and in a sealed state, the gas does not move directly from the film formation chamber 101 to the second load lock chamber 121.

  The first load lock chamber 112 starts to be exhausted by the vacuum pump 117 by opening the exhaust valve 118. The pressure in the first load lock chamber 112 is monitored by the vacuum gauge 119, and the exhaust valve 118 is closed when the pressure in the first load lock chamber 112 becomes lower than the pressure in the film formation chamber 101, The first load lock valve 113 is opened. At the same time as the first load lock valve 113 is opened, the sputtered particles from the magnesium fluoride target 107 installed on the magnetron cathode 106 are deposited, and the first load lock valve 113 is opened on the substrate 115. A magnesium halide film is deposited. After the predetermined film thickness is deposited, the first load lock valve 113 is closed.

While this film formation is being performed, the film that has been formed in the second load lock chamber 121 and the film that has been formed in the third load lock chamber 127 are still being formed. Replaced with no substrate. At this time, the exhaust valve 124 remains closed, the second load lock chamber 121 is sealed, and similarly, the exhaust valve 129 remains closed and the third load lock chamber 127 is also sealed. ing. Thereafter, the third load lock valve 125 is opened to replace the substrate. After the replacement of the substrate is completed, the third load lock valve 125 is closed. Thereafter, the substrate that has not been formed yet is exchanged with the substrate existing outside the apparatus. For this reason, the inside of the third load lock chamber 127 is vented with nitrogen gas until the same pressure as the atmospheric pressure is reached, and then the fourth load lock valve 132 is opened to form a film that exists in the atmosphere. Replace with a board that has not been replaced. After the substrate is replaced, the fourth load lock valve 132 is closed again, the exhaust valve 129 is opened with the inside of the third load lock chamber 127 sealed, and the third load lock chamber is opened by the vacuum pump 128. The exhaust in 127 is performed. The substrate loading / unloading operation is performed by repeatedly opening and closing the valve between these chambers and transferring the substrate, and there is almost no time loss, and continuous film formation is possible.

As described above, by providing three stages of the load lock chamber, it is possible to further suppress the fluctuation of the atmosphere in the film forming chamber 101 due to the loading / unloading of the substrate as compared with the case of the first embodiment.

  FIG. 3 shows a configuration diagram of an embodiment of a film forming apparatus according to the present invention. This film forming apparatus includes a film forming chamber 201 for performing a film forming process, a vacuum pump 202 for exhausting the film forming chamber 201, and a gas cylinder 204 for introducing a gas for plasma discharge into the film forming chamber 201. . An exhaust valve 203 for controlling exhaust in the film forming chamber 201 is provided between the film forming chamber 201 and the vacuum pump 202, and is opened and closed by an exhaust valve driving mechanism (not shown). A gas introduction valve 205 is provided between the film forming chamber 201 and the gas cylinder 204, and the gas introduction valve 205 is opened and closed by a gas introduction valve drive mechanism (not shown). The vacuum chamber 201 is provided with a magnetron cathode 206 for film formation and a metal fluoride target 207 made of magnesium fluoride, and from the magnetron cathode 209 and magnesium fluoride for supplying a fluorine component. A metal fluoride target 210 is also installed. Each of the magnetron cathodes 206 and 209 is connected to a high frequency power source (RF) (not shown) for applying an electric field. The magnetron cathode 209 is provided with a shutter 211 so that the metal fluoride does not scatter into the film forming chamber 201 and is supplied with a fluorine component, and in addition, the pressure inside the film forming chamber 201 can be measured. Is provided with a vacuum gauge 208.

  A first load lock chamber 212 for replacing the substrate 215 is connected to the film formation chamber 201, and the substrate 215 can be formed in the film formation chamber 201 by opening and closing the first load lock valve 213. It becomes. The first load lock chamber 212 and the second load lock chamber 217 are connected via a part of the wall surface 214. The second load lock chamber 217 is provided with a transport mechanism 224 and has a function of transporting and exchanging the substrate inside. The substrate holder 216 is in close contact with an O-ring provided on the wall surface 214, and this portion functions as a load lock valve (becomes a second load lock valve). When the first load lock valve 213 is closed, the first load lock chamber 212 is an independent chamber.

The second load lock chamber 217 is connected to the third load lock chamber 218 by a third load lock valve 223, and further, the second load lock chamber chamber 217 is connected by a fourth load lock valve 230. A fourth load lock chamber 225 is connected.

The film forming process in this example is the same as that in Example 1. Hereinafter, the conveyance of the substrate will be described.

The third load lock chamber 218 stores a plurality of substrates 221 that are not formed. At this time, the third load lock valve 223 is closed and the exhaust valve 22 is closed.
0 is opened, and the inside of the third load lock chamber 218 is evacuated by the vacuum pump 219. The pressure in the third load lock chamber 218 is measured by the vacuum gauge 222. After the pressure in the third load lock chamber 218 becomes lower than the pressure in the film forming chamber 201, the exhaust valve 220 is closed and the inside of the third load lock chamber 218 is sealed. It becomes a state. Thereafter, the third load lock valve 223 is opened to transport the substrate into the second load lock chamber 217. Thereafter, the third load lock valve 223 is closed and the first load lock valve 213 is also closed, and then the substrate holder 216 to which the substrate 215 is mounted is raised and separated from the wall surface 214. Thereafter, in the second load lock chamber 217, the substrate on which film formation has already been performed is separated from the substrate holder 216, and the substrate on which no film formation is carried from the third load lock chamber 218 is replaced. The Thereafter, the substrate holder 216 comes into close contact with the wall surface 214, and the first load lock valve 213 is opened to form a film on the substrate 215. Here, the substrate on which the film is already formed in the second load lock chamber 217 is moved by the transfer system 224 and is stored in the fourth load lock chamber 225. The fourth load lock chamber 225 is a chamber that accommodates only the substrate 228 after completion of film formation. Therefore, no substrate is present in the fourth load lock chamber 225 at first. The fourth load lock chamber 225 is first exhausted by the vacuum pump 226 by opening the exhaust valve 227. After the pressure inside the fourth load lock chamber 225 is measured by the vacuum gauge 229 and becomes lower than the pressure in the film forming chamber 208, the exhaust valve 227 is closed and sealed. The substrate after completion of film formation existing in the second load lock chamber 217 is then carried into the fourth load lock chamber 225 by opening the fourth load lock valve 230. After the substrate is loaded, the fourth load lock valve 230 is closed.

  In this embodiment, all of the first load lock chamber 212, the second load lock chamber 217, the third load lock chamber 218, and the fourth load lock chamber 225 are exhausted once in addition to the film formation chamber 201. After this, even when the substrate is exchanged between the film formation chamber 201 and the first load lock chamber 212, it is necessary to break the vacuum until the substrate 221 in the third load lock chamber 218 is exhausted. Therefore, the first load lock chamber 212 is not evacuated when replacing the substrate.

By repeating this substrate transfer process, the substrate is continuously supplied into the film formation chamber 201 via the first load lock chamber 212, so that film formation is possible without time loss.

FIG. 4 shows a configuration diagram of an embodiment of a film forming apparatus according to the present invention. This film forming apparatus includes a film forming chamber 301 for performing a film forming process, a vacuum pump 302 for exhausting the film forming chamber 301, and a gas cylinder 304 for introducing a plasma discharge gas into the film forming chamber 301. . Between the film forming chamber 301 and the vacuum pump 302, an exhaust valve 303 for controlling exhaust in the film forming chamber 301 is provided, and is opened and closed by an exhaust valve driving mechanism (not shown). Further, a gas introduction valve 305 is provided between the film forming chamber 301 and the gas cylinder 304, and the gas introduction valve 305 is opened and closed by a gas introduction valve drive mechanism (not shown). The vacuum chamber 301 is provided with a magnetron cathode 306 for film formation and a metal fluoride target 307 made of magnesium fluoride, and from a magnetron cathode 309 and magnesium fluoride for supplying a fluorine component. A metal fluoride target 310 is also installed. Each of the magnetron cathodes 306 and 309 is connected to a high frequency power supply (RF) (not shown) for applying an electric field. The magnetron cathode 309 is provided with a shutter 311 so that a fluorine component is supplied without scattering metal fluoride into the film forming chamber 301. In addition, a pressure inside the film forming chamber 301 can be measured. Is provided with a vacuum gauge 308.

A first load lock chamber 312 for replacing the substrate 315 is connected to the film formation chamber 301, and the substrate 315 can be formed in the film formation chamber 301 by opening and closing the first load lock valve 313. It becomes. The first load lock chamber 312 is connected to a vacuum pump 317 for evacuating, and evacuation can be controlled by an exhaust valve 318. A substrate is loaded into the first load lock chamber 312 via a part of the wall surface 314. The substrate 321 that has not yet been formed and the substrate 315 that has been formed can be exchanged by the transfer mechanism 320 for carrying in the substrate. The substrate holder 316 is in close contact with an O-ring provided on the wall surface 314.
This portion functions as a load lock valve (becomes a second load lock valve). When the first load lock valve 313 is closed, the first load lock chamber 312 becomes an independent chamber, and the inside can be independently evacuated by the exhaust pump 317. The first load lock chamber 312 is provided with a vacuum gauge 319 for measuring the internal pressure.

  The film formation chamber 301 is connected to a pressure adjustment chamber 322 via a pressure adjustment valve 329. The pressure adjustment chamber 322 is connected to a vacuum pump 323, the exhaust is controlled by an exhaust valve 324, and a vacuum gauge 325 is used. Pressure is measured. In the pressure adjustment chamber 322, a fluoride target 327 made of magnesium fluoride is installed on the cathode 326, and a shutter 328 is provided to prevent contamination in the pressure adjustment chamber 322 when the magnetron cathode 326 is discharged. It has been.

  The film forming process in this example is the same as that in Example 1. Hereinafter, conveyance of the substrate 315 in the film formation chamber 301 will be described.

  First, the pressure adjustment chamber 322 is exhausted by the vacuum pump 323 by opening the exhaust valve 324. When the magnetron cathodes 306 and 309 of the film formation chamber 301 are discharged after the exhaust is completed, the pressure adjustment valve 329 is opened, and the Ar gas introduced into the film formation chamber 301 from the gas cylinder 304 is also introduced into the pressure adjustment chamber 327. . Thereafter, after the magnetron cathode 326 on which the fluoride target 327 made of magnesium fluoride is installed is discharged, the pressure adjustment valve 329 is closed. In the magnetron cathode 326, the discharge is continued, and an RF electric field of 250 W is applied to the magnetron cathode 326 so that the pressure in the pressure adjustment chamber 322 becomes higher than the pressure in the film formation chamber 301. The pressure is 3.5 Pa.

The film formation substrate 315 and the substrate holder 316 which are placed in close contact with the wall surface 314 by the transport mechanism 320 are moved to a position where the substrate 322 is located, and the film already formed on the substrate holder 316 is already formed at this position. Replace the substrate with a substrate that has not yet been deposited. Specifically, after the first load lock valve 313 is closed and the inside of the first load lock chamber 312 is sealed, nitrogen gas is introduced into the first load lock chamber 312 until atmospheric pressure is reached. When the atmospheric pressure is reached, the substrate 315 and the substrate holder 316 that are in close contact with the wall surface 314 are moved by the transport mechanism 320 to exchange the substrate on which the film is not formed and the substrate on which the film is formed. Thereafter, the substrate holder 316 is brought into close contact with the wall surface 314, and the first load lock chamber 312 is started to be exhausted by the vacuum pump 317 by opening the exhaust valve 318. The pressure in the first load lock chamber 319 is monitored by the vacuum gauge 319, and when the pressure in the first load lock chamber 312 becomes lower than the pressure in the film forming chamber 301, the exhaust valve 318 is closed. The first load lock valve 313 is opened. At the same time, the pressure adjustment valve 329 is also opened. The pressure in the film forming chamber 301 is 2 Pa before the first load lock valve 313 is opened, and this pressure should be maintained. Gas is caused to flow from the pressure adjustment chamber 322. At this time, the inflow amount is controlled by the pressure adjusting valve 329 so that the gas does not flow more than necessary. When the pressure in the film forming chamber 301 becomes 2 Pa, the pressure adjustment valve 329 is closed, the first load lock valve 313 is fully opened, and the magnesium fluoride target 307 installed on the magnetron cathode 306 is removed. Sputtered particles are formed, and a magnesium fluoride film is deposited on the substrate 315. After the predetermined film thickness is deposited, the first load lock valve 313 is closed.

  Thereafter, nitrogen gas is introduced into the first load lock chamber 312 until atmospheric pressure is reached. After the inside of the first load lock chamber becomes atmospheric pressure, the substrate 315 and the substrate holder 316 are detached from the wall surface 314 that is in close contact by the transfer mechanism 320, and the substrate that has not yet been formed and the substrate that has been formed are removed. After the replacement, the substrate holder 316 is brought into close contact with the wall surface 314 again, and the inside of the first load lock chamber 312 is exhausted by the vacuum pump 317. By repeating this operation, continuous film formation becomes possible.

In this embodiment, when the substrate is carried into the film formation chamber 301, the pressure adjustment valve 329 can be opened to adjust the pressure in the film formation chamber 301, so that continuous film formation under the same conditions is possible. .

  FIG. 5 shows a configuration diagram of an embodiment of a film forming apparatus according to the present invention. This film forming apparatus includes a film forming chamber 401 for performing a film forming process, a vacuum pump 402 for exhausting the film forming chamber 401, and a gas cylinder 404 for introducing a plasma discharge gas into the film forming chamber 401. . An exhaust valve 403 for controlling the exhaust in the film forming chamber 401 is provided between the film forming chamber 401 and the vacuum pump 402 and is opened and closed by an exhaust valve driving mechanism (not shown). A gas introduction valve 405 is provided between the film forming chamber 401 and the gas cylinder 404, and the gas introduction valve 405 is opened and closed by a gas introduction valve drive mechanism (not shown). The vacuum chamber 401 is provided with a magnetron cathode 406 for film formation and a metal fluoride target 407 made of magnesium fluoride, and from the magnetron cathode 409 and magnesium fluoride for supplying a fluorine component. A metal fluoride target 410 is also provided. A high frequency power source (RF) (not shown) is connected to the magnetron cathodes 406 and 409 in order to apply an electric field. The magnetron cathode 409 is provided with a shutter 411 so that a metal fluoride can be supplied without scattering into the film forming chamber 401, and the pressure inside the film forming chamber 401 can be measured. Is provided with a vacuum gauge 408.

A first load lock chamber 412 for replacing the substrate 415 is connected to the film formation chamber 401, and the substrate 415 can be formed in the film formation chamber 401 via the first load lock valve 413. Become. The first load lock chamber 412 is connected to a vacuum pump 417 for exhaust, and exhaust control is possible by an exhaust valve 418. The first load lock chamber 412 and the second load lock chamber 421 are connected via a part of the wall surface 414. The second load lock chamber 421 is provided with a transfer mechanism 420 and a substrate 422 to be formed next, so that the substrate can be transferred and exchanged inside the second load lock chamber 421. . The substrate holder 416 is in close contact with an O-ring provided on the wall surface 414, and this portion functions as a load lock valve (a second load lock valve). When the first load lock valve 413 is closed, the first load lock chamber 412 becomes an independent chamber, and the inside can be independently evacuated by the exhaust pump 417. The first load lock chamber 412 has a vacuum gauge 419 for measuring the internal pressure.
Is provided.

  Similarly, the second load lock chamber 421 can be evacuated independently by the vacuum pump 423 when the substrate holder 416 and the wall surface 414 are in close contact with each other and the third load lock valve 425 is closed. The exhaust control by the vacuum pump 423 inside the second load lock chamber 421 is controlled by opening and closing the exhaust valve 424, and the pressure in the second load lock chamber 421 is measured by the vacuum gauge 426.

  The film formation chamber 401 is connected to a pressure adjustment chamber 427 via a pressure adjustment valve 434, and the pressure adjustment chamber 427 is connected to a vacuum pump 428, the exhaust is controlled by an exhaust valve 429, and a vacuum gauge 430 is used. Pressure is measured. In the pressure adjusting chamber 427, a fluoride target 432 made of magnesium fluoride is installed on the magnetron cathode 431, and a shutter 433 is provided to prevent contamination in the chamber when the magnetron cathode 431 is discharged. Yes.

  The film forming process in this example is the same as that in Example 1. Hereinafter, transfer of the substrate 415 in the deposition chamber 401 will be described.

  First, the pressure adjustment chamber 427 is evacuated by the vacuum pump 428 by opening the exhaust valve 429. When the magnetron cathodes 406 and 409 in the film formation chamber 401 are discharged after the evacuation is completed, the pressure adjustment valve 434 is opened and the Ar gas introduced into the film formation chamber 401 from the gas cylinder 404 is also introduced into the pressure adjustment chamber 427. To do. Thereafter, after the magnetron cathode 431 provided with the fluoride target 432 made of magnesium fluoride is discharged, the pressure adjustment valve 434 is closed. The magnetron cathode 431 continues to discharge, and an RF electric field of 250 W is applied to the magnetron cathode 431 so that the pressure in the pressure adjustment chamber 434 is higher than the pressure in the film formation chamber 401, and the pressure in the pressure adjustment chamber 434 is 3 It is adjusted to be 5 Pa.

  The substrate on which the film is formed is carried in from the atmosphere outside the apparatus by opening the third load lock valve 425. At this time, the pressure in the second load lock chamber 421 is vented by nitrogen and becomes atmospheric pressure. After transporting the substrate to the position of the substrate 422 in the second load lock chamber 421, the third load lock valve 425 is closed, the exhaust valve 424 is opened, and the vacuum pump 423 is used to exhaust the second load lock chamber 421. I do. The pressure in the second load lock chamber 421 is constantly monitored by a vacuum gauge 426, and when the pressure becomes lower than the pressure in the first load lock chamber 421, the exhaust valve 424 is closed, The inside of the load lock chamber 421 is sealed.

  Thereafter, the substrate 415 and the substrate holder 416 installed in close contact with the wall surface 414 are moved by the transport mechanism 420 to a position where the substrate 422 is located, and the film mounted on the substrate holder 416 is formed at this position. The substrate is replaced with a substrate on which no film is formed yet. After replacing the substrate, the substrate holder 416 on which the substrate is mounted is brought into close contact with the wall surface 414 again. At this time, since the first load lock valve 413 is closed and is in a hermetically sealed state, no gas moves directly from the film formation chamber 401 to the second load lock chamber 421.

The first load lock chamber 412 starts to be exhausted by the vacuum pump 417 by opening the exhaust valve 418. The pressure in the first load lock chamber 412 is monitored by a vacuum gauge 419, and the exhaust valve 418 is closed when the pressure in the first load lock chamber 412 becomes lower than the pressure in the film forming chamber 401, The first load lock valve 413 is opened. At the same time, the pressure adjustment valve 434 is also opened. The pressure in the film forming chamber 401 is 2 Pa before the first load lock valve 413 is opened, and the pressure is maintained to maintain this pressure. Gas flows from the adjustment chamber 427. At this time, the inflow amount is controlled by the pressure adjusting valve 434 so that the gas does not flow more than necessary. When the pressure in the film formation chamber 401 becomes 2 Pa, the pressure adjustment valve 434 is closed, the first load lock valve 413 is fully opened, and the sputtered particles from the magnesium fluoride target 407 installed on the cathode 406 And a magnesium fluoride film is deposited on the substrate 415. After the predetermined film thickness is deposited, the first load lock valve 413 is closed.

  While this film formation is being performed, the substrate on the second load lock chamber 421 on which the film formation has been performed is replaced with the substrate on the outside of the apparatus that has not yet been formed. Is done. For this reason, the second load lock chamber 421 is vented with nitrogen gas until the same pressure as the atmospheric pressure is reached, and then the third load lock valve 425 is opened to form a film that exists in the atmosphere. Replace with a board that has not been replaced. After the substrate is replaced, the third load lock valve 425 is closed again, the exhaust valve 424 is opened with the inside of the second load lock chamber 421 sealed, and the second load lock chamber is opened by the vacuum pump 423. The exhaust in the 421 is performed. The substrate loading / unloading operation is performed by opening / closing a valve between these chambers and transferring the substrate, and by repeating this operation, continuous film formation is possible.

  In this embodiment, when the substrate is carried into the film formation chamber 401, the pressure adjustment valve 434 can be opened to adjust the pressure in the film formation chamber 401, so that continuous film formation under the same conditions is possible. .

Although the film forming apparatus has been described above, the substrate can be replaced by the mechanism similarly in the etching apparatus and the substrate cleaning apparatus.

It is a block diagram of the film-forming apparatus which concerns on Example 1 of this invention. It is a conceptual diagram of the film-forming apparatus which concerns on Example 3 of this invention. It is a conceptual diagram of the film-forming apparatus which concerns on Example 4 of this invention. It is a conceptual diagram of the film-forming apparatus which concerns on Example 5 of this invention. The present invention is a conceptual diagram of a film forming apparatus according to Embodiment 6. FIG.

Explanation of symbols

1 Vacuum chamber 2 Vacuum pump
3 Exhaust valve
4 Gas cylinder
5 Gas introduction valve 6 Magnetron cathode 7 Target 8 Vacuum gauge 9 Magnetron cathode 10 Target 11 Shutter 12 First load lock chamber 13 First load lock valve 14 Wall 15 Substrate 16 Substrate holder 17 Vacuum pump 18 Exhaust valve 19 Vacuum gauge 20 Transport mechanism 21 Second load lock chamber 22 Substrate 23 Vacuum pump 24 Exhaust valve 25 Third load lock valve 26 Vacuum gauge

Claims (15)

A film forming chamber connected to an exhaust system has a substrate and a cathode capable of generating plasma by applying an electric field to discharge, and a target made of a metal or a fluorine compound is placed on the cathode. In a film forming apparatus for installing and introducing a fluorine gas or a gas composed of a compound containing fluorine as necessary, and generating a plasma to form a fluorine compound film on a substrate,
A first load-lock chamber that can be evacuated to transfer and replace the substrate, and a second load-lock chamber that can be evacuated to transfer and replace the substrate to the first load-lock chamber are provided. A film forming apparatus.
In a film formation chamber connected to an exhaust system, a substrate and a cathode capable of generating plasma by applying an electric field to discharge are provided, and a target made of a solid compound is placed on the cathode. In a film forming apparatus for forming a solid compound on a substrate by generating plasma with the film forming chamber sealed,
A first load-lock chamber that can be evacuated to transfer and replace the substrate, and a second load-lock chamber that can be evacuated to transfer and replace the substrate to the first load-lock chamber are provided. A film forming apparatus.
3. The film forming apparatus according to claim 1, wherein the second load lock chamber is provided with a third load lock chamber capable of being evacuated for transferring and replacing the substrate. A film forming apparatus characterized by the above.
4. The film forming apparatus according to claim 1, wherein a load lock valve capable of moving the substrate is provided between the chambers, and when the load lock valve is opened, the exhaust gas in both chambers is exhausted. Is not carried out.
In any one of the film-forming apparatuses described in Claim 1 to 4,
A first load lock valve is provided between the film forming chamber and the first load lock chamber, and when the first load lock valve is opened, the pressure in the first load lock chamber is increased. A film forming apparatus characterized in that the pressure is lower than the pressure in the film chamber.
In any one of the film-forming apparatuses described in Claim 1-5,
A second load lock valve is provided between the first load lock chamber and the second load lock chamber, and when the second load lock valve is opened, 2. A film forming apparatus, wherein the pressure is lower than the pressure in the first load lock chamber.
In a film formation chamber connected to an exhaust system, a substrate and a cathode capable of generating plasma by applying an electric field to discharge are provided, and a target made of a solid compound is placed on the cathode. A film forming apparatus for forming a solid compound on a substrate by generating plasma in a state where the film forming chamber is sealed, and a first load-lock chamber capable of being evacuated to transport and replace the substrate; In the film forming apparatus in which the first load lock valve is provided between the first load lock chamber and the film forming chamber,
A film forming apparatus characterized in that when the first load lock valve is opened, the power applied to at least one of the cathodes is increased without exhausting both chambers.
In a film formation chamber connected to an exhaust system, a substrate and a cathode capable of generating plasma by applying an electric field to discharge are provided, and a target made of a solid compound is placed on the cathode. A film forming apparatus for forming a solid compound on a substrate by generating plasma in a state where the film forming chamber is sealed, and a first load-lock chamber capable of being evacuated to transport and replace the substrate; In the film forming apparatus in which the first load lock valve is provided between the first load lock chamber and the film forming chamber,
A pressure adjusting chamber is provided adjacent to the film forming chamber;
A pressure regulating valve is provided between the film forming chamber and the pressure regulating chamber, a dischargeable cathode and a solid compound are installed in the pressure regulating chamber, and an electric field is applied to the cathode to cause discharge. The pressure in the pressure adjusting chamber is set higher than the pressure in the film forming chamber,
The film forming apparatus, wherein the pressure adjusting valve is opened when or after the first load lock valve is opened.
In any one of the film-forming apparatuses described in Claim 1-7,
A pressure adjusting chamber is provided adjacent to the film forming chamber;
A pressure regulating valve is provided between the film forming chamber and the pressure regulating chamber, a dischargeable cathode and a solid compound are installed in the pressure regulating chamber, and an electric field is applied to the cathode to cause discharge. The pressure in the pressure adjusting chamber is set higher than the pressure in the film forming chamber,
The film forming apparatus, wherein the pressure adjusting valve is opened when or after the valve provided between the first load lock chamber and the film forming chamber is opened.
In the film-forming apparatus described in Claim 9,
A pressure gauge is provided in each of the film forming chamber and the pressure adjustment chamber, and the values of both pressure gauges are measured, and based on this, the open / close state of the pressure adjustment valve is adjusted. Deposition device.
In any 1 film-forming apparatus described in Claim 2-10,
The film forming apparatus, wherein the solid compound is a metal fluorine compound.
The film forming apparatus according to any one of claims 2 to 11,
A gas introduction valve for introducing a gas for discharging into the film forming chamber;
An exhaust valve for releasing the gas in the deposition chamber to the outside,
A film forming apparatus comprising a control mechanism for performing control to close a gas introduction valve and an exhaust valve when forming a film on the substrate.
13. The film forming apparatus according to claim 1, wherein when the first load lock valve provided between the film forming chamber and the first load lock chamber is opened, the film forming chamber is formed. The pressure inside is in the range of 0.1 to 100 Pa.
In any 1 film-forming apparatus described in Claim 1-13,
An etching apparatus comprising a mechanism for etching the substrate instead of the cathode for film formation inside the film formation chamber.
In any 1 film-forming apparatus described in Claim 1-13,
A substrate cleaning apparatus, wherein a mechanism for cleaning the substrate is provided in place of the cathode for film formation inside the film forming chamber.

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