JP2005255866A - Method for producing film-like adhesive material and use thereof - Google Patents
Method for producing film-like adhesive material and use thereof Download PDFInfo
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本発明は、半導体素子を支持部材に接着するのに用いるダイアタッチフィルム（ＤＡＦ）と呼ばれるフィルム接着材の製造方法、フィルム接着材およびそれを用いた半導体装置に関する。 The present invention relates to a method for manufacturing a film adhesive called a die attach film (DAF) used for bonding a semiconductor element to a support member, a film adhesive, and a semiconductor device using the same.
半導体素子を支持体に接着するのにダイアタッチフィルムと呼ばれるフィルム状接着材が使われている。このフィルム状接着剤は、従来のペースト状接着剤に比べ、厚みやはみ出しの制御性に優れていることから、チップサイズパッケージ、スタックパッケージ、システムインパッケージなどの高密度実装半導体パッケージにおいて多く利用されている。
近年では、高密度化を、チップやパッケージの多段積層で実現するために、チップの薄型化が加速しており、それに伴うＤＡＦの薄型化要求も高まっている。
A film adhesive called a die attach film is used to bond a semiconductor element to a support. This film adhesive is more widely used in high-density mounting semiconductor packages such as chip size packages, stack packages, and system-in packages because it has better controllability of thickness and protrusion than conventional paste adhesives. ing.
In recent years, in order to achieve high density by multi-layer stacking of chips and packages, the thinning of chips has been accelerated, and the accompanying demand for thinning of DAF has also increased.
一方で、樹脂のみで形成したＤＡＦよりフィラーを配合した方が、溶融粘度を調整できるので好ましい。更に、高温弾性率が向上し、吸湿率が低下するので耐リフロー性に優れるので好ましい。
しかし、一般の半導体パッケージ材料に用いられる無機フィラーは、粉砕物を分級したものや、破砕物を原料として溶融、分級したものであり、平均粒径は数μｍと低くても、数十μｍの粗大粒子を含んでおり、分級によりこれを除くことは困難である。ふるいにより粗大粒子をカットする方法もあるが、精密なふるいを作ることが困難で、数10μｍ程度以上の粒径のフィラーしかカットできない。
However, inorganic fillers used for general semiconductor packaging materials are those obtained by classifying pulverized products and those obtained by melting and classifying crushed materials as raw materials. Even if the average particle size is as low as several μm, it is several tens of μm. It contains coarse particles, and it is difficult to remove them by classification. Although there is a method of cutting coarse particles by sieving, it is difficult to make a precise sieve, and only fillers with a particle size of about several tens of μm or more can be cut.
本発明は、粗大粒子および分散不良による凝集粒子などの存在しないフィルム状接着材の製造方法、更には接着不良を起こさない半導体素子接着用フィルム状接着材を提供することを目的とする。 An object of the present invention is to provide a method for producing a film-like adhesive in which coarse particles and aggregated particles due to poor dispersion do not exist, and further provide a film-like adhesive for adhering semiconductor elements that does not cause adhesion failure.
本発明者等は鋭意検討した結果、本発明を完成した。
本発明は、次の（I）〜（IV）に記載の内容を包含する。
（I）半導体素子を接着するのに用いるフィラー含有フィルム状接着材の製造方法であって、フィラーを分散した接着材溶液を、該フィルム状接着材の接着材層厚みの８０％以上の粒径の粒子を、９０重量％以上捕捉できるフィルターでろ過したのち、支持基材上に塗布し、乾燥することを特徴とするフィルム状接着材の製造方法。
（II）フィラーの粒度分布において５０重量％粒径が２μｍ以下であり、９０重量％粒径が４μｍ以下であるフィラーを分散した接着材溶液を、フィルターの耐圧の範囲内でろ過したのち、乾燥後の接着材層厚みが5〜50μｍになるように支持基材上に塗布し、乾燥することを特徴とする（I）記載のフィルム状接着材の製造方法。
（III）フィラーがテトラエトキシシランから合成した溶融球状シリカであることを特徴とする（I）または（II）に記載のフィルム状接着材の製造方法。
（IV） （I）〜（III）いずれかに記載の方法で製造されたフィルム状接着材。
（V） （IV）記載のフィルム状接着材と半導体素子が接着してなることを特徴とする半導体装置。
As a result of intensive studies, the present inventors have completed the present invention.
The present invention includes the contents described in the following (I) to (IV).
(I) A method for producing a filler-containing film adhesive used for adhering semiconductor elements, wherein an adhesive solution in which filler is dispersed is treated with a particle size of 80% or more of the thickness of the adhesive layer of the film adhesive A film-like adhesive is produced by filtering the particles with a filter capable of capturing 90% by weight or more, applying the particles on a support substrate, and drying.
(II) An adhesive solution in which a filler having a 50% by weight particle size distribution of 2 μm or less and a 90% by weight particle size of 4 μm or less in the particle size distribution of the filler is filtered within the pressure resistance range of the filter, and then dried. The method for producing a film-like adhesive according to (I), wherein the adhesive layer is applied onto a supporting substrate so that the subsequent adhesive layer thickness is 5 to 50 μm and dried.
(III) The method for producing a film adhesive according to (I) or (II), wherein the filler is fused spherical silica synthesized from tetraethoxysilane.
(IV) A film-like adhesive produced by the method according to any one of (I) to (III).
(V) A semiconductor device comprising the film-like adhesive described in (IV) and a semiconductor element bonded thereto.
本発明の接着フィルムは、10μｍ厚でフィラーの突出がなく、チップ積層パッケージのチップ間に良好に使用でき、パッケージの薄型化に貢献できる。 The adhesive film of the present invention has a thickness of 10 μm and no filler protrusion, can be used favorably between chips of a chip stack package, and can contribute to the thinning of the package.
本発明では、まず接着材溶液にフィラーを十分分散させることが重要である。 In the present invention, it is important to first sufficiently disperse the filler in the adhesive solution.
フィラーは通常乾燥接着剤の70vol％程度以下含有させる。接着剤溶液は、コーターに適した粘度に接着剤溶液を調整する必要がある。コート方式にもよるが、この粘度は、数百〜数万ｃｐが適切である。また、以下で述べる分散方法で適切に扱える範囲の粘度であることも大切である。粘度調整は、溶剤で希釈すればよく、溶剤は、接着剤の樹脂成分を溶解できることが最低限必要で、分散やコーティングのハンドリングを考慮すると、沸点があまり低いものは扱いにくい傾向にある。
分散方法としては、粗攪拌の後、３本ロールやビーズミル、高速攪拌装置、超音波分散機、超高圧噴出（例えば（株）スギノマシンの超高圧対向衝突方式）などの公知の手法が適用できる。揮発性溶剤や吸湿性溶剤を使用する場合は、密閉系の分散装置や、乾燥環境での分散操作が好ましい。
The filler is usually contained in an amount of about 70 vol% or less of the dry adhesive. The adhesive solution needs to be adjusted to a viscosity suitable for the coater. Although depending on the coating method, this viscosity is suitably several hundred to several tens of thousands of cp. It is also important that the viscosity is in a range that can be properly handled by the dispersion method described below. The viscosity may be adjusted by diluting with a solvent. The solvent is required to be able to dissolve the resin component of the adhesive at a minimum. In consideration of dispersion and coating handling, those having a very low boiling point tend to be difficult to handle.
As a dispersion method, a known method such as a three-roll or bead mill, a high-speed stirring device, an ultrasonic dispersing machine, or an ultra-high pressure jet (for example, an ultra-high pressure opposed collision method of Sugino Machine Co., Ltd.) can be applied after rough stirring. . When a volatile solvent or a hygroscopic solvent is used, a closed dispersion apparatus or a dispersion operation in a dry environment is preferable.
フィラーを十分分散した後、フィルターで粗大粒子をろ過する。
フィラーの分散が不十分の場合は、ろ過での詰まりが発生する場合がある。
フィラーの選定が悪く、粗大粒子が多いと、フィルターがすぐ閉塞してしまい、フィルターのろ過面積を大きくしても容易に解決できない。
一般にフィラーの性能表示に記載される最大粒径は、粒度分布の累積重量８０〜１００％の粒径で表されることが多く、％オーダー以下で含有する粗大粒子が評価されていない。従って表示された最大粒径以上の粒子が存在するとフィルターに詰まり、本目的には不適切である。これらは、分級で除ききれない粗大粒子と推定される。
この観点から、フィラーの５０重量％が２μｍ以下であり、90重量％が４μｍ以下であるフィラーが好ましく、さらにテトラエトキシシランから合成される微粉の溶融球状シリカが、数μｍ大の粗大粒子を含んでいないので好ましい。市販品としては、龍森製１−ＦＸが挙げられる。
フィラーは、メモリー系半導体素子の動作に悪影響を与えないように、ウラン0.1ppb以下の低ウラングレードのものが好適である。
また、導電性や高熱伝導性を付与するために、窒化物、金属粉などを添加してもよい。フィラーの添加量は、接着性能、フィルムの折り曲げ性などを考慮すると好ましくは接着材層中1〜70体積％、より好ましくは1〜30体積％が好適である。
被着体への接着性を改良するためにカップリング剤でフィラーを前処理したり、接着材に添加してもよい。
After sufficiently dispersing the filler, coarse particles are filtered with a filter.
If the filler is not sufficiently dispersed, clogging may occur during filtration.
If the filler is poorly selected and there are many coarse particles, the filter will be clogged immediately, and even if the filtration area of the filter is increased, it cannot be solved easily.
In general, the maximum particle size described in the performance indication of the filler is often expressed by a particle size having a cumulative weight of 80 to 100% in the particle size distribution, and coarse particles contained in% order or less are not evaluated. Therefore, the presence of particles larger than the indicated maximum particle size clogs the filter and is inappropriate for this purpose. These are estimated to be coarse particles that cannot be removed by classification.
From this viewpoint, a filler in which 50% by weight of the filler is 2 μm or less and 90% by weight is 4 μm or less is preferable, and the fine fused spherical silica synthesized from tetraethoxysilane contains coarse particles having a size of several μm. This is preferable. As a commercial item, 1-FX made from Tatsumori is mentioned.
The filler is preferably a low uranium grade uranium of 0.1 ppb or less so as not to adversely affect the operation of the memory semiconductor device.
In addition, nitride, metal powder, or the like may be added in order to impart conductivity or high thermal conductivity. The amount of the filler added is preferably 1 to 70% by volume, more preferably 1 to 30% by volume in the adhesive layer in consideration of adhesive performance, film bendability and the like.
In order to improve the adhesion to the adherend, a filler may be pretreated with a coupling agent or added to the adhesive.
配線基板へチップを接着するのに用いられるＤＡＦは、基板凹凸を埋め込むために、基板凹凸深さやパターン、接着材の埋め込み能力にもよるが、少なくとも１５〜６０μｍ、より好ましくは２０〜５０μｍの厚みが好ましい。
また、主にチップ間に用いる薄型ＤＡＦの厚みは、２５μｍ以下３μｍ以上が好ましく、より好ましくは１５μｍ以下４μｍ以上である。チップ間に使用する場合は、チップ表面および裏面の平坦性が良好なので、ＤＡＦに大きな埋め込み特性は要求されず、前記の厚みで十分である。
The DAF used for bonding the chip to the wiring board has a thickness of at least 15 to 60 μm, more preferably 20 to 50 μm, depending on the depth of the substrate unevenness, the pattern, and the ability to embed the adhesive in order to embed the substrate unevenness. Is preferred.
The thickness of the thin DAF used mainly between the chips is preferably 25 μm or less and 3 μm or more, more preferably 15 μm or less and 4 μm or more. When used between chips, since the flatness of the front and back surfaces of the chip is good, a large embedding characteristic is not required for the DAF, and the above-mentioned thickness is sufficient.
接着材溶液をろ過するフィルターは、耐溶剤性のある材質が好ましい。
フィルターとしては、配線基板用途のＤＡＦでは、例えばアドバンテック東洋社製の１０〜２０μｍ粒子を９８％補足するポリプロピレンカートリッジフィルターや、チップ間用途のＤＡＦには例えばアドバンテック東洋社製の５〜１０μｍ粒子を９８％補足するポリプロピレンカートリッジフィルターなどが適用できる。
フィルターは、乾燥後の接着材層の厚みの８０％以上の粒径の粒子を９０重量％以上、好ましくは９５重量％以上捕捉できるフィルターを用いる。
The filter that filters the adhesive solution is preferably a solvent-resistant material.
As a filter, for a DAF for wiring board use, for example, a polypropylene cartridge filter supplementing 98% of 10-20 μm particles manufactured by Advantech Toyo Co., Ltd. For a DAF for use between chips, for example, 98 5-10 μm particles manufactured by Advantech Toyo Co., Ltd. is used. % Supplementary polypropylene cartridge filter can be applied.
As the filter, a filter capable of capturing 90% by weight or more, preferably 95% by weight or more of particles having a particle size of 80% or more of the thickness of the adhesive layer after drying is used.
但し、捕捉量は、ＪＩＳ Ｚ ８９０１（試験用粉体および試験用粒子）に準じ、分散水を２リットル／分の流量でろ過したときの値で評価する。
フィルム状接着材の接着材層の厚みの８０％以上の粒径の粒子を90重量％以上捕捉できるフィルターは、フィルターに表示されている補足特性と、接着材層の厚みから選定することができる。
However, the trapping amount is evaluated based on the value when the dispersed water is filtered at a flow rate of 2 liters / minute according to JIS Z 8901 (test powder and test particles).
A filter capable of capturing 90% by weight or more of particles having a particle size of 80% or more of the thickness of the adhesive layer of the film adhesive can be selected based on the supplemental characteristics displayed on the filter and the thickness of the adhesive layer. .
接着材は、公知のものが適用できる。例えばアクリル系樹脂、ポリイミド、ポリアミドイミド、ポリアミド、シリコーン樹脂などの熱可塑性高分子と、エポキシ樹脂（硬化剤含む）等の熱硬化成分を配合したものが好適である。
接着フィルムの製造方法は、まず、熱可塑性樹脂ワニス、熱硬化性樹脂ワニスなどからなる接着材を所定の割合で混合攪拌したのち、フィラーを添加しさらに撹拌し、これを、高速回転スクリュー付き分散機、３本ロール、ビーズミル、超音波分散機、超高圧対抗衝突などの分散手法でフィラーの凝集をとき分散性を改善する。
続いて、前記のフィルターでろ過し、さらに真空撹拌や真空下高速回転する穴つき皿にワニスを供給し脱泡工程をへて、均一にフィラーが分散し脱泡された接着材ワニスを得ることができる。
次いで、精密コーター等の塗布機を用いて、支持基材上に目標厚みになる様に、前記ワニスを塗布し、乾燥炉で溶剤を除去する。コーターヘッドにワニスを供給する流路に前記ろ過フィルターを取り付けると、異物除去の効果も期待できる。
As the adhesive, a known material can be applied. For example, a mixture of a thermoplastic polymer such as acrylic resin, polyimide, polyamideimide, polyamide, and silicone resin and a thermosetting component such as epoxy resin (including a curing agent) is preferable.
The manufacturing method of the adhesive film is as follows. First, an adhesive comprising a thermoplastic resin varnish, a thermosetting resin varnish, etc. is mixed and stirred at a predetermined ratio, then a filler is added and further stirred, and this is dispersed with a high-speed rotating screw. Dispersibility is improved when the filler is agglomerated by a dispersion method such as a three-roller, a bead mill, an ultrasonic disperser, or an ultrahigh-pressure collision.
Subsequently, the mixture is filtered with the above-mentioned filter, and further, the varnish is supplied to a dish with a hole that rotates at high speed under vacuum stirring or vacuum, and the defoaming step is performed to obtain a defoamed adhesive varnish uniformly dispersed. Can do.
Next, using a coating machine such as a precision coater, the varnish is applied on the supporting substrate so as to have a target thickness, and the solvent is removed in a drying furnace. When the filtration filter is attached to the flow path for supplying the varnish to the coater head, the effect of removing foreign matters can be expected.
接着材溶液を塗布する支持基材はシリコーン系などの剥離性表面処理を施したＰＥＴフィルムや、ポリプロピレンなどのポリオレフィンフィルムが接着材層との剥離特性、耐熱性の面で好適である。乾燥温度は、保存安定性、接着材の流動特性を考慮して、80〜120℃程度の低温で、溶剤を乾燥除去できる最低限の条件で実施することが好ましい。 As the support substrate to which the adhesive solution is applied, a PET film subjected to a peelable surface treatment such as silicone or a polyolefin film such as polypropylene is suitable in terms of peelability from the adhesive layer and heat resistance. In consideration of storage stability and flow characteristics of the adhesive, the drying temperature is preferably as low as about 80 to 120 ° C. under the minimum conditions that allow the solvent to be removed by drying.
半導体装置は、接着フィルムを半導体ウエハ裏面に加熱貼り付けし、ダイシングで接着フィルムまでチップと共に切断し、ピックアップ工程で接着材つきチップを取り上げ、ダイボンダーでチップ支持体に熱圧着し、ワイヤボンディング、樹脂封止、ハンダボール付け（表面実装型パッケージの場合）することにより製造することができる。
また、チップ支持体側に先に接着フィルムをチップとほぼ同じ大きさに切断、熱圧着し、そこにチップをマウントし、ワイヤボンディング、樹脂封止、ハンダボール付け（表面実装型パッケージの場合）することにより半導体装置を製造することもできる。
ほぼ同じサイズのチップを積層実装する場合に、スペーサを介して二つのチップを積層し、ワイヤボンディングのループの空間を確保する積層方法において、シリコン、金属箔、耐熱樹脂フィルムなどのスペーサ材の片面もしくは両面に本発明の接着材層を有するフィルムを貼り付け半導体装置を製造することもできる。
回路基板に直接ダイマウントして液状樹脂で封止して半導体装置を製造することもできる。
本発明の接着テープは、上記のような方法で組み立てられた半導体パッケージやメモリーカード、ＩＣカードや直接実装基板などに適用できる。
The semiconductor device heats and bonds the adhesive film to the backside of the semiconductor wafer, cuts the adhesive film together with the chip by dicing, picks up the chip with adhesive in the pick-up process, thermocompression-bonds to the chip support with a die bonder, wire bonding, resin It can be manufactured by sealing and soldering (in the case of a surface mount package).
In addition, the adhesive film is first cut to the same size as the chip on the chip support side, thermocompression bonded, the chip is mounted there, wire bonding, resin sealing, and solder ball attachment (in the case of a surface mount package). Thus, a semiconductor device can also be manufactured.
One side of spacer material, such as silicon, metal foil, heat-resistant resin film, etc., in the stacking method that stacks two chips via spacers and secures a wire bonding loop space when stacking and mounting chips of approximately the same size Alternatively, a semiconductor device can be manufactured by attaching a film having the adhesive layer of the present invention on both sides.
The semiconductor device can also be manufactured by die mounting directly on a circuit board and sealing with a liquid resin.
The adhesive tape of the present invention can be applied to a semiconductor package, a memory card, an IC card, a direct mounting substrate and the like assembled by the above method.
（接着材の合成）
（式１）の芳香族ジアミンと（式２）のシリコーンジアミン（東レ・ダウコーニング社製、アミノ価450）を（式３）の酸無水物と酸/ジアミンのモル比が1.02、式１のジアミンと式２のジアミンのモル比が44/56となるようにモノマーを秤量して、固形分35％となるように１−メチル−２−ピロリドン/１，３，５−トリメチルベンゼン＝7/3の溶媒に装入し、ディーンスターク管つきフラスコで170〜180℃で10時間脱水縮合して、ポリイミド溶液を得た。
（式１）
An aromatic diamine of (formula 1) and a silicone diamine of (formula 2) (made by Toray Dow Corning Co., Ltd., amino value 450) have an acid anhydride / acid / diamine molar ratio of (formula 3) of 1.02, The monomer was weighed so that the molar ratio of diamine to diamine of formula 2 was 44/56, and 1-methyl-2-pyrrolidone / 1,3,5-trimethylbenzene = 7 / The solution was charged in the solvent No. 3 and subjected to dehydration condensation at 170 to 180 ° C. for 10 hours in a flask with a Dean-Stark tube to obtain a polyimide solution.
(Formula 1)
（式２）
（式３）
(Formula 3)
一方、三井化学製の３官能エポキシ樹脂であるテクモア（登録商標）ＶＧ３１０１Ｌを１，３，５−トリメチルベンゼンに固形分60％になるように90℃で溶解した溶液および得られたポリイミド溶液と硬化剤として四国化成製キュアゾール２ＭＡＯＫ-ＰＷを、固形分重量として、ポリイミド/エポキシ/硬化剤＝100/20/0.8となるように配合攪拌し接着材溶液を得た。 On the other hand, Techmore (registered trademark) VG3101L, a trifunctional epoxy resin manufactured by Mitsui Chemicals, was dissolved in 1,3,5-trimethylbenzene at 90 ° C. to a solid content of 60%, and the resulting polyimide solution and curing Shikoku Kasei Curazole 2MAOK-PW was blended and stirred so that the solid weight was polyimide / epoxy / curing agent = 100/20 / 0.8 as an agent to obtain an adhesive solution.
（実施例１）
龍森製溶融シリカ１−ＦＸ（平均粒径0.3μｍ）を先に合成した接着材溶液に固形分換算で15体積％になるように配合した。
粘度約2000ｃｐとなるようにプラネタリーミキサーで攪拌調整して、ビーズミルにかけて分散し、ワニスを得た。
続いてアドバンテック東洋社製ＭＣＰ−１０−Ｃ１０Ｓ（ポリプロピレン製、有効ろ過面積550ｃｍ２、粒子捕捉効率：粒径10-20μｍの捕捉率９２％）、アドバンテック東洋社製ＭＣＰ−３−Ｃ１０Ｓ（ポリプロピレン製、有効ろ過面積600ｃｍ２、粒子捕捉効率：粒径5-10μｍの捕捉率９８％）の２種類のフィルターで、ワニスを10ｋｇろ過した。ワニスはいずれのフィルターも詰まらずにろ過できた。
ＭＣＰ−１０−Ｃ１０Ｓを通したワニスを乾燥厚み25μｍに、ＭＣＰ−３−Ｃ１０Ｓを通したワニスを乾燥厚み10μｍになるように支持基材（帝人デュポンフィルム製ビューレックスＡ３１、50μｍ厚）にコートし、乾燥温度110−120℃で乾燥して接着フィルムを製造した。
得られた接着フィルム表面を観察すると、どちらも粗大粒子の突出は観察されなかった。
（比較例１）
実施例１のシリカ分散接着材ワニスをろ過せずに実施例１と同じように、25および10μｍの乾燥厚みとなるようにコートしてフィルムを作った。得られた接着フィルム表面を観察すると、分散不良粒子、配合過程で混入したと推定される異物などの突出が観察された。
(Example 1)
Tatsumori fused silica 1-FX (average particle size 0.3 μm) was blended in the previously synthesized adhesive solution so as to be 15% by volume in terms of solid content.
Stirring was adjusted with a planetary mixer so that the viscosity was about 2000 cp, and the mixture was dispersed in a bead mill to obtain a varnish.
Subsequently, MCP-10-C10S (manufactured by Advantech Toyo Co., Ltd., made of polypropylene, effective filtration area 550 cm 2 , particle capture efficiency: 92% capture rate of particle size 10-20 μm), MCP-3-C10S (manufactured by Advantech Toyo Co., Ltd., made of polypropylene, 10 kg of varnish was filtered through two types of filters having an effective filtration area of 600 cm 2 and a particle trapping efficiency: trapping rate of 98% with a particle size of 5-10 μm. The varnish could be filtered without clogging any of the filters.
Coat the support base material (Burex A31 made by Teijin DuPont Film, 50 μm thick) so that the varnish passed through MCP-10-C10S has a dry thickness of 25 μm and the varnish passed through MCP-3-C10S has a dry thickness of 10 μm. The film was dried at a drying temperature of 110 to 120 ° C. to produce an adhesive film.
When the surface of the obtained adhesive film was observed, no protrusion of coarse particles was observed in either case.
(Comparative Example 1)
The silica-dispersed adhesive varnish of Example 1 was coated to a dry thickness of 25 and 10 μm as in Example 1 without filtration to form a film. When the surface of the obtained adhesive film was observed, protrusions such as poorly dispersed particles and foreign matters presumed to be mixed during the blending process were observed.
（比較例２）
シリカとして、龍森製溶融シリカＳＯ−Ｅ１（平均粒子径0.3μｍで、分級して作製した球状溶融シリカ）を固形分で15体積％になるように配合したもの以外は、実施例１と同様にして接着フィルムを製造した。ワニスはいずれのフィルターでも100ｇ程度で詰まってしまったので、ろ過をせずにコートしたところ接着フィルムは、粗大粒子の突出が多数観察された。
(Comparative Example 2)
Except for silica fused with Tatsumori fused silica SO-E1 (spherical fused silica produced by classification with an average particle size of 0.3 μm) so that the solid content is 15% by volume, the same as in Example 1. Thus, an adhesive film was produced. The varnish was clogged with about 100 g in any filter, and when coated without filtration, a large number of coarse particles were observed on the adhesive film.
（実施例２および比較例２）
厚さ200μｍ厚に研削したシリコンウエハを120℃に加熱したホットステージの上に置き、ウエハ裏面に実施例１および比較例１で製造したフィルムの表面側をローラーで押してはりつけた。ホットステージから下ろし、ＰＥＴをはがし、ウエハ外周でフィルムを切った。接着材を観察したところ、実施例１のフィルムでは、良好に接着していたが、比較例１のフィルムの粒子突出部では気泡を巻き込み良い接着が出来ていなかった。
この接着材付きウエハをダイシングテープに固定して、８ｍｍ角にダイシングして、接着材付きチップを作った。
銅板上に、25μｍ厚テープつきチップを160℃、0.1ＭＰａ、1ｓの条件で接着し、さらにそのチップ上に10μｍ厚テープつきチップを同じ条件で接着した。
この積層品を、封止樹脂で175℃、10ＭＰａ、3分の条件で金型中で封止した。さらに175℃、4ｈ硬化を進めた。この模擬半導体パッケージを超音波顕微鏡で観察したところ、粒子突出部で気泡を巻き込み良い接着が出来ていなかった部分は、剥離が観察された。
(Example 2 and Comparative Example 2)
A silicon wafer ground to a thickness of 200 μm was placed on a hot stage heated to 120 ° C., and the surface of the film produced in Example 1 and Comparative Example 1 was pressed against the wafer back surface by a roller. The film was removed from the hot stage, the PET was peeled off, and the film was cut around the wafer periphery. As a result of observing the adhesive, the film of Example 1 was well bonded, but the particles protruding part of the film of Comparative Example 1 was not able to bond well with air bubbles.
This wafer with adhesive was fixed to a dicing tape and diced to 8 mm square to make a chip with adhesive.
A chip with a 25 μm thick tape was bonded on a copper plate under the conditions of 160 ° C., 0.1 MPa, 1 s, and a chip with a 10 μm thick tape was bonded on the chip under the same conditions.
This laminate was sealed in a mold with a sealing resin at 175 ° C., 10 MPa, for 3 minutes. Furthermore, 175 ° C, 4h curing proceeded. When this simulated semiconductor package was observed with an ultrasonic microscope, peeling was observed in a portion where air bubbles were entrained at the particle protruding portion and good adhesion was not achieved.
Claims (5)
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007184563A (en) * | 2005-12-05 | 2007-07-19 | Hitachi Chem Co Ltd | Method for filtering paste for semiconductor, paste for semiconductor, method for producing paste for semiconductor, and semiconductor device |
| JP2008045011A (en) * | 2006-08-14 | 2008-02-28 | Nitto Denko Corp | Adhesive sheet, method for producing the same and method for cutting laminated ceramic sheet |
| JP2010084121A (en) * | 2008-09-04 | 2010-04-15 | Hitachi Chem Co Ltd | Photosensitive adhesive composition, film-shape adhesive, adhesive sheet, and laminate element |
| JP2011062581A (en) * | 2009-09-15 | 2011-03-31 | Hitachi Chem Co Ltd | Apparatus and method of producing liquid dispersion |
| JP2013077701A (en) * | 2011-09-30 | 2013-04-25 | Canon Inc | Electronic component, electronic apparatus and manufacturing methods therefor |
| WO2015156254A1 (en) * | 2014-04-07 | 2015-10-15 | 日本ゼオン株式会社 | Production method for thermally conductive pressure-sensitive adhesive laminated sheet, thermally conductive pressure-sensitive adhesive laminated sheet, and electronic device |
| WO2015156257A1 (en) * | 2014-04-07 | 2015-10-15 | 日本ゼオン株式会社 | Production method for thermally conductive pressure-sensitive adhesive laminated sheet, thermally conductive pressure-sensitive adhesive laminated sheet, and electronic device |
| CN111066137A (en) * | 2017-09-15 | 2020-04-24 | 琳得科株式会社 | Film-like fired material and film-like fired material with support sheet |
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| JPH11228892A (en) * | 1997-10-31 | 1999-08-24 | Seiren Co Ltd | Production of aqueous dispersion ink for ink jet recording |
| JP2000265144A (en) * | 1999-03-16 | 2000-09-26 | Sumitomo Bakelite Co Ltd | Die attach paste |
| JP2004051970A (en) * | 2002-05-30 | 2004-02-19 | Mitsui Chemicals Inc | Adhesive resin composition and film adhesive using it |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH11228892A (en) * | 1997-10-31 | 1999-08-24 | Seiren Co Ltd | Production of aqueous dispersion ink for ink jet recording |
| JP2000265144A (en) * | 1999-03-16 | 2000-09-26 | Sumitomo Bakelite Co Ltd | Die attach paste |
| JP2004051970A (en) * | 2002-05-30 | 2004-02-19 | Mitsui Chemicals Inc | Adhesive resin composition and film adhesive using it |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007184563A (en) * | 2005-12-05 | 2007-07-19 | Hitachi Chem Co Ltd | Method for filtering paste for semiconductor, paste for semiconductor, method for producing paste for semiconductor, and semiconductor device |
| JP2008045011A (en) * | 2006-08-14 | 2008-02-28 | Nitto Denko Corp | Adhesive sheet, method for producing the same and method for cutting laminated ceramic sheet |
| JP2010084121A (en) * | 2008-09-04 | 2010-04-15 | Hitachi Chem Co Ltd | Photosensitive adhesive composition, film-shape adhesive, adhesive sheet, and laminate element |
| JP2011062581A (en) * | 2009-09-15 | 2011-03-31 | Hitachi Chem Co Ltd | Apparatus and method of producing liquid dispersion |
| JP2013077701A (en) * | 2011-09-30 | 2013-04-25 | Canon Inc | Electronic component, electronic apparatus and manufacturing methods therefor |
| WO2015156254A1 (en) * | 2014-04-07 | 2015-10-15 | 日本ゼオン株式会社 | Production method for thermally conductive pressure-sensitive adhesive laminated sheet, thermally conductive pressure-sensitive adhesive laminated sheet, and electronic device |
| WO2015156257A1 (en) * | 2014-04-07 | 2015-10-15 | 日本ゼオン株式会社 | Production method for thermally conductive pressure-sensitive adhesive laminated sheet, thermally conductive pressure-sensitive adhesive laminated sheet, and electronic device |
| CN111066137A (en) * | 2017-09-15 | 2020-04-24 | 琳得科株式会社 | Film-like fired material and film-like fired material with support sheet |
| CN111066137B (en) * | 2017-09-15 | 2023-10-13 | 琳得科株式会社 | Film-shaped firing material and film-shaped firing material with support sheet |
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