JP2005244111A - FILM FORMING METHOD, SiO2 FILM, ELECTRONIC PART AND ELECTRONIC EQUIPMENT - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film forming method capable of easily forming an SiO<SB>2</SB>film having a specified pattern at a low cost, the SiO<SB>2</SB>film formed by the film forming method and an electronic part and electronic equipment having the SiO<SB>2</SB>film. <P>SOLUTION: The film forming method forms the second interlayer insulating layer (the SiO<SB>2</SB>film) 5 having the specified pattern. The film forming method mainly has a first process in which a polyorganosiloxane film composed of polyorganosiloxane is formed, a second process in which a first SiO<SB>2</SB>formation treatment is carried out to a region corresponding to the specified pattern of the polyorganosiloxane film and polyorganosiloxane existing in the region is changed into SiO<SB>2</SB>. The film forming method further has a third process in which the region changed into SiO<SB>2</SB>is removed by an alkaline solution, and a fourth process in which a second SiO<SB>2</SB>formation treatment is carried out to the polyorganosiloxane film remaining in the third process and the second interlayer insulating layer 5 is obtained by changing polyorganosiloxane into SiO<SB>2</SB>. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a film forming method, a SiO ₂ film, an electronic component, and an electronic device.

Conventionally, the SiO ₂ film having a predetermined pattern is formed as follows (for example, see Patent Document 1).
That is, first, a film composed of SiO ₂ is formed so as to cover the surface of the substrate. Next, a resist layer having a shape corresponding to the shape of the target SiO ₂ film is formed on this film. Next, unnecessary portions of the coating are removed by etching using the resist layer as a mask. Finally, the resist layer is stripped with a resist stripping solution.
However, the formation of the resist layer requires a multi-step process such as supply of a resist material onto a substrate, drying, baking, exposure, development, washing, and drying.
Such a process is extremely complicated, and conventionally, it takes time and labor to form a SiO ₂ film having a predetermined pattern.

JP-A-11-176799 (FIG. 6)

An object of the present invention provides an electronic component and an electronic apparatus comprising a film forming method capable of forming easily and inexpensively an SiO ₂ film having a predetermined pattern, SiO ₂ film formed by such a film forming method, the SiO ₂ film There is.

Such an object is achieved by the present invention described below.
The film forming method of the present invention is a film forming method for forming a SiO ₂ film having a predetermined pattern,
A first step of forming a polyorganosiloxane film composed mainly of polyorganosiloxane;
A _second step of subjecting the region corresponding to the predetermined pattern of the polyorganosiloxane film to a first SiO ₂ treatment to change the polyorganosiloxane present in the region to SiO ₂ ;
A third step of removing the region changed to SiO ₂ with an alkaline solution;
A fourth step of obtaining the SiO ₂ film by subjecting the polyorganosiloxane film remaining in the third step to a second SiO ₂ treatment to change the polyorganosiloxane to SiO ₂ ; It is characterized by having.
Thereby, the SiO ₂ film having a predetermined pattern can be formed easily and inexpensively.

In the film forming method of the present invention, in the first step, the polyorganosiloxane film is preferably formed by a plasma polymerization method.
According to the plasma polymerization method, a polyorganosiloxane film having a uniform and uniform film thickness can be easily formed.
In the film forming method of the present invention, it is preferable that the polyorganosiloxane is mainly composed of a dialkyl silicone.
As a result, the polyorganosiloxane film can be converted into SiO ₂ more easily and reliably.

In the film forming method of the present invention, in the second step, the first SiO ₂ treatment is preferably performed by at least one of ultraviolet irradiation and plasma irradiation.
According to this method, the bond between the organic group of the polyorganosiloxane and Si can be more reliably cut, and oxygen atoms can be introduced, that is, SiO ₂ can be converted more reliably.

In the film forming method of the present invention, in the third step, the pH of the alkaline solution is preferably 9 or more.
Thereby, efficient removal of SiO ₂ becomes possible.
In the film-forming method of this invention, it is preferable in the said 3rd process that the temperature of the said alkaline solution is 0-100 degreeC.
In such a temperature range, the SiO ₂ removal efficiency (etching rate) is further improved.

In the film forming method of the present invention, prior to the fourth step, the polyorganosiloxane film remaining in the third step has a step of performing at least one of a water washing treatment and an acid treatment. Is preferred.
As a result, the obtained SiO ₂ film becomes more reliable.
In the film forming method of the present invention, in the fourth step, the second SiO ₂ treatment is preferably performed by at least one of ultraviolet irradiation and plasma irradiation.
According to this method, the bond between the organic group of the polyorganosiloxane and Si can be more reliably cut, and oxygen atoms can be introduced, that is, SiO ₂ can be converted more reliably.

The SiO ₂ film of the present invention is formed by the film forming method of the present invention.
Thereby, a highly reliable SiO ₂ film can be obtained more easily and cheaply.
The electronic component of the present invention is characterized by including the SiO ₂ film of the present invention.
Thereby, a highly reliable electronic component can be obtained more easily and cheaply.
The electronic device of the present invention includes the electronic component of the present invention.
As a result, a highly reliable electronic device can be obtained.

Hereinafter, a film forming method, a SiO ₂ film, an electronic component, and an electronic apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
Below, the case where the electronic component of this invention is applied to a wiring board is demonstrated as a representative.
FIG. 1 is a longitudinal sectional view showing an embodiment of a wiring board, and FIGS. 2 and 3 are views (longitudinal sectional views) for explaining a method of manufacturing the wiring board shown in FIG. In the following description, the upper side in FIGS. 1 to 3 is referred to as “upper” and the lower side is referred to as “lower”.

A wiring substrate 1 shown in FIG. 1 includes a first interlayer insulating film 3, a first wiring layer 4, a second interlayer insulating film (SiO ₂ film of the present invention) 5 and a second wiring layer on a substrate 2. 6 are stacked in this order. Further, a connection hole (through hole) 50 penetrating in the thickness direction is formed in the second interlayer insulating film 5, and the first wiring layer 4 is connected via the connection portion 7 provided in the connection hole 50. And the second wiring layer 6 are electrically connected.

The substrate 2 is made of, for example, silicon such as polycrystalline silicon and amorphous silicon, various semiconductor materials such as germanium and gallium arsenide, various glass materials, various resin materials, and the like.
The first interlayer insulating layer 3 is, for example, an inorganic insulating material such as an oxide such as SiO ₂ or a nitride such as SiN or TiN, or an organic insulating material such as a polyolefin resin, a polyamide resin, or a phenol resin. It consists of
The first wiring layer 4, the second wiring layer 6, and the connection portion 7 are each made of, for example, Au, Ag, Pt, Cu, Ni, Al, or an alloy containing these.
Such a wiring board 1 can be manufactured as follows, for example.

[1] First, as shown in FIG. 2A, the first interlayer insulating layer 3 is formed on the upper surface of the substrate 2.
The first interlayer insulating film 3 is, for example, a dry process such as a chemical vapor deposition method (CVD) such as a thermal oxidation method, plasma CVD, thermal CVD, or laser CVD, vacuum deposition, sputtering (low temperature sputtering), or ion plating. It can be formed by a plating method, a wet plating method such as electrolytic plating or electroless plating, a thermal spraying method, a sol-gel method, a MOD method, or the like.
When a Si substrate is used as the substrate 2 and a SiO ₂ layer is formed as the first interlayer insulating layer 3, a thermal oxidation method is preferably used for forming the first interlayer insulating layer 3. According to the thermal oxidation method, it is possible to easily form a SiO ₂ layer having a uniform and uniform thickness.

[2] Next, as shown in FIG. 2B, a first wiring layer 4 having a predetermined pattern is formed on the first interlayer insulating layer 3.
The first wiring layer 4 can be formed by first forming a metal film so as to cover the first interlayer insulating layer 3 and then removing unnecessary portions of the metal film.
For the formation of the metal film, for example, bonding of metal foil or the like can be used in addition to the dry plating method and the wet plating method as described above.
Further, as a method for removing the metal film, for example, one or two of a physical etching method such as plasma etching, reactive ion etching, beam etching, and light assisted etching, and a chemical etching method such as wet etching are used. A combination of the above can be used.

[3] Next, a second interlayer insulating layer (SiO ₂ film having a predetermined pattern) 5 that covers the first wiring layer 4 and has the connection hole 50 is formed. The film forming method of the present invention is applied to the formation of the second interlayer insulating layer 5.
[3-1] First, as shown in FIG. 2 (c), a polyorganosiloxane film mainly composed of polyorganosiloxane on the first interlayer insulating layer 3 so as to cover the first wiring layer 4. 51 is formed (first step).
Examples of the method for forming the polyorganosiloxane film 51 include a plasma polymerization method, a vapor deposition method, a treatment with a silane coupling agent, a treatment with a liquid material containing a polyorganosiloxane, and the like. Alternatively, two or more kinds can be used in combination.

  Among these, as a method for forming the polyorganosiloxane film 51, it is preferable to use a plasma polymerization method. In this plasma polymerization method, organosiloxane (precursor of polyorganosiloxane) is supplied in a gaseous form together with a carrier gas so as to cover the first wiring layer 4 on the first interlayer insulating layer 3, and by plasma polymerization In this method, the polyorganosiloxane film 51 is formed.

According to the plasma polymerization method, the polyorganosiloxane film 51 having a uniform and uniform film thickness can be easily formed.
Examples of the polyorganosiloxane include dialkyl silicones such as dimethyl silicone and diethyl silicone, cycloalkyl silicones, and the like, and one or more of these can be used.

Among these, as the polyorganosiloxane, those having a dialkyl silicone (particularly, dimethyl silicone) as a main component are suitable. The polyorganosiloxane film 51 containing dialkyl silicone as a main component can be easily formed by the plasma polymerization method described above. Further, by constituting the polyorganosiloxane film 51 with a dialkyl silicone as a main component, it is possible to make it easier and more sure to be SiO _{2 in} the next step [3-2] and the subsequent step [3-5].

In the case where the polyorganosiloxane film 51 containing dimethyl silicone as a main component is formed using a plasma polymerization method, examples of the raw material (precursor) include methylpolysiloxane, octamethyltrisiloxane, decamethyltetrasiloxane. , Decamethylcyclopentasiloxane, octamethylcyclotetrasiloxane, methylphenylpolysiloxane and the like can be used alone or in combination.
Examples of the carrier gas (added gas) include argon, helium, nitrogen, and the like.

Moreover, when forming the polyorganosiloxane film | membrane 51 by a plasma polymerization method, the formation conditions (film-forming conditions) can be as follows, for example.
The high frequency output is preferably about 100 to 1000 W.
The pressure in the chamber during film formation is preferably about 1 × 10 ^{−4 to} 1 Torr.
The raw material gas flow rate is preferably about 1 to 100 sccm. On the other hand, the carrier gas flow rate is preferably about 10 to 500 sccm.
The treatment time is preferably about 1 to 10 minutes, more preferably about 4 to 7 minutes.
By appropriately setting such conditions, the polyorganosiloxane film 51 having a desired average thickness can be formed.

[3-2] Next, as shown in FIG. 2D, a predetermined pattern region 510 (in this embodiment, the connection hole 50 (target SiO ₂ film pattern) of the obtained polyorganosiloxane film 51 is used. ) Is subjected to a first SiO ₂ treatment. Thus, the polyorganosiloxane present in the region 510 is changed to SiO ₂ (second step).
Examples of the first SiO ₂ treatment include ultraviolet irradiation, plasma irradiation, electron beam irradiation, heating, and the like, and one or more of these can be used in combination.
Among these, it is preferable to use at least one of ultraviolet irradiation and plasma irradiation as the first SiO ₂ conversion treatment. According to this method, the bond between the organic group of the polyorganosiloxane and Si can be more reliably cut, and oxygen atoms can be introduced, that is, SiO ₂ can be converted more reliably.

A: When UV irradiation is used as the first SiO ₂ treatment, the wavelength of the UV may be 400 nm or less, and is not particularly limited, but is preferably about 100 to 350 nm.
UV intensity is preferably in the range of about 1000~3000mJ / cm ^2, more preferably about 1400~2600mJ / cm ^2.

The atmosphere for ultraviolet irradiation may be either in the air or in a reduced pressure state, but is preferably in the air. As a result, oxygen atoms are efficiently introduced from oxygen molecules present in the atmosphere almost simultaneously with the cleavage of the organic group and Si, so that the polyorganosiloxane can be changed to SiO ₂ more quickly. .
Moreover, it is preferable that the irradiation time of an ultraviolet-ray is about 1 to 10 minutes, and it is more preferable that it is about 3 to 7 minutes.

B: When oxygen plasma irradiation is used as the first SiO ₂ conversion treatment Examples of the gas species for generating plasma include oxygen gas, nitrogen gas, inert gas (argon gas, helium gas, etc.), etc. 1 type or 2 types or more can be used in combination.
The high-frequency output is preferably about 100 to 700 W, and more preferably about 300 to 500 W.
The gas flow rate is preferably about 10 to 500 sccm, and more preferably about 100 to 300 sccm.

Note that the atmosphere in which plasma irradiation is performed may be in the air or in a reduced pressure state, but is preferably in the air. As a result, oxygen atoms are efficiently introduced from oxygen molecules present in the atmosphere almost simultaneously with the cleavage of the organic group and Si, so that the polyorganosiloxane can be changed to SiO ₂ more quickly. .
In particular, for plasma irradiation, it is preferable to use oxygen plasma irradiation using a gas containing oxygen gas as a gas species for generating plasma. According to the oxygen plasma irradiation, since the oxygen plasma cuts the organic group and Si and is used for bonding with Si, the polyorganosiloxane can be changed to SiO ₂ more reliably.

[3-3] Next, as shown in FIG. 3E, the predetermined region 510 changed to SiO ₂ is removed with an alkaline solution (third step).
Polyorganosiloxane is a compound having relatively high alkali resistance, but SiO ₂ is less resistant to alkali than polyorganosiloxane. For this reason, by treating the polyorganosiloxane film 51 with an alkaline solution, the predetermined region 510 changed to SiO ₂ is selectively removed, and the hole 500 to be the connection hole 50 is formed in the next step [3-5]. Is done.

The alkali solution is not particularly limited as long as it is difficult to etch (remove) polyorganosiloxane and can efficiently remove SiO _2. For example, an alkali metal hydroxide such as NaOH or KOH can be used. Aqueous solutions, aqueous solutions of alkaline earth metal hydroxides such as Mg (OH) ₂ , aqueous solutions of tetramethylammonium hydroxide, amides such as N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMA) Organic organic solvents and the like, and these can be used alone or in combination.
Among these, as the alkali solution, an aqueous solution of an alkali metal hydroxide is particularly preferable. By using such an alkaline solution, SiO ₂ can be efficiently removed without substantially removing the polyorganosiloxane film 51.

The pH of the alkaline solution is preferably 9 or more, more preferably about 9.5 to 11.5. If the pH of the alkaline solution is too low, efficient removal of SiO ₂ may be difficult. On the other hand, even if the pH of the alkaline solution exceeds the upper limit, an increase in the effect is expected. Can not.
Moreover, it is preferable that the temperature of an alkaline solution is about 0-100 degreeC, and it is more preferable that it is about 15-75 degreeC. In such a temperature range, the SiO ₂ removal efficiency (etching rate) is further improved.

[3-4] Next, at least one of a water washing treatment and an acid treatment is performed on the polyorganosiloxane film 51 remaining after the step [3-3]. Thereby, the alkaline solution (basic substance) remaining in or on the surface of the polyorganosiloxane film 51 can be removed or neutralized. As a result, the reliability of the obtained second interlayer insulating film 5 (wiring substrate 1) can be further improved.
Here, examples of the acid treatment include treatment with hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, or a mixture thereof.
In addition, you may make it perform a water washing process and an acid process alternately, for example.

[3-5] Next, as shown in FIG. 3F, the polyorganosiloxane film 51 is subjected to a _second SiO ₂ treatment. Thus, by changing the polyorganosiloxane SiO _2, the second interlayer insulating film (SiO ₂ film) having a connection hole 50 to obtain the 5 (fourth step).
Second SiO ₂ treatment, because it can be made of SiO ₂ of more reliably, as in the first SiO ₂ processing in the step [3-2], by at least one of UV irradiation and plasma irradiation It is preferred to do so.

Note that the second SiO ₂ treatment may be performed under the same conditions as the first SiO ₂ treatment, or may be performed under different conditions, but the second SiO ₂ treatment may be performed differently from the first SiO ₂ treatment. It is preferable to set the conditions suitable for the SiO ₂ conversion treatment of No. ₂ .
As described above, according to the present invention, since it is not necessary to use a resist layer when forming the SiO ₂ film, the number of manufacturing steps can be greatly reduced, that is, the manufacturing cost and time can be reduced. it can.

[4] Next, as shown in FIG. 3G, the connection portion 7 that contacts a part of the first wiring layer 4 is formed in the connection hole 50.
The connecting portion 7 first supplies the conductive material so as to fill the connection hole 50 and cover the second insulating layer 5, and then the conductive material is removed from the second interlayer insulating layer 5. It can be formed by removing until the upper surface is exposed.
For example, the above-described dry plating method, wet plating method, or the like can be used to supply the conductive material.
As a method for removing the conductive material, for example, a physical etching method, a chemical etching method, or the like as described above can be used.

[5] Next, as shown in FIG. 3 (h), the second wiring layer 6 having a predetermined pattern partly in contact with the connection portion 7 is formed.
The second wiring layer 6 can be formed by first forming a metal layer so as to cover the second interlayer insulating layer 5 and then removing unnecessary portions of the metal film.
The metal layer can be formed by using, for example, bonding of metal foil in addition to the dry plating method and the wet plating method as described above.
Further, as a method for removing the metal layer, for example, the physical etching method, the chemical etching method, or the like as described above can be used.
The wiring board 1 is manufactured through the above steps.

<Electronic equipment>
The wiring board (electronic component of the present invention) 1 as described above can be applied to various electronic devices.
FIG. 4 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.

In this figure, a personal computer 1100 includes a main body 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display. The display unit 1106 is rotatable with respect to the main body 1104 via a hinge structure. It is supported by.
The wiring board 1 as described above is built in, for example, as a switching element for switching each pixel of the display unit, a flexible wiring board for connecting the main body 1104 and the display unit 1106, or the like.

FIG. 5 is a perspective view showing a configuration of a mobile phone (including PHS) to which the electronic apparatus of the present invention is applied.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204 and a mouthpiece 1206, and a display unit.
The wiring board 1 as described above is incorporated as, for example, a switching element for switching each pixel of the display unit, a semiconductor component (various memories) for storing data, a circuit board, and the like.

FIG. 6 is a perspective view showing the configuration of a digital still camera to which the electronic apparatus of the present invention is applied. In this figure, connection with an external device is also simply shown.
Here, an ordinary camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an imaging device such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

A display unit is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD, and functions as a finder that displays an object as an electronic image.
A circuit board 1308 is installed inside the case. The circuit board 1308 is provided with a memory that can store (store) an imaging signal.

A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side of the case 1302 (on the back side in the illustrated configuration).
When the photographer confirms the subject image displayed on the display unit and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory of the circuit board 1308.

In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the data communication input / output terminal 1314 as necessary. Further, the imaging signal stored in the memory of the circuit board 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.
The wiring board 1 as described above is built in, for example, as a switching element for switching each pixel of the display unit, a semiconductor component (various memories) for storing CCD image pickup signals, a circuit board 1308, and the like.

In addition to the personal computer (mobile personal computer) in FIG. 4, the mobile phone in FIG. 5, and the digital still camera in FIG. 6, the electronic apparatus of the present invention includes, for example, a television, a video camera, a viewfinder type, Monitor direct-view video tape recorder, laptop personal computer, car navigation system, pager, electronic notebook (including communication function), electronic dictionary, calculator, electronic game device, word processor, workstation, video phone, security TV Monitors, electronic binoculars, POS terminals, devices equipped with touch panels (for example, cash dispensers and automatic ticket vending machines for financial institutions), medical devices (for example, electronic thermometers, blood pressure monitors, blood glucose meters, electrocardiographs, ultrasound diagnostic devices, internal Endoscope display device), fish finder, various measuring instruments, Vessels such (e.g., gages for vehicles, aircraft, and ships), a flight simulator, various monitors, and a projection display such as a projector.
The film forming method, the SiO ₂ film, the electronic component, and the electronic device according to the present invention have been described based on the illustrated embodiments. However, the present invention is not limited to these.
The SiO ₂ film of the present invention can be applied to, for example, an interlayer insulating film of a thin film transistor, a gate insulating film, etc. in addition to the wiring substrate (electronic component) as described above.

It is a longitudinal cross-sectional view which shows embodiment of a wiring board. It is a figure (longitudinal sectional drawing) for demonstrating the manufacturing method of the wiring board shown in FIG. It is a figure (longitudinal sectional drawing) for demonstrating the manufacturing method of the wiring board shown in FIG. It is a perspective view which shows the structure of a mobile type personal computer. It is a perspective view which shows the structure of a mobile telephone (PHS is also included). It is a perspective view which shows the structure of a digital still camera.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wiring board 2 ... Board 3 ... 1st interlayer insulation layer 4 ... 1st wiring layer 5 ... 2nd interlayer insulation layer 50 ... Connection hole 51 ... Polyorganosiloxane film 500 ... Hole 510 ... Area 6 ... Second wiring layer 7 ... Connection part 1100 ... Personal computer 1102 ... Keyboard 1104 ... Body part 1106 ... Unit 1200 ... Telephone 1202 ... Button 1204 ... Earpiece 1206 …… Mouthpiece 1300 …… Digital still camera 1302 …… Case 1304 …… Unit 1306 …… Shutter button 1308 …… Substrate 1312 …… Terminal 1314 …… Terminal 1430 …… TV monitor 1440 …… Personal computer

Claims (11)

A film forming method for forming a SiO ₂ film having a predetermined pattern,
A first step of forming a polyorganosiloxane film composed mainly of polyorganosiloxane;
A _second step of subjecting the region corresponding to the predetermined pattern of the polyorganosiloxane film to a first SiO ₂ treatment to change the polyorganosiloxane present in the region to SiO ₂ ;
A third step of removing the region changed to SiO ₂ with an alkaline solution;
A fourth step of obtaining the SiO ₂ film by subjecting the polyorganosiloxane film remaining in the third step to a second SiO ₂ treatment to change the polyorganosiloxane to SiO ₂ ; A film forming method characterized by comprising:   The film forming method according to claim 1, wherein in the first step, the polyorganosiloxane film is formed by a plasma polymerization method.   The film forming method according to claim 1, wherein the polyorganosiloxane is mainly composed of a dialkyl silicone. 4. The film forming method according to claim 1, wherein in the second step, the first SiO ₂ treatment is performed by at least one of ultraviolet irradiation and plasma irradiation.   The film forming method according to claim 1, wherein in the third step, the pH of the alkaline solution is 9 or more.   The film forming method according to claim 1, wherein the temperature of the alkaline solution is 0 to 100 ° C. in the third step.   Prior to the fourth step, the polyorganosiloxane film remaining in the third step includes a step of performing at least one of a water washing treatment and an acid treatment. The film-forming method of description. The film forming method according to claim 1, wherein, in the fourth step, the second SiO ₂ treatment is performed by at least one of ultraviolet irradiation and plasma irradiation. A SiO ₂ film formed by the film forming method according to claim 1. An electronic component comprising the SiO ₂ film according to claim 9.   An electronic device comprising the electronic component according to claim 10.

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