JP2005236334A - Manufacturing method of semiconductor integrated circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for bonding an inner lead to an electrode pad correctly. <P>SOLUTION: A manufacturing method of μBGA:IC17 wherein chips 12 are fixed to a tape carrier 2 of which one principal surface is provided with a plurality of inner leads 7 via an insulating film 10, and each electrode pad 14 of the chips 12 is bonded to each inner lead 7, includes steps of: optically observing one unit area including a chip 12, when the inner lead 7 is bonded to the electrode pad 14; recognizing the center position of the inner lead 7 based on the observation result; aligning the tip of a bonding tool 25 to the center of the inner lead 7; and bonding the inner lead 7 to the electrode pad 14 by the bonding tool 25. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device manufacturing technique, and more particularly to a bonding technique for bonding an inner lead laid on a carrier to an electrode pad formed on a semiconductor chip (hereinafter referred to as a chip). Effectively used in a method of manufacturing a semiconductor integrated circuit device (hereinafter referred to as an IC) having a chip size package (Chip Size Package or Chip Scale Package; hereinafter referred to as CSP) having substantially the same size. About.

  As electronic devices using ICs become smaller and thinner, there is a demand for reducing IC packages. Various CSPs have been developed to meet this demand. As an example, there is a micro ball grid array package (hereinafter referred to as μBGA) configured as follows. In other words, the tape carrier is mechanically connected to the main surface of the chip on the electrode pad side by an insulating film, and each inner lead laid on the tape carrier is bonded to each electrode pad of the chip. Bumps as external terminals are respectively soldered and protruded.

  As a bonding method of inner leads in this μBGA, a single point bonding method (hereinafter simply referred to as a bonding method) in which a large number of inner leads are pressed against each electrode pad arranged over the entire surface of the chip one by one with a bonding tool. .)

  In addition, there exists a nonpatent literature 1 as an example which describes CSP.

When a memory chip is mounted on a TAB type package of a lead-on-chip method using a film carrier, the bonding strength does not decrease due to a bonding error, and a TAB package of a low-cost memory chip that does not require a forming die is required. Patent Document 1 is an example in which a bonding method is described. In this bonding method, after the inner lead is bent and deformed before bonding by the bonding tool, the inner lead is pressurized and bonded to the electrode pad of the chip by the bonding tool.
“Monthly Semiconductor World”, Press Journal, May 1995, p. 112-113 JP-A-6-13428

  However, in the above-described bonding method, the electrode pad is positioned directly below the inner lead, and thus the present inventors have a problem that the center line of the inner lead cannot be recognized by the image recognition device. It was revealed.

  However, in the bonding method described above, if the chip mechanically connected to the insulating film is inclined, an error occurs between the distance between the inner lead and the electrode pad that are successively bonded by the bonding tool. Therefore, the present inventors have revealed that there is a problem that the loop shape of each inner lead after bonding is different.

  In the bonding method described above, since the inner lead that extends horizontally is bent and deformed by the bonding tool, the inner lead is distorted and stress remains in the inner lead after the inner lead bonding, resulting in a temperature cycle. The present inventor has revealed that there is a problem that a crack is formed in a stress residual portion of the inner lead when a stress due to a difference in thermal expansion coefficient (hereinafter referred to as thermal stress) is applied during an acceleration test or the like. It was.

  An object of the present invention is to provide a bonding technique capable of recognizing the center line of an inner lead regardless of the presence of an electrode pad.

  An object of the present invention is to provide a bonding technique that can stabilize the loop shape after bonding.

  An object of the present invention is to provide a bonding technique capable of preventing stress from remaining in an inner lead after inner lead bonding.

  An object of the present invention is to provide a bonding technique capable of realizing manufacture with a tape by ensuring alignment with the tape.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  An outline of typical inventions among inventions disclosed in the present application will be described as follows.

That is, supplying a chip lead composite tape in which a plurality of semiconductor integrated circuit chips are fixed to a carrier tape having a wiring pattern including a plurality of inner leads to a lead bonding apparatus;
A step of optically observing one unit region including one semiconductor integrated circuit chip among the plurality of semiconductor integrated circuit chips on the supplied chip lead composite tape in the lead bonding apparatus;
In the lead bonding apparatus, based on the result of the observation, the inner lead formed to protrude from the surface of the carrier tape to be connected to an electrode pad on one main surface of the one semiconductor integrated circuit chip Recognizing the center position of the inner tool and aligning the position of the tip of the bonding tool with the center of the inner lead;
In the lead bonding apparatus, after aligning the position of the tip portion of the bonding tool, the inner lead and the electrode pad are connected by the bonding tool.

  According to the above-described means, at the time of inner lead bonding, one unit region is optically observed, the center of the inner lead is recognized based on the observation result, and the tip of the bonding tool is aligned with the center of the inner lead. Therefore, the inner lead can be accurately bonded to the electrode pad.

  A typical outline of the invention disclosed in the present application will be described as follows.

1. After the semiconductor chip is mechanically connected to the carrier in which the inner lead group is laid on one main surface through the insulating film, and each electrode pad of the semiconductor chip is aligned with the inner lead, the inner lead Is bonded to each electrode pad of the semiconductor chip by a bonding tool,
An image capturing step in which an image of the inner lead with the electrode pad as a background is captured;
Of the image scanning lines orthogonal to the inner leads on the captured image, each inner lead is provided for at least one of the image scanning lines including the electrode pad and at least one of the image scanning lines on both sides of the electrode pad. An inner lead recognition measurement line setting process in which a recognition measurement line is set;
A luminance measurement step in which the luminance of each point on each line is measured for each inner lead recognition measurement line;
A forming step in which the luminance of each inner lead recognition measurement line is added for each same point to form an added luminance distribution waveform;
A determination step in which a threshold is set in the added luminance distribution waveform, a center of gravity in a region equal to or greater than the threshold is calculated, and a centerline of the inner lead is determined;
A bonding method characterized by comprising:

2. After the semiconductor chip is mechanically connected to the carrier in which the inner lead group is laid on one main surface through the insulating film, and each electrode pad of the semiconductor chip is aligned with the inner lead, the inner lead Is bonded to each electrode pad of the semiconductor chip by a bonding tool,
An image capturing step in which an image of the inner lead with the electrode pad as a background is captured;
Of the image scanning lines orthogonal to the inner leads on the captured image, each inner lead is provided for at least one of the image scanning lines including the electrode pad and at least one of the image scanning lines on both sides of the electrode pad. An inner lead recognition measurement line setting process in which a recognition measurement line is set;
A luminance measurement step in which the luminance of each point on each line is measured for each inner lead recognition measurement line;
A forming step in which a threshold value is set for each inner lead recognition measurement line and a luminance distribution waveform is formed above the threshold value;
A determination step in which the luminance distribution waveform above each threshold is added for each same point to form a luminance distribution waveform above the addition threshold, a center of gravity in a region above this threshold is calculated, and a center line of the inner lead is determined.
A bonding method characterized by comprising:

3. After the semiconductor chip is mechanically connected to the carrier in which the inner lead group is laid on one main surface through the insulating film, and each electrode pad of the semiconductor chip is aligned with the inner lead, the inner lead Is bonded to each electrode pad of the semiconductor chip by a bonding tool,
An image capturing step in which an image corresponding to the inner lead and the electrode pad is captured from the lateral direction of the carrier and the semiconductor chip;
Of the image scanning lines orthogonal to the inner leads on the captured image, at least one of the image scanning lines corresponding to the electrode pad and at least one of the image scanning lines on both sides of the image corresponding to the electrode pad. An inner lead recognition measurement line setting step in which each inner lead recognition measurement line is set,
A luminance measurement step in which the luminance of each point on each line is measured for each inner lead recognition measurement line;
A forming step in which the luminance of each inner lead recognition measurement line is added for each same point to form an added luminance distribution waveform;
A determination step in which a threshold is set in the added luminance distribution waveform, a center of gravity in a region equal to or greater than the threshold is calculated, and a centerline of the thickness of the inner lead is determined;
A bonding method characterized by comprising:

4). After the semiconductor chip is mechanically connected to the carrier in which the inner lead group is laid on one main surface through the insulating film, and each electrode pad of the semiconductor chip is aligned with the inner lead, the inner lead Is bonded to each electrode pad of the semiconductor chip by a bonding tool,
An image capturing step in which an image corresponding to the inner lead and the electrode pad is captured from the lateral direction of the carrier and the semiconductor chip;
Of the image scanning lines orthogonal to the inner leads on the captured image, at least one of the image scanning lines corresponding to the electrode pad and at least one of the image scanning lines on both sides of the image corresponding to the electrode pad. An inner lead recognition measurement line setting step in which each inner lead recognition measurement line is set,
A luminance measurement step in which the luminance of each point on each line is measured for each inner lead recognition measurement line;
A forming step in which a threshold value is set for each inner lead recognition measurement line and a luminance distribution waveform is formed above the threshold value;
Determination that the luminance distribution waveform above the threshold value is formed by adding the luminance distribution waveforms above the threshold values for each same point, and calculating the center of gravity in the area above the threshold value to determine the center line of the inner lead thickness Process,
A bonding method characterized by comprising:

5). Each inner lead that is aligned with each electrode pad of the semiconductor chip mechanically connected to the carrier having an inner lead group laid on one main surface via an insulating film is bonded by a bonding tool. In the bonding apparatus
An image capturing device that captures an image of the inner lead with the electrode pad as a background, and at least one of the image scanning lines including the electrode pad among image scanning lines that are orthogonal to the inner lead on the captured image, and An inner lead recognition measurement line setting unit for setting each inner lead recognition measurement line for at least one of the image scanning lines on both sides of the electrode pad;
A luminance measuring unit for measuring the luminance of each point on each line for each inner lead recognition measuring line;
A forming unit that adds the luminance of each inner lead recognition measurement line for each same point to form an added luminance distribution waveform;
A determination step of setting a threshold value in the added luminance distribution waveform, calculating a center of gravity in a region equal to or greater than the threshold value, and determining a centerline of the inner lead;
A bonding apparatus comprising:

6). Each inner lead that is aligned with each electrode pad of the semiconductor chip that is mechanically connected to the carrier having an inner lead group laid on one main surface through an insulating film is bonded by a bonding tool. In the bonding apparatus
An image capturing device for capturing an image corresponding to the inner lead and the electrode pad from the lateral direction of the carrier and the semiconductor chip;
Of the image scanning lines orthogonal to the inner leads on the captured image, at least one of the image scanning lines corresponding to the electrode pad and at least one of the image scanning lines on both sides of the image corresponding to the electrode pad. An inner lead recognition measurement line setting unit for setting each inner lead recognition measurement line,
A luminance measuring unit for measuring the luminance of each point on each line for each inner lead recognition measuring line;
A forming unit that adds the luminance of each inner lead recognition measurement line for each same point to form an added luminance distribution waveform;
A determination unit configured to determine a center line of the thickness of the inner lead by calculating a center of gravity in a region equal to or greater than the threshold by setting a threshold value in the added luminance distribution waveform;
A bonding apparatus comprising:

7). In a bonding method in which a semiconductor chip is mechanically connected to a carrier in which an inner lead group is laid on one main surface via an insulating film, and each inner lead is bonded to each electrode pad of the semiconductor chip by a bonding tool.
Before each inner lead is bonded to each electrode pad of the semiconductor chip by a bonding tool, a height of the plane including the electrode pad group of the semiconductor chip with respect to the bonding tool is measured, and the measured height Bonding with the bonding tool is performed based on the above.

8). The bonding method according to claim 7, wherein the height measurement is performed by bringing the bonding tool into contact with a plane including the electrode pad group of the semiconductor chip via the inner lead.

9. The height measurement is performed when the bonding tool is brought into contact with at least three portions of a plane including the electrode pad group in the semiconductor chip to obtain parallelism of the semiconductor chip. Item 8. A bonding method according to Item 7.

10. The bonding method according to claim 7, wherein the height of the semiconductor chip is measured by detecting a plane including the electrode pad group in the semiconductor chip by a non-contact sensor.

11. In a bonding apparatus in which each inner lead is bonded by a bonding tool to each electrode pad of a semiconductor chip mechanically connected to a carrier in which an inner lead group is laid on one main surface through an insulating film,
Before each inner lead is bonded to each electrode pad of the semiconductor chip by a bonding tool, a height of the plane including the electrode pad group of the semiconductor chip with respect to the bonding tool is measured, and the measured height Bonding with the bonding tool is performed based on the above.

12 12. The bonding apparatus according to claim 11, wherein the bonding tool is brought into contact with a plane including the electrode pad group of the semiconductor chip via each inner lead and the height is measured.

13. Item 11. The height is measured by bringing the bonding tool into contact with at least three portions of a plane including the electrode pad group in the semiconductor chip to obtain parallelism of the semiconductor chip. The bonding apparatus as described.

14 12. The bonding apparatus according to claim 11, wherein a height of the semiconductor chip is measured by detecting a plane including the electrode pad group in the semiconductor chip with a non-contact sensor.

15. A semiconductor in which a semiconductor chip is mechanically connected to a carrier in which a plurality of inner leads are laid on one main surface via an insulating film, and each electrode pad of the semiconductor chip is bonded to each inner lead. A method for manufacturing an integrated circuit device, comprising:
When the inner lead is bonded to the electrode pad, the position of the inner lead is individually or collectively observed. Based on the observation result, the inner lead is deformed by a bonding tool and bonded to the electrode pad. A method for manufacturing a semiconductor integrated circuit device.

16. A connection step in which the semiconductor chip is mechanically connected to the carrier through the insulating film, and a position of the inner lead are individually or collectively observed, and the inner lead is converted into the bonding tool based on the observation result. 16. The method of manufacturing a semiconductor integrated circuit device according to claim 15, further comprising a bonding step of being deformed by bonding and bonding to the electrode pad.

17. Before the inner lead is bonded to the electrode pad, a regular portion regularly arranged on the carrier is observed, and based on this observation, the semiconductor chip and the bonding tool correspond to each other. Item 16. A method for manufacturing a semiconductor integrated circuit device according to Item 15.

18. A feature lead arranged in advance on the carrier and a feature pad arranged in advance on the semiconductor chip are observed, and the positions of the inner lead and the semiconductor chip are recognized based on the observation. Item 16. A method for manufacturing a semiconductor integrated circuit device according to Item 15.

19. 16. The method of manufacturing a semiconductor integrated circuit device according to claim 15, wherein an image of the inner lead is captured, and the position of the inner lead is observed based on the captured image.

20. A semiconductor in which a semiconductor chip is mechanically connected to a carrier in which a plurality of inner leads are laid on one main surface via an insulating film, and each electrode pad of the semiconductor chip is bonded to each inner lead. A bonding apparatus used in a method of manufacturing an integrated circuit device,
When the inner lead is bonded to the electrode pad, the position of the inner lead is individually or collectively observed. Based on the observation result, the inner lead is deformed by a bonding tool and bonded to the electrode pad. A bonding apparatus characterized by that.

21. An observation device that individually or collectively observes the position of the inner lead, and a controller that deforms the inner lead with the bonding tool based on the observation result and bonds the inner lead to the electrode pad. Item 20. The bonding apparatus according to Item 20.

22. An observation device for observing the regular portion regularly arranged on the carrier before the inner lead is bonded to the electrode pad, and a controller for obtaining correspondence between the semiconductor chip and the bonding tool based on the observation Item 21. The bonding apparatus according to Item 20, wherein

23. An observation device for observing a feature lead arranged in advance on the carrier and a feature pad arranged in advance on the semiconductor chip, and a controller for recognizing the position of the inner lead and the semiconductor chip based on the observation Item 20. A bonding apparatus according to Item 20, which is provided.

24. 21. The bonding apparatus according to claim 20, further comprising: an image capturing device that captures an image of the inner lead; and a controller that observes the position of the inner lead based on the captured image.

25. A semiconductor in which a semiconductor chip is mechanically connected to a carrier in which a plurality of inner leads are laid on one main surface via an insulating film, and each electrode pad of the semiconductor chip is bonded to each inner lead. A method for manufacturing an integrated circuit device, comprising:
A method of manufacturing a semiconductor integrated circuit device, wherein a part of the inner lead is bent by a bonding tool and pressed against the electrode pad at the time of bonding.

26. 26. The inner lead according to claim 25, wherein a part of the inner lead is brought into contact with the semiconductor chip by the bonding tool, and then the bonding tool is horizontally moved to bend the inner lead into an S shape. Of manufacturing a semiconductor integrated circuit device.

27. 27. The method of manufacturing a semiconductor integrated circuit device according to claim 26, wherein the bonding tool having a part of the inner lead brought into contact with the semiconductor chip is moved up and then moved horizontally.

28. After the bonding tool in which a part of the inner lead is brought into contact with the semiconductor chip is raised, the bonding tool is horizontally moved in the direction of the base end portion of the inner lead beyond the bonded portion of the electrode pad, and 28. The method of manufacturing a semiconductor integrated circuit device according to claim 27, wherein the semiconductor integrated circuit device is returned to the bonded portion.

29. 26. The semiconductor according to claim 25, wherein after a part of the inner lead is hit and cut by the bonding, one cut piece is bent by a bonding tool and bonded to the electrode pad. A method for manufacturing an integrated circuit device.

30. 27. The method of manufacturing a semiconductor integrated circuit device according to claim 26, wherein a tip portion of the inner lead is brought into contact with the semiconductor chip by the bonding tool.

31. 26. The method according to claim 25, wherein a part of the inner lead is moved in the direction of the semiconductor chip by the bonding tool, and then the bonding tool is horizontally moved to bend the inner lead into an S shape. Of manufacturing a semiconductor integrated circuit device.

32. After the bonding tool that has moved a part of the inner lead in the direction of the semiconductor chip is raised, the bonding tool is horizontally moved in the direction of the base end of the inner lead beyond the bonded portion of the electrode pad, and Item 32. The method of manufacturing a semiconductor integrated circuit device according to Item 31, wherein the method is returned to the bonded portion.

33. A semiconductor in which a semiconductor chip is mechanically connected to a carrier in which a plurality of inner leads are laid on one main surface via an insulating film, and each electrode pad of the semiconductor chip is bonded to each inner lead. A bonding apparatus used in a method of manufacturing an integrated circuit device,
In the bonding, a part of the inner lead is bent by a bonding tool and pressed against the electrode pad for bonding.

34. 34. The inner lead is deformed into an S shape by horizontally moving the bonding tool after a part of the inner lead is brought into contact with the semiconductor chip by the bonding tool. Bonding equipment.

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.
When bonding the inner lead to the electrode pad with a bonding tool, one unit region is optically observed, the center of the inner lead is recognized based on the observation result, and the tip of the bonding tool is aligned with the center of the inner lead. Therefore, the inner lead can be accurately bonded to the electrode pad.
In addition, when the inner lead is bonded to the electrode pad of the chip, the center of the inner lead can be quickly obtained without performing complicated processing such as comparison by pattern recognition for each pixel of the image. The bonding time can be shortened as a whole.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1 of the invention)
FIG. 1 is a process diagram showing an inner lead recognition method in a bonding method according to an embodiment of the present invention. FIG. 2 is an explanatory diagram for explaining each process. FIG. 3 is a schematic view showing a bonding apparatus according to an embodiment of the present invention. FIG. 4 is a partial sectional view showing each step of the bonding method. 5A and 5B show a workpiece, wherein FIG. 5A is a partially omitted plan view, and FIG. 5B is a partially omitted front sectional view. 6A and 6B show the manufactured μBGA • IC, where FIG. 6A is a plan view and FIG. 6B is a partially cut front view.

  In this embodiment, the bonding method according to the present invention is used in a bonding process of a manufacturing method of an IC (hereinafter referred to as μBGA · IC) having μBGA, and is performed by a bonding apparatus shown in FIG. To be implemented. The workpiece 1 in the bonding process of the μBGA · IC manufacturing method is configured as shown in FIG. The workpiece 1 is configured by mechanically connecting a chip to a tape carrier via an insulating layer. The tape carrier 2 as a carrier corresponds to a TAB (tape automated bonding) tape used in a method for manufacturing a TCP IC (IC having a tape carrier package). Since the tape carrier 2 is configured such that the same pattern is repeated in the longitudinal direction, the description and illustration of the configuration are made only for one unit.

  The tape carrier 2 is provided with a carrier body 3 in which an insulating resin such as polyimide is used and the same pattern is integrally formed in a tape shape continuous in the longitudinal direction. The carrier body 3 has a square bump forming portion 4. It is lined up in a row in the longitudinal direction. A large number of bump holes 5 are arranged in the bump forming portion 4 so as to be arranged on a square annular line, and each bump hole 5 is configured such that a bump described later is electrically connected to an outer lead described later. It is like that. On the four sides of the bump forming portion 4, four window holes 6 formed in a rectangular long hole shape are arranged and opened in a square frame shape.

  A plurality of inner leads 7 are wired on one main surface (hereinafter referred to as a lower surface) of the carrier body 3 so as to straddle the window holes 6 in the short direction. Each inner lead 7 has a series of outer leads 8 connected to one end (hereinafter referred to as an inner end) located on the bump forming portion 4 side of each inner lead 7, and the inner leads 7 and the outer leads 8 arranged in series with each other. Is mechanically and electrically integrated. The inner lead 7 group and the outer lead 8 group are formed using a conductive material such as copper or gold. As a method for forming the inner lead 7 group and the outer lead 8 group, a method of patterning a copper foil or a gold foil fixed to the carrier body 3 by an appropriate means such as welding or adhesion by lithography processing and etching processing, There is a method of selectively performing a gold plating process by a lithography process. A portion of each outer lead 8 facing the bump hole 5 is exposed from the bump forming portion 4.

  The inner leads 7 are wired in parallel with each other at intervals in the longitudinal direction of each window hole 6. A pair of triangular notches 9 are formed at both ends of each inner lead 7 at the portion bridging the window hole 6 and the tip side is cut inwardly. That is, the inner lead 7 can be easily cut at the line connecting both the notches 9 and 9. In each inner lead 7, the pair of notches 9, 9 is arranged at a position offset from the center to the side opposite to the bump forming portion 4 (hereinafter referred to as the outside) in the window hole 6. That is, the length of the portion 7a on the side where both notches 9 and 9 of the inner lead 7 approach the outside of the window hole 6 (hereinafter referred to as a short portion) 7a is such that both notches 9 and 9 of the inner lead 7 The portion on the side far from the inner side (hereinafter referred to as a long portion) 7b is shorter than the length of 7b.

  An insulating film 10 made of elastomer or silicon rubber is attached to the lower surface of the carrier body 3 by an appropriate means such as adhesion, and the inner leads 7 group and the outer leads 8 group are covered with the insulating film 10. In the portion of the insulating film 10 facing each window hole 6 of the carrier body 3, the rectangular hole-shaped window hole 11 is slightly larger than the window hole 6 of the carrier body 3 so that the inner lead 7 group is exposed to the outside. Is open. Therefore, the tape carrier 2 is constituted by the carrier body 3, the inner lead 7 group, the outer lead 8 group, and the insulating film 10.

  As shown in FIG. 5, the chip 12 is formed in a square flat plate shape having a size substantially equal to one unit of the tape carrier 2, and its main surface side (hereinafter referred to as an active area side). Has a desired semiconductor integrated circuit including a semiconductor element. That is, the chip 12 is manufactured by forming a semiconductor integrated circuit on the active area side in the state of a semiconductor wafer in a so-called IC manufacturing pre-process, and dividing into a square flat plate shape in a dicing process. The surface of the chip 12 on the active area side is covered with a passivation film 13, and the electrode pad 14 is exposed to the outside in the opening formed in the passivation film 13. A plurality of electrode pads 14 are formed and correspond to the inner leads 7 in the tape carrier 2.

  The chip 12 thus configured is mechanically connected to the tape carrier 2 having the above-described configuration as shown in FIG. That is, the chip 12 is disposed on the tape carrier 2 such that each electrode pad 14 is aligned with each inner lead 7, and is bonded and mechanically connected between the passivation film 13 and the insulating film 10. In this state, each inner lead 7 is opposed to each electrode pad 14 at a position separated upward by the thickness of the insulating film 10 and the adhesive layer. In each inner lead 7, the pair of notches 9, 9 is arranged at a position offset to the left from directly above the electrode pad 14, and the substantially central portion of the long portion 7 b of the inner lead 7 is an electrode. It is in a state of being located directly above the pad 14.

  The bonding apparatus 20 shown in FIG. 3 includes a stage 21. The stage 21 is configured to hold the workpiece 1 according to the above configuration horizontally. An XY table 22 is provided on one side of the stage 21, and the XY table 22 is configured to move a bonding head 23 mounted thereon in the XY direction. The bonding head 23 supports one end of a bonding arm 24 having a bonding tool 25 attached to the tip. The bonding head 23 is configured to move the bonding tool 25 up and down by operating the bonding arm 24. Yes. The bonding arm 24 is provided with a position detection sensor 26, and the position detection sensor 26 is connected to a main controller described later. A controller (hereinafter referred to as an operation controller) 27 that controls these operations is connected to the XY table 22 and the bonding head 23, and a controller (hereinafter referred to as a main controller) that instructs the operation controller 27 to operate. 28 is connected. A display 29 is connected to the main controller 28.

  The bonding head 23 is provided with an industrial television camera (hereinafter referred to as a camera) 31 as an image capturing device for constituting the inner lead recognition device 30 by a stand 36, and the camera 31 is a workpiece 1 on the stage 21. Are supposed to be filmed. An inner lead recognition measurement line setting unit (hereinafter referred to as a setting unit) 32 for setting an inner lead recognition measurement line is connected to the camera 31, and a luminance measurement unit 33 is connected to the setting unit 32. . The luminance measuring unit 33 is connected to a forming unit 34 that forms an added luminance distribution waveform, and the forming unit 34 is connected to a determining unit 35 that determines the inner lead centerline. The determination unit 35 is connected to the main controller 28 and transmits a determination result to the main controller 28.

  Next, an inner lead recognizing method in a bonding method according to an embodiment of the present invention by the bonding apparatus having the above configuration will be described with reference to FIGS.

  The main controller 28 drives the XY table 22 to move the camera 31 to the imaging position of the inner lead 7 to be bonded in the workpiece 1 placed on the stage 21. The camera 31 executes the image capturing step 41 in FIG. 1 and images the inner lead 7 to be bonded. An image 51 shown in FIG. 2A captured by the camera 31 is displayed on the display 29 and input to the setting unit 32.

  The setting unit 32 executes the inner lead recognition measurement line setting step 42 in FIG. 1, and as shown in FIG. 2A, among the image scanning lines respectively orthogonal to the inner leads 7 in the image 51. An electrode pad corresponding inner lead recognition measurement line (hereinafter referred to as a center measurement line) 52 is set by one of the image scanning lines including the electrode pad 14, and one of the image scanning lines on both sides of the electrode pad 14 is used. Each electrode pad outer inner lead recognition measurement line (hereinafter referred to as an inner end measurement line and an outer end measurement line) 53 and 54 is set.

  The luminance measurement unit 33 executes the luminance measurement step 43 in FIG. 1 to measure the luminance at each point on each scanning line for each of the central measurement line 52, the inner end measurement line 53, and the outer end measurement line 54, As shown in FIGS. 2B, 2C, and 2D, a central measurement line luminance waveform 52a, an inner end measurement line luminance waveform 53a, and an outer end measurement line luminance waveform 54a are formed. The central measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the outer end measurement line luminance waveform 54a are input to the forming unit 34.

  The forming unit 34 executes the forming step 44 in FIG. 1 to perform the central measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the outer end shown in FIGS. 2B, 2C, and 2D. The added luminance distribution waveform 55 shown in FIG. 2E is formed by superimposing the local measurement line luminance waveform 54a by matching each point on the scanning line, that is, by matching the time series. That is, the luminances of the central measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the outer end measurement line luminance waveform 54a are added for each point, and the added luminance distribution waveform 55 is formed. The added luminance distribution waveform 55 is input to the determination unit 35.

  The determination unit 35 executes the determination step 45 in FIG. 1 and first sets a threshold value 56 in the added luminance distribution waveform 55 as shown in FIG. Subsequently, the center of gravity 58 in the region 57 of the added luminance distribution waveform 55 that is equal to or greater than the threshold value 56 is calculated, and the position facing the center of gravity 58 is determined as the position 59 of the center line of the inner lead 7 to be bonded. That is, the position of the inner lead 7 to be bonded is accurately recognized.

  The center line of the bonding tool 25 of the bonding apparatus 20 at the position 59 of the center line of the inner lead 7 determined as described above is operated by the operation of the XY table 22 under the control of the operation controller 27 based on the command of the main controller 28. By matching, the inner lead 7 is accurately bonded to the electrode pad 14.

  Next, a bonding method according to an embodiment of the present invention using the bonding apparatus having the above configuration will be described with reference to FIG.

  As shown in FIG. 4A, when the bonding tool 25 pushes down the portion of the long portion 7b of the inner lead 7 near the notch 9, the inner lead 7 is cut from the line connecting the notches 9,9. The

  4B, when the bonding tool 25 is further lowered, the cut piece of the long portion 7b of the inner lead 7 is pushed down and landed on the upper surface of the chip 12. As shown in FIG.

  Whether or not the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7 is determined by the main controller 28 by analyzing position data from the position detection sensor 26 provided in the bonding arm 24. When it is determined that the bonding tool 25 has not landed on the upper surface of the chip 12, the main controller 28 activates an alarm device such as a buzzer and displays the alarm content on the display 29. Next, the bonding tool 25 is gradually lowered and landed on the upper surface of the chip 12 via the inner lead 7 by manual operation of the keyboard by the operator or automatic command control by the main controller 28.

  When it is determined that the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7, the main controller 28 reads position data from the position detection sensor 26 at the time of landing, and the position of the landing point on the upper surface of the chip 12. Measure height.

  The main controller 28 that has measured the height of the bonding tool 25 raises the bonding tool 25 by a predetermined height H as shown in FIG. For the predetermined height H, an optimum value corresponding to each different bonding condition is obtained by empirical methods such as experiments, computer simulation, and past performance data, and is stored in the main controller 28 in advance by a keyboard. The main controller 28 commands a predetermined height H to the operation controller 27. The operation controller 27 controls the bonding head 23 to swing the bonding arm 24 to raise the bonding tool 25 by a predetermined height H.

  When the bonding tool 25 is raised by a predetermined height H, as shown in FIG. 4 (c), the cut piece of the long portion 7 b of the inner lead 7 is moved upward by the spring back of the inner lead 7. Rise slightly away from In a state where the cut piece of the long portion 7b of the inner lead 7 is lifted from the chip 12, the bonding tool 25 that has been raised by a predetermined height H is separated from the upper surface of the cut piece of the long portion 7b of the inner lead 7 It has become.

  Subsequently, as shown in FIG. 4D, the bonding tool 25 is translated in the direction of the bump forming portion 4 to the position just above the electrode pad 14 while maintaining the height as it is. Along with this parallel movement, the cut piece of the long portion 7b of the inner lead 7 is shifted in the direction of the bump forming portion 4 by the bonding tool 25 and pushed down obliquely, so that the cut piece has a predetermined loop shape. Is formed, and the lower surface of the tip is in contact with the upper surface of the electrode pad 14.

  Next, as shown in FIG. 4 (e), the bonding tool 25 is lowered to push down the cut piece of the long portion 7 b of the inner lead 7. By this depression, the cut end side end portion of the cut portion of the long portion 7b of the inner lead 7 is pressed against the electrode pad 14 while forming a predetermined loop shape. The bonding tool 25 presses and contacts the electrode pad 14 with the end of the cut portion of the long portion 7b of the inner lead 7 against the electrode pad 14 and applies thermocompression (pressure contact) by applying heat and ultrasonic energy. That is, the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25.

  Thereafter, the inner lead recognition method and the bonding method described above are repeated for each inner lead 7, whereby the chip 12 is electrically connected to the tape carrier 2. When bonding each inner lead 7, the position 59 of the center line of the inner lead 7 is recognized before the inner lead 7 is bonded to the electrode pad 14 of the chip 12 by the bonding tool 25, and the electrode pad in the chip 12 is also recognized. The heights of the 14 bonding tools 25 are sequentially measured, and the bonding by the bonding tool 25 is performed under the optimum conditions corresponding to the recognized center line position 59 and each measured height.

  Therefore, for example, the inner lead 7 and the electrode pad that are bonded (thermocompression bonded) one after another by the bonding tool 25 when the chip 12 mechanically connected via the insulating film 10 under the bump forming portion 4 is inclined. Even if an error has occurred between each of the gaps 14 and 14, bonding by the bonding tool 25 is executed for each inner lead 7 under the optimum condition corresponding to the error between the respective inner leads 7. The loop shape of the inner lead 7 is appropriately formed.

  When the above-described bonding operation is completed for all the inner leads 7, as shown in FIG. 6, an insulating material such as elastomer or silicon rubber is potted inside each window hole 6 of the tape carrier 2. The inner lead 7 group is resin-sealed by the resin sealing portion 15.

  Next, a solder ball is soldered to a portion exposed at the bottom of each bump hole 5 in each outer lead 8 of the tape carrier 2 so as to protrude from the upper surface of the bump forming portion 4 as shown in FIG. Bumps 16 are formed on the tape carrier 2. As described above, the μBGA IC 17 shown in FIG. 6 is manufactured.

  According to the embodiment, the following effects can be obtained.

1) When the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25, the position 59 of the center line of the inner lead 7 is sequentially set before the inner lead 7 is bonded to the electrode pad 14 of the chip 12 by the bonding tool 25. By recognizing, since the bonding tool 25 can be accurately aligned with the inner lead 7, each inner lead 7 can be properly bonded to each electrode pad 14, and thus the quality and reliability of the μBGA IC 17. And production yield can be improved.

2) The luminances of the central measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the outer end measurement line luminance waveform 54a are added at the same point to form an added luminance distribution waveform 55. This added luminance distribution waveform By setting the threshold value 56 to 55, it is possible to form a region 57 higher than the threshold value 56 in the added luminance distribution waveform 55, so that the inner lead 7 regardless of the presence of the electrode pad 14 that is the background of the inner lead 7. The position 59 of the center line can be accurately determined, and the position of the inner lead 7 to be bonded can be accurately recognized.

  FIG. 7 is a process diagram showing an inner lead recognition method in the bonding method according to the embodiment of the present invention. FIG. 8 is an explanatory diagram for explaining each process.

  This embodiment is different from the first embodiment in that an image corresponding to the inner lead and the electrode pad is taken from the side to recognize the center line of the thickness of the inner lead. The inner lead recognition method in the bonding method according to this embodiment will be described with reference to FIGS.

  In the present embodiment, the camera is horizontally oriented and captures the image 71 shown in FIG. 8A corresponding to the inner lead 7 and the electrode pad 14, thereby executing the image capturing step 61 in FIG. An image 71 shown in FIG. 8A captured by a horizontal camera is displayed on the display and is input to the setting unit 32.

  The setting unit 32 executes the inner lead recognition measurement line setting step 62 in FIG. 7, and as shown in FIG. 8A, vertical scanning lines (television images) orthogonal to the inner leads 7 in the image 71, respectively. In this case, although it is a virtual scanning line, it can be easily set by image processing.) One of the image scanning lines including the electrode pad 14 is used to measure the inner lead recognition measurement line (hereinafter referred to as an electrode pad corresponding measurement line). , 72 is set, and each electrode pad outer inner lead recognition measurement line (hereinafter referred to as an inner end measurement line and an outer end part, respectively) is set by one of the image scanning lines on both sides of the electrode pad 14. This is called a measurement line.) 73 and 74 are set.

  The luminance measurement unit 33 executes the luminance measurement step 63 in FIG. 1 to measure the luminance at each point on each scanning line for each of the central measurement line 72, the inner end measurement line 73, and the outer end measurement line 74, As shown in FIGS. 8B, 8C, and 8D, a central measurement line luminance waveform 72a, an inner end measurement line luminance waveform 73a, and an outer end measurement line luminance waveform 74a are formed. The central measurement line luminance waveform 72a, the inner end measurement line luminance waveform 73a, and the outer end measurement line luminance waveform 74a are input to the forming unit 34.

  The forming unit 34 executes the forming step 64 in FIG. 1, and the center measurement line luminance waveform 72a, the inner end measurement line luminance waveform 73a, and the outer end shown in FIGS. 8B, 8C, and 8D. The added luminance distribution waveform 75 shown in FIG. 8E is formed by superimposing the local measurement line luminance waveform 74a by matching each point on the scanning line, that is, by matching the time series. That is, the luminances of the central measurement line luminance waveform 72a, the inner end measurement line luminance waveform 73a, and the outer end measurement line luminance waveform 74a are added for each point to form an added luminance distribution waveform 75. This added luminance distribution waveform 75 is input to the determination unit 35.

  The determination unit 35 executes the determination step 65 in FIG. 1, and first sets a threshold value 76 in the added luminance distribution waveform 75 as shown in FIG. 8 (f). Subsequently, the center of gravity 78 in the region 77 of the added luminance distribution waveform 75 that is equal to or greater than the threshold value 76 is calculated, and the position facing the center of gravity 78 is determined as the position 79 of the center line in the thickness direction of the inner lead 7. That is, the height position of the inner lead 7 to be bonded is accurately recognized.

  The height of the bonding tool 25 of the bonding apparatus 20 at the position of the center line in the thickness direction of the inner lead 7 obtained as described above, that is, the position 79 in the height direction, is based on a command from the main controller 28. The inner lead 7 is accurately bonded to the electrode pad 14 by being used for the operation of the bonding head 23 under the control of 27.

  FIG. 9 is a process diagram showing an inner lead recognition method in the bonding method according to the embodiment of the present invention. FIG. 10 is an explanatory diagram for explaining each process.

  This embodiment is different from the first embodiment in that the center measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the inner end measurement line luminance waveform 53a, as shown in FIGS. A threshold value 56A is set for each outer edge measurement line luminance waveform 54a, and after each region 57A exceeding the threshold value 56A is obtained, these are overlapped in time series so that FIG. 10B is formed. As shown in FIG. 10F, the centroid 58 in the region 57A in the luminance distribution waveform 55A above the addition threshold is calculated. The opposite position is a point determined as the position 59 of the center line of the inner lead 7 to be bonded.

  In the embodiment, similarly, each region exceeding the threshold is obtained for each central measurement line luminance waveform 72a, inner end measurement line luminance waveform 73a, and outer end measurement line luminance waveform 74a, and then added. The center of gravity is calculated by forming a luminance distribution waveform that is equal to or greater than the threshold, and the center of gravity can be determined as the position of the center line of the inner lead 7 in the thickness direction.

  Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, the center measurement line, the inner end measurement line, and the outer end measurement line are not limited to be set one by one, and the influence of the electrode pad can be relatively reduced, so that the number of pixels of the camera is reduced. It is desirable to set as many as possible within the allowable range.

  The image capturing device is not limited to an industrial television camera, and an area sensor such as a CCD or a line sensor may be used. In that case, the image capturing device may be moved and scanned, or the stage may be moved and scanned.

  The bonding method for electrically connecting the inner lead to the electrode pad is not limited to the ultrasonic thermocompression bonding method, and a pressure welding method, a eutectic method, or the like can be used.

  The bonding apparatus that performs bonding is not limited to single point bonding, but may be configured using an existing wire bonding apparatus.

  The carrier main body, which is a carrier of the inner lead group and the outer lead group, is not limited to a tape, but is formed using a material such as an insulating resin film, ceramic, or insulating resin. You may comprise by the board | substrate which has the rigidity.

  In the above description, the case where the invention made mainly by the present inventor is applied to the manufacturing method of μBGA • IC, which is the field of use behind it, has been described. However, the present invention is not limited to this, and other CSP • ICs are used. The present invention can be applied to all bonding techniques used in the manufacturing method and the like.

(Embodiment 2 of the invention)
FIG. 11 is a partial cross-sectional view showing each step of the bonding method according to one embodiment of the present invention. FIG. 12 is a schematic view showing a bonding apparatus according to an embodiment of the present invention. FIG. 13 shows a workpiece, in which (a) is a partially omitted plan view, and (b) is a partially omitted partially cut front view. 14A and 14B show the manufactured μBGA · IC, where FIG. 14A is a partially cut plan view and FIG. 14B is a partially cut front view.

  In this embodiment, the bonding method according to the present invention is used in a bonding process of a manufacturing method of an IC (hereinafter referred to as μBGA · IC) provided with μBGA, and is performed by a bonding apparatus shown in FIG. To be implemented. The workpiece 1 in the bonding process of the μBGA · IC manufacturing method is configured as shown in FIG. The workpiece 1 is configured by mechanically connecting a chip to a tape carrier via an insulating layer. The tape carrier 2 as a carrier corresponds to a TAB (tape automated bonding) tape used in a method for manufacturing a TCP IC (IC having a tape carrier package). Since the tape carrier 2 is configured such that the same pattern is repeated in the longitudinal direction, the description and illustration of the configuration are made only for one unit.

  The tape carrier 2 is provided with a carrier body 3 in which an insulating resin such as polyimide is used and the same pattern is integrally formed in a tape shape continuous in the longitudinal direction. The carrier body 3 has a square bump forming portion 4. It is lined up in a row in the longitudinal direction. A large number of bump holes 5 are arranged in the bump forming portion 4 so as to be arranged on a square annular line, and each bump hole 5 is configured such that a bump described later is electrically connected to an outer lead described later. It is like that. On the four sides of the bump forming portion 4, four window holes 6 formed in a rectangular long hole shape are arranged and opened in a square frame shape.

  A plurality of inner leads 7 are wired on one main surface (hereinafter referred to as a lower surface) of the carrier body 3 so as to straddle the window holes 6 in the short direction. Each inner lead 7 has a series of outer leads 8 connected to one end (hereinafter referred to as an inner end) located on the bump forming portion 4 side of each inner lead 7, and the inner leads 7 and the outer leads 8 arranged in series with each other. Is mechanically and electrically integrated. The inner lead 7 group and the outer lead 8 group are formed using a conductive material such as copper or gold. As a method for forming the inner lead 7 group and the outer lead 8 group, a method of patterning a copper foil or a gold foil fixed to the carrier body 3 by an appropriate means such as welding or adhesion by lithography processing and etching processing, There is a method of selectively performing a gold plating process by a lithography process. A portion of each outer lead 8 facing the bump hole 5 is exposed from the bump forming portion 4.

  The inner leads 7 are wired in parallel with each other at intervals in the longitudinal direction of each window hole 6. A pair of triangular notches 9 are formed at both ends of each inner lead 7 at the portion bridging the window hole 6 and the tip side is cut inwardly. That is, the inner lead 7 can be easily cut at the line connecting both the notches 9 and 9. In each inner lead 7, the pair of notches 9, 9 is arranged at a position offset from the center to the side opposite to the bump forming portion 4 (hereinafter referred to as the outside) in the window hole 6. That is, the length of the portion 7a on the side where both notches 9 and 9 of the inner lead 7 approach the outside of the window hole 6 (hereinafter referred to as a short portion) 7a is such that both notches 9 and 9 of the inner lead 7 The portion on the side far from the inner side (hereinafter referred to as a long portion) 7b is shorter than the length of 7b.

  An insulating film 10 made of elastomer or silicon rubber is attached to the lower surface of the carrier body 3 by an appropriate means such as adhesion, and the inner leads 7 group and the outer leads 8 group are covered with the insulating film 10. In the portion of the insulating film 10 facing each window hole 6 of the carrier body 3, the rectangular hole-shaped window hole 11 is slightly larger than the window hole 6 of the carrier body 3 so that the inner lead 7 group is exposed to the outside. Is open. Therefore, the tape carrier 2 is constituted by the carrier body 3, the inner lead 7 group, the outer lead 8 group, and the insulating film 10.

  As shown in FIG. 13, the chip 12 is formed in a square flat plate shape having a size substantially equal to one unit of the tape carrier 2, and one main surface side (hereinafter referred to as an active area side). Has a desired semiconductor integrated circuit including a semiconductor element. That is, the chip 12 is manufactured by forming a semiconductor integrated circuit on the active area side in the state of a semiconductor wafer in a so-called IC manufacturing pre-process, and dividing into a square flat plate shape in a dicing process. The surface of the chip 12 on the active area side is covered with a passivation film 13, and the electrode pad 14 is exposed to the outside in the opening formed in the passivation film 13. A plurality of electrode pads 14 are formed and correspond to the inner leads 7 in the tape carrier 2.

  The chip 12 thus configured is mechanically connected to the tape carrier 2 having the above-described configuration as shown in FIG. That is, the chip 12 is disposed on the tape carrier 2 such that each electrode pad 14 is aligned with each inner lead 7, and is bonded and mechanically connected between the passivation film 13 and the insulating film 10. In this state, each inner lead 7 is opposed to each electrode pad 14 at a position separated upward by the thickness of the insulating film 10 and the adhesive layer. In each inner lead 7, the pair of notches 9, 9 is arranged at a position offset to the left from directly above the electrode pad 14, and the substantially central portion of the long portion 7 b of the inner lead 7 is an electrode. It is in a state of being located directly above the pad 14.

  The bonding apparatus 20 shown in FIG. 12 includes a stage 21. The stage 21 is configured to hold the workpiece 1 according to the above configuration horizontally. An XY table 22 is provided on one side of the stage 21, and the XY table 22 is configured to move a bonding head 23 mounted thereon in the XY direction. The bonding head 23 supports one end of a bonding arm 24 having a bonding tool 25 attached to the tip. The bonding head 23 is configured to move the bonding tool 25 up and down by operating the bonding arm 24. Yes. The bonding arm 24 is provided with a position detection sensor 26. The position detection sensor 26 detects the vertical position of the bonding arm 24 and transmits it to a main controller described later.

  A controller (hereinafter referred to as an operation controller) 27 that controls these operations is connected to the XY table 22 and the bonding head 23, and a controller (hereinafter referred to as a main controller) that instructs the operation controller 27 to operate. 28 is connected. A display 29, a keyboard 29A, and a buzzer 29B as an alarm device are connected to the main controller 28.

  Next, a bonding method according to an embodiment of the present invention using the bonding apparatus according to the above configuration will be described with reference to FIG.

  As shown in FIG. 11A, when the bonding tool 25 pushes down the portion near the notch 9 of the long portion 7 b of the inner lead 7, the inner lead 7 is cut from the line connecting both the notches 9, 9. The

  As shown in FIG. 11B, the bonding tool 25 is further lowered, whereby the cut piece of the long portion 7 b of the inner lead 7 is pushed down and landed on the upper surface of the chip 12.

  Whether or not the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7 is determined by the main controller 28 by analyzing position data from the position detection sensor 26. When it is determined that the bonding tool 25 has not landed on the upper surface of the chip 12, the main controller 28 activates the buzzer 29 </ b> B as an alarm and displays the alarm content on the display 29. Next, the bonding tool 25 is gradually lowered and landed on the upper surface of the chip 12 via the inner lead 7 by manual operation of the keyboard 29A by the operator or automatic command control by the main controller 28.

  When it is determined that the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7, the main controller 28 reads position data from the position detection sensor 26 at the time of landing, and the position of the landing point on the upper surface of the chip 12 is read. Measure height.

  The main controller 28 that has measured the height of the bonding tool 25 raises the bonding tool 25 by a predetermined height H as shown in FIG. As for the predetermined height H, an optimum value corresponding to each different bonding condition is obtained by empirical methods such as experiments, computer simulations, and past performance data, and is stored in the main controller 28 by the keyboard 29A in advance. The main controller 28 commands a predetermined height H to the operation controller 27. The operation controller 27 controls the bonding head 23 to swing the bonding arm 24 to raise the bonding tool 25 by a predetermined height H.

  When the bonding tool 25 is raised by a predetermined height H, as shown in FIG. 11 (c), the cut piece of the long portion 7 b of the inner lead 7 is moved to the upper surface of the chip 12 by the spring back of the inner lead 7. Rise slightly away from In a state where the cut piece of the long portion 7b of the inner lead 7 is lifted from the chip 12, the bonding tool 25 that has been raised by a predetermined height H is separated from the upper surface of the cut piece of the long portion 7b of the inner lead 7 It has become.

  Subsequently, as shown in FIG. 11 (d), the bonding tool 25 is translated in the direction of the bump forming portion 4 to the position just above the electrode pad 14 while maintaining the height as it is. Along with this parallel movement, the cut piece of the long portion 7b of the inner lead 7 is shifted in the direction of the bump forming portion 4 by the bonding tool 25 and pushed down obliquely, so that the cut piece has a predetermined loop shape. Is formed, and the lower surface of the tip is in contact with the upper surface of the electrode pad 14.

  Next, as shown in FIG. 11 (e), the bonding tool 25 is lowered to push down the cut piece of the long portion 7 b of the inner lead 7. By this depression, the cut end side end portion of the cut portion of the long portion 7b of the inner lead 7 is pressed against the electrode pad 14 while forming a predetermined loop shape. The bonding tool 25 presses and contacts the electrode pad 14 with the end of the cut portion of the long portion 7b of the inner lead 7 against the electrode pad 14 and applies thermocompression (pressure contact) by applying heat and ultrasonic energy. That is, the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25.

  Thereafter, the chip 12 is electrically connected to the tape carrier 2 by repeating the above bonding operation for each inner lead 7. When bonding each inner lead 7, before the inner lead 7 is bonded to the electrode pad 14 of the chip 12 by the bonding tool 25, the height of the electrode pad 14 on the chip 12 with respect to the bonding tool 25 is sequentially measured. Bonding by the bonding tool 25 is performed under optimum conditions corresponding to each height. Therefore, for example, the inner lead 7 and the electrode pad that are bonded (thermocompression bonded) one after another by the bonding tool 25 when the chip 12 mechanically connected via the insulating film 10 under the bump forming portion 4 is inclined. Even if an error has occurred between each of the gaps 14 and 14, bonding by the bonding tool 25 is executed for each inner lead 7 under the optimum condition corresponding to the error between the respective inner leads 7. The loop shape of the inner lead 7 is appropriately formed.

  When the above-described bonding operation is completed for all the inner leads 7, as shown in FIG. 14, an insulating material such as elastomer or silicon rubber is potted inside each window hole 6 of the tape carrier 2. The inner lead 7 group is resin-sealed by the resin sealing portion 15.

  Next, a solder ball is soldered to a portion exposed at the bottom of each bump hole 5 in each outer lead 8 of the tape carrier 2 so as to protrude from the upper surface of the bump forming portion 4 as shown in FIG. Bumps 16 are formed on the tape carrier 2. As described above, the μBGA IC 17 shown in FIG. 14 is manufactured.

  According to the embodiment, the following effects can be obtained.

1) When the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25, before the inner lead 7 is bonded to the electrode pad 14 of the chip 12 by the bonding tool 25, the electrode pad 14 of the chip 12 with respect to the bonding tool 25 Each inner lead 7 is bonded to each electrode pad 14 with an appropriate loop shape by sequentially measuring the height and performing bonding with the bonding tool 25 under optimum conditions corresponding to each measured height. Therefore, the quality and reliability of the μBGA • IC 17 and the manufacturing yield can be improved.

2) For example, when the chip 12 mechanically connected via the insulating film 10 under the bump forming portion 4 is inclined, the distance between the inner lead 7 and the electrode pad 14 that are successively bonded by the bonding tool 25 Even if an error occurs between each of the inner leads 7, the bonding by the bonding tool 25 is performed under the optimum condition corresponding to the error between each inner lead 7. Any of the loop shapes can be formed appropriately.

3) Since the height measurement and the bonding after the measurement are continuously performed by a series of operations of the same bonding tool 25, the bonding work can be completed on the same stage, so the bonding work time is shortened. In addition, the structure of the bonding apparatus can be simplified.

  Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, the measurement of the height is not limited to each inner lead, but is performed by bringing the bonding tool into contact with at least three places on the upper surface, which is a plane including the electrode pad group in the chip, and calculating the parallelism of the chip. May be.

  In addition, the height measurement is not limited to being performed by bringing the bonding tool into contact with the upper surface, which is a plane including the electrode pad group of the chip, but can also be performed by using a non-contact type sensor such as a laser range finder. Good. The measurement by the non-contact sensor may be performed online or offline.

  The bonding method for electrically connecting the inner lead to the electrode pad is not limited to the ultrasonic thermocompression bonding method, and a pressure welding method, a eutectic method, or the like can be used.

  The bonding apparatus that performs bonding is not limited to single point bonding, but may be configured using an existing wire bonding apparatus.

  The carrier body which is a carrier of the inner lead group and the outer inner lead group is not limited to tape, but is made of an insulating resin film, a material such as a ceramic or an insulating resin. You may comprise by the board | substrate which has the formed rigidity.

  In the above description, the case where the invention made mainly by the present inventor is applied to the manufacturing method of μBGA • IC, which is the field of use behind it, has been described. However, the present invention is not limited to this, and other CSP • ICs are used. The present invention can be applied to all bonding techniques used in the manufacturing method and the like.

(Embodiment 3 of the invention)
FIG. 15 is a process diagram showing a method for manufacturing a μBGA • IC according to an embodiment of the present invention. FIG. 16 is a front view showing a bonding apparatus used therefor. FIG. 17 is a partially cut front view showing the main part. FIG. 18 is also a plan view. FIG. 19 is a partially cut front view including a block diagram. FIG. 20 is a partially omitted plan view showing the workpiece. FIG. 21A is a partially cut front view, and FIG. 21B is a partially cut side view. FIG. 22 shows a chip, where (a) is a plan view, (b) is a partially cut front view, and (c) is an enlarged partially cut side view. FIG. 23 is a perspective view showing a method for supplying and positioning a workpiece on a stage. 24A and 24B are explanatory diagrams for explaining a method for measuring the positional relationship between the inner lead and the electrode pad, wherein FIG. 24A is a screen view showing the entire workpiece, FIG. c) is a screen diagram showing the measurement step of the feature pad. FIG. 25 is an explanatory diagram for explaining each step of the inner lead recognition method. FIG. 26 is an explanatory diagram for explaining each step of the bonding method.

  In this embodiment, the method for manufacturing a semiconductor integrated circuit device according to the present invention is configured as a method for manufacturing an IC provided with μBGA (hereinafter referred to as μBGA · IC), and is a main process of bonding. Is implemented by the bonding apparatus shown in FIGS.

  As shown in FIG. 15, in this μBGA · IC manufacturing method, the work shown in FIGS. 20 to 21 is prepared in the work preparation process and supplied to the bonding process in which the bonding method is performed. Is done. That is, the workpiece 1 supplied to the bonding process is configured as shown in FIGS. The workpiece 1 is configured by mechanically connecting a chip to a tape carrier via an insulating layer. The tape carrier 2 as a carrier corresponds to a TAB (tape automated bonding) tape used in a method for manufacturing a TCP IC (IC having a tape carrier package). Since the tape carrier 2 is configured such that the same pattern is repeated in the longitudinal direction, the description and illustration of the configuration are made only for one unit.

  The tape carrier 2 is provided with a carrier main body 3 in which an insulating resin such as polyimide is used and the same pattern is integrally formed in a tape shape continuous in the longitudinal direction, and the bump forming portion 4 is provided in the longitudinal direction on the carrier main body 3. Are lined up in a line. A large number of bump holes 5 are arranged in the bump forming portion 4 so as to be aligned on four parallel lines. Each bump hole 5 is configured such that a bump described later is electrically connected to an outer lead described later. It has become so. On the center line of the bump forming portion 4, window holes 6 formed in a long hole shape are opened in parallel with the rows of the bump holes 5. In addition, four long holes 6A for assisting cutting are arranged in a rectangular frame shape in the outer peripheral portion of the bump forming portion 4 and opened.

  A plurality of inner leads 7 are wired on one side main surface (hereinafter referred to as a lower surface) of the carrier body 3 so as to protrude into the window hole 6 in the short direction. The outer leads 8 are connected in series to one end (hereinafter referred to as the outer end) of each inner lead 7 on the bump forming portion 4 side, and the inner lead 7 and the outer lead 8 that are arranged in series with each other. Is mechanically and electrically integrated. A portion of each outer lead 8 facing the bump hole 5 is exposed from the bump forming portion 4, and an outer end of each outer lead 8 extends to the outside of the long hole 6 </ b> A. The inner lead 7 group and the outer lead 8 group are formed using a conductive material such as copper or gold. As a method for forming the inner lead 7 group and the outer lead 8 group, a method of patterning a copper foil or a gold foil fixed to the carrier body 3 by an appropriate means such as welding or adhesion by lithography processing and etching processing, There is a method of selectively performing a gold plating process by a lithography process.

  The inner leads 7 are wired in parallel with each other at intervals in the longitudinal direction of each window hole 6. A portion of each inner lead 7 protruding into the window hole 6 is cut at a position straddling the center line of the window hole 6. That is, the length of the portion of the inner lead 7 protruding into the window hole 6 is set shorter than the width of the window hole 6 and longer than half the width.

  A large number of sprocket holes (hereinafter referred to as “holes”) 3A as regular parts arranged regularly are arranged at both ends of the carrier body 3 and arranged at equal intervals in the length direction. Each hole 3A is formed in a square hole shape. A pair of characteristic lead display holes (hereinafter referred to as display holes) 3B for displaying leads (hereinafter referred to as characteristic leads) 9A as characteristic portions on both sides of the outer lead 8 group in the carrier body 3 are paired. Each display hole 3B is formed in a square hole shape. A characteristic lead 9A is formed on the lower surface of the carrier body 3 of each display hole 3B, and each characteristic lead 9A is formed in a substantially h shape so as to be distinguished from the inner lead 7 and the outer lead 8 and is disposed sideways. ing.

  An insulating film 10 made of elastomer or silicon rubber is attached to the lower surface of the carrier body 3 by an appropriate means such as adhesion, and the inner leads 7 group and the outer leads 8 group are covered with the insulating film 10. In the portion of the insulating film 10 facing the window hole 6 of the carrier body 3, the rectangular hole-shaped window hole 11 is slightly larger than the window hole 6 of the carrier body 3 so that the inner lead 7 group is exposed to the outside. It is open. Therefore, the tape carrier 2 is constituted by the carrier body 3, the inner lead 7 group, the outer lead 8 group, and the insulating film 10.

  As shown in FIG. 22, the chip 12 is formed in a rectangular flat plate shape, and a desired semiconductor integrated circuit including a semiconductor element is provided on one main surface side (hereinafter referred to as an active area side). Is built. That is, the chip 12 is manufactured by forming a semiconductor integrated circuit on the active area side in the state of a semiconductor wafer in a so-called IC manufacturing pre-process, and dividing into a rectangular flat plate shape in a dicing process. The surface of the chip 12 on the active area side is covered with a passivation film 13, and the electrode pad 14 is exposed to the outside in the opening formed in the passivation film 13. A plurality of electrode pads 14 are formed and correspond to the inner leads 7 in the tape carrier 2. A pair of pads (hereinafter referred to as “feature pads”) 14A as feature portions are formed on both sides of the row of the electrode pad 14 group so that each feature pad 14A can be distinguished from the electrode pad 14. It is formed in a T shape.

  As shown in FIGS. 20 and 21, the chip 12 is mechanically connected to the tape carrier 2 in the work 1. That is, the chip 12 is bonded and mechanically connected between the passivation film 13 and the insulating film 10 in a state where the electrode pads 14 are aligned with the inner leads 7 on the tape carrier 2. . In this state, the inner lead 7 faces the electrode pad 14 at a position separated upward by the thickness of the insulating film 10 and the adhesive layer, and the tip of the inner lead 7 is directly above the electrode pad 14. It is in the state located in.

  As shown in FIG. 16, a stage 21 is set in the bonding apparatus 80, and the stage 21 is configured to hold the workpiece 1 according to the above configuration horizontally. As shown in FIG. 19, an XY table 22 is installed on one side of the stage 21, and the XY table 22 is configured to move a bonding head 23 mounted thereon in the XY direction. Yes. The bonding head 23 supports one end of a bonding arm 24 having a bonding tool 25 attached to the tip. The bonding head 23 is configured to move the bonding tool 25 up and down by operating the bonding arm 24. Yes. The bonding arm 24 is provided with a position detection sensor 26, and the position detection sensor 26 is connected to a main controller described later. A controller (hereinafter referred to as an operation controller) 27 that controls these operations is connected to the XY table 22 and the bonding head 23, and a controller (hereinafter referred to as a main controller) that instructs the operation controller 27 to operate. 28 is connected. A display 29 is connected to the main controller 28.

  The XY table 22 is provided with an industrial television camera (hereinafter referred to as a camera) 31 as an image capturing device for constituting the inner lead recognition device 30 by a stand 36, and the camera 31 is a workpiece 1 on the stage 21. Are supposed to be filmed. An inner lead recognition measurement line setting unit (hereinafter referred to as a setting unit) 32 for setting an inner lead recognition measurement line is connected to the camera 31, and a luminance measurement unit 33 is connected to the setting unit 32. . The luminance measuring unit 33 is connected to a forming unit 34 that forms an added luminance distribution waveform, and the forming unit 34 is connected to a determining unit 35 that determines the inner lead centerline. The determination unit 35 is connected to the main controller 28 and transmits a determination result to the main controller 28.

  As shown in FIG. 16, the bonding apparatus 80 includes a loading reel 81 and an unloading reel 82 for conveying the workpiece 1, and the workpiece 1 is stretched between the loading reel 81 and the unloading reel 82. It has been. A spacer tape take-up reel 83 is supported on the lower side of the loading reel 81, and the spacer tape take-up reel 83 is configured to take up the spacer tape 84 after the loading reel 81 has fed the workpiece 1. . A spacer tape supply reel 85 is supported below the unloading reel 82, and the spacer tape supply reel 85 is configured to supply the spacer tape 86 when the unloading reel 82 winds the workpiece 1. Yes.

  As shown in FIGS. 17 and 18, a heat block 88 that is moved up and down by a lift drive device 87 is installed at a place where the stage 21 of the bonding apparatus 80 is set. A recess 89 is dug down to accommodate the chip 12 of the workpiece 1. A lower presser 90 is formed by an outer portion of the recess 89 on the upper surface of the heat block 88. An upper presser 91 formed in a rectangular frame shape that is the same shape as the lower presser 90 is provided directly above the heat block 88, and the upper presser 91 is supported so as to be reciprocally rotated in the vertical direction by a rotary actuator 92. Has been. The upper presser 91 rotates downward and presses the periphery of the chip 12 of the work 1 against the lower presser 90 to fix the work 1 to the stage 21.

  A pair of guide rails 93, 93 are laid in parallel in the left-right direction and horizontally at both ends (hereinafter referred to as front side and rear side) ends of the workpiece 1 in the bonding apparatus 80. The work 1 is guided horizontally in a state in which both ends of the carrier body 3 in which the holes 3A are arranged are slidably sandwiched by both guide rails 93, 93, and the direction from the loading reel 81 to the unloading reel 82 To be sent to.

  A pair of feed rollers 94, 94 are rotatably supported in a state where both guide rails 93, 93 are separated from the stage 21 on the right and left sides in contact with the lower surfaces of both ends of the carrier body 3. A belt 96 driven by a feed motor 95 is wound around 94 and 94. On the upper side of the carrier body 3 between the feed rollers 94 and 94, a pair of front and rear pressing rollers 97 and 97 are disposed so as to sandwich the carrier body 3 in cooperation with the feeding roller 94. The rollers 97 and 97 are rotatably supported at one end of an arm 99 whose other end is rotatably supported by a pin 98 in the vertical direction. A spring 100 is locked at a position near the pin 98 of the arm 99 so as to urge the arm 99 downward, and an electromagnetic plunger 101 is positioned at a position closer to the pressing roller 97 than the spring 100 of the arm 99. Is engaged so as to move up and down.

  A pair of back tension rollers 102, 102 are rotatably supported in a state where both guide rails 93, 93 are separated from the stage 21 on the left side in front and back, in contact with the lower surfaces of both ends of the carrier body 3. A belt 104 driven by a back tension motor 103 is wound around the tension rollers 102 and 102. A pair of pressing rollers 105, 105 are arranged on the upper side of both the back tension rollers 102, 102 across the carrier body 3 so as to sandwich the carrier body 3 in cooperation with the back tension roller 102, Both pressing rollers 105, 105 are rotatably supported at one end of an arm 107 whose other end is rotatably supported by a pin 106 in the vertical direction. A spring 108 is locked at a position near the pin 106 of the arm 107 so as to urge the arm 107 downward, and an electromagnetic plunger 109 is positioned at a position closer to the pressing roller 105 than the spring 108 of the arm 107. Is engaged so as to move up and down.

  A hole viewing hole 110 is formed in a rectangular hole shape larger than the hole 3A opened in the carrier body 3 at a position away from the stage 21 of the rear guide rail 93 to the right side. A photo sensor 111 as a hall detection device is installed directly above and supported by a stand or the like. The photo sensor 111 is configured to detect the hole 3A through the hole peep hole 110. A work position controller 112 that controls the position of the work 1 based on the passage of the hole 3A is connected to the photosensor 111. The controller 112 controls the feed motor 95, the back tension motor 103, and the electromagnetic plungers 101 and 109 as described later. Configured to control.

  Hereinafter, a bonding method using the bonding apparatus according to the above configuration will be described.

  First, a method for supplying and positioning a workpiece on a stage will be described. In this description, the interval (one pitch) p between adjacent chips 12 and 12 in the carrier 2 is set to a dimension corresponding to four holes 3A of the carrier 2 as shown in FIG. It is assumed that

  In the state shown in FIG. 16, when the electromagnetic plunger 101 on the feeding side is extended by a preset sequence, the arm 99 is rotated downward by the spring 100 as shown in FIG. 17. Therefore, the pressing roller 97 is in a state where the carrier body 3 is sandwiched between the feed roller 94 and the elastic force of the spring 100. At the same time, when the electromagnetic plunger 109 on the back tension side is shortened, the arm 107 is rotated upward against the elastic force of the spring 108, so that the pressing roller 105 is a carrier between the back tension roller 102 and the back tension roller 102. The holding state of the main body 3 is released. Subsequently, when the feed roller 94 is rotated by the feed motor 95 based on a preset sequence, the carrier body 3 sandwiched between the feed roller 94 and the pressing roller 97 is moved from the loading reel 81 side to the unloading reel 82 side. Sent in the direction to.

  When the carrier 2 is fed by 3 pitches by the pitch P between the adjacent holes 3A and 3A by this feed operation, as shown in FIG. 23, the position of the photo sensor 111 is changed from the feed start position J1 to the second position. Move relative to J2. At this time, the second position J2 is uncertain because there is a slip between the feed roller 94 and the pressing roller 97 and the carrier body 3.

  When the carrier 2 is fed by the feed motor 95 by 2 pitches (2 × P) at the pitch P of the hole 3A, the back tension side electromagnetic plunger 109 is extended according to a preset sequence. When the back tension side electromagnetic plunger 109 is extended, the arm 107 is rotated downward by the elastic force of the spring 108, so that the pressing roller 105 moves the carrier body 3 between the back tension roller 102 and the elastic force of the spring 108. It is sandwiched between forces. Subsequently, when the back tension roller 102 is rotated by the back tension motor 103, the carrier body 3 sandwiched between the back tension roller 102 and the pressing roller 105 is pulled in the direction from the loading reel 81 side to the unloading reel 82 side. It is done. Thereby, the slack of the carrier 2 is removed.

  Next, the feed motor 95 performs an operation of feeding the carrier 2 by 1 pitch (1 × P) at the pitch of the holes 3A. With this feed, the position of the photosensor 111 moves relative to the third position J3, the fourth position J4, and the fifth position J5, as shown in FIG. However, if the photo sensor 111 detects the upstream opening edge of the hole 3A when passing through the third position J3, the feed motor 95 is stopped. When the feed motor 95 is stopped, the position of the photosensor 111 is relatively stopped at an arbitrary position between the third position J3 and the fourth position J4, that is, an intermediate position in the hole 3A.

  Next, the feed motor 95 performs an operation of feeding the carrier 2 by one (1 × W) in the width W of the hole 3A. Along with this feed, the position of the photosensor 111 surely exceeds the fourth position J4. However, the photosensor 111 stops the feed motor 95 when detecting the downstream opening edge of the hole 3A when passing through the fourth position J4. Thereby, the photo sensor 111 relatively stops at the fourth position J4.

  Next, the feed motor 95 feeds and stops the carrier 2 by a preset correction value K so that the center of the stage 21 and the center of the chip 12 are aligned. By this feed and stop operation, the photosensor 111 stops relatively at the fifth position J5. Since the fifth position J5 is always a constant position defined by the correction value K between the adjacent holes 3A and 3A, the workpiece 1 is always supplied to the fixed relational position with respect to the stage 21 and stopped. become.

  As described above, the photo sensor 111 detects the downstream opening edge of the hole 3A of the carrier 2 and sends the carrier 2 by a predetermined correction value K therefrom, whereby the size of the chip 12 and the inner leads 7 and Even when the length of the outer lead 8 is changed or when the pitch between the holes 3A or the size of the holes 3A is changed, numerical values relating to the size of the pitch, the number of pitches, and the correction value K are appropriately input. Since it is possible to respond quickly to a wide variety of changes through simple operations, it is possible to cope with mixed flow production such as model changes, and to improve the versatility of the bonding apparatus on the other side.

  As described above, when the workpiece 1 is supplied to a predetermined position with respect to the stage 21 and stopped, the heat block 88 is raised by the elevating drive device 87 and the upper presser 91 is moved by the rotary actuator 92. Is lowered. As the upper presser 91 is lowered, the work 1 is pressed against the lower presser 90 of the heat block 88, so that the work 1 is positioned with respect to the stage 21. Further, since the lower surface of the chip 12 of the work 1 is in contact with the bottom surface of the recess 89 of the heat block 88, the chip 12 is heated by the heat block 88.

  When the workpiece is positioned with respect to the stage, the positional relationship between the inner lead and the electrode pad in the workpiece is measured by a method described below and corrected as appropriate.

  As described above, since the workpiece 1 is always stopped at a preset positional relationship with respect to the stage 21, for example, as shown in FIG. 24, the center of the camera 31 and the center of the workpiece 1 are substantially matched. Can be made. In FIG. 24, assuming that the center of the camera 31 is the origin O of the coordinate of the workpiece 1, the coordinate position of the left feature lead 9A can be obtained from the design data of the workpiece 1.

  Therefore, as shown in FIG. 24B, the cutout window of the camera 31 is set at the coordinate position of the left feature lead 9A. Here, in the actual workpiece 1, the carrier main body 3, the hole 3A, and the like are not necessarily formed as designed, so that, for example, as shown in FIG. There is an error (ΔXa, ΔYa) between the lead 9A and the design feature lead 9A ′. This error (ΔXa, ΔYa) is obtained by the following algorithm.

  First, an actual feature lead 9A photographed by the camera 31 is image-recognized, and the center coordinates (Xa, Ya) with respect to the origin O are obtained by this recognition. The difference between the center coordinates (Xa, Ya) and the center coordinates (Xa ', Ya') with respect to the origin O of the design feature lead 9A is obtained. The difference value becomes an error value (ΔXa, ΔYa).

  Next, as shown in FIG. 24C, the cutout window of the camera 31 is set at the coordinate position of the left feature pad 14A. Here, in the actual workpiece 1, the chip 12 is not necessarily fixed to the carrier body 3 as designed. For example, as shown in FIG. There is an error (ΔXb, ΔYb) between the design feature lead 14A ′. The error values (ΔXb, ΔYb) are obtained by the same algorithm as in the case of the feature lead 9A.

  Thereafter, error values are obtained for the right feature lead 9A and feature pad 14A by the same method. By statistical processing on these error values, error values relating to the design coordinate positions of the inner leads 7 and the coordinate positions of the electrode pads 14 are obtained. Then, each of these error values is compared with a preset allowable value. If it is out of range, a warning is given that correction is impossible. When it is within the range, each correction value between the inner lead 7 and the electrode pad 14 facing each other is obtained.

  As described above, by determining the positional relationship between each inner lead 7 and each electrode pad 14 using the feature lead 9A and the feature pad 14A, the bonding work for the uncorrectable error can be omitted. For those that can be corrected, the accuracy of bonding can be improved by correction. Further, in the next inner lead recognition method, the cutout window of the camera 31 can be precisely set at the relative position between each inner lead 7 and each electrode pad 14.

  When the positional relationship between the inner lead and the electrode pad in the work is obtained as described above, the inner lead recognition method shown in FIG. 25 is executed.

  In FIG. 19, the main controller 28 drives the XY table 22 to move the camera 31 to the imaging position of the inner lead 7 to be bonded in the workpiece 1 placed on the stage 21. At this time, the position coordinates of the inner lead 7 obtained as described above are used. The camera 31 executes an image capturing process 41 (see FIG. 1, the same applies hereinafter), and images the inner lead 7 to be bonded. An image 51 shown in FIG. 25A captured by the camera 31 is displayed on the display 29 and input to the setting unit 32.

  The setting unit 32 executes the inner lead recognition measurement line setting step 42, and as shown in FIG. 25A, of the image scanning lines orthogonal to the inner leads 7 in the image 51, the electrode pads 14 are included. An inner lead recognition measurement line (hereinafter referred to as a center measurement line) 52 is set by one of the image scanning lines including the electrode pad 14, and each electrode pad is set by one of the image scanning lines on both sides of the electrode pad 14. Outer inner lead recognition measurement lines (hereinafter referred to as inner end measurement line and outer end measurement line, respectively) 53 and 54 are set.

  The luminance measurement unit 33 executes the luminance measurement step 43 to measure the luminance at each point on each scanning line for each of the central measurement line 52, the inner end measurement line 53, and the outer end measurement line 54, as shown in FIG. As shown in b), (c) and (d), a central measurement line luminance waveform 52a, an inner end measurement line luminance waveform 53a and an outer end measurement line luminance waveform 54a are formed. The central measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the outer end measurement line luminance waveform 54a are input to the forming unit 34.

  The forming unit 34 executes the forming step 44 to perform the central measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the outer end measurement line shown in FIGS. 25 (b), (c) and (d). The luminance waveform 54a is overlapped by matching each point on the scanning line, that is, by matching the time series, thereby forming the added luminance distribution waveform 55 shown in FIG. That is, the luminances of the central measurement line luminance waveform 52a, the inner end measurement line luminance waveform 53a, and the outer end measurement line luminance waveform 54a are added for each point, and the added luminance distribution waveform 55 is formed. The added luminance distribution waveform 55 is input to the determination unit 35.

  The determination unit 35 executes a determination step 45, and first sets a threshold value 56 for the added luminance distribution waveform 55 as shown in FIG. Subsequently, the center of gravity 58 in the region 57 of the added luminance distribution waveform 55 that is equal to or greater than the threshold value 56 is calculated, and the position facing the center of gravity 58 is determined as the position 59 of the center line of the inner lead 7 to be bonded. That is, the position of the inner lead 7 to be bonded is accurately recognized.

  The center line of the bonding tool 25 of the bonding apparatus 20 at the position 59 of the center line of the inner lead 7 determined as described above is operated by the operation of the XY table 22 under the control of the operation controller 27 based on the command of the main controller 28. By matching, the inner lead 7 is accurately bonded to the electrode pad 14 by the bonding tool 25 as shown in FIG.

  As shown in FIG. 26A, the bonding tool 25 does not land on the portion of the inner lead 7 directly above the electrode pad 14 and the bonding tool 25 does not land on the upper surface of the chip 12 via the inner lead 7. Press down to height. Whether or not the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7 is determined by the main controller 28 by analyzing position data from the position detection sensor 26 provided in the bonding arm 24.

  When the tip of the inner lead 7 is pushed down to a predetermined height, the bonding tool 25 is translated in the direction of the base end supported by the insulating film 10 of the inner lead 7 as shown in FIG. Is done. With this parallel movement, the inner lead 7 is bent into an S shape as a whole. That is, the base end portion of the inner lead 7 is bent in a loop shape that does not generate distortion, and the bottom surface of the distal end portion is in contact with the top surface of the electrode pad 14.

  At this time, the bonding tool 25 is not limited to be moved horizontally after being lowered vertically, but may be moved obliquely downward as indicated by the locus of an imaginary line in FIG.

  Next, as shown in FIG. 26 (c), the bonding tool 25 is returned to just above the center of the electrode pad 14, and then the bonding tool 25 is lowered vertically. By this lowering, the bonding tool 25 presses the tip of the inner lead 7 against the electrode pad 14. The bonding tool 25 presses the tip portion of the inner lead 7 against the electrode pad 14 and is thermocompression bonded by applying heat and ultrasonic energy. That is, the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25.

  Thereafter, the inner lead recognition method and the bonding method described above are repeated for each inner lead 7, whereby the chip 12 is electrically connected to the tape carrier 2. During bonding for each inner lead 7, the position 59 of the center line of the inner lead 7 is recognized before the inner lead 7 is bonded to the electrode pad 14 of the chip 12 by the bonding tool 25. Bonding by the bonding tool 25 is performed under optimum conditions corresponding to the position 59.

  When the above-described bonding operation is completed for all the inner leads 7, the tape carrier 2 is fed by 1 pitch p by the above-described operation to supply and position the workpiece onto the stage. Thereafter, the bonding process is sequentially executed on the workpiece 1 fed out from the loading reel 81 by repeatedly executing the above-described steps.

  Thereafter, as shown in FIG. 15, in the resin sealing body forming step in the μBGA · IC manufacturing method, an insulating material such as elastomer or silicon rubber is placed inside each window hole 6 of the tape carrier 2. The inner lead 7 group and the electrode pad 14 group are resin-sealed by the resin sealing portion 15 by being potted as shown in FIG.

  Further, in the bump forming step in the μBGA · IC manufacturing method, the solder balls are soldered to the portions exposed at the bottoms of the respective bump holes 5 in the respective outer leads 8 of the tape carrier 2. The protruding bumps 16 are formed on the tape carrier 2 as shown in FIG.

  The μBGA IC 17 shown in FIG. 28 is manufactured by the manufacturing method described above.

  Next, the bonding method shown in FIGS. 29 to 33 in which bonding with a bonding tool is performed after measuring the height of the chip will be described.

  As shown in FIG. 29, when the bonding tool 25 pushes down the tip of the inner lead 7, the inner lead 7 is bent downward starting from the upper edge of the window hole 11 of the insulating film 10.

  As shown in FIG. 30, when the bonding tool 25 is further lowered, the tip of the inner lead 7 is pushed down and landed on the upper surface of the chip 12.

  Whether or not the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7 is determined by the main controller 28 by analyzing position data from the position detection sensor 26. When it is determined that the bonding tool 25 has not landed on the upper surface of the chip 12, the main controller 28 gradually lowers the bonding tool 25 to land on the upper surface of the chip 12 via the inner lead 7.

  When it is determined that the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7, the main controller 28 reads position data from the position detection sensor 26 at the time of landing, and the position of the landing point on the upper surface of the chip 12 is read. Measure height.

  The main controller 28 that has measured the height of the bonding tool 25 raises the bonding tool 25 by a predetermined height H as shown in FIG. For the predetermined height H, an optimum value corresponding to each different bonding condition is obtained by empirical methods such as experiments, computer simulations, and past performance data, and is stored in the main controller 28 in advance. The main controller 28 commands a predetermined height H to the operation controller 27. The operation controller 27 controls the bonding head 23 to swing the bonding arm 24 to raise the bonding tool 25 by a predetermined height H.

  When the bonding tool 25 is raised by a predetermined height H, the tip of the inner lead 7 is slightly lifted away from the upper surface of the chip 12 by the spring back of the inner lead 7 as shown in FIG. In a state where the tip portion of the inner lead 7 is raised from the chip 12, the bonding tool 25 raised by a predetermined height H is in a state of being separated from the upper surface of the tip portion of the inner lead 7.

  Subsequently, as shown in FIG. 32, the bonding tool 25 is maintained in the same height, and is parallel to a predetermined position in the direction of the bump forming portion 4 and just above the center of the electrode pad 14. Moved. Along with this parallel movement, the inner lead 7 is shifted in the direction of the bump forming portion 4 by the bonding tool 25 and is pushed down obliquely, so that the intermediate portion is in a state in which a predetermined loop shape is formed, The bottom surface of the tip is in contact with the top surface of the electrode pad 14.

  Next, as shown in FIG. 33, the bonding tool 25 is moved vertically to the position immediately above the electrode pad 14 and then vertically lowered. By this lowering, the tip portion of the inner lead 7 is pressed against the electrode pad 14 with a predetermined force by the bonding tool 25 while a predetermined loop shape is formed. The bonding tool 25 presses the tip portion of the inner lead 7 against the electrode pad 14 and is thermocompression bonded by applying heat and ultrasonic energy. That is, the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25.

  As described above, when the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25, the bonding of the electrode pad 14 of the chip 12 is performed before the inner lead 7 is bonded to the electrode pad 14 of the chip 12 by the bonding tool 25. By measuring the height with respect to the tool 25 sequentially and performing bonding with the bonding tool 25 under optimum conditions corresponding to each measured height, each inner lead 7 has an appropriate loop shape on each electrode pad 14. Since bonding is possible, the quality and reliability of the μBGA • IC 17 and the manufacturing yield can be improved.

  For example, when the chip 12 mechanically connected via the insulating film 10 under the bump forming portion 4 is inclined, the distance between the inner lead 7 and the electrode pad 14 that are successively bonded by the bonding tool 25 is increased. Even if an error has occurred between each of the inner leads 7, bonding is performed by the bonding tool 25 under the optimum condition corresponding to the error between each inner lead 7. Any shape can be formed appropriately.

  Incidentally, when the error in the distance between the inner lead 7 and the electrode pad 14 is small, it is advantageous not to land the inner lead 7 on the chip 12 by the bonding tool 25 because the working time is shortened.

  Since the height measurement and the bonding after the measurement are continuously executed by a series of operations of the same bonding tool 25, the bonding work can be completed on the same stage, thereby reducing the bonding work time. And the structure of the bonding apparatus can be simplified.

  Note that the bonding tool 25 is not limited to the locus of the above-described embodiment, and may be controlled, for example, like the locus shown in FIG.

  In FIG. 34, S indicates a movement start point, and E indicates a movement end point. The movement start point S is set at the tip or notch portion of the inner lead, and the movement end point E is set at the electrode pad.

  The index shown in FIG. 34A can set the index earliest.

  The locus shown in FIG. 34B can form the inner lead into an S shape.

  The trajectory in FIG. 34C is effective when the chip surface can be detected and dust or the like enters between the stage and the chip when the chip is tilted and the height changes.

  The trajectory in FIG. 34 (d) is effective for cutting the inner leads bridged between the window holes and is effective for forming the inner leads.

  The locus shown in FIG. 34 (e) can form the inner lead into an S-shape and detect the chip surface.

  The trajectory in FIG. 34 (f) is also effective for cutting the inner lead that is bridged in the window hole while the inner lead can be formed into an S-shape.

  The locus in FIG. 34 (g) can detect the chip surface, and is effective for cutting the inner leads bridged between the window holes, and is effective for forming the inner leads.

  The trajectory of FIG. 34 (h) is effective for cutting the inner lead that can form the inner lead into an S-shape, detect the chip surface, and is bridged between the window holes, Effective for inner lead molding.

  In each drawing of FIG. 34, the vertical and horizontal movements may be set to oblique movements.

It is process drawing which shows the inner lead recognition method in the bonding method which is one Embodiment of this invention. It is each explanatory drawing explaining each process. It is a schematic diagram which shows the bonding apparatus which is one Embodiment of this invention. 1 shows a bonding method according to an embodiment of the present invention, in which (a) is an enlarged partial sectional view showing an inner lead cutting step, (b) is an enlarged partial sectional view showing a height measuring step, and (c) is a sectional view. FIG. 4 is an enlarged partial cross-sectional view showing a bonding tool raising step after height measurement, (d) is an enlarged partial cross-sectional view showing an inner lead forming step, and (e) is an enlarged partial cross-sectional view showing a bonding step. The workpiece | work is shown, (a) is a partially-omission plan view, (b) is a partially-omission front sectional view. The manufactured μBGA • IC is shown, (a) is a plan view, and (b) is a partially cut front view. It is process drawing which shows the inner lead recognition method in the bonding method which is embodiment of this invention. It is each explanatory drawing explaining each process. It is process drawing which shows the inner lead recognition method in the bonding method which is embodiment of this invention. It is each explanatory drawing explaining each process. 1 shows a bonding method according to an embodiment of the present invention, wherein (a) is a partial cross-sectional view showing an inner lead cutting step, (b) is a partial cross-sectional view showing a height measurement step, and (c) is a height. FIG. 7 is a partial cross-sectional view showing a bonding tool raising step after measurement, (d) is a partial cross-sectional view showing an inner lead forming step, and (e) is a partial cross-sectional view showing a bonding step. It is a schematic diagram which shows the bonding apparatus which is one Embodiment of this invention. The workpiece is shown, (a) is a partially omitted plan view, (b) is a partially omitted partially cut front view. The manufactured μBGA • IC is shown, (a) is a partially cut plan view, and (b) is a partially cut front view. It is process drawing which shows the manufacturing method of (micro | micron | mu) BGA * IC which is one Embodiment of this invention. It is a front view which shows the bonding apparatus used for it. It is a partially cut front view which shows the principal part. It is also a plan view. It is a partially cut front view similarly including a block diagram. It is a partially omitted plan view showing a work. (A) is a partially cut front view, and (b) is a partially cut side view. The chip | tip is shown, (a) is a top view, (b) is a partially cut front view, (c) is the expanded partially cut side view. It is a perspective view which shows the supply to the stage of a workpiece | work, and the positioning method. It is explanatory drawing for demonstrating the positional relationship measuring method of an inner lead and an electrode pad, (a) is a screen figure which shows the whole workpiece | work, (b) is a screen figure which shows the measurement step of a characteristic lead, (c) is a figure. It is a screen figure which shows the measurement step of a characteristic pad. It is each explanatory drawing explaining each process of an inner lead recognition method. It is each explanatory drawing explaining each process of the bonding method. It is front sectional drawing which shows manufactured (micro | micron | mu) BGA * IC. It is an external appearance perspective view similarly. It is a front sectional view of an initial bending process, showing a bonding method in which bonding with a bonding tool is performed after measuring the height of a chip. It is front sectional drawing of a landing process similarly. It is a front sectional view of the same ascent process. It is front sectional drawing of a parallel movement process similarly. It is a front sectional view of the same thermocompression bonding process. It is each locus | trajectory figure which shows the deformation | transformation form of the locus | trajectory of a bonding tool.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Work, 2 ... Tape carrier (carrier), 3 ... Carrier main body, 4 ... Bump formation part, 5 ... Bump hole, 6 ... Window hole, 7 ... Inner lead, 7a ... Short part, 7b ... Long part (cut part) 1), 8 ... Outer lead, 9 ... Notch, 10 ... Insulating film, 11 ... Window hole, 12 ... Chip, 13 ... Passivation film, 14 ... Electrode pad, 15 ... Resin sealing part, 16 ... Bump, 17 ... μBGA · IC (semiconductor device), 20 ... bonding device, 21 ... stage, 22 ... XY table, 23 ... bonding head, 24 ... bonding arm, 25 ... bonding tool, 26 ... position detection sensor, 27 ... actuation controller, 28 ... main controller 29 ... Display, 29A ... Keyboard, 29B ... Buzzer (alarm), 30 ... Inner lead recognition device, 31 ... Industrial use Levi camera (image capturing device), 32 ... inner lead recognition measurement line setting unit (setting unit), 33 ... luminance measuring unit, 34 ... forming unit, 35 ... determining unit, 36 ... stand, 41 ... image capturing step, 42 ... Inner lead recognition measurement line setting step, 43 ... luminance measurement step, 44 ... formation step, 45 ... determination step, 51 ... image, 52 ... center measurement line, 53 ... inner end measurement line, 54 ... outer end measurement line 52a ... Central measurement line luminance waveform, 53a ... Inner edge measurement line luminance waveform, 54a ... Outer edge measurement line luminance waveform, 55 ... Addition luminance distribution waveform, 55A ... More than addition threshold luminance distribution waveform, 56, 56A ... Threshold value 57, 57A ... area, 58 ... center of gravity, 59 ... center line position, 61 ... image capture step, 62 ... inner lead recognition measurement line setting step, 63 ... luminance measurement step, 64 ... formation step, 65 ... judgment process 71 ... Image, 72 ... Center measurement line, 72a ... Center measurement line luminance waveform, 73 ... Inner end measurement line, 73a ... Inner end measurement line luminance waveform, 74 ... Outer end measurement line, 74a ... Outer end Measurement line luminance waveform, 75 ... addition luminance distribution waveform, 76 ... threshold, 77 ... region, 78 ... center of gravity, 79 ... position of center line in the thickness direction (position in height direction), 80 ... bonding device, 81 ... Loading reel, 82... Unloading reel, 83. Spacer tape take-up reel, 84. Spacer tape, 85. Spacer tape feed reel, 86. Spacer tape, 87. ... Lower presser, 91 ... Upper presser, 92 ... Rotary actuator, 93 ... Guide rail, 94 ... Feed roller, 95 ... Feed motor, 96 ... Belt, 97 Pressing roller, 98 ... pin, 99 ... arm, 100 ... spring, 101 ... electromagnetic plunger, 102 ... back tension roller, 103 ... back tension motor, 104 ... belt, 105 ... pressing roller, 106 ... pin, 107 ... arm, 108 ... Spring, 109 ... Electromagnetic plunger, 110 ... Hole peeping hole, 111 ... Photo sensor, 112 ... Work position controller, 3A ... Sprocket hole (hole), 3B ... Features lead display hole (display hole), 6A ... Long hole, 9A ... feature lead, 14A ... feature pad.

Claims (9)

Supplying a chip lead composite tape in which a plurality of semiconductor integrated circuit chips are fixed to a carrier tape having a wiring pattern including a plurality of inner leads to a lead bonding apparatus;
A step of optically observing one unit region including one semiconductor integrated circuit chip among the plurality of semiconductor integrated circuit chips on the supplied chip lead composite tape in the lead bonding apparatus;
In the lead bonding apparatus, based on the result of the observation, the inner lead formed to protrude from the surface of the carrier tape to be connected to an electrode pad on one main surface of the one semiconductor integrated circuit chip Recognizing the center position of the inner tool and aligning the position of the tip of the bonding tool with the center of the inner lead;
In the lead bonding apparatus, after aligning the position of the tip portion of the bonding tool, connecting the inner lead and the electrode pad with the bonding tool;
A method for manufacturing a semiconductor integrated circuit device, comprising:   2. The inner lead bonding according to claim 1, wherein the inner lead center position is detected by acquiring image data of the inner lead with the electrode pad as a background, and obtaining a gravity center position of the image data. A method of manufacturing a semiconductor integrated circuit device.   3. The center position of the inner lead according to claim 2, wherein luminance information of the image of the electrode pad and the inner lead is captured at at least three locations including the electrode pad, and the inner lead is detected based on the luminance information. A method of manufacturing a semiconductor integrated circuit device, which is performed by obtaining a position of a center of gravity.   3. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein the bonding of the inner lead is performed for each inner lead by the bonding tool. Supplying a chip lead composite tape in which a plurality of semiconductor integrated circuit chips are fixed to a carrier tape having a wiring pattern including a plurality of inner leads to a lead bonding apparatus;
In the lead bonding apparatus, by optically observing one unit region including one semiconductor integrated circuit chip among the plurality of semiconductor integrated circuit chips on the supplied chip lead composite tape, Detecting the center position of the inner lead located on the electrode pad based on image data based on the relative positional relationship between the lead bonding apparatus and the electrode pad and the inner lead;
In the lead bonding apparatus, based on the detection result, a relative position is set so that the center of the bonding tool is aligned with the inner lead to be connected to the electrode pad on one main surface of the one semiconductor integrated circuit chip. Modifying the relationship;
In the lead bonding apparatus, after aligning the position of the center of the bonding tool, connecting the inner lead and the electrode pad by the bonding tool;
A method for manufacturing a semiconductor integrated circuit device, comprising:   6. The inner lead bonding according to claim 5, wherein the detection of the center position of the inner lead is performed by taking the image data of the inner lead with the electrode pad as a background and obtaining the position of the center of gravity of the image data. A method of manufacturing a semiconductor integrated circuit device.   7. The center position of the inner lead according to claim 6, wherein the luminance information of the image of the electrode pad and the inner lead is taken in at least three locations including the electrode pad, and the inner lead is detected based on the luminance information. A method of manufacturing a semiconductor integrated circuit device, which is performed by obtaining a position of a center of gravity.   8. The center-of-gravity position of the inner lead according to claim 7 is obtained by obtaining luminance information that is equal to or higher than a predetermined threshold value of the luminance information of the three locations based on the luminance information of the at least three locations. A method of manufacturing a semiconductor integrated circuit device, comprising: superimposing information to obtain a position of a center of gravity of the inner lead.   8. The center-of-gravity position of the inner lead according to claim 7, wherein the luminance information that is equal to or greater than a predetermined threshold with respect to the luminance information in which the luminance information of the three locations is preliminarily superimposed based on the luminance information of the at least three locations. To obtain the position of the center of gravity of the inner lead.

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