JP2000150581A - Semiconductor device and manufacture thereof and bonding device used therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily detect the damage and abnormal abrasion of a bonding tool. SOLUTION: A bonding device 20, in which each of electrode pads 14 of a chip 12 bonded to a tape carrier 2 having a plural inner leads 7 on a main surface by an insulating film 10 is bonded to each of the inner leads 7 by a bonding tool 25, has a camera 31, a recognition section 32, a registration section 34 and a judgment section 33. The bonding tool 25 is landed to a dummy pad 15 formed on a chip 12 and the image 42 of the landing impression 40 is taken by a camera 31 and recognized by the recognition section 32. The judgment section 33 compares the actual image 42 of the landing impression 40 to a normal image of landing impression registered in the registration section 34 and judges whether it is abnormal or not. This enables the bonding tool to be checked for damage or abnormal abrasion without removing it from a bonding arm and hence can improve an availability factor and a production yield.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for manufacturing a semiconductor device, and more particularly to a bonding technology for bonding an inner lead laid on a carrier to an electrode pad formed on a semiconductor chip (hereinafter referred to as a chip). , A chip size package (Chip Size Pac) having a size equal to or substantially equal to the size of the chip.
kage or Chip Scale Package
e. Hereinafter, it is called CSP. ) That are effective for use in a method of manufacturing a semiconductor integrated circuit device (hereinafter, referred to as an IC).

[0002]

2. Description of the Related Art As electronic devices using ICs have become smaller and thinner, there has been a demand for smaller IC packages. Various CSPs have been developed to meet this demand,
As an example, a micro
Ball grid array package (hereinafter referred to as μBGA
That. ). That is, a tape carrier is mechanically connected to the main surface on the electrode pad side of the chip by an insulating film, and each inner lead laid on the tape carrier is bonded to each electrode pad of the chip. In addition, bumps as external terminals are protruded by soldering.

As a bonding method of inner leads in the μBGA, a single point bonding method (hereinafter simply referred to as simply referred to as a single point bonding method) in which a large number of inner leads are pressed one after another by a bonding tool on each electrode pad arranged over the entire surface of a chip. Bonding method).

[0004] As an example describing the single point bonding technique, see the Industrial Research Council 1990
January 19, 2013 "TAB technology introduction" P193-P19
There are six.

[0005]

In the above-mentioned bonding method, the shape of the bonding tool affects the bonding state between the electrode pad and the inner lead. However, when the bonding tool is damaged or abnormal wear occurs. In addition, since there is no means for confirming the damage or abnormal wear, the bonding operation is continued. Then, when a defect in the bonding state is found by the sorting inspection after bonding, the bonding tool is removed from the bonding apparatus, and the bonding tool is inspected for damage or abnormal wear. Therefore, not only the operation time of the bonding apparatus decreases, but also
The production yield of C also decreases.

An object of the present invention is to provide a bonding technique which can easily detect damage or abnormal wear of a bonding tool.

[0007] The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0008]

The outline of a typical invention among the inventions disclosed in the present application is as follows.

That is, each electrode pad of a semiconductor chip, which is mechanically connected via an insulating film to a carrier having a plurality of inner leads laid on one principal surface, is bonded to each inner lead by a bonding tool. Wherein the bonding tool is landed on a dummy pad formed on the semiconductor chip, and the shape of the bonding tool is inspected by the shape of a landing impression of the bonding tool on the dummy pad.

Further, the bonding tool is landed on a dummy inner lead formed on the carrier, and the shape of the bonding tool is inspected by the shape of a landing impression of the bonding tool of the dummy inner lead.

According to the above-described means, since the shape of the bonding tool can be inspected based on the shape of the landing impression of the bonding tool, the presence or absence of damage or abnormal wear of the bonding tool can be checked without removing the bonding tool from the bonding apparatus. Can be inspected. Therefore, the number of defective semiconductor devices due to damage or abnormal wear of the bonding tool can be reduced, and the manufacturing yield can be improved. Further, since the bonding tool can be inspected without removing the bonding tool from the bonding apparatus, the operation efficiency of the bonding apparatus can be improved, and the throughput can be improved.

[0012]

FIG. 1 is a schematic view showing a bonding apparatus according to an embodiment of the present invention. 2A and 2B show a workpiece, in which FIG. 2A is a partially omitted plan view, and FIG. 2B is a partially omitted front sectional view. 3A and 3B show a μBGA · IC. FIG. 3A is a partially cut plan view, and FIG. 3B is a partially cut front view. FIG. 4 is an enlarged partial sectional view showing a bonding method according to an embodiment of the present invention. FIG. 5 is a screen diagram for explaining the operation.

In the present embodiment, a method of manufacturing a semiconductor device according to the present invention is directed to an IC having a μBGA (hereinafter referred to as an IC).
It is called μBGA · IC. )). The bonding step in the method of manufacturing the μBGA · IC is performed by the bonding apparatus shown in FIG. The work 1 in the bonding step of the method of manufacturing the μBGA · IC is configured as shown in FIG.

That is, the work 1 is configured such that the chip 12 is mechanically connected to the tape carrier 2 via the insulating layer. The tape carrier 2 as a carrier is TCP
IC (I with tape carrier package)
This corresponds to a TAB (tape automated bonding) tape used in the manufacturing method C). Since the same pattern is repeated in the tape carrier 2 in the longitudinal direction, the description and illustration of the configuration are made for only one unit.

The tape carrier 2 has a carrier body 3 integrally formed in a tape shape in which the same pattern is continuous in the longitudinal direction using an insulating resin such as polyimide. The parts 4 are longitudinally aligned in a row. A large number of bump holes 5 are formed in the bump forming section 4 and arranged on a square annular line. Each of the bump holes 5 is configured such that the bump is electrically connected to the outer lead. I have. On four sides of the bump forming portion 4, four window holes 6 formed in a trapezoidal long hole shape are arranged and opened in a square frame shape.

A plurality of inner leads 7 are wired on one main surface (hereinafter, referred to as a lower surface) of the carrier body 3 so as to straddle the window holes 6 in the lateral direction. One end of each inner lead 7 located on the bump forming portion 4 side (hereinafter, referred to as “the
The inside edge. ), Each of the outer leads 8 is connected in series, and the inner leads 7 and the outer leads 8 which are connected to each other are mechanically and electrically integrated with each other. Inner lead 7 group and outer lead 8
The group is formed using a conductive material such as copper or gold. The inner lead 7 group and the outer lead 8 group can be formed by, for example, patterning a copper foil or a gold foil fixed to the carrier body 3 by appropriate means such as welding or bonding by lithography and etching. There is a method of selectively performing a gold plating process by a lithography process. The portion of each outer lead 8 facing the bump hole 5 is exposed from the bump forming section 4.

The inner leads 7 are arranged in parallel with each other at intervals in the longitudinal direction of each window hole 6. A pair of triangular notches 9 are formed at both ends of a portion of each inner lead 7 bridged to the window hole 6 so as to cut inward at the pointed end. That is, the inner lead 7 can be easily cut at the line connecting the notches 9. In each inner lead 7, the pair of notches 9, 9 are arranged at positions offset from the center on the opposite side of the window hole 6 from the bump forming portion 4 (hereinafter referred to as the outside). That is, the length of the portion (hereinafter referred to as a short portion) 7a of the inner lead 7 on which the notches 9 and 9 are shifted toward the outside of the window hole 6 is such that the notches 9 and 9 of the inner lead 7 The length of the portion farther from the inner side (hereinafter, referred to as a long portion) 7b is shorter than the length of the portion 7b.

An insulating film 10 made of an elastomer or silicone rubber is applied to the lower surface of the carrier body 3 by an appropriate means such as adhesion, and the inner lead 7 group and the outer lead 8 group are covered with the insulating film 10. . Insulating film 1
At a position facing each window 6 of the carrier body 3 at 0, a window hole 11 having a rectangular hole shape is slightly larger than the window 6 of the carrier body 3 so that the inner leads 7 are exposed to the outside. Have been. Therefore, the tape carrier 2 includes the carrier body 3, the inner lead 7 group, the outer lead 8 group, and the insulating film 10.

As shown in FIG. 2, the chip 12 is formed in the shape of a square plate having a size substantially equal to one unit of the tape carrier 2, and its one main surface side (hereinafter referred to as an active area side). ), A desired semiconductor integrated circuit including a semiconductor element is manufactured. That is, the chip 12 is manufactured by forming a semiconductor integrated circuit on the active area side in a state of a semiconductor wafer in a so-called IC manufacturing pre-process, and dividing the chip into a square plate shape in a dicing process. The surface on the active area side of the chip 12 is covered with a passivation film 13, and an electrode pad 14 is formed in an opening formed in the passivation film 13 so as to be exposed to the outside. A plurality of electrode pads 14 are formed and correspond to the respective inner leads 7 of the tape carrier 2. A dummy pad 15 on which a bonding tool can land is formed at a position on the active area side surface of the chip 12 where no electrode pad 14 is provided.

The chip 12 configured as described above is mechanically connected to the tape carrier 2 according to the above configuration, as shown in FIG. In other words, the chip 12 is such that each electrode pad 14 is
And are mechanically connected between the passivation film 13 and the insulating film 10 by bonding. In this state, each inner lead 7 is in a state of facing each electrode pad 14 at a position separated upward by the thickness of the insulating film 10 and the adhesive layer. In each of the inner leads 7, the pair of notches 9, 9 are arranged at a position deviated to the left from directly above the electrode pad 14, and a substantially central portion of a long portion 7b of the inner lead 7 is It is located just above the pad 14.

The bonding apparatus 20 shown in FIG.
Has a stage 21, and the stage 21 is configured to horizontally hold the work 1 according to the above configuration. An XY table 22 is provided on one side of the stage 21, and the XY table 22 is configured to move a bonding head 23 mounted thereon in the XY directions. The bonding head 23 supports one end of a bonding arm 24 having a bonding tool 25 attached to the tip.
Reference numeral 3 is configured to move the bonding tool 25 up and down by operating the bonding arm 24.

The bonding arm 24 is provided with a position detecting sensor 26, and the position detecting sensor 26 is connected to a main controller described later. The XY table 22 and the bonding head 23 are connected to a controller (hereinafter, referred to as an operation controller) 27 for controlling the operation thereof, and a controller (hereinafter, referred to as a main controller) for instructing the operation to the operation controller 27. 28 are connected. A display 29 is connected to the main controller 28. Further, an ultrasonic oscillator 30 is connected to the bonding arm 24, and the ultrasonic oscillator 30 vibrates the bonding tool 27 via the bonding arm 24.

The XY table 22 has an industrial television camera (hereinafter referred to as a camera) 3 as an image capturing device.
1 is equipped with a stand 35 and a camera 31
Is adapted to shoot the work 1 on the stage 21. The camera 31 is connected to a recognition unit 32 for recognizing the impression of the bonding tool 25 formed on the dummy pad 15, and a recognition unit 32 is connected to the recognition unit 32. A registration unit 34 for registering a normal image of the bonding tool 25 is connected to the determination unit 33.
Is configured to collate the data from the registration unit 34 with the data from the recognition unit 32 to determine whether they are the same. The determination unit 33 is connected to the main controller 28, and transmits a determination result to the main controller 28. The camera 31 is provided with a lighting device 36,
The illumination device 36 is configured such that the light amount is adjusted by a light amount adjustment device 37.

Next, a bonding method according to an embodiment of the present invention using the bonding apparatus having the above configuration will be described with reference to FIG.

As shown in FIG. 4A, when the bonding tool 25 pushes down a portion of the long portion 7b of the inner lead 7 near the notch 9, the inner lead 7 is connected to a line connecting the notches 9, 9. Disconnected from

As shown in FIG. 4B, when the bonding tool 25 is further lowered, the cut piece of the long portion 7b of the inner lead 7 is pushed down and lands on the upper surface of the chip 12. .

The main controller 28 determines whether or not the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7 by analyzing position data from a position detection sensor 26 provided on the bonding arm 24. Is done. If it is determined that the bonding tool 25 has not landed on the upper surface of the chip 12, the main controller 28 activates a warning device such as a buzzer and displays the contents of the warning on the display 29. Next, the bonding tool 25 is gradually lowered by the manual operation of the keyboard by the operator or the automatic command control by the main controller 28, and is landed on the upper surface of the chip 12 via the inner lead 7.

When it is determined that the bonding tool 25 has landed on the upper surface of the chip 12 via the inner lead 7, the main controller 28 reads the position data from the position detection sensor 26 at the time of landing and reads the chip 1
The height of the landing point on the upper surface of 2 is measured.

The main controller 28 having measured the height of the bonding tool 25 raises the bonding tool 25 by a predetermined height H as shown in FIG. 4C. For the predetermined height H, an optimum value corresponding to each different bonding condition is obtained by an experiment, simulation by a computer, and empirical methods such as past performance data, and is stored in the main controller 28 in advance by a keyboard. The main controller 28 commands the predetermined height H to the operation controller 27. The operation controller 27 is a bonding head 2
The bonding tool 25 is raised by a predetermined height H by swinging the bonding arm 24 by controlling 3.

When the bonding tool 25 is raised by a predetermined height H, as shown in FIG. 4C, the cut piece of the long portion 7b of the inner lead 7 is chipped by the springback of the inner lead 7. 12 slightly above the upper surface. The long part 7 of the inner lead 7
In the state where the cut piece of b has risen from the chip 12,
The bonding tool 25 raised by a predetermined height H is
The long part 7b of the inner lead 7 is separated from the upper surface of the cut piece.

Subsequently, as shown in FIG. 4D, the bonding tool 25 is translated in the direction of the bump forming portion 4 to a position directly above the electrode pad 14 while maintaining the same height. You. Along with this parallel movement, the cut piece of the long portion 7b of the inner lead 7 is displaced in the direction of the bump forming section 4 by the bonding tool 25 and is pushed down obliquely, so that the cut piece has a predetermined loop shape. Is formed, and the lower surface of the tip portion is brought into contact with the upper surface of the electrode pad 14.

Next, as shown in FIG. 4E, the bonding tool 25 is lowered to push down the cut piece of the long portion 7b of the inner lead 7. Due to this depression, the cut-side end of the cut portion of the long portion 7b of the inner lead 7 is pressed against the electrode pad 14 while forming a predetermined loop shape. The bonding tool 25 presses the cut-side end of the cut portion of the long portion 7b of the inner lead 7 against the electrode pad 14, and performs thermocompression (pressure contact) by applying heat and ultrasonic energy. That is, the inner lead 7 is bonded to the electrode pad 14 by the bonding tool 25.

Thereafter, the bonding method described above is repeated for each inner lead 7, so that the chip 12
Are electrically connected to the tape carrier 2.

When the above-described bonding operation has been completed for all the inner leads 7, as shown in FIG. 3, an insulating material such as an elastomer or silicon rubber is potted inside each window 6 of the tape carrier 2. Thus, the inner lead 7 group is resin-sealed by the resin sealing portion 17.

Next, solder balls are soldered to the exposed portions of the outer leads 8 of the tape carrier 2 at the bottoms of the bump holes 5, as shown in FIG. A bump 18 protruding from the tape carrier 2 is formed. As described above, the μBGA IC 19 shown in FIG. 3 is manufactured.

In the bonding method described above, the shape of the bonding tool 25 is different from that of the electrode pad 1.
4 and the inner lead 7. In the conventional bonding apparatus, when the bonding tool 25 is damaged or abnormally worn, there is no means for confirming the damage or abnormal wear, so that the bonding operation described above is continued as it is. Then, when a defect in the bonding state is found by the sorting inspection after bonding, the bonding tool 25 is detached from the bonding arm 24 and the bonding tool 25 is removed.
Inspection for damage and abnormal wear. Therefore, not only the operation time of the bonding apparatus is reduced, but also the IC
Production yield also decreases.

Therefore, in this embodiment, before the above-described bonding operation is performed, the bonding tool 25 is inspected for damage or abnormal wear. Next, this inspection method will be described.

When the work 1 is positioned on the stage 21, the tip of the bonding tool 25 is opposed to the dummy pad 15 formed on the chip 12 of the work 1, and is bonded by the bonding head 23 under the same conditions as in the normal bonding described above. The bonding tool 25 is pressed. By the pressing operation of the bonding tool 25, the bonding tool 2 is attached to the dummy pad 15.
The indentation 40 having the tip shape of No. 5 is engraved as shown in FIG.

When the impression 40 is imprinted on the dummy pad 15, the bonding tool 25 is moved from the position of the dummy pad 15. Subsequently, the impression 40 of the bonding tool 25 formed on the dummy pad 15 is photographed by the camera 31 and recognized by the recognition unit 32. The image of the impression 40 of the bonding tool 25 recognized by the recognition unit 32 is transmitted to the determination unit 33.

The judging section 33 compares the indentation image of the normal bonding tool 25 registered in the registration section 34 in advance with the recognition section 3.
The actual image transmitted from the second image is compared with the actual image, and if the difference is outside the allowable range, it is determined that there is an abnormality with damage or abnormal wear. For example, a normal bonding tool 25
5A is an image 41 shown in FIG. 5A, and an image of the actual bonding tool 25 transmitted from the recognition unit 32 is an image 42 shown in FIG.
In the case of, the chipping of the bonding tool 25 has occurred, so that it is determined to be abnormal.

When it is determined that the bonding tool 25 is abnormal, the determination unit 33 transmits to the main controller 28 that the bonding tool 25 has an abnormality. Main controller 28
Stops the continuation of the bonding operation, and alerts the operator to the buzzer or the display 29 that an abnormality has occurred in the bonding tool 25.

According to the above embodiment, the following effects can be obtained.

1) When bonding the inner lead to the electrode pad by the bonding tool, before the inner lead is bonded to the electrode pad of the chip by the bonding tool, an indent is imprinted on the dummy pad by the bonding tool, and the bonding tool is formed by the engraving. By inspecting the shape of the bonding tool, it is possible to confirm the presence or absence of damage or abnormal wear of the bonding tool. Therefore, it is possible to prevent occurrence of bonding failure due to shape abnormality such as damage or abnormal wear of the bonding tool.

2) By preventing the occurrence of bonding failure due to abnormal shape such as damage or abnormal wear of the bonding tool, the bonding method and μBGA /
The manufacturing yield of the IC manufacturing method can be improved.

3) Since the bonding tool can be inspected for damage or abnormal wear without removing the bonding tool from the bonding arm, the operation efficiency of the bonding apparatus can be improved, and the productivity can be improved. Can be enhanced.

4) The indentation image of the normal bonding tool registered in advance and the indentation image of the actual bonding tool are compared by a pattern matching method, and the presence or absence of chipping or abnormal wear of the bonding tool is automatically determined. In addition, since a quantitative determination can be made instead of a visual determination by a human, labor can be saved, and a human error and a determination error can be prevented.

FIG. 6 shows a μBG according to another embodiment of the present invention.
A and IC are shown, (a) is a partially cut plan view,
(B) is a partially cut front view.

This embodiment is different from the above embodiment in that
A dummy inner lead 16 against which the bonding tool 25 is pressed is provided.
Is that an indentation 40 of the bonding tool 25 is imprinted.

Also in this embodiment, since the shape of the bonding tool 25 can be inspected by the impression 40 imprinted on the dummy inner lead 16, the same operation and effect as those of the above embodiment can be obtained.

FIG. 7 is a schematic view for explaining a bonding method according to another embodiment of the present invention.

In the bonding method according to the present embodiment, damage or abnormal wear of the bonding tool is inspected according to the height position of the bonding tool. That is,
As described with reference to FIG.
, The height position of the bonding tool 25 is transmitted from the position detection sensor 26. The main controller 28 collates the actual height of the bonding tool 25 transmitted from the position detection sensor 26 with the height of the normal bonding tool 25 registered in advance, and if the difference exceeds the allowable range. Is judged to be abnormal with damage or abnormal wear. For example, the height of the normal bonding tool 25 is the height 51 shown in FIG. 7A, and the actual height of the bonding tool 25 transmitted from the position detection sensor 26 is shown in FIG. If the height 52 is shown in ()), it is determined that the bonding tool 25 is abnormal because the bonding tool 25 is chipped.

According to this embodiment, it is possible to automatically inspect the bonding tool for damage or abnormal wear without providing dummy pads or dummy inner leads.

The invention made by the inventor has been specifically described based on the embodiments. However, the invention is not limited to the above-described embodiments, and can be variously modified without departing from the gist of the invention. Needless to say, there is.

For example, the inspection work of the bonding tool is not limited to be performed before the start of the bonding work.
It may be carried out after the end of the bonding operation or the like. In addition, the inspection work of the bonding tool is not limited to being performed for each product, but may be performed intermittently every other product, or may be performed irregularly when a change occurs in the bonding state. You may.

The dummy pad may be formed of aluminum in order to easily make an impression of the bonding tool. Further, the dummy inner lead may be coated with a gold plating film or a silver plating film in order to easily make an impression of the bonding tool.

The recognition of the indentation of the bonding tool imprinted on the dummy pad or the dummy inner lead and the determination based on the indentation are not limited to being automatically performed, and may be performed by a human looking at a display or the like.

In the above description, the invention made mainly by the present inventor has been applied to the μBG
A case where the present invention is applied to a method for manufacturing an A / IC has been described, but the present invention is not limited to this.
The present invention can be applied to an IC manufacturing method and a general bonding technique used for TCP / IC.

[0058]

The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.

By inspecting the shape of the bonding tool based on the shape of the indentation of the bonding tool formed by landing the bonding tool on the dummy pad or the dummy inner lead, it is possible to inspect whether the bonding tool is damaged or abnormally worn. Therefore, the number of defective semiconductor devices due to damage or abnormal wear of the bonding tool can be reduced, and the manufacturing yield can be improved. Further, since the bonding tool can be inspected without removing the bonding tool from the bonding apparatus, the operation efficiency of the bonding apparatus can be improved, and the throughput can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a bonding apparatus according to an embodiment of the present invention.

FIGS. 2A and 2B show a workpiece, wherein FIG. 2A is a partially omitted plan view, and FIG.

3A and 3B show a μBGA · IC, wherein FIG. 3A is a partially cut plan view, and FIG. 3B is a partially cut front view.

FIG. 4 is an enlarged partial sectional view showing each step of a bonding method according to an embodiment of the present invention.

FIG. 5 is a screen diagram for explaining the operation.

6A and 6B show a μBGA IC according to another embodiment of the present invention, wherein FIG. 6A is a partially cut plan view, and FIG. 6B is a partially cut front view.

FIG. 7 is a schematic view for explaining a bonding method according to another embodiment of the present invention.

[Explanation of symbols]

1 ... Work, 2 ... Tape carrier, 3 ... Carrier body,
4 ... Bump forming part, 5 ... Bump hole, 6 ... Window hole, 7 ...
Inner lead, 8 ... Outer lead, 9 ... Notch, 10 ...
Insulating film, 11: window hole, 12: chip (semiconductor chip),
13 ... passivation film, 14 ... electrode pad, 15 ...
Dummy pad, 16: dummy inner lead, 17: resin sealing portion, 18: bump, 19: μBGA / IC (semiconductor device), 20: bonding device, 21: stage, 2
2 ... XY table, 23 ... bonding head, 24 ...
Bonding arm, 25 Bonding tool, 26
... Position detection sensor, 27 ... Operation controller, 28 ... Main controller, 29 ... Display, 30 ... Ultrasonic oscillator, 31 ... Camera, 32 ... Recognition unit, 33 ... Determination unit,
34 ... registration unit, 35 ... stand, 36 ... lighting device, 37
... light amount adjusting device, 40 ... indentation of bonding tool, 4
1: Normal indentation image, 42: Actual indentation image, 51: Normal bonding tool height, 52: Actual bonding tool height

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masayuki Mochizuki 3-3-2 Fujibashi, Ome-shi, Tokyo Inside Hitachi Tokyo Electronics Co., Ltd. (72) Inventor Yoshifumi Katayama 3-2-2 Fujibashi, Ome-shi, Tokyo Hitachi East Within Kyoto Electronics Co., Ltd. (72) Inventor Tatsuyuki Okubo 3-3-2 Fujibashi, Ome-shi, Tokyo F-term within Hitachi Tokyo Electronics Co., Ltd. 5F044 MM38 NN03 NN10 PP02

Claims (8)

[Claims] A semiconductor chip is mechanically connected via an insulating film to a carrier having a plurality of inner leads laid on one principal surface, and each electrode pad of the semiconductor chip is bonded to each of the inner leads. The semiconductor device according to claim 1, wherein a dummy pad which can be landed by a bonding tool for bonding the inner lead and the electrode pad is formed on the semiconductor chip. 2. A semiconductor chip is mechanically connected via an insulating film to a carrier having a plurality of inner leads laid on one main surface, and each electrode pad of the semiconductor chip is bonded to each inner lead. The semiconductor device according to claim 1, wherein a dummy inner lead, which can be landed by a bonding tool for bonding the inner lead and the electrode pad, is formed on the carrier. 3. A semiconductor chip is mechanically connected via an insulating film to a carrier having a plurality of inner leads laid on one main surface, and each electrode pad of the semiconductor chip is bonded to each of the inner leads. In the method of manufacturing a semiconductor device, a landable dummy pad of a bonding tool for bonding the inner lead and the electrode pad is formed on the semiconductor chip, the bonding tool is landed on the dummy pad, and the bonding of the dummy pad is performed. A method of manufacturing a semiconductor device, wherein a shape of the bonding tool is inspected based on a shape of a landing impression of the tool. 4. A semiconductor chip is mechanically connected, via an insulating film, to a carrier having a plurality of inner leads laid on one principal surface, and each electrode pad of the semiconductor chip is bonded to each of the inner leads. In the method of manufacturing a semiconductor device, a landable dummy inner lead of a bonding tool for bonding the inner lead and the electrode pad is formed on the carrier, and the bonding tool is landed on the dummy inner lead. A method of manufacturing the semiconductor device, wherein the shape of the bonding tool is inspected according to the shape of the landing impression of the bonding tool. 5. A semiconductor chip is mechanically connected via an insulating film to a carrier having a plurality of inner leads laid on one main surface, and each electrode pad of the semiconductor chip is bonded to each inner lead. In the method of manufacturing a semiconductor device, the shape of the bonding tool is inspected by comparing the height of the bonding tool when bonding the inner lead and the electrode pad with the height of the bonding tool when normal. A method for manufacturing a semiconductor device, comprising: 6. An electrode pad of a semiconductor chip which is mechanically connected via an insulating film to a carrier having a plurality of inner leads laid on one main surface thereof is bonded to each inner lead by a bonding tool. Wherein the bonding tool is landed on a dummy pad formed on the semiconductor chip, and the shape of the bonding tool is inspected by the shape of a landing impression of the bonding tool on the dummy pad. . 7. An electrode pad of a semiconductor chip, which is mechanically connected to a carrier having a plurality of inner leads laid on one main surface thereof via an insulating film, is bonded to the inner leads by a bonding tool. Wherein the bonding tool is landed on a dummy inner lead formed on the carrier, and the shape of the bonding tool is inspected by the shape of the landing impression of the bonding tool of the dummy inner lead. apparatus. 8. An electrode pad of a semiconductor chip mechanically connected to a carrier having a plurality of inner leads laid on one main surface thereof via an insulating film, the electrode pads being bonded to the inner leads by a bonding tool. In the bonding apparatus, the shape of the bonding tool is inspected by comparing the height of the bonding tool when bonding the inner lead and the electrode pad with the height of the bonding tool when normal. Characteristic bonding equipment.