JP2005229065A - Method for manufacturing multi-layer and double-sided substrate - Google Patents

Method for manufacturing multi-layer and double-sided substrate Download PDF

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JP2005229065A
JP2005229065A JP2004038872A JP2004038872A JP2005229065A JP 2005229065 A JP2005229065 A JP 2005229065A JP 2004038872 A JP2004038872 A JP 2004038872A JP 2004038872 A JP2004038872 A JP 2004038872A JP 2005229065 A JP2005229065 A JP 2005229065A
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protrusion
film
base material
elastic body
substrate
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Yasushi Inatani
裕史 稲谷
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Fujikura Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a multi-layer and double-sided substrate in a laminate type for reducing the percent defective of a product. <P>SOLUTION: At least one or more protrusions 1 are formed on the surface of a flat first base material 3, and an insulating film and an elastic body 7 are successively arranged so as to be overlapped on the surface of the first base material 3 formed with the protrusions 1; and the elastic body 7 is pressurized with a fixed pressure, while the film is heated so that the film arranged on the protrusions can be adhered to the first base material 3 with the elastic force of the elastic body 7, and that the film thickness on the protrusions can be thinly expanded. The surface of the thinly expanded film is removed by a plasma etching method so that the film can be removed with a uniform thickness in the atom level. As a result, the insulating film of even a thin substrate, which is easily folded such as a flexible substrate, can be removed with uniform thickness. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、あらゆる電子機器に使用される積層タイプの多層及び両面基板の製造方法に関し、特に、突起を用いて多層及び両面基板間の層間導通を実現する積層タイプの多層及び両面基板の製造方法に関する。   BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a multilayer type multilayer board and a double-sided board used in any electronic device, and more particularly, to a method for manufacturing a multilayer type multilayer board and a double-sided board using a protrusion to realize interlayer conduction between the multilayer board and the double-sided board About.

図2を参照して、突起を用いた積層タイプの多層及び両面基板の製造方法を説明する。ここで図2(a)〜(c)は、突起を備えた多層及び両面基板の製造方法を示す工程図である。   With reference to FIG. 2, the manufacturing method of the lamination type multilayer using a protrusion and a double-sided board | substrate is demonstrated. Here, FIGS. 2A to 2C are process diagrams showing a method for manufacturing a multilayer and double-sided substrate having protrusions.

まず図2(a)に示すように、導電性材料(例えば銅箔)からなる平坦面を有する第1基材103を用意し、この第1基材103の表面上にメッキ法、又はエッチング法を用いて突起101を形成する。例えばメッキ法を用いて突起を形成する場合は、突起を形成する領域以外をマスクで覆い、開口されたマスク開口部にメッキ法により導電性材料を積層させることで突起101を形成する。一方、エッチング法を用いて突起を形成する場合は、第1基材103上にエッチングレジスト層(図示せず)を積層し、このエッチングレジスト層の上面の図示しない所要位置に突起形成用パターンを配置し、その上から紫外線を露光して現像し、突起形成用パターン以外のエッチングレジスト層を除去した後、エッチング液を用いてエッチングレジスト層で保護された突起形成用パターンを残して導電性材料を除去して、最後に突起形成用パターン上のエッチングレジスト層を剥離することで突起101を形成する。   First, as shown in FIG. 2A, a first base material 103 having a flat surface made of a conductive material (for example, copper foil) is prepared, and a plating method or an etching method is provided on the surface of the first base material 103. The protrusion 101 is formed using For example, in the case where the projection is formed using a plating method, the region other than the region where the projection is to be formed is covered with a mask, and the projection 101 is formed by laminating a conductive material in the opened mask opening by the plating method. On the other hand, in the case of forming protrusions using an etching method, an etching resist layer (not shown) is stacked on the first base material 103, and a protrusion forming pattern is formed at a required position (not shown) on the upper surface of the etching resist layer. The conductive material is disposed, exposed to ultraviolet light from the surface, developed, and after removing the etching resist layer other than the protrusion forming pattern, the conductive film is left with the protrusion forming pattern protected by the etching resist layer using an etching solution. Is removed, and finally the etching resist layer on the protrusion formation pattern is peeled to form the protrusion 101.

次いで図2(b)に示すように、上記工程で形成された突起形成面に絶縁性の樹脂を塗布して第1基材103の表面を覆いつつ突起101の先端が突出する膜厚を有する絶縁層105を形成する。   Next, as shown in FIG. 2B, the protrusion 101 formed by the above process is coated with an insulating resin so as to cover the surface of the first base material 103 and have a film thickness at which the tip of the protrusion 101 protrudes. An insulating layer 105 is formed.

続いて図2(c)に示すように、突起先端部のみが露出した絶縁層105上に導電性材料からなる第2基材107を配置し、第2基材107を第1基材103の方向に押圧することで2枚の基材と接合する。このとき第1基材103上に形成された突起101が、第2基材107面で押し潰されることで2枚の基材が電気的に導通する。このような構成を有する積層タイプの多層及び両面基板は、特許文献1及び特許文献2に開示されている。   Subsequently, as shown in FIG. 2C, the second base material 107 made of a conductive material is disposed on the insulating layer 105 where only the protrusion tip is exposed, and the second base material 107 is attached to the first base material 103. Bonding with two substrates by pressing in the direction. At this time, the protrusions 101 formed on the first base material 103 are crushed on the surface of the second base material 107, whereby the two base materials are electrically connected. Multilayer and double-sided substrates having such a configuration are disclosed in Patent Document 1 and Patent Document 2.

一方、図2(b)に示した絶縁層105の積層形成工程において、絶縁性樹脂を塗布して絶縁層105を形成する方法に代えて、絶縁性フィルムを被せて絶縁層105を形成する方法もある。図3(a),(b)に絶縁性フィルムを適用した場合の製造方法を示す。   On the other hand, in the step of forming the insulating layer 105 shown in FIG. 2B, a method of forming the insulating layer 105 by covering with an insulating film instead of the method of forming the insulating layer 105 by applying an insulating resin. There is also. FIGS. 3A and 3B show a manufacturing method when an insulating film is applied.

図3(a)に示すように、突起101が形成された第1基材103を用意し、この突起形成面上に絶縁性フィルムを被せ、このフィルムを上方から押し付けて第1基材103及び突起101にフィルムを密着させる。次いで図3(b)に示すように、研磨ロール等を用いてフィルムの表面を物理的に研磨し、突起101上に配置されているフィルムを削り取ることで突起101を露出させる。そして突起101が露出された絶縁層105上に第2基材107を配置して押圧することで、第1基材103と第2基材107間の電気的な導通を得る。
特開2003−129259号公報 特開2002−359471号公報
As shown in FIG. 3 (a), a first base material 103 on which a protrusion 101 is formed is prepared, an insulating film is placed on the protrusion formation surface, and the film is pressed from above to form the first base material 103 and A film is brought into close contact with the protrusion 101. Next, as shown in FIG. 3B, the surface of the film is physically polished by using a polishing roll or the like, and the film disposed on the protrusion 101 is scraped to expose the protrusion 101. Then, by placing and pressing the second base material 107 on the insulating layer 105 where the protrusion 101 is exposed, electrical conduction between the first base material 103 and the second base material 107 is obtained.
JP 2003-129259 A JP 2002-359471 A

ところで、上述した物理研磨方法では、フレキシブル基板等のように曲がり易い薄い基板上に形成された絶縁層を面内均一に研磨することが難しい。このように曲がり易い基板を物理研磨すると研磨領域毎に層厚が異なり、ひいては研磨後の突起高も異なるため、結果として基材間導通が安定しない場合があるという問題がある。   By the way, in the physical polishing method described above, it is difficult to uniformly polish an insulating layer formed on a thin substrate that is easily bent such as a flexible substrate. When such a substrate that is easily bent is physically polished, the layer thickness is different for each polishing region, and the projection height after polishing is also different. As a result, there is a problem that conduction between substrates may not be stable.

そこで、より安定した基材間導通を確保するために、各突起それぞれが均一な高さを有するように基材を形成する必要がある。そのためには絶縁層を研磨する研磨工程において高度な研磨技術が必要とされる。   Therefore, in order to ensure more stable conduction between the substrates, it is necessary to form the substrate so that each protrusion has a uniform height. For this purpose, an advanced polishing technique is required in the polishing process for polishing the insulating layer.

また、上述したように絶縁層を物理的に研磨すると研磨屑が発生し、この研磨屑が後の微細配線工程で配線短絡を起こす原因となることや、層の表面を傷つける恐れもあることから、不良品増加の原因となるという問題がある。   In addition, as described above, when the insulating layer is physically polished, polishing scraps are generated, which may cause a wiring short circuit in the subsequent fine wiring process and may damage the surface of the layer. There is a problem of increasing the number of defective products.

本発明は、上記課題を鑑みてなされたもので、その目的は、製品不良率を低減させることができる積層タイプの多層及び両面基板の製造方法を提供することにある。   This invention is made | formed in view of the said subject, The objective is to provide the manufacturing method of the multilayer type multilayer and double-sided board which can reduce a product defect rate.

上記課題を解決するために請求項1記載の本発明は、平坦面を有する第1基材面上に少なくとも1個以上の突起を形成する工程と、突起が形成された第1基材面上に絶縁性のフィルムを配置する工程と、このフィルム上に弾性体を配置して、この弾性体が有する弾性力によりフィルムを一定圧力で押圧する工程と、一定圧力の加圧により延伸されたこの突起上のフィルムをドライエッチング法により除去する工程と、一定膜厚の除去により露出したこの突起上に平坦面を有する第2基材を配置してこの突起と接合する工程とを有することを要旨とする。   In order to solve the above-mentioned problem, the present invention according to claim 1 includes a step of forming at least one protrusion on a first base material surface having a flat surface, and the first base material surface on which the protrusion is formed. A step of disposing an insulating film, a step of disposing an elastic body on the film, pressing the film at a constant pressure by the elastic force of the elastic body, And a step of removing a film on the protrusion by a dry etching method and a step of disposing a second base material having a flat surface on the protrusion exposed by removing a certain film thickness and joining the protrusion to the protrusion. And

請求項2の本発明は、請求項1記載の多層及び両面基板の製造方法において、弾性体は、突起の組成物よりも柔らかい材質からなることを要旨とする。   The gist of the present invention of claim 2 is that the elastic body is made of a material softer than the composition of the protrusions in the method for manufacturing a multilayer board and a double-sided board of claim 1.

請求項3の本発明は、請求項1記載の多層及び両面基板の製造方法において、押圧する工程において加熱温度は、絶縁層が軟化する温度以上であって、弾性体が有する弾性特性を維持する温度以下であることを要旨とする。   According to a third aspect of the present invention, in the method for manufacturing a multilayer board and a double-sided board according to the first aspect, in the pressing step, the heating temperature is equal to or higher than the temperature at which the insulating layer softens, and the elastic characteristics of the elastic body are maintained. The gist is that the temperature is lower than the temperature.

本発明によれば、平坦面を有する第1基材の表面上に少なくとも1個以上の突起を形成し、この突起が形成された第1基材の表面上に絶縁性のフィルムを配置して、更に突起の組成物よりも柔らかい材質からなる弾性体を配置して、その後、加熱しながら弾性体7を押圧することで、突起の形状は維持したままフィルムのみを延伸させて第1基材3の表面及び突起表面に密着させ、且つ突起上のフィルム厚を薄くすることができる。そして、突起上のフィルム厚さ分だけをプラズマエッチング法等のドライエッチング法を用いて除去することで、面内均一にフィルムを除去することができ、更に高精度形成された突起を絶縁層上に均一な高さで露出させることができる。その結果、第2基材と接合するときに、一定圧力を加えるだけで2枚の基材間を接合できると共に、安定した導通を得ることができる。その結果、製品の不良率を低減させることができる。   According to the present invention, at least one protrusion is formed on the surface of the first substrate having a flat surface, and an insulating film is disposed on the surface of the first substrate on which the protrusion is formed. Further, an elastic body made of a material softer than the composition of the protrusions is disposed, and then the elastic body 7 is pressed while heating, so that only the film is stretched while maintaining the shape of the protrusions. 3 and the surface of the protrusion, and the film thickness on the protrusion can be reduced. Then, by removing only the film thickness on the protrusion using a dry etching method such as a plasma etching method, the film can be uniformly removed in the surface, and the protrusion formed on the insulating layer can be further accurately formed. Can be exposed at a uniform height. As a result, when joining to the second substrate, the two substrates can be joined only by applying a constant pressure, and stable conduction can be obtained. As a result, the defective rate of the product can be reduced.

また、プラズマエッチング法を用いることにより金属粒子等の研磨屑が発生しないので、配線の短絡や層表面を傷つけることによる製品不良率を抑制することができる。   Moreover, since polishing scraps such as metal particles are not generated by using the plasma etching method, it is possible to suppress a product defect rate due to short-circuiting of the wiring or damage to the layer surface.

以下、図面を参照して、本発明の実施の形態を説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図1は、本発明の実施の形態に係る積層タイプの多層及び両面基板の製造方法を説明する工程図である。   FIG. 1 is a process diagram for explaining a method of manufacturing a multilayer type multilayer and double-sided substrate according to an embodiment of the present invention.

本発明の製造方法は、平坦面を有する第1基材3の表面上に少なくとも1個以上の突起1を形成する工程と、突起1が形成された第1基材3の表面上に絶縁性のフィルム(絶縁層5)を被せ、このフィルム上に更に弾性体7を配置して、この弾性体7に一定圧力を加えることでフィルムを延伸させる工程と、延伸されたフィルムの表面をプラズマエッチング法により一定膜厚だけ除去する工程と、一定膜厚の除去により露出した突起上に第2基材11を配置して第1基材3と第2基材11を押圧により接合する工程とを有している。   The manufacturing method of the present invention includes a step of forming at least one protrusion 1 on the surface of the first base 3 having a flat surface, and an insulating property on the surface of the first base 3 on which the protrusion 1 is formed. The film (insulating layer 5) is covered, an elastic body 7 is further disposed on the film, and the film is stretched by applying a certain pressure to the elastic body 7, and the surface of the stretched film is plasma etched. A step of removing a certain thickness by a method, and a step of placing the second base material 11 on the protrusion exposed by the removal of the constant thickness and joining the first base material 3 and the second base material 11 by pressing. Have.

本発明のひとつの特徴は、突起1上に配置された絶縁層5を弾性体7を用いて押圧した後に、プラズマエッチング法を適用して突起1上の絶縁層5の膜厚分だけ面内均一にドライエッチングする点にある。これにより絶縁層5を原子レベルの高精度エッチングにより均一厚で除去することができる。またこれにより高精度形成された突起1(エッチング法又はメッキ法等を適用して形成されたもの)の先端を絶縁層5から均一な高さで突出させることができる。   One feature of the present invention is that the insulating layer 5 disposed on the protrusion 1 is pressed using the elastic body 7 and then in-plane by the thickness of the insulating layer 5 on the protrusion 1 by applying a plasma etching method. The point is that dry etching is performed uniformly. Thereby, the insulating layer 5 can be removed with a uniform thickness by high-precision etching at the atomic level. In addition, the tip of the projection 1 (formed by applying an etching method, a plating method, or the like) formed with high accuracy can be protruded from the insulating layer 5 at a uniform height.

本発明のもうひとつの特徴は、絶縁層5を均一圧で押圧するために、所定の弾性力を備える弾性体7を用いる点にある。これにより高精度形成された突起1を傷めることなく突起1上の絶縁性フィルムの厚さを薄くすることができる。   Another feature of the present invention is that an elastic body 7 having a predetermined elastic force is used to press the insulating layer 5 with a uniform pressure. Thereby, the thickness of the insulating film on the protrusion 1 can be reduced without damaging the protrusion 1 formed with high accuracy.

また本発明の特徴は、弾性体7を押圧するときはTg温度以上で押圧するものとする。Tg温度とは、ガラス転移温度のことであり、物性の弾性率が急激に落ちる温度である。このTg以上になると弾性体7の弾性力が柔らかくなるので、Tg温度以下で押圧工程を行う。   The feature of the present invention is that when the elastic body 7 is pressed, it is pressed at a temperature equal to or higher than the Tg temperature. The Tg temperature is a glass transition temperature, and is a temperature at which the elastic modulus of physical properties drops sharply. When the temperature is equal to or higher than Tg, the elastic force of the elastic body 7 is softened, so the pressing step is performed at a temperature lower than the Tg temperature.

更に本発明の特徴は、プラズマエッチング法を用いる点にある。これにより研磨屑を発生させることなく絶縁層5を均一な厚さで除去することができる。またエッチング後の気体を廃棄すれば、よりクリーン度を上げることができるので、配線短絡の発生を抑制することができる。また更にOクリーニングを行えば、更に異物をすべて飛ばすことができるので、より製品不良率を低減させることができる。 Further, the present invention is characterized in that a plasma etching method is used. Thus, the insulating layer 5 can be removed with a uniform thickness without generating polishing scraps. In addition, if the gas after etching is discarded, the cleanliness can be further improved, so that the occurrence of wiring short-circuit can be suppressed. Further, if O 2 cleaning is further performed, all the foreign matters can be removed, so that the product defect rate can be further reduced.

ここで本発明の実施の形態に適用する第1基材3及び第2基材11は、例えば銅箔等の導電性材料からなる薄膜基板である。しかし第1基材3及び第2基材11は導電性材料に限らず、例えば予め基板内層に集積回路が積層形成されている半導体チップ(または多層プリント配線基板)であってもよい。この場合は、集積回路の出力端が基板上に形成される突起1と導通可能に接続されているものとする。   Here, the first base material 3 and the second base material 11 applied to the embodiment of the present invention are thin film substrates made of a conductive material such as copper foil. However, the first base material 3 and the second base material 11 are not limited to conductive materials, and may be, for example, a semiconductor chip (or a multilayer printed wiring board) in which integrated circuits are stacked in advance on the substrate inner layer. In this case, the output end of the integrated circuit is connected to the protrusion 1 formed on the substrate so as to be conductive.

突起1は、導電性材料であって具体的には銅、銀、金等の金属材料である。何れの金属材料でも突起形成に適用可能であるが、望ましくは銅がよい。銅を適用することで他の金属に比べてコストを低減させることができる。   The protrusion 1 is a conductive material, specifically, a metal material such as copper, silver, or gold. Any metal material can be used to form the protrusions, but copper is preferable. By applying copper, the cost can be reduced compared to other metals.

ここで弾性体7は、突起の組成物よりも柔らかい材質からなるものとする。その材質とは例えばクッション材であり、その弾性力はフィルムを押圧しても突起の形状を変形させることなく、フィルムを第1基材3の表面及び突起表面に密着させることができる程度の弾性力を有するものとする。具体的には、ペットフィルム、液晶ポリマー(全芳香ポリエステル)又はゴム等が好ましい。   Here, the elastic body 7 is made of a material softer than the composition of the protrusions. The material is, for example, a cushioning material, and its elastic force is such that the film can be brought into close contact with the surface of the first substrate 3 and the surface of the protrusion without deforming the shape of the protrusion even when the film is pressed. It shall have power. Specifically, a pet film, a liquid crystal polymer (fully aromatic polyester), rubber or the like is preferable.

絶縁層5の材質は、弾性体7で押圧されたときに弾性体7の弾性力により延伸され易いものが好ましい。例えば、加熱により軟化する熱可塑性樹脂、ポリイミド、又はテフロン(登録商標)等が挙げられる。尚、好ましくは、押圧したときに弾性体7に接着しない性質を有するものよい。つまり絶縁層5か弾性体7にコロナ処理を施し、押圧力が若干高くなっても絶縁層5と弾性体7と接着しないものがよい。これら絶縁性の材料はフィルム状又はシート状に加工して使用する。   The material of the insulating layer 5 is preferably a material that is easily stretched by the elastic force of the elastic body 7 when pressed by the elastic body 7. For example, a thermoplastic resin that is softened by heating, polyimide, Teflon (registered trademark), or the like can be given. In addition, it is preferable to have a property of not adhering to the elastic body 7 when pressed. That is, it is preferable that the insulating layer 5 or the elastic body 7 is subjected to corona treatment so that the insulating layer 5 and the elastic body 7 do not adhere even if the pressing force is slightly increased. These insulating materials are processed into a film or sheet before use.

次に、図1を参照して、本発明の実施の形態に係る積層タイプの多層及び両面基板の製造方法を具体的に説明する。   Next, with reference to FIG. 1, the manufacturing method of the multilayer type multilayered and double-sided substrate which concerns on embodiment of this invention is demonstrated concretely.

まず図1(a)に示すように、少なくとも1個以上の突起1が形成された第1基材3を用意する。この突起1の形成方法は、例えば銅箔からなる第1基材3の表面上に銅等の導電性材料をスパッタリング法又はCVD法で積層し、この層の上に更にエッチングレジスト層(図示せず)を形成し、このエッチングレジスト層の上面の図示しない所要位置に突起形成用パターンを配置して、その上から紫外線を露光し現像することにより突起形成用パターン以外のエッチングレジスト層を除去して、その後エッチング液を用いてエッチングレジスト層に保護された突起形成用パターンを残し、それ以外の銅を除去した後に、最後に突起形成用パターン上のエッチングレジスト層を剥離することで形成することができる。   First, as shown to Fig.1 (a), the 1st base material 3 in which the at least 1 or more protrusion 1 was formed is prepared. The protrusion 1 is formed by laminating a conductive material such as copper on the surface of the first base material 3 made of, for example, copper foil by sputtering or CVD, and further etching resist layer (not shown) on this layer. The projection resist pattern is disposed at a required position (not shown) on the upper surface of the etching resist layer, and the etching resist layer other than the projection formation pattern is removed by exposing and developing the ultraviolet ray from above. Then, leave the pattern for forming protrusions protected on the etching resist layer using an etching solution, remove the other copper, and finally remove the etching resist layer on the pattern for protrusion formation. Can do.

そしてこのように作製した第1基材3を、押圧用板9aの上面に配置する。次いでこの第1基材3の上面に絶縁性のフィルムを被せる。そして更にその上に弾性体7を配置して、この弾性体7の上方に押圧用板(上板)9bを配置する。   And the 1st base material 3 produced in this way is arrange | positioned on the upper surface of the board 9a for a press. Next, an insulating film is placed on the upper surface of the first base material 3. Further, an elastic body 7 is disposed thereon, and a pressing plate (upper plate) 9b is disposed above the elastic body 7.

続いて図1(b)に示すように、押圧用板9a,9bによりサンドされた第1基材3、絶縁層5及び第2基材11を高温雰囲気中に配置して、この状態で押圧用板9a,9bに圧力を加えることにより、絶縁層5を突起1の表面及び第1基材3の表面に密着させると共に、突起1上の絶縁層5を薄く引き伸ばす(若しくは、押し伸ばす)。このときの加熱温度は、フィルムが十分に軟化する温度以上であって、弾性体7の弾性特性を維持することができる程度の温度以下とする。ここで具体的には、絶縁層5にポリイミドを用い、弾性体7にペットフィルムを用いた場合には、その加熱温度は60〜100℃程度が好ましく、圧力は30〜50kg/cm程度が適当である。このようにして引き伸ばされた後の突起1上の絶縁層5の膜厚は1〜5μm程度となる。 Subsequently, as shown in FIG. 1 (b), the first base material 3, the insulating layer 5 and the second base material 11 sandwiched by the pressing plates 9a and 9b are arranged in a high temperature atmosphere and pressed in this state. By applying pressure to the plates 9a and 9b, the insulating layer 5 is brought into close contact with the surface of the protrusion 1 and the surface of the first substrate 3, and the insulating layer 5 on the protrusion 1 is thinly stretched (or stretched). The heating temperature at this time is equal to or higher than a temperature at which the film is sufficiently softened and is equal to or lower than a temperature at which the elastic characteristics of the elastic body 7 can be maintained. Specifically, when polyimide is used for the insulating layer 5 and a pet film is used for the elastic body 7, the heating temperature is preferably about 60 to 100 ° C., and the pressure is about 30 to 50 kg / cm 2. Is appropriate. The film thickness of the insulating layer 5 on the protrusion 1 after being stretched in this way is about 1 to 5 μm.

次いで図1(c)に示すように、上記基板をプラズマデスミア装置に設定して等方性エッチングを行うことにより絶縁層5の面内を均一厚で除去する。即ち、プラズマを発生させる円筒型の反応室の中に積層形成した基材を設定し、酸素+CF4のプラズマにより、絶縁層5の面内を等方性エッチングすることにより均一厚(1〜5μm)でエッチングする。   Next, as shown in FIG. 1C, the surface of the insulating layer 5 is removed with a uniform thickness by performing isotropic etching with the substrate set in a plasma desmear apparatus. That is, by setting a base material laminated in a cylindrical reaction chamber for generating plasma, isotropic etching is performed on the surface of the insulating layer 5 by plasma of oxygen + CF 4 to obtain a uniform thickness (1 to 5 μm). Etch with.

そして図1(d)に示すように、絶縁層5を均一な厚さでエッチングすることにより絶縁層5の表面から各突起1を同じ長さで突出させる。突出長は、エッチング時間により変化するが、最低限、先端が突出すれば第2基材11との接合が実現できる。   And as shown in FIG.1 (d), each processus | protrusion 1 is made to protrude by the same length from the surface of the insulating layer 5 by etching the insulating layer 5 with uniform thickness. Although the protrusion length varies depending on the etching time, at least, if the tip protrudes, the bonding with the second base material 11 can be realized.

そして最後に図1(e)に示すように、突起1が突出した上面に例えば銅箔等からなる第2基材11を被せ、この第2基材11を押圧することで第1基材3と第2基材11を接合させて突起1を介して電気的導通を得る。即ち、第2基材11を押圧することで、絶縁層5から突出していた突起101の先端部が潰されるので第2基材11との間で導通が得られる。   And finally, as shown in FIG.1 (e), the 2nd base material 11 which consists of copper foil etc. is covered on the upper surface which the protrusion 1 protruded, and the 1st base material 3 is pressed by pressing this 2nd base material 11. And the 2nd base material 11 is joined and electrical continuity is obtained through the protrusion 1. That is, by pressing the second base material 11, the tip of the protrusion 101 that protrudes from the insulating layer 5 is crushed, so that electrical continuity with the second base material 11 is obtained.

以上の工程により、物理的研磨を行わずに、均一な高さを有する突起を備えた(積層タイプの)多層及び両面基板を作製することができる。   Through the above steps, a multilayer (double-layer type) and a double-sided substrate having protrusions having a uniform height can be manufactured without performing physical polishing.

本発明の実施の形態に係る積層タイプの多層及び両面基板の製造方法を説明する工程図である。It is process drawing explaining the manufacturing method of the multilayer type multilayer and double-sided substrate which concern on embodiment of this invention. 従来の突起を用いた積層タイプの多層及び両面基板の製造方法を説明する工程図である。It is process drawing explaining the manufacturing method of the multilayer type multilayer and the double-sided board | substrate using the conventional protrusion. 従来の積層タイプの多層及び両面基板の製造方法において必須工程であるフィルム研磨工程を示した工程図である。It is process drawing which showed the film grinding | polishing process which is an essential process in the manufacturing method of the conventional multilayer type multilayer and double-sided board | substrate.

符号の説明Explanation of symbols

1…突起
3…第1基材
5…絶縁層
7…弾性体
9a,9b…押圧用板
11…第2基材
101…突起
103…第1基材
105…絶縁層
107…第2基材
DESCRIPTION OF SYMBOLS 1 ... Protrusion 3 ... 1st base material 5 ... Insulating layer 7 ... Elastic body 9a, 9b ... Pressing plate 11 ... 2nd base material 101 ... Protrusion 103 ... 1st base material 105 ... Insulating layer 107 ... 2nd base material

Claims (3)

平坦面を有する第1基材面上に少なくとも1個以上の突起を形成する工程と、
前記突起が形成された第1基材面上に絶縁性のフィルムを配置する工程と、
該フィルム上に弾性体を配置して、該弾性体が有する弾性力によりフィルムを一定圧力で押圧する工程と、
前記一定圧力の加圧により延伸された該突起上のフィルムをドライエッチング法により除去する工程と、
前記一定膜厚の除去により露出した該突起上に平坦面を有する第2基材を配置して該突起と接合する工程と
を有することを特徴とする多層及び両面基板の製造方法。
Forming at least one protrusion on the first substrate surface having a flat surface;
Disposing an insulating film on the first substrate surface on which the protrusions are formed;
Disposing an elastic body on the film and pressing the film at a constant pressure by the elastic force of the elastic body;
Removing the film on the protrusion stretched by the constant pressure by a dry etching method;
A method of manufacturing a multilayer substrate and a double-sided substrate, comprising: placing a second base material having a flat surface on the protrusion exposed by the removal of the predetermined film thickness and bonding the protrusion to the protrusion.
前記弾性体は、前記突起の組成物よりも柔らかい材質からなることを特徴とする請求項1記載の多層及び両面基板の製造方法。   The method for manufacturing a multilayer board and a double-sided board according to claim 1, wherein the elastic body is made of a material softer than the composition of the protrusions. 前記押圧する工程において、加熱温度は、前記絶縁層が軟化する温度以上であって、前記弾性体が有する弾性特性を維持する温度以下であることを特徴とする請求項1に記載の多層及び両面基板の製造方法。   The multilayer and both surfaces according to claim 1, wherein, in the pressing step, the heating temperature is equal to or higher than a temperature at which the insulating layer is softened and is equal to or lower than a temperature at which the elastic body has elastic characteristics. A method for manufacturing a substrate.
JP2004038872A 2004-02-16 2004-02-16 Method for manufacturing multi-layer and double-sided substrate Pending JP2005229065A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007116026A (en) * 2005-10-24 2007-05-10 Nippon Mektron Ltd Multilayer flexible circuit board and its manufacturing method
JP2007123797A (en) * 2005-09-28 2007-05-17 Tdk Corp Substrate with built-in semiconductor ic and its manufacturing method
CN101820721B (en) * 2009-02-27 2012-07-18 台湾薄膜电晶体液晶显示器产业协会 Circuit board, base material for same and manufacture method of same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123797A (en) * 2005-09-28 2007-05-17 Tdk Corp Substrate with built-in semiconductor ic and its manufacturing method
JP4535002B2 (en) * 2005-09-28 2010-09-01 Tdk株式会社 Semiconductor IC-embedded substrate and manufacturing method thereof
US8026614B2 (en) 2005-09-28 2011-09-27 Tdk Corporation Semiconductor IC-embedded substrate and method for manufacturing same
JP2007116026A (en) * 2005-10-24 2007-05-10 Nippon Mektron Ltd Multilayer flexible circuit board and its manufacturing method
CN101820721B (en) * 2009-02-27 2012-07-18 台湾薄膜电晶体液晶显示器产业协会 Circuit board, base material for same and manufacture method of same

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