JP2005223860A5

JP2005223860A5 -

Info

Publication number: JP2005223860A5
Application number: JP2004032548A
Authority: JP
Filing date: 2004-02-09
Publication date: 2006-10-19
Anticipated expiration: 2024-02-09

Claims

It has a pixel portion in which pixels including a photosensor for photoelectric conversion and an in-pixel amplifier transistor that amplifies a pixel signal generated by photoelectric conversion are arranged, and a vertical signal line is connected to each pixel column of the pixel portion, A solid-state imaging device that outputs a pixel signal from a signal line via a pixel signal readout circuit,
A plurality of out-of-pixel amplifier transistors each connected between the voltage supply line and each vertical signal line and having a size larger than the in-pixel amplifier transistors;
A bias circuit for driving a plurality of out-of-pixel amplifier transistors;
When the bias circuit drives a plurality of out-of-pixel amplifier transistors, a signal appearing on each vertical signal line is input to the pixel signal readout circuit, and a vertical stripe for each pixel column is output by a signal output from the pixel signal readout circuit. A vertical stripe correction circuit that generates and holds correction data and corrects vertical stripes by subtracting vertical stripe correction data for each pixel column from an effective pixel signal output from a pixel signal readout circuit when reading out the pixel unit; A solid-state imaging device.

A light-shielding pixel portion having the same circuit configuration as the effective pixel but having at least one row of light-shielding pixels that are shielded from light is provided in the pixel portion,
The bias circuit monitors the output voltage of the in-pixel amplifier transistor and the out-of-pixel amplifier transistor in the light-shielding pixel portion, and adjusts the control input voltage of the out-of-pixel amplifier transistor so that the operating points of the two amplifier transistors coincide with each other. The solid-state imaging device according to claim 1.

The solid-state imaging device according to claim 1, further comprising a switch capable of electrically shorting the plurality of vertical signal lines.

2. The bias circuit is configured to change an operating point of an out-of-pixel amplifier transistor by changing an input voltage of a transistor that monitors the in-pixel amplifier transistor according to an input control signal. The solid-state imaging device described in 1.

A light-shielded pixel portion having at least one row of light-shielded pixels that have the same circuit configuration as the effective pixels but are shielded from light;
A circuit for obtaining a signal level difference between a light-shielded pixel signal read from the light-shielded pixel unit without driving the out-of-pixel amplifier transistor and a dummy pixel signal appearing on each vertical signal line when the out-of-pixel amplifier transistor is driven; Further comprising
The solid-state imaging device according to claim 4, wherein the bias circuit controls an input voltage supplied to a transistor that monitors the intra-pixel amplifier transistor according to a signal level difference obtained by the circuit.

In the block of the circuit for obtaining the signal level difference,
An averaging circuit for averaging the input signals;
A first holding circuit that holds light-shielded pixel correction data after averaging the light-shielded pixel signals read from the light-shielded pixel unit a plurality of times without driving the out-of-pixel amplifier transistor;
A second holding circuit for holding dummy pixel correction data after averaging the dummy pixel signals appearing on each vertical signal line when the out-of-pixel amplifier transistor is driven a plurality of times;
A circuit for obtaining a voltage when the light-shielding pixel correction data and the dummy pixel correction data held in the first and second holding circuits match,
The solid-state imaging device according to claim 5, wherein the voltage obtained by the circuit is input to a transistor that monitors the intra-pixel amplifier transistor.

The bias circuit monitors the output voltage of the in-pixel amplifier transistor of the light-shielded pixel portion and the out-of-pixel amplifier transistor when driving the out-of-pixel amplifier transistor, and the out-of-pixel direction is such that the operating points of the two amplifier transistors coincide with each other. The solid-state imaging device according to claim 5, wherein a voltage of a control input of the amplifier transistor is adjusted.

It has a pixel portion in which pixels including a photosensor for photoelectric conversion and an in-pixel amplifier transistor that amplifies a pixel signal generated by photoelectric conversion are arranged, and a vertical signal line is connected to each pixel column of the pixel portion, An image input device including a solid-state imaging device that outputs a pixel signal from a signal line via a pixel signal readout circuit,
A plurality of out-of-pixel amplifier transistors each connected between the voltage supply line and each vertical signal line and having a size larger than the in-pixel amplifier transistors;
A bias circuit for driving a plurality of out-of-pixel amplifier transistors;
When the bias circuit drives a plurality of out-of-pixel amplifier transistors, a signal appearing on each vertical signal line is input to the pixel signal readout circuit, and a vertical stripe for each pixel column is output by a signal output from the pixel signal readout circuit. A vertical stripe correction circuit that generates and holds correction data and corrects vertical stripes by subtracting vertical stripe correction data for each pixel column from an effective pixel signal output from a pixel signal readout circuit when reading out the pixel unit; Have
An image input device in which at least a pixel portion, a pixel signal readout circuit, an out-pixel amplifier transistor, and a bias circuit are formed inside an image pickup device.

A method for driving a solid-state imaging device including a pixel unit in which pixels including a photosensor for photoelectric conversion and an in-pixel amplifier transistor that amplifies a pixel signal generated by photoelectric conversion are arranged,
An out-pixel amplifier transistor having a size larger than that of the in-pixel amplifier transistor is provided for each signal line of the pixel signal of the pixel unit, and a vertical stripe is generated from a signal appearing for each signal line when the out-of-pixel amplifier transistor is driven. Generating and holding correction data; and
Subtracting the vertical streak correction data for each signal line from the effective pixel signal discharged to the signal line at the time of reading the pixel unit, and performing vertical streak correction;
A method for driving a solid-state imaging device including:

When driving the out-of-pixel amplifier transistor, the output voltage of the in-pixel amplifier transistor and the out-of-pixel amplifier transistor of a pixel that is shielded from light is monitored, and the operating point of the two amplifier transistors is matched. Adjust the control input of the external amplifier transistor
The method for driving a solid-state imaging device according to claim 9 .

Outputting a light-shielded pixel signal from the light-shielded pixel to the signal line without driving the out-of-pixel amplifier transistor;
Obtaining a signal level difference between the signal appearing on the signal line when the out-of-pixel amplifier transistor is driven and the light-shielded pixel signal ;
Further including
The input voltage supplied to the transistor that monitors the out-of-pixel amplifier transistor is controlled according to the signal level difference.
The method for driving a solid-state imaging device according to claim 10 .