JP2005217410A - 半導体ウェハを製造する方法 - Google Patents
半導体ウェハを製造する方法 Download PDFInfo
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- JP2005217410A JP2005217410A JP2005019832A JP2005019832A JP2005217410A JP 2005217410 A JP2005217410 A JP 2005217410A JP 2005019832 A JP2005019832 A JP 2005019832A JP 2005019832 A JP2005019832 A JP 2005019832A JP 2005217410 A JP2005217410 A JP 2005217410A
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- Prior art keywords
- polishing
- semiconductor wafer
- thickness
- flatness
- polishing process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 59
- 238000007517 polishing process Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 235000012431 wafers Nutrition 0.000 description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000669 Chrome steel Inorganic materials 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】半導体ウェハの表面および裏面を、回転するポリッシング定盤の間で同時にポリッシングすることによって半導体ウェハを製造する方法であって、半導体ウェハを回転円板の切欠内に配置し、所定のジオメトリの軌道上に保持し、回転円板が所定の回転円板厚さを有しており、半導体ウェハがポリッシング前に受け入れ時厚さを有しており、ポリッシング後に最終厚さを有している形式の方法において、ポリッシング工程のポリッシング時間をデータから算出し、これらのデータは、半導体ウェハの受け入れ時厚さ、回転円板厚さ、このポリッシング工程に先行する最後のポリッシング工程の際にポリッシングされた半導体ウェハの受け入れ時厚さ、最終厚さ、平坦度である。
【選択図】図1
Description
ポリッシング時間を自動的に設定するマスタコンピュータは、ポリッシング時間を算出するために以下のデータA〜Gを使用する。A〜Gとは以下の通りである。
B 先行して行われるポリッシング工程の終了時の半導体ウェハの厚さ
C 先行して行われるポリッシング工程のポリッシング時間
D 先行して行われるポリッシング工程の開始時のキャリヤの厚さ
E 先行して行われるポリッシング工程中にポリッシングされた半導体ウェハで測定されたdnl35値
F 現行のポリッシング工程の開始時の半導体ウェハの厚さ
G 現行のポリッシング工程の開始時のキャリヤの厚さ
ポリッシング時間の計算に入れられる平坦性の考察に関して、マスタコンピュータは修正ファクタKを使用する。このファクタKは、測定されたdnl35値(E)に基づき、次のような値である。
dnl35値が0.5〜0.7ならば、K=+0.5μm
dnl35値が、0.15〜0.5ならば、K=0(最適範囲)
dnl35値が0.05〜0.15ならば、K=−0.5μm
dnl35値が<0.05ならば、K=−1μm
現行のポリッシング工程のポリッシング時間の算出は以下の式で行われる。この場合、アルファベットは上述した通りのものである。
これにより、キャリヤの厚さと半導体ウェハの初期厚さの不変性を仮定すると特に以下のような結果となる。
この場合、厚さとこれに続く符号により、図示の点により表される一個所における半導体ウェハの厚さが規定される。
Claims (2)
- 所定のポリッシング時間をかけて行うポリッシング工程中に、半導体ウェハの表面および裏面をポリッシングゾルを供給しながら、回転するポリッシング定盤の間で同時にポリッシングすることによって半導体ウェハを製造する方法であって、半導体ウェハを回転円板の切欠内に配置し、所定のジオメトリの軌道上に保持し、回転円板が所定の回転円板厚さを有しており、半導体ウェハがポリッシング前に受け入れ時厚さを有しており、ポリッシング後に最終厚さを有している形式の方法において、
ポリッシング工程のポリッシング時間をデータから算出し、これらのデータは、半導体ウェハの受け入れ時厚さ、回転円板厚さ、このポリッシング工程に先行する最後のポリッシング工程の際にポリッシングされた半導体ウェハの受け入れ時厚さ、最終厚さ、平坦度であることを特徴とする、半導体ウェハを製造する方法。 - 平坦度をdnl35値として計算に入れる、請求項1記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004004556A DE102004004556B4 (de) | 2004-01-29 | 2004-01-29 | Verfahren zur Herstellung einer Halbleiterscheibe |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005217410A true JP2005217410A (ja) | 2005-08-11 |
JP4277007B2 JP4277007B2 (ja) | 2009-06-10 |
Family
ID=34801214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005019832A Active JP4277007B2 (ja) | 2004-01-29 | 2005-01-27 | 半導体ウェハを製造する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6997776B2 (ja) |
JP (1) | JP4277007B2 (ja) |
KR (1) | KR100640144B1 (ja) |
CN (1) | CN100468645C (ja) |
DE (1) | DE102004004556B4 (ja) |
TW (1) | TWI253689B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113246012A (zh) * | 2021-05-14 | 2021-08-13 | 上海华力集成电路制造有限公司 | 化学机械研磨的控制方法、设备和存储介质 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004005702A1 (de) * | 2004-02-05 | 2005-09-01 | Siltronic Ag | Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe |
DE102009030296B4 (de) | 2009-06-24 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Siliciumscheibe |
JP6451825B1 (ja) | 2017-12-25 | 2019-01-16 | 株式会社Sumco | ウェーハの両面研磨方法 |
CN113664694A (zh) * | 2021-07-29 | 2021-11-19 | 山西烁科晶体有限公司 | 碳化硅双面抛光中硅面及碳面去除厚度的测定方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05177539A (ja) * | 1991-12-24 | 1993-07-20 | Sumitomo Electric Ind Ltd | 両面ポリッシュ装置によるウェハ研磨方法 |
JPH07100297B2 (ja) * | 1987-01-27 | 1995-11-01 | 九州電子金属株式会社 | 半導体ウエハの研磨制御装置 |
JPH10106984A (ja) * | 1996-09-27 | 1998-04-24 | Ebara Corp | 半導体ウエハー研磨装置における研磨方法及び研磨制御装置 |
JPH11267970A (ja) * | 1998-03-24 | 1999-10-05 | Okamoto Machine Tool Works Ltd | ウエハの座標合せ装置 |
JP2001160544A (ja) * | 1999-10-12 | 2001-06-12 | Applied Materials Inc | 研磨機制御方法 |
JP2002154053A (ja) * | 2000-11-01 | 2002-05-28 | Applied Materials Inc | 研磨装置及び研磨方法 |
JP2002343753A (ja) * | 2001-05-21 | 2002-11-29 | Nikon Corp | シミュレーション方法及び装置、加工装置、加工システム、並びに半導体デバイス製造方法 |
WO2002103777A1 (en) * | 2001-06-19 | 2002-12-27 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
JP2004022839A (ja) * | 2002-06-17 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corp | Soi基板の研磨方法およびその装置 |
JP2005019450A (ja) * | 2003-06-23 | 2005-01-20 | Toshiba Ceramics Co Ltd | 拡散ウェーハの製造方法 |
Family Cites Families (10)
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US3691694A (en) * | 1970-11-02 | 1972-09-19 | Ibm | Wafer polishing machine |
US4390392A (en) * | 1980-09-16 | 1983-06-28 | Texas Instruments Incorporated | Method for removal of minute physical damage to silicon wafers by employing laser annealing |
DE3524978A1 (de) * | 1985-07-12 | 1987-01-22 | Wacker Chemitronic | Verfahren zum beidseitigen abtragenden bearbeiten von scheibenfoermigen werkstuecken, insbesondere halbleiterscheiben |
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KR100227924B1 (ko) * | 1995-07-28 | 1999-11-01 | 가이데 히사오 | 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치 |
JPH09270400A (ja) * | 1996-01-31 | 1997-10-14 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
JP3620554B2 (ja) * | 1996-03-25 | 2005-02-16 | 信越半導体株式会社 | 半導体ウェーハ製造方法 |
JP3658454B2 (ja) * | 1996-03-29 | 2005-06-08 | コマツ電子金属株式会社 | 半導体ウェハの製造方法 |
DE19905737C2 (de) * | 1999-02-11 | 2000-12-14 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit |
DE19956250C1 (de) * | 1999-11-23 | 2001-05-17 | Wacker Siltronic Halbleitermat | Kostengünstiges Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
-
2004
- 2004-01-29 DE DE102004004556A patent/DE102004004556B4/de not_active Expired - Lifetime
-
2005
- 2005-01-24 CN CNB2005100056629A patent/CN100468645C/zh active Active
- 2005-01-26 KR KR1020050007064A patent/KR100640144B1/ko active IP Right Grant
- 2005-01-27 TW TW094102543A patent/TWI253689B/zh active
- 2005-01-27 JP JP2005019832A patent/JP4277007B2/ja active Active
- 2005-01-27 US US11/044,595 patent/US6997776B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07100297B2 (ja) * | 1987-01-27 | 1995-11-01 | 九州電子金属株式会社 | 半導体ウエハの研磨制御装置 |
JPH05177539A (ja) * | 1991-12-24 | 1993-07-20 | Sumitomo Electric Ind Ltd | 両面ポリッシュ装置によるウェハ研磨方法 |
JPH10106984A (ja) * | 1996-09-27 | 1998-04-24 | Ebara Corp | 半導体ウエハー研磨装置における研磨方法及び研磨制御装置 |
JPH11267970A (ja) * | 1998-03-24 | 1999-10-05 | Okamoto Machine Tool Works Ltd | ウエハの座標合せ装置 |
JP2001160544A (ja) * | 1999-10-12 | 2001-06-12 | Applied Materials Inc | 研磨機制御方法 |
JP2002154053A (ja) * | 2000-11-01 | 2002-05-28 | Applied Materials Inc | 研磨装置及び研磨方法 |
JP2002343753A (ja) * | 2001-05-21 | 2002-11-29 | Nikon Corp | シミュレーション方法及び装置、加工装置、加工システム、並びに半導体デバイス製造方法 |
WO2002103777A1 (en) * | 2001-06-19 | 2002-12-27 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
JP2004022839A (ja) * | 2002-06-17 | 2004-01-22 | Sumitomo Mitsubishi Silicon Corp | Soi基板の研磨方法およびその装置 |
JP2005019450A (ja) * | 2003-06-23 | 2005-01-20 | Toshiba Ceramics Co Ltd | 拡散ウェーハの製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113246012A (zh) * | 2021-05-14 | 2021-08-13 | 上海华力集成电路制造有限公司 | 化学机械研磨的控制方法、设备和存储介质 |
CN113246012B (zh) * | 2021-05-14 | 2022-08-09 | 上海华力集成电路制造有限公司 | 化学机械研磨的控制方法、设备和存储介质 |
Also Published As
Publication number | Publication date |
---|---|
JP4277007B2 (ja) | 2009-06-10 |
US6997776B2 (en) | 2006-02-14 |
DE102004004556B4 (de) | 2008-12-24 |
KR100640144B1 (ko) | 2006-10-31 |
TW200525625A (en) | 2005-08-01 |
TWI253689B (en) | 2006-04-21 |
CN100468645C (zh) | 2009-03-11 |
DE102004004556A1 (de) | 2005-08-18 |
KR20050077753A (ko) | 2005-08-03 |
CN1649103A (zh) | 2005-08-03 |
US20050170749A1 (en) | 2005-08-04 |
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