JP2005203642A5 - - Google Patents

Download PDF

Info

Publication number
JP2005203642A5
JP2005203642A5 JP2004009877A JP2004009877A JP2005203642A5 JP 2005203642 A5 JP2005203642 A5 JP 2005203642A5 JP 2004009877 A JP2004009877 A JP 2004009877A JP 2004009877 A JP2004009877 A JP 2004009877A JP 2005203642 A5 JP2005203642 A5 JP 2005203642A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004009877A
Other versions
JP2005203642A (ja
JP4230370B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004009877A priority Critical patent/JP4230370B2/ja
Priority claimed from JP2004009877A external-priority patent/JP4230370B2/ja
Priority to US11/034,920 priority patent/US7087957B2/en
Publication of JP2005203642A publication Critical patent/JP2005203642A/ja
Publication of JP2005203642A5 publication Critical patent/JP2005203642A5/ja
Application granted granted Critical
Publication of JP4230370B2 publication Critical patent/JP4230370B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004009877A 2004-01-16 2004-01-16 半導体装置及びその製造方法 Expired - Fee Related JP4230370B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004009877A JP4230370B2 (ja) 2004-01-16 2004-01-16 半導体装置及びその製造方法
US11/034,920 US7087957B2 (en) 2004-01-16 2005-01-14 Semiconductor device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004009877A JP4230370B2 (ja) 2004-01-16 2004-01-16 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2005203642A JP2005203642A (ja) 2005-07-28
JP2005203642A5 true JP2005203642A5 (ja) 2005-09-08
JP4230370B2 JP4230370B2 (ja) 2009-02-25

Family

ID=34822771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004009877A Expired - Fee Related JP4230370B2 (ja) 2004-01-16 2004-01-16 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US7087957B2 (ja)
JP (1) JP4230370B2 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340549A (ja) * 2004-05-28 2005-12-08 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US8183595B2 (en) * 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
CN101523614B (zh) * 2006-11-20 2011-04-20 松下电器产业株式会社 半导体装置及其驱动方法
KR100849923B1 (ko) 2006-12-06 2008-08-04 한국전자통신연구원 화합물 반도체소자의 제작방법
JP5291309B2 (ja) * 2007-08-13 2013-09-18 株式会社アドバンテスト 高電子移動度トランジスタおよび電子デバイス
KR101522400B1 (ko) * 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자
TWI509774B (zh) 2009-05-19 2015-11-21 Murata Manufacturing Co A semiconductor switching device, and a method of manufacturing a semiconductor switching device
JP2011165749A (ja) * 2010-02-05 2011-08-25 Panasonic Corp 半導体装置
US20110241020A1 (en) * 2010-03-31 2011-10-06 Triquint Semiconductor, Inc. High electron mobility transistor with recessed barrier layer
US9202906B2 (en) * 2013-03-14 2015-12-01 Northrop Grumman Systems Corporation Superlattice crenelated gate field effect transistor
TWI615977B (zh) * 2013-07-30 2018-02-21 高效電源轉換公司 具有匹配臨界電壓之積體電路及其製造方法
US9406673B2 (en) * 2013-12-23 2016-08-02 Infineon Technologies Austria Ag Semiconductor component with transistor
US10224426B2 (en) * 2016-12-02 2019-03-05 Vishay-Siliconix High-electron-mobility transistor devices
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168677A (ja) * 1983-03-14 1984-09-22 Fujitsu Ltd 半導体装置及びその製造方法
JPH02148740A (ja) * 1988-11-29 1990-06-07 Fujitsu Ltd 半導体装置及びその製造方法
JP3044396B2 (ja) 1991-01-10 2000-05-22 富士通株式会社 Ｅ／ｄ型電界効果半導体装置の製造方法

Similar Documents

Publication Publication Date Title
FR18C1016I1 (ja)
BE2015C038I2 (ja)
BR122015024347A2 (ja)
JP2004358653A5 (ja)
DE602004023434D1 (ja)
JP2005203642A5 (ja)
BR122018073034B8 (ja)
JP2005161058A5 (ja)
JP2005208376A5 (ja)
JP2005219217A5 (ja)
JP2005233377A5 (ja)
IN2004DE02342A (ja)
JP2005094812A5 (ja)
AT501137B8 (ja)
JP2006017231A5 (ja)
JP2005260162A5 (ja)
JP2006017687A5 (ja)
AT500847B8 (ja)
CN300779224S (zh) 龙头
CN300736474S (zh) 洗手盆
CN300736468S (zh) 净身盆
CN300736469S (zh) 净身盆
CN300781624S (zh) 电视机
CN300781317S (zh) 叉车
CN300736035S (zh) 蒸汽发生器基座（1）