JP2005197958A - Piezoelectric oscillator - Google Patents

Piezoelectric oscillator Download PDF

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JP2005197958A
JP2005197958A JP2004001355A JP2004001355A JP2005197958A JP 2005197958 A JP2005197958 A JP 2005197958A JP 2004001355 A JP2004001355 A JP 2004001355A JP 2004001355 A JP2004001355 A JP 2004001355A JP 2005197958 A JP2005197958 A JP 2005197958A
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lead
gold
free solder
solder
amount
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JP4661050B2 (en
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Masaharu Sugano
正治 菅野
Hideyuki Sugano
英幸 菅野
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Toyo Communication Equipment Co Ltd
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Toyo Communication Equipment Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To effectively prevent a joining defect of a surface-mounted type piezoelectric oscillator in two-storied structure constituted by integrally joining a mount substrate where an IC component is mounted with a ceramic container bottom part of a piezoelectric vibrator with lead-free solder by suppressing the amount of gold by which gold-plating layers of respective join electrode surface layers on ceramic-container and mount-substrate sides are diffused into the solder below a fixed ratio against the amount of lead-free solder in use. <P>SOLUTION: The piezoelectric oscillator is equipped with a piezoelectric vibrator 10 having a piezoelectric vibrating element 14 airtightly sealed in the ceramic container 12 and the mount substrate 1 where the IC component 3 is mounted, and a join electrode 11 of the piezoelectric vibrator and a join electrode 4 of the mount substrate are joined together in one body with lead-free solder 20 and also have gold-plating layers as their surface layers, the weight ratio of the lead-free solder and gold that the lead-free solder contains is ≤7.5 wt% . <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は表面実装用の圧電発振器のパッケージ構造の改良に関し、特に圧電振動子と、IC部品を搭載した実装基板を二階建て構造に積層して電極同士を鉛フリー半田にて接合した圧電発振器において発生し易い不具合を解消するための技術に関する。   The present invention relates to an improvement in the package structure of a surface-mount piezoelectric oscillator, and in particular, in a piezoelectric oscillator in which a piezoelectric vibrator and a mounting substrate on which an IC component is mounted are stacked in a two-story structure and electrodes are joined with lead-free solder. The present invention relates to a technique for solving problems that are likely to occur.

携帯電話機等の移動体通信機器の普及に伴う低価格化、及び小型化の急速な進展により、これらの通信機器に使用される水晶発振器等の圧電発振器に対しても、低価格化、小型化、及び薄型化の要請が高まっている。
このような要請に対応するために、図4に示した如き表面実装型圧電発振器が提案されている。この圧電発振器100は、底部に表面実装用の外部電極104を備えると共に、上面に凹所102を備えた矩形の実装基板101と、実装基板101の外枠上面に形成した接合電極105と半田115によって接合される接合電極111を下面に備えた圧電振動子110とを2階建て構造で接合一体化するとともに、実装基板101の凹所102内底面の内部電極上にIC部品103を搭載した構成を備えている。IC部品103は、発振回路及び温度補償回路をチップ部品化したものである。
圧電振動子110は、上面に凹所を備えたセラミック容器112の凹所113内に図示しない圧電振動素子114を収容すると共に、該凹所113を金属蓋115にて気密封止した構成を備えている。
ところで、最近では、環境問題への対応等の社会的要請から有害物質である鉛を含んだ従来の共晶半田(錫−鉛半田)に代えて、鉛を含まない鉛フリー半田(錫−銀−銅系、錫−銅系、錫−亜鉛系等)が多用されるに到っている。このため、上記の如き圧電発振器を構成する実装基板101と圧電振動子110の各接合電極105、111間の接合にも鉛フリー半田115が使用されている。
一方、鉛フリー半田を用いて接続される各接合電極105と111は、夫々実装基板101とセラミック容器112上に、例えば、タングステン、銅等のメタライズ下地層、ニッケルメッキ層等の中間層、表面の金メッキ層を順次積層した備えた構成を備えている。金メッキ層の厚みは、0.5〜0.8μm程度である。なお、各接合電極105、111を実装基板101やセラミック容器112に形成する際には、実装基板101底部の外部電極104や、セラミック容器内の内部電極等を同時に同一の手順にて製造するため、各電極は同一の積層構造となる。
半田接合に際しては、例えば実装基板101の接合電極105面に塗布した適量のクリーム半田上に、圧電振動子110の接合電極111が載置されるように圧電振動子と実装基板を位置決めした状態で、リフロー炉内において加熱してから冷却硬化させる手順が実施される。
ところで、表層に金メッキ層を備えた電極間を錫−鉛半田により接合した場合に、金メッキ層が半田中に固溶して消失することによって、半田接合部分にクラックや接合不良が生じる所謂「半田食われ現象」が発生することが知られている(特許第3377850号)。この現象は、金が固溶することによって半田層の一部が金を多く含んだ脆性の低い合金に変質することによって発生すると考えられる。
特許第3377850号においては、このような不具合を解消するために、電極表面の金メッキ層を溶融除去してから半田メッキ層を形成することにより、リフロー時に金が半田中の錫と固溶して食われを起こすことがなく、半田メッキ層と半田とが拡散し合って強固且つ確実に接合されるようにしている。
Due to the price reduction accompanying the widespread use of mobile communication devices such as mobile phones and the rapid progress of miniaturization, the price and size of piezoelectric oscillators such as crystal oscillators used in these communication devices are also reduced. There is an increasing demand for thinning.
In order to meet such a demand, a surface mount piezoelectric oscillator as shown in FIG. 4 has been proposed. The piezoelectric oscillator 100 includes an external electrode 104 for surface mounting on the bottom and a rectangular mounting substrate 101 having a recess 102 on the upper surface, a bonding electrode 105 formed on the upper surface of the outer frame of the mounting substrate 101, and solder 115. The piezoelectric vibrator 110 having the lower surface of the bonding electrode 111 to be bonded by bonding is bonded and integrated with a two-story structure, and the IC component 103 is mounted on the internal electrode on the inner bottom surface of the recess 102 of the mounting substrate 101. It has. The IC component 103 is a chip component of an oscillation circuit and a temperature compensation circuit.
The piezoelectric vibrator 110 has a configuration in which a piezoelectric vibration element 114 (not shown) is accommodated in a recess 113 of a ceramic container 112 having a recess on the upper surface, and the recess 113 is hermetically sealed with a metal lid 115. ing.
Recently, instead of conventional eutectic solder (tin-lead solder) containing lead, which is a harmful substance, due to social demands such as response to environmental problems, lead-free solder (tin-silver) that does not contain lead -Copper-based, tin-copper-based, tin-zinc-based, etc.) are frequently used. For this reason, lead-free solder 115 is also used for bonding between the bonding electrodes 105 and 111 of the mounting substrate 101 and the piezoelectric vibrator 110 constituting the piezoelectric oscillator as described above.
On the other hand, each of the bonding electrodes 105 and 111 connected using lead-free solder is formed on the mounting substrate 101 and the ceramic container 112, for example, a metallized underlayer such as tungsten or copper, an intermediate layer such as a nickel plating layer, a surface, etc. The gold plating layers are sequentially stacked. The thickness of the gold plating layer is about 0.5 to 0.8 μm. When forming each bonding electrode 105, 111 on the mounting substrate 101 or the ceramic container 112, the external electrode 104 at the bottom of the mounting substrate 101, the internal electrode in the ceramic container, etc. are simultaneously manufactured in the same procedure. Each electrode has the same laminated structure.
When soldering, for example, the piezoelectric vibrator and the mounting board are positioned so that the bonding electrode 111 of the piezoelectric vibrator 110 is placed on an appropriate amount of cream solder applied to the surface of the bonding electrode 105 of the mounting board 101. Then, a procedure for heating and cooling in a reflow furnace is performed.
By the way, when electrodes having a gold plating layer on the surface layer are joined with tin-lead solder, the gold plating layer dissolves and disappears in the solder, so that a crack or a joint failure occurs in the solder joint portion. It is known that the “eating phenomenon” occurs (Japanese Patent No. 3377850). This phenomenon is considered to occur when gold dissolves and a part of the solder layer is transformed into a low brittle alloy containing a lot of gold.
In Japanese Patent No. 3377850, in order to solve such a problem, the gold plating layer on the electrode surface is melted and removed, and then the solder plating layer is formed. The solder plating layer and the solder diffuse to each other so that they are firmly and reliably joined without causing erosion.

しかし、この従来例は明らかに工程数が増大し、複雑化するため、生産性の低下、コストアップを招く虞が強い。
なお、このような「半田食われ現象」と類似した現象は、鉛フリー半田においても同様に発生することが確認されている。
即ち、図5(a)(b)及び(c)は図4に示した圧電発振器において接合電極間を鉛フリー半田によって接合する場合に接合不良が発生する状態を示す拡大図、時間−リフロー温度プロファイルを示す図、及び半田中における金濃度と融点との関係を示す図である。
まず、図5(a)(1)では、実装基板101上の接合電極105上に鉛フリーのクリーム半田115を印刷してから、接合電極105上に接合電極111が適切に位置決めされるようにクリーム半田115をサイドイッチ状に挟んだ状態で圧電振動子110を載置する。この状態でリフロー炉内での加熱を開始した場合には、(b)(1)に示すようにクリーム半田の融点に達していない段階では図示の状態が維持される。
次に、図5(a)(2)は溶融状態を示しており、リフロー炉内での加熱によって、(b)(2)のように融点に達した場合に、クリーム半田115が振動子側の接合電極111の全面に展開するが、この際に接合電極105、111の表層を構成する金メッキ層が半田内に拡散を開始し、(c)に示すように半田115側の金濃度増加、相対的な半田量の低下により融点が上昇する。融点の上昇によって金を含んだ半田は完全に溶融できない状態となる。
次いで、図5(a)(3)は温度降下時の状態を示しており、界面に金−錫合金が析出して濡れ性が低下し、更に毛細管現象により半田が丸まろうとするため半田の引き込みが行われる。そして、加熱時に半田全体が完全に溶融されてないため、冷却時にフラックスガスが抜けきらずにボイドが形成される。即ち、半田が融点にまで昇温して完全に溶融する場合には十分な凝集が行われるためフラックスガスが排出された状態となるが、半田が完全に溶融できない場合には半田の凝集が不十分となるためフラックスガスが残留し、そのまま硬化してしまう。また、同様に溶融が不十分であると、半田が丸まろうとするため接合電極面に展開することができない。
However, since this conventional example obviously increases the number of steps and becomes complicated, there is a strong possibility that the productivity is lowered and the cost is increased.
It has been confirmed that a phenomenon similar to the “solder erosion phenomenon” similarly occurs in lead-free solder.
5 (a), 5 (b) and 5 (c) are enlarged views showing a state in which bonding failure occurs when bonding electrodes are bonded with lead-free solder in the piezoelectric oscillator shown in FIG. 4, time-reflow temperature. It is a figure which shows a profile, and is a figure which shows the relationship between the gold | metal density | concentration in solder, and melting | fusing point.
First, in FIGS. 5A and 5A, after the lead-free cream solder 115 is printed on the bonding electrode 105 on the mounting substrate 101, the bonding electrode 111 is appropriately positioned on the bonding electrode 105. The piezoelectric vibrator 110 is placed with the cream solder 115 sandwiched between side switches. When heating in the reflow furnace is started in this state, the state shown in the figure is maintained at the stage where the melting point of the cream solder has not been reached as shown in (b) (1).
Next, FIGS. 5A and 5B show the melted state. When the melting point reaches the melting point as shown in FIGS. 5B and 2B by heating in the reflow furnace, the cream solder 115 is moved to the vibrator side. The gold plating layer constituting the surface layer of the bonding electrodes 105 and 111 starts to diffuse into the solder at this time, and the gold concentration on the solder 115 side increases as shown in FIG. The melting point increases due to the relative decrease in the amount of solder. As the melting point rises, the solder containing gold cannot be completely melted.
Next, FIGS. 5 (a) and 3 (3) show the state when the temperature is lowered. Since the gold-tin alloy is deposited on the interface and the wettability is lowered, and further, the solder tends to be rounded by the capillary phenomenon. Retraction is performed. And since the whole solder is not melt | dissolved completely at the time of a heating, a void is formed without flux gas being able to escape at the time of cooling. That is, when the solder is heated to the melting point and completely melted, sufficient agglomeration is performed and the flux gas is discharged. However, when the solder cannot be completely melted, the solder is not agglomerated. Since it becomes sufficient, the flux gas remains and cures as it is. Similarly, if the melting is insufficient, the solder tends to be rounded and cannot be spread on the bonding electrode surface.

つまり、接合電極105、111間を半田によって接合する場合には接合電極表面に金メッキ層を形成する必要はないが、実装基板101の外部電極104や、セラミック容器112の内部電極等については、フリップチップ実装に適した電極構造とするために金メッキ層を厚手に形成する必要がある。上述のように実際の絶縁基板やセラミック容器の製造工程では、これらの外部電極や内部電極は、夫々各接合電極105、111と同時に形成されるため、各接合電極105、111の表層に金メッキ層が形成されることとなる。この際、接合電極表層の金メッキ層が0.5〜0.8μm程度の厚みを有することとなるが、このように金メッキ層を厚くすると、両接合電極表層の金が夫々半田内に拡散した際における半田量に対する金の重量濃度が一定以上(例えば、11〜12wt%程度)に高くなり、金リッチ状態にある半田部分の融点が上昇して半田が溶融しないまま硬化する結果、半田がボソボソになって剥離が発生し、耐衝撃性、耐落下性が低下し、信頼性が失われることが明らかになった。
なお、一方の接合電極が金メッキ層を備えず、他方の接合電極の表層に0.3μm程度の比較的薄い金メッキ層を有している場合には、鉛フリー半田を用いて接合しても、金の拡散による半田のボソボソ化、ボイド発生という不具合は起きないことが確認されている。
特許第3377850号
That is, when joining the joining electrodes 105 and 111 by soldering, it is not necessary to form a gold plating layer on the surface of the joining electrode, but for the external electrode 104 of the mounting substrate 101, the internal electrode of the ceramic container 112, etc. In order to obtain an electrode structure suitable for chip mounting, it is necessary to form a thick gold plating layer. As described above, in the actual manufacturing process of the insulating substrate and the ceramic container, these external electrodes and internal electrodes are formed at the same time as the respective bonding electrodes 105 and 111. Therefore, the gold plating layer is formed on the surface layer of each bonding electrode 105 and 111. Will be formed. At this time, the gold plating layer on the surface of the bonding electrode has a thickness of about 0.5 to 0.8 μm. When the gold plating layer is increased in this way, the gold on the surface of both bonding electrodes diffuses into the solder. As a result, the weight concentration of gold with respect to the amount of solder becomes higher than a certain level (for example, about 11 to 12 wt%), the melting point of the solder portion in the gold-rich state rises, and the solder is hardened without melting. It became clear that peeling occurred, impact resistance and drop resistance were lowered, and reliability was lost.
In addition, when one bonding electrode does not include a gold plating layer and the surface layer of the other bonding electrode has a relatively thin gold plating layer of about 0.3 μm, even if bonding is performed using lead-free solder, It has been confirmed that there is no problem of solder bumping and void generation due to gold diffusion.
Japanese Patent No. 3377850

本発明者は、表層に比較的厚い金メッキ層を備えた2つの接合電極間を鉛フリー半田によって接合する際に、両接合電極表面の金メッキ層が同時に半田中に拡散することによって接合不良が発生する不具合を解消するための実験を重ねた結果、半田接合によって両接合電極側の金が半田側に拡散した状態において、半田中における金の含有重量%が所定値以下である場合には、上記の如き接合不良が発生しにくくなることを発見し、本発明をなすに到ったものである。
本発明は上記に鑑みてなされたものであり、ICを搭載した実装基板上に、圧電振動子を鉛フリー半田を用いて接続固定した2階建て構造の圧電デバイスにおいて、表層に金メッキ層を備えた実装基板側の接合電極と、同様の構成を備えた圧電振動子側の接合電極とを鉛フリー半田によって接合する際に、両接合電極の金メッキ層が半田中に拡散したとしても、半田の冷却時にボイドが形成されたり、ボソボソになって剥離することにより、耐衝撃性、耐落下性が低下することを有効に防止できる技術を提供することを目的としている。
When the present inventor joins two joining electrodes having a relatively thick gold plating layer on the surface by lead-free soldering, a bonding failure occurs because the gold plating layers on the surfaces of both joining electrodes simultaneously diffuse into the solder. As a result of repeated experiments for solving the problem, when the gold content weight in the solder is not more than a predetermined value in the state where the gold on the both electrode side diffuses to the solder side by solder bonding, It has been found that such a bonding failure is less likely to occur, and the present invention has been made.
The present invention has been made in view of the above, and in a two-storey structure piezoelectric device in which a piezoelectric vibrator is connected and fixed using a lead-free solder on a mounting substrate on which an IC is mounted, a gold plating layer is provided on the surface layer. When the bonding electrode on the mounting board and the bonding electrode on the piezoelectric vibrator side having the same configuration are bonded with lead-free solder, even if the gold plating layer of both bonding electrodes diffuses into the solder, It is an object of the present invention to provide a technique capable of effectively preventing a drop in impact resistance and drop resistance by forming a void during cooling or peeling off as a bump.

上記課題を解決するため、請求項1の発明は、セラミック容器内に圧電振動素子を気密封止した圧電振動子と、IC部品を搭載した実装基板と、を備え、前記圧電振動子の接合電極と前記実装基板の接合電極とを、鉛フリー半田によって接合一体化した圧電発振器であって、前記各接合電極の各表層に金メッキ層を備えたものにおいて、前記鉛フリー半田の量に対する、前記各接合電極の表層を構成する金メッキ層の比が、7.5wt%以下であることを特徴とする。
請求項2の発明は、請求項1に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比を7.5wt%以下とするために、金メッキ層の金量を一定にしつつ、鉛フリー半田の量を増大させたことを特徴とする。
請求項3の発明は、請求項1に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比を7.5wt%以下とするために、鉛フリー半田量を増大させずに、或いは鉛フリー半田の増大量を少なくしつつ、接合電極表層の金メッキ層を薄くして金を減量することを特徴とする。
請求項4の発明は、請求項1に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比を7.5wt%以下とするために、鉛フリー半田量を増大させずに、接合電極の接合面積を小さくして金を減量することを特徴とする。
請求項5の発明は、請求項1乃至4に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比である7.5wt%以下の値が、特に7.4wt%であることを特徴とする。
In order to solve the above-described problem, the invention of claim 1 includes a piezoelectric vibrator in which a piezoelectric vibration element is hermetically sealed in a ceramic container, and a mounting substrate on which an IC component is mounted. And a piezoelectric oscillator in which the bonding electrodes of the mounting substrate are bonded and integrated with lead-free solder, and each of the bonding electrodes has a gold plating layer on each surface layer. The ratio of the gold plating layer constituting the surface layer of the bonding electrode is 7.5 wt% or less.
The invention of claim 2 is to keep the gold amount of the gold plating layer constant so that the ratio of the lead-free solder amount of claim 1 and the gold contained in the lead-free solder is 7.5 wt% or less. The amount of lead-free solder is increased.
The invention according to claim 3 is the lead-free solder amount according to claim 1 and the ratio of gold contained in the lead-free solder is 7.5 wt% or less, so that the lead-free solder amount is not increased. Alternatively, the amount of gold is reduced by thinning the gold plating layer on the surface of the bonding electrode while reducing the increase in the amount of lead-free solder.
The invention of claim 4 is to increase the ratio of the lead-free solder amount according to claim 1 and the gold contained in the lead-free solder to 7.5 wt% or less, without increasing the lead-free solder amount, The bonding area of the bonding electrode is reduced to reduce the amount of gold.
In the invention of claim 5, the value of 7.5 wt% or less, which is the ratio of the amount of lead-free solder according to claims 1 to 4 to the gold contained in the lead-free solder, is particularly 7.4 wt%. It is characterized by.

圧電振動子のセラミック容器底部にIC部品を搭載した実装基板を鉛フリー半田によって接合一体化した二階建て構造の表面実装型の圧電発振器において、使用する鉛フリー半田量増量することにより、セラミック容器及び実装基板側の各接合電極表層の金メッキ層から半田内に拡散する金量を一定の比率以下に抑えるようにしたので、接合不良を有効に防止することが可能となる。   In a surface mounted piezoelectric oscillator having a two-story structure in which a mounting substrate having IC components mounted on the bottom of a ceramic container of a piezoelectric vibrator is joined and integrated with lead-free solder, by increasing the amount of lead-free solder used, the ceramic container and Since the amount of gold diffusing into the solder from the gold plating layer on the surface of each bonding electrode on the mounting substrate side is suppressed to a certain ratio or less, it is possible to effectively prevent bonding failure.

以下、本発明を図面に示した実施の形態により詳細に説明する。
図1は本発明の一実施形態に係る表面実装型圧電発振器の縦断面図である。
この圧電発振器は、底部に表面実装用の外部電極5を備えると共に、上面に形成した凹所2内に発振回路、温度補償回路等を構成する電子部品としてIC部品3を搭載した実装基板1と、実装基板1の外枠上面に形成した接合電極4と鉛フリー半田20によって接合される接合電極11を下面に備えた圧電振動子10とを2階建て構造で接合一体化した構成を備えている。
圧電振動子10は、セラミック容器12の上面に形成した凹所13内に水晶振動素子等の圧電振動素子14を収容すると共に、凹所13を金属蓋15にて気密封止した構成を備えている。
実装基板1側の接合電極4と、圧電振動子10側の接合電極11は、例えば銅膜の上にニッケル膜、金メッキ層を順次積層した構成を備え、金メッキ層の厚さは、例えば0.5〜0.8μm程度に設定されている。
本発明では、IC部品を搭載した実装基板上に圧電振動子を載置した状態で、両者の接合電極間を鉛フリー半田にて接合する場合に、接合電極間を必要十分な接合力により接合するために各接合電極表層に厚い金属メッキ層を形成した場合においても、リフロー時に鉛フリー半田中に拡散する金の重量割合(比)を所定値以下に極限する工夫を行うことによって、半田の冷却時にボイドが形成されたり、ボソボソ化することを防止するようにしている。
Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings.
FIG. 1 is a longitudinal sectional view of a surface mount piezoelectric oscillator according to an embodiment of the present invention.
The piezoelectric oscillator includes an external electrode 5 for surface mounting at the bottom, and a mounting substrate 1 on which an IC component 3 is mounted as an electronic component constituting an oscillation circuit, a temperature compensation circuit, and the like in a recess 2 formed on the top surface. And a structure in which the bonding electrode 4 formed on the upper surface of the outer frame of the mounting substrate 1 and the piezoelectric vibrator 10 having the bonding electrode 11 bonded by the lead-free solder 20 on the lower surface are bonded and integrated in a two-story structure. Yes.
The piezoelectric vibrator 10 has a configuration in which a piezoelectric vibration element 14 such as a crystal vibration element is accommodated in a recess 13 formed on the upper surface of the ceramic container 12 and the recess 13 is hermetically sealed with a metal lid 15. Yes.
The bonding electrode 4 on the mounting substrate 1 side and the bonding electrode 11 on the piezoelectric vibrator 10 side have a configuration in which, for example, a nickel film and a gold plating layer are sequentially laminated on a copper film, and the thickness of the gold plating layer is, for example, 0. It is set to about 5 to 0.8 μm.
In the present invention, when a piezoelectric vibrator is mounted on a mounting substrate on which an IC component is mounted and the bonding electrodes are bonded with lead-free solder, the bonding electrodes are bonded with a necessary and sufficient bonding force. Therefore, even when a thick metal plating layer is formed on each bonding electrode surface layer, the weight ratio (ratio) of gold diffusing into the lead-free solder during reflow is limited to a predetermined value or less. Voids are prevented from being formed or bulging during cooling.

図2は、実装基板側の接合電極5の表層の金メッキ層の厚さを0.8μmとし、圧電振動子(この例では、水晶振動子)側の接合電極11の表層の金メッキ層の厚さを0.5μmとした場合(金メッキ層の総量は一定の場合)において、所定のマスク厚及び開口面積を有したメタルマスクを用いて接合電極5(或いは、接合電極11)上にクリームハンダを印刷する量を種々変化させて半田20内に拡散した金の相対的な重量割合(wt%)を変化させた場合に、外観から判断される接合状態の良否の変化を示す図である。
この図によれば、接合電極5上に塗布されるクリーム半田の量が、サンプル1、2の様に、70.8mg、81、9mg、というように比較的少ない為に半田20の総量中に占める金の濃度(wt%)が夫々11.3%、9.9%と大きくなる場合には、外観から判断される接続状態が明らかに悪く、ボイドが形成され、且つボソボソ化することにより、接続状態が悪化していることが観察される。
これに対して、サンプル3のように半田量を更に増量させて金濃度を9.1wt%程度に低下させた場合には、接続状態が少しく改善していることが確認できた。しかし、この状態では、ボイドが残り、且つボソボソ感もあり、依然として実用に供することはできない接続状態である。
サンプル4は、半田量を108.1mgとすることにより、金濃度を7.4wt%とした場合であり、この場合には外観上、接続状態が良好となっている。サンプル4については、信頼性の試験においても、十分満足できる結果を得られた。
なお、更なる詳細な実験の結果、鉛フリー半田によって、金メッキ層を備えた2つの接合電極間を接合した場合に、半田中に含まれる金の濃度が7.5wt%以下である場合に、接合状態が良好になることが判明した。
FIG. 2 shows that the thickness of the gold plating layer on the surface of the bonding electrode 5 on the mounting substrate side is 0.8 μm, and the thickness of the gold plating layer on the surface of the bonding electrode 11 on the piezoelectric resonator (in this example, crystal resonator) side. When the thickness is 0.5 μm (when the total amount of the gold plating layer is constant), cream solder is printed on the bonding electrode 5 (or the bonding electrode 11) using a metal mask having a predetermined mask thickness and opening area. It is a figure which shows the change of the quality of the joining state judged from an external appearance, when changing the quantity to change variously and the relative weight ratio (wt%) of the gold | metal diffused in the solder 20 is changed.
According to this figure, the amount of cream solder applied on the bonding electrode 5 is relatively small, such as 70.8 mg, 81, and 9 mg, as in Samples 1 and 2, so the total amount of solder 20 When the gold concentration (wt%) increases to 11.3% and 9.9%, respectively, the connection state judged from the appearance is clearly bad, voids are formed, and It is observed that the connection state is getting worse.
On the other hand, when the amount of solder was further increased and the gold concentration was lowered to about 9.1 wt% as in sample 3, it was confirmed that the connection state was slightly improved. However, in this state, voids remain and there is also a feeling of vomit, which is still a connection state that cannot be put to practical use.
Sample 4 is a case where the gold concentration is 7.4 wt% by setting the solder amount to 108.1 mg. In this case, the connection state is good in appearance. For sample 4, sufficiently satisfactory results were obtained even in the reliability test.
As a result of further detailed experiments, when the concentration of gold contained in the solder is 7.5 wt% or less when the two bonding electrodes provided with the gold plating layer are bonded by lead-free solder, It was found that the bonding state was good.

図3は金濃度が7.5%以下である水晶発振器の信頼性試験の結果を示しており、全試験において異常がないことが判明した。
本発明によれば、使用する鉛フリー半田の量を調整することによって、半田内への金の拡散による接合不良を防止できるため、接合工程の増大、複雑化を一切招かずに所期の効果を実現できる。
なお、このようにリフロー後における半田中の金濃度を7.5%以下とするための手法としては、半田中に拡散する金量を一定にしつつ半田量を増大させる方法の他に、半田量を増大させずに(或いは、半田の増大量を少なくして)接合電極表層の金メッキ層を薄くして拡散される金を減量したり、或いは半田量を増大させずに接合電極の接合面積を小さくして半田中に拡散される金の量を減少させる方法が考えられる。
なお、本発明は圧電発振器において、発振回路、温度補償回路等を構成するIC部品を搭載した実装基板上に圧電振動子を重ねた上で、両者の接合電極間を鉛フリー半田にて接合する場合一般に適用することができる。
また、本発明の圧電発振器を製造する実際の工程においては、多数の実装基板個片をシート状に連結した実装基板母材を用意し、この実装基板母材上に個々の圧電振動子を載置した上で、リフローによって半田接続し、接続完了後に個片に分割するバッチ処理が実施される。
本発明は、水晶振動子以外であっても、あらゆる圧電振動子を用いたタイプの圧電発振器に適用することができる。
FIG. 3 shows the results of a reliability test of a crystal oscillator with a gold concentration of 7.5% or less, and it was found that there was no abnormality in all tests.
According to the present invention, by adjusting the amount of lead-free solder to be used, bonding failure due to gold diffusion into the solder can be prevented, so that the expected effect can be achieved without incurring any increase or complexity in the bonding process. Can be realized.
In addition, as a method for setting the gold concentration in the solder after reflow to 7.5% or less in this way, in addition to the method of increasing the amount of solder while keeping the amount of gold diffusing in the solder constant, the amount of solder Without increasing the amount of solder (or reducing the amount of increase in solder), the gold plating layer on the surface of the bonding electrode is thinned to reduce the amount of gold diffused or increase the bonding electrode without increasing the amount of solder. A method of reducing the amount of gold diffused in the solder by reducing the size can be considered.
In the piezoelectric oscillator according to the present invention, a piezoelectric vibrator is stacked on a mounting substrate on which IC components constituting an oscillation circuit, a temperature compensation circuit, and the like are mounted, and the bonding electrodes of both are bonded with lead-free solder. The case can be generally applied.
In the actual process of manufacturing the piezoelectric oscillator of the present invention, a mounting board base material in which a large number of mounting board pieces are connected in a sheet form is prepared, and individual piezoelectric vibrators are mounted on the mounting board base material. Then, soldering is performed by reflow, and batch processing is performed to divide into pieces after the connection is completed.
The present invention can be applied to a piezoelectric oscillator of a type using any piezoelectric vibrator other than a crystal vibrator.

本発明の一実施形態に係る表面実装型圧電発振器の縦断面図。1 is a longitudinal sectional view of a surface mount piezoelectric oscillator according to an embodiment of the present invention. 両金メッキ層の厚さを所定に設定した場合において、使用する鉛フリー半田量を種々変化させた場合に外観から判断される接合状態の良否の変化を示す図。The figure which shows the change of the quality of the joining state judged from an external appearance, when changing the quantity of lead-free solder to be used variously when the thickness of both gold plating layers is set to a predetermined value. 金濃度が7.5%以下である水晶発振器の信頼性試験の結果を示す図。The figure which shows the result of the reliability test of the crystal oscillator whose gold concentration is 7.5% or less. 従来例の説明図。Explanatory drawing of a prior art example. (a)(b)及び(c)は図4に示した圧電発振器において接合電極間を鉛フリー半田によって接合する場合に接合不良が発生する状態を示す拡大図、時間−リフロー温度プロファイルを示す図、及び半田中における金濃度と融点との関係を示す図。(A), (b) and (c) are enlarged views showing a state in which bonding failure occurs when bonding electrodes are bonded by lead-free soldering in the piezoelectric oscillator shown in FIG. 4, and a diagram showing a time-reflow temperature profile. The figure which shows the relationship between the gold | metal density | concentration in solder, and melting | fusing point.

符号の説明Explanation of symbols

1 実装基板、2 凹所、3 IC部品、4 接合電極、10 圧電振動子、11 接合電極、12 セラミック容器、13 凹所、14 圧電振動素子、15 金属蓋、20 鉛フリー半田。   DESCRIPTION OF SYMBOLS 1 Mounting substrate, 2 recesses, 3 IC components, 4 joining electrodes, 10 piezoelectric vibrator, 11 joining electrodes, 12 ceramic container, 13 recesses, 14 piezoelectric vibrating elements, 15 metal lid, 20 lead free solder.

Claims (5)

セラミック容器内に圧電振動素子を気密封止した圧電振動子と、IC部品を搭載した実装基板と、を備え、前記圧電振動子の接合電極と前記実装基板の接合電極とを、鉛フリー半田によって接合一体化した圧電発振器であって、前記各接合電極の各表層に金メッキ層を備えたものにおいて、
前記鉛フリー半田と、鉛フリー半田に含まれる金との比が、7.5wt%以下であることを特徴とする圧電発振器。
A piezoelectric vibrator in which a piezoelectric vibration element is hermetically sealed in a ceramic container, and a mounting board on which an IC component is mounted. The bonding electrode of the piezoelectric vibrator and the bonding electrode of the mounting board are made of lead-free solder. Bonded and integrated piezoelectric oscillator, each having a gold plating layer on each surface layer of each bonded electrode,
A piezoelectric oscillator, wherein a ratio of the lead-free solder to gold contained in the lead-free solder is 7.5 wt% or less.
請求項1に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比を7.5wt%以下とするために、金メッキ層の金量を一定にしつつ、鉛フリー半田の量を増大させたことを特徴とする圧電発振器。   In order to make the ratio of the lead-free solder amount according to claim 1 and the gold contained in the lead-free solder 7.5 wt% or less, the amount of the lead-free solder is increased while keeping the gold amount of the gold plating layer constant. A piezoelectric oscillator characterized by having been made. 請求項1に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比を7.5wt%以下とするために、鉛フリー半田量を増大させずに、或いは鉛フリー半田の増大量を少なくしつつ、接合電極表層の金メッキ層を薄くして金を減量することを特徴とする圧電発振器。   In order to set the ratio of the lead-free solder amount according to claim 1 to the gold contained in the lead-free solder to 7.5 wt% or less, the lead-free solder amount is not increased or the amount of lead-free solder is increased. A piezoelectric oscillator characterized by reducing the amount of gold by reducing the gold plating layer on the surface of the bonding electrode while reducing the amount of gold. 請求項1に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比を7.5wt%以下とするために、鉛フリー半田量を増大させずに、接合電極の接合面積を小さくして金を減量することを特徴とする圧電発振器。   In order to make the ratio of the lead-free solder amount according to claim 1 and gold contained in the lead-free solder 7.5 wt% or less, the junction area of the joining electrode is reduced without increasing the lead-free solder amount. And reducing the amount of gold. 請求項1乃至4に記載の鉛フリー半田量と、鉛フリー半田に含まれる金との比である7.5wt%以下の値が、特に7.4wt%であることを特徴とする圧電発振器。   A piezoelectric oscillator characterized in that a value of 7.5 wt% or less, which is a ratio of the amount of lead-free solder according to claims 1 to 4 and gold contained in the lead-free solder, is particularly 7.4 wt%.
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JP2009207067A (en) * 2008-02-29 2009-09-10 Kyocera Kinseki Corp Piezoelectric device
DE102008017144A1 (en) 2008-04-04 2009-10-15 KLüBER LUBRICATION MüNCHEN KG Grease composition based on ionic liquids

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JP2009207067A (en) * 2008-02-29 2009-09-10 Kyocera Kinseki Corp Piezoelectric device
DE102008017144A1 (en) 2008-04-04 2009-10-15 KLüBER LUBRICATION MüNCHEN KG Grease composition based on ionic liquids

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