JP2005197340A - Power semiconductor module - Google Patents

Power semiconductor module Download PDF

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JP2005197340A
JP2005197340A JP2004000253A JP2004000253A JP2005197340A JP 2005197340 A JP2005197340 A JP 2005197340A JP 2004000253 A JP2004000253 A JP 2004000253A JP 2004000253 A JP2004000253 A JP 2004000253A JP 2005197340 A JP2005197340 A JP 2005197340A
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power semiconductor
electrode
base plate
semiconductor module
current output
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JP4336205B2 (en
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Kazuhiro Morishita
和博 森下
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique for miniaturizing a power semiconductor module by reducing the chip occupied area on the base plate, in the power semiconductor module with a reflux diode among an IGBT chip and a collector and an emitter for the IGBT chip. <P>SOLUTION: The IGBT chip 101 and a reflux diode chip are jointed with the conductive base plate 103 so that the collector electrode surface for the IGBT chip 101 and the cathode electrode surface for the reflux diode chip 102 face each other. A gate electrode terminal 105 is jointed with the base plate 103 via an insulator. A gate electrode for the IGBT chip 101 and a gate external terminal are connected by aluminum wires 110. An emitter electrode and an emitter external terminal 106 are connected by a plurality of the aluminum wires 111. A cathode electrode and the emitter external terminal 106 are connected by a plurality of the aluminum wires 112. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、パワー半導体モジュールに関し、特にモータ等の電気機器を制御する電力変換装置等に用いられるパワー半導体モジュールに関する。 The present invention relates to a power semiconductor module, and more particularly, to a power semiconductor module used for a power conversion device for controlling an electric device such as a motor.

モータ等の電気機器を制御する電力変換装置等に用いられるパワー半導体モジュールは、負荷へ供給する電流を制御するためのＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）チップを備えている。そして、このＩＧＢＴチップのコレクタ電極・エミッタ電極間には、逆方向電圧印加時の破壊防止のため、負荷電流をバイパスさせる還流ダイオードチップが接続されている。
なお、本発明に関連する先行技術が特許文献１，２に開示されている。 2. Description of the Related Art A power semiconductor module used for a power conversion device that controls an electric device such as a motor includes an IGBT (Insulated Gate Bipolar Transistor) chip for controlling a current supplied to a load. A free-wheeling diode chip that bypasses the load current is connected between the collector electrode and the emitter electrode of the IGBT chip in order to prevent breakdown when a reverse voltage is applied.
Prior arts related to the present invention are disclosed in Patent Documents 1 and 2.

特開平１１−１２１６９１号公報Japanese Patent Laid-Open No. 11-121691 特開平６−２０４３９８号公報JP-A-6-204398

一般にパワー半導体モジュール内で、ＩＧＢＴチップと還流ダイオードチップはべース板の同一面上に並列に搭載される。その結果、ＩＧＢＴチップと還流ダイオードチップのベース板上の占有面積が大きくなるため、パワー半導体モジュールの小型化は困難であった。また、各素子間や各素子と外部電極端子との配線は、ワイヤボンディングによって行われている。このため半導体チップとアルミワイヤの電気的接合面は、急峻な温度サイクルが頻繁に発生する使用環境で、熱応力により剥離が生じ易く、長期的信頼性に欠ける問題があった。   In general, in a power semiconductor module, an IGBT chip and a reflux diode chip are mounted in parallel on the same surface of a base plate. As a result, the occupied area on the base plate of the IGBT chip and the reflux diode chip is increased, and it is difficult to reduce the size of the power semiconductor module. Further, wiring between each element and between each element and the external electrode terminal is performed by wire bonding. For this reason, there is a problem that the electrical bonding surface between the semiconductor chip and the aluminum wire is liable to be peeled off due to thermal stress in a usage environment in which steep temperature cycles are frequently generated and lacks long-term reliability.

そこで本発明では、パワー半導体モジュールを小型化し、かつ電気的接合面の長期信頼性の向上を可能とする技術を提供する。   Therefore, the present invention provides a technique that makes it possible to downsize a power semiconductor module and improve long-term reliability of an electrical joint surface.

この発明に係る半導体装置においては、パワー半導体素子と、前記パワー半導体素子の電流入力電極・電流出力電極間に接続されたダイオード素子とを樹脂ケース内に備えるパワー半導体モジュールであって、前記パワー半導体素子の電流入力電極面と前記ダイオード素子のカソード電極面とが対向するように、前記パワー半導体素子と前記ダイオード素子がそれぞれ表面と裏面に接合された導電性のベース板を備えることを特徴とする。   The semiconductor device according to the present invention is a power semiconductor module comprising a power semiconductor element and a diode element connected between a current input electrode and a current output electrode of the power semiconductor element in a resin case, wherein the power semiconductor The power semiconductor element and the diode element are each provided with a conductive base plate bonded to the front surface and the back surface so that the current input electrode surface of the element and the cathode electrode surface of the diode element face each other. .

本発明は、ＩＧＢＴチップ（パワー半導体素子）のコレクタ電極（電流入力電極）面と、還流ダイオードチップ（ダイオード素子）のカソード電極面とが対向するように、ＩＧＢＴチップと還流ダイオードチップとがコレクタ電極端子を兼ねる導電性のベース板に接合されている。その結果、ベース板上のチップ占有面積が約半分になるので、パワー半導体モジュールを小型化することができる。   In the present invention, the IGBT chip and the freewheeling diode chip are arranged so that the collector electrode (current input electrode) surface of the IGBT chip (power semiconductor device) and the cathode electrode surface of the freewheeling diode chip (diode device) face each other. It is joined to a conductive base plate that also serves as a terminal. As a result, the chip occupation area on the base plate is approximately halved, so that the power semiconductor module can be reduced in size.

実施の形態１．
図１は、本実施の形態に係るパワー半導体モジュールの断面図を示す。また、図２は上面図を示す。ここで図１は、図２のＡ−Ａ線断面図に相当する。導電性材料から構成されたベース板１０３が、モジュールケース（樹脂ケース）１０９内の上下略中央部に設置されている。そして、ベース板１０３の一端は、モジュールケース１０９の外部に引き出されており、この引出部がパワー半導体モジュールのコレクタ電極端子を兼ねている。またベース板１０３の他端は、エポキシ樹脂等からなる絶縁体１０７を介してエミッタ電極端子（電流出力端子）１０６に接続されている。そしてエミッタ電極端子１０６の一部はモジュールケース１０９の外部に引き出されている。 Embodiment 1 FIG.
FIG. 1 is a sectional view of a power semiconductor module according to the present embodiment. FIG. 2 shows a top view. Here, FIG. 1 corresponds to a cross-sectional view taken along line AA of FIG. A base plate 103 made of a conductive material is installed at a substantially central portion in the upper and lower sides of the module case (resin case) 109. One end of the base plate 103 is drawn to the outside of the module case 109, and this lead portion also serves as a collector electrode terminal of the power semiconductor module. The other end of the base plate 103 is connected to an emitter electrode terminal (current output terminal) 106 via an insulator 107 made of epoxy resin or the like. A part of the emitter electrode terminal 106 is drawn out of the module case 109.

ベース板１０３の両主面には、ＩＧＢＴチップ（パワー半導体素子）１０１のコレクタ電極（電流入力電極）面（図示せず）と、還流ダイオードチップ（ダイオード素子）１０２のカソード電極面（図示せず）とが対向するように、ＩＧＢＴチップ１０１と還流ダイオードチップ１０２がはんだ等によって接合されている。   On both main surfaces of the base plate 103, a collector electrode (current input electrode) surface (not shown) of an IGBT chip (power semiconductor element) 101 and a cathode electrode surface (not shown) of a free-wheeling diode chip (diode element) 102 are provided. The IGBT chip 101 and the free-wheeling diode chip 102 are joined together by solder or the like.

またＩＧＢＴチップ１０１と同主面に、エポキシ樹脂等からなる絶縁体１０４を介して、ゲート電極端子１０５の一端が接合されている。ゲート電極端子１０５の他端は、モジュールケース１０９の外部に引き出されている。ＩＧＢＴチップ１０１のゲート電極１１４（図２参照）とゲート電極端子１０５がアルミワイヤ１１０によって接続されている。そして、ＩＧＢＴチップ１０１のエミッタ電極（電流出力電極）１１５（図２参照）が、複数のアルミワイヤ１１１によってエミッタ電極端子１０６と接続されている。還流ダイオードチップ１０２のアノード電極（図示せず）は、複数のアルミワイヤ１１２によってエミッタ電極端子１０６と接続されている。   Further, one end of the gate electrode terminal 105 is joined to the same main surface as the IGBT chip 101 via an insulator 104 made of epoxy resin or the like. The other end of the gate electrode terminal 105 is drawn out of the module case 109. The gate electrode 114 (see FIG. 2) of the IGBT chip 101 and the gate electrode terminal 105 are connected by an aluminum wire 110. The emitter electrode (current output electrode) 115 (see FIG. 2) of the IGBT chip 101 is connected to the emitter electrode terminal 106 by a plurality of aluminum wires 111. An anode electrode (not shown) of the reflux diode chip 102 is connected to the emitter electrode terminal 106 by a plurality of aluminum wires 112.

なお、モジュールケース１０９の内部はシリコンゲル１０８によって密封されている。また、ゲート電極端子１０５、ベース板１０３及びエミッタ電極端子１０６のモジュールケース外部への引出部には、外部配線を接続するネジ止め用の複数の孔１１３が設けられている。   The inside of the module case 109 is sealed with silicon gel 108. In addition, a plurality of screw holes 113 for connecting external wiring are provided in the lead-out portions of the gate electrode terminal 105, the base plate 103, and the emitter electrode terminal 106 to the outside of the module case.

本実施の形態に係るパワー半導体モジュールによれば、ＩＧＢＴチップ１０１のコレクタ電極面と還流ダイオードチップ１０２のカソード電極面とが対向するようにべース板１０３の両主面に接合されている。そのため、ベース板１０３上のチップ占有面積を従来の約半分にできる。その結果、パワー半導体モジュールの小型化が可能となる。そして、製造コスト削減による低価格化も可能となる。また、ベース板がコレクタ電極端子を兼ねているので、ＩＧＢＴチップのコレクタ電極と還流ダイオードチップのカソード電極を接続するための配線を省略することができる。   In the power semiconductor module according to the present embodiment, the collector electrode surface of the IGBT chip 101 and the cathode electrode surface of the reflux diode chip 102 are joined to both main surfaces of the base plate 103 so as to face each other. Therefore, the chip occupation area on the base plate 103 can be reduced to about half of the conventional one. As a result, the power semiconductor module can be reduced in size. In addition, the price can be reduced by reducing the manufacturing cost. Further, since the base plate also serves as a collector electrode terminal, wiring for connecting the collector electrode of the IGBT chip and the cathode electrode of the reflux diode chip can be omitted.

なお、本実施の形態ではＩＧＢＴチップ１０１を用いた例を示したが、ＭＯＳＦＥＴ等の他のパワー素子にも適用できる。また、一対のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した場合を示したが、複数のチップ対を並列に配置することもできる。   In the present embodiment, an example using the IGBT chip 101 is shown, but the present invention can also be applied to other power elements such as MOSFETs. Moreover, although the case where a pair of IGBT chip | tip 101 and the free-wheeling diode chip | tip 102 was connected was shown, several chip | tip pairs can also be arrange | positioned in parallel.

実施の形態２．
図３は、本実施の形態２に係るパワー半導体モジュールを示す断面図である。実施の形態１と同一の構成には同一の符号を付し、重複する説明は省略する。本実施の形態では、ＩＧＢＴチップ１０１のエミッタ電極１１５（図２参照）とエミッタ電極端子２０２は、板状の金属配線であるブスバー電極２０１によって接続されている。そして、還流ダイオードチップ１０２のアノード電極（図示せず）とエミッタ電極端子２０２もまたブスバー電極２０１によって接続されている。 Embodiment 2. FIG.
FIG. 3 is a sectional view showing a power semiconductor module according to the second embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted. In the present embodiment, the emitter electrode 115 (see FIG. 2) of the IGBT chip 101 and the emitter electrode terminal 202 are connected by a bus bar electrode 201 which is a plate-like metal wiring. The anode electrode (not shown) of the reflux diode chip 102 and the emitter electrode terminal 202 are also connected by the bus bar electrode 201.

本実施の形態においては、ＩＧＢＴチップ１０１のエミッタ電極１１５（図２参照）とエミッタ電極端子２０２がブスバー電極２０１によって接続されている。そして、還流ダイオードチップ１０２のアノード電極（図示せず）とエミッタ電極端子２０２もまたブスバー電極２０１によって接続されている。その結果、アルミワイヤで接続するよりも接合面が大きくなるので、機械的強度を増すことができる。また、接合面での電流密度及び接触抵抗を小さく抑えることができる。そのため、接合面で発生するジュール熱を抑えて熱応力を小さくできるので、電気的接続部の長期信頼性をさらに向上させることができる。   In the present embodiment, the emitter electrode 115 (see FIG. 2) of the IGBT chip 101 and the emitter electrode terminal 202 are connected by the bus bar electrode 201. The anode electrode (not shown) of the reflux diode chip 102 and the emitter electrode terminal 202 are also connected by the bus bar electrode 201. As a result, the joint surface becomes larger than that of connecting with an aluminum wire, so that the mechanical strength can be increased. Moreover, the current density and contact resistance at the joint surface can be kept small. Therefore, since Joule heat generated at the joint surface can be suppressed and the thermal stress can be reduced, the long-term reliability of the electrical connection portion can be further improved.

なお本実施の形態では、ＩＧＢＴチップ１０１を用いた場合を示したがＭＯＳＦＥＴ等の他のパワー素子にも適用できる。また、一対のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した場合を示したが、複数のチップ対を並列に配置することもできる。   In the present embodiment, the case where the IGBT chip 101 is used is shown, but the present invention can also be applied to other power elements such as MOSFETs. Moreover, although the case where a pair of IGBT chip | tip 101 and the free-wheeling diode chip | tip 102 was connected was shown, several chip | tip pairs can also be arrange | positioned in parallel.

実施の形態３．
図４は、本実施の形態３に係るパワー半導体モジュールを示す断面図である。本実施の形態では、ブスバー電極にベンドが付けられたベンド付きブスバー電極３０１となっている。このブスバー電極３０１のベンド部は、Ｓ字型の断面形状となっている。その他の構成は実施の形態２と同一であり、同一の構成には同一の符号を付し重複する説明は省略する。 Embodiment 3 FIG.
FIG. 4 is a cross-sectional view showing a power semiconductor module according to the third embodiment. In the present embodiment, a bus bar electrode 301 with a bend is formed by bending a bus bar electrode. The bend portion of the bus bar electrode 301 has an S-shaped cross-sectional shape. Other configurations are the same as those of the second embodiment, and the same components are denoted by the same reference numerals and redundant description is omitted.

ＩＧＢＴチップ１０１は、オン時にはＩＧＢＴチップ１０１内を流れる電流によりジュール熱が発生し、ＩＧＢＴチップ１０１の材料に応じたある熱膨張係数で膨張する。このため、ＩＧＢＴチップ１０１とベンド付きブスバー電極３０１との接合面には垂直方向に圧縮応力が発生する。この応力は、ＩＧＢＴチップ１０１からベンド付きブスバー電極３０１を上方に持ち上げるように発生する。また、ブスバー電極３０１からＩＧＢＴチップ１０１を圧縮するように発生する。   When the IGBT chip 101 is turned on, Joule heat is generated by the current flowing in the IGBT chip 101 and expands at a certain thermal expansion coefficient corresponding to the material of the IGBT chip 101. For this reason, compressive stress is generated in the vertical direction on the joint surface between the IGBT chip 101 and the bus bar electrode 301 with bend. This stress is generated so as to lift the bent bus bar electrode 301 upward from the IGBT chip 101. Moreover, it generate | occur | produces so that the IGBT chip | tip 101 may be compressed from the bus bar electrode 301. FIG.

またオフ時には、ＩＧＢＴチップ１０１は高温状態から冷却され、ＩＧＢＴチップ１０１は収縮する。このため、ＩＧＢＴチップ１０１とブスバー電極３０１との接合面には垂直方向に引張り応力が発生する。この応力は、ブスバー電極３０１を下方に引っ張るように発生する。また、ブスバー電極３０１からＩＧＢＴチップ１０１を上方に引っ張るように応力が発生する。   Further, at the time of OFF, the IGBT chip 101 is cooled from a high temperature state, and the IGBT chip 101 contracts. For this reason, tensile stress is generated in the vertical direction on the joint surface between the IGBT chip 101 and the bus bar electrode 301. This stress is generated so as to pull the bus bar electrode 301 downward. Further, stress is generated so that the IGBT chip 101 is pulled upward from the bus bar electrode 301.

以上のように、ブスバー電極３０１とＩＧＢＴチップ１０１の接合面には、スイッチングにより圧縮応力と引張り応力とを繰り返す熱応力が働き、接合面が剥離を生じ易くなる。また、還流ダイオードチップ１０２のアノード電極とベンド付きブスバー電極３０１の接合面でも、ＩＧＢＴチップ１０２のスイッチングに応じて上記と同様の現象により剥離が生じ易くなる。   As described above, thermal stress that repeats compressive stress and tensile stress by switching acts on the joint surface between the bus bar electrode 301 and the IGBT chip 101, and the joint surface is likely to be peeled off. Further, even at the joint surface between the anode electrode of the reflux diode chip 102 and the bus bar electrode 301 with the bend, peeling is likely to occur due to the same phenomenon as described above according to the switching of the IGBT chip 102.

本実施の形態では、ブスバー電極にベンド部を設けてベンド付きブスバー電極３０１とすることにより、接合面が上下に動けるように構成されている。その結果、ＩＧＢＴチップ１０１の駆動に伴う応力を吸収し、ベンド付きブスバー電極３０１との接合面における剥離を抑えることができる。   In the present embodiment, the bus bar electrode is provided with a bend portion to form a bus bar electrode 301 with a bend, so that the joint surface can move up and down. As a result, stress accompanying driving of the IGBT chip 101 can be absorbed, and peeling at the joint surface with the bend busbar electrode 301 can be suppressed.

また実施の形態２と同様に、本実施の形態においても、ベンド付きブスバー電極３０１の接合面における電流密度及び接触抵抗を小さく抑えることができる。以上から、本実施の形態に係る構成では、電気的接続部の長期信頼性をさらに向上させることができる。   Further, similarly to the second embodiment, also in this embodiment, the current density and the contact resistance at the joint surface of the bend busbar electrode 301 can be suppressed. From the above, in the configuration according to the present embodiment, the long-term reliability of the electrical connection portion can be further improved.

なお、本実施の形態では、ＩＧＢＴチップ１０１を用いた場合を示したが、ＭＯＳＦＥＴ等の他のパワー素子にも適用できる。また、一対のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した場合を示したが、複数のチップ対を並列に接続することもできる。   In the present embodiment, the case where the IGBT chip 101 is used is shown, but the present invention can also be applied to other power elements such as MOSFETs. Moreover, although the case where a pair of IGBT chip | tip 101 and the free-wheeling diode chip | tip 102 was connected was shown, several chip | tip pairs can also be connected in parallel.

実施の形態４．
図５は本実施の形態４に係るパワー半導体モジュールを示す断面図である。実施の形態１と同一の構成には同一の符号を付し、重複する説明は省略する。ＩＧＢＴチップ１０１のエミッタ電極１１５（図２参照）に加圧電極４０１（第１加圧電極）が接合されている。そして還流ダイオードチップ１０２のアノード電極（図示せず）上に加圧電極４０２（第２加圧電極）が接合されている。この加圧電極４０１，４０２は、ＩＧＢＴチップ１０１及び還流ダイオードチップ１０２の材料と熱膨張係数が近く、熱伝導率が高いモリブデン等の材料から形成されている。 Embodiment 4 FIG.
FIG. 5 is a sectional view showing a power semiconductor module according to the fourth embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted. A pressure electrode 401 (first pressure electrode) is joined to the emitter electrode 115 (see FIG. 2) of the IGBT chip 101. A pressurizing electrode 402 (second pressurizing electrode) is joined to an anode electrode (not shown) of the reflux diode chip 102. The pressurizing electrodes 401 and 402 are made of a material such as molybdenum having a thermal expansion coefficient close to that of the material of the IGBT chip 101 and the reflux diode chip 102 and having a high thermal conductivity.

本実施の形態に係るエミッタ電極端子４０３は、一部がＩＧＢＴチップ１０１及び還流ダイオードチップ１０２上に張り出すように張出部が形成されている。そして、加圧電極４０１とエミッタ電極端子４０３の張出部間に加圧部材４０４（第１加圧部材）が介挿されている。この加圧部材４０４は、例えばバネ鋼を材料とするバネである。そして、加圧電極４０１及びエミッタ電極端子４０３の張出部を加圧することで、加圧電極４０１・エミッタ電極端子４０３間を接続している。   The emitter electrode terminal 403 according to the present embodiment has an overhanging portion so that a part of the emitter electrode terminal 403 overhangs the IGBT chip 101 and the reflux diode chip 102. A pressurizing member 404 (first pressurizing member) is interposed between the projecting portions of the pressurizing electrode 401 and the emitter electrode terminal 403. The pressure member 404 is a spring made of spring steel, for example. The pressure electrode 401 and the emitter electrode terminal 403 are pressurized to connect the pressure electrode 401 and the emitter electrode terminal 403.

加圧電極４０２（第２加圧電極）とエミッタ電極端子４０３の張出部間にもまた加圧部材４０５（第２加圧部材）が介挿されている。そして、加圧電極４０２及びエミッタ電極端子４０３の張出部を加圧することで、加圧電極４０２・エミッタ電極端子４０３間を接続している。   A pressure member 405 (second pressure member) is also inserted between the pressure electrode 402 (second pressure electrode) and the protruding portion of the emitter electrode terminal 403. The pressure electrode 402 and the emitter electrode terminal 403 are pressurized to connect the pressure electrode 402 and the emitter electrode terminal 403.

以上のように構成されているので、実施の形態３と同様にＩＧＢＴチップ１０１のスイッチングにより発生する熱応力を加圧部材４０４，４０５の伸縮により吸収することが出来る。また、実施の形態２と同様に、加圧電極４０１とエミッタ電極１１５（図２参照）、及び加圧電極４０２とアノード電極（図示せず）との接合部の電流密度及び接触抵抗が小さく抑えられる。その結果、電気的接続部の長期信頼性をさらに向上させることができる。   Since it is configured as described above, the thermal stress generated by the switching of the IGBT chip 101 can be absorbed by the expansion and contraction of the pressure members 404 and 405 as in the third embodiment. Further, as in the second embodiment, the current density and the contact resistance at the junction between the pressure electrode 401 and the emitter electrode 115 (see FIG. 2) and between the pressure electrode 402 and the anode electrode (not shown) are kept small. It is done. As a result, the long-term reliability of the electrical connection portion can be further improved.

なお、本実施の形態では、ＩＧＢＴチップを用いた場合を示したが、ＭＯＳＦＥＴ等の他のパワー素子にも適用できる。また、一対のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した場合を示したが、複数のチップ対を並列に接続することもできる。   In the present embodiment, an IGBT chip is used, but the present invention can also be applied to other power elements such as MOSFETs. Moreover, although the case where a pair of IGBT chip | tip 101 and the free-wheeling diode chip | tip 102 was connected was shown, several chip | tip pairs can also be connected in parallel.

実施の形態５．
図６は本実施の形態５に係るパワー半導体モジュールの構成を示す断面図である。実施の形態１と同一の構成には同一の符号を付し、重複する説明は省略する。コレクタ電極端子を兼ねるベース板５０３の外部への引出部、及びエミッタ電極端子５０５の引出部が、差込み式コネクタ部５０２，５０４となっている。差込み式コネクタ部５０２，５０４の開口部には、外部配線との接続時に接触抵抗を抑えるため、金メッキされたコネクタ加圧部材５０１が備えられている。 Embodiment 5 FIG.
FIG. 6 is a cross-sectional view showing the configuration of the power semiconductor module according to the fifth embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted. A lead-out portion of the base plate 503 that also serves as a collector electrode terminal and a lead-out portion of the emitter electrode terminal 505 form plug-in connector portions 502 and 504. The opening portions of the plug-in connector portions 502 and 504 are provided with a gold-plated connector pressing member 501 in order to suppress contact resistance when connected to external wiring.

本実施の形態では、実施の形態１と同様にチップ占有面積を従来の約半分にできる。そのため、パワー半導体モジュールの小型化、及び製造コストを削減により低価格化が可能となる。また、コレクタ電極端子（ベース板５０３）及びエミッタ電極端子４０３は差込み式コネクタ部５０２，５０４を備えている。そのため、外部配線との脱着を容易に行うことができる。さらに、外部配線と接続するために従来技術では必須のネジが不要となる。   In the present embodiment, as in the first embodiment, the chip occupation area can be reduced to about half of the conventional one. Therefore, it is possible to reduce the price by reducing the size of the power semiconductor module and reducing the manufacturing cost. The collector electrode terminal (base plate 503) and the emitter electrode terminal 403 are provided with plug-in connector portions 502 and 504. For this reason, it is possible to easily attach and detach the external wiring. Furthermore, in order to connect with external wiring, the screw which is essential in the prior art becomes unnecessary.

なお、本実施の形態では、ＩＧＢＴチップ１０１を用いた場合を示したが、ＭＯＳＦＥＴ等の他のパワー素子にも適用できる。また、一対のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した場合を示したが、複数のチップを並列に接続することもできる。さらに、実施の形態１から４に示された構成に適用することもできる。   In the present embodiment, the case where the IGBT chip 101 is used is shown, but the present invention can also be applied to other power elements such as MOSFETs. Moreover, although the case where a pair of IGBT chip | tip 101 and the free-wheeling diode chip | tip 102 was connected was shown, a several chip | tip can also be connected in parallel. Further, the present invention can be applied to the configurations shown in the first to fourth embodiments.

実施の形態６．
図７，８は、本実施の形態６に係るパワー半導体モジュールの端面図と上面図をそれぞれ示す。図７は、図８のＢ−Ｂ線端面図に相当している。また本実施の形態は、ＩＧＢＴチップ１０１と還流ダイオードチップ１０２の一対の組を４組並列接続された例を示している。実施の形態１と同一の構成には同一の符号を付し、重複する説明は省略する。 Embodiment 6 FIG.
7 and 8 show an end view and a top view of the power semiconductor module according to the sixth embodiment, respectively. FIG. 7 corresponds to the end view taken along the line BB of FIG. The present embodiment shows an example in which four pairs of a pair of IGBT chip 101 and freewheeling diode chip 102 are connected in parallel. The same components as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

導電性材料から構成されたベース板６０１が、モジュールケース１０９の上下略中央部に設置されている。ベース板６０１の一端が、エポキシ樹脂等からなる絶縁体６０３を介してエミッタ電極端子６０４に接続されている。またベース板６０１の他端は、エポキシ樹脂等からなる絶縁体６０５を介してエミッタ電極端子６０６に接続されている。エミッタ電極端子６０４，６０６は、モジュールケース１０９側壁の上下略中央部に設置されている。そして、エミッタ電極端子６０４，６０６の一部分は、モジュールケース１０９の外部に引き出されている。   A base plate 601 made of a conductive material is installed at the substantially upper and lower central portions of the module case 109. One end of the base plate 601 is connected to the emitter electrode terminal 604 via an insulator 603 made of epoxy resin or the like. The other end of the base plate 601 is connected to the emitter electrode terminal 606 via an insulator 605 made of epoxy resin or the like. The emitter electrode terminals 604 and 606 are installed at the substantially vertical center of the side wall of the module case 109. A part of the emitter electrode terminals 604 and 606 is drawn out of the module case 109.

ベース板６０１の一方主面の中心部には、エポキシ樹脂等からなる絶縁体６０７を介してゲート電極端子６０８の一端が接合されている（図７，８参照）。ゲート電極端子６０８の他端はモジュールケース１０９の外部に引き出されている。また、ベース板６０１の一方主面には、２つのコレクタ電極端子６０２の一端がさらに接合されている。コレクタ電極端子６０２の他端は、モジュールケース１０９の外部に引き出されている。   One end of a gate electrode terminal 608 is joined to the central portion of one main surface of the base plate 601 via an insulator 607 made of epoxy resin or the like (see FIGS. 7 and 8). The other end of the gate electrode terminal 608 is drawn out of the module case 109. One end of the two collector electrode terminals 602 is further joined to one main surface of the base plate 601. The other end of the collector electrode terminal 602 is drawn out of the module case 109.

２つのコレクタ電極端子６０２は、図８中上下方向に、ゲート電極端子６０８に関して対向位置に平行に配置されている（図８参照）。さらにベース板６０１の一方主面には、４つのＩＧＢＴチップ１０１が２行２列に配置されている。これらのＩＧＢＴチップは、Ｂ−Ｂ線に関して対称に、ゲート電極端子６０８及びコレクタ電極端子６０２に対称に配置されている（図８参照）。それぞれのＩＧＢＴチップ１０１のコレクタ電極面がベース板６０１に接合されている。そして、それぞれのＩＧＢＴチップ１０１のゲート電極１１４が、ゲート電極端子６０８とアルミワイヤ１１０によって接続されている。   The two collector electrode terminals 602 are arranged in the vertical direction in FIG. 8 and parallel to the opposing positions with respect to the gate electrode terminal 608 (see FIG. 8). Further, four IGBT chips 101 are arranged in two rows and two columns on one main surface of the base plate 601. These IGBT chips are arranged symmetrically with respect to the BB line and symmetrically with respect to the gate electrode terminal 608 and the collector electrode terminal 602 (see FIG. 8). The collector electrode surface of each IGBT chip 101 is joined to the base plate 601. The gate electrode 114 of each IGBT chip 101 is connected to the gate electrode terminal 608 by the aluminum wire 110.

ベース板６０１の他方主面には、ＩＧＢＴチップ１０１に対応する位置に４つの還流ダイオードチップ１０２がそれぞれ配置されている。ベース板６０１には、ベース板６０１内部に水管６１１を通すための２つの通水孔６０９が設けられている（図８参照）。この２つの通水孔６０９はベース板６０１の図７中上下中央部に設けられている。そして、ＩＧＢＴチップ１０１の下部を通るように、左右対称な位置に設けられている。水管６１１の両端には水管継ぎ手６１０が設けられており、冷却水を供給する給水管と接続できる構成となっている。   On the other main surface of the base plate 601, four free-wheeling diode chips 102 are arranged at positions corresponding to the IGBT chips 101, respectively. The base plate 601 is provided with two water passage holes 609 for allowing the water pipe 611 to pass inside the base plate 601 (see FIG. 8). The two water passage holes 609 are provided in the upper and lower central portions of the base plate 601 in FIG. And it is provided in the left-right symmetrical position so that the lower part of IGBT chip | tip 101 may be passed. Water pipe joints 610 are provided at both ends of the water pipe 611, and can be connected to a water supply pipe that supplies cooling water.

従来技術では、ベース板の下部にヒートシンクを備えることでモジュールケース外部への放熱が可能である。一方、実施の形態１から５に開示した発明では、ベース板の両主面に半導体チップ１０１を備えているため、ベース板の下部にヒートシンクを備えることができない。そのため、熱がモジュールケース内部に溜まり易くなる。本実施の形態ではベース板が水管６０１を備えており、水冷フィンを兼用している。この水管６０１に冷却水を流すことで放熱をすることができる。そして、ベース板６０１とＩＧＢＴチップ１０１及び還流ダイオードチップ１０２間の接触熱抵抗を低減することができる。その結果、本実施の形態に係るパワー半導体モジュールは、大電流が流れるような用途にも使用することができる。また、新たに冷却器を備える必要がなく、パワー半導体モジュールを備えるシステムにおいて、小型軽量化が可能となる。   In the prior art, heat radiation to the outside of the module case is possible by providing a heat sink at the bottom of the base plate. On the other hand, in the invention disclosed in the first to fifth embodiments, since the semiconductor chip 101 is provided on both main surfaces of the base plate, a heat sink cannot be provided on the lower portion of the base plate. Therefore, heat tends to accumulate inside the module case. In the present embodiment, the base plate includes a water pipe 601 and also serves as a water cooling fin. Heat can be radiated by flowing cooling water through the water pipe 601. Further, the contact thermal resistance between the base plate 601 and the IGBT chip 101 and the reflux diode chip 102 can be reduced. As a result, the power semiconductor module according to the present embodiment can be used for applications in which a large current flows. In addition, it is not necessary to provide a new cooler, and a system including a power semiconductor module can be reduced in size and weight.

本実施の形態では、実施の形態１の構成を例として説明したが、実施の形態２〜５にも適用することが出来る。例えば図９は、実施の形態２の構成を本実施の形態に係る発明に適用した構成を示している。図７のエミッタ電極端子６０４，６０６に代えて、ＩＧＢＴチップ１０１及び還流ダイオードチップ１０２上に張り出した部位を備えるエミッタ電極端子６１２，６１３が備えられている。そして、ＩＧＢＴチップ１０１のエミッタ電極１１５（図２参照）、及び還流ダイオードチップ１０２のアノード電極（図示せず）上に加圧電極４０１，４０２がそれぞれ接合されている。   In the present embodiment, the configuration of the first embodiment has been described as an example, but the present invention can also be applied to the second to fifth embodiments. For example, FIG. 9 shows a configuration in which the configuration of the second embodiment is applied to the invention according to the present embodiment. In place of the emitter electrode terminals 604 and 606 in FIG. 7, emitter electrode terminals 612 and 613 having portions protruding on the IGBT chip 101 and the reflux diode chip 102 are provided. Pressurizing electrodes 401 and 402 are joined to the emitter electrode 115 (see FIG. 2) of the IGBT chip 101 and the anode electrode (not shown) of the reflux diode chip 102, respectively.

そして、加圧電極４０１，４０２とエミッタ電極端子６１２，６１３の張出部間に加圧部材４０４，４０５が介挿されている。そして、加圧電極４０１，４０２及びエミッタ電極端子６１２，６１３を加圧することで、加圧電極・エミッタ電極端子間を接続している。以上のように構成することで、熱応力を緩和することができ電気的接続部の長期信頼性をさらに高めることができる。   Pressure members 404 and 405 are interposed between the overhang portions of the pressure electrodes 401 and 402 and the emitter electrode terminals 612 and 613. The pressurizing electrodes 401 and 402 and the emitter electrode terminals 612 and 613 are pressurized to connect the pressurizing electrode and the emitter electrode terminal. By comprising as mentioned above, a thermal stress can be relieved and the long-term reliability of an electrical connection part can further be improved.

なお、本実施の形態では、ＩＧＢＴチップ１０１を用いた場合を示したが、ＭＯＳＦＥＴ等の他のパワー素子にも適用できる。そして、複数のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した場合を示したが、一対のチップにも適用できる。   In the present embodiment, the case where the IGBT chip 101 is used is shown, but the present invention can also be applied to other power elements such as MOSFETs. The case where a plurality of IGBT chips 101 and the free-wheeling diode chip 102 are connected is shown, but the present invention can also be applied to a pair of chips.

実施の形態７．
図１０は本実施の形態に係るパワー半導体モジュールを示す図である。本実施の形態では、ベース板７０１の一端に風冷フィン部７０２が設けられている。そして、ベース板７０１の表面にはコレクタ電極端子７０３が接合されており、モジュールケース１０９の外部に一端が引き出されている。その他の構成は実施の形態１と同様であり、同一の構成には同一の符号を付し、重複する説明は省略する。 Embodiment 7 FIG.
FIG. 10 is a diagram showing a power semiconductor module according to the present embodiment. In the present embodiment, an air cooling fin portion 702 is provided at one end of the base plate 701. A collector electrode terminal 703 is joined to the surface of the base plate 701, and one end is drawn to the outside of the module case 109. Other configurations are the same as those of the first embodiment, and the same components are denoted by the same reference numerals, and redundant description is omitted.

本実施の形態では、風冷フィン部７０２とベース板７０１とが一体化されている。従ってパワー半導体モジュールの駆動により発生する熱を、すみやかに外部に放熱できる。そして、ベース板７０１とＩＧＢＴチップ１０１及び還流ダイオードチップ１０２間の接触熱抵抗を低減することができる。その結果、消費電力が大きく、発熱量の大きな用途へ使用範囲の拡大が図れる。   In the present embodiment, the air cooling fin portion 702 and the base plate 701 are integrated. Therefore, the heat generated by driving the power semiconductor module can be quickly radiated to the outside. Then, the contact thermal resistance between the base plate 701, the IGBT chip 101, and the reflux diode chip 102 can be reduced. As a result, power consumption is large and the range of use can be expanded to applications that generate a large amount of heat.

なお、本実施の形態ではＩＧＢＴチップ１０１を用いた例を示したが、ＭＯＳＦＥＴ等の他のパワー素子にも適用できる。また、一対のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した例を示したが、複数のチップを並列に接続することもできる。   In the present embodiment, an example using the IGBT chip 101 is shown, but the present invention can also be applied to other power elements such as MOSFETs. Moreover, although the example which connected a pair of IGBT chip | tip 101 and the free-wheeling diode chip | tip 102 was shown, a some chip | tip can also be connected in parallel.

また、実施の形態１の構成を例としたが、実施の形態２〜４の構成を本実施の形態に適用することもできる。図１１は実施の形態２の構成を適用した例を示している。このような構成にすることで、ＩＧＢＴチップ１０１のスイッチングにより発生する熱応力を加圧部材４０２の伸縮により吸収することが出来る。また、加圧電極４０１とエミッタ電極１１５、及び加圧電極４０１とアノード電極（図示せず）との接合部の電流密度及び接触抵抗が小さく抑えられる。その結果、電気的接続部の長期信頼性をさらに向上させることができる。   Moreover, although the configuration of the first embodiment is taken as an example, the configurations of the second to fourth embodiments can be applied to the present embodiment. FIG. 11 shows an example in which the configuration of the second embodiment is applied. With such a configuration, the thermal stress generated by the switching of the IGBT chip 101 can be absorbed by the expansion and contraction of the pressing member 402. Further, the current density and the contact resistance at the junction between the pressurizing electrode 401 and the emitter electrode 115 and between the pressurizing electrode 401 and the anode electrode (not shown) can be kept small. As a result, the long-term reliability of the electrical connection portion can be further improved.

実施の形態８．
図１２は本実施の形態に係るパワー半導体モジュールを示す図である。本実施の形態では、ベース板８０２の一端にヒートパイプ部８０１が設けられている。その他の構成は実施の形態７と同様であり、同一の構成には同一の符号を付し、重複する説明は省略する。 Embodiment 8 FIG.
FIG. 12 shows a power semiconductor module according to the present embodiment. In this embodiment, a heat pipe portion 801 is provided at one end of the base plate 802. Other configurations are the same as those of the seventh embodiment, and the same components are denoted by the same reference numerals, and redundant description is omitted.

本実施の形態では、ヒートパイプ部８０１とベース板８０２とが一体化されている。従って半導体モジュールの駆動により発生する熱を、すみやかに外部に放熱できる。そして、ベース板８０２とＩＧＢＴチップ１０１及び還流ダイオードチップ１０２間の接触熱抵抗を低減することができる。その結果、消費電力が大きく発熱量の大きな用途へ使用範囲の拡大が図れる。   In the present embodiment, the heat pipe portion 801 and the base plate 802 are integrated. Therefore, heat generated by driving the semiconductor module can be quickly radiated to the outside. Further, the contact thermal resistance between the base plate 802, the IGBT chip 101, and the reflux diode chip 102 can be reduced. As a result, the range of use can be expanded to applications where the power consumption is large and the calorific value is large.

なお、本実施の形態ではＩＧＢＴチップ１０１を用いた例を示したが、ＭＯＳＦＥＴ等の他のパワー素子にも適用できる。また、一対のＩＧＢＴチップ１０１と還流ダイオードチップ１０２を接続した例を示したが、複数のチップを並列に接続することもできる。   In the present embodiment, an example using the IGBT chip 101 is shown, but the present invention can also be applied to other power elements such as MOSFETs. Moreover, although the example which connected a pair of IGBT chip | tip 101 and the free-wheeling diode chip | tip 102 was shown, a some chip | tip can also be connected in parallel.

また、実施の形態１の構成を例として説明したが、実施の形態２〜４の構成を本実施の形態に適用することもできる。図１３は実施の形態２の構成を適用した例を示す。ＩＧＢＴチップ１０１のスイッチングにより発生する熱応力を加圧部材４０２の伸縮により吸収することが出来る。また、加圧電極４０１とエミッタ電極（図示せず）、及び加圧電極４０１とアノード電極（図示せず）との接合部の電流密度及び接触抵抗が小さく抑えられる。その結果、電気的接続部の長期信頼性をさらに向上させることができる。   Moreover, although the configuration of the first embodiment has been described as an example, the configurations of the second to fourth embodiments can be applied to the present embodiment. FIG. 13 shows an example in which the configuration of the second embodiment is applied. Thermal stress generated by switching of the IGBT chip 101 can be absorbed by expansion and contraction of the pressure member 402. Further, the current density and the contact resistance at the junction between the pressurizing electrode 401 and the emitter electrode (not shown) and between the pressurizing electrode 401 and the anode electrode (not shown) can be kept small. As a result, the long-term reliability of the electrical connection portion can be further improved.

実施の形態１に係るパワー半導体モジュールの構成を示す断面図である。1 is a cross-sectional view showing a configuration of a power semiconductor module according to a first embodiment. 実施の形態１に係るパワー半導体モジュールの構成を示す上面図である。1 is a top view showing a configuration of a power semiconductor module according to a first embodiment. 実施の形態２に係るパワー半導体モジュールの構成を示す断面図である。FIG. 6 is a cross-sectional view showing a configuration of a power semiconductor module according to a second embodiment. 実施の形態３に係るパワー半導体モジュールの構成を示す断面図である。FIG. 6 is a cross-sectional view illustrating a configuration of a power semiconductor module according to a third embodiment. 実施の形態４に係るパワー半導体モジュールの構成を示す断面図である。FIG. 6 is a cross-sectional view showing a configuration of a power semiconductor module according to a fourth embodiment. 実施の形態５に係るパワー半導体モジュールの構成を示す断面図である。FIG. 9 is a cross-sectional view showing a configuration of a power semiconductor module according to a fifth embodiment. 実施の形態６に係るパワー半導体モジュールの構成を示す端面図である。FIG. 10 is an end view showing a configuration of a power semiconductor module according to a sixth embodiment. 実施の形態６に係るパワー半導体モジュールの構成を示す上面図である。FIG. 10 is a top view showing a configuration of a power semiconductor module according to a sixth embodiment. 実施の形態６に係るパワー半導体モジュールの変形例を示す端面図である。FIG. 10 is an end view showing a modification of the power semiconductor module according to the sixth embodiment. 実施の形態７に係るパワー半導体モジュールの構成を示す断面図である。FIG. 10 is a cross-sectional view showing a configuration of a power semiconductor module according to a seventh embodiment. 実施の形態７に係るパワー半導体モジュールの変形例を示す断面図である。FIG. 10 is a cross-sectional view showing a modification of the power semiconductor module according to the seventh embodiment. 実施の形態８に係るパワー半導体モジュールの構成を示す断面図である。FIG. 10 is a cross-sectional view showing a configuration of a power semiconductor module according to an eighth embodiment. 実施の形態８に係るパワー半導体モジュールの変形例を示す断面図である。FIG. 16 is a cross-sectional view showing a modification of the power semiconductor module according to the eighth embodiment.

符号の説明Explanation of symbols

１０１ ＩＧＢＴチップ、１０２ 還流ダイオードチップ、１０３ ベース板、１０５ ゲート電極端子、１０６ エミッタ電極端子、２０１ ブスバー電極、３０１ ベンド付きブスバー電極、４０１，４０４ 加圧電極、４０２，４０５ 加圧部材、５０１ コネクタ加圧部材、５０２，５０４ 差込み式コネクタ部、６０１ 水冷フィン兼用ベース板、６０９ 通水孔、６１０ 水管継ぎ手、６１１ 水管、７０２ 風冷フィン部、８０１ ヒートパイプ部。
101 IGBT chip, 102 freewheel diode chip, 103 base plate, 105 gate electrode terminal, 106 emitter electrode terminal, 201 bus bar electrode, 301 bus bar electrode with bend, 401, 404 pressure electrode, 402, 405 pressure member, 501 connector added Pressure member, 502, 504 plug-in connector part, 601 water cooling fin combined base plate, 609 water passage hole, 610 water pipe joint, 611 water pipe, 702 air cooling fin part, 801 heat pipe part.

Claims (8)

パワー半導体素子と、
前記パワー半導体素子の電流入力電極・電流出力電極間に接続されたダイオード素子とを樹脂ケース内に備えるパワー半導体モジュールであって、
前記パワー半導体素子の電流入力電極面と前記ダイオード素子のカソード電極面とが対向するように、前記パワー半導体素子と前記ダイオード素子がそれぞれ表面と裏面に接合された導電性のベース板
を備えることを特徴とするパワー半導体モジュール。 A power semiconductor element;
A power semiconductor module provided in a resin case with a diode element connected between a current input electrode and a current output electrode of the power semiconductor element,
The power semiconductor element and the diode element are each provided with a conductive base plate bonded to the front surface and the back surface so that the current input electrode surface of the power semiconductor element and the cathode electrode surface of the diode element face each other. A featured power semiconductor module. 前記樹脂ケース内外に延在する電流出力端子と、
前記電流出力端子と前記パワー半導体素子の前記電流出力電極、及び前記電流出力端子と前記ダイオード素子のアノード電極とを接続するブスバー電極と
をさらに備えることを特徴とする請求項１に記載のパワー半導体モジュール。 A current output terminal extending into and out of the resin case;
2. The power semiconductor according to claim 1, further comprising: the current output terminal and the current output electrode of the power semiconductor element; and a bus bar electrode connecting the current output terminal and the anode electrode of the diode element. module. 前記ブスバー電極は、ベンド部を備えていることを特徴とする請求項２に記載のパワー半導体モジュール。   The power semiconductor module according to claim 2, wherein the bus bar electrode includes a bend portion. 前記電流出力電極に接合された第１加圧電極と、
前記第１加圧電極・前記電流出力端子間に介挿され、前記第１加圧電極と前記電流出力端子とを加圧することにより接続する第１加圧部材と、
前記アノード電極に接合された第２加圧電極と、
前記第２加圧電極・前記電流出力端子間に介挿され、前記第２加圧電極と前記電流出力端子とを加圧することにより接続する第２加圧部材と、
を備えることを特徴とする請求項２に記載のパワー半導体モジュール。 A first pressure electrode joined to the current output electrode;
A first pressure member interposed between the first pressure electrode and the current output terminal, and connected by pressurizing the first pressure electrode and the current output terminal;
A second pressure electrode joined to the anode electrode;
A second pressure member interposed between the second pressure electrode and the current output terminal and connected by pressurizing the second pressure electrode and the current output terminal;
The power semiconductor module according to claim 2, further comprising: 前記ベース板は前記樹脂ケース内外に延在し、前記電流出力端子、及び前記ベース板が、前記樹脂ケース外の端部において、差込式コネクタ部を備えることを特徴とする請求項２から４の何れかに記載のパワー半導体モジュール。   5. The base plate extends in and out of the resin case, and the current output terminal and the base plate include a plug-in connector portion at an end portion outside the resin case. The power semiconductor module according to any one of the above. 前記ベース板が水冷フィンを兼用することを特徴とする請求項１から５の何れかに記載のパワー半導体モジュール。   6. The power semiconductor module according to claim 1, wherein the base plate also serves as a water cooling fin. 前記ベース板は前記樹脂ケース内外に延在し、前記樹脂ケース外において前記ベース板が空冷フィンを備えることを特徴とする請求項１から４の何れかに記載のパワー半導体モジュール。   5. The power semiconductor module according to claim 1, wherein the base plate extends inside and outside the resin case, and the base plate includes air cooling fins outside the resin case. 前記ベース板は前記樹脂ケース内外に延在し、前記樹脂ケース外において前記ベース板がヒートパイプを備えることを特徴とする請求項１から４の何れかに記載のパワー半導体モジュール。
5. The power semiconductor module according to claim 1, wherein the base plate extends inside and outside the resin case, and the base plate includes a heat pipe outside the resin case.
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