JP2005192296A - Inverter device - Google Patents

Inverter device Download PDF

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Publication number
JP2005192296A
JP2005192296A JP2003428552A JP2003428552A JP2005192296A JP 2005192296 A JP2005192296 A JP 2005192296A JP 2003428552 A JP2003428552 A JP 2003428552A JP 2003428552 A JP2003428552 A JP 2003428552A JP 2005192296 A JP2005192296 A JP 2005192296A
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Prior art keywords
electrode
bus bar
power module
inverter device
inverter
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JP2003428552A
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Tetsuya Yokoyama
哲也 横山
Kiyoshi Nemoto
清志 根本
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Inverter Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inverter device superior in productivity, reduced in wiring inductance and suppressed in jumping voltage. <P>SOLUTION: The inverter device is simplified in structures of DC input wiring bus bars that constitute a plurality of inverters, and arranged with DC input terminals composed of positive poles and negative poles of a plurality of the inverter devices in a direction where the terminals face each other. The negative poles of the respective inverter devices are connected to integrally flat-shaped conductors, and the other positive poles are connected to other integrally flat-shaped conductors, which are arranged so as to be overlapped with insulating materials between and connected to the conductors of the negative poles. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、インバータ装置に関する。   The present invention relates to an inverter device.

複数個のスイッチング素子（インバータ）を並列接続したインバータ装置は例えば特開２００３−６１３６５号公報で知られている。   An inverter device in which a plurality of switching elements (inverters) are connected in parallel is known from, for example, Japanese Patent Application Laid-Open No. 2003-61365.

上記公知例によれば、各スイッチング素子のＰ極及びＮ極端子に接続される導体を近接する面から向かい合ったＬ型形状にすると共に、絶縁シートＰ極及びＮ極導体の近接する面に沿って貼り付け、前記導体に固定した絶縁シート間に隙間を作ることで沿面距離を確保することが開示されている。   According to the above known example, the conductor connected to the P-pole and N-pole terminals of each switching element is formed in an L shape facing the adjacent surface, and along the adjacent surfaces of the insulating sheet P-pole and N-pole conductor. It is disclosed that a creepage distance is ensured by creating a gap between insulating sheets fixed to the conductor and attached to the conductor.

特開２００３−６１３６５号公報JP 2003-61365 A

上記公知例によれば、各スイッチング素子のＰ極及びＮ極端子に接続される導体（ブスバー）を近接する面から向かい合ったＬ型形状に折り曲げなければならず、折り曲げに要する時間と設備が必要となり、強いてはコストアップの要因となっていた。   According to the above known example, the conductor (bus bar) connected to the P-pole and N-pole terminals of each switching element must be bent into an L-shape facing each other from the adjacent surface, and the time and equipment required for bending are required. As a result, it was a factor of cost increase.

また、ブスバーの素材寸法の過大化，不要となる面積が多く廃棄する質量が大きい問題もある。一般にパワーモジュールから平滑コンデンサまでの配線はこのブスバーで形成されるが、モジュールの電極部の高さと平滑コンデンサの電極部の高さは大きく違い、水平状態から垂直状態に折り曲げる、また水平状態に戻すといった具合に配線しなければならなかった。   In addition, there is a problem that the material size of the bus bar is excessive, the unnecessary area is large and the mass to be discarded is large. In general, the wiring from the power module to the smoothing capacitor is formed with this bus bar, but the height of the electrode part of the module and the height of the electrode part of the smoothing capacitor are greatly different, bend from the horizontal state to the vertical state, and return to the horizontal state It had to be wired like that.

さらには、使用する素材は平角銅線もしくは平面状の銅板であり、平角銅線では折り曲げる手間が多くなり、平面状の銅板では不要な部分を削除しなければならなかった。よって、ブスバーの形状は複雑であった。   Furthermore, the material to be used is a flat copper wire or a flat copper plate, and the flat copper wire requires a lot of time to bend, and the flat copper plate has to delete unnecessary portions. Therefore, the shape of the bus bar was complicated.

ブスバーの強度から見るとパワーモジュールや平滑コンデンサの質量は大きく、折り曲げ部には少なからずストレスがかかっていて、例えば、電気車などの車両に搭載するには折り曲げ部の強度に不足が生じる問題があった。   From the viewpoint of the strength of the bus bar, the mass of the power module and the smoothing capacitor is large, and the bent part is not a little stressed. there were.

本発明の目的は、生産に優れ、配線インダクタンスが小さく、跳ね上がり電圧の抑制できるインバータ装置を提供するにある。   An object of the present invention is to provide an inverter device that is excellent in production, has a small wiring inductance, and can suppress a jumping voltage.

上記課題を解決するために、本発明は、直交三相電力変換できるモジュールからなるパワーデバイスを用いたインバータ装置を複数有し、その複数のインバータ装置の正極，負極からなる直流入力端子を互いに対面する方向に配置したインバータ装置であって、前記それぞれのインバータ装置の負極は一体平面状の導体と接続され、他方の正極は他の一体平面状の導体と接続されて前記負極の導体に絶縁物を挟んで重なり合うように配置し接続されることを特徴とする。   In order to solve the above-mentioned problems, the present invention has a plurality of inverter devices using power devices composed of modules capable of orthogonal three-phase power conversion, and direct current input terminals composed of positive electrodes and negative electrodes of the plurality of inverter devices face each other. And the negative electrode of each inverter device is connected to an integrated planar conductor, and the other positive electrode is connected to another integrated planar conductor to provide insulation to the negative conductor. They are arranged and connected so as to overlap each other.

好ましくは、インバータ装置のそれぞれの直流入力端子間に一体平面状の導体に接続された平滑コンデンサを配置することにより達成される。   Preferably, this is achieved by arranging a smoothing capacitor connected to an integral planar conductor between each DC input terminal of the inverter device.

本発明によれば、生産に優れ、配線インダクタンスが小さく、跳ね上がり電圧の抑制できるインバータ装置が提供される。   ADVANTAGE OF THE INVENTION According to this invention, it is excellent in production, wiring inductance is small, and the inverter apparatus which can suppress a jumping voltage is provided.

本発明は、特に、１つのＤＣ入力電源系統から、２つの直交三相電力変換を必要とした自己消弧型素子内蔵のパワーモジュールを使った複数のインバータ装置を平設して使用するインバータ装置に関する。   The present invention particularly relates to an inverter device using a plurality of inverter devices using a power module with a built-in self-extinguishing element that requires two orthogonal three-phase power conversions from one DC input power supply system. About.

本発明の第１の内容を盛り込んだ一実施例でパワーモジュールを図２に示す。３相ブリッジ構成の６in１パワーモジュールＡにはＤＣ入力電源の−電極に接続される２１Ｎ，
２２Ｎ，２３ＮとＤＣ入力電源の＋電極に接続される２１Ｐ，２２Ｐ，２３Ｐの端子と
ＡＣ出力の２７Ｕ，２７Ｖ，２７Ｗの端子を備える。 FIG. 2 shows a power module in one embodiment incorporating the first content of the present invention. The 6in1 power module A having a three-phase bridge configuration has 21N connected to the negative electrode of the DC input power source.
Terminals 21P, 22P, and 23P connected to 22N and 23N and the + electrode of the DC input power supply and terminals 27U, 27V, and 27W for AC output are provided.

次にパワーモジュールを横から見た図（パワーモジュール内部は透視図）を図３に示す。まず図上部の端子高さは−電極２１ＮとＵ出力２７Ｕが同一である。しかし、＋電極の
２１Ｐは−電極２１Ｎよりも低い高さに配置する。次に入力電源に接続される直流入力用ブスバーを配置し横から見た図を図４に示す。図４に示した−電極２１Ｎや＋電極２１Ｐに接続される−電極ブスバー３０や＋電極ブスバー３１の厚みは入力電流に併せて設計するが通常２〜３mmを選ぶ。本実施例では２mmの厚さとする。−電極ブスバー３０と＋電極ブスバー３１は層間容量を期待するため重なるように配置し、その間には絶縁用に絶縁プレート３２を挟み込む。その厚みは入力電圧値と絶縁プレートの絶縁耐圧に依るが本実施例では０.５mmとする。＋電極２１Ｐの上に厚さ２mmのブスバー３１、その上に厚さ０.５mmの絶縁プレート３２、その上には−電極２１Ｎに接続されるブスバー３０が積層される。 Next, FIG. 3 shows a view of the power module as seen from the side (the inside of the power module is a perspective view). First, the terminal height at the top of the figure is the same for the negative electrode 21N and the U output 27U. However, the positive electrode 21P is disposed at a lower height than the negative electrode 21N. Next, FIG. 4 shows a side view of the DC input bus bar connected to the input power source. The thickness of the -electrode busbar 30 and the + electrode busbar 31 connected to the -electrode 21N and the + electrode 21P shown in FIG. 4 is designed in accordance with the input current, but usually 2 to 3 mm is selected. In this embodiment, the thickness is 2 mm. The electrode bus bar 30 and the + electrode bus bar 31 are arranged so as to overlap each other in order to expect interlayer capacitance, and an insulating plate 32 is sandwiched between them. The thickness depends on the input voltage value and the withstand voltage of the insulating plate, but is 0.5 mm in this embodiment. A bus bar 31 having a thickness of 2 mm is formed on the positive electrode 21P, an insulating plate 32 having a thickness of 0.5 mm is formed thereon, and a bus bar 30 connected to the negative electrode 21N is stacked thereon.

以上のことから、＋電極２１Ｐの高さと−電極２１Ｎの電極部の高さ違いは２mmと0.5
mmを足して２.５mm とする。以上、＋電極２１Ｐと−電極２１Ｎの関係について説明したが、＋電極２２Ｐと−電極２２Ｎの関係，＋電極２３Ｐと−電極２３Ｎの関係も同様とする。そして、＋電極２１Ｐと＋電極２２Ｐ，＋電極２３Ｐは同一の高さとし、よって−電極２１Ｎと−電極２２Ｎ，−電極２３Ｎは同一の高さとなる。 From the above, the difference in height between the positive electrode 21P and the negative electrode 21N is 2 mm and 0.5.
Add mm to 2.5 mm. Although the relationship between the + electrode 21P and the − electrode 21N has been described above, the relationship between the + electrode 22P and the − electrode 22N and the relationship between the + electrode 23P and the − electrode 23N are the same. The + electrode 21P, the + electrode 22P, and the + electrode 23P have the same height, and thus the − electrode 21N, the − electrode 22N, and the − electrode 23N have the same height.

次に配置について説明する。今回の発明の内容は２つのインバータに関することで、上記説明した＋電極２１Ｐと−電極２１Ｎの高さ違いのモジュールを２つ用いる。それをパワーモジュールＡ２とパワーモジュールＢ３とする。配置例を図１に示す。その水平視
（モジュール内部は透視）を図９各々のモジュールを置く個所は冷却機能を有する一平面状のアルミ板３５であり、ねじなどで固定される。そしてパワーモジュールＡ２とパワーモジュールＢ３は＋電極２１ＰなどのＤＣ入力端子をお互い向かい合う方向かつ平行に配置する。出力端子２７Ｕ，２７Ｖ，２７Ｗ，２８Ｕ，２８Ｖ，２８Ｗは＋ブスバー３１や−ブスバー３０が接近しないよう図のように外側へ向くこととする。 Next, the arrangement will be described. The contents of the present invention relate to two inverters, and two modules having different heights of the + electrode 21P and the − electrode 21N described above are used. These are called power module A2 and power module B3. An arrangement example is shown in FIG. In the horizontal view (the inside of the module is seen through), the place where each module in FIG. 9 is placed is a flat aluminum plate 35 having a cooling function, and is fixed with a screw or the like. In the power module A2 and the power module B3, DC input terminals such as the + electrode 21P are arranged in parallel with each other in the facing direction. The output terminals 27U, 27V, 27W, 28U, 28V, and 28W face outward as shown in the figure so that the + bus bar 31 and the -bus bar 30 do not approach.

＋側のブスバー３１の形状について説明する。厚さ２mmの一平面状（段差のないもの）の銅板を用意し、その一銅板が各モジュールの＋電極２１Ｐ，２２Ｐ，２３Ｐ，２４Ｐ，２５Ｐ，２６Ｐのすべてに接触し＋電極固定ねじ３４でねじ止め固定されるように形成する。その銅板はモジュールと接続される側の１辺が−電極と接近しないように凸凹した感じになる。   The shape of the + side bus bar 31 will be described. Prepare a flat copper plate with a thickness of 2 mm (with no step), and the copper plate contacts all of the + electrodes 21P, 22P, 23P, 24P, 25P, and 26P of each module with the + electrode fixing screw 34 It is formed to be fixed with screws. The copper plate feels uneven so that one side on the side connected to the module does not approach the negative electrode.

−側のブスバー３０の形状について説明する。厚さ２mmの一平面状（段差のないもの）の銅板を用意し、その一銅板が各モジュールの−電極２１Ｎ，２２Ｎ，２３Ｎ，２４Ｎ，２５Ｎ，２６Ｎのすべてに接触し−電極固定ねじ３３でねじ止め固定されるように形成する。その銅板はモジュールと接続される側の１辺が＋電極と接近しないように凸凹した感じになる。   The shape of the minus side bus bar 30 will be described. Prepare a flat copper plate with a thickness of 2 mm (with no step), and the single copper plate contacts all of the -electrodes 21N, 22N, 23N, 24N, 25N, and 26N of each module with the electrode fixing screw 33. It is formed to be fixed with screws. The copper plate feels uneven so that one side on the side connected to the module does not approach the + electrode.

絶縁プレート３２は、＋側のブスバー３１と−側のブスバー３０が接触しないかつ必要十分な絶縁耐力を有する素材とする。形状は＋側のブスバー３１と−側のブスバー３０が重なる部分に足して絶縁用にかせぐ沿面距離を考慮した形となる。   The insulating plate 32 is made of a material that does not contact the + side bus bar 31 and the − side bus bar 30 and has a necessary and sufficient dielectric strength. The shape is a shape that takes into account the creeping distance that is added to the portion where the + side bus bar 31 and the-side bus bar 30 overlap each other for insulation.

以上説明したモジュールの配置に、まず＋ブスバー３１を載せパワーモジュールＡ２の＋電極端子に３箇所の＋電極固定ねじ３４でねじ止めし、パワーモジュールＢ３では＋電極端子に３箇所の＋電極固定ねじ３４でねじ止めし、さらに必要に応じて他の端子を設ける場合は任意に接続する。＋ブスバー３１を固定後、その上に絶縁プレート３２を載せる。本実施例では絶縁プレート３２を固定せず載せるだけとした。振動等の問題がある場合は別途固定台を設けてそこに固定する。次に−ブスバー３０を絶縁プレート３２の上に載せる。−ブスバー３０はパワーモジュールＡ２の−電極端子に３箇所の−電極固定ねじ
３３でねじ止めし、さらにパワーモジュールＢ３の−電極端子に３箇所の−電極固定ねじ３３でねじ止めし、さらに必要に応じて他の端子を設ける場合は任意に接続する。このとき中に挟みこんだ絶縁プレート３２が動かないように押圧させることが望ましい。 In the module arrangement described above, first, the + bus bar 31 is placed and screwed to the + electrode terminal of the power module A2 with three + electrode fixing screws 34, and in the power module B3, three + electrode fixing screws are attached to the + electrode terminal. If it is screwed with 34 and another terminal is provided as required, it is arbitrarily connected. + After fixing the bus bar 31, the insulating plate 32 is placed thereon. In this embodiment, the insulating plate 32 is simply mounted without being fixed. If there is a problem such as vibration, install a separate fixing base and fix it there. Next, the bus bar 30 is placed on the insulating plate 32. The bus bar 30 is screwed to the electrode terminal of the power module A2 with three electrode fixing screws 33, and is further screwed to the electrode terminal of the power module B3 with three electrode fixing screws 33. Accordingly, when other terminals are provided, they are arbitrarily connected. At this time, it is desirable to press the insulating plate 32 sandwiched between the plates so as not to move.

図６は本発明の第２実施例を示し、入力電源電圧の平滑用にコンデンサを配置したものである。   FIG. 6 shows a second embodiment of the present invention in which capacitors are arranged for smoothing the input power supply voltage.

その水平視（モジュール内部は透視）を図７に示す。パワーモジュールＡ２とパワーモジュールＢ３は本発明の第１と同様のモジュールを使用し、各々のモジュールを置く個所は冷却機能を有する一平面状のアルミ板３５であり、ねじなどで固定される。そしてパワーモジュールＡ２とパワーモジュールＢ３は＋電極２１ＰなどのＤＣ入力端子をお互い向かい合い平行に配置する。本発明の第１の実施例と同様に−ブスバー３７は厚さ２mmの一平面状（段差のないもの）の銅板を用意し、その一銅板が各モジュールの−電極２１Ｎ，２２Ｎ，２３Ｎ，２４Ｎ，２５Ｎ，２６Ｎのすべてに接触し−電極固定ねじ３３でねじ止め固定されるように形成する。＋側のブスバー３１も本発明の第１と同様に、＋ブスバー３８は厚さ２mmの一平面状（段差のないもの）の銅板を用意し、その一銅板が各モジュールの＋電極２１Ｐ，２２Ｐ，２３Ｐ，２４Ｐ，２５Ｐ，２６Ｐのすべてに接触し＋電極固定ねじ３４でねじ止め固定されるように形成し、−ブスバー３７や＋ブスバー３８の中央部に平滑用コンデンサ３６を接続する。   The horizontal view (the inside of the module is seen through) is shown in FIG. The power module A2 and the power module B3 use the same modules as the first of the present invention, and the place where each module is placed is a flat aluminum plate 35 having a cooling function, and is fixed with screws or the like. In the power module A2 and the power module B3, DC input terminals such as the + electrode 21P face each other and are arranged in parallel. As in the first embodiment of the present invention, the bus bar 37 is prepared as a flat plate (with no step) of 2 mm in thickness, and the copper plate serves as the negative electrode 21N, 22N, 23N, 24N of each module. , 25N, and 26N, and are configured to be screwed and fixed with an electrode fixing screw 33. As with the first embodiment of the present invention, the + bus bar 31 is also provided with a flat copper plate having a thickness of 2 mm (with no step), and the copper plate serves as the + electrodes 21P and 22P of each module. , 23P, 24P, 25P, and 26P, and is formed so as to be fixed by screwing with the + electrode fixing screw 34, and the smoothing capacitor 36 is connected to the central portion of the -bus bar 37 or + bus bar 38.

固定方法はねじ止めやスポット溶接等である。−ブスバー３７には平滑コンデンサ３６の負極側と接続し、そして絶縁プレート３２を挟む形で＋ブスバー３８を平滑コンデンサ３６のもう一方の電極に接続する。一平面状の−ブスバー３７と一平面状の＋ブスバー
３８は積層され同一平面状でない（積層する分段差が生じる）ため、平滑用コンデンサ
３６の電極の高さをブスバーに合致させる。ねじ止め式の平滑用コンデンサではコンデンサの２つの電極部には段差が付き、ブスバーのほうではコンデンサの電極が突き出るため絶縁耐力を考慮して切削するなどして逃げる必要がある。組みあがった平滑用コンデンサ３６と−ブスバー３７，絶縁プレート３２，＋ブスバー３８を、前記配列したパワーモジュールＡ２とパワーモジュールＢ３の＋電極または−電極上に乗せる感じで置く。−ブスバー３７はパワーモジュールＡ２の−電極２１Ｎ〜２３ＮとパワーモジュールＢ３の−電極２４Ｎ〜２６Ｎに−電極固定ねじ３３でねじ止め固定する。＋電極ブスバー３８はパワーモジュールＡ２の＋電極２１Ｐ,２２Ｐ,２３ＰとパワーモジュールＢ３の＋電極２４Ｐ，２５Ｐ，２６Ｐに＋電極固定ねじ３４でねじ止め固定する。 The fixing method is screwing or spot welding. The bus bar 37 is connected to the negative side of the smoothing capacitor 36, and the + bus bar 38 is connected to the other electrode of the smoothing capacitor 36 with the insulating plate 32 interposed therebetween. Since the one-plane -bus bar 37 and the one-plane + bus bar 38 are stacked and are not coplanar (a step difference is generated), the height of the electrode of the smoothing capacitor 36 is matched with the bus bar. In the screw-type smoothing capacitor, the two electrode portions of the capacitor have a step, and in the bus bar, the capacitor electrode protrudes, so it is necessary to escape by cutting in consideration of the dielectric strength. The assembled smoothing capacitor 36, the −bus bar 37, the insulating plate 32, and the + bus bar 38 are placed on the + electrode or the − electrode of the arranged power modules A2 and B3. The bus bar 37 is fixed to the negative electrodes 21N to 23N of the power module A2 and the negative electrodes 24N to 26N of the power module B3 with a negative electrode fixing screw 33. The + electrode bus bar 38 is fixed to the + electrodes 21P, 22P, and 23P of the power module A2 and the + electrodes 24P, 25P, and 26P of the power module B3 with a + electrode fixing screw 34.

本実施例の平滑用コンデンサ３６は２つ用いたものであるが電圧または電流リップルの大きさにあわせてコンデンサの数を増減させることが必要である。本実施例では平滑用コンデンサ３６を−ブスバー３７よりも上部に配置したが、平滑用コンデンサ３１を＋ブスバー３８より下部、つまりアルミ板３５の方向に配置することでも実施可能である。また、平滑用コンデンサ３６はアルミ電解コンデンサが一般的であるが大容量のフィルムコンデンサやセラミックコンデンサでも代用できる。   Although two smoothing capacitors 36 of this embodiment are used, it is necessary to increase or decrease the number of capacitors in accordance with the magnitude of voltage or current ripple. In this embodiment, the smoothing capacitor 36 is disposed above the −bus bar 37, but the smoothing capacitor 31 may be disposed below the + bus bar 38, that is, in the direction of the aluminum plate 35. The smoothing capacitor 36 is generally an aluminum electrolytic capacitor, but a large-capacity film capacitor or ceramic capacitor can be substituted.

本発明の実施例によれば、複数のインバータを組み合わせた装置において、従来複雑な形状をしていた＋ブスバーおよび−ブスバーが、一平面状となり材料費の削減，製造コストの削減できる効果がある。   According to the embodiment of the present invention, in a device in which a plurality of inverters are combined, the + bus bar and the −bus bar, which have conventionally been complicated in shape, become a single plane, which has the effect of reducing material costs and manufacturing costs. .

また、平滑用コンデンサを組み合わせることで配線インダクタンスが削減でき、モジュールをスイッチングさせることによるノイズの発生の低減や、Ｌ×（ｄｉ／ｄｔ）による跳ね上がり電圧の抑制できる効果がある。   Further, by combining the smoothing capacitor, the wiring inductance can be reduced, and there is an effect that the generation of noise can be reduced by switching the module and the jumping voltage due to L × (di / dt) can be suppressed.

本発明の一実施例におけるインバータ装置の平面図。The top view of the inverter apparatus in one Example of this invention. 本発明に用いられるパワーモジュールの平面図。The top view of the power module used for this invention. 図２の要部断面図。FIG. 3 is a cross-sectional view of a main part of FIG. 2. 図２の要部断面図にパワーモジュールとブスバー組合せた状態図。The state figure which combined the power module and the bus bar with the principal part sectional view of FIG. 本発明実施例の全体を表す要部断面図。The principal part sectional drawing showing the whole this invention Example. 本発明の他の実施例におけるパワーモジュール平面図。The power module top view in the other Example of this invention. 図６における要部断面図。The principal part sectional drawing in FIG.

符号の説明Explanation of symbols

２…パワーモジュールＡ、３…パワーモジュールＢ、５…絶縁基板、６…パワー半導体素子、７…アルミワイヤ、２１Ｎ,２２Ｎ,２３Ｎ…パワーモジュールＡの−電極、２１Ｐ，２２Ｐ，２３Ｐ…パワーモジュールＡの＋電極、２４Ｎ，２５Ｎ，２６Ｎ…パワーモジュールＢの−電極、２４Ｐ，２５Ｐ，２６Ｐ…パワーモジュールＢの＋電極、２７Ｕ，
２７Ｖ，２７Ｗ…パワーモジュールＡの出力端子、２８Ｕ，２８Ｖ，２８Ｗ…パワーモジュールＢの出力端子、３０…−ブスバー、３１…＋ブスバー、３２…絶縁プレート、３３…−電極固定ねじ、３４…＋電極固定ねじ、３５…アルミ板。
2 ... power module A, 3 ... power module B, 5 ... insulating substrate, 6 ... power semiconductor element, 7 ... aluminum wire, 21N, 22N, 23N ... negative electrode of power module A, 21P, 22P, 23P ... power module A + Electrode, 24N, 25N, 26N ...-electrode of power module B, 24P, 25P, 26P ... + electrode of power module B, 27U,
27V, 27W ... output terminal of power module A, 28U, 28V, 28W ... output terminal of power module B, 30 ...- bus bar, 31 ... + bus bar, 32 ... insulating plate, 33 ...- electrode fixing screw, 34 ... + electrode Fixing screw, 35 ... aluminum plate.

Claims (2)

直交三相電力変換できるモジュールからなるパワーデバイスを用いたインバータ装置を複数有し、その複数のインバータ装置の正極，負極からなる直流入力端子を互いに対面する方向に配置したインバータ装置であって、前記それぞれのインバータ装置の負極は一体平面状の導体と接続され、他方の正極は他の一体平面状の導体と接続されて前記負極の導体に絶縁物を挟んで重なり合うように配置し接続されることを特徴としたインバータ装置。   A plurality of inverter devices using power devices composed of modules capable of orthogonal three-phase power conversion, wherein the inverter devices are arranged in a direction facing each other direct current input terminals composed of positive and negative electrodes of the plurality of inverter devices, The negative electrode of each inverter device is connected to an integral planar conductor, and the other positive electrode is connected to another integral planar conductor, and is disposed and connected so as to overlap the negative conductor with an insulator interposed therebetween. Inverter device characterized by 請求項１記載において、インバータ装置のそれぞれの直流入力端子間に一体平面状の導体に接続された平滑コンデンサを配置することを特徴としたインバータ装置。
2. The inverter device according to claim 1, wherein a smoothing capacitor connected to an integral planar conductor is disposed between each DC input terminal of the inverter device.
JP2003428552A 2003-12-25 2003-12-25 Inverter device Pending JP2005192296A (en)

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