JP2005179716A - Sputtering apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a sputtering film of high quality having little damage and residual stress due to plasma and radiant heat thereof, at a relatively high speed. <P>SOLUTION: A sputtering apparatus has a substrate 1 to have the sputtering film formed thereon, and first and second cathodes 101 and 102 which arranges first and second targets 41 and 42 therein and are placed so as to be perpendicular to the substrate 1 and face each other, in a vacuum chamber 10. The sputtering apparatus is provided with curving-magnetic-field-generating means 6a and 6b for generating a closed-tunnel-shaped curving magnetic field 8 in which magnetic lines of force direct to an outer circumferential part from the center of the surface of the first target 41, on the back surface of the first target 41, and curving magnetic-field-generating means 6c and 6d for generating a closed-tunnel-shaped curving magnetic field 8 in which magnetic lines of force direct to the center from the outer circumferential part of the surface of the second target 42, on the back surface of the second target 42. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a sputtering apparatus used to form a thin film in the fields of magnetic recording, semiconductors, electronic components, optical components and the like.

  In general, a sputtering apparatus is used to form a thin film in the fields of magnetic recording, semiconductors, electronic components, optical components, and the like. In recent years, with an increase in recording density, integration density, thinning, etc., a high-quality film free from long-term stress, stability, denseness, damage and defects of the film itself is required.

  The stress generated in the substrate and the sputtered film depends on the temperature of the substrate and the film at the time of sputtering, the strength of the plasma exposed to the plasma, the time, and the like.

  In particular, when the substrate is a thin plastic, for example, in the case of magnetic tape, if residual stress remains between the film and the film, the film will curl, causing problems with contact with the magnetic head during recording and reproduction, If a problem occurs or if it expands or contracts with time after recording, the recording track will be removed during reproduction, and the data cannot be read.

  In addition, products that require long-term dimensional stability, such as fine wiring, semiconductor circuits, and electronic devices, cause quality inconveniences such as circuit disconnection and short-circuiting and device performance degradation.

  The conventional planar magnetron type sputtering apparatus forms a closed tunnel-like curved magnetic field on the target surface. In order to increase the probability of collision with gas molecules by applying rotational motion to electrons emitted from the target surface by this magnetic field, and by causing the electrons to rotate by a magnetic field component orthogonal to the electric field, Strong plasma can be created on the target surface by the action of pushing the electrons back to the center of curvature (see Patent Document 1).

  In general, since the target is placed in front of the substrate, the deposition rate is fast, but the substrate and the film being generated are directly affected by the radiant heat of the plasma, and in this case, ions with high energy are used. Hits the target and causes the molecule to jump out, so if the substrate is in front of the target, the incident energy of the molecule on the substrate or during film formation is large, a film with low stress, and a film with little damage and defects It was inconvenient for processes that needed

  Furthermore, in a conventional planar magnetron type sputtering apparatus, a tunnel-like curved magnetic field is formed which is closed from the center to the outer periphery of the target, but a part of the magnetic field lines are not closed but extend into the vacuum chamber and reach the substrate. Therefore, electrons rotate and move along the lines of magnetic force, so that ions are generated and a strong plasma reaches near the substrate.

  When this substrate is exposed to plasma, the sputtering film grows while being damaged by the plasma, that is, ions, and thus becomes a film with many defects.

  When a tunnel-like curved magnetic field closed from the center of the target to the outer periphery is formed, a magnetic field perpendicular to the target is always generated in the target central part and the outer peripheral part, and this part has a low electron and ion density. Since the deposition rate is higher than the sputtering rate at the target, a film is stacked on the surface of the target, and the film peels off, causing dust generation. If the film is insulative, it is charged up and causes abnormal discharge. As a result, the yield of the product was reduced.

In view of this, conventionally, a facing target sputtering type sputtering apparatus has been proposed (Patent Documents 1 and 2).
This facing target sputtering type sputtering apparatus is epoch-making in terms of improving film quality and reducing film stress in that plasma is not directly applied to a substrate.

In addition, unlike a general planar magnetron type sputtering apparatus, there are few non-erosion portions on which films are stacked, and the target utilization rate is high. In particular, when the target material is a magnetic material, it is effective for producing a magnetic field on the target surface.
JP-A-6-17248 Japanese Patent Laid-Open No. 5-182911

  However, in this conventional facing target sputtering type sputtering apparatus, the plasma can be confined between the facing targets, but the ions are actually accelerated and molecules can be knocked out in the vicinity of the surface of the target. It is in the range of about 2 to 3 mm where the electric field is called an ion sheath. The plasma density there is not so high, and the target is not facing the substrate side. In comparison, the film formation speed was less than half, and industrial productivity was high, and it was still insufficient for high-speed film formation.

  In addition, in order to increase the film formation speed with this facing target sputtering type sputtering apparatus, if the input power is increased, the plasma tends to concentrate in the center, especially when it is desired to form a film in a large area. However, when the length is increased, it is remarkable, and the deterioration of the film thickness distribution and the unevenness of target erosion are problems.

  SUMMARY OF THE INVENTION In view of this point, the present invention has an object to obtain a high-quality sputtering film that can form a film at a relatively high speed and has little damage and residual stress due to plasma and its radiant heat.

  In the sputtering apparatus of the present invention, a substrate on which a sputtering film is to be formed, and first and second cathodes arranged in a direction perpendicular to the substrate and facing each other are arranged in a vacuum chamber. In the sputtering apparatus having the first target, a first curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed to the outer peripheral portion from the central portion of the surface of the first target is provided on the back surface side of the first target. In addition, second curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed from the outer peripheral portion of the surface of the second target to the central portion is provided on the back surface side of the second target. .

  According to the present invention, since a leakage magnetic field reaching the substrate from the cathode (target) is small, a damage to the substrate and film due to plasma and its radiant heat is small, and a dense film with few defects can be obtained.

  Further, according to the present invention, a closed tunnel-like curved magnetic field is formed on the target surface, so that the film formation speed is similar to that of a planar magnetron type sputtering apparatus, and the outer peripheral vertical region that does not form this curved magnetic field is achieved. Even in the magnetic field part, the magnetic field lines are connected between the two targets, so electrons and ions reciprocate, there are few parts where the film is laminated on the target surface, and there is little dust or abnormal discharge, so it is good quality. A good film can be produced, and the product yield is improved.

  Further, according to the present invention, the direct radiant heat from the plasma is small during the film formation, and the plasma does not directly contact the substrate or the film, so that the residual stress of the film after the film formation is small. For this reason, it is convenient for forming a sputtering film on parts such as a film-like substrate and fine wiring.

  In addition, according to the present invention, a large current can be flowed compared to a conventional facing target sputtering type sputtering apparatus, and a sputtering film can be formed in a large area at a high speed.

  In addition, according to the present invention, even if the target is eroded, there is little change in the magnetic field, so there is an advantage that the change in film thickness distribution is small.

  Hereinafter, an example of an embodiment of the sputtering apparatus of the present invention will be described with reference to FIGS.

In FIG. 1, reference numeral 10 denotes a vacuum chamber. The vacuum chamber 10 is evacuated to about 1 × 10 Pa to 1 × 10 ⁻⁴ Pa by an exhaust device 13. This degree of vacuum is an optimum degree of vacuum for each process.

  The substrate holder 2 is fixedly provided at the upper central portion of the vacuum chamber 10, and the substrate 1 to which a sputtering film is to be attached is held below the substrate holder 2. As a method for holding the substrate 1 of the substrate holder 2, there are a method in which a nail-like object is hooked on a portion where film formation is not required, a magnet holder is provided, or adsorption is performed by electrostatic force.

  The substrate holder 2 is configured to flow a substrate temperature control medium 3 for controlling the temperature of the substrate 1 to a predetermined temperature, so that the substrate 1 can be maintained at an optimum temperature.

  Sputtering cathodes 101 and 102 are provided on the left and right walls in the vacuum chamber 10 so as to face each other. The two sputtering cathodes 101 and 102 are substantially perpendicular to the substrate 1 and are opposed to each other, and the substrate 1 is disposed above the two sputtering cathodes 101 and 102.

  When the substrate 1 is placed above the two sputtering cathodes 101 and 102 and the sputtering cathodes 101 and 102 are disposed substantially perpendicular to the substrate 1, if dust is generated, adhesion to the substrate 1 or abnormal discharge may occur. The influence of dust and the like on the substrate 1 is reduced.

  As the sputtering cathodes 101 and 102, a bottomed cylindrical cathode 19 is fixed via an insulator 17 in a bottomed substantially cylindrical shield plate 16, and a disk-shaped backing plate is formed on the opening side of the cathode 19. 5 is fixed, and a magnetic circuit 6 is provided on the back side of the backing plate 5 in the cathode 19.

  In this case, in this example, the sputtering cathodes 101 and 102 are arranged in the vacuum chamber 10 so that the surface sides of the backing plates 5 of the sputtering cathodes 101 and 102 face each other.

  The targets 41 and 42 to be sputtered are fixed to the surfaces of the backing plates 5 of the sputtering cathodes 101 and 102, respectively. The targets 41 and 42 are fixed to the backing plate 5 of the sputtering cathodes 101 and 102 by bonding with a low melting point metal such as indium.

  In this example, the magnetic circuit 6 provided on the back side of the target 41, that is, on the back side of the backing plate 5, faces the center magnet 6 a disposed facing the center portion of the target 41 and the outer peripheral portion of the target 41. The ring-shaped magnet 6b and the disk-shaped yoke 18 are arranged, the north pole of the center magnet 6a abuts on the backing plate 5, the south pole of the center magnet 6a abuts on the yoke 18, and the ring-shaped magnet 6b. The north pole of the ring-shaped magnet 6b is in contact with the yoke 18, and the south pole of the ring magnet 6b is in contact with the backing plate 5.

  In this case, the magnetic circuit 6 generates lines of magnetic force from the center of the surface of the target 41 toward the outer periphery, and forms a closed tunnel-like curved magnetic field 8 on the surface of the target 41.

  In this example, the magnetic circuit 6 provided on the back side of the target 42, that is, on the back side of the backing plate 5, faces the center magnet 6 c disposed facing the center portion of the target 42 and the outer peripheral portion of the target 42. The ring-shaped magnet 6d and the disk-shaped yoke 18 are arranged such that the south pole of the center magnet 6c contacts the backing plate 5, the north-pole of the center magnet 6c contacts the yoke 18, and the ring-shaped magnet 6d The south pole is in contact with the yoke 18, and the north pole of the ring-shaped magnet 6 d is in contact with the backing plate 5.

  In this case, the magnetic circuit 6 generates lines of magnetic force from the outer peripheral portion to the central portion of the surface of the target 42, and forms a closed curved magnetic field 8 on the surface of the target 42.

  The center magnets 6a and 6c and the ring magnets 6b and 6d may be permanent magnets or electromagnets.

  Further, the backing plate 5 is configured such that a target cooling medium 7 for cooling the targets 41 and 42 flows.

  Further, a DC voltage from a DC sputtering power source 15 is supplied to the backing plates 5 of the sputtering cathodes 101 and 102, or a pulse power source or a high frequency sputtering power source 14 of about 10 kHz to 100 kHz is supplied. In this example, the power sources 14 and 15 and the type of gas introduced into the vacuum chamber 10 are selectively used depending on the desired sputtering film.

  For example, when forming the same metal film as the target material, Ar gas is introduced and discharged using the DC sputtering power supply 15. When a film having high electrical resistance such as an oxide film or a nitride film is formed, oxygen and nitrogen gas are added and reacted in addition to Ar gas, and a pulse power source and a high-frequency sputtering power source 14 are used. Further, even when the targets 41 and 42 are insulating materials, sputtering is performed by generating a negative bias by the high-frequency sputtering power source 14.

  In FIG. 1, reference numeral 11 denotes a gas nozzle, and reference numeral 12 denotes a mass flow controller that automatically supplies various production gases. In the example of FIG. 1, the vacuum chamber 10 is grounded, and this vacuum chamber 10 is used as an anode.

  According to this example, since the closed tunnel-like curved magnetic field 8 is formed on the surfaces of the targets 41 and 42, the plasma can be confined and the film formation rate can be improved as in the conventional planar magnetron type sputtering apparatus. .

  Further, in this example, the magnetic poles N.P. and N.P. S is arranged, that is, the magnetic pole N is arranged in the portion corresponding to the central portion of the target 41, the magnetic pole S is arranged in the portion corresponding to the outer peripheral portion of the target 41, and the portion corresponding to the central portion of the target 42 A magnetic pole S was disposed, and a magnetic pole N was disposed at a portion corresponding to the outer peripheral portion of the target 42.

  By doing so, as shown in FIG. 2, the leaked magnetic lines other than the curved magnetic field 8 become the magnetic lines 9 reciprocating between the two targets 41 and 42, and the leaked magnetic lines can be extremely reduced toward the substrate 1, The electrons rotate and move along the lines of magnetic force to generate plasma. As a result, the plasma is suppressed very little in the vicinity of the substrate 1 and is confined between the two targets 41 and 42.

  As described above, according to this example, since the leakage magnetic field reaching the substrate from the targets 41 and 42 of the sputtering cathodes 101 and 102 is small, damage to the substrate 1 and the film due to plasma and its radiant heat is small, and it is dense and has few defects. A membrane can be obtained.

  In addition, according to the present example, the closed tunnel-like curved magnetic field 8 is formed on the target surface, so that the film forming speed similar to that of the planar magnetron type sputtering apparatus is achieved, and the outer peripheral portion where the curved magnetic field 8 is not formed. Even in the vertical magnetic field portion, the magnetic field lines 9 are connected between the two targets 41 and 42, so that electrons and ions reciprocate and there are few portions where a film is laminated on the surfaces of the targets 41, 42, dust generation, Since the occurrence of abnormal discharge is small, a high-quality film can be produced and the product yield is improved.

  Further, according to this example, the direct radiant heat from the plasma is small during the film formation, and the plasma does not directly contact the substrate 1 or the film, so that the residual stress of the film after the film formation is small. For this reason, it is convenient for forming a sputtering film on parts such as the film-like substrate 1 and fine wiring.

  Moreover, according to this example, compared with the conventional facing target sputtering type sputtering apparatus, a large current can be passed, and a sputtering film can be formed in a large area at a high speed.

  In addition, according to this example, even if the targets 41 and 42 are eroded, there is little change in the magnetic field, so there is a benefit that there is little change in the film thickness distribution.

  FIGS. 3, 4, 5, and 6 show other examples of the best mode for carrying out the present invention, respectively. FIG. 3, FIG. 4, FIG. 5, and FIG. Parts corresponding to 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 3 shows an example in which a pulse power source of 10 kHz to 100 kHz and an AC power source 20 of a high frequency power source are supplied between the backing plates 5 of the sputtering cathodes 101 and 102, ie, the targets 41 and 42 in the example of FIG. The other example in FIG. 3 is the same as that in FIG.

  In this example of FIG. 3, by alternately applying an AC voltage of 10 kHz to 100 kHz to the two targets 41 and 42, the charge-up on the target surface is removed, and the oxide film and the nitride film can be formed at high speed with less abnormal discharge. I can make a film.

  Also in this case, since there is little magnetic field leakage to the substrate 1, there is no impact on the substrate 1 due to electrons jumping out from the targets 41 and 42 at the moment when the polarity of the voltage changes, and there is no damage due to plasma, so that high-quality film formation can be performed. In addition, it can be easily understood that the same operational effects as in FIG. 1 can be obtained in this FIG. 3 example.

  FIG. 4 shows an example in which the film-forming speed is further increased than that in FIG. 1. This example in FIG. 4 lies laterally below the sputtering cathodes 101 and 102 in the vacuum chamber 10 in FIG. Two sputtering cathodes 103 and 104 are provided side by side.

  Targets 43 and 44 are fixed to the surface of the backing plate 5 of the sputtering cathodes 103 and 104, respectively. The targets 43 and 44 are fixed to the backing plate 5 of the sputtering cathodes 103 and 104 by bonding with a low melting point metal such as indium.

  The sputtering cathode 103 adjacent to the sputtering cathode 101 is configured in the same manner as the sputtering cathode 102, and the magnetic circuit 6 provided on the back side of the target 43, that is, on the back side of the backing plate 5, is arranged facing the center of the target 43. Center magnet 6c, a ring-shaped magnet 6d disposed opposite to the outer periphery of the target 43, and a disk-shaped yoke 18. The S pole of the center magnet 6c abuts against the backing plate 5, and the center magnet The north pole of 6c contacts the yoke 18, the south pole of the ring-shaped magnet 6d contacts the yoke 18, and the north pole of the ring-shaped magnet 6d contacts the backing plate 5.

  In this case, the magnetic circuit 6 generates lines of magnetic force from the outer peripheral portion to the central portion of the surface of the target 43 and forms a closed tunnel-like curved magnetic field 8 on the surface of the target 43.

  The sputtering cathode 104 adjacent to the sputtering cathode 102 is configured in the same manner as the sputtering cathode 101, and the magnetic circuit 6 provided on the back side of the target 44, that is, on the back side of the backing plate 5, is arranged facing the center portion of the target 44. The center magnet 6a is composed of a ring-shaped magnet 6b disposed opposite to the outer periphery of the target 44, and a disc-shaped yoke 18. The N pole of the center magnet 6a abuts against the backing plate 5, and the center magnet 6a The S pole of the ring-shaped magnet 6 b contacts the yoke 18, and the S pole of the ring-shaped magnet 6 b contacts the backing plate 5.

  In this case, the magnetic circuit 6 generates magnetic lines of force from the center of the surface of the target 44 toward the outer periphery, and forms a closed tunnel-like curved magnetic field 8 on the surface of the target 44.

  In this case, the leakage magnetic field lines 9 and 9a reciprocate between the opposing or adjacent targets 41, 42, 43, and 44, and the leakage magnetic field is reduced as much as possible. Since sputtering is also performed from the lower side, the film forming speed is further increased.

  In this case, when forming the same metal film as the target material, Ar gas is introduced and discharged using the DC power supply 15. When a film having high electrical resistance such as an oxide film or a nitride film is formed, oxygen and nitrogen gas are added to react with Ar gas, and a pulse power source and high frequency power source 14 are used. In this case, power sources 14 and 15 may be provided for the sputtering cathodes 101, 102, 103, and 104, respectively, in order to reduce the influence of film formation stop during abnormal discharge.

  When it is desired to form an oxide film, a nitride film, etc. at high speed, an AC power supply 20 is supplied between the sputtering cathode 101 and the sputtering cathode 103 and between the sputtering cathode 102 and the sputtering cathode 104, respectively, and a voltage of 10 to 100 kHz is alternately applied. Make a call.

  In the example of FIG. 5, the targets 41 and 42 of the sputtering cathodes 101 and 102 perpendicular to the substrate 1 of FIG. 1 are inclined toward the substrate 1. The rest of the configuration is the same as in FIG.

  In the example of FIG. 5 as well, the same operational effects as in the example of FIG. 1 can be obtained. However, in this example of FIG. 5, the targets 41 and 42 face the direction of the substrate 1, so that the film forming speed can be increased accordingly.

  Therefore, the example of FIG. 5 is suitable for use when the product to be formed is more important than the film quality.

  FIG. 6 shows an example in which a plurality of, for example, two sets of sputtering apparatuses as shown in FIG.

  In the example of FIG. 6, the substrate holders 2a and 2b are fixedly provided at the upper central portions of the vacuum chamber 10 divided into two equal parts in the lateral direction, and a sputtering film is formed below the substrate holders 2a and 2b. The substrates 1a and 1b to be attached are held.

  Sputtering cathodes 101a and 102b are provided on the left and right side walls of the vacuum chamber 10 so as to oppose each other, and the sputtering cathode 102a is opposed to the sputtering cathode 101a at a bisected position in the lateral direction of the vacuum chamber 10. The sputtering cathode 101b is provided opposite to the sputtering cathode 102b and back to back with the sputtering cathode 102a.

  The sputtering cathodes 101a and 102a and the sputtering cathodes 101b and 102b are substantially perpendicular to the substrates 1a and 1b, respectively, and the substrates 1a and 1b are arranged above the sputtering cathodes 101a, 102a and 101b, 102b, respectively. .

  The sputtering cathode 101a is configured in the same manner as the sputtering cathode 101, and the sputtering cathode 102b is configured in the same manner as the sputtering cathode 102.

  In this example, the sputtering cathodes 102a and 101b are configured as shown in FIG. That is, the cylindrical cathode 19a is fixed in the cylindrical shield plate 16a via the insulator 17, and the disk-shaped sputtering cathodes 102a and 101b backing plates 5a and 5b are respectively installed in one and the other openings of the cathode 19a. The magnetic circuit 6 is provided between the backing plates 5a and 5b.

  In this case, in this embodiment, the surface sides of the backing plates 5 and 5a of the sputtering cathodes 101a and 102a are opposed to each other, and the surface sides of the backing plates 5b and 5 of the sputtering cathodes 101b and 102b are opposed to each other.

  Targets 41a, 42a, 41b and 42b to be sputtered are respectively fixed to the surfaces of the backing plates 5, 5a, 5b and 5 of the sputtering cathodes 101a, 102a, 101b and 102b.

  In this example, the magnetic circuit 6 provided on the back side of the target 42a of the sputtering cathode 102a, that is, the back side of the backing plate 5a and on the back side of the target 41b of the sputtering cathode 101b, that is, the back side of the backing plate 5b is the center of each of the targets 42a and 41b. And a ring-shaped magnet 6f disposed opposite to the outer peripheral portions of the targets 42a and 41b, and the south pole of the center magnet 6e abuts against the backing plate 5a. The north pole of the center magnet 6e is in contact with the backing plate 5b, the south pole of the ring magnet 6f is in contact with the backing plate 5b, and the north pole of the ring magnet 6f is in contact with the backing plate 5a.

  In this case, the magnetic circuit 6 generates magnetic lines of force from the outer peripheral portion to the central portion of the surface of the target 42a, forming a closed tunnel-like curved magnetic field 8 on the surface of the target 42a and at the center of the surface of the target 41b. Magnetic field lines are generated from the portion toward the outer peripheral portion, and a closed tunnel-like curved magnetic field 8 is formed on the surface of the target 41b.

  The target cooling medium 7 for cooling the targets 42a and 41b is also supplied to the backing plates 5a and 5b. DC sputtering power is supplied to the backing plates 5, 5a, 5b and 5 of the sputtering cathodes 101a, 102a, 101b and 102b. The rest of the configuration is the same as in FIG.

  In such a sputtering apparatus as shown in FIG. 6, the same effect as in FIG. 1 can be obtained, and products of two sputtering films can be formed simultaneously. In addition, by configuring as the sputtering cathodes 102a and 101b in FIG. 6, it is possible to reduce the size of the sputtering apparatus for obtaining a product having a plurality of sputtering films.

  In the above example, the circular target 41 and 42 are used for the circular substrate 1. However, when the substrate 1 on which the sputtering film is to be formed has a thin strip shape as shown in FIG. The substrate holder 2 is a roll whose temperature is controlled as shown in FIG. 7, and the thin belt-like substrate 1 is formed while being wound around the roll 2 as the substrate holder.

  In this case, the target 4 provided in the vacuum chamber 10 is rectangular as shown in FIG. 7, and a sputtering cathode similar to FIG. 1 is provided. The rest of the configuration is the same as in FIG.

  It can be easily understood that the same operational effects as in FIG. 1 can be obtained in this FIG. 7 example.

  Of course, the present invention is not limited to the above-described examples, and various other configurations can be adopted without departing from the gist of the present invention.

It is sectional drawing which shows the structure of the example of the best form for implementing this invention sputtering device. It is a diagram of the principal part with which it uses for description of FIG. It is sectional drawing which shows the structure of the other example of this invention. It is sectional drawing which shows the structure of the other example of this invention. It is sectional drawing which shows the structure of the other example of this invention. It is sectional drawing which shows the structure of the other example of this invention. It is a perspective view which shows the principal part of the other example of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Board, 2 ... Board holder, 4, 41, 41a, 41b, 42, 42a, 42b, 43, 44 ... Target, 5, 5a, 5b ... Backing plate, 6a, 6c, 6e ... Center Magnet, 6b, 6d, 6f ... Ring magnet, 8 ... Curved magnetic field, 9 ... Reciprocal magnetic field lines, 10 ... Vacuum chamber, 11 ... Gas nozzle, 13 ... Exhaust device, 14 ... High frequency sputtering power supply, 15 DC sputtering power supply, 101, 101a, 101b, 102, 102a, 102b, 103, 104 ... Sputtering cathode

Claims (6)

In a sputtering apparatus, comprising: a substrate on which a sputtering film is provided in a vacuum chamber; and first and second cathodes arranged in a direction perpendicular to the substrate and opposite to each other so as to dispose the first and second targets.
Provided on the back side of the first target is first curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed from the central portion of the surface of the first target to the outer peripheral portion thereof. 2. A sputtering apparatus, comprising: a second curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed from the outer peripheral portion of the surface of the second target to the central portion on the back surface side of the target. The sputtering apparatus according to claim 1, wherein
A sputtering apparatus, wherein the substrate is disposed above the first and second targets. The sputtering apparatus according to claim 1, wherein
A sputtering apparatus, wherein a leakage magnetic field line other than a curved magnetic field from the surfaces of the first and second targets reciprocates between the first and second targets. The sputtering apparatus according to claim 1, wherein
A sputtering apparatus, wherein high-frequency AC power is supplied between the first and second targets. In a sputtering apparatus, comprising: a substrate on which a sputtering film is provided in a vacuum chamber; and first and second cathodes arranged with first and second targets that are inclined and opposed to the substrate, respectively.
Provided on the back side of the first target is first curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed from the central portion of the surface of the first target to the outer peripheral portion thereof. 2. A sputtering apparatus, comprising: a second curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed from the outer peripheral portion of the surface of the second target to the central portion on the back surface side of the target. Sputtering apparatus having a plurality of sets of a substrate on which a sputtering film is provided and a first and a second cathode in which a first and a second target are arranged in a direction perpendicular to the substrate and facing each other in a vacuum chamber In
Provided on the back side of the first target is first curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed from the central portion of the surface of the first target to the outer peripheral portion thereof. 2. A sputtering apparatus, comprising: a second curved magnetic field generating means for generating a closed tunnel-shaped curved magnetic field in which magnetic lines of force are directed from the outer peripheral portion of the surface of the second target to the central portion on the back surface side of the target.

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