JP2005175178A - Supercritical fluid processor and its method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a supercritical fluid processor and its method for quickly and uniformly washing or drying a substrate having a fine structure without using any mechanical agitation by preventing the generation of a pattern distortion. <P>SOLUTION: This supercritical fluid processor is configured by placing an object to be processed on a holding means in a high pressure container, and introducing fluid as a medium which becomes gas in normal temperature and normal pressure, and which becomes liquid under a high pressure to the high pressure container in a liquid or supercritical state in order to wash or dry the object to be processed. The holding means is provided with a heating means having a plurality of independent heating sources for heating the object to be dried. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention is a novel superconductor for cleaning a semiconductor substrate when forming a semiconductor, a mask, a MEMS element, a minute mechanical part, etc., and drying a substrate having a microstructure immersed in a rinse solution after a development (etching) step. The present invention relates to a critical fluid processing apparatus and method.

  Pattern miniaturization in large-scale, high-performance device manufacturing such as VLSI and MEMS devices has been promoted remarkably, and recently, it is possible to form fine patterns of less than 100 nm. For this reason, a pattern having a large pattern aspect ratio, that is, a dimension ratio of height to width is being formed.

  Such a pattern is formed through the steps of cleaning → rinse cleaning (water washing) → drying after performing etching using the resist pattern as a mask. For this reason, the resist pattern used as a mask inevitably has a high aspect ratio. With resist, the molecular weight and molecular structure change depending on the presence or absence of exposure, and as a result, the pattern is formed by the difference in dissolution rate in the developer between the exposed and unexposed areas when immersed in the developer. It is a polymer thin film that can be used. Also in this case, after the development, drying is performed through a treatment with a rinse solution.

  As a big problem at the time of drying in this fine pattern formation, a phenomenon of pattern collapse is seen. As shown in FIG. 8, this occurs with the drying of the rinsing liquid, and is a phenomenon that appears more prominent particularly in the pattern 400 having a high aspect ratio. In principle, as shown in FIG. 8 and FIG. Furthermore, this is due to the bending force 500 acting on the pattern 400 due to the pressure difference between the rinse liquid 501 remaining between the patterns 400 and the external air 502 when the substrate is dried.

  Non-patent document 1 reports that the magnitude of the bending force 500 depends on the surface tension of the rinsing liquid 501. The bending force 501 has such a force that not only the resist pattern 400 but also the pattern 400 itself such as silicon is distorted. Therefore, the problem of the surface tension of the rinsing liquid 501 is important. .

  In order to solve this problem, it is known to use a rinse liquid having a low surface tension. For example, although the surface tension of water is about 72 dyn / cm, it becomes about 23 dyn / cm in methanol, and the degree of collapse can be suppressed smaller by drying after replacing water with methanol rather than drying from water. Furthermore, although it is effective to use a perfluorocarbon having a surface tension of 20 dyn / cm or less, it can be said that there is a slight effect in reducing the fall because there is a surface tension even if it is a little. It is not a complete solution to the problem, but a fundamental solution to the surface tension problem is made possible by the use of a rinsing liquid with zero surface tension, i.e. using a supercritical fluid. .

  A supercritical fluid has a dissolving power comparable to that of a liquid, but its surface tension and viscosity are close to those of a gas. Therefore, if the film is dried in a supercritical state, the influence of the surface tension can be ignored, and the pattern collapse phenomenon does not occur at all. As shown in the phase diagram of carbon dioxide in FIG. 10, since carbon dioxide has a low critical point (7.3 MPa, 304 K) and is chemically stable, it is used as a supercritical fluid for a biological sample for electron microscope observation. It is known from Patent Document 1 that it is used for drying.

  In Patent Document 2, (1) liquid (cleaning liquid, etching liquid, developer or rinsing liquid) is agitated or directly agitated by rotating the substrate, and (2) indirect by rotating or swinging the reaction tank itself. It has been shown that efficient replacement and drying can be achieved by typical liquid stirring, (3) liquid stirring using ultrasonic vibration, and the like.

Applied Physics Letter, 66, 2655-2657

JP 50-12653 A JP-A-11-87306

  However, even in a drying method using a low surface tension rinse solution, the surface tension (capillary force) of the rinse solution remaining between patterns when the dimension between patterns formed on the substrate, that is, the space width is about 90 nm or less. As a result, the problem that the Laplace force acts between the patterns and the pattern collapses occurs. Furthermore, even in a drying process using an ultra-low surface tension rinse liquid such as perfluorocarbon, pattern collapse cannot be prevented when the pattern width is reduced to 70 nm or less.

  In addition, the conventional supercritical drying method takes a long time for rinsing liquid and liquid carbon dioxide to be replaced, and requires a long time of several tens of minutes to 1 hour or more. Since the replacement efficiency of the rinsing liquid and liquid carbon dioxide is very poor for the pattern, the rinsing liquid remaining between the patterns cannot be replaced even if a replacement time of about 3 hours is set. For this reason, surface tension acts between the patterns during drying, and pattern collapse cannot be prevented completely. In addition, even with a large-diameter substrate, the entire surface could not be uniformly dried.

  Furthermore, since the replacement processing time of the rinsing liquid and liquid carbon dioxide is long, the energy consumption of driving the pressure pump for liquid carbon dioxide delivery and the consumption amount of liquid carbon dioxide are increased.

  Further, in Patent Document 2, by constructing a mechanism for stirring a liquid or a substrate inside a high-pressure drying treatment container, secondary obstacles such as dust generated from the mechanism portion occur, and high cleaning can be achieved. There is a problem that is disturbed.

  In addition, if the reaction vessel itself is rotated or oscillated, or if ultrasonic vibration is used, the mechanism for rotating or oscillating the reaction vessel itself is increased in size, and further, secondary obstacles due to the vibration of the ultrasonic transducer are caused. As a result, the influence of heat energy outside the control due to heat generation becomes a problem.

  An object of the present invention is to provide a supercritical fluid processing apparatus and method capable of uniformly cleaning or drying a substrate having a fine structure without mechanical collapse without causing pattern collapse in a short time. is there.

  The present invention resides in a high-pressure drying processing apparatus having a function of generating a state change such as a vortex or a pulsating flow in a rinsing liquid or a dry solvent in the vicinity of an object to be dried by incorporating a holder having a temperature control function. In other words, the specific gravity and density of the liquid are changed by directly heating the rinsing liquid in the vicinity of the material to be dried and the carbon dioxide, which is the drying solvent, and the treatment is performed by improving the substitution efficiency of the rinsing liquid and carbon dioxide as the drying solvent Reduce time.

  Specifically, the present invention is such that a workpiece is placed on a holding means in a high-pressure vessel, and a fluid that is a gas at normal temperature and normal pressure and a liquid at high pressure is used as a solvent in the high-pressure vessel. In a supercritical fluid processing apparatus that is introduced in a critical state to clean or dry the object to be processed, the holding means includes heating means having a plurality of independent heating sources for heating the object to be dried. To do.

  Delivery means for compressing and delivering the solvent from the storage container; Filtration means for filtering the delivered solvent; Discharge for introducing the filtered solvent into the high-pressure container and discharging it after washing or drying It is preferable that the holding means has a round shape or a square shape in a planar shape of a mounting surface on which the workpiece is mounted.

  Further, the present invention is arranged such that each heating source is uniformly distributed radially from the center of the planar shape so that the entire processing target is uniformly heated on the mounting surface on which the processing target is mounted. The mounting surface has the same planar shape, and has setting means for arbitrarily setting the time for turning on and off each of the heating sources and the interval time thereof, and the setting means is set to ON and OFF. It is preferable that the period for performing the adjustment can be adjusted to 2 Hz to 3 kHz, and that the heating source is a heater or a high-frequency induction coil.

  Furthermore, the present invention places an object to be treated immersed or wet in a rinsing liquid on a holding means in a high-pressure vessel, and becomes a solvent in the high-pressure vessel, which is a gas at normal temperature and normal pressure, and a liquid under high pressure. In the supercritical fluid processing method of introducing the fluid to be liquid or in a supercritical state to wash or dry the object to be processed, replacing the rinse liquid with the fluid while partially heating the object to be dried Features.

  The partial individual heating is performed for each of the equally divided regions on the mounting surface on which the workpiece is placed, and the individual partial heating cycle is adjusted to 2 Hz to 3 kHz and The order of individual heating, the time to turn off, and the interval time are arbitrarily set, and further, the partial heating is performed for each region evenly and radially distributed with respect to the center of the planar shape. It is preferable that heating is performed in the same planar shape on the mounting surface of the object to be dried.

  The heating is sequentially performed so that the ON time of each heating in each of the equally distributed regions does not overlap with the ON time of the heating in other regions, or sequentially performed with a time difference for each region, and the covered It is preferable that the temperature of the solvent in the vicinity of the dried product is locally changed to cause a change in state due to density and vortex or convection in the rinse liquid and the solvent.

  The object to be processed is installed in the high pressure vessel in a state of being immersed or wet in a rinsing liquid, and the rinsing liquid is removed from the object to be processed by the fluid introduced into the high pressure container. Is preferably dried.

  According to the present invention, it is possible to drastically shorten the replacement time when the rinsing liquid is replaced with a liquid carbon dioxide solvent, and further, it is possible to perform uniform replacement between ultrafine structures, such as LSI. Has a fine structure such as a resist for manufacturing a large-scale substrate, has a pattern width of 70 nm or less, in particular, a pattern width of 30 nm or less, and does not collapse a pattern on a substrate having a diameter of 100 mm or more, and can be dried uniformly over the entire surface. A processing speed applicable to the device manufacturing line can be obtained. In addition, energy consumption can be suppressed by shortening the processing time, and costs can be reduced.

  Furthermore, by shortening the replacement time of the rinsing liquid and liquid carbon dioxide as a solvent, it is possible to suppress the consumption of the pumping pump driving energy and liquid carbon dioxide for liquid carbon dioxide delivery, and to achieve highly clean washing or drying. It is possible to provide a supercritical fluid processing apparatus and method that can be performed.

  Hereinafter, the best mode for carrying out the present invention will be described in detail by way of specific examples, but the present invention is not limited to the examples.

  FIG. 1 is a block diagram showing a configuration of a fine structure drying apparatus using supercritical carbon dioxide according to the present embodiment. The microstructure drying apparatus of this embodiment includes a container 100 composed of a liquid collecting cylinder with a siphon tube and a cold evaporator (hereinafter referred to as CE) holding a drying solvent (liquid) to be a supercritical fluid, a valve 104 for supplying a drying solvent, High pressure pump 101 that compresses and sends dry solvent, impurities that are dissolved in moisture contained in dry solvent, and metal fine particles that are dissolved from liquid collection cylinders with siphon tube, etc., have a coarseness of 3 μm to 3 nm A filter 102, a high-pressure drying processing vessel 103 having both heating and cooling means, a holder 106 for installing and holding an object to be dried 107, and a control valve 105 for releasing the supercritical fluid after the drying processing to the atmosphere. .

  In the drying process using supercritical fluid by supercritical carbon dioxide, first, the rinse liquid used for cleaning the object 107 to be dried and accumulated between the ultrafine patterns is washed with liquid carbon dioxide, and the rinse liquid is liquid carbon dioxide. It begins by replacing with. If the rinsing liquid used for washing the object to be dried 107 is not miscible with carbon dioxide, it is necessary to replace this rinsing liquid with another rinsing liquid having affinity for carbon dioxide. Examples of the rinsing liquid that can be replaced by dissolving in liquid carbon dioxide include 2-propanol, ethanol, alcohol, and the like.

  FIG. 2 is a configuration diagram showing the holder, its heating source, and control circuit unit according to the present invention. As shown in FIG. 2, a holder 106 for installing and holding an object to be dried 107 provided in the high-pressure drying treatment container 7, a heating source 200 for heating the holder 106, and a control for the heating source 200 The control unit 201 is included. The holder 106 is a cross-sectional view in a plane parallel to the mounting surface of the object 107 to be dried. In the heating source 200, a heating wire heater or a high-frequency induction coil is embedded in the holder 106, and as shown in FIG. 2, eight are evenly arranged in the same plane shape at a predetermined interval radially from the center of the holder 106. Each heating source 200 can be controlled independently by the control unit 201. The planar shape of the holder 106 is a round shape as shown in FIG. 2, but it may be a square shape because it is used in accordance with the planar shape of the object 107 to be dried.

  FIG. 3 is a plan view showing a heating source in the microstructure drying apparatus of the present invention. As shown in FIG. 3, the eight heating sources 200 are sequentially heated in accordance with the numbers shown in the drawing according to the state in which the respective heating sources 200 are turned on / off as shown in FIGS. 4 and 5. The individual heating sources 200 in FIG. 3 are arranged with a slight interval, but the intervals can be arranged so as to intersect with each other so that the heaters and coils in FIG. May be.

  In FIG. 4, the heater 200 is sequentially turned on and heated from (1) to (8) to heat the liquid carbon dioxide 301 to change the state of the liquid 302, and the operation is repeated once. In FIG. 5, the heater 200 is skipped from (1) to (4), and each of the heaters 200 is sequentially turned on by (5) to (8) and heated. This operation is repeated once. That is, when the ON / OFF control of the heating source 200 incorporated in the holder 106 is started, the liquid temperature of the rinse liquid 300 and the carbon dioxide 301 in the heated part rises, and convection due to the liquid temperature change occurs, and further The rinse liquid 300 can be replaced with the carbon dioxide 301 in a short time by the rotational flow (stirring effect) by ON / OFF control of the heating source 200.

  Also, in this embodiment, the adjacent heating sources 200 are sequentially turned on / off rather than sequentially being turned on / off, as shown in FIG. Since it is not affected by the heating source 200, it is effective when the aspect ratio is large.

  As described above, by turning on / off the individual heating sources 200 in a predetermined order, the temperature of the rinsing liquid 300 and the liquid carbon dioxide 301 rises in the heated portion, and the rinsing to the liquid carbon dioxide 301 is performed. The solubility of the liquid 300 increases. Furthermore, by repeating ON / OFF of the heating source 200 many times, the liquid carbon dioxide 301 becomes lighter or heavier, and ascending and descending flows are generated, and convection also becomes active. The time for replacement with the liquid carbon dioxide 301 can be shortened.

  FIG. 6 is a cross-sectional view showing a state in which the rinsing liquid 300 is replaced with a liquid 302 whose density has changed due to heating of liquid carbon dioxide 301 as a dry solvent. The right half is the heated part and the left half is the non-heated part. Such heating is sequentially performed in a very short time as will be described later. As shown in FIG. 6, the rinsing liquid 300 is one in which the liquid carbon dioxide 301 is partially and sequentially replaced by the liquid 302 that has been heated and changed in density as described above. In FIG. 6, as described above, the boundary of the liquid 302 whose state has changed is actually not clear from the liquid carbon dioxide 301, an upward flow and a downward flow are generated, and convection is also active. In the to-be-dried object 107 having a very fine wiring structure having a space width of 90 nm or less and a high aspect ratio, the interval between the wirings is also extremely small, so that it is difficult to replace the rinsing liquid 300 between the wirings. As in this embodiment, since the stirring by the local thermal convection is performed by the direct local heating of the material to be dried 107, the carbon dioxide 301 can be efficiently replaced in a short time. . 6 shows a structure in which the liquid carbon dioxide 301 is placed only on the object to be dried 107. In practice, however, the entire interior of the high-pressure drying treatment container 103 is covered with the liquid carbon dioxide 301 as shown in FIG. It is the one that is full.

  FIG. 7 is a diagram showing the relationship between time and temperature. As shown in FIG. 7, each heating portion is performed by a heating cycle of several hundred μs to several s for a very short time. Local heating for 10 seconds or more has a large effect of partial heating and is not very effective. The above-described efficient rinsing solution 300 can be replaced by a heating cycle of 300 μs to 3 s for a very short time.

  Hereinafter, the drying method of the fine structure in the present embodiment will be described with reference to the above-described drawings. First, an object to be dried 107 to be dried is mounted on a holder 106 in a high-pressure drying processing container 103 having both heating and cooling means, and the lid of the high-pressure drying processing container 103 is closed.

  Next, the valve 104 that is an overhead valve of the cylinder 100 is opened from a liquid collecting cylinder with a siphon tube storing liquid carbon dioxide 301 as a dry solvent, a container made of CE, or the like. When the valve 104 is opened, the liquid carbon dioxide 301 is sent out to start the operation of the high-pressure pump 101, and the high-pressure pump 101 compresses and pumps a flow rate necessary for replacement of a rinsing liquid 300 described later.

  The liquid carbon dioxide 301 pumped by the high-pressure pump 101 contains impurities dissolved in water contained in the liquid carbon dioxide 301 by a filter 102 that matches the roughness of the eye for removal, such as a sintered filter or a membrane filter. Metal fine particles that have melted out of a siphon tube with a siphon tube are filtered and separated to be highly purified.

  When the highly purified liquid carbon dioxide 301 is introduced into the high-pressure drying treatment vessel 103, the material 106 to be dried is filled with the liquid carbon dioxide 301, and the rinsing liquid 300 remaining between the microstructures is liquid dioxide. Substitution proceeds from the point of contact with carbon 301. At this time, the heating source 200 composed of the above-described heater or high-frequency induction coil incorporated in the holder 106 is controlled by ON / OFF control according to a preset condition as shown in FIG. 4 or FIG.

  When the ON / OFF control of the heating source 200 incorporated in the holder 106 is started, the liquid temperature of the rinse liquid 300 and the liquid carbon dioxide 301 at the heated part rises. In particular, when the temperature of liquid carbon dioxide 301 is changed from the normal liquid temperature of about 20 ° C to about 40 ° C, convection occurs due to the liquid temperature change, or the density changes from about 0.75g / ml to about 0.5g / ml. This also changes the solubility. Further, the rinsing liquid 300 is replaced with the liquid carbon dioxide 301 in a short time by the rotating flow (stirring effect) controlled by the control circuit unit 201 which is turned on / off according to the above-described conditions of the heating source 200.

  In the conventional fine-structure drying equipment, it takes several minutes to 10 minutes to compress the cylinder pressure of liquid carbon dioxide to the supercritical pressure. In the process of the embodiment, the replacement of the rinse liquid can be almost completed before the supercritical pressure is reached.

  After replacement of the rinsing liquid is completed, all the heating sources 200 incorporated in the holder 106 are turned on while maintaining the pressure of the drying solvent, and the temperature in the vicinity of the object 107 to be dried is controlled to 40 ° C. The temperature and pressure (critical conditions of carbon dioxide: 304 K, 7.3 MPa) are converted into liquefied carbon dioxide 301 into supercritical carbon dioxide, and the temperature of the high-pressure drying treatment vessel 103 is increased. Thereby, the liquid carbon dioxide 301 becomes a supercritical state.

  After entering the supercritical state, open the control valve 105 while maintaining the control temperature of 40 ° C., and release the supercritical carbon dioxide to the outside while maintaining the temperature of the high-pressure drying treatment vessel 103 at the supercritical temperature or higher. Then, the temperature of the high-pressure drying treatment container 102 is cooled to about room temperature, and the drying is finished. Thus, the drying can be completed in a highly clean state without going through the gas / liquid interface because the supercritical state is released. At this time, carbon dioxide is not liquefied even if the pressure is lowered, so that no surface tension is generated.

  As described above, in the microstructure drying apparatus of the present embodiment, the dimension between patterns formed on the substrate is controlled by controlling the heating source 200 with a heater or a high-frequency induction coil divided into four or more holders 106. That is, even when the space width is about 90 nm or less, or about 40 nm or less, or even when the aspect ratio is large in a structure of several μm such as a MEMS element, the control pattern for controlling the heating cycle of the heating source 200 is adjusted to adjust the control pattern. The rinsing liquid in the vicinity of the dried product and between the fine structures and the liquid carbon dioxide as the drying solvent can be replaced within tens of seconds to several minutes.

  Moreover, the disadvantage of the conventional critical point drying method that the drying treatment time is long and the disadvantage that a uniform drying result cannot be obtained on the entire surface of a large-diameter substrate can be solved, and an LSI or the like is manufactured on a large scale. Therefore, it has a fine structure such as a resist, and the pattern width is 70 nm or less, particularly 30 nm or less, and the pattern on the substrate having a diameter of 100 mm or more can be dried uniformly and further uniformly dried. Applicable.

  Furthermore, it is possible to provide a pressure pump driving energy for liquid carbon dioxide delivery, and a microstructure drying apparatus and method capable of suppressing the consumption of liquid carbon dioxide. And, without controlling the entire high-pressure drying treatment vessel to the supercritical temperature as in this embodiment, the liquid temperature inside the vessel is controlled to be in a supercritical state, thereby reducing energy consumption and heating heating time. Needless to say, it is shortened.

It is a block diagram of the microstructure drying apparatus which concerns on this invention. It is a block diagram of the holder which has the heat source of this invention, and its control unit. It is a block diagram which shows arrangement | positioning of the heat source in the holder of this invention. It is a figure which shows the heating process of the heat source in the holder of this invention. It is a figure which shows the heating process of the heat source in the holder of this invention. It is sectional drawing which shows the replacement process of the rinse liquid and carbon dioxide by the microstructure drying apparatus which concerns on this invention. It is a state figure which shows the heating time and temperature of the heating source of this invention. It is a schematic diagram which shows the collapse phenomenon of the fine pattern of a semiconductor device. It is a schematic diagram explaining the collapse phenomenon of the fine pattern of a semiconductor device. It is a phase diagram of carbon dioxide.

Explanation of symbols

100 ... bomb, 101 ... high pressure pump, 102 ... filter, 103 ... high pressure drying container, 104 ... valve, 105 ... control valve, 106 ... holder, 107 ... object to be dried, 200 ... heating source, 201 ... control circuit unit, 300, 501 ... rinsing liquid, 301 ... liquid carbon dioxide, 302 ... changed liquid, 400 ... pattern, 500 ... bending force, 502 ... air.

Claims (16)

  An object to be processed is placed on a holding means in a high-pressure vessel, and a fluid that is a gas at normal temperature and normal pressure and a liquid at high pressure is introduced into the high-pressure vessel in a liquid or supercritical state. In the supercritical fluid processing apparatus for cleaning or drying an object, the holding means includes a heating means having a plurality of independent heating sources for heating the object to be dried.   2. The sending means for compressing and sending the solvent from a storage container according to claim 1, a filtering means for filtering the sent solvent, and introducing the filtered solvent into the high-pressure vessel for the washing or A supercritical fluid processing apparatus comprising: a discharge means for discharging after drying.   3. The supercritical fluid processing apparatus according to claim 1, wherein the holding unit has a round shape or a square shape as a planar shape of a mounting surface on which the workpiece is mounted.   4. The heating source according to claim 1, wherein the heating sources are evenly arranged radially with respect to the center of the planar shape on the mounting surface on which the workpiece is mounted, and each heating source has a planar shape on the mounting surface. A supercritical fluid processing apparatus characterized by being the same.   5. The fine structure drying apparatus according to claim 1, further comprising a setting unit that arbitrarily sets a time for turning on and off each of the heating sources and an interval time thereof.   6. The fine structure drying apparatus according to claim 5, wherein the setting means is capable of adjusting the ON and OFF cycle to 2 Hz to 3 kHz.   7. The microstructure drying apparatus according to claim 1, wherein the heating source is a heater or a high frequency induction coil.   The supercritical fluid processing apparatus according to claim 1, wherein the holding unit includes a temperature sensor.   An object to be treated immersed or wet in a rinsing liquid is placed on the holding means in the high-pressure vessel, and a fluid that is a gas at normal temperature and normal pressure and a liquid that is liquid under high pressure is used as a solvent in the high-pressure vessel. A supercritical fluid processing method for cleaning or drying the object to be processed by introduction in a critical state, wherein the rinse liquid is replaced with the fluid while partially heating the object to be dried. Processing method.   10. The fine structure drying method according to claim 9, wherein the partial individual heating is performed for each of the equally divided regions on the mounting surface on which the workpiece is placed.   In Claim 9 or 10, the period of the individual partial heating is adjusted to 2 Hz to 3 kHz, and the order of the individual heating, the time to turn off, and the interval time are arbitrarily set. Microstructure drying method.   In any one of Claims 9-11, while performing the said partial heating for every area | region uniformly distributed radially with respect to the center of the said planar shape, this each heating is the same in the mounting surface of the said to-be-dried material A supercritical fluid processing method characterized by being performed in a planar shape.   In any one of Claims 9-12, each said heating is performed sequentially so that the ON time of each said heating in each said equally distributed area may not overlap with the ON time of the heating of another area | region, or each area | region Supercriticality characterized in that it is sequentially performed with a time difference every time, and the temperature of the solvent in the vicinity of the material to be dried is locally changed, and the rinse liquid and the solvent generate a state change due to density and vortex or convection. Fluid processing method.   The supercritical fluid processing method according to claim 9, wherein the temperature of the object to be processed is detected, and the heating is performed based on the detected temperature.   The supercritical fluid processing method according to any one of claims 9 to 14, wherein the solvent is compressed and filtered, and the filtered solvent is introduced into the high-pressure vessel and discharged after the washing or drying. .   16. The rinsing apparatus according to claim 9, wherein the object to be processed is placed in the high-pressure vessel in a state of being immersed or wet in a rinsing liquid, and the rinsing is performed from the object to be processed by the fluid introduced into the high-pressure vessel. A supercritical fluid processing method comprising removing a liquid and drying the object to be processed.

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