JP2005161185A - Metal film forming method and apparatus therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming a metal thin film on the surface of a coating object and an apparatus therefor capable of forming the metal thin film even on a fine part of the surface of the coating object by spraying a solution dissolving metal fine particles therein from a spray nozzle toward the coating object. <P>SOLUTION: The metal film forming apparatus is provided with a solution chamber 10 for storing the solution 11 dissolving the metal fine particles therein whose surface is covered with an oxidation prevention film, the spray nozzle 12 which sprays the solution 11 in the solution chamber 10 toward a wafer 13 and a stage 14 which is arranged on the lower side of the spray nozzle 12 and mounts the wafer 13 on the upper surface thereof. By moving the spray nozzle 12 and the wafer 13 mounted on the stage 14 relatively in the two dimensional direction, the solution 11 of metal fine particles is applied on the surface of the wafer 13 and the thin film is formed. Thereby, the dense metal thin film can be formed even on the fine part of the surface of the wafer 13 in a normal pressure atmosphere. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method and an apparatus for forming a metal film on the surface of an object to be coated such as a semiconductor substrate or a glass substrate for FPD, and more specifically, a solution in which metal fine particles having a particle surface covered with an antioxidant film are dissolved. The present invention relates to a metal film forming method and apparatus capable of forming a metal film on a fine portion of the surface of a coating object by spraying from a spray nozzle toward the coating object.

  An aluminum metal film has been used for wiring of a conventional semiconductor device. Aluminum can be easily formed into a thin film by using a vacuum film forming apparatus such as sputtering or vacuum deposition, and a fine wiring pattern can be formed with high precision by dry etching using a reactive gas. It was generally used as a metal film.

However, with the advancement of processing technology in recent years, the demand for higher integration and higher speed of semiconductor devices has become higher. However, when aluminum is used as a wiring material, its conductivity is low. In addition, the electrical resistance increases with the miniaturization of the wiring, causing problems such as heat generation, signal delay, and disconnection due to electromigration. Therefore, recently, as a wiring material replacing aluminum, a material having high conductivity such as copper has been examined. And thin film formation using copper was generally performed by the electrolytic solution plating method in electrolytic solution (for example, refer to patent documents 1).
JP-A-6-260762

  However, in such a conventional method for forming a copper thin film by electrolytic plating, as shown in FIG. 8, in a contact hole 3 for connecting a lower layer wiring 1 such as a semiconductor gate and an upper layer wiring 2 in a multilayer wiring. It was difficult to embed copper 4. In particular, in the case of highly integrated multi-layer wiring, the width of the contact hole 3 is reduced, so that it is difficult for the electrolytic solution to enter the contact hole 3 in the plating process. In this case, as shown in FIG. 8, the air in the contact hole 3 may not escape and remain as bubbles 5, so that the copper 4 plating film is interrupted in the middle of the contact hole 3, and the lower layer wiring 1 and In some cases, connection with the upper layer wiring 2 could not be made. Even when the electrolytic solution can enter the contact hole 3, the copper 4 plating film grows from the inner wall surface of the contact hole 3, so that the copper 4 embedded in the contact hole 3 as shown in FIG. 9. In some cases, a missing portion 6 is generated at the center of the wiring. In this case, an electrolytic solution such as copper sulfate remains confined in the defective portion 6, so that there is a problem that the copper 4 is corroded by the remaining electrolytic solution and the wiring is disconnected. .

  Therefore, the present invention addresses such problems and sprays a solution in which metal fine particles whose particle surfaces are covered with an anti-oxidation film are dissolved from a spray nozzle toward the application object, thereby providing a coating object. An object of the present invention is to provide a metal film forming method and apparatus capable of forming a metal film on a fine portion of the surface.

  In order to achieve the above object, the metal film forming method according to the present invention stores a solution in which fine metal particles whose particle surfaces are covered with an antioxidant film is dissolved in a solution chamber, and the solution in the solution chamber is stored in the solution chamber. By spraying the spray nozzle from the spray nozzle toward the application object, and moving the spray nozzle and the application object in a two-dimensional direction relatively, the metal fine particle solution is applied to the surface of the application object to form a thin film. Is formed.

  By carrying out such a method, the metal fine particle solution in the solution chamber is sprayed from the spray nozzle toward the application object, and the spray nozzle and the application object are relatively moved in a two-dimensional direction, A thin metal film is formed by applying a solution of metal fine particles to a fine portion of the surface of the object to be coated.

  Further, the spray of the solution from the spray nozzle onto the object to be applied is performed in a normal pressure atmosphere. Thereby, a thin film of metal fine particles is formed on the surface of the coating object without using a vacuum film forming apparatus.

  Further, the coating object may be heated to a predetermined temperature to fuse the metal fine particles applied to the surface of the coating object. Thereby, the metal microparticles | fine-particles apply | coated to the surface of the said application | coating target fuse | melt, and a precise | minute metal film is formed.

  The metal film forming apparatus according to the present invention also includes a solution chamber for storing therein a solution in which metal fine particles whose particle surfaces are covered with an anti-oxidation film are dissolved, and a solution connected to the solution chamber by a pipe. A spray nozzle that sprays toward the object; and a stage that is disposed below the spray nozzle and places an application object on an upper surface thereof, the spray nozzle and an application object placed on the stage; Is moved in a two-dimensional direction relatively to apply a solution of the metal fine particles to the surface of the coating object to form a thin film.

  With such a configuration, a solution in which fine metal particles whose particle surfaces are covered with an anti-oxidation film is stored inside the solution chamber, and the solution inside is applied by a spray nozzle connected to the solution chamber by a pipe. The spray target is placed on a mounting surface of a stage disposed below the spray nozzle, and the spray nozzle and the coating target placed on the stage are relatively separated from each other. By moving in the dimensional direction, the metal fine particle solution is also applied to the fine portions of the surface of the application object, thereby forming a thin film.

  Here, the stage includes a heating unit that heats the application object placed on the upper surface thereof to a predetermined temperature. Thereby, the application | coating target object mounted on the mounting surface is heated to predetermined temperature by the heating means of the said stage.

  The stage on which the application object is placed may be fixed, and the spray nozzle may be moved in a two-dimensional direction. Alternatively, the spray nozzle may be fixed and the stage on which the application target is placed may be moved in a two-dimensional direction. As a result, the spray nozzle and the application object placed on the stage are relatively moved in a two-dimensional direction, and the metal fine particle solution is applied over the entire surface of the application object to form a thin film. It is formed.

  According to the metal film forming method of the first aspect, the solution of the metal fine particles in the solution chamber is sprayed from the spray nozzle toward the application object, and the spray nozzle and the application object are relatively two-dimensionally aligned. By moving, a thin metal film can be formed by applying a solution of metal fine particles to the surface of the object to be coated. Therefore, a metal film can be formed also on a fine portion of the surface of the application target. In addition, since a metal film can be formed on the surface of the object to be coated without using an electrolytic solution, it does not corrode during film formation.

  According to the invention of claim 2, the spray of the solution from the spray nozzle onto the object to be coated is performed in a normal pressure atmosphere, so that the surface of the object to be coated can be obtained without using a vacuum film forming apparatus. In addition, a thin film of metal fine particles can be formed.

  Further, according to the invention according to claim 3, the dense object is formed by heating the application object to a predetermined temperature and fusing the metal fine particles applied to the surface of the application object. Can do. At this time, since the metal fine particles are fused at a temperature lower than the melting point of the metal, the metal film formed on the surface of the object to be coated can be fired at a low temperature.

  Further, according to the metal film forming apparatus according to claim 4, a solution of metal fine particles in which the particle surface accommodated in the solution chamber is covered with the antioxidant film is sprayed from the spray nozzle toward the application object, By placing an application object on the upper surface of the stage disposed below the spray nozzle, and relatively moving the spray nozzle and the application object placed on the stage in a two-dimensional direction, A thin film can be formed by applying the metal fine particle solution onto the surface of the object to be coated. Therefore, a metal film can be formed also on a fine portion of the surface of the application target. In addition, since a metal film can be formed on the surface of the object to be coated without using an electrolytic solution, it does not corrode during film formation.

  Here, according to the invention which concerns on Claim 5, a coating target object can be heated to predetermined temperature with the heating means with which the said stage was equipped. Therefore, it is possible to form a dense metal film by heating the application object and fusing the metal fine particles applied to the surface of the application object. At this time, since the metal fine particles are fused at a temperature lower than the melting point of the metal, the metal film formed on the surface of the object to be coated can be fired at a low temperature.

  And according to the invention concerning Claim 6 or Claim 7, the stage which mounted the said application target object is fixed, the said spray nozzle is moved to a two-dimensional direction, or the said spray nozzle is fixed. By moving the stage on which the application object is placed in a two-dimensional direction, the spray nozzle and the application object placed on the stage are relatively moved in a two-dimensional direction. Thus, a thin film can be formed by applying the metal fine particle solution over the entire surface of the object to be coated.

  Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic configuration diagram showing an embodiment of a metal film forming method and a metal film forming apparatus according to the present invention. The metal film forming apparatus is directly used for carrying out the metal film forming method according to the present invention.

  First, in the metal film forming method according to the present invention, in FIG. 1, a solution 11 in which metal particles whose particle surfaces are covered with an antioxidant film is dissolved in a solution chamber 10, and the solution in the solution chamber 10 is stored. 11 is sprayed from the spray nozzle 12 toward the wafer 13 to be applied, and the spray nozzle 12 and the wafer 13 placed on the stage 14 are relatively moved in a two-dimensional direction, whereby the wafer 13 The metal fine particle solution 11 is applied to the surface of the film to form a thin film.

  That is, the solution chamber 10 contains a solution 11 in which the metal fine particles 16 whose particle surfaces shown in FIG. 2 are covered with the antioxidant film 15 are uniformly dissolved in a volatile solvent. The metal fine particle 16 is called a nanoparticle obtained by reducing a metal having a high conductivity such as copper, gold, or silver to a nanosize, and has an average particle diameter d of about several tens of nanometers. Since the fine metal particles 16 are stably dispersed in a volatile solvent, have good oxidation resistance in a normal temperature / normal pressure atmosphere, and have good dispersibility when pasted, the surface of the wafer 13 shown in FIG. It has excellent properties as a material for forming a metal thin film for wiring. Further, as shown in the enlarged portion P, the metal fine particles 16 can be evenly embedded in the wiring groove 13 a having a line width w of about 1 μm formed on the surface of the wafer 13. The material of the metal fine particles 16 is not limited to copper, gold, and silver, and may be aluminum, nickel, or chromium depending on the application.

  Then, from the spray nozzle 12 connected to the bottom surface of the solution chamber 10 shown in FIG. 1 by a solution supply pipe 17, the solution 11 of the metal fine particles 16 is sucked and sprayed toward the wafer 13. Here, the spray of the solution 11 from the spray nozzle 12 to the wafer 13 is performed in a normal temperature / normal pressure atmosphere, and can be easily performed on the surface of the wafer 13 without using a vacuum film forming apparatus such as sputtering or vacuum deposition. A thin film is formed. In this state, the spray nozzle 12 and the wafer 13 placed on the placement surface 14a of the stage 14 are relatively moved in the two-dimensional directions of X and Y. That is, as shown in FIG. 4, for example, the stage 14 on which the wafer 13 is placed is fixed, and the spray nozzle 12 is moved in the X and X ′ directions in a plane parallel to the paper surface of FIG. It is only necessary to move in the Y and Y ′ directions (not shown) in a plane perpendicular to the paper surface. On the contrary, the spray nozzle 12 may be fixed and the stage 14 on which the wafer 13 is placed may be moved in the two-dimensional directions of X and Y.

  As a result, the solution 11 of the metal fine particles 16 sprayed from the spray nozzle 12 is sprayed and applied to the entire surface of the wafer 13, so that the entire surface of the wafer 13 is as shown in FIG. Further, a thin film made of the metal fine particles 16 covered with the antioxidant film 15 is formed. At this time, a thin film of metal fine particles 16 is also formed in the wiring groove 13a on the surface of the wafer 13 shown in the enlarged portion P of FIG.

  The application of the solution 11 from the spray nozzle 12 to the wafer 13 is performed while the wafer 13 is heated to a predetermined temperature by the heater 18 provided on the mounting surface 14a side of the stage 14 shown in FIG. The metal fine particles 16 applied to the surface of the wafer 13 are fused at a temperature lower than the melting point of the metal because the particle size d is reduced to nano-size. For example, in the case of copper nanoparticles, they are fused at about 150 ° C., which is lower than the melting point of copper. Therefore, when the solution 11 is applied by the spray nozzle 12 while heating the wafer 13 to about 200 ° C., for example, as shown in FIG. It will be in a state where they are fused. As a result, the copper thin film 16 ′ can be fired even on a fine portion of the surface of the wafer 13. Further, since the copper thin film 16 'can be formed on the entire surface of the wafer 13 without using an electrolytic solution, the thin film does not corrode during film formation.

  Next, a metal film forming apparatus according to the present invention will be described. This metal film forming apparatus forms a metal film on the surface of an object to be coated such as a semiconductor substrate or a glass substrate for FPD, for example. As shown in FIG. 1, a solution chamber 10, a spray nozzle 12, and a stage 14 are formed. And comprising.

The solution chamber 10 contains therein a solution 11 in which metal fine particles 16 whose particle surfaces are covered with an antioxidant film 15 are uniformly dissolved in a volatile solvent. It can be sealed with a lid on the top surface. In the solution chamber 10, an internal space S serving as a negative pressure space is formed. A pipeline 19 for supplying the solution 11 to the inside of the solution chamber 10 is connected to the upper surface of the solution chamber 10. Reference numeral V ₁ denotes an opening / closing valve provided in the middle of the pipeline 19.

A solution supply pipe 17 is connected to, for example, the bottom surface of the solution chamber 10, and a spray nozzle 12 is connected to the tip of the solution supply pipe 17. In the middle of the solution supply pipe 17, an opening / closing valve V ₂ that opens and closes the supply path to the spray nozzle 12 is provided. The spray nozzle 12 injects the solution 11 by sucking the solution 11 from the solution chamber 10 by using a negative pressure generated inside by the supply of high-pressure gas from the outside. The tip of the solution supply pipe 17 is connected to the side surface of the nozzle 12. A high pressure gas supply pipe 20 is connected to the axial center of the spray nozzle 12, and a high pressure gas is supplied from a compressor 21 provided at the rear end of the high pressure gas supply pipe 20 to the shaft core of the spray nozzle 12. Gas is supplied to generate a negative pressure inside.

  6 and 7 are sectional views showing an example of a specific structure of the spray nozzle 12. 6 is a longitudinal sectional view including a surface to which the solution supply pipe 17 is connected, and FIG. 7 is a longitudinal sectional view orthogonal to the section of FIG. In FIG. 6, a solution inlet 24 is formed on the side surface of the spray nozzle 12, and the tip of the solution supply pipe 17 is connected to the solution inlet 24. A high pressure gas inlet 25 is formed at the rear end of the axial center of the spray nozzle 12, and the tip of the high pressure gas supply pipe 20 is connected to the high pressure gas inlet 25.

  In this state, the high-pressure gas sent through the high-pressure gas supply pipe 20 by the operation of the compressor 21 shown in FIG. 1 flows into the axial center in the spray nozzle 12 from the high-pressure gas inlet 25 shown in FIG. High-speed injection is made through the small-diameter primary gas outlet 26 and enters the internal mixing chamber 27. At this time, a negative pressure is generated according to the venturi principle at the position of the solution inlet 24 to which the solution supply pipe 17 shown in FIG. 1 is connected, and the solution 11 from the solution supply pipe 17 is sucked into the internal mixing chamber 27. . The high-speed gas ejected from the primary gas ejection port crushes the solution 11 sucked from the solution feeding port 24, is mixed with the solution 11 in the widened internal mixing chamber 27, reduces the flow velocity, and jets at the nozzle tip. It is injected from the outlet 28.

  On the other hand, as shown in FIG. 7, the high-pressure gas that has flowed into the spray nozzle 12 from the high-pressure gas inlet 25 passes through the secondary gas passage 29 formed outside the axial center in the spray nozzle 12, It reaches the secondary gas ejection groove 30 formed in a spiral shape at the tip of the spray nozzle 12 and is ejected as a high-speed swirling flow. At this time, the solution 11 ejected from the ejection port 28 is crushed and atomized while being secondarily mixed, and ejected forward. 6 and 7 show an example of the spray nozzle 12 that generates and jets a swirling flow. However, the present invention is not limited to this, and a normal nozzle that does not generate a swirling flow may be used.

Further, a positive pressure supply means 22 is connected to, for example, the upper surface of the solution chamber 10 shown in FIG. 1 via an open / close valve V ₃ . The positive pressure supply means 22 supplies a positive pressure gas of an arbitrary pressure to the internal space S which is a negative pressure space formed in the solution chamber 10, and has an inertness of 1 to 2 atmospheres at the base end. It consists of a pipeline connected to a gas cylinder such as a nitrogen gas cylinder for supplying nitrogen gas (N ₂ ). A pressure controller 23 is provided between the positive pressure supply means 22 and the solution chamber 10. The pressure controller 23 serves as pressure control means for adjusting the pressure of the positive pressure gas supplied to the solution chamber 10, and controls the pressure of the nitrogen gas supplied from the nitrogen gas cylinder. An open / close valve V ₃ that opens and closes a positive pressure supply path to the solution chamber 10 is provided in the middle of the pipeline as the positive pressure supply means 22. The positive pressure supply means 22 supplies the positive pressure gas in the solution chamber 10 and the pressure controller 23 adjusts the pressure of the positive pressure gas so as to control the supply flow rate of the solution to the spray nozzle 12. It has become.

  A stage 14 is provided in the direction in which the solution 11 is ejected from the spray nozzle 12, for example, below the nozzle 28 at the tip of the nozzle. The stage 14 is for placing the wafer 13 to be coated on the placement surface 14a, and includes a heater 18 as a heating means for heating the wafer 13 placed on the placement surface 14a to a predetermined temperature. ing.

Next, the operation of the metal film forming apparatus configured as described above will be described. First, in FIG. 1, the open / close valve V ₂ in the middle of the solution supply pipe 17 connected to the bottom surface of the solution chamber 10 is closed. Next, the opening / closing valve V ₁ in the middle of the pipeline 19 is opened to supply a predetermined amount of the solution 11 into the solution chamber 10. Thereafter, the open / close valve V ₁ is closed, and the open / close valve V ₃ in the middle of the positive pressure supply means 22 is closed to make the inside of the solution chamber 10 sealed.

In this state, high-pressure gas is sent from the compressor 21 shown in FIG. 1 to the spray nozzle 12 via the high-pressure gas supply pipe 20. Then, as described above, a negative pressure (for example, 0.1 to 0.4 atm) is generated at the position of the solution inlet 24 in the spray nozzle 12 to suck the solution 11 from the solution supply pipe 17, and the jet nozzle of the spray nozzle 12. The solution 11 is sprayed from 28 (see FIGS. 6 and 7). At this time, since the internal space S of the solution chamber 10 has a negative pressure as described above, the negative pressure (P ₁ ) generated in the spray nozzle 12 and the negative pressure (P ₂ ) of the internal space S Adjust so that is equal. Here, a pressure gauge (not shown) for measuring the pressure P ₁ is attached to the solution supply pipe 17 on the downstream side of the on-off valve V _2, and a pressure gauge for measuring the pressure P ₂ in the internal space S of the solution chamber 10 ( (Not shown) may be attached.

In this state, P ₁ = P ₂ and the solution 11 does not flow, and the solution 11 stably stops in the solution supply pipe 17. Then, this state is set as the initial state of solution supply, and the solution supply process starts from here. At this time, the solution 11 stops near the solution inlet 24 in the spray nozzle 12 shown in FIG. 6, so that the path to the spray nozzle 12 does not dry. Therefore, the solution 11 can be immediately sprayed from the spray nozzle 12 thereafter.

Next, the spray nozzle 12 is set so that the jet nozzle 25 is directed toward the application object of the solution 11, that is, toward the wafer 13 placed on the placement surface 14 a of the stage 14. A high pressure gas is sent into the spray nozzle 12 through the gas supply pipe 20. However, since P ₁ = P ₂ in this state, the solution 11 is not sprayed from the spray nozzle 12. Therefore, the opening / closing valve V ₃ in the middle of the positive pressure supply means 22 shown in FIG. 1 is opened, and the pressure controller 23 is adjusted as appropriate to adjust the pressure of the positive pressure gas supplied into the solution chamber 10. Then, the pressure in the internal space S of the solution chamber 10 changes and the pressure P ₂ becomes larger than the pressure P ₁ in the spray nozzle 12, and a difference between P ₂ and P ₁ is generated. The solution 11 is supplied from the chamber 10 to the spray nozzle 12. Thus, a mist-like solution 11 is sprayed from the spray nozzle 12 and applied to the wafer 12, and a thin film of the metal fine particle solution 11 is formed on the surface of the wafer 12.

At this time, by performing fine pressure adjustment by the pressure controller 23, and the difference finely adjust the pressure P ₂ and P _1, it is possible to minutely control the supply flow rate of the solution 11 to the spray nozzles 12. For example, the flow rate of the solution 11 can be controlled at a level of about 1 ml / min, which has been impossible in the past, or at a level below that (for example, about 0.1 to 0.9 ml / min). Further, since a conventional flow rate adjusting valve such as a needle valve is not provided in the middle of the solution supply pipe 17 leading to the spray nozzle 12, foreign matter is not clogged in this portion, and the solution 11 is smoothly sprayed. It is supplied to the nozzle 12. Furthermore, even if the solution 11 has a high viscosity, the solution 11 is supplied by the negative pressure of the spray nozzle 12 and the differential pressure between the pressures P ₂ and P ₁ .

  Then, while the mist-like solution 11 is jetted from the jet nozzle 25 of the spray nozzle 12 in this way, the spray nozzle 12 is relatively moved in the X and Y two-dimensional directions with respect to the wafer 13 as shown in FIG. By moving, the mist-like solution 11 is sprayed and applied to the entire surface of the wafer 13. At this time, the mist-like solution 11 also reaches the wiring groove 13a shown in the enlarged portion P of FIG. 3, so that the metal fine particles 16 are embedded in the wiring groove 13a. When the wafer 13 is heated to a predetermined temperature by the heater 18 provided on the stage 14, as shown in FIG. 5B, the antioxidant film 15 burns and disappears, and the metal fine particles 16 are fused. It becomes. As a result, a dense copper thin film 16 ′ can be fired even on a fine portion of the surface of the wafer 13. Further, since the metal film can be formed on the surface of the object to be coated without using the electrolytic solution, the metal film does not corrode during the film formation.

  Next, although not shown, the surface of the wafer 13 on which the copper thin film is baked is subjected to CMP to remove the unnecessary copper thin film. In this manner, the metal film is completely embedded in the fine wiring groove 13a formed on the surface of the wafer 13, thereby forming a wiring pattern. Accordingly, for example, a fine wiring using a metal having high conductivity such as copper, gold, or silver as a wiring material can be formed. Thus, heat generation is suppressed and high-speed response is provided, and a highly integrated semiconductor device is provided. Is possible.

  In the above description, the solution 11 in which the metal fine particles 16 are dissolved is applied from the spray nozzle 12 to form a metal film on the surface of the wafer 13, but the present invention is not limited to this, The solution 11 may be applied toward the application target. For example, the solution 11 can be applied from the spray nozzle 12 toward a glass substrate, a non-conductive metal mirror, a filter, or various display metal films used for manufacturing an FPD.

BRIEF DESCRIPTION OF THE DRAWINGS It is a structure schematic diagram which shows embodiment of the metal film formation method and metal film formation apparatus by this invention. It is sectional drawing in which the particle | grain surface melt | dissolved in the solution sprayed from the spray nozzle of the metal film forming apparatus shown in FIG. 1 shows metal microparticles. It is a perspective view which shows the state which mounted the wafer on the stage of the metal film forming apparatus shown in FIG. It is plane explanatory drawing which shows the state which apply | coats a solution to the surface of a wafer by moving the said spray nozzle and the wafer on a stage relatively to the two-dimensional direction of X and Y. It is explanatory drawing which shows the state which the metal microparticle apply | coated to the surface of the said wafer was heated and united. It is sectional drawing which shows an example of the specific structure of the said spray nozzle. It is sectional drawing which shows an example of the specific structure of the said spray nozzle in the cross section orthogonal to the cross section shown in FIG. It is sectional drawing which shows the state by which copper was embedded in the contact hole of the surface of a wafer with the conventional method. It is sectional drawing which shows the state which the defect | deletion part generate | occur | produced in the copper embedded in the contact hole of the surface of a wafer with the conventional method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Solution chamber 11 ... Solution 12 ... Spray nozzle 13 ... Wafer 13a ... Groove 14 ... Stage 14a ... Mounting surface 15 ... Antioxidation film 16 ... Metal fine particle 17 ... Solution supply pipe 18 ... Heater 19 ... Pipeline 20 ... High pressure gas Supply pipe 21 ... Compressor 22 ... Positive pressure supply means 23 ... Pressure controller 24 ... Solution inlet 25 ... High pressure gas inlet 26 ... Primary gas outlet 27 ... Internal mixing chamber 28 ... Outlet 29 ... Secondary gas passage 30 ... Second Secondary gas ejection groove

Claims (7)

  A solution in which metal fine particles whose particle surface is covered with an anti-oxidation film is dissolved is stored in a solution chamber, and the solution in the solution chamber is sprayed from a spray nozzle toward an object to be coated. A metal film forming method, wherein a thin film is formed by applying a solution of the metal fine particles to the surface of an object to be coated by moving the object relatively in a two-dimensional direction.   The metal film forming method according to claim 1, wherein the spraying of the solution from the spray nozzle to the application target is performed in an atmospheric pressure atmosphere.   3. The method of forming a metal film according to claim 1, wherein the object to be coated is heated to a predetermined temperature to fuse the fine metal particles coated on the surface of the object to be coated. A solution chamber containing therein a solution in which metal fine particles whose particle surfaces are covered with an antioxidant film are dissolved;
A spray nozzle connected to the solution chamber by a pipe and spraying an internal solution toward an application target;
A stage that is disposed below the spray nozzle and places an application object on the upper surface;
A thin film is formed by applying the metal fine particle solution to the surface of the coating object by relatively moving the spray nozzle and the coating object placed on the stage in a two-dimensional direction. A metal film forming apparatus.   5. The metal film forming apparatus according to claim 4, wherein the stage includes heating means for heating an application object placed on the upper surface thereof to a predetermined temperature.   6. The metal film forming apparatus according to claim 4, wherein a stage on which the coating object is placed is fixed and the spray nozzle is moved in a two-dimensional direction.   6. The metal film forming apparatus according to claim 4, wherein the spray nozzle is fixed and the stage on which the application object is placed is moved in a two-dimensional direction.

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