JP2005158762A - Shell type light emitting semiconductor device - Google Patents

Shell type light emitting semiconductor device Download PDF

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JP2005158762A
JP2005158762A JP2003390406A JP2003390406A JP2005158762A JP 2005158762 A JP2005158762 A JP 2005158762A JP 2003390406 A JP2003390406 A JP 2003390406A JP 2003390406 A JP2003390406 A JP 2003390406A JP 2005158762 A JP2005158762 A JP 2005158762A
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silicone
light emitting
epoxy
emitting semiconductor
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JP4479882B2 (en
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Toshio Shiobara
利夫 塩原
Tsutomu Kashiwagi
努 柏木
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Shin Etsu Chemical Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a shell type light emitting semiconductor device which is excellent in thermal shock resistance, has good surface dust nonadhesion, and further, in a lead coming-off tension test, and can prevent generation of crack and lead coming-off. <P>SOLUTION: The shell type light emitting semiconductor device is constituted in such a manner that the light emitting element is sealed with (A)vinylgroup content ORGANO polysiloxane, (B) ORGANO hydrogen polysilane having hydrogen atom combined with two or more silicon atoms in one molecule, and (C)transparent curing object of hardenability silicon resin composite which uses platinum group metal system catalyst as inevitable component. A lead portion is sealed with cured object of epoxy-silicone hybrid resin composite which consists of epoxy resin and aluminum based catalyst. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、光取り出し部分を硬化物表面における埃付着が全くなく、かつ低弾性で耐クラック性に優れたシリコーン発光半導体被覆保護材で封止し、更にリード部をシリコーンとエポキシ樹脂からなるエポキシ・シリコーン混成樹脂組成物の硬化物で封止した砲弾型発光半導体装置に関するものである。   In the present invention, the light extraction portion is sealed with a silicone light emitting semiconductor coating protective material having no dust adhesion on the surface of the cured product, low elasticity and excellent crack resistance, and the lead portion is an epoxy made of silicone and epoxy resin. -It is related with the bullet-type light-emitting semiconductor device sealed with the hardened | cured material of the silicone hybrid resin composition.

発光ダイオード(LED)等の発光半導体装置には素子がリード電極上に配置され、その周囲を透明樹脂で覆われた砲弾型と称される図1のような発光半導体装置が使用されている。この種の発光半導体装置を低弾性のシリコーン樹脂で封止した場合、シリコーン樹脂が柔らかく、かつ強度が弱いことから、リードを引っ張ると抜けたり、シリコーンが破断するといった問題があり、シリコーン樹脂はこのタイプの半導体装置には使用されていない。   As a light emitting semiconductor device such as a light emitting diode (LED), a light emitting semiconductor device as shown in FIG. 1 is used which is called a shell type in which elements are arranged on lead electrodes and the periphery thereof is covered with a transparent resin. When this type of light-emitting semiconductor device is sealed with a low-elasticity silicone resin, the silicone resin is soft and weak, so there are problems such as pulling out the lead or breaking the silicone. It is not used in any type of semiconductor device.

なお、図1において、1は発光素子、2はダイボンド材、3,4はリード電極、5は金線であり、これらを被覆保護材で封止している。   In FIG. 1, 1 is a light emitting element, 2 is a die bond material, 3 and 4 are lead electrodes, and 5 is a gold wire, which are sealed with a covering protective material.

発光ダイオード(LED)等の発光半導体素子の被覆保護用樹脂組成物としては、その硬化体が透明性を有することが要求されており、一般にビスフェノールA型エポキシ樹脂又は脂環式エポキシ樹脂等のエポキシ樹脂と酸無水物系硬化剤を用いて得られるものが用いられている(特許文献1:特許第3241338号公報、特許文献2:特開平7−25987号公報参照)。   As a resin composition for protecting a light-emitting semiconductor element such as a light-emitting diode (LED), the cured product is required to have transparency, and is generally an epoxy such as a bisphenol A type epoxy resin or an alicyclic epoxy resin. What is obtained using resin and an acid anhydride type hardening | curing agent is used (patent document 1: patent 3241338 gazette, patent document 2: Unexamined-Japanese-Patent No. 7-25987).

しかし、かかる透明エポキシ樹脂においても、樹脂の吸水率が高いために耐湿耐久性が低い、特に短波長の光に対する光線透過性が低いために耐光耐久性が低い、あるいは光劣化により着色するという欠点を有していた。   However, even in such a transparent epoxy resin, the moisture absorption resistance of the resin is high, so the moisture resistance durability is low, particularly the light resistance to low-wavelength light is low, so the light resistance is low, or it is colored due to light deterioration. Had.

そのため、SiH基と反応性を有する炭素−炭素二重結合を一分子中に少なくとも2個含有する有機化合物、及び一分子中に少なくとも2個のSiH基を含有するケイ素化合物、ヒドロシリル化触媒からなる光半導体素子の被覆保護用樹脂組成物も提案されている(特許文献3:特開2002−327126号公報、特許文献4:特開2002−338833号公報参照)。   Therefore, it consists of an organic compound containing at least two carbon-carbon double bonds reactive with SiH groups in one molecule, a silicon compound containing at least two SiH groups in one molecule, and a hydrosilylation catalyst. Resin compositions for protecting the coating of optical semiconductor elements have also been proposed (see Patent Document 3: Japanese Patent Laid-Open No. 2002-327126, Patent Document 4: Japanese Patent Laid-Open No. 2002-338833).

しかし、このようなシリコーン系の硬化物は耐クラック性を改良しようとすると一般に硬化物表面にタックが残り、埃が容易に付着し光の透過性を損なう欠点がある。そのため、高硬度シリコーン樹脂を保護被覆用に使用したものが提案されている(特許文献5:特開2002−314139号公報、特許文献6:特開2002−314143号公報参照)。   However, in order to improve the crack resistance, such a silicone-based cured product generally has a drawback that tack remains on the surface of the cured product, and dust easily adheres and impairs light transmission. Therefore, what uses the high hardness silicone resin for protective coating is proposed (refer patent document 5: Unexamined-Japanese-Patent No. 2002-314139, patent document 6: Unexamined-Japanese-Patent No. 2002-314143).

しかし、これらの高硬度シリコーン樹脂ではまだ強度が不足しており、実用に耐えうる光発光半導体素子は製造されていない。   However, these high-hardness silicone resins still lack strength, and no light-emitting semiconductor element that can withstand practical use has been manufactured.

特許第3241338号公報Japanese Patent No. 3241338 特開平7−25987号公報JP 7-25987 A 特開2002−327126号公報JP 2002-327126 A 特開2002−338833号公報JP 2002-338833 A 特開2002−314139号公報JP 2002-314139 A 特開2002−314143号公報JP 2002-314143 A

本発明は、上記事情に鑑みなされたもので、表面タック性がなく、かつ接着性に優れ、しかも耐衝撃性、光透過性に優れたシリコーン発光半導体被覆保護材で光取り出し部分を封止し、更にリード部をシリコーン化合物とエポキシ樹脂からなるエポキシ・シリコーン混成樹脂組成物の硬化物で封止した砲弾型発光半導体装置を提供することを目的とするものである。   The present invention has been made in view of the above circumstances, and seals the light extraction portion with a silicone light emitting semiconductor coating protective material that has no surface tackiness, excellent adhesion, and excellent impact resistance and light transmission. It is another object of the present invention to provide a shell type light emitting semiconductor device in which a lead portion is sealed with a cured product of an epoxy / silicone hybrid resin composition comprising a silicone compound and an epoxy resin.

本発明者は、上記目的を達成するため鋭意検討を行った結果、
(A)ビニル基含有オルガノポリシロキサン、
(B)一分子中に2個以上のケイ素原子に結合する水素原子を有するオルガノハイドロジェンポリシロキサン、
(C)白金族金属系触媒
を必須成分とする硬化性シリコーン樹脂組成物の透明硬化物で発光素子部分を封止し、リード部分をシラノール基及び/又はアルコキシル基を含有するシリコーン化合物、エポキシ樹脂及びアルミニウム系触媒からなるエポキシ・シリコーン混成樹脂組成物の硬化物で封止することで、従来問題であったリード抜けやクラックが大幅に改善された砲弾型発光半導体装置を製造することが可能であることを見出したものである。なかでも、硬化性シリコーン樹脂組成物として、下記一般式(1)で表され、粘度が25℃で10〜1,000,000mPa・sであるオルガノポリシロキサンと、SiO2単位、R3 n4 pSiO0.5単位及びR3 q4 rSiO0.5単位からなるレジン構造のオルガノポリシロキサン(但し、上記式において、R3はビニル基又はアリル基、R4は脂肪族不飽和結合を含まない一価炭化水素基であり、nは2又は3、pは0又は1で、n+p=3、qは0又は1、rは2又は3で、q+r=3である。)の特定量とを併用することにより得られた付加反応硬化型シリコーンゴム組成物の硬化物が、表面タック性もなく、低弾性及び透明性を兼ね備え、接着性も良好で、発光半導体被覆保護材として効果的に用いられることを知見し、本発明をなすに至った。
As a result of intensive studies to achieve the above object, the present inventor,
(A) vinyl group-containing organopolysiloxane,
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to two or more silicon atoms in one molecule;
(C) A light-emitting element portion is sealed with a transparent cured product of a curable silicone resin composition containing a platinum group metal catalyst as an essential component, and the lead portion contains a silanol group and / or an alkoxyl group-containing silicone compound and epoxy resin By sealing with a cured product of an epoxy / silicone hybrid resin composition comprising an aluminum catalyst, it is possible to manufacture a shell-type light emitting semiconductor device in which lead omission and cracks, which have been problems in the past, are greatly improved. It has been found that there is. Among these, as the curable silicone resin composition, an organopolysiloxane represented by the following general formula (1) and having a viscosity of 10 to 1,000,000 mPa · s at 25 ° C., an SiO 2 unit, and R 3 n R Resin-structured organopolysiloxane composed of 4 p SiO 0.5 units and R 3 q R 4 r SiO 0.5 units (in the above formula, R 3 is a vinyl group or an allyl group, and R 4 does not contain an aliphatic unsaturated bond) A monovalent hydrocarbon group, n is 2 or 3, p is 0 or 1, n + p = 3, q is 0 or 1, r is 2 or 3, and q + r = 3). Cured product of addition reaction curable silicone rubber composition obtained by using in combination has no surface tack, has low elasticity and transparency, has good adhesion, and is used effectively as a protective material for light emitting semiconductor coatings. And the present invention It came to an eggplant.

従って、本発明は、
(A)ビニル基含有オルガノポリシロキサン、
(B)一分子中に2個以上のケイ素原子に結合する水素原子を有するオルガノハイドロジェンポリシロキサン、
(C)白金族金属系触媒
を必須成分とする硬化性シリコーン樹脂組成物の透明硬化物で発光素子部分が封止され、リード部分がシラノール基及び/又はアルコキシル基を含有するシリコーン化合物、エポキシ樹脂及びアルミニウム系触媒からなるエポキシ・シリコーン混成樹脂組成物の硬化物で封止された砲弾型発光半導体装置を提供する。
Therefore, the present invention
(A) vinyl group-containing organopolysiloxane,
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to two or more silicon atoms in one molecule;
(C) A silicone compound or epoxy resin in which a light emitting element portion is sealed with a transparent cured product of a curable silicone resin composition containing a platinum group metal catalyst as an essential component, and a lead portion contains a silanol group and / or an alkoxyl group And a bullet-type light emitting semiconductor device sealed with a cured product of an epoxy-silicone hybrid resin composition comprising an aluminum catalyst.

この場合、この砲弾型発光半導体装置は、特に下記の構成であることが好ましい。
(A’)下記一般式(1)で表され、粘度が25℃で10〜1,000,000mPa・sであるオルガノポリシロキサン、

(式中、R1は互いに同一又は異種の非置換又は置換一価炭化水素基、R2は互いに同一又は異種の脂肪族不飽和結合を有さない非置換又は置換一価炭化水素基であり、k,mは0又は正の整数であり、k+mがこのオルガノポリシロキサンの25℃の粘度を10〜1,000,000mPa・sとする数である。)
(D)SiO2単位、R3 n4 pSiO0.5単位及びR3 q4 rSiO0.5単位からなるレジン構造のオルガノポリシロキサン(但し、上記式において、R3はビニル基又はアリル基、R4は脂肪族不飽和結合を含まない一価炭化水素基であり、nは2又は3、pは0又は1で、n+p=3、qは0又は1、rは2又は3で、q+r=3である。)、
(B)一分子中に2個以上のケイ素原子に結合する水素原子を有するオルガノハイドロジェンポリシロキサン、
(C)白金族金属系触媒、
(E)下記一般式(3)

(式中、R6は、下記式(4)

で表される有機基又は脂肪族不飽和結合を含有する一価炭化水素基であるが、少なくとも1個は式(4)の有機基であり、R7は水素原子又は炭素数1〜6の一価炭化水素基、sは1〜6の整数である。)
で表されるイソシアヌレート化合物及び/又はその加水分解縮合物
を含有してなり、前記(D)成分は、前記(A)及び(D)成分の合計量に対して20〜70質量%の量で配合されているシリコーン発光半導体被覆保護材の透明硬化物で発光素子部分が封止され、リード部分がシラノール基及び/又はアルコキシル基を含有するシリコーン化合物、エポキシ樹脂及び硬化触媒からなるエポキシ・シリコーン混成樹脂組成物の硬化物で封止された砲弾型発光半導体装置。
In this case, the bullet-type light emitting semiconductor device preferably has the following configuration.
(A ′) an organopolysiloxane represented by the following general formula (1) and having a viscosity of 10 to 1,000,000 mPa · s at 25 ° C.,

(Wherein R 1 is the same or different unsubstituted or substituted monovalent hydrocarbon group, and R 2 is an unsubstituted or substituted monovalent hydrocarbon group not having the same or different aliphatic unsaturated bond. , K, m is 0 or a positive integer, and k + m is a number that makes the viscosity of this organopolysiloxane at 25 ° C. 10 to 1,000,000 mPa · s.)
(D) Organopolysiloxane having a resin structure composed of SiO 2 units, R 3 n R 4 p SiO 0.5 units and R 3 q R 4 r SiO 0.5 units (wherein R 3 is a vinyl group or an allyl group, R 4 is a monovalent hydrocarbon group not containing an aliphatic unsaturated bond, n is 2 or 3, p is 0 or 1, n + p = 3, q is 0 or 1, r is 2 or 3, q + r = 3),
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to two or more silicon atoms in one molecule;
(C) platinum group metal catalyst,
(E) The following general formula (3)

(Wherein R 6 represents the following formula (4)

Or a monovalent hydrocarbon group containing an aliphatic unsaturated bond, at least one of which is an organic group of the formula (4), and R 7 is a hydrogen atom or having 1 to 6 carbon atoms. A monovalent hydrocarbon group, s is an integer of 1-6. )
The component (D) is an amount of 20 to 70% by mass with respect to the total amount of the components (A) and (D). An epoxy silicone comprising a silicone compound containing a silanol group and / or an alkoxyl group, an epoxy resin and a curing catalyst, wherein the light emitting element portion is sealed with a transparent cured product of a silicone light emitting semiconductor coating protective material blended in A bullet-type light emitting semiconductor device sealed with a cured product of a hybrid resin composition.

本発明の砲弾型発光半導体装置は、耐熱衝撃性に優れ、また良好な表面埃非付着性を有し、更にリード引っ張り試験において、クラックの発生、リード抜けが改善されたものである。   The bullet-type light emitting semiconductor device of the present invention is excellent in thermal shock resistance, has good surface dust non-adhesiveness, and has improved crack generation and lead omission in a lead tensile test.

本発明の発光半導体を被覆保護する被覆保護材(シリコーン樹脂組成物)の(A)及び(D)成分は、本発明の被覆保護材の主成分(ベースポリマー)となる成分であり、(C)成分の触媒作用のもと(B)成分により橋かけして硬化する。   The components (A) and (D) of the coating protective material (silicone resin composition) for coating and protecting the light emitting semiconductor of the present invention are components that become the main component (base polymer) of the coating protective material of the present invention, and (C ) It is cured by crosslinking with the component (B) under the catalytic action of the component.

(A)オルガノポリシロキサン
(A)成分のビニル基含有オルガノポリシロキサンとしては、下記一般式(1)で表される各末端にケイ素原子に結合したビニル基をそれぞれ少なくとも1個有し、25℃の粘度が10〜1,000,000mPa・s、特に100〜100,000mPa・sの基本的に直鎖状のオルガノポリシロキサンであることが好ましい。なお、この直鎖状オルガノポリシロキサンは少量の分岐状構造(三官能性シロキサン単位)を分子鎖中に含有するものであってもよい。また、上記粘度は、回転粘度計(BM型)による測定値である(以下、同様)。
(A) Organopolysiloxane The vinyl group-containing organopolysiloxane (A) has at least one vinyl group bonded to a silicon atom at each end represented by the following general formula (1), and is 25 ° C. It is preferably a basically linear organopolysiloxane having a viscosity of 10 to 1,000,000 mPa · s, particularly 100 to 100,000 mPa · s. The linear organopolysiloxane may contain a small amount of a branched structure (trifunctional siloxane unit) in the molecular chain. The viscosity is a value measured with a rotational viscometer (BM type) (hereinafter the same).


(式中、R1は互いに同一又は異種の非置換又は置換一価炭化水素基、R2は互いに同一又は異種の脂肪族不飽和結合を有さない非置換又は置換一価炭化水素基であり、k,mは0又は正の整数であり、k+mがこのオルガノポリシロキサンの25℃の粘度を10〜1,000,000mPa・sとする数である。)

(Wherein R 1 is the same or different unsubstituted or substituted monovalent hydrocarbon group, and R 2 is an unsubstituted or substituted monovalent hydrocarbon group not having the same or different aliphatic unsaturated bond. , K, m is 0 or a positive integer, and k + m is a number that makes the viscosity of this organopolysiloxane at 25 ° C. 10 to 1,000,000 mPa · s.)

ここで、R1の一価炭化水素基としては、炭素数1〜10、特に1〜6のものが好ましく、具体的には、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ペンチル基、ネオペンチル基、ヘキシル基、シクロヘキシル基、オクチル基、ノニル基、デシル基等のアルキル基、フェニル基、トリル基、キシリル基、ナフチル基等のアリール基、ベンジル基、フェニルエチル基、フェニルプロピル基等のアラルキル基、ビニル基、アリル基、プロペニル基、イソプロペニル基、ブテニル基、ヘキセニル基、シクロヘキセニル基、オクテニル基等のアルケニル基や、これらの基の水素原子の一部又は全部をフッ素、臭素、塩素等のハロゲン原子、シアノ基等で置換したもの、例えばクロロメチル基、クロロプロピル基、ブロモエチル基、トリフロロプロピル基等のハロゲン置換アルキル基やシアノエチル基等が挙げられる。 Here, the monovalent hydrocarbon group for R 1 is preferably a group having 1 to 10 carbon atoms, particularly 1 to 6 carbon atoms, and specifically includes a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, and an isobutyl group. Group, alkyl group such as tert-butyl group, pentyl group, neopentyl group, hexyl group, cyclohexyl group, octyl group, nonyl group, decyl group, aryl group such as phenyl group, tolyl group, xylyl group, naphthyl group, benzyl group , Aralkyl groups such as phenylethyl group and phenylpropyl group, alkenyl groups such as vinyl group, allyl group, propenyl group, isopropenyl group, butenyl group, hexenyl group, cyclohexenyl group and octenyl group, and hydrogen atoms of these groups Are substituted with a halogen atom such as fluorine, bromine or chlorine, a cyano group, etc., such as a chloromethyl group, Roropuropiru group, bromoethyl group, and a halogen-substituted alkyl group or cyanoethyl group such trifluoropropyl group.

また、R2の一価炭化水素基としても、炭素数1〜10、特に1〜6のものが好ましく、上記R1の具体例と同様のものが例示できるが、但しアルケニル基は含まない。
k,mは、一般的には5≦k+m≦10,000を満足する0又は正の整数であり、好ましくは10≦k+m≦2,000で、0<k/(k+m)≦0.2を満足する整数である。
Further, the monovalent hydrocarbon group for R 2 is preferably one having 1 to 10 carbon atoms, particularly 1 to 6 carbon atoms, and the same examples as the specific examples for R 1 described above can be exemplified, but an alkenyl group is not included.
k and m are generally 0 or a positive integer satisfying 5 ≦ k + m ≦ 10,000, preferably 10 ≦ k + m ≦ 2,000, and 0 <k / (k + m) ≦ 0.2. A satisfying integer.

(A)成分として具体的には、下記のものを例示することができる。

(上記式において、tは8〜2,000の整数である。)
Specific examples of the component (A) include the following.

(In the above formula, t is an integer of 8 to 2,000.)


(上記式において、k,mは上述した通りである。)

(In the above formula, k and m are as described above.)

(D)レジン構造のオルガノポリシロキサン
本発明組成物の構成成分であり得るレジン構造(即ち、三次元網状構造)のオルガノポリシロキサンは、SiO2単位、R3 n4 pSiO0.5単位及びR3 q4 rSiO0.5単位からなるレジン構造のオルガノポリシロキサン(但し、上記式において、R3はビニル基又はアリル基、R4は脂肪族不飽和結合を含まない一価炭化水素基であり、nは2又は3、pは0又は1で、n+p=3、qは0又は1、rは2又は3で、q+r=3である。)である。
なお、R4の一価炭化水素基としては、上記R2と同様の炭素数1〜10、特に1〜6のものが挙げられる。
(D) Resin-structured organopolysiloxane The resin-structured (that is, three-dimensional network) organopolysiloxane that can be a constituent of the composition of the present invention comprises SiO 2 units, R 3 n R 4 p SiO 0.5 units, and R 3 q R 4 r Resin-structured organopolysiloxane composed of 0.5 units of SiO (wherein R 3 is a vinyl group or an allyl group, R 4 is a monovalent hydrocarbon group not containing an aliphatic unsaturated bond) , N is 2 or 3, p is 0 or 1, n + p = 3, q is 0 or 1, r is 2 or 3, and q + r = 3.
Examples of the monovalent hydrocarbon group for R 4 include those having 1 to 10 carbon atoms, particularly 1 to 6 carbon atoms, similar to the above R 2 .

ここで、SiO2単位をa単位、R3 n4 pSiO0.5単位をb単位、R3 q4 rSiO0.5単位をc単位とした場合、モル比として、
(b+c)/a=0.3〜3、特に0.7〜1
c/a=0.01〜1、特に0.07〜0.15
であることが好ましく、またこの(D)成分のオルガノポリシロキサンは、GPC(ゲルパーミエーションクロマトグラフィ)によるポリスチレン換算の測定法による重量平均分子量が500〜100,000、特に1,000〜10,000の範囲であるものが好適である。
Here, when the SiO 2 unit is a unit, the R 3 n R 4 p SiO 0.5 unit is b unit, and the R 3 q R 4 r SiO 0.5 unit is c unit,
(B + c) /a=0.3-3, especially 0.7-1
c / a = 0.01 to 1, especially 0.07 to 0.15
In addition, the organopolysiloxane of component (D) has a weight average molecular weight of 500 to 100,000, particularly 1,000 to 10,000, as determined by a polystyrene conversion measurement method by GPC (gel permeation chromatography). Those within the range are preferred.

なお、この(D)成分のレジン構造のオルガノポリシロキサンは、上記a単位、b単位、c単位に加えて、更に、二官能性シロキサン単位や三官能性シロキサン単位(即ち、オルガノシルセスキオキサン単位)を本発明の目的を損なわない範囲で少量含有するものであってもよい。   In addition to the a unit, b unit, and c unit, the organopolysiloxane having a resin structure as the component (D) is further difunctional siloxane unit or trifunctional siloxane unit (that is, organosilsesquioxane). (Unit) may be contained in a small amount within a range not impairing the object of the present invention.

このようなレジン構造のオルガノポリシロキサンは、各単位源となる化合物を、上記モル割合となるように組み合わせ、例えば酸の存在下で共加水分解を行うことによって容易に合成することができる。   Such an organopolysiloxane having a resin structure can be easily synthesized by combining the compounds serving as the unit sources so as to have the above molar ratio, and performing cohydrolysis in the presence of an acid, for example.

ここで、前記a単位源としては、ケイ酸ソーダ、アルキルシリケート、ポリアルキルシリケート、四塩化ケイ素等を例示することができる。   Here, examples of the a unit source include sodium silicate, alkyl silicate, polyalkyl silicate, silicon tetrachloride and the like.

また、b単位源としては、下記のものを例示することができる。
Moreover, as a b unit source, the following can be illustrated.

更に、c単位源としては、下記のものを例示することができる。
Further, examples of the c unit source include the following.

上記(D)成分のレジン構造のオルガノポリシロキサンは、硬化物の物理的強度及び表面のタック性を改善するために配合されるものであり、先にも説明した通り、前記(A)成分との合計量あたり、20〜70質量%の量で配合されることが好ましく、更に好ましくは30〜60質量%配合される。(D)成分の配合量が少なすぎると、上記効果が十分達成されず、多すぎると、組成物の粘度が著しく高くなったり、硬化物にクラックが発生し易くなるなどの不利が生ずる。   The organopolysiloxane having a resin structure as the component (D) is blended in order to improve the physical strength and the tackiness of the surface of the cured product. As described above, the component (A) It is preferable to mix | blend in the quantity of 20-70 mass% per total amount of this, More preferably, 30-60 mass% is mix | blended. When the blending amount of component (D) is too small, the above effect cannot be achieved sufficiently, and when it is too large, there are disadvantages such as the viscosity of the composition being remarkably increased and cracks being easily generated in the cured product.

(B)オルガノハイドロジェンポリシロキサン
(B)成分のオルガノハイドロジェンポリシロキサンは架橋剤として作用するものであり、該成分中のSiH基と(A)及び(D)成分中のビニル基とが付加反応することにより硬化物を形成するものである。かかるオルガノハイドロジェンポリシロキサンは、一分子中にケイ素原子に結合した水素原子(即ち、SiH基)を2個以上有するものであればいずれのものでもよいが、特に下記平均組成式(2)
a(R5bSiO(4-a-b)/2 (2)
(式中、R5は脂肪族不飽和結合を含有しない同一又は異種の非置換又は置換の一価炭化水素基であり、a及びbは、0.001≦a<2、0.7≦b≦2、かつ0.8≦a+b≦3を満たす数である。)
で表され、一分子中にケイ素原子に結合した水素原子(SiH基)を少なくとも2個、好ましくは3個以上有するものが挙げられる。
(B) Organohydrogenpolysiloxane The (B) component organohydrogenpolysiloxane acts as a crosslinking agent, and the SiH group in the component and the vinyl groups in the (A) and (D) components are added. A cured product is formed by reaction. The organohydrogenpolysiloxane may be any one as long as it has two or more hydrogen atoms (that is, SiH groups) bonded to a silicon atom in one molecule. In particular, the following average composition formula (2)
H a (R 5 ) b SiO (4-ab) / 2 (2)
Wherein R 5 is the same or different unsubstituted or substituted monovalent hydrocarbon group containing no aliphatic unsaturated bond, and a and b are 0.001 ≦ a <2, 0.7 ≦ b ≦ 2 and 0.8 ≦ a + b ≦ 3.)
And one having at least 2, preferably 3 or more hydrogen atoms (SiH groups) bonded to a silicon atom in one molecule.

ここで、上記式(2)中のR5は、脂肪族不飽和結合を含有しない同一又は異種の非置換又は置換の炭素数1〜10、特に炭素数1〜7の一価炭化水素基であることが好ましく、例えばメチル基等の低級アルキル基、フェニル基等のアリール基、前述の一般式(1)の置換基R2で例示したものが挙げられる。また、a及びbは、0.001≦a<2、0.7≦b≦2、かつ0.8≦a+b≦3を満たす数であり、好ましくは0.05≦a≦1、0.8≦b≦2、かつ1≦a+b≦2.7となる数である。ケイ素原子に結合した水素原子の位置は特に制約はなく、分子の末端でも途中でもよい。 Here, R 5 in the above formula (2) is the same or different unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, particularly 1 to 7 carbon atoms, which does not contain an aliphatic unsaturated bond. It is preferable that there are, for example, lower alkyl groups such as a methyl group, aryl groups such as a phenyl group, and those exemplified for the substituent R 2 in the above general formula (1). A and b are numbers satisfying 0.001 ≦ a <2, 0.7 ≦ b ≦ 2, and 0.8 ≦ a + b ≦ 3, preferably 0.05 ≦ a ≦ 1, 0.8 ≦ b ≦ 2 and 1 ≦ a + b ≦ 2.7. The position of the hydrogen atom bonded to the silicon atom is not particularly limited, and may be at the end of the molecule or in the middle.

上記オルガノハイドロジェンポリシロキサンとしては、1,1,3,3−テトラメチルジシロキサン、1,3,5,7−テトラメチルシクロテトラシロキサン、両末端トリメチルシロキシ基封鎖メチルハイドロジェンポリシロキサン、両末端トリメチルシロキシ基封鎖ジメチルシロキサン・メチルハイドロジェンシロキサン共重合体、両末端ジメチルハイドロジェンシロキシ基封鎖ジメチルポリシロキサン、両末端ジメチルハイドロジェンシロキシ基封鎖ジメチルシロキサン・メチルハイドロジェンシロキサン共重合体、両末端トリメチルシロキシ基封鎖メチルハイドロジェンシロキサン・ジフェニルシロキサン共重合体、両末端トリメチルシロキシ基封鎖メチルハイドロジェンシロキサン・ジフェニルシロキサン・ジメチルシロキサン共重合体、(CH32HSiO1/2単位とSiO4/2単位とから成る共重合体、(CH32HSiO1/2単位とSiO4/2単位と(C65)SiO3/2単位とから成る共重合体などが挙げられる。 Examples of the organohydrogenpolysiloxane include 1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane, trimethylsiloxy group-blocked methylhydrogenpolysiloxane, both ends Trimethylsiloxy group-blocked dimethylsiloxane / methylhydrogensiloxane copolymer, both ends dimethylhydrogensiloxy group-blocked dimethylpolysiloxane, both ends dimethylhydrogensiloxy group-blocked dimethylsiloxane / methylhydrogensiloxane copolymer, both ends trimethylsiloxy Blocked methylhydrogensiloxane / diphenylsiloxane copolymer, trimethylsiloxy group-blocked methylhydrogensiloxane / diphenylsiloxane / dimethylsiloxane copolymer on both ends Body, (CH 3) 2 HSiO copolymer comprising a 1/2 units and SiO 4/2 units, and, (CH 3) 2 HSiO 1/2 units, and SiO 4/2 units (C 6 H 5) SiO 3 Examples include copolymers composed of / 2 units.

また、下記構造で示されるような化合物も使用することができる。
Moreover, a compound as shown by the following structure can also be used.

このオルガノハイドロジェンポリシロキサンの分子構造は、直鎖状、環状、分岐状、三次元網状構造のいずれであってもよいが、一分子中のケイ素原子の数(又は重合度)は3〜1,000、特に3〜300程度のものを使用することができる。   The molecular structure of the organohydrogenpolysiloxane may be any of linear, cyclic, branched, and three-dimensional network structures, but the number of silicon atoms in one molecule (or the degree of polymerization) is 3 to 1. , Especially about 3 to 300 can be used.

このようなオルガノハイドロジェンポリシロキサンは、通常、R5SiHCl2、(R53SiCl、(R52SiCl2、(R52SiHCl(R5は、前記の通りである)のようなクロロシランを加水分解するか、加水分解して得られたシロキサンを平衡化することにより得ることができる。 Such organohydrogenpolysiloxanes are usually R 5 SiHCl 2 , (R 5 ) 3 SiCl, (R 5 ) 2 SiCl 2 , (R 5 ) 2 SiHCl (R 5 is as described above). Such chlorosilanes can be hydrolyzed or siloxanes obtained by hydrolysis can be equilibrated.

なお、このオルガノハイドロジェンポリシロキサンの配合量は、上記(A)、(D)成分の硬化有効量であり、特にそのSiH基が(A)成分及び(D)成分中のアルケニル基(例えばビニル基)の合計量あたり0.1〜4.0、特に好ましくは1.0〜3.0、更に好ましくは1.2〜2.8のモル比で使用されることが好ましい。0.1未満では硬化反応が進行せずシリコーンゴム硬化物を得ることが困難であり、4.0を超えると、未反応のSiH基が硬化物中に多量に残存するため、ゴム物性が経時的に変化する原因となる場合が生じる。   In addition, the compounding amount of the organohydrogenpolysiloxane is the effective curing amount of the above components (A) and (D), and in particular, the SiH group is an alkenyl group (for example, vinyl) in the components (A) and (D). It is preferable to use at a molar ratio of 0.1 to 4.0, particularly preferably 1.0 to 3.0, and more preferably 1.2 to 2.8 per the total amount of (base). If it is less than 0.1, the curing reaction does not proceed and it is difficult to obtain a cured silicone rubber. If it exceeds 4.0, a large amount of unreacted SiH groups remain in the cured product, so that the rubber physical properties are deteriorated over time. May cause a change.

(C)白金族金属系触媒
この触媒成分は、本発明の組成物の付加硬化反応を生じさせるために配合されるものであり、白金系、パラジウム系、ロジウム系のものがあるが、コスト等の見地から白金、白金黒、塩化白金酸などの白金系のもの、例えば、H2PtCl6・mH2O,K2PtCl6,KHPtCl6・mH2O,K2PtCl4,K2PtCl4・mH2O,PtO2・mH2O(mは、正の整数)等や、これらと、オレフィン等の炭化水素、アルコール又はビニル基含有オルガノポリシロキサンとの錯体等を例示することができ、これらは単独でも、2種以上の組み合わせでも使用することができる。これらの触媒成分の配合量は、所謂触媒量でよく、通常、前記(A)、(B)、(D)成分の合計量に対して白金族金属換算(質量)で0.1〜1,000ppm、好ましくは0.5〜200ppmの範囲で使用される。
(C) Platinum group metal-based catalyst This catalyst component is blended in order to cause the addition curing reaction of the composition of the present invention, and there are platinum-based, palladium-based and rhodium-based ones. From the viewpoint of platinum, platinum-based materials such as platinum, platinum black and chloroplatinic acid, for example, H 2 PtCl 6 · mH 2 O, K 2 PtCl 6 , KHPtCl 6 · mH 2 O, K 2 PtCl 4 , K 2 PtCl 4 Examples include mH 2 O, PtO 2 .mH 2 O (m is a positive integer), and complexes thereof with hydrocarbons such as olefins, alcohols, or vinyl group-containing organopolysiloxanes. These can be used alone or in combination of two or more. The compounding amount of these catalyst components may be a so-called catalyst amount, and is usually 0.1 to 1, in terms of platinum group metal (mass) with respect to the total amount of the components (A), (B) and (D). 000 ppm, preferably in the range of 0.5 to 200 ppm.

(E)接着助剤
本発明の被覆保護材には、これを硬化して得られる硬化物の接着性を向上させるため、ケイ素原子結合アルコキシ基を有するオルガノシラン、オルガノポリシロキサン等の有機ケイ素化合物などの接着助剤を任意成分として必要に応じて添加配合してもよい。このような有機ケイ素化合物としては、例えば、テトラメトキシシラン、テトラエトキシシラン、ジメチルジメトキシシラン、メチルフェニルジメトキシシラン、メチルフェニルジエトキシシラン、フェニルトリメトキシシラン、メチルトリメトキシシラン、メチルトリエトキシシラン、ビニルトリメトキシシラン、アリルトリメトキシシラン、アリルトリエトキシシラン、3−グリシドキシプロピルトリメトキシシラン、3−メタクリロキシプロピルトリメトキシシラン等のアルコキシシラン化合物及び一分子中にケイ素原子に結合した水素原子(SiH基)、ケイ素原子に結合したアルケニル基(例えばSi−CH=CH2基)、アルコキシシリル基(例えばトリメトキシシリル基等のトリアルコキシシリル基など)、エポキシ基(例えばグリシドキシプロピル基、3,4−エポキシシクロヘキシルエチル基)から選ばれる官能性基を少なくとも2種、好ましくは2又は3種含有する、通常、ケイ素原子数4〜30、特には4〜20程度の、直鎖状又は環状構造のシロキサン化合物(オルガノシロキサンオリゴマー)が挙げられる。
(E) Adhesion aid The coating protective material of the present invention has an organosilicon compound such as organosilane or organopolysiloxane having a silicon atom-bonded alkoxy group in order to improve the adhesion of a cured product obtained by curing the coating protective material. You may add and mix | blend adhesive adjuvants, such as such as an arbitrary component as needed. Examples of such organosilicon compounds include tetramethoxysilane, tetraethoxysilane, dimethyldimethoxysilane, methylphenyldimethoxysilane, methylphenyldiethoxysilane, phenyltrimethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, and vinyl. Alkoxysilane compounds such as trimethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and hydrogen atoms bonded to silicon atoms in one molecule ( SiH group), alkenyl groups bonded to silicon atom (e.g., Si-CH = CH 2 groups), such as trialkoxysilyl groups alkoxysilyl group (e.g., such as trimethoxysilyl group), an epoxy group (eg Glycidoxypropyl group, 3,4-epoxycyclohexylethyl group) containing at least 2, preferably 2 or 3 functional groups, usually having 4 to 30 silicon atoms, particularly about 4 to 20 And a siloxane compound (organosiloxane oligomer) having a linear or cyclic structure.

この場合、接着助剤として、下記一般式(3)で示されるオルガノオキシシリル変性イソシアヌレート化合物及び/又はその加水分解縮合物(オルガノシロキサン変性イソシアヌレート化合物)が好適に使用される。
(式中、R6は、下記式(4)
で表される有機基又は脂肪族不飽和結合を含有する一価炭化水素基であるが、少なくとも1個は式(4)の有機基であり、R7は水素原子又は炭素数1〜6の一価炭化水素基、sは1〜6、特に1〜4の整数である。)
In this case, an organooxysilyl-modified isocyanurate compound represented by the following general formula (3) and / or a hydrolysis condensate thereof (organosiloxane-modified isocyanurate compound) is preferably used as an adhesion assistant.
(Wherein R 6 represents the following formula (4)
Or a monovalent hydrocarbon group containing an aliphatic unsaturated bond, at least one of which is an organic group of the formula (4), and R 7 is a hydrogen atom or having 1 to 6 carbon atoms. A monovalent hydrocarbon group, s is an integer of 1-6, especially 1-4. )

この場合、R6の脂肪族不飽和結合を含有する一価炭化水素基としては、ビニル基、アリル基、プロペニル基、イソプロペニル基、ブテニル基、イソブテニル基、ペンテニル基、ヘキセニル基、シクロヘキセニル基等の炭素数2〜8、特に2〜6のアルケニル基が挙げられる。また、R7の一価炭化水素基としては、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ペンチル基、ヘキシル基、シクロヘキシル基等のアルキル基、ビニル基、アリル基、プロペニル基、イソプロペニル基等の上記R6として例示したものと同様のアルケニル基、フェニル基等のアリール基などの炭素数1〜8、特に1〜6の一価炭化水素基が挙げられ、好ましくはアルキル基である。 In this case, the monovalent hydrocarbon group containing an aliphatic unsaturated bond of R 6 includes vinyl group, allyl group, propenyl group, isopropenyl group, butenyl group, isobutenyl group, pentenyl group, hexenyl group, cyclohexenyl group. And alkenyl groups having 2 to 8 carbon atoms, particularly 2 to 6 carbon atoms. Examples of the monovalent hydrocarbon group for R 7 include methyl groups, ethyl groups, propyl groups, isopropyl groups, butyl groups, isobutyl groups, tert-butyl groups, pentyl groups, hexyl groups, cyclohexyl groups, and other alkyl groups, vinyl A monovalent hydrocarbon group having 1 to 8 carbon atoms, particularly 1 to 6 carbon atoms such as an alkenyl group and an aryl group such as a phenyl group, which are the same as those exemplified as R 6 such as a group, an allyl group, a propenyl group and an isopropenyl group And preferably an alkyl group.

(E)成分の接着助剤として、下記式に示される化合物が例示される。
(式中、m,nはそれぞれm+nが2〜50、好ましくは4〜20を満足する正の整数である。)
(E) As an adhesion assistant of a component, the compound shown by a following formula is illustrated.
(In the formula, m and n are each a positive integer satisfying m + n of 2 to 50, preferably 4 to 20.)

このような有機ケイ素化合物の内、得られる硬化物の接着性が特に優れている化合物としては、一分子中にケイ素原子結合アルコキシ基とアルケニル基もしくはケイ素原子結合水素原子(SiH基)を有する有機ケイ素化合物であることが好ましい。   Among such organosilicon compounds, compounds having particularly excellent adhesion of the resulting cured product include organic compounds having silicon-bonded alkoxy groups and alkenyl groups or silicon-bonded hydrogen atoms (SiH groups) in one molecule. A silicon compound is preferred.

本発明において、上記(E)成分(任意成分)の接着助剤の配合量は、(A)成分と(D)成分との合計100質量部に対して、通常10質量部以下(即ち、0〜10質量部)、好ましくは0.01〜5質量部、より好ましくは0.1〜1質量部程度配合することができる。(E)成分の配合量が少なすぎると基材に対する接着性に劣る場合があり、多すぎると硬化物の硬度が低下したり、硬化物の表面タック性に悪影響を及ぼす場合がある。   In the present invention, the blending amount of the above-mentioned (E) component (arbitrary component) adhesion assistant is usually 10 parts by mass or less (that is, 0) with respect to 100 parts by mass in total of the (A) component and the (D) component. 10 parts by mass), preferably 0.01-5 parts by mass, more preferably about 0.1-1 part by mass. When the blending amount of the component (E) is too small, the adhesion to the substrate may be inferior, and when it is too large, the hardness of the cured product may be lowered or the surface tackiness of the cured product may be adversely affected.

なお、このように接着助剤を配合することにより、得られた被覆保護材は、接着力が強いため樹脂硬化や実装時のIRリフローによる剥離を起こすことはない。また、その硬化物はデュロメータタイプAで70以上の硬さをもち、硬化物の表面に対する埃の付着もなく、低弾性特性を有することからセラミックやプラスチックの筐体との熱膨張係数の違いによる応力を吸収できるため、低温側−40℃、高温側120℃の熱衝撃試験を1,000サイクル行ってもクラックが発生することはない。   In addition, since the coating protective material obtained by blending the adhesion assistant in this way has a strong adhesive force, it does not cause peeling due to resin curing or IR reflow during mounting. Further, the cured product is durometer type A, has a hardness of 70 or more, has no adhesion of dust to the surface of the cured product, and has a low elastic property, so it depends on a difference in thermal expansion coefficient from a ceramic or plastic casing. Since stress can be absorbed, cracks do not occur even when 1,000 cycles of the thermal shock test at −40 ° C. on the low temperature side and 120 ° C. on the high temperature side are performed.

本発明のシリコーン樹脂は、(A)、(B)、(C)成分及び好ましくは(D)成分を混合し、加熱することによって容易に製造することができる。これら成分を混合すると室温でも硬化が進行するので、作業可能時間を長くするためにアセチレンアルコール系化合物、トリアゾール類、ニトリル化合物、リン化合物などの反応抑制剤を微量添加することが好ましい。また、本発明のシリコーン樹脂に波長変更するための蛍光体や酸化チタン微粉末(TiO2)などのような光散乱剤等を添加することもできる。 The silicone resin of the present invention can be easily produced by mixing and heating the components (A), (B), (C) and preferably the component (D). When these components are mixed, curing proceeds even at room temperature. Therefore, it is preferable to add a trace amount of a reaction inhibitor such as an acetylene alcohol compound, a triazole, a nitrile compound, or a phosphorus compound in order to increase the workable time. In addition, a phosphor for changing the wavelength, a light scattering agent such as fine titanium oxide powder (TiO 2 ), or the like can be added to the silicone resin of the present invention.

更に、本発明の目的を逸脱しない範囲で、ヒュームドシリカや沈降性シリカなどの補強性充填材、難燃性向上剤、有機溶剤などを添加してもよい。   Furthermore, reinforcing fillers such as fumed silica and precipitated silica, flame retardants, organic solvents and the like may be added without departing from the object of the present invention.

なお、本発明の被覆保護材は液状であることが好ましく、25℃の粘度は10〜1,000,000mPa・s、特には100〜1,000,000mPa・s程度が好ましい。   In addition, it is preferable that the coating protective material of this invention is a liquid, and the viscosity of 25 degreeC is 10-1,000,000 mPa * s, Especially about 100-1,000,000 mPa * s is preferable.

次に、リード部を保護封止するエポキシ・シリコーン混成樹脂組成物としては、下記の材料からなるものである。
(F)分子あたり少なくとも一つのケイ素原子結合水酸基(シラノール基)及び/又はケイ素原子結合アルコキシ基を有するシリコーン化合物、
(G)分子あたり平均一つ以上のエポキシ基を含有する化合物(エポキシ樹脂)、
(H)触媒量のアルミニウム化合物
を必須成分とする組成物である。
Next, the epoxy / silicone hybrid resin composition for protecting and sealing the lead portion is composed of the following materials.
(F) a silicone compound having at least one silicon atom-bonded hydroxyl group (silanol group) and / or silicon atom-bonded alkoxy group per molecule;
(G) a compound (epoxy resin) containing an average of one or more epoxy groups per molecule,
(H) A composition containing a catalytic amount of an aluminum compound as an essential component.

この場合、(F)成分の分子あたり少なくとも一つのケイ素原子結合水酸基(シラノール基)及び/又はケイ素原子結合アルコキシ基を有するシリコーン化合物としては、単一の単量体又は重合体、あるいはこれらの混合物であってもよい。これらシリコーン化合物としては、シラン、SiOSi単位を有するシリコーン化合物(即ち、オルガノ(ポリ)シロキサン)、シルカルバン(即ち、シルエチレン等のシルアルキレン単位)やシルカルバンとシロキサン単位、シルフェニレンやシルフェニレンとシロキサン単位を有するシリコーン樹脂などが使用される。   In this case, the silicone compound having at least one silicon atom-bonded hydroxyl group (silanol group) and / or silicon atom-bonded alkoxy group per molecule of the component (F) is a single monomer or polymer, or a mixture thereof. It may be. Examples of these silicone compounds include silane, a silicone compound having a SiOSi unit (that is, organo (poly) siloxane), silcarban (that is, silalkylene unit such as silethylene), silcarban and siloxane unit, silphenylene and silphenylene. A silicone resin having a siloxane unit is used.

この種のシリコーン単量体として代表的なものは(CH33SiOH、C65(CH32SiOH、(C652Si(OH)2、C65(CH3)(CH3O)SiOHなどを挙げることができる。 Typical examples of this type of silicone monomer include (CH 3 ) 3 SiOH, C 6 H 5 (CH 3 ) 2 SiOH, (C 6 H 5 ) 2 Si (OH) 2 , C 6 H 5 (CH 3 ) (CH 3 O) SiOH and the like.

シリコーン重合体としては、次のようなシロキシ単位を有するものが好適に使用される。例えば、(CH32(OH)SiO1/2、(CH32SiO、CH3(C65)(OH)SiO1/2、CH3SiO3/2、(C65)(CH3O)(CH3)SiO1/2、(C65)(OH)SiO、(CH3)(CH3O)(OH)SiO1/2などからなる重合体である。 As the silicone polymer, those having the following siloxy units are preferably used. For example, (CH 3 ) 2 (OH) SiO 1/2 , (CH 3 ) 2 SiO, CH 3 (C 6 H 5 ) (OH) SiO 1/2 , CH 3 SiO 3/2 , (C 6 H 5 ) (CH 3 O) (CH 3 ) SiO 1/2 , (C 6 H 5 ) (OH) SiO, (CH 3 ) (CH 3 O) (OH) SiO 1/2 and the like.

ケイ素原子結合水酸基やケイ素原子結合アルコキシ基はシリコーン化合物の0.01〜10質量%あれば十分である。   It is sufficient that the silicon atom-bonded hydroxyl group or the silicon atom-bonded alkoxy group is 0.01 to 10% by mass of the silicone compound.

一方、エポキシ樹脂(G)としては、分子あたり平均一つ以上のエポキシ基を有する化合物であれば如何なるものでも使用可能である。なかでもビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、水添ビスフェノールA型エポキシ樹脂、水添ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂やこれらの水添ノボラック型エポキシ樹脂、脂環式エポキシ樹脂、シクロペンタジエン型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂やこれらのフェニル基を水添したエポキシ樹脂、ビフェニル型エポキシ樹脂や水添ビフェニル型エポキシ樹脂、多官能型エポキシ樹脂、あるいは下記構造で示されるエポキシ樹脂が挙げられる。なかでも、光による劣化や着色を防止するために水添型のエポキシ樹脂や脂環式エポキシ樹脂等が好適に使用される。   On the other hand, as the epoxy resin (G), any compound having an average of one or more epoxy groups per molecule can be used. Among them, bisphenol A type epoxy resins, bisphenol F type epoxy resins, hydrogenated bisphenol A type epoxy resins, hydrogenated bisphenol F type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins and their hydrogenated novolak type epoxy resins. , Alicyclic epoxy resin, cyclopentadiene type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, epoxy resin hydrogenated with these phenyl groups, biphenyl type epoxy resin, hydrogenated biphenyl type epoxy resin, polyfunctional type epoxy Examples thereof include a resin and an epoxy resin represented by the following structure. Among these, hydrogenated epoxy resins and alicyclic epoxy resins are preferably used in order to prevent deterioration and coloring due to light.

エポキシ・シリコーン混成樹脂組成物中のエポキシ樹脂としては5〜70質量%、シリコーン化合物としては30〜95質量%であることが好ましい。特に望ましくはエポキシ樹脂が10〜50質量%、シリコーン化合物は50〜90質量%である。エポキシ樹脂が70質量%を超えると、LED発光時の温度や紫外線などで変色するおそれがある。また、5質量%未満では混成樹脂組成物の硬化物強度が不十分で、リードの抜けやクラックが発生してしまうおそれがある。エポキシ・シリコーン混成樹脂組成物の封止厚みとしては0.5〜5mm程度あれば上記不良を防ぐことができる。   The epoxy resin in the epoxy / silicone hybrid resin composition is preferably 5 to 70% by mass, and the silicone compound is preferably 30 to 95% by mass. Particularly preferably, the epoxy resin is 10 to 50% by mass, and the silicone compound is 50 to 90% by mass. If the epoxy resin exceeds 70% by mass, there is a risk of discoloration due to the temperature at the time of LED emission or ultraviolet rays. On the other hand, if it is less than 5% by mass, the strength of the cured product of the hybrid resin composition is insufficient, and there is a risk of lead removal and cracks. The above-mentioned defect can be prevented if the sealing thickness of the epoxy / silicone hybrid resin composition is about 0.5 to 5 mm.

上記エポキシ樹脂とシリコーン化合物を反応させるための硬化触媒(H)としてアルミニウム系触媒が使用される。これらの触媒として代表的なものは三水酸化アルミニウム、あるいは、アルミニウムトリエトキシド、アルミニウムトリイソプロポキシド、アルコキシアリールアルミネートなどのアルミニウムアルコラート類、アルミニウムトリアセテート、アルミニウムトリベンゾエート、アルミニウムトリステアレート、アルミニウムヒドロキシジステアレート、アルミニウムヒドロキシジアセテートなどのアルミニウムアシレート類、アルミニウムアシレートとアルコキシドの塩、ケイ素原子結合水酸基やケイ素原子結合アルコキシ基とアルミニウムアルコキシドやアルミニウムアシレートとの反応生成物やアルミノシロキシ化合物及びアルミニウムキレート類から選択される有機アルミニウム化合物が利用できる。触媒の量としてはエポキシ樹脂とシリコーン化合物との全量100質量部あたり0.05〜5質量部あれば十分である。   An aluminum-based catalyst is used as a curing catalyst (H) for reacting the epoxy resin with the silicone compound. Typical examples of these catalysts are aluminum trihydroxide, or aluminum alcoholates such as aluminum triethoxide, aluminum triisopropoxide, alkoxyaryl aluminate, aluminum triacetate, aluminum tribenzoate, aluminum tristearate, aluminum Aluminum acylates such as hydroxy distearate and aluminum hydroxy diacetate, salts of aluminum acylates and alkoxides, silicon atom-bonded hydroxyl groups, reaction products of silicon atom-bonded alkoxy groups with aluminum alkoxides and aluminum acylates, and aluminosyloxy compounds And organoaluminum compounds selected from aluminum chelates. As the amount of the catalyst, 0.05 to 5 parts by mass is sufficient per 100 parts by mass of the total amount of the epoxy resin and the silicone compound.

また、本発明で使用するエポキシ・シリコーン混成樹脂組成物を使用することで透明なシリコーン封止樹脂と界面で強固な結合が形成されることから耐湿信頼性や温度サイクルなどでの信頼性が向上する。   In addition, by using the epoxy / silicone hybrid resin composition used in the present invention, a strong bond is formed at the interface with the transparent silicone sealing resin, improving moisture resistance reliability and reliability in temperature cycle, etc. To do.

本発明の被覆保護材は、発光半導体を被覆保護するために使用される。この場合、発光半導体としては、発光ダイオード(LED)、有機電界発光素子(有機EL)、レーザーダイオード、LEDアレイ等を挙げることができる。発光半導体を被覆保護する態様は特に制限されるものではないが、砲弾型発光装置の製造方法としてはプラスチック型などに発光半導体素子を搭載したリードフレームを挿入し、透明なシリコーン樹脂組成物を流し込み硬化又は半硬化させた後、更にエポキシ・シリコーン混成樹脂組成物を流し込んで加熱硬化させることで容易に目的とする発光半導体装置を製造することができる。   The coating protective material of the present invention is used for coating protection of a light emitting semiconductor. In this case, examples of the light emitting semiconductor include a light emitting diode (LED), an organic electroluminescent element (organic EL), a laser diode, and an LED array. The mode of covering and protecting the light emitting semiconductor is not particularly limited. However, as a method for manufacturing a shell-type light emitting device, a lead frame having a light emitting semiconductor element mounted on a plastic mold or the like is inserted, and a transparent silicone resin composition is poured. After curing or semi-curing, the target light-emitting semiconductor device can be easily manufactured by pouring an epoxy-silicone hybrid resin composition and curing by heating.

図1はこれを示すもので、図1において、1は発光素子で、この発光素子1はダイボンド材2によりリード電極3に固定されていると共に、金線5によりリード電極3,4に接続されている。そして、上記発光素子1は、シリコーン樹脂組成物(シリコーン被覆保護材)の硬化物6で封止されていると共に、リード部分(リード電極3,4の下部)がエポキシ・シリコーン混成樹脂組成物の硬化物7で封止されているものである。   FIG. 1 shows this. In FIG. 1, reference numeral 1 denotes a light emitting element. The light emitting element 1 is fixed to a lead electrode 3 by a die bonding material 2 and is connected to lead electrodes 3 and 4 by a gold wire 5. ing. The light emitting element 1 is sealed with a cured product 6 of a silicone resin composition (silicone coating protective material), and the lead portion (the lower part of the lead electrodes 3 and 4) is made of an epoxy / silicone hybrid resin composition. It is sealed with a cured product 7.

なお、本発明のシリコーン樹脂被覆保護材の硬化条件は、生産性と発光素子や筐体耐熱性とのバランスから適宜選定することができるが、シリコーン樹脂組成物の硬化条件は室温から200℃でその作業条件に合わせて任意に選ぶことができる。また、リード部を封止するエポキシ・シリコーン混成樹脂組成物の硬化条件は100〜200℃、望ましくは120〜170℃の温度で硬化させることで容易に発光半導体装置を製造することができる。   The curing condition of the silicone resin coating protective material of the present invention can be appropriately selected from the balance between productivity and heat resistance of the light emitting device and the case, but the curing condition of the silicone resin composition is from room temperature to 200 ° C. It can be arbitrarily selected according to the working conditions. Further, the curing condition of the epoxy / silicone hybrid resin composition for sealing the lead portion is 100 to 200 ° C., preferably 120 to 170 ° C., whereby the light emitting semiconductor device can be easily manufactured.

以下、実施例と比較例を示し、本発明を具体的に説明するが、本発明は下記の実施例に制限されるものではない。更に、Meはメチル基、Viはビニル基を示す。なお、下記例で部は質量部を示す。   EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example. Further, Me represents a methyl group, and Vi represents a vinyl group. In addition, a part shows a mass part by the following example.

まず、実施例と比較例の被覆保護材の評価方法を示す。
[評価方法]
シリコーン系ダイボンド材の調製
下記式(I)

で表される末端ビニルジメチルシロキシ基封鎖ジメチルシロキサン・ジフェニルシロキサン共重合体(粘度3Pa・s)100部、下記式(II)
First, the evaluation method of the coating protective material of an Example and a comparative example is shown.
[Evaluation methods]
Preparation of silicone die bond material

A terminal vinyldimethylsiloxy group-capped dimethylsiloxane / diphenylsiloxane copolymer (viscosity 3 Pa · s) represented by the following formula (II):


で表されるメチルハイドロジェンポリシロキサン(粘度15mPa・s)2.5部、塩化白金酸2−エチルヘキシルアルコール変性溶液(Pt濃度2質量%)0.03部、エチニルシクロヘキシルアルコール0.05部、3−グリシドキシプロピルトリメトキシシラン7部及び平均粒径9μmの球状アルミナ微粉末400部を均一混合してシリコーンダイボンド材を調製した。

Methyl hydrogen polysiloxane (viscosity 15 mPa · s) 2.5 parts, chloroplatinic acid 2-ethylhexyl alcohol modified solution (Pt concentration 2% by mass) 0.03 parts, ethynylcyclohexyl alcohol 0.05 parts, 3 A silicone die bond material was prepared by uniformly mixing 7 parts of glycidoxypropyltrimethoxysilane and 400 parts of spherical alumina fine powder having an average particle size of 9 μm.

[シリコーン封止樹脂組成物A]
下記式

で示されるポリシロキサン(VF)50部に、SiO2単位50モル%、(CH33SiO0.5単位42.5モル%及びVi3SiO0.5単位7.5モル%からなるレジン構造のビニルメチルシロキサン(VMQ)50部、下記式

で示されるオルガノハイドロジェンポリシロキサン8部、

で示されるオルガノハイドロジェンポリシロキサン5部、

で示される接着助剤0.3部、及び、塩化白金酸のオクチルアルコール変性溶液0.05部を加え、よく撹拌し、シリコーン封止樹脂組成物Aを調製した。160℃、30分で硬化した(以下、同様)硬化物は無色透明であった。
[Silicone sealing resin composition A]
Following formula

And 50 parts by weight of polysiloxane (VF) represented by the following formula: Resin-structure vinylmethyl consisting of 50 mol% of SiO 2 units, 42.5 mol% of (CH 3 ) 3 SiO 0.5 units and 7.5 mol% of Vi 3 SiO 0.5 units 50 parts of siloxane (VMQ), following formula

8 parts of an organohydrogenpolysiloxane represented by

5 parts of an organohydrogenpolysiloxane represented by

A silicone sealing resin composition A was prepared by adding 0.3 part of an adhesion assistant represented by the above and 0.05 part of an octyl alcohol-modified solution of chloroplatinic acid and stirring well. The cured product cured at 160 ° C. for 30 minutes (hereinafter the same) was colorless and transparent.

[シリコーン封止樹脂組成物B]
VFとして下記式

を使用した以外は上記組成物Aと同じ組成にてシリコーン封止樹脂組成物Bを調製した。硬化物は無色透明であった。
[Silicone sealing resin composition B]
The following formula as VF

A silicone sealing resin composition B was prepared with the same composition as the composition A except that was used. The cured product was colorless and transparent.

[シリコーン封止樹脂組成物C]
実施例1において使用したポリシロキサン(VF)70部、VMQレジンとしてSiO2単位50モル%、(CH33SiO0.5単位42.5モル%及びVi2MeSiO0.5単位7.5モル%からなるレジン構造のビニルメチルシロキサン(VMQ)30部、下記式

で示されるオルガノハイドロジェンポリシロキサン10部を使用した以外は、上記組成物Aと同様にしてシリコーン封止樹脂組成物Cを調製した。硬化物は無色透明であった。
[Silicone sealing resin composition C]
70 parts of polysiloxane (VF) used in Example 1, 50 mol% of SiO 2 units as VMQ resin, 42.5 mol% of (CH 3 ) 3 SiO 0.5 units and 7.5 mol% of Vi 2 MeSiO 0.5 units Resin structure vinyl methylsiloxane (VMQ) 30 parts, following formula

A silicone encapsulating resin composition C was prepared in the same manner as the composition A except that 10 parts of the organohydrogenpolysiloxane represented by the formula (1) was used. The cured product was colorless and transparent.

[シリコーン封止樹脂組成物D]
下記式

で示されるポリシロキサン50部に、SiO2単位50モル%、(CH33SiO0.5単位40モル%及びVi3SiO0.5単位10モル%からなるレジン構造のビニルメチルシロキサン(VMQ)50部、下記式

で示されるオルガノハイドロジェンポリシロキサン3部、

で示されるオルガノハイドロジェンポリシロキサン5部、

で示される接着助剤0.2部、及び、塩化白金酸のオクチルアルコール変性溶液0.05部を加え、よく撹拌し、シリコーン封止樹脂組成物Dを調製した。硬化物は無色透明であった。
[Silicone sealing resin composition D]
Following formula

50 parts by weight of polysiloxane represented by the following formula: 50 parts by weight of SiO 2 units, 50 parts by weight of (CH 3 ) 3 SiO 0.5 units and 50 parts by weight of vinyl methylsiloxane (VMQ) having a resin structure consisting of 10 mol% of Vi 3 SiO 0.5 units, Following formula

3 parts of an organohydrogenpolysiloxane represented by

5 parts of an organohydrogenpolysiloxane represented by

A silicone sealing resin composition D was prepared by adding 0.2 part of an adhesion aid represented by the formula (II) and 0.05 part of an octyl alcohol-modified solution of chloroplatinic acid and stirring well. The cured product was colorless and transparent.

[エポキシ・シリコーン混成樹脂組成物A]
エポキシ樹脂として透明なビスフェノールA型エポキシ樹脂(EP828:ジャパンエポキシ(株)製)100部、フェニルメチルシリコーン樹脂(CH3SiO3/2単位、C65SiO3/2単位及びC65(CH3)SiO単位を含み5質量%の水酸基を含有する)100部、γ−グリシドキシプロピルトリメトキシシラン(KBM403:信越化学工業(株)製)2部を100℃に加熱しながら混合することで液状の組成物を作製した。これにアルミニウムベンゾエートを1.5部加え、室温で混合することで透明な硬化性エポキシ・シリコーン混成樹脂組成物Aを得た。硬化物は無色透明であった。
[Epoxy / silicone hybrid resin composition A]
100 parts of transparent bisphenol A type epoxy resin (EP828: manufactured by Japan Epoxy Co., Ltd.) as an epoxy resin, phenylmethyl silicone resin (CH 3 SiO 3/2 unit, C 6 H 5 SiO 3/2 unit and C 6 H 5 100 parts of (CH 3 ) containing SiO units and 5% by mass of hydroxyl group) and 2 parts of γ-glycidoxypropyltrimethoxysilane (KBM403: manufactured by Shin-Etsu Chemical Co., Ltd.) are heated and mixed at 100 ° C. As a result, a liquid composition was produced. To this, 1.5 parts of aluminum benzoate was added and mixed at room temperature to obtain a transparent curable epoxy / silicone hybrid resin composition A. The cured product was colorless and transparent.

[エポキシ・シリコーン混成樹脂組成物B]
エポキシ樹脂として透明な水添ビスフェノールA型エポキシ樹脂(YX8000:ジャパンエポキシ(株)製)100部、フェニルメチルシリコーン樹脂(CH3SiO3/2単位、C65SiO3/2単位及びC65(CH3)SiO単位を含み5質量%の水酸基を含有する)100部、γ−グリシドキシプロピルトリメトキシシラン(KBM403:信越化学工業(株)製)2部を100℃に加熱しながら混合することで液状の組成物を作製した。これにアルミニウムベンゾエートを1.5部加え、室温で混合することで透明な硬化性エポキシ・シリコーン混成樹脂組成物Bを得た。硬化物は無色透明であった。
[エポキシ樹脂組成物C]
エポキシ樹脂として透明なビスフェノールF型エポキシ樹脂(EP828:ジャパンエポキシ(株)製)100部、酸無水物としてメチルテトラヒドロ無水フタル酸(MH700:新日本理化(株)製)100部、γ−グリシドキシプロピルトリメトキシシラン(KBM403:信越化学工業(株)製)2部及び硬化触媒として2−フェニルイミダゾール1.5部を室温で混合することで液状の組成物を作製した。硬化物は無色透明であった。
[Epoxy / silicone hybrid resin composition B]
100 parts of transparent hydrogenated bisphenol A type epoxy resin (YX8000: manufactured by Japan Epoxy Co., Ltd.) as an epoxy resin, phenylmethyl silicone resin (CH 3 SiO 3/2 unit, C 6 H 5 SiO 3/2 unit and C 6 100 parts of H 5 (CH 3 ) SiO unit and 5% by mass of hydroxyl group) and 2 parts of γ-glycidoxypropyltrimethoxysilane (KBM403: manufactured by Shin-Etsu Chemical Co., Ltd.) were heated to 100 ° C. A liquid composition was prepared by mixing while mixing. To this, 1.5 parts of aluminum benzoate was added and mixed at room temperature to obtain a transparent curable epoxy / silicone hybrid resin composition B. The cured product was colorless and transparent.
[Epoxy resin composition C]
100 parts of transparent bisphenol F type epoxy resin (EP828: manufactured by Japan Epoxy Co., Ltd.) as an epoxy resin, 100 parts of methyltetrahydrophthalic anhydride (MH700: manufactured by Shin Nippon Rika Co., Ltd.) as an acid anhydride, γ-glycid A liquid composition was prepared by mixing 2 parts of xylpropyltrimethoxysilane (KBM403: manufactured by Shin-Etsu Chemical Co., Ltd.) and 1.5 parts of 2-phenylimidazole as a curing catalyst at room temperature. The cured product was colorless and transparent.

[実施例1]
発光素子として、InGaNからなる発光層を有し、主発光ピークが470nmのLEDチップを用いて、図1に示すような発光半導体装置を作製した。発光素子1をリード電極3にシリコーン系ダイボンド材2を用い、180℃で10分間加熱して固定した。発光素子1とリード電極3,4を金線5にて接続させた後、発光素子を搭載したリードフレームを図2(a)に示すような円筒状のケース8に設置した後、図2(b)に示すように上部から所定の高さになるまでシリコーン樹脂組成物Aをポッティングし、150℃で30分間硬化させた。その後、図2(c)に示すようにエポキシ・シリコーン混成樹脂組成物Aを更にポッティングして、180℃で1時間硬化させることで、半導体素子を作製した。
この発光半導体装置を下記方法により低温側−40℃、高温側120℃の熱衝撃試験を1,000サイクル行って外観のクラック及びシリコーン樹脂とエポキシ・シリコーン混成樹脂界面の剥離が発生した数を観察した結果、全く不良は発生しなかった。また、半導体装置表面に対する埃の付着は全く起こらなかった。更に、外部リード端子を図1で示される方向に強く引っ張った結果では全く封止材料にクラックやリード抜けは発生しなかった。
[Example 1]
A light-emitting semiconductor device as shown in FIG. 1 was manufactured using an LED chip having a light-emitting layer made of InGaN and having a main light emission peak of 470 nm as a light-emitting element. The light-emitting element 1 was fixed by heating at 180 ° C. for 10 minutes using the silicone die bond material 2 as the lead electrode 3. After the light emitting element 1 and the lead electrodes 3 and 4 are connected by the gold wire 5, the lead frame on which the light emitting element is mounted is installed in the cylindrical case 8 as shown in FIG. As shown in b), the silicone resin composition A was potted from the top to a predetermined height and cured at 150 ° C. for 30 minutes. Thereafter, as shown in FIG. 2C, the epoxy / silicone hybrid resin composition A was further potted and cured at 180 ° C. for 1 hour to produce a semiconductor element.
This light-emitting semiconductor device was subjected to 1,000 cycles of the thermal shock test on the low temperature side −40 ° C. and the high temperature side 120 ° C. by the following method to observe the number of appearance cracks and peeling between the silicone resin and the epoxy / silicone hybrid resin interface. As a result, no defect occurred. Further, no dust adhered to the surface of the semiconductor device. Further, as a result of strongly pulling the external lead terminal in the direction shown in FIG. 1, no cracks or lead omission occurred in the sealing material.

耐熱衝撃性の試験方法
作製した発光半導体装置(n=10)を、低温側−40℃、高温側120℃の熱衝撃試験を1,000サイクル行って外観のクラック及びシリコーン樹脂とエポキシ・シリコーン混成樹脂界面の剥離が発生した数を観察した。
表面埃付着性
作製した発光半導体装置に微粉末シリカをふりかけ表面に付着させた後、エアーを吹きかけることで半導体装置表面に付着した微粉末シリカを除去できるかどうか確認した。
リード引っ張り試験
作製した発光半導体装置のリードを図1に示す方向に強く手で引っ張ることで封止部にクラックやリード抜けが発生するかどうか確認した。
Thermal shock resistance test method The manufactured light-emitting semiconductor device (n = 10) was subjected to 1,000 cycles of thermal shock tests at a low temperature side of −40 ° C. and a high temperature side of 120 ° C., and appearance cracks and a mixture of silicone resin and epoxy / silicone The number of peeling at the resin interface was observed.
Surface dust adhesion The light-emitting semiconductor device produced was sprinkled with fine powder silica and adhered to the surface, and then air was blown to confirm whether the fine powder silica adhered to the surface of the semiconductor device could be removed.
Lead Tensile Test It was confirmed whether a crack or lead omission occurred in the sealing portion by pulling the lead of the light emitting semiconductor device produced by hand strongly in the direction shown in FIG.

[実施例2〜5]
下記表1に示されるシリコーン封止樹脂組成物及びエポキシ・シリコーン混成樹脂組成物を用い、実施例1と同じ条件で発光半導体装置を作製し、各種特製を評価した。
[Examples 2 to 5]
Using the silicone sealing resin composition and the epoxy / silicone hybrid resin composition shown in Table 1 below, a light emitting semiconductor device was produced under the same conditions as in Example 1, and various special products were evaluated.

[比較例1]
発光素子として、InGaNからなる発光層を有し、主発光ピークが470nmのLEDチップを用いて、図1に示すような発光半導体装置を作製した。発光素子1をリード電極3にシリコーン系ダイボンド材2を用い、180℃で10分間加熱して固定した。発光素子1とリード電極3,4を金線5にて接続させた後、発光素子を搭載したリードフレームを図2(a)に示すような円筒状のケース8に設置した後、図2(b)に示すように上部から所定の高さになるまでシリコーン樹脂組成物Aをポッティングし、150℃で30分間硬化させた。その後、図2(c)に示すようにエポキシ・シリコーン混成樹脂組成物Aを更にポッティングして、180℃で1時間硬化させることで、半導体素子を作製した。
この発光半導体装置を低温側−40℃、高温側120℃の熱衝撃試験を1,000サイクル行って外観のクラック及びシリコーン樹脂とエポキシ・シリコーン混成樹脂界面の剥離が発生した数を観察した結果、全く不良は発生しなかった。また、半導体装置表面に対する埃の付着は全く起こらなかった。更に、外部リード端子を図1で示される方向に強く引っ張った結果、硬化したシリコーン樹脂にクラックが発生し、リード抜けが起こった。
[Comparative Example 1]
A light-emitting semiconductor device as shown in FIG. 1 was manufactured using an LED chip having a light-emitting layer made of InGaN and having a main light emission peak of 470 nm as a light-emitting element. The light-emitting element 1 was fixed by heating at 180 ° C. for 10 minutes using the silicone die bond material 2 as the lead electrode 3. After the light emitting element 1 and the lead electrodes 3 and 4 are connected by the gold wire 5, the lead frame on which the light emitting element is mounted is installed in the cylindrical case 8 as shown in FIG. As shown in b), the silicone resin composition A was potted from the top to a predetermined height and cured at 150 ° C. for 30 minutes. Thereafter, as shown in FIG. 2C, the epoxy / silicone hybrid resin composition A was further potted and cured at 180 ° C. for 1 hour to produce a semiconductor element.
As a result of performing 1,000 cycles of the thermal shock test on the low temperature side −40 ° C. and the high temperature side 120 ° C. for this light emitting semiconductor device, and observing the number of appearance cracks and peeling of the silicone resin / epoxy / silicone hybrid resin interface, No defects occurred. Further, no dust adhered to the surface of the semiconductor device. Further, as a result of the external lead terminal being pulled strongly in the direction shown in FIG. 1, cracks occurred in the cured silicone resin, and lead removal occurred.

[比較例2]
発光素子として、InGaNからなる発光層を有し、主発光ピークが470nmのLEDチップを用いて、図1に示すような発光半導体装置を作製した。発光素子1をリード電極3にシリコーン系ダイボンド材2を用い、180℃で10分間加熱して固定した。発光素子1とリード電極3,4を金線5にて接続させた後、発光素子を搭載したリードフレームを図2(a)に示すような円筒状のケース8に設置した後、図2(b)に示すように上部から所定の高さになるまでシリコーン樹脂組成物Aをポッティングし、150℃で30分間硬化させた。その後、図2(c)に示すようにエポキシ・シリコーン混成樹脂組成物Aを更にポッティングして、180℃で1時間硬化させることで、半導体素子を作製した。
この発光半導体装置を低温側−40℃、高温側120℃の熱衝撃試験を1,000サイクル行って外観のクラック及びシリコーン樹脂とエポキシ・シリコーン混成樹脂界面の剥離が発生した数を観察した結果、クラックは全く発生しなかったが、シリコーン硬化物とエポキシ・シリコーン混成樹脂組成物の硬化物の界面で剥離が100%発生した。また、半導体装置表面に対する埃の付着は全く起こらなかった。更に、外部リード端子を図1で示される方向に強く引っ張った結果では全く封止材料にクラックやリード抜けは発生しなかった。
[Comparative Example 2]
A light-emitting semiconductor device as shown in FIG. 1 was manufactured using an LED chip having a light-emitting layer made of InGaN and having a main light emission peak of 470 nm as a light-emitting element. The light-emitting element 1 was fixed by heating at 180 ° C. for 10 minutes using the silicone die bond material 2 as the lead electrode 3. After the light emitting element 1 and the lead electrodes 3 and 4 are connected by the gold wire 5, the lead frame on which the light emitting element is mounted is installed in the cylindrical case 8 as shown in FIG. As shown in b), the silicone resin composition A was potted from the top to a predetermined height and cured at 150 ° C. for 30 minutes. Thereafter, as shown in FIG. 2C, the epoxy / silicone hybrid resin composition A was further potted and cured at 180 ° C. for 1 hour to produce a semiconductor element.
As a result of performing 1,000 cycles of the thermal shock test on the low temperature side −40 ° C. and the high temperature side 120 ° C. for this light emitting semiconductor device, and observing the number of appearance cracks and peeling of the silicone resin / epoxy / silicone hybrid resin interface, Although no cracks occurred, 100% peeling occurred at the interface between the cured silicone and the cured epoxy / silicone resin composition. Further, no dust adhered to the surface of the semiconductor device. Further, as a result of strongly pulling the external lead terminal in the direction shown in FIG. 1, no cracks or lead omission occurred in the sealing material.

砲弾型半導体発光装置を示す発光ダイオードの断面図である。It is sectional drawing of the light emitting diode which shows a shell-type semiconductor light-emitting device. 実施例における発光素子の封止方法を説明する概略断面図で、(a)はケース中にリードを設置した状態、(b)はシリコーン樹脂組成物を注入硬化した状態、(c)はエポキシ・シリコーン混成樹脂組成物を注入硬化した状態を示す。BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing explaining the sealing method of the light emitting element in an Example, (a) is the state which installed the lead in a case, (b) is the state which injected and hardened the silicone resin composition, (c) is epoxy * The state which injected and hardened the silicone hybrid resin composition is shown.

符号の説明Explanation of symbols

1 発光素子
2 ダイボンド材
3,4 リード電極
5 金線
6 シリコーン被覆保護材の硬化物
7 エポキシ・シリコーン混成樹脂組成物の硬化物
DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Die-bonding material 3, 4 Lead electrode 5 Gold wire 6 Hardened | cured material of a silicone coating protective material 7 Hardened | cured material of an epoxy silicone mixed resin composition

Claims (2)

(A)ビニル基含有オルガノポリシロキサン、
(B)一分子中に2個以上のケイ素原子に結合する水素原子を有するオルガノハイドロジェンポリシロキサン、
(C)白金族金属系触媒
を必須成分とする硬化性シリコーン樹脂組成物の透明硬化物で発光素子部分が封止され、リード部分がシラノール基及び/又はアルコキシル基を含有するシリコーン化合物、エポキシ樹脂及びアルミニウム系触媒からなるエポキシ・シリコーン混成樹脂組成物の硬化物で封止された砲弾型発光半導体装置。
(A) vinyl group-containing organopolysiloxane,
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to two or more silicon atoms in one molecule;
(C) A silicone compound or epoxy resin in which a light emitting element portion is sealed with a transparent cured product of a curable silicone resin composition containing a platinum group metal catalyst as an essential component, and a lead portion contains a silanol group and / or an alkoxyl group And a bullet-type light emitting semiconductor device sealed with a cured product of an epoxy / silicone hybrid resin composition comprising an aluminum catalyst.
(A’)下記一般式(1)で表され、粘度が25℃で10〜1,000,000mPa・sであるオルガノポリシロキサン、

(式中、R1は互いに同一又は異種の非置換又は置換一価炭化水素基、R2は互いに同一又は異種の脂肪族不飽和結合を有さない非置換又は置換一価炭化水素基であり、k,mは0又は正の整数であり、k+mがこのオルガノポリシロキサンの25℃の粘度を10〜1,000,000mPa・sとする数である。)
(D)SiO2単位、R3 n4 pSiO0.5単位及びR3 q4 rSiO0.5単位からなるレジン構造のオルガノポリシロキサン(但し、上記式において、R3はビニル基又はアリル基、R4は脂肪族不飽和結合を含まない一価炭化水素基であり、nは2又は3、pは0又は1で、n+p=3、qは0又は1、rは2又は3で、q+r=3である。)、
(B)一分子中に2個以上のケイ素原子に結合する水素原子を有するオルガノハイドロジェンポリシロキサン、
(C)白金族金属系触媒、
(E)下記一般式(3)

(式中、R6は、下記式(4)

で表される有機基又は脂肪族不飽和結合を含有する一価炭化水素基であるが、少なくとも1個は式(4)の有機基であり、R7は水素原子又は炭素数1〜6の一価炭化水素基、sは1〜6の整数である。)
で表されるイソシアヌレート化合物及び/又はその加水分解縮合物
を含有してなり、前記(D)成分は、前記(A)及び(D)成分の合計量に対して20〜70質量%の量で配合されている発光半導体被覆保護材の透明硬化物で発光素子部分が封止され、リード部分がシラノール基及び/又はアルコキシル基を含有するシリコーン化合物、エポキシ樹脂及び硬化触媒からなるエポキシ・シリコーン混成樹脂組成物の硬化物で封止された砲弾型発光半導体装置。
(A ′) an organopolysiloxane represented by the following general formula (1) and having a viscosity of 10 to 1,000,000 mPa · s at 25 ° C.,

(Wherein R 1 is the same or different unsubstituted or substituted monovalent hydrocarbon group, and R 2 is an unsubstituted or substituted monovalent hydrocarbon group not having the same or different aliphatic unsaturated bond. , K, m is 0 or a positive integer, and k + m is a number that makes the viscosity of this organopolysiloxane at 25 ° C. 10 to 1,000,000 mPa · s.)
(D) Organopolysiloxane having a resin structure composed of SiO 2 units, R 3 n R 4 p SiO 0.5 units and R 3 q R 4 r SiO 0.5 units (wherein R 3 is a vinyl group or an allyl group, R 4 is a monovalent hydrocarbon group not containing an aliphatic unsaturated bond, n is 2 or 3, p is 0 or 1, n + p = 3, q is 0 or 1, r is 2 or 3, q + r = 3),
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to two or more silicon atoms in one molecule;
(C) platinum group metal catalyst,
(E) The following general formula (3)

(Wherein R 6 represents the following formula (4)

Or a monovalent hydrocarbon group containing an aliphatic unsaturated bond, at least one of which is an organic group of the formula (4), and R 7 is a hydrogen atom or having 1 to 6 carbon atoms. A monovalent hydrocarbon group, s is an integer of 1-6. )
The component (D) is an amount of 20 to 70% by mass with respect to the total amount of the components (A) and (D). The light-emitting element part is sealed with a transparent cured product of the light-emitting semiconductor coating protective material blended in the above, and the lead part is an epoxy-silicone hybrid comprising a silicone compound containing a silanol group and / or an alkoxyl group, an epoxy resin and a curing catalyst. A bullet-type light emitting semiconductor device sealed with a cured product of a resin composition.
JP2003390406A 2003-11-20 2003-11-20 Cannonball type light emitting semiconductor device Expired - Fee Related JP4479882B2 (en)

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