JP2005133127A - Plasma processing apparatus and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a method therefor which enable uniformity in the distribution of electric power in a reaction vessel to be increased to realize the more uniform quality of a deposited film, and consequently realize the formation of the deposited film of excellent quality with high productivity. <P>SOLUTION: In the plasma processing apparatus in which a cylindrical substrate installed in a reaction vessel is subjected to plasma processing, a high frequency electrode and a plurality of auxiliary members different from the cylindrical substrate are installed around the cylindrical substrate within the reaction vessel, and at least a part of the auxiliary members is formed of a conductive material, and is also electrically grounded. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a plasma processing apparatus and method for processing a cylindrical substrate placed in a reaction vessel with plasma, and is particularly effective when a deposited film is formed on a cylindrical substrate by plasma CVD. The present invention relates to an apparatus and a method.

One method of forming a deposited film is a plasma CVD method using discharge energy. An amorphous thin film (for example, amorphous silicon compensated by hydrogen or / and halogen) formed by this method is used for an electrophotographic photoreceptor, a semiconductor. Applications to semiconductor elements such as devices and TFTs have been proposed, and some of them have been put to practical use. In particular, the plasma CVD method using RF power in the RF band of 13.56 MHz is widely used because the substrate material, the deposited film material, etc. can be processed regardless of the conductor or insulator, and the handling is relatively easy. ing. In recent years, the plasma CVD method using high-frequency power in the VHF band has attracted attention, and development of various deposited film forming methods using this method has been actively promoted. This is because in the VHF-PCVD method, the film deposition rate is high and a high-quality deposited film can be obtained, so that it is expected that the cost reduction and the quality improvement of the product can be achieved at the same time. (For example, see Patent Document 1)
FIG. 3A is a schematic configuration diagram showing a typical example of a conventional electrophotographic photoreceptor manufacturing apparatus using the VHF-PCVD method. FIG. 3A is a schematic cross-sectional view of the manufacturing apparatus as viewed from the side, and FIG. 3B is a schematic cross-sectional view as viewed from right above the cutting line XX ′ of FIG. 3A.

  In the apparatus shown in FIG. 3, a lower substrate support means (102) that can be rotated by a rotation mechanism (not shown) is installed at the center of the reaction vessel (101), and the lower substrate support means (102) and the substrate cap (103) are arranged. ) To fix the cylindrical substrate (104) so as to enclose the substrate heater (105). Further, a plurality of high-frequency electrodes (106) and source gas introduction means (107) are installed on the circumference with the cylindrical base (104) as the central axis.

By using the above manufacturing apparatus, a high-quality deposited film can be obtained even at a high deposition film forming speed by the VHF-PCVD method, and the cost and quality of the product can be reduced.
JP 06-287760 (page 17, Fig. 1) JP-A-10-183354 (page 19, FIG. 1)

  However, the above-described manufacturing apparatus has room for further improvement in improving the quality of the deposited film to be formed or realizing a deposited film with higher productivity. One of the causes is that the plasma distribution in the reaction vessel becomes non-uniform.

  In the manufacturing apparatus shown in FIG. 3, high-frequency power is introduced into the reaction vessel from a high-frequency electrode disposed around the cylindrical substrate.

  In order to make the plasma distribution in the reaction vessel as uniform as possible, the high-frequency electrodes are arranged at equal intervals on the circumference with the cylindrical substrate as the central axis.

  However, when looking at the plasma distribution in the horizontal plane inside the reaction vessel centering on the cylindrical substrate, the plasma characteristics differ between the direction facing the high-frequency electrode and the other direction, and as a result, the deposition formed on the cylindrical substrate. The film quality will be uneven.

  In the past, for such problems, unevenness in quality has been suppressed by rotating the cylindrical substrate during the formation of the deposited film.

  However, since the deposited film formed in this way is composed of a stack of non-uniform quality deposited films, the deposited film in the lower quality part has an adverse effect, and the quality of the deposited film as a whole is further improved. May not be easy. Particularly in recent years, the level of quality required for electrophotographic photoreceptors is increasing, and there are cases where conventional methods cannot cope with them.

  For this problem, it is possible to increase the quality of the deposited film formed on the cylindrical substrate portion not facing the electrode by increasing the high-frequency power value to be introduced. Excessive electric power may be introduced into the space where it is easily introduced, and on the contrary, the deposited film to be formed may be damaged, resulting in deterioration of quality and further film peeling.

  Further, in order to realize the uniform plasma, an apparatus configuration in which the number of high-frequency electrodes is increased or a rod-shaped high-frequency electrode as shown in FIG. 3 is not used, but as shown in FIG. An apparatus configuration in which high-frequency power is applied to the outer wall itself and the outer wall of the reaction vessel is used as a high-frequency electrode is conceivable. However, when high-frequency power in the VHF band is used, if the surface area of the electrode becomes too large, When electric power propagates, the intensity is attenuated, and the plasma distribution may be uneven.

  In addition, by installing an electrically floating auxiliary member at least partially made of a conductive material in the reaction vessel at a position where the plasma intensity is weak, a part of the high-frequency power introduced into the reaction vessel is reduced. There has also been proposed a configuration that propagates to the auxiliary member and has a function similar to that of a high-frequency electrode to which power is directly applied (see Patent Document 2). By adopting such a device configuration, plasma non-uniformity is proposed. Is greatly improved. However, when an electrically floating auxiliary member is installed in the reaction space in this way, the reason is not clear, but depending on the deposition film formation conditions, it may not be easy to maintain a stable discharge for a long time. It was.

[Object of the invention]
Therefore, the object of the present invention is to overcome the conventional problems as described above, to improve the uniformity of plasma in the reaction vessel, to make the quality of the deposited film formed more uniform, and as a result, to deposit excellent quality. An object of the present invention is to provide a plasma processing apparatus capable of forming a film with high productivity.

  As a result of intensive studies to achieve the above object, the present inventors have found that when using high-frequency power near the VHF band, even if the auxiliary member installed in the reaction vessel is electrically grounded, It has been found that high-frequency power propagates through the auxiliary member, and as a result, it is possible to have a function of radiating high-frequency power to the surrounding space in the same manner as a high-frequency electrode to which power is directly applied. Furthermore, the auxiliary member was found to be able to maintain a stable discharge for a long time by being electrically grounded, and the present invention was completed. That is, the plasma processing apparatus of the present invention includes a high-frequency power source, a high-frequency electrode to which a high-frequency power output from the high-frequency power source is applied, and performs plasma processing on a cylindrical substrate installed in a reaction vessel. A plurality of auxiliary members different from the high-frequency electrode and the cylindrical substrate are provided around the cylindrical substrate in the reaction vessel, and the auxiliary member is at least partially formed of a conductive material; and It is characterized by being electrically grounded.

  In the present invention, it is possible to maintain a stable discharge for a long time by electrically grounding the auxiliary member, but the reason is not clear but is considered as follows. If the auxiliary member is installed in the plasma space in an electrically floating state and the plasma treatment is continued for a long time, the surface potential may be unstable due to accumulation of charge in the auxiliary member depending on the deposition film formation conditions. The discharge may become unstable, but by electrically grounding the auxiliary member, such charge accumulation can be prevented and stable discharge can be maintained for a long time. thinking.

  In addition, when a semiconductor film such as an a-Si film is formed in a state where the auxiliary member is placed in the plasma space in an electrically floating state, the auxiliary member is placed in an electrically floating state as the deposited film is formed. A deposited film is also formed on the surface of the insulating part, so that the conductivity of the insulating part changes, and the propagation state of high-frequency power to the auxiliary member may change during the formation of the deposited film. It is considered that such a change in the propagation state of high-frequency power can be suppressed by electrically grounding and that stable discharge can be maintained for a long time.

  Next, an example of the deposited film forming method according to the present invention, which is performed using the apparatus shown in FIG. 1, will be described in detail below.

After the cylindrical substrate (104) is installed in the reaction vessel (101), the inside of the reaction vessel (101) is evacuated using an exhaust device (for example, a vacuum pump). After sufficiently evacuating the inside of the reaction vessel (101), it is required for heating that is supplied from a gas cylinder (not shown) such as He, N ₂ , Ar and H2 in a gas supply device (not shown). The gas is adjusted to an appropriate flow rate via a pressure regulator (not shown), a mass flow controller (not shown), and the like, and a reaction vessel (via a gas pipe (108) and a source gas introduction means (107)). 101). The pressure in the reaction vessel (101) after the introduction of the heating gas is monitored by the pressure measuring means (109) and is controlled to a predetermined value by adjusting the opening of the throttle valve (110). When the predetermined substrate heating environment is prepared, the cylindrical substrate (104) is indirectly heated to a predetermined temperature by the substrate heater (105).

After completion of the predetermined heating, it is necessary to be supplied from a gas cylinder (not shown) such as SiH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , PH ₃ etc. in a gas supply device (not shown). The deposition film forming gas is adjusted to an appropriate flow rate via a pressure regulator (not shown), a mass flow controller (not shown), etc., and is passed through a gas pipe (108) and a raw material gas introduction means (107). Into the reaction vessel (101). The internal pressure of the reaction vessel (101) after introducing the deposition film forming gas is monitored by the pressure measuring means (109), and is controlled to a predetermined value by adjusting the opening of the throttle valve (110). When a predetermined deposition film forming environment is prepared, the high frequency power output from the high frequency power source (111) passes through the matching circuit (112) and then is electrically grounded in the power dividing container (113). To be introduced. Thereafter, the high frequency power is divided into a plurality of conductor lines (115) in the power dividing section (114) in the power dividing container (113), and via the high frequency electrode (106) installed in the reaction container (101), It is introduced into the reaction vessel (101) to generate plasma. The deposited film forming gas is decomposed by the plasma to form a deposited film on the cylindrical substrate (104). At this time, a part of the high-frequency power introduced into the reaction vessel (101) propagates to the electrically grounded auxiliary member (116), and the auxiliary member (116) surrounds the propagated high-frequency power around. By radiating into the space, it is possible to increase the intensity of the plasma generated in the surrounding space and to achieve uniform plasma.

  Further, in the present invention, since the high-frequency electrode (106) and the plurality of auxiliary members (116) are substantially parallel to the cylindrical substrate, it is possible to obtain a more uniform plasma and sufficiently obtain the effects of the present invention. More preferred.

  Further, in the present invention, as shown in FIG. 2, the high-frequency electrode (106) is disposed outside the reaction vessel (201) at least partially made of a dielectric material, so that a more uniform plasma can be obtained. It is possible to obtain the above effect, and the effect of the present case can be sufficiently obtained, which is more preferable. The reason is not clear, but since the high-frequency electrode (106) is installed outside the discharge space, the direct contribution to the plasma is reduced, and the high-frequency power is partially increased in the discharge space. I think that this is because the space is reduced.

  The material of the conductive portion of the auxiliary member (116) in the present invention is not particularly limited, but is preferably a material that can withstand use in a certain high temperature and plasma. For example, Al, Ti, Examples thereof include metals such as Cr, Fe, Ni and Cu, and alloys such as stainless steel.

  In the present invention, the distance between the surface of the auxiliary member (116) and the surface of the cylindrical substrate (104) is preferably 20 mm or more and 100 mm or less. If the distance between the surface of the auxiliary member (116) and the surface of the cylindrical substrate (104) is 20 mm or less, plasma may not be generated between the auxiliary member (116) and the cylindrical substrate (104) depending on the plasma processing conditions. This is because the effects of the present invention may not be sufficiently obtained. Further, when the distance between the surface of the auxiliary member (116) and the surface of the cylindrical substrate (104) is 100 mm or more, the high frequency power radiated from the auxiliary member (116) may be increased depending on the plasma processing conditions. This is because there is a case where the effect of the present invention cannot be sufficiently obtained.

  In the present invention, the effect of the present invention can be obtained more remarkably by adopting a configuration in which the conductive portions of the auxiliary member (116) face each other over the entire length of the cylindrical base body (104). Here, the configuration in which the conductive portions of the auxiliary member (116) face each other over the entire length of the cylindrical substrate (104) is a case where the portion L shown in FIG. 5A is conductive, as shown in FIG. 5B. This configuration is not included.

  In the present invention, the high frequency power frequency used is effective in the range of 20 MHz to 250 MHz. The reason is not clear, but it is considered that when the frequency of the high frequency power is smaller than 20 MHz, sufficient high frequency power does not propagate to the auxiliary member, and the effects of the present invention may not be sufficiently obtained. Yes. In addition, when the frequency of the high frequency power is higher than 250 MHz, the high frequency power is significantly attenuated when propagating through the high frequency electrode or the auxiliary member, and it may be difficult to realize uniform plasma. thinking.

(Example)
Hereinafter, the deposited film forming apparatus and method of the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

(Example 1)
In the plasma processing apparatus shown in FIG. 1, a high frequency power source (111) having an oscillation frequency of 105 MHz is used, and under the conditions shown in Table 1, a cylindrical aluminum cylinder having a diameter of 80 [mm] and a length of 358 [mm] ( 104) A charge injection blocking layer, a photoconductive layer and a surface layer were deposited thereon to produce an electrophotographic photoreceptor.

  In this example, an aluminum columnar member having a diameter of 30 [mm] and a length of 500 [mm] was used as the auxiliary member (116).

  In this example, the plasma treatment was performed while the cylindrical aluminum cylinder (104) was stationary.

(Comparative Example 1)
In this example, an electrophotographic photosensitive member was produced on a cylindrical aluminum cylinder (104) under the same conditions as in Example 1 using the plasma processing apparatus shown in FIG.
In this example, the auxiliary member (116) used in Example 1 is not used.
In this example as well, the plasma treatment was performed with the cylindrical aluminum cylinder (104) stationary.

(Evaluation of Example 1 and Comparative Example 1)
The electrophotographic characteristics of the electrophotographic photoreceptors produced in Example 1 and Comparative Example 1 were evaluated by the methods described below, and the electrophotographic photoreceptors produced in Example 1 and Comparative Example 1 were produced. And compared.

"Electrophotographic characteristic evaluation method"
Each created electrophotographic photosensitive member is installed in a Canon copying machine iR-5000 modified for this test, and the evaluation item is “residual potential circumferential unevenness”. Evaluation was performed.

"Residual potential circumferential unevenness"
After adjusting the current value of the main charger so that the average value of the dark portion potential in the circumferential direction at the developing unit position becomes a predetermined value, the image is irradiated with a predetermined amount of light, and the developing unit position at that time Measure the surface potential at and set the value as the “residual potential”. At the position in the axial direction of the electrophotographic photosensitive member produced in Example 1 and Comparative Example 1, the “residual potential” was measured in 10 ° increments in the circumferential direction with the A direction shown in FIGS. 1 and 3 as the 0 ° direction. A value obtained by dividing each value by the minimum value is used as an evaluation guideline for “circumference unevenness”. Therefore, the smaller the value is and the closer to 1, the better the “circumference unevenness”.

  The results of Example 1 and Comparative Example 1 are shown in FIGS. 6 and 7, respectively. In FIG. 6, large unevenness is not observed in the circumferential direction, but in FIG. 7, large unevenness is observed with a period of 120 ° in the circumferential direction. When the result of FIG. 7 is compared with the apparatus configuration in FIG. 3, the arrangement of the electrodes and the period of unevenness match, and the portion that does not face the electrode has a larger “residual potential” than the portion that faces the electrode. As shown in FIG. 1, it is understood that “residual potential circumferential unevenness” is significantly improved by installing the auxiliary member (116).

(Example 2)
In the plasma processing apparatus shown in FIG. 1, a high-frequency power source (111) having an oscillation frequency of 105 MHz is used, and instead of the conditions shown in Table 1 used in Example 1, the diameter of 80 [ A charge injection blocking layer, a photoconductive layer and a surface layer were deposited on a cylindrical aluminum cylinder (104) having a length of mm] and a length of 358 [mm] to produce an electrophotographic photoreceptor.

  In this example, an aluminum columnar member having a diameter of 30 [mm] and a length of 500 [mm] was used as the auxiliary member (116).

  In this example, the plasma treatment was performed while the cylindrical aluminum cylinder (104) was rotated.

(Comparative Example 2)
In this example, an electrophotographic photosensitive member was produced on a cylindrical aluminum cylinder (104) under the same conditions as in Example 2 using the plasma processing apparatus shown in FIG.

  In this example as well, the plasma treatment was performed with the cylindrical aluminum cylinder (104) rotated.

(Comparative Example 3)
In this example, in the plasma processing apparatus shown in FIG. 1, the auxiliary member (116) is installed in an electrically floating state, and on the cylindrical aluminum cylinder (104) under the same conditions as in the second embodiment, A photographic photoreceptor was prepared.

  In this example as well, the plasma treatment was performed with the cylindrical aluminum cylinder (104) rotated.

(Evaluation of Example 2, Comparative Example 2 and Comparative Example 3)
The electrophotographic characteristics of the electrophotographic photoreceptors produced in Example 2, Comparative Example 2 and Comparative Example 3 were evaluated by the methods described below, and the electrophotographic photoreceptor produced in Example 2 and Comparative Examples 2 and Comparative Examples were evaluated. Comparison with the electrophotographic photosensitive member prepared in 3 was performed.

"Electrophotographic characteristic evaluation method"
Each created electrophotographic photosensitive member is installed in a Canon copier iR-5000 modified for this test, and the evaluation items are “sensitivity” and “optical memory”. Items were evaluated.

"sensitivity"
After adjusting the current value of the main charger so that the dark portion potential at the developing unit position becomes a predetermined value, image exposure is performed. Next, the light quantity of the image exposure light source is adjusted so that the surface potential at the developing device position becomes a predetermined value, and the exposure amount at that time is measured. The exposure amount at the middle position in the axial direction of the electrophotographic photosensitive member produced in Example 2, Comparative Example 2 and Comparative Example 3 is measured, and the value is defined as “sensitivity”. Therefore, the smaller the value, the better.

  “Sensitivity” was measured for each of Example 2, Comparative Example 2 and Comparative Example 3, and each was compared with Comparative Example 2. The value of Comparative Example 2 was set as 100%, and was classified into the following ranks.

A Less than 90% compared with Comparative Example 2 B 90% or more but less than 100% compared with Comparative Example 2 C 100% or more less than 110% compared with Comparative Example 2 D 110% or more compared with Comparative Example 2 "Optical memory"
After adjusting the current value of the main charger so that the dark portion potential at the developing unit position becomes a predetermined value, image exposure is performed. The light amount of the image exposure light source is adjusted so that the surface potential at the developing device position of the electrophotographic photosensitive member becomes a predetermined value. Under this image exposure condition, the surface potential in the non-exposure state at the developing unit position and the surface potential when recharged after being exposed once are measured, the potential difference between them is calculated, and the value is calculated as “optical memory”. And Therefore, the smaller the value, the better.

  “Sensitivity” was measured for each of Example 2, Comparative Example 2 and Comparative Example 3, and each was compared with Comparative Example 2. The value of Comparative Example 2 was set as 100%, and was classified into the following ranks.

A Compared with Comparative Example 2 Less than 80% B Compared with Comparative Example 2 80% or more and less than 100% C Compared with Comparative Example 2 100% or more and less than 120% D Compared with Comparative Example 2 120% or more The results are shown in Table 3.

  As is apparent from Table 3, it can be seen that an electrophotographic photosensitive member of excellent quality can be produced by implementing the plasma processing apparatus and method of the present invention.

(Example 3)
Twenty electrophotographic photoreceptors were prepared using the same apparatus and conditions as in Example 2.

(Comparative Example 4)
Twenty electrophotographic photosensitive members were prepared using the same apparatus and conditions as in Comparative Example 3.

(Evaluation of Example 3 and Comparative Example 4)
The electrophotographic characteristics of the electrophotographic photoreceptors produced in Example 3 and Comparative Example 4 were evaluated by the methods described below, and the electrophotographic photoreceptor produced in Example 3 and the electrophotographic photoreceptor produced in Comparative Example 4 were used. And compared.

"Electrophotographic characteristic evaluation method"
Each created electrophotographic photosensitive member is installed in a Canon copier iR-5000 modified for this test, and the evaluation items are “sensitivity variation” and “optical memory variation”. The evaluation of each item was performed.

"Sensitivity variation"
The “sensitivity” of each of the 20 electrophotographic photosensitive members produced in Example 3 and Comparative Example 4 at the middle position in the axial direction is measured. The difference between the maximum value and the minimum value with respect to the average value of “sensitivity” of the 20 electrophotographic photosensitive members is evaluated as “sensitivity variation”. Therefore, the smaller the value, the better. Example 3 was compared with Comparative Example 4, and the value of Comparative Example 4 was set to 100%, and was classified into the following ranks.

A Compared with Comparative Example 4 Less than 80% B Compared with Comparative Example 4 80% or more and less than 100% C Compared with Comparative Example 4 100% or more and less than 120% D Compared with Comparative Example 4 120% or more "Optical memory variation"
The “optical memory” at the middle position in the axial direction of each of the 20 electrophotographic photosensitive members produced in Example 3 and Comparative Example 4 is measured. The difference between the maximum value and the minimum value with respect to the average value of the “optical memory” of the 20 electrophotographic photosensitive members is evaluated as “optical memory variation”. Therefore, the smaller the value, the better. Example 3 was compared with Comparative Example 4, and the value of Comparative Example 4 was set to 100%, and was classified into the following ranks.

A Compared with Comparative Example 4 Less than 80% B Compared with Comparative Example 4 80% or more and less than 100% C Compared with Comparative Example 4 100% or more and less than 120% D Compared with Comparative Example 4 120% or more

  As is apparent from Table 4, it can be seen that by implementing the deposited film forming apparatus and method of the present invention, an electrophotographic photosensitive member of excellent quality can be produced with good reproducibility.

Example 4
In this example, instead of the plasma processing apparatus shown in FIG. 1 used in the third embodiment, the plasma processing apparatus shown in FIG. 2 is used. Under the conditions shown in Table 5, the diameter is 80 [mm] and the length is 358. A charge injection blocking layer, a photoconductive layer and a surface layer were deposited on a [mm] cylindrical aluminum cylinder (104) to produce an electrophotographic photoreceptor.

  In this example, the plasma treatment was performed while the cylindrical aluminum cylinder (104) was rotated.

  When the produced electrophotographic photoreceptor was evaluated in the same manner as in Example 2 and Example 3, the same characteristics as in Examples 2 and 3 were obtained, and an excellent quality electrophotographic photoreceptor was produced with good reproducibility. We were able to.

(Example 5)
This example uses the plasma processing apparatus used in Example 2, and the distance between the surface of the auxiliary member (116) and the surface of the cylindrical aluminum cylinder (104) is (a) 10 mm, (b) 20 mm, (c) An electrophotographic photosensitive member was produced under the same conditions as in Example 2 with 50 mm, (d) 100 mm, and (e) 120 mm.

  The “sensitivity” and “optical memory” of the electrophotographic photosensitive member produced in (a) to (e) of Example 5 were evaluated by the method described in Example 2, and the value of Example 5 (B) was set to 100. It was divided into the following ranks as%.

A Less than 90% compared to Example 5 (B) B 90% or more and less than 100% compared to Example 5 (B) C 100% or more and less than 110% compared to Example 5 (B) D Implementation 110% or more compared with Example 5 (b). The results are shown in Table 6.

  As is clear from Table 6, an excellent quality electrophotographic photosensitive member can be produced by setting the distance between the surface of the auxiliary member (116) and the surface of the cylindrical aluminum cylinder (104) to 20 mm or more and 100 mm or less. did it.

(Example 6)
Also in this example, the plasma processing apparatus used in Example 2 is used, and as shown in FIG. 5A, the conductive portion of the auxiliary member (116) faces the entire length of the cylindrical aluminum cylinder (104). (I.e., portion L in the drawing is conductive) (b) As shown in FIG. 5B, a part (α portion in the drawing) of the cylindrical aluminum cylinder (104) does not face the auxiliary member (116). Thus, an electrophotographic photosensitive member was produced under the same conditions as in Example 2.

  Using the method described in Example 2, the “sensitivity” and “optical memory” of the electrophotographic photosensitive member produced in (a) and (b) of Example 6 are evaluated. However, the measurement position was different from that of Example 2, and the central position of the range indicated by α in FIG. 5B was evaluated, and the value of Example 6 (b) was set as 100% and classified into the following ranks.

A Less than 90% compared to Example 6 (B) B 90% or more and less than 100% compared to Example 6 (B) C 100% or more and less than 110% compared to Example 6 (B) D Implementation 110% or more compared to Example 6 (b)

  As can be seen from Table 7, the electrophotographic photosensitive member of excellent quality could be produced because the conductive portions of the auxiliary member (116) face each other over the entire length of the cylindrical aluminum cylinder (104).

It is an example of the deposited film formation apparatus in this invention, and is typical explanatory drawing of the manufacturing apparatus of the electrophotographic photoreceptor by plasma CVD method. It is an example of the deposited film formation apparatus in this invention, and is typical explanatory drawing of the manufacturing apparatus of the electrophotographic photoreceptor by plasma CVD method. It is an example of the conventional deposited film forming apparatus, and is a schematic explanatory view of an electrophotographic photoreceptor manufacturing apparatus by plasma CVD. It is an example of the conventional deposited film forming apparatus, and is a schematic explanatory view of an electrophotographic photoreceptor manufacturing apparatus by plasma CVD. It is an example of the deposited film formation apparatus in this invention, and is typical explanatory drawing which shows the positional relationship of a cylindrical base | substrate and an auxiliary member. 3 is a graph showing the evaluation results of the electrophotographic photosensitive member produced in Example 1. 6 is a graph showing the evaluation results of the electrophotographic photosensitive member produced in Comparative Example 1.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Reaction container 102 Base lower part support means 103 Base cap 104 Cylindrical base body 105 Substrate heater 106 High frequency electrode 107 Raw material gas introduction means 108 Gas piping 109 Pressure measurement means 110 Throttle valve 111 High frequency power supply 112 Matching circuit 113 Power division container 114 Power division Part 115 Conductor line 116 Auxiliary member 201 Reaction vessel at least partially made of a dielectric

Claims (12)

  A plasma processing apparatus comprising a high-frequency power source, a high-frequency electrode to which a high-frequency power output from the high-frequency power source is applied, and performing a plasma treatment on a cylindrical substrate installed in the reaction vessel, wherein the cylindrical substrate in the reaction vessel A plurality of auxiliary members different from the high-frequency electrode and the cylindrical substrate are provided around the auxiliary member, and the auxiliary member is formed of a conductive material and is electrically grounded. A plasma processing apparatus.   The plasma processing apparatus according to claim 1, wherein the high-frequency electrode and the plurality of auxiliary members are substantially parallel to the cylindrical substrate.   3. The plasma processing apparatus according to claim 1, wherein the high-frequency electrode is installed outside the reaction vessel at least a part of which is made of a dielectric.   The plasma processing apparatus according to claim 1, wherein a distance between the auxiliary member surface and the cylindrical substrate surface is 20 mm or more and 100 mm or less.   The plasma processing apparatus according to claim 1, wherein the conductive portions of the auxiliary member face each other over the entire length of the cylindrical substrate.   The plasma processing apparatus according to claim 1, wherein the frequency of the high-frequency power is 20 MHz or more and 250 MHz or less.   In a plasma processing method of generating plasma in a reaction vessel by supplying high-frequency power output from a high-frequency power source to a high-frequency electrode, and performing plasma treatment on a plurality of cylindrical substrates installed in the reaction vessel A plurality of auxiliary members different from the high-frequency electrode and the cylindrical substrate are provided around the cylindrical substrate in the reaction vessel, and the auxiliary member is formed of a conductive material at least partially, and is electrically A plasma processing method characterized in that it is grounded.   The plasma processing method according to claim 7, wherein the high-frequency electrode and the plurality of auxiliary members are installed substantially parallel to the cylindrical substrate.   9. The plasma processing method according to claim 7, wherein the high-frequency electrode is installed outside the reaction vessel at least partly made of a dielectric.   The plasma processing method according to claim 7, wherein a distance between the auxiliary member surface and the cylindrical substrate surface is set to a distance of 20 mm to 100 mm.   The plasma processing method according to claim 7, wherein the conductive portions of the auxiliary member face each other over the entire length of the cylindrical substrate. The plasma processing method according to claim 7, wherein a frequency of the high-frequency power is 20 MHz to 250 MHz.

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