JP2003213431A - Vacuum processor and vacuum processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum processor and a processing method that can realize uniform processing between a plurality of substrates by more evenly supplying electric power to a plurality of high frequency electrodes. <P>SOLUTION: The vacuum processor is equipped with a power divider 112 for dividing high frequency electric power, which is outputted from a high frequency power source 108, to a plurality of conductor lines 113, a power divider container 111 composed of walls that contain the power divider 112 and that is maintained at a prescribed potential, and a plurality of high frequency electrodes 115 that are installed outside the power divider container 111 and a reactor container 101 comprising at least dielectric members and that are connected to each of the conductor lines 113. The plurality of conductor lines 113 in the power divider container 111 are electrically insulated from the wall of the container 111 at its exit 116, satisfying the relation of ε1/d≤2.5 assuming that the shortest distance between the surface of the conductor lines 113 and the wall of the power divider container 111 is d (mm) and that the relative permittivity in-between is ε1. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing method and a vacuum processing apparatus for performing vacuum processing on a substrate installed in a reaction vessel, and more particularly to a method and apparatus suitable for forming a deposited film by a plasma CVD method. It is a thing.

[0002]

2. Description of the Related Art There is a plasma CVD method utilizing discharge energy as one of deposited film forming methods. An amorphous thin film (for example, amorphous silicon compensated by hydrogen or / and halogen) formed by this method is an electron Applications to photographic photoreceptors, semiconductor devices, semiconductor elements such as TFTs have been proposed, and some of them have been put to practical use. In particular, the plasma CVD method using high frequency power in the RF band of 13.56 MHz is widely used because it can process substrate materials, deposited film materials, etc. regardless of conductors or insulators, and is relatively easy to handle. ing. Moreover, in recent years, plasma C using VHF band high frequency power
The VD method (VHF-PCVD method) has been attracting attention, and the development of various deposited film forming methods using the VD method has been actively promoted. This is because when the VHF-PCVD method is used, the film deposition rate is high and a high quality deposited film can be obtained.
This is because it is expected that cost reduction and quality improvement of products can be achieved at the same time. For example, Japanese Patent Laid-Open No. 6-287760
The publication discloses an apparatus and method that can be used for forming an a-Si (amorphous silicon) -based electrophotographic photoreceptor. Further, Japanese Patent Application Laid-Open No. 8-253865 discloses a technique of forming a deposited film on a plurality of substrates at the same time by using a plurality of electrodes, which improves productivity and improves uniformity of deposited film characteristics. It has been shown that the effect of is obtained.

[0003]

By the above-mentioned conventional method and apparatus, a good deposited film can be formed with high productivity. However, there is room for further improvement in realizing a highly productive deposited film formation. One of them is to improve the uniform processing ability between a plurality of substrates. In order to realize it, when using a plurality of high-frequency electrodes, it is necessary to supply electric power to the plurality of high-frequency electrodes evenly, but the required level is increasing year by year,
There is a strong demand for some kind of fundamental measures and improvements.

Under such circumstances, measures and improvements for uniform supply of high-frequency power used for forming a deposited film are extremely important, and various studies have been made so far. A power dividing unit that divides high-frequency power into multiple conductor lines is installed in a power dividing container that consists of wall surfaces that are maintained at a prescribed potential, so that high-frequency power is evenly divided into multiple conductor lines. Is possible. As a result, the uniformity between multiple substrates is greatly improved, but as mentioned above, the required level for the formation of deposited films with higher productivity will become higher and higher, and further improvement will improve the uniformity. The need has arisen.

Therefore, an object of the present invention is to overcome the above-mentioned conventional problems and to realize a more uniform power supply to a plurality of high frequency electrodes, thereby realizing a uniform treatment between a plurality of substrates. It is to provide a vacuum processing apparatus and a vacuum processing method.

[0006]

As a result of intensive studies to achieve the above object, the inventors of the present invention have found that power can be divided more uniformly by optimizing the configuration of the power divider. Heading out, the present invention has been completed.

That is, in the vacuum processing apparatus of the present invention, the high frequency power source, the conductor line of the high frequency power output from the high frequency power source, the matching circuit, and the high frequency power output from the high frequency power source are transmitted to a plurality of conductor lines. And a power division unit that divides
A power dividing container including a wall surface that includes the power dividing portion and is maintained at a predetermined potential, the power dividing container and a part of the reaction container that is installed outside the reaction container that is configured by a dielectric member, and each of the plurality of conductor lines. In a vacuum processing apparatus comprising: a plurality of high-frequency electrodes connected to each other, for performing vacuum processing on a substrate installed in the reaction container, the plurality of conductor lines in the power dividing container are outlets of the power dividing container. Is electrically insulated from the wall surface of the power division container, and the shortest distance between the surface of the conductor line and the wall surface of the power division container is d [m
m] and the relative permittivity between them is ε1, ε1 / d ≦
It is characterized by satisfying the relationship of 2.5.

Further, in the vacuum processing method of the present invention, the high frequency power output from the high frequency power source is introduced into the power dividing container consisting of the wall surface maintained at a predetermined potential after passing through the conductor line and the matching circuit, After dividing into a plurality of conductor lines at the power dividing part in the power dividing container and outputting to the outside of the power dividing container, a plurality of parts installed outside the depressurizable reaction container partially composed of a dielectric member To the high-frequency electrode, and by introducing the high-frequency power into the reaction vessel,
In a vacuum processing method for performing vacuum processing on a substrate installed in the reaction container, the plurality of conductor lines in the power dividing container are electrically insulated from a wall surface of the power dividing container at an outlet of the power dividing container. When the shortest distance between the surface of the conductor line and the wall surface of the power dividing container is d [mm] and the relative permittivity between them is ε1, the relationship of ε1 / d ≦ 2.5 is satisfied. There is.

The effects of the present invention will be described in detail below.

In the present invention, the power dividing space formed by the power dividing container and the space in which the high frequency electrode is installed are separate. As a result, it is possible to obtain the effect of uniform division of power. The reason for this is not clear at present, but when a high-frequency electrode is installed in the power division container,
For some reason, for example, when a non-uniform distribution of the electric field is temporarily generated between a plurality of high-frequency electrodes due to plasma fluctuations during vacuum processing, the effect may be significantly reflected in the power division. As a result, if the power division becomes unbalanced under the influence of the non-uniform electric field on the radio frequency electrode, this further causes the electric field on the radio frequency electrode to become non-uniform, which again
It is speculated that this may be because it may cause a vicious circle that has an adverse effect on power division.

Further, in the present invention, the conductor line divided into a plurality of pieces in the power division container is electrically insulated from the wall surface of the power division container at the outlet of the power division container, and the surface of the conductor line and the wall surface of the power division container. And the shortest distance d [mm] between them and the relative permittivity ε1 therebetween are ε1 / d ≦ 2.5. The reason why the power is divided more evenly is not clear at present, but it is presumed as follows. In the case of ε1 / d> 2.5, the electric potential distribution on the wall surface of the power division container fluctuates due to, for example, plasma fluctuations during vacuum processing due to some trigger, so that the electric field between the plurality of conductor lines after division is increased. In some cases, the non-uniform distribution of the power generation occurs temporarily, and the influence may be significantly reflected in the power division. Therefore, ε1 / d ≦ 2.5,
By ensuring sufficient insulation between the surface of the conductor line and the wall surface of the power division container, even if the potential distribution on the wall surface of the power division container fluctuates temporarily, the conductor line is affected by it. That is, it does not adversely affect the power division. Furthermore, even when a non-uniform distribution of the electric field is temporarily generated between the high frequency electrodes, a more remarkable uniform power dividing effect can be obtained. Also, ε1
When / d ≦ 1, the effect of the present invention can be more remarkably obtained, which is more preferable.

Further, the present invention is particularly effective when the frequency of the high frequency power is in the range of 50 MHz to 250 MHz. The reason for this is not clear, but at a high frequency of 50 MHz or higher, the high frequency power easily propagates to the conductive member forming the device. Therefore, it is considered that, for example, the fluctuation of plasma or the like significantly affects the potential distribution on the wall surface of the power division container, and the power division is likely to be adversely affected. Therefore, it is speculated that the effect of power division equalization achieved by the present invention may be remarkably exhibited at a high frequency of 50 MHz or more.
Moreover, in the high frequency of 250 MHz or more,
Since the high frequency power is significantly attenuated when propagating through the conductor line, it is not easy to generate a uniform plasma in the vacuum container, and it is speculated that the effect of the present invention may not be sufficiently obtained. There is.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Next, the present invention that achieves the above effects will be described in detail below with reference to the drawings.

FIG. 1 shows the plasma CVD used in the present invention.
FIG. 1 is an example of a schematic view of a manufacturing apparatus for an electrophotographic photosensitive member by a method, and is a schematic cross-sectional view of the manufacturing apparatus as seen from the side. 2 is a schematic sectional view taken along the section line XX 'in FIG. 1, FIG. 3 is a schematic sectional view taken along the section line YY' in FIG. 1, and FIG. 4 is sectioned along the section line ZZ 'in FIG. It is a schematic sectional drawing.

The electrophotographic photoreceptor manufacturing apparatus shown in FIGS. 1 to 4 has a reaction vessel 101 in which a cylindrical substrate 102 on which a deposited film is formed is installed. A substrate heater 107 for heating the substrate 102 is arranged inside the substrate 102 along the longitudinal direction of the substrate 102. At least a part of the reaction vessel 101 is made of a dielectric material. Inside the reaction vessel 101, a source gas introduction means 104 connected to a gas supply device (not shown) outside the reaction vessel 101, a pressure regulator, a mass flow controller and the like via a gas pipe 103 is arranged. Furthermore, the reaction container 10
1 has a pressure measuring means 105 for monitoring the internal pressure, and also has a throttle valve 106 for communicating the inside of the container with the outside of the container by opening a valve whose opening can be adjusted.

An earth shield 114 is provided outside the side wall of the reaction container 101 so as to surround the reaction container 101. Side wall of reaction vessel 101 and earth shield 1
A plurality of high frequency electrodes 115 are provided between the reaction vessel 10 and
1 is evenly arranged around 1.

The plurality of high frequency electrodes 115 are connected to the conductor lines 113 divided by the power dividing section 112, respectively.
The power dividing unit 112 is connected to the matching circuit 1 via the conductor line 117.
10, the matching circuit 110 is connected to the high frequency power supply 108 via the conductor line 109.

A power dividing container 111 that covers (includes) a part of the conductor line 117 and the power dividing portion 112 connected to the conductor line 113 to a plurality of conductor lines 113 is formed separately from the reaction container 101 and has a predetermined shape. It is maintained at the electric potential.

Next, an example of the deposited film forming method according to the present invention, which is carried out by using the apparatus shown in FIG. 1, will be described in detail below.

After the substrate 102 is placed in the reaction vessel 101 at least a part of which is made of a dielectric material, the inside of the reaction vessel 101 is evacuated by using an exhaust device (for example, a vacuum pump). After sufficiently exhausting the inside of the reaction vessel 101, the required heating gas supplied from gas cylinders such as He, N ₂ , Ar and H _{2 in} a gas supply device (not shown) is not shown. The reaction flow rate is adjusted to an appropriate flow rate via a pressure regulator, a mass flow controller, etc., and the reaction vessel 10 via the gas pipe 103 and the raw material gas introducing means 104.
It is sent within 1. Reaction vessel 10 after introduction of heating gas
The pressure in 1 is monitored by the pressure measuring means 105, and is controlled to a predetermined value by adjusting the opening of the throttle valve 106 or the like. When a predetermined substrate heating environment is prepared, the substrate 102 is heated by the substrate heating heater 107.
Is indirectly heated to a predetermined temperature.

After completion of the predetermined heating, the required deposition of the gas supplied from a gas cylinder of SiH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , PH ₃ 3 etc. in a gas supply device (not shown). The gas for film formation is adjusted to an appropriate flow rate through a pressure regulator and a mass flow controller, and the gas pipe 10
3, the reaction vessel 101 via the raw material gas introduction means 104
Sent in. The pressure in the reaction vessel 101 after the deposition film forming gas is introduced is monitored by the pressure measuring means 105, and is controlled to a predetermined value by adjusting the opening degree of the throttle valve 106 or the like. When a predetermined deposited film forming environment is prepared, the high frequency power output from the high frequency power supply 108 passes through the conductor line 109 and the matching circuit 110, and then enters the power dividing container 111 having a wall surface maintained at a predetermined potential. be introduced. After that, the high-frequency power is divided into a plurality of conductor lines 113 in the power dividing unit 112 in the power dividing container 111, is output to the outside of the power dividing container 111, and then, a reaction in which at least a part is composed of a dielectric member. The reaction container 1 is provided via a plurality of high-frequency electrodes 115 installed between the container 101 and the earth shield 114.
Introduced into 01 to generate plasma. The plasma decomposes the deposited film forming gas to form a deposited film on the substrate 102.

In the present invention, the power dividing container 1
The plurality of conductor lines 113 in 11 are electrically insulated from the wall surface of the power division container 111 at the outlet 116 from the power division container 111. At that time, the relation between the shortest distance d [mm] between the surface of the conductor line 113 and the wall surface of the power dividing container 111 and the relative permittivity ε1 therebetween is ε1 / d ≦ 2.5.

An example of the shortest distance d [mm] between the surface of the conductor line 113 and the wall surface of the power dividing container 111 here is shown in FIGS. 5 (A) and 5 (B). The arrows in the figure indicate the surface of the conductor line 113 and the power dividing container 11 in each configuration.
1 shows the shortest distance d [mm] from the wall surface, and the shaded portion (gray portion) in the figure is the surface of the conductor line and the power dividing container 11
1 shows a space between the wall surface and the wall surface. In addition, a member made of an insulating material may be installed in the shaded space in the figure, or the member may not be installed and the air is electrically connected between the conductor line and the power dividing container by air. The structure may be insulated. However, from the viewpoint of stably fixing the conductor line 113 so as not to contact the wall surface of the power dividing container 111, it is preferable to install a member made of an insulating material. Examples of the material of the insulating member include ceramic materials such as alumina, zirconia, mullite, cordierite, silicon carbide, boron nitride and aluminum nitride, and Teflon (registered trademark).

The power dividing section 112 in the present invention is a coupling section between one conductor line 117 on the matching circuit 110 side and a plurality of conductor lines 113 on the high frequency electrode 115 side. 2 and 6 are schematic diagrams showing an example of the power dividing unit 112 when viewed from directly above. The shape of the power dividing unit 112 is a dot shape in FIG. 2 and a disk shape in FIG. 6, but the power dividing unit 112 has an axis passing through the coupling point between the conductor line 117 on the matching circuit 110 side and the power dividing unit 112. In contrast, it is preferably rotationally symmetrical.

Further, in the present invention, in order to obtain the effect of the even power division more significantly, the conductor line 1 after the power division is obtained.
It is effective that all 13 have the same shape, length and material.

In addition, the conductor lines 109, 1 according to the present invention
13, 117 are capable of transmitting high-frequency power at least on a part of the surface thereof. That is, it is sufficient that the conductor is continuously formed in at least a part of the surface in the high frequency transmission direction. Therefore, the entire conductor may be formed of a conductor, or the conductor may be formed on a part of the surface of the insulating material. It may be provided with a region. The shape is not particularly limited, and may be linear, columnar, plate-shaped or the like. Further, examples of the material thereof include metal materials such as copper, SUS and aluminum. Further, a part of the surface of the insulating material may be silver-plated or the like.

[0027]

EXAMPLES The vacuum processing apparatus and method of the present invention will be described in more detail below with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

(Embodiment 1) In the vacuum processing apparatus shown in FIG. 1, at the outlet 116 of the conductor line 113 in the power division container 111, the shortest distance d [mm] between the surface of the conductor line and the wall surface of the power division container. , And the relative permittivity ε1 between them was (a) ε1 / d = 2.5 (b) ε1 / d = 1 (c) ε1 / d = 0.5.

In each vacuum processing apparatus, after the high frequency power supplied from the high frequency power supply 108 with an oscillation frequency of 105 MHz is passed through the matching circuit 110, it is sent to the power dividing unit 112 in the power dividing container 111 whose wall surface is at the ground potential. It is introduced, divided into six directions, output to the outside of the power dividing container 111, and applied to the six high-frequency electrodes 115, so that the surface of the substrate 102, which is a cylindrical aluminum cylinder having a diameter of 80 mm and a length of 358 mm, is displayed. An electrophotographic photoreceptor including a charge injection blocking layer, a photoconductive layer, and a surface layer was prepared under the conditions shown in 1.

[0030]

[Table 1] (Comparative Example 1) In this example, in the vacuum processing apparatus of FIG. 1 used in Example 1, the conductor line 1 in the power division container 111 is used.
At the outlet 116 of 13, the shortest distance d [mm] between the surface of the conductor line and the wall surface of the power division container, and the relative permittivity ε therebetween
The relationship with 1 is ε1 / d = 3, and in the same manner as in Example 1, the charge injection blocking layer is formed on the substrate 102, which is a cylindrical aluminum cylinder having a diameter of 80 mm and a length of 358 mm, under the conditions shown in Table 1. An electrophotographic photoreceptor comprising a photoconductive layer and a surface layer was prepared.

(Evaluation of Example 1 and Comparative Example 1) Example 1
The electrophotographic characteristics of the six electrophotographic photoconductors prepared in (a) to (c) of Comparative Example 1 and Comparative Example 1 were evaluated by the methods described below, and (a) to (c) of Example 1 were evaluated. The electrophotographic photoreceptor prepared in 1 was compared with the electrophotographic photoreceptor prepared in Comparative Example 1.

[Film Thickness Variation] Eight-point film thickness was measured at regular intervals in the circumferential direction at the center position in the axial direction of the prepared electrophotographic photosensitive member using an eddy current film thickness measuring instrument, and the average value was calculated. Ask. The difference between the maximum value and the minimum value of the “film thickness” of the six electrophotographic photoconductors is evaluated as “film thickness variation”. Therefore, the smaller the value, the better. The items (a) to (c) of Example 1 were compared with Comparative Example 1, and the value of Comparative Example 1 was set to 100% and classified into the following ranks. Rank A: Less than 75% compared to Comparative Example 1 Rank B: 75% or more compared to Comparative Example 1 Less than equivalent Rank C: Equivalent to Comparative Example 1 Rank D: Increased compared to Comparative Example 1 "Evaluation method for electrophotographic characteristic variation" Each electrophotographic photosensitive member created was installed on a Canon copier NP-6750 modified for this test. , And each item was evaluated by the following specific evaluation method.

"Variation of Charging Ability" The dark portion potential at the developing device position when a constant current is applied to the main charger of the copying machine is referred to as "charging ability" (provided that it is an average value for one round in the circumferential direction). The "charging ability" of each of the six electrophotographic photoconductors produced in each of the examples and comparative examples is measured at the axially middle position.
The difference between the maximum value and the minimum value of the "chargeability" of the six electrophotographic photoconductors with respect to the average value is evaluated as "chargeability variation". Therefore, the smaller the value, the better. The items (a) to (c) of Example 1 were compared with Comparative Example 1, and the value of Comparative Example 1 was set to 100% and classified into the following ranks. Rank A: Less than 75% compared to Comparative Example 1 Rank B: 75% or more compared to Comparative Example 1 Less than equivalent Rank C: Equivalent to Comparative Example 1 Rank D: Increased compared to Comparative Example 1 "Sensitivity variation" After the current value of the main charger is adjusted so that the dark portion potential at the developing device position becomes a predetermined value, image exposure is performed. Next, the light quantity of the image exposure light source is adjusted so that the surface potential (bright potential) at the developing device position becomes a predetermined value, and the exposure amount at that time is defined as "sensitivity" (however,
The average value for one round in the circumferential direction). The “sensitivity” of each of the six electrophotographic photoconductors produced in each of the examples and comparative examples is measured at the axially middle position. The difference between the maximum value and the minimum value of the "sensitivity" of the six electrophotographic photoconductors is evaluated as "sensitivity variation". Therefore, the smaller the value, the better. The items (a) to (c) of Example 1 were compared with Comparative Example 1, and the value of Comparative Example 1 was set to 100% and classified into the following ranks. Rank A: Less than 75% compared to Comparative Example 1 Rank B: 75% or more compared to Comparative Example 1 Less than equivalent Rank C: Equivalent to Comparative Example 1 Rank D: Increased compared to Comparative Example 1 The results are shown in Table 2.

[0034]

[Table 2] As is apparent from Table 2, the relationship between the shortest distance d [mm] between the surface of the conductor line and the wall surface of the power division container at the outlet 116 of the conductor line 113 in the power division container 111 and the relative permittivity ε1 therebetween. By setting ε1 / d ≦ 2.5, and even more preferably by setting ε1 / d ≦ 1, it is possible to suppress variations in film thickness and electrophotographic characteristics between electrophotographic photoreceptors.

(Embodiment 2) In this embodiment, as in Embodiment 1,
In the vacuum processing apparatus shown in FIG. 1, a high-frequency power supply 108 having an oscillation frequency of a) 30 MHz, b) 50 MHz, c) 250 MHz, d) 300 MHz is prepared, and each high-frequency power supply is used. Under the conditions shown in FIG. 1, a total of four types of electrophotographic photoreceptors including a charge injection blocking layer, a photoconductive layer, and a surface layer were prepared.

In this example, the power dividing container 111
At the outlet 116 of the conductor line 113 inside, the relationship between the surface of the conductor line and the wall surface of the power dividing container, d [mm], and the relative permittivity ε1 therebetween is ε1 / d = 0.5.

Comparative Example 2 In this example, the vacuum processing apparatus shown in FIG. 7 was used instead of the vacuum processing apparatus shown in FIG. 1 used in Example 2. In the vacuum processing apparatus shown in FIG. 7, the space where the power dividing unit is installed and the space where the high frequency electrode is installed are the same.

As the high-frequency power source 108, those having an oscillation frequency of a) 30 MHz, b) 50 MHz, c) 250 MHz, d) 300 MHz are prepared, and the conditions shown in Table 1 are used in the same manner as in Comparative Example 1 using the respective high-frequency power sources. Then, a total of four types of electrophotographic photoreceptors comprising a charge injection blocking layer, a photoconductive layer and a surface layer were prepared.

(Evaluation of Example 2 and Comparative Example 2) Example 2
Of (a) to (d) and (a) to (d) of Comparative Example 2 in which the “film thickness variation”, the “charging capability variation”, and the “sensitivity variation” among the six electrophotographic photoconductors were measured. The three items were evaluated, and (a) of Example 2 and (a) of Comparative Example 2; (b) of Example 2 and (b) of Comparative Example 2;
Comparative example 2 is compared with (c) of Example 2 and (c) of Comparative Example 2, and (d) of Example 2 and (d) of Comparative Example 2 respectively.
The value was evaluated as 100% and the samples were classified into the following ranks. The results are shown in Table 3. Rank A: Less than 75% compared to Comparative Example 2 Rank B: 75% or more compared to Comparative Example 2 Less than equivalent Rank C: Equivalent to Comparative Example 2 Rank D: Increased compared to Comparative Example 2

[0040]

[Table 3] As is clear from Table 3, the oscillation frequency is 50MHz or more 2
When the electrophotographic photoconductor is manufactured by using a high frequency power source of 50 MHz or less, the effect of the present invention can be remarkably obtained, and variation between electrophotographic photoconductors can be suppressed.

(Embodiment 3) In this embodiment, in the vacuum processing apparatus of FIG. 1 used in Embodiment 2, only the power dividing section 112 is changed to the shape shown in FIG. 6 to prepare a vacuum processing apparatus. Using a high frequency power supply 108 with an oscillation frequency of 105 MHz, an electrophotographic photoreceptor including a charge injection blocking layer, a photoconductive layer and a surface layer was prepared under the conditions shown in Table 1 in the same manner as in Example 1.

In this example, the power dividing container 111
The relation between the surface of the conductor line and the wall surface of the power dividing container at the outlet 116 of the conductor line 113 inside, d [mm], and the relative permittivity ε1 therebetween is ε1 / d = 0.3.

When the "thickness variation", "charging ability variation", and "sensitivity variation" of the six electrophotographic photoconductors produced were evaluated, good results were obtained in all the items.

(Embodiment 4) In this embodiment, instead of the vacuum processing apparatus of FIGS. 1 and 6 used in Embodiment 3, as shown in FIG. 8, two high frequency power sources 501A and 501B and a matching circuit 502A, Using the vacuum processing device with 502B installed, set the oscillation frequency (f1) of the high frequency power supply (A) 501A to 1
05MHz, high frequency power supply (B) 501B oscillation frequency (f
2) is set to 70 MHz, and the high frequency power supplied from them is once combined after passing through the matching circuit (A) 502A and the matching circuit (B) 502B. After that, the wall surface is introduced into the power dividing unit 112 in the power dividing container 111 with the earth potential,
The power is divided into six directions, output to the outside of the power dividing container 111, and applied to the six high-frequency electrodes 115 to obtain a diameter of 80.
An electrophotographic photosensitive member including a charge injection blocking layer, a photoconductive layer and a surface layer was prepared under the conditions shown in Table 4 on a substrate 102 which was a cylindrical aluminum cylinder having a length of 358 mm and a length of 358 mm.

In this example, the shortest distance d [mm] between the surface of the conductor line and the wall surface of the power division container at the outlet 116 of the power division container 111 of the conductor line 113, and the relative permittivity ε1 therebetween. The relationship is ε1 / d = 0.3.

The six electrophotographic photoconductors prepared were evaluated for "film thickness variation", "charging ability variation", and "sensitivity variation", and good results were obtained for all the items.

[0047]

[Table 4] ** Each parameter was changed continuously within 5 minutes

[0048]

As described above, the vacuum processing apparatus and the vacuum processing method of the present invention include a high-frequency power source, a conductor line of high-frequency power output from the high-frequency power source, a matching circuit, and an output from the high-frequency power source. A power dividing unit configured to divide the generated high frequency power into a plurality of conductor lines; a power dividing container including a wall surface that includes the power dividing unit and is maintained at a predetermined potential; and the power dividing container and at least a part of the dielectric. In a configuration that is provided outside a reaction vessel composed of a member and that includes a plurality of high-frequency electrodes that are connected to each of the plurality of conductor lines, and that performs vacuum processing on a substrate provided in the reaction vessel, The plurality of conductor lines in the power dividing container,
At the outlet of the power dividing container, electrically insulated from the wall surface of the power dividing container, the shortest distance between the surface of the conductor line and the wall surface of the power dividing container is d [mm], and the relative permittivity therebetween is ε1. By satisfying the relationship of ε1 / d ≦ 2.5, even if the potential distribution on the wall surface of the power division container fluctuates temporarily, the conductor line is not affected, that is, the power division. Will not be adversely affected. Furthermore, even when a non-uniform distribution of the electric field is temporarily generated between the high frequency electrodes, a more remarkable uniform power dividing effect can be obtained.

The frequency of the high frequency power is set to 50 MHz.
By defining the range from z to 250 MHz,
The effect of equalization of the power division achieved by the present invention remarkably appears, and it becomes easy to generate a uniform plasma in the vacuum container.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of an example of a vacuum processing apparatus according to the present invention as seen from the side of a manufacturing apparatus for an electrophotographic light-receiving member by a plasma CVD method.

FIG. 2 is a schematic cross-sectional view taken along the section line XX ′ in FIG.

FIG. 3 is a schematic cross-sectional view taken along the section line YY ′ of FIG.

FIG. 4 is a schematic sectional view taken along the section line ZZ ′ of FIG.

FIG. 5 is an example of an outlet of a conductor line in the power dividing container according to the present invention.

FIG. 6 is an example of a power dividing unit of the vacuum processing apparatus according to the present invention.

FIG. 7 shows an example of a conventional vacuum processing apparatus, plasma CVD
It is a schematic explanatory view of a manufacturing apparatus of a light receiving member for electrophotography by the method.

FIG. 8 is a schematic explanatory diagram of an example of a vacuum processing apparatus according to the present invention, which is an apparatus for manufacturing an electrophotographic light-receiving member by a plasma CVD method.

[Explanation of symbols]

101 reaction vessel 102 base 103 gas piping 104 Source Gas Introducing Means 105 Pressure measuring means 106 Throttle valve 107 Substrate heating heater 108 high frequency power supply 109 conductor track 110 matching circuit 111 power split container 112 Power division unit 113 conductor track 114 Earth Shield 115 high frequency electrode 116 Exit of conductor track 117 Conductor line 501A high frequency power supply (A) 501B High frequency power supply (B) 502A Matching circuit (A) 502B Matching circuit (B)

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hiroyuki Katagiri             3-30-2 Shimomaruko, Ota-ku, Tokyo             Non non corporation F-term (reference) 4K030 FA03 JA03 JA18 KA30

Claims (4)

[Claims] 1. A high-frequency power supply, a conductor line for high-frequency power output from the high-frequency power supply, a matching circuit, and a power dividing unit for dividing the high-frequency power output from the high-frequency power supply into a plurality of conductor lines. A power dividing container including a wall surface that includes the power dividing portion and is maintained at a predetermined potential, and the power dividing container and the reaction container, at least a part of which is formed of a dielectric member, are installed outside the plurality of conductor lines. A plurality of high-frequency electrodes connected to each of the plurality of high-frequency electrodes, the plurality of conductor lines in the power dividing container is the power dividing container. When the shortest distance between the surface of the conductor line and the wall surface of the power division container is d [mm] and the relative permittivity between them is ε1, it is electrically insulated from the wall surface of the power division container at the outlet of Vacuum processing apparatus characterized by satisfying the relation of ε1 / d ≦ 2.5. 2. The vacuum processing apparatus according to claim 1, wherein the high frequency power supply is capable of supplying high frequency power having a frequency of 50 MHz or more and 250 MHz or less. 3. A high-frequency power output from a high-frequency power source is introduced into a power division container having wall surfaces maintained at a predetermined potential after passing through a conductor line and a matching circuit, and a power division unit in the power division container is introduced. After splitting into multiple conductor lines with and outputting to the outside of the power dividing container, supply to multiple high-frequency electrodes installed outside the depressurizable reaction container, at least a part of which is composed of a dielectric member. In the vacuum processing method of performing vacuum processing on a substrate installed in the reaction container by introducing the high-frequency power into the reaction container, the conductor line divided into a plurality of parts in the power dividing container is At the outlet of the power division container, electrically insulated from the wall surface of the power division container, the shortest distance between the surface of the conductor line and the wall surface of the power division container is d [mm], and the relative permittivity therebetween is ε1. When The vacuum processing method wherein a satisfies the relationship ε1 / d ≦ 2.5. 4. The vacuum processing method according to claim 3, wherein the high frequency power has a frequency of 50 MHz or more and 250 MHz or less.