JP2005109460A5 - - Google Patents
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- JP2005109460A5 JP2005109460A5 JP2004261235A JP2004261235A JP2005109460A5 JP 2005109460 A5 JP2005109460 A5 JP 2005109460A5 JP 2004261235 A JP2004261235 A JP 2004261235A JP 2004261235 A JP2004261235 A JP 2004261235A JP 2005109460 A5 JP2005109460 A5 JP 2005109460A5
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Claims (10)
複数の光学系を有するレンズアッセンブリと、
前記パルス発振と同期して前記レンズアッセンブリの位置を制御することによって、前記複数の光学系から少なくとも２つの光学系を選択する位置制御手段とを有し、
前記複数の光学系のうち、少なくとも一つの光学系が他の光学系と異なる構成を有することを特徴とするレーザ照射装置。 A laser oscillator that outputs laser light by pulse oscillation;
A lens assembly having a plurality of optical systems;
By controlling the position of said lens assembly in synchronization with the pulse oscillation, it has a position control means for selecting at least two optical systems from the plurality of optical systems,
A laser irradiation apparatus , wherein at least one of the plurality of optical systems has a configuration different from other optical systems .
複数の光学系を有するレンズアッセンブリと、
前記パルス発振と同期して前記レンズアッセンブリの位置を制御することによって、前記複数の光学系から少なくとも第１の光学系又は第２の光学系を選択する位置制御手段とを有し、
前記第１の光学系における前記レーザ光の空間的なエネルギー分布の反転又は回転の軸と、前記第２の光学系における前記レーザ光の空間的なエネルギー分布の反転又は回転の軸が、互いに交差することを特徴とするレーザ照射装置。 A laser oscillator that outputs laser light by pulse oscillation;
A lens assembly having a plurality of optical systems;
By controlling the position of said lens assembly in synchronization with the pulse oscillation, and a position control means for selecting at least a first optical system or second optical system from said plurality of optical systems,
Wherein the inverting or the rotational axes of the spatial energy distribution of the laser beam in the first optical system, the inversion or the axis of rotation of the laser beam spatial energy distribution of the second optical system, Laser irradiation apparatus characterized by crossing each other.
複数の光学系を有するレンズアッセンブリと、
前記パルス発振と同期して前記レンズアッセンブリの位置を制御することによって、前記複数の光学系から少なくとも２つの光学系を選択する第１の位置制御手段と、
レンズアレイ及び集光レンズを有するビームホモジナイザと、
前記レンズアレイの位置を前記レーザ光の入射方向に垂直な平面上で、又は前記レーザ光の入射方向と平行な軸上で平行移動するように制御する第２の位置制御手段とを有し、
前記複数の光学系のうち、少なくとも一つの光学系が他の光学系と異なる構成を有することを特徴とするレーザ照射装置。 A laser oscillator that outputs laser light by pulse oscillation;
A lens assembly having a plurality of optical systems;
By controlling the position of said lens assembly in synchronization with the pulse oscillation, a first position control means for selecting at least two optical systems from the plurality of optical systems,
A beam homogenizer having a lens array and a condenser lens ;
Wherein the position of the lens array on a plane perpendicular to the incident direction of the laser beam, or have a second position control means for controlling so as to move in parallel on an axis parallel to the incident direction of the laser beam,
Wherein the plurality of optical systems, a laser irradiation apparatus, characterized in that it have at least one optical system is different from the other optical system configuration.
複数の光学系を有するレンズアッセンブリと、A lens assembly having a plurality of optical systems;
前記パルス発振と同期して前記レンズアッセンブリの位置を制御することによって、前記複数の光学系から少なくとも第１の光学系又は第２の光学系を選択する第１の位置制御手段と、First position control means for selecting at least a first optical system or a second optical system from the plurality of optical systems by controlling the position of the lens assembly in synchronization with the pulse oscillation;
レンズアレイ及び集光レンズを有するビームホモジナイザと、A beam homogenizer having a lens array and a condenser lens;
前記レンズアレイの位置を前記レーザ光の入射方向に垂直な平面上で、又は前記レーザ光の入射方向と平行な軸上で平行移動するように制御する第２の位置制御手段とを有し、Second position control means for controlling the position of the lens array so as to translate on a plane perpendicular to the incident direction of the laser light or on an axis parallel to the incident direction of the laser light;
前記第１の光学系における前記レーザ光の空間的なエネルギー分布の反転又は回転の軸と、前記第２の光学系における前記レーザ光の空間的なエネルギー分布の反転又は回転の軸が、互いに交差することを特徴とするレーザ照射装置。The axis of reversal or rotation of the spatial energy distribution of the laser light in the first optical system and the axis of reversal or rotation of the spatial energy distribution of the laser light in the second optical system intersect each other. The laser irradiation apparatus characterized by performing.
前記レーザ発振器はエキシマレーザ、ガラスレーザ、ＹＡＧレーザ、ＹＶＯ４レーザ又はＧｄＶＯ４レーザを用いていることを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 4 ,
The laser oscillator is an excimer laser, a glass laser, YAG laser, YVO 4 laser or laser irradiation apparatus, characterized in that it uses a GdVO 4 laser.
前記パルス発振に同期して、複数の光学系を有するレンズアッセンブリの位置を制御することによって、前記複数の光学系のうち少なくとも２つの光学系が選択され、
前記選択された少なくとも２つの光学系によって、レーザ光の空間的なエネルギー分布が互いに異なる複数のパルスを形成し、
前記複数のパルスを、半導体膜の同一領域に照射することを特徴とする半導体装置の作製方法。 Laser light is output by pulse oscillation ,
In synchronization with the pulse oscillation, I by the controlling the position of the lens assembly having a plurality of optical systems, before the at least two optical systems of Kifuku of the optical system is selected,
A plurality of pulses having different spatial energy distributions of the laser light are formed by the selected at least two optical systems,
The pulse before Kifuku number, the method for manufacturing a semiconductor device and irradiating the same region of the semiconductor film.
前記パルス発振に同期して、複数の光学系を有するレンズアッセンブリの位置を制御することによって、前記複数の光学系のうち少なくとも２つの光学系が選択され、
前記選択された少なくとも２つの光学系によって、レーザ光の空間的なエネルギー分布が互いに反転又は回転した複数のパルスを形成し、
前記複数のパルスを、半導体膜の同一領域に照射することを特徴とする半導体装置の作製方法。 Laser light is output by pulse oscillation ,
In synchronization with the pulse oscillation, I by the controlling the position of the lens assembly having a plurality of optical systems, before the at least two optical systems of Kifuku of the optical system is selected,
By at least two optical systems the selected, to form a plurality of pulses where the spatial energy distribution of the laser beam is rotated inverted or each other,
The pulse before Kifuku number, the method for manufacturing a semiconductor device and irradiating the same region of the semiconductor film.
前記パルス発振に同期して、複数の光学系を有するレンズアッセンブリの位置を制御することによって、前記複数の光学系のうち少なくとも第１の光学系及び第２の光学系が選択され、
前記第１の光学系により第１の直線を軸としてレーザ光の空間的なエネルギー分布が互いに反転又は回転した第１のパルスを形成し、
前記第２の光学系により前記第１の直線と交差する第２の直線を軸としてレーザ光の空間的なエネルギー分布が互いに反転又は回転した第２のパルスを形成し、
前記第１のパルスと前記第２のパルスを含む複数のパルスを、半導体膜の同一領域に照射することを特徴とする半導体装置の作製方法。 Laser light is output by pulse oscillation ,
In synchronization with the pulse oscillation, I by the controlling the position of the lens assembly having a plurality of optical systems, at least a first optical system 及 beauty second optical system of the prior Kifuku of the optical system Selected
The first optical system forms a first pulse in which the spatial energy distributions of the laser beams are reversed or rotated with respect to the first straight line as an axis,
Forming a second pulse in which the spatial energy distributions of the laser beams are reversed or rotated with respect to each other about the second straight line intersecting the first straight line by the second optical system;
A method for manufacturing a semiconductor device , wherein the same region of a semiconductor film is irradiated with a plurality of pulses including the first pulse and the second pulse .
前記パルス発振に同期して、複数の光学系を有するレンズアッセンブリの位置を制御することによって、前記複数の光学系のうち少なくとも２つの光学系が選択され、
前記選択された少なくとも２つの光学系によって、レーザ光の空間的なエネルギー分布が互いに反転又は回転した第１の複数のパルスを形成し、
前記パルス発振に同期してビームホモジナイザが有するレンズアレイの位置を前記レーザ光の入射方向に垂直な平面上で、又は前記レーザ光の入射方向と平行な軸上で平行移動させて制御することによって、前記第１の複数のパルスが前記レンズアレイに入射する位置が選択され、
前記第１の複数のパルスが前記レンズアレイに入射する位置によってレーザ光の空間的なエネルギー分布が互いに異なる、第２の複数のパルスを前記ビームホモジナイザで形成し、
前記第２の複数のパルスを半導体膜の同一領域に照射することを特徴とする半導体装置の作製方法。 Laser light is output by pulse oscillation ,
In synchronization with the pulse oscillation, by controlling the position of the lens assembly having a plurality of optical systems, wherein at least two optical systems among a plurality of optical systems are selected,
By at least two optical systems the selected, to form a first plurality of pulses spatial energy distribution of the laser beam is rotated inverted or each other,
By controlling the position of the lens array of the beam homogenizer in parallel with the pulse oscillation on a plane perpendicular to the incident direction of the laser beam or on an axis parallel to the incident direction of the laser beam. A position at which the first plurality of pulses are incident on the lens array is selected;
Forming a second plurality of pulses by the beam homogenizer, wherein spatial energy distributions of laser light are different from each other depending on a position at which the first plurality of pulses are incident on the lens array;
A method for manufacturing a semiconductor device, wherein the same region of the semiconductor film is irradiated with the second plurality of pulses .
前記パルス発振に同期して、複数の光学系を有するレンズアッセンブリの位置を制御することによって、前記複数の光学系のうち少なくとも第１の光学系及び第２の光学系が選択され、
前記第１の光学系により第１の直線を軸としてレーザ光の空間的なエネルギー分布が互いに反転又は回転した第１のパルスを形成し、
前記第２の光学系により前記第１の直線と交差する第２の直線を軸としてレーザ光の空間的なエネルギー分布が互いに反転又は回転した第２のパルスを形成し、
前記パルス発振に同期してビームホモジナイザが有するレンズアレイの位置を前記レーザ光の入射方向に垂直な平面上で、又は前記レーザ光の入射方向と平行な軸上で平行移動させて制御することによって、前記第１のパルス又は前記第２のパルスが前記レンズアレイに入射する位置が選択され、
前記第１のパルスが前記レンズアレイに入射する位置によってレーザ光の空間的なエネルギー分布が互いに異なる、第３のパルスを前記ビームホモジナイザで形成し、
前記第２のパルスが前記レンズアレイに入射する位置によってレーザ光の空間的なエネルギー分布が互いに異なる、第４のパルスを前記ビームホモジナイザで形成し、
前記第３のパルス及び前記第４のパルスを含む複数のパルスを、半導体膜の同一領域に照射することを特徴とする半導体装置の作製方法。
Laser light is output by pulse oscillation ,
In synchronization with the pulse oscillation, by controlling the position of the lens assembly having a plurality of optical systems, at least before the first optical system 及 beauty second optical system among the Kifuku of the optical system is selected,
The first optical system forms a first pulse in which the spatial energy distributions of the laser beams are reversed or rotated with respect to the first straight line as an axis,
Forming a second pulse in which the spatial energy distributions of the laser beams are reversed or rotated with respect to each other about the second straight line intersecting the first straight line by the second optical system;
By controlling the position of the lens array of the beam homogenizer in parallel with the pulse oscillation on a plane perpendicular to the incident direction of the laser beam or on an axis parallel to the incident direction of the laser beam. A position at which the first pulse or the second pulse is incident on the lens array is selected;
Forming a third pulse by the beam homogenizer, the spatial energy distribution of the laser light being different from each other depending on the position where the first pulse is incident on the lens array;
Forming a fourth pulse with the beam homogenizer, the spatial energy distribution of the laser light being different from each other depending on the position where the second pulse is incident on the lens array;
The method for manufacturing a semiconductor device, which comprises irradiating a plurality of pulses comprising said third pulse and said fourth pulse, in the same region of the semiconductor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004261235A JP4780943B2 (en) | 2003-09-09 | 2004-09-08 | Laser irradiation apparatus and method for manufacturing semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003317049 | 2003-09-09 | ||
| JP2003317049 | 2003-09-09 | ||
| JP2004261235A JP4780943B2 (en) | 2003-09-09 | 2004-09-08 | Laser irradiation apparatus and method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005109460A JP2005109460A (en) | 2005-04-21 |
| JP2005109460A5 true JP2005109460A5 (en) | 2007-10-25 |
| JP4780943B2 JP4780943B2 (en) | 2011-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2004261235A Expired - Fee Related JP4780943B2 (en) | 2003-09-09 | 2004-09-08 | Laser irradiation apparatus and method for manufacturing semiconductor device |
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| JP (1) | JP4780943B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100956339B1 (en) | 2003-02-25 | 2010-05-06 | 삼성전자주식회사 | Crystallization system of silicon and crystallization method of silicon |
| US8170072B2 (en) | 2008-01-07 | 2012-05-01 | Ihi Corporation | Laser annealing method and apparatus |
| KR101161630B1 (en) | 2008-06-12 | 2012-07-02 | 가부시키가이샤 아이에이치아이 | Laser annealing method and laser annealing apparatus |
| CN111247625B (en) * | 2017-12-21 | 2024-03-08 | 极光先进雷射株式会社 | Laser irradiation system |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179908A (en) * | 1988-01-11 | 1989-07-18 | Fujitsu Ltd | Method for uniformizing intensity distribution of laser beam |
| JP3116465B2 (en) * | 1991-10-04 | 2000-12-11 | ソニー株式会社 | Excimer laser light irradiation device |
| JPH10256179A (en) * | 1997-03-10 | 1998-09-25 | Semiconductor Energy Lab Co Ltd | Device and method for laser light irradiation |
| JP4403599B2 (en) * | 1999-04-19 | 2010-01-27 | ソニー株式会社 | Semiconductor thin film crystallization method, laser irradiation apparatus, thin film transistor manufacturing method, and display apparatus manufacturing method |
| JP2001028346A (en) * | 1999-07-14 | 2001-01-30 | Sumitomo Heavy Ind Ltd | Shutter mechanism for precise irradiation and control method |
| JP2001257174A (en) * | 2000-03-13 | 2001-09-21 | Sumitomo Heavy Ind Ltd | Laser annealing device and method |
| JP4827305B2 (en) * | 2001-03-16 | 2011-11-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR100379361B1 (en) * | 2001-05-30 | 2003-04-07 | 엘지.필립스 엘시디 주식회사 | crystallization method of a silicon film |
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2004
- 2004-09-08 JP JP2004261235A patent/JP4780943B2/en not_active Expired - Fee Related
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