JP2005101018A - Lithography system, aligner, and process for fabricating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lithography system capable of sustaining the yield of device over a long term. <P>SOLUTION: A coater/developer 50 for coating a wafer W with resist and developing the resist is connected in-line with the body chamber 12 of an aligner 10 through a delivery chamber 70 internally having a section 83 for delivering the wafer. The delivery chamber is connected with an air supply/exhaust unit 85. Gas in the delivery chamber is replaced by any one of dry air, nitrogen or rare gas by means of the air supply/exhaust unit. Consequently, chemical contaminants generated in the coater/developer when th wafer coated with resist is carried into the body chamber are removed in the delivery chamber before entering the body chamber. Since content of chemical substances in gas flowing into the body chamber is suppressed below a specified level, lowering in transmittance of exposing light and deterioration in illuminance on the image plane can be suppressed in the aligner body within the body chamber. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an exposure system, an exposure apparatus, and a device manufacturing method. More specifically, the present invention relates to an exposure system and an exposure apparatus used in a lithography process for manufacturing a microdevice such as a semiconductor element and a liquid crystal display element, and a device using the exposure system. It relates to a manufacturing method.
[0002]
[Prior art]
Conventionally, in a lithography process for manufacturing semiconductor elements, liquid crystal display elements, etc., a step-and-repeat type reduction projection exposure apparatus (so-called stepper) and a step-and-scan type scanning projection exposure apparatus (so-called scanning scanning exposure apparatus). An exposure apparatus such as a stepper) is used.
[0003]
In recent years, in these exposure apparatuses, the exposure wavelength has been shortened as the circuit pattern has become finer in response to higher integration of semiconductor elements and the like, and the improvement in resolution is inevitably required. . At present, a KrF excimer laser with an oscillation wavelength of 248 nm and an ArF excimer laser with an oscillation wavelength of 193 nm having a shorter wavelength have been used as light sources.
[0004]
Recently, it has been found that a very small amount of gas in the atmosphere around the exposure apparatus adversely affects the exposure apparatus. That is, with exposure light having a shorter wavelength and higher illuminance, for example, ammonia gas, sulfur oxide, or organosilicon compound in the atmosphere undergoes a photochemical reaction upon receiving strong energy from short-wavelength ultraviolet rays. It deposits as a cloudy substance on the surface of the optical component. When this precipitation reaches a certain amount, it causes scattering and absorption of exposure light, and causes a phenomenon that the illuminance decreases on the irradiated surface and the in-plane uniformity of illuminance deteriorates. It is also known that the surface of the optical component in the exposure apparatus is clouded by water vapor in the gas.
[0005]
Recently, from the viewpoint of increasing the sensitivity of the resist to compensate for the lack of brightness of the light source, the resist applied on the substrate contains an acid generator in the photosensitive agent in the resist and is generated by exposure. Highly sensitive chemically amplified resist that induces a catalytic reaction in the subsequent heat treatment (PEB) and promotes insolubilization (negative type) or solubilization (positive type) in the developer. Is being used.
[0006]
For example, when a positive chemically amplified resist is applied on a substrate, a small amount of basic gas at the ppb level in the atmosphere neutralizes the acid catalyst generated on the surface of the positive chemically amplified resist, thereby causing surface difficulty. After forming the solubilized layer, exposing and developing it, a phenomenon occurs in which the resist cross section that should be rectangular forms a peak called a T shape, which is similar to a T-shape. Since a chemically amplified resist that is a high-sensitivity resist cannot be used as it is, an overcoat or the like is required, resulting in a decrease in throughput.
[0007]
For these reasons, current exposure apparatuses are required to strictly manage the internal environment.
[0008]
Recently, in the lithography process, the resist coating, exposure, and development processes are performed as efficiently as possible as a series of processes, and the exposure apparatus is referred to as a coater / developer (hereinafter referred to as “C / D” as appropriate). Lithography systems that are in-line connected to each other are becoming mainstream. In such a lithography system, the substrate is transferred between the exposure apparatus and the C / D by providing openings on the respective wall surfaces adjacent to the chamber and the C / D constituting the exposure apparatus, and through these openings. Performed by a transfer robot or the like.
[0009]
[Problems to be solved by the invention]
However, as described above, when the substrate is transferred through the opening provided on the wall surface adjacent to the chamber and the C / D, the environment inside the chamber deteriorates if the apparatus is operated for a long period of time. I understand. This is because chemical contaminants generated in the C / D and contaminants in the clean room enter the inside of the chamber through openings formed in the chamber at the time of wafer exchange or the like. When it is lower than the surrounding area, the environmental deterioration is particularly remarkable.
[0010]
At this stage, as a countermeasure against the deterioration of the environment inside the chamber, a configuration is considered in which the C / D and the chamber are connected by a substrate transfer path and the gas inside the chamber is exhausted. . However, with this method, the amount of contaminants entering the chamber cannot always be kept within an allowable range.
[0011]
The present invention has been made under such circumstances, and a first object of the present invention is to suppress deterioration of the environment inside the chamber constituting the exposure apparatus and maintain the yield of the device as the final product over a long period of time. It is an object of the present invention to provide an exposure system and an exposure apparatus that can perform the above operation.
[0012]
A second object of the present invention is to provide a device manufacturing method capable of improving the productivity of a highly integrated device.
[0013]
[Means for Solving the Problems]
The exposure system according to claim 1 includes an exposure apparatus main body (22) that exposes the substrate (W) with an energy beam through the optical system (28, PL), and a chamber (12) that houses the exposure apparatus main body. An exposure apparatus (10) having a machine room (14) that houses at least a part of an air conditioner that performs air conditioning in the chamber; and a substrate processing apparatus (at least one of applying and developing a photosensitive agent to the substrate) 50); a delivery chamber (70) for connecting the chamber and the substrate processing apparatus, and a delivery chamber (77) provided therein for delivering the substrate between the substrate processing apparatus and the exposure apparatus. 70) and a supply / exhaust device (85) for supplying any one of dry air, nitrogen, and a rare gas into the delivery chamber and exhausting the gas in the delivery chamber to the outside. Obtain.
[0014]
According to this, the substrate processing apparatus that performs at least one of application and development of the photosensitive agent to the substrate and the chamber constituting the exposure apparatus are connected, and the transfer unit used for transferring the substrate between the two apparatuses is provided inside. A delivery chamber is provided. In this delivery chamber, either dry air, nitrogen, or a rare gas is supplied by an air supply / exhaust device, and internal gas is exhausted to the outside of the delivery chamber. That is, gas replacement is performed. Therefore, the chemical substance that causes environmental deterioration inside the chamber generated in the substrate processing apparatus is removed in the delivery chamber, so that the content ratio of the chemical substance in the gas flowing into the chamber can be suppressed to a predetermined value or less. Therefore, it is possible to suppress deterioration of the illuminance of the energy beam in the exposure apparatus body. For this reason, it is possible to maintain the yield of the device as the final product over a long period of time. In particular, in a substrate processing apparatus, when the photosensitive agent applied to the substrate is a chemically amplified resist, the occurrence of T-shape is reduced, so there is no need for overcoating, and throughput can be improved. It is.
[0015]
In this case, as in the exposure system according to the second aspect, the apparatus may further include a baking device (77) disposed in the delivery chamber and for baking the substrate.
[0016]
In this case, the substrate processing apparatus may be a coater (resist coating apparatus). However, as in the exposure system according to claim 3, the substrate processing apparatus is either a coater / developer or a developer. The baking may be post-exposure baking.
[0017]
In each of the exposure systems according to the second and third aspects, as in the exposure system according to the fourth aspect, the transfer of the substrate can be performed on the baking apparatus.
[0018]
In each of the exposure systems according to the first to fourth aspects, as in the exposure system according to the fifth aspect, the substrate processing apparatus can be a coater / developer.
[0019]
The exposure apparatus according to claim 6 includes an exposure apparatus main body (22) that exposes the substrate (W) with an energy beam via the optical system (28, PL), and a chamber (12) that houses the exposure apparatus main body. In the exposure apparatus having a machine room (14) for accommodating at least a part of an air conditioner for air conditioning in the chamber, the substrate processing apparatus (50) for performing at least one of application and development of a photosensitive agent to the substrate. A delivery chamber (70) that is connected and provided therein with a delivery section (77) for delivering the substrate between the substrate processing apparatus and the exposure apparatus main body; dry air, nitrogen, and A supply / exhaust device (85) for supplying any of the rare gases and exhausting the gas in the delivery chamber to the outside.
[0020]
According to this, a delivery chamber having a delivery section used for delivering the substrate between the substrate processing apparatus that performs at least one of application and development of the photosensitive agent to the substrate and the exposure apparatus main body is connected to the substrate processing apparatus. Has been. In the delivery chamber, either dry air, nitrogen, or a rare gas is supplied by the air supply / exhaust device, and the internal gas is exhausted to the outside of the delivery chamber. That is, gas replacement is performed. Therefore, the chemical substance that causes environmental deterioration inside the chamber generated in the substrate processing apparatus is removed in the delivery chamber, so that the content ratio of the chemical substance in the gas flowing into the chamber can be suppressed to a predetermined value or less. . Thereby, deterioration of the illumination intensity of the energy beam in the exposure apparatus main body can be suppressed. For this reason, it is possible to maintain the yield of the device as the final product over a long period of time. In particular, when the photosensitive agent applied to the substrate is a chemically amplified resist, the occurrence of T-shape is reduced, so there is no need for overcoating, and throughput can be improved.
[0021]
A device manufacturing method according to a seventh aspect is a device manufacturing method including a lithography process, wherein the lithography system uses the exposure system according to any one of the first to fifth aspects.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to FIGS. FIG. 1 schematically shows the overall configuration of an exposure system 100 according to an embodiment.
[0023]
The exposure system 100 includes an exposure apparatus 10 disposed on a floor surface F, and a coater / developer as a substrate processing apparatus disposed at a predetermined interval on one side (−Y side) in the longitudinal direction of the exposure apparatus 10. (C / D) 50, a delivery chamber 70 for connecting the exposure apparatus 10 and the C / D 50 in-line, and the like are provided.
[0024]
The exposure apparatus 10 includes a main body chamber 12 installed on a floor surface F in a clean room, and a machine room 14 disposed adjacent to the main body chamber 12.
[0025]
Inside the main body chamber 12, environmental conditions (cleanness, temperature, pressure, etc.) are maintained almost constant, and in the internal space, there is one large room 16 on the machine room 14 side, and the machine of this large room 16. Two small rooms 18 and 20 arranged in two upper and lower stages are provided on the side opposite to the room 14. Of these, the large chamber 16 is an exposure chamber in which the exposure apparatus main body 22 is accommodated. Hereinafter, the large room 16 is referred to as an exposure room 16.
[0026]
In the one small chamber 18, a reticle library 80 for storing a plurality of reticles as a mask and a reticle loader 82 composed of a horizontal articulated robot are sequentially arranged from the opposite side to the exposure chamber 16. . The reticle loader 82 carries the reticle R onto a later-described reticle stage RST constituting the exposure apparatus main body 22 and unloads it from the reticle stage RST. In this embodiment, a reticle loader system is constituted by the reticle library 80 and the reticle loader 82, and this reticle loader system is accommodated in the small room 18. Therefore, in the following, the small room 18 is referred to as a reticle loader room 18.
[0027]
The reticle loader system is not limited to the above-described configuration. For example, a bottom open type sealed cassette (container) capable of accommodating a plurality of reticles may be used instead of the reticle library 80, or the reticle. You may use the mechanism which slides a conveyance arm as a loader. In addition, the reticle storage unit (reticle library 80) and the reticle loader 82 may be arranged in different rooms, or the above-described sealed cassette is placed on the upper part of the reticle loader chamber 18 to maintain its airtightness. In this state, the reticle may be carried into the reticle loader chamber 18 by bottom opening. That is, only the reticle loader may be disposed in the small room 18.
[0028]
The other small chamber 20 carries therein a wafer carrier 84 for storing wafers as a plurality of substrates, a wafer coated with a resist by the C / D 50 on the wafer carrier 84, or an exposure apparatus. A horizontal articulated robot 86 for unloading the wafer W exposed by the main body 22 from the small room 20 toward the C / D 50 and between the robot 86 and the wafer stage WST as a substrate stage constituting the exposure apparatus main body 22. And a wafer transfer device 88 for transferring the wafer. In the present embodiment, a wafer loader system is configured by the wafer carrier 84, the robot 86, and the wafer transfer device 88, and this wafer loader system is accommodated in the small chamber 20. Therefore, in the following, the small chamber 20 is referred to as a wafer loader chamber 20. Here, in practice, as shown in FIG. 4A and the like, an entrance / exit 20 a is formed on the side wall on the −Y side that partitions the wafer loader chamber 20. This doorway 20a has a structure that can be opened and closed by a door 21. The door 21 is controlled to be opened and closed by a control device (not shown) via a drive system (not shown).
[0029]
Note that the wafer loader system is not limited to the above configuration, and the wafer loader system may be configured by only an articulated robot, for example.
[0030]
Returning to FIG. 1, the exposure chamber 16, reticle loader chamber 18, and wafer loader chamber 20 include an air supply conduit 24 made of a material with low outgassing such as stainless steel (SUS) or Teflon and an expandable bellows-like connection portion 26. To the machine room 14.
[0031]
The exposure apparatus main body 22 accommodated in the exposure chamber 16 includes an illumination optical system 28 including mirrors M1 and M2, a projection optical system PL disposed below the illumination optical system 28, the projection optical system PL and the illumination optical system. 28, a reticle stage RST for holding a reticle R as a mask, a wafer stage WST for holding a wafer W as a substrate, and a projection optical system PL, which are arranged below the projection optical system PL. In addition, a main body column 30 on which a wafer stage WST is mounted is provided.
[0032]
The illumination optical system 28 includes mirrors M1 and M2, an optical integrator, a field stop (both not shown), and the like. These optical members are accommodated in an illumination system housing (not shown) in a predetermined positional relationship. . The illumination optical system 28 is connected to an excimer laser such as a KrF excimer laser (output wavelength 248 nm) or an ArF excimer laser (output wavelength 193 nm) as a light source (not shown) via a routing optical system (relay optical system) (not shown). Has been. The routing optical system includes an optical system for adjusting the optical axis between the light source and the illumination optical system 28, which is called a beam matching unit at least in part. Although not shown, the interior of the illumination system housing in which the illumination optical system 28 is accommodated and the casing (lens barrel) in which the routing optical system is accommodated are each inert gas (for example, nitrogen, helium, etc.). ) And the cleanliness is maintained very well.
[0033]
Note that at least a part of the illumination optical system 28 may be disposed outside the exposure chamber 16, or in addition to or alone, the remaining part excluding the light source, the drawing optical system, and the illumination optical system 28. (For example, wafer stage WST or the like) may be arranged in a housing separate from the exposure chamber. In this case, the other casing may be arranged inside the exposure chamber 16 or outside the exposure chamber. In short, it is only necessary that at least a part of the main body of the exposure apparatus is disposed in the exposure chamber 16, and the members disposed in the exposure chamber 16 and the configuration thereof may be arbitrary.
[0034]
The main body column 30 is supported above a base plate BP installed on the bottom surface of the main body chamber 12 via a plurality of vibration isolation tables 32. The main body column 30 includes a main column 34 supported by a vibration isolator 32 and a support column 36 provided upright on the main column 34. The projection optical system PL is held in the vertical direction on the main frame forming the ceiling surface of the main column 34 via a holding member (not shown) called a first invar. As the projection optical system PL, here, a reduction optical system having a projection magnification of 1/4 or 1/5 is used. The support column 36 supports at least a part of an illumination system housing (not shown) from below.
[0035]
Wafer stage WST is driven in a two-dimensional direction on a stage base constituting the bottom plate of main column 34 by a driving device (not shown) such as a planar motor or a linear motor. Wafer W is fixed to the upper surface of wafer stage WST through a wafer holder 38 by vacuum suction or the like. The position of wafer stage WST in the XY plane and the amount of rotation (the amount of rotation about at least one of the X, Y, and Z axes) are measured via a laser mirror interferometer IF provided on wafer stage WST. For example, with a resolution of about 0.5 to 1 nm.
[0036]
The reticle stage RST is placed on a reticle stage base (not shown) that constitutes a ceiling portion of a support member called a second invar (not shown) provided on the upper surface of the main column 34. This reticle stage RST is configured to be capable of being driven minutely in a horizontal plane when the exposure apparatus main body 22 is a type that performs static exposure, and in the case of a type that performs scanning exposure, in addition to the above, the reticle stage RST is arranged in a predetermined scanning direction. It is configured to be drivable within a predetermined stroke range.
[0037]
According to the exposure apparatus main body 22 configured in this way, the pulsed ultraviolet light emitted from an excimer laser (not shown) has the required size and illuminance uniformity in the illumination optical system 28 including various lenses and mirrors. The reticle R which is shaped and formed with a predetermined pattern is illuminated, and the pattern formed on the reticle R is reduced to each shot area on the wafer W held on the wafer stage WST via the projection optical system PL. It is designed to be transcribed.
[0038]
In this embodiment, as the wafer W, for example, a wafer whose surface is coated with a positive chemically amplified resist as a photosensitive agent by a coater in the C / D 50 is used.
[0039]
A chemical filter CF <b> 1 is disposed at one end (end portion on the machine room 14 side) of the air supply conduit 24 in the main body chamber 12.
[0040]
The other end side of the air supply conduit 24 is branched into two, one branch passage 24 a is connected to the reticle loader chamber 18, and the portion of the outlet on the reticle loader chamber 18 side is in the reticle loader chamber 18. A filter box AF1 comprising an ULPA filter (ultra low penetration air-filter) and a filter plenum for removing particles in the air flowing into the air is provided. Further, a return portion 40 is provided on the opposite side of the reticle loader chamber 18 from the filter box AF1, and one end of a return duct 42 serving as an exhaust path is connected to an outer portion of the return portion 40. The other end side is connected to a part of the bottom surface of the machine room 14.
[0041]
The branch path 24a is further provided with a branch path 24c. The branch path 24c is connected to the wafer loader chamber 20, and a portion of the outlet on the wafer loader chamber 20 side is in the air flowing into the wafer loader chamber 20. A filter box AF2 including a ULPA filter and a filter plenum for removing particles is provided. A return portion 44 is provided on the opposite side of the wafer loader chamber 20 from the filter box AF2, and an exhaust port communicating with the return duct 42 is provided on the opposite side of the return portion 44 from the wafer loader chamber 20.
[0042]
Further, the other branch passage 24b has particles in the air flowing into the exposure chamber 16 arranged on the reticle loader chamber 18 side of the ejection port 90 formed at the boundary portion between the reticle loader chamber 18 and the exposure chamber 16. Is connected to a filter box AF3 comprising a ULPA filter and a filter plenum. A uniform air flow is sent from the ejection port 90 into the upper space of the exposure chamber 16 by side flow. As shown in FIG. 2, which is a cross-sectional view taken along the line AA in FIG. 1, the boundary portion between the reticle loader chamber 18 and the exposure chamber 16 where the ejection port 90 is formed, except for the reticle transfer area 92. A plurality of filter boxes AF3 are arranged around the periphery.
[0043]
Further, as shown in FIG. 1, a return portion 46 is provided on the machine chamber 14 side of the bottom of the exposure chamber 16, and a return as an exhaust path is provided on the bottom wall of the main body chamber 12 below the return portion 46. An exhaust port communicating with one end side of the duct 48 is formed, and the other end side of the return duct 48 is connected to a part of the bottom surface of the machine chamber 14.
[0044]
On the opposite side of the machine chamber 14 from the main body chamber 12 is formed an OA port 49 as an outside air intake port, and a chemical filter CF4 is disposed opposite to the OA port 49 portion. The main body chamber 12, particularly the exposure chamber 16, is always kept at a positive pressure with respect to the outside in order to maintain cleanliness. For this reason, air leaks to the outside from the front surface of the main body chamber 12. An OA port 49 is provided for taking in the outside air. Further, in the present embodiment, for the purpose of suppressing deterioration of the environment in the main body chamber 12 (so-called T-shape countermeasures for the chemically amplified resist and suppressing illuminance deterioration of the energy beam), the OA port 49 is used. In order to remove chemical contaminants (impurities) in the air taken into the exposure apparatus and to take only clean air into the apparatus, a chemical filter CF4 is provided in the OA port 49 portion.
[0045]
A cooler (dry coil) 52 is provided at a position slightly below the center in the height direction inside the machine room 14. A first temperature sensor 54 that detects the temperature of the cooler surface is disposed at the outlet of the cooler 52. The detection value of the first temperature sensor 54 is supplied to a control device (not shown).
[0046]
A first heater 56 is disposed above the cooler 52 in the air passage in the machine chamber 14 at a predetermined interval from the cooler 52. A first blower 58 is disposed at the exit of the machine chamber 14 above the first heater 56.
[0047]
Further, a branch path 60 into which approximately 1/5 of the air that has passed through the cooler 52 from the lower side to the upper side flows is provided below the first heater 56 in the air passage in the machine room 14. The end on the 14th side is configured by an expandable / contractible bellows-like member 60a. A portion of the branch path 60 opposite to the machine chamber 14 from the bellows-shaped member 60 a is disposed in the exposure chamber 16. A second heater 62 and a second blower 64 are sequentially arranged in the branch path 60, and an air outlet for the vicinity of the wafer stage WST is formed on the opposite side of the second blower 64 from the machine chamber 14. The cooler 52, the first heater 56, and the second heater 62 constitute a temperature adjustment device, and the temperature adjustment device, the first blower 58, the second blower 64, and their control system constitute an air conditioning device. ing.
[0048]
A filter box AF4 made up of a chemical filter CF2, a ULPA filter, and a filter plenum is disposed in the vicinity of the blowout port of the air sent from the second blower 64 near the wafer stage WST. An opening end on one end side of a return duct 66 as an exhaust path is arranged in a portion of the exposure chamber 16 near the wafer loader chamber 20 so as to face the ejection port provided with the chemical filter CF2 and the filter box AF4. The other end side of the return duct 66 is connected to a part of the bottom surface of the machine room 14.
[0049]
An opening is formed in a part of the bottom surface of the machine room 14 to which the three return ducts 42, 48, and 66 are connected, and a chemical filter CF3 is provided opposite to the opening. The chemical filter CF3 can be easily inserted and removed through an opening / closing door (not shown) provided in the machine room 14.
[0050]
Further, a drain pan 68 is disposed below the cooler 52 in the machine chamber 14.
[0051]
A second temperature sensor 72 that detects the temperature of the air inside the air supply conduit 24 is disposed at a portion near the machine room 14 of the branch portion of the air supply conduit 24 in the main body chamber 12. The detection value of the second temperature sensor 72 is supplied to a control device (not shown).
[0052]
Further, a third temperature sensor 74 that detects the temperature of the air sent out from the second blower 64 is disposed on the upstream side of the chemical filter CF2. The detection value of the third temperature sensor 74 is supplied to a control device (not shown).
[0053]
Next, air conditioning in the exposure apparatus 10 configured as described above will be described with reference to FIG.
[0054]
First, the first and second blowers 58 and 64 are operated by a control device (not shown), whereby the reticle loader chamber 18, the wafer loader chamber 20, and the exposure chamber 16 are respectively passed through the filter boxes AF1, AF2, AF3, and AF4. In addition, air is sent to the vicinity of the wafer stage WST in the exposure chamber 16 to air-condition each part. In this case, air conditioning is performed in the reticle loader chamber 18 and the wafer loader chamber 20 by downflow. In the exposure chamber 16, the air conditioning of each part of the exposure apparatus main body 22 during the above-described exposure operation is performed by a side flow. The air returned to the return duct 42 via the return portions 40 and 44, the air returned to the return duct 48 via the return portion 46, and the air returned to the return duct 66 are the return ducts. It passes through a chemical filter CF3 provided at the outlet on the machine chamber 14 side (in this embodiment, the inlet of the machine chamber 14). While passing through the chemical filter CF3, chemical contaminants contained in the air in the return ducts 42, 48, 66 are adsorbed and removed by the chemical filter CF3.
[0055]
The chemical clean air that has passed through the chemical filter CF3 is taken from outside the exposure apparatus via the OA port 49, and is combined with the chemical clean air that has passed through the chemical filter CF4 to constitute an air conditioner 52. To cool to a predetermined temperature. In this case, in this embodiment, the cooling operation of the cooler 52 is controlled by a control device (not shown) while monitoring the output of the first temperature sensor 54. At this time, the humidity and pressure of the air passing through the cooler portion are controlled. Is cooled to a temperature that does not cause condensation on the surface of the cooler, for example, a temperature slightly higher than 5 ° C. or about 15 ° C. As described above, since no condensation occurs on the surface of the cooler 52, the drain piping system is not provided in this embodiment. However, the surface temperature control of the cooler 52 as described above may be difficult due to the failure of the first temperature sensor 54 or the occurrence of some malfunction of the cooler 52. Therefore, in the present embodiment, the drain pan 68 is provided in consideration of such an emergency situation.
[0056]
Then, about 80% of the air that has passed through the cooler 52 and is cooled to a predetermined temperature is sent to the first heater 56, and the remaining about 20% is sent to the second heater 62 in the branch path 60. Heated to target temperature. In this case, the control device (not shown) feedback-controls the first heater 56 based on the detection value of the second temperature sensor 72 and feedback-controls the second heater 62 based on the detection value of the third temperature sensor 74. . In this case, the target temperature of the air (including the temperature control range) ejected into the exposure chamber 16 and the like via the air supply conduit 24 and the target of the air ejected near the wafer stage WST via the branch path 60. The temperature (including the temperature control range) can be set individually.
[0057]
The chemically considerably clean air heated to the respective target temperatures by the first and second heaters 56 and 62 is sent to the chemical filters CF1 and CF2 by the first and second blowers 58 and 64, respectively. . Then, the air that has passed through the chemical filter CF1 is sent into the reticle loader chamber 18, the wafer loader chamber 20, and the exposure chamber 16 through the air supply conduit 24 and the filter boxes AF1, AF2, and AF3 in the main body chamber 12, respectively. . The air that has passed through the chemical filter CF2 passes through the filter box AF4 and is sent to the vicinity of the wafer stage WST (and the laser interferometer IF).
[0058]
Particles in the air are almost certainly removed by passing through the ULPA filters in the filter boxes AF1, AF2, AF3, and AF4, respectively. Therefore, the reticle loader chamber 18, the wafer loader chamber 20, the exposure chamber 16, and the wafer stage In the vicinity of WST, only highly clean air is supplied in the sense that it does not contain particles and fine particles such as chemical contaminants, and the reticle loader system, wafer loader system, and exposure apparatus main body 22 are air-conditioned by this clean air. The Then, the air conditioning is finished, and chemically contaminated air containing chemical contaminants resulting from degassing from the exposure apparatus main body 22 and the like is returned into the return ducts 42, 48, and 66. In this way, the air conditioning of each part is repeated.
[0059]
The C / D 50 includes a casing such as a chamber, a coater (resist coating apparatus), a developer (developing apparatus) (not shown) provided in the casing, and a C / D transfer system for transferring a wafer. 71 etc. are provided. As shown in FIG. 4 (A) and the like, the C / D 50 casing has an entrance / exit (opening) 50a formed on the side wall portion on the + Y side, and the entrance / exit 50a has a structure that can be opened and closed by a door 51. It has become. The door 51 is controlled to be opened and closed by a control device (not shown) via a drive system (not shown).
[0060]
The transfer system 71 in the C / D is composed of a horizontal articulated robot, and transfers the wafer on which the resist is applied by the coater in the C / D 50 to a baking device 77 in a delivery chamber 70 to be described later. The wafer 86 is transferred to the baking device 77 by the robot 86 in the wafer loader chamber 20, and has a function of transferring the wafer after exposure to the developer in the C / D 50.
[0061]
Further, as shown in FIG. 1, a delivery chamber 70 for connecting the main body chamber 12 and the C / D 50 in-line is provided between the main body chamber 12 and the C / D 50 constituting the exposure apparatus 10. Yes. As can be seen from the perspective view of FIG. 3, a part of the delivery chamber 70 is crushed, and is provided at a cylindrical member 73 having a rectangular XZ section and at both ends of the cylindrical member 73 in the Y-axis direction. The XZ cross section is rectangular and is defined by a hollow casing composed of frames 75A and 75B formed somewhat thicker than the cylindrical member 73. A baking device 77 is disposed inside the delivery chamber 70.
[0062]
The cylindrical member 73 and the frames 75A and 75B are made of a material with little degassing such as stainless steel (SUS) or Teflon.
[0063]
The baking device 77 is a heater 79 mounted on the inner bottom surface of the delivery chamber 70, and a hot plate mounted on the main body of the heater 79, the upper surface (+ Z side surface) of which is a wafer mounting surface. 81.
[0064]
The heater 79 is composed of, for example, a heating device having an infrared heater, an infrared lamp, and the like, and the entire hot plate 81 is uniformly heated by the heater 79. Instead of the infrared heating type heater as described above, a resistance heating type heater or a hot air heating type heater may be employed.
[0065]
The hot plate 81 is made of a disk-shaped metal plate, and the upper surface thereof is processed to be flat enough to prevent deformation of the wafer even when the wafer is placed thereon. In the hot plate 81, at least three (four in FIG. 3) circular holes that are not in a straight line are formed in the vertical direction. The vertical movement pins 83 shown in FIG. 3 provided in the upper part of the main body of the heater 79 are inserted into these round holes. These vertical movement pins 83 are driven in the vertical direction by a drive mechanism (not shown). That is, the vertical movement pin 83 has a structure that can be protruded and retracted on the upper surface side of the hot plate 81 through each of the round holes.
[0066]
In addition, one end of each of the air supply pipe 87 </ b> A and the exhaust pipe 87 </ b> B is connected to the ceiling portion of the cylindrical member 73 that forms the delivery chamber 70. The other end side of the air supply pipe 87A is connected to one end of the air supply / exhaust apparatus 85 shown in FIG. 1, and the other end side of the exhaust pipe 87B is connected to the other end of the air supply / exhaust apparatus 85. The air supply / exhaust device 85 includes a supply device for supplying an inert gas (nitrogen, rare gas, etc.), an exhaust pump, a filter unit, and the like (all not shown). In the present embodiment, the inert gas is supplied from the supply device of the air supply / exhaust device 85 through the filter unit and the air supply pipe 87A into the delivery chamber 70, and the internal gas in the delivery chamber 70 is exhausted through the exhaust pipe 87B by the exhaust pump. The air is forcibly exhausted through.
[0067]
Next, a series of operations for transporting the wafer W from the C / D 50 into the wafer loader chamber 20 through the delivery chamber 70 configured as described above will be described with reference to FIGS. And with reference to other drawings as appropriate. The operations of the following units are realized by control operations of a control device (not shown), but the description of the control device is omitted here for the sake of simplicity.
[0068]
First, when the wafer W on which the resist coating has been completed in the C / D 50 is transferred to the arm of the transfer system 71 in the C / D, transfer of the wafer W toward the transfer chamber 70 by the arm is started. . At this time, in the delivery chamber 70, the internal gas and the inert gas are replaced in advance as described above by the air supply / exhaust device 85 via the air supply pipe 87A and the exhaust pipe 87B. The door 51 is opened when the arm of the C / D transfer system 71 that holds the wafer W approaches the transfer chamber 70 within a predetermined distance. At this time, the entrance / exit 20 a at the boundary between the delivery chamber 70 and the wafer loader chamber 20 is closed by the door 21. Further, the gas replacement is temporarily stopped before the door 51 is opened.
[0069]
Then, the arm of the transfer system 71 in the C / D holding the wafer W enters the delivery chamber 70 as shown in FIG. 4A, and the wafer W is above the hot plate 81 constituting the baking device 77. Proceed until it is located (almost above) and stop. In this state, when the vertical movement pin 83 is raised and the wafer W is supported by the vertical movement pin 83, the arm of the transfer system 71 in the C / D is retracted from the delivery chamber 70. Immediately after this, the door 51 is closed. Note that the gas replacement in the delivery chamber 70 is restarted with the closing of the door 51.
[0070]
Then, the vertical movement pins 83 are lowered while supporting the wafer, whereby the wafer W is placed on the hot plate 81 as shown in FIG. At this time, since the hot plate 81 is heated by the heater 79 as described above, so-called pre-baking (PAB) is performed on the wafer W from the time when the wafer W is placed on the hot plate 81. In the delivery chamber 70, gas replacement is continued during this pre-baking (PAB), and the purity of the inert gas (nitrogen, helium, etc.) is a predetermined value or higher, that is, chemical contaminants in the delivery chamber 70, etc. Is kept as low as possible.
[0071]
In addition, when the said prebaking is already performed in C / D50, the prebaking in the above delivery chambers 70 can also be abbreviate | omitted. In this case, only the wafer transfer section may be provided in the transfer chamber 70. However, for the purpose of removing (evaporating) moisture adhering to the surface of the wafer W in the C / D 50, after the pre-baking in the C / D 50, the baking is again performed using the baking device 77 in the delivery chamber 70. Can also be performed. In this case, the pre-baking temperature is lower than the pre-baking temperature (for example, 110 ° C.) in the C / D 50 and is sufficient to evaporate the adhering water (for example, 105 ° C.). The temperature of the hot plate 81 may be adjusted.
[0072]
In particular, the exposure light is F with a wavelength of 157 nm. ₂ In the case of a laser beam, the absorption of exposure light by moisture adhering to the surface of the wafer W is very large, so that even when pre-baking is completed in the C / D 50, pre-baking is performed again in the delivery chamber 70. It is desirable. Note that the baking device 77 in the delivery chamber 70 may be omitted, a baking device (or hot plate) may be provided in the wafer loader chamber 20, and prebaking may be performed in the main body chamber 12 (wafer loader chamber 20).
[0073]
When the pre-baking (PAB) is completed, or when the pre-baking (PAB) is not performed in the delivery chamber 70, the gas in the delivery chamber 70 is passed after a predetermined time has elapsed since the wafer was transferred to the wafer delivery section in the delivery chamber 70. While the replacement is temporarily stopped, the door 21 of the wafer loader chamber 20 is opened by an unillustrated opening / closing mechanism, and the arm of the robot 86 is subsequently moved into the delivery chamber 70 as shown in FIG. Break into. At this time, since the content rate of chemical contaminants and the like in the delivery chamber 70 is set as low as possible, even if the door 21 is opened, chemical contaminants and the like are hardly mixed into the wafer loader chamber 20. Absent. Further, in parallel with the arm of the robot 86 entering the delivery chamber 70, the vertical movement pin 83 rises and the arm of the robot 86 enters the lower side of the wafer W. Then, when the vertical movement pins 83 are lowered again from this state, the wafer W is transferred to the arm of the robot 86. Immediately after the arm of the robot 86 holding the wafer W is retracted from the delivery chamber 70, the door 21 is closed.
[0074]
In this way, the transfer of the wafer W from the C / D 50 to the wafer loader chamber 20 is completed.
[0075]
Further, the operation of transferring the wafer W from the wafer loader chamber 20 into the C / D 50 through the delivery chamber 70 is performed in a procedure almost opposite to the above-described operation.
[0076]
That is, when the wafer W that has been exposed to all shot areas by the exposure apparatus main body 22 in the exposure chamber 16 is transferred into the wafer loader chamber 20 by the wafer transfer device 88 shown in FIG. It is transferred to the arm of the robot 86, and the transfer of the wafer W toward the transfer chamber 70 by the arm is started. When the wafer W is loaded into the delivery chamber 70 by the operation opposite to that described above, the wafer W is placed on the hot plate 81 of the baking device 77 via the vertical movement pins 83. At this time, since the hot plate 81 is heated, post-exposure baking (PEB) is performed from the time when the wafer W is placed on the hot plate 81. During this post-exposure bake (PEB), the interior of the delivery chamber 70 is replaced by the air supply / exhaust device 85 via the air supply pipe 87A and the exhaust pipe 87B, and the purity of the inert gas (nitrogen, helium, etc.) is predetermined. More than the value, that is, the content of chemical pollutants and the like is kept as low as possible. After the post-exposure baking, the wafer W is loaded into the C / D 50 by the C / D transfer system 71.
[0077]
As is clear from the above description, in this embodiment, the transfer portion is configured by the vertical movement pins 83 that constitute the baking device 77. The illumination optical system 28 and the projection optical system PL constitute an optical system.
[0078]
As described in detail above, according to the exposure system 100 of the present embodiment, the inert gas is supplied by the air supply / exhaust device 85 in the delivery chamber 70 that connects the C / D 50 and the main body chamber 12 constituting the exposure apparatus 10. The gas is supplied and exhausted from the delivery chamber 70 to the outside by the air supply / exhaust device 85. For this reason, the invasion of the chemical substance that affects the transmittance of the optical system into the main body chamber 12 is suppressed. Further, when the wafer is transported between the main body chamber 12 constituting the exposure apparatus 10 and the C / D 50, it includes impurities such as outside air (atmosphere in a clean room), ammonia gas, sulfur oxide, or organosilicon compound. It is possible to prevent the resist applied to the wafer from being exposed to the gas. That is, it is possible to prevent a change in sensitivity of the resist applied to the wafer before exposure or after completion of exposure. Therefore, a decrease in the transmittance of exposure light (energy beam) in the exposure apparatus main body 22, an illuminance deterioration on the image plane, or the occurrence of a T-shape of the chemically amplified resist applied to the wafer is suppressed. It is possible to maintain the yield over a long period of time.
[0079]
In the present embodiment, a baking apparatus for baking the wafer is disposed in the delivery chamber 70, and baking is performed before and after exposure. As a result, it is possible to realize evaporation of residual solvent in the resist film applied to the wafer, enhancement of adhesion between the resist film and the wafer, and promotion of the catalytic reaction of the chemically amplified resist. In this case, even if the residual solvent in the resist film is evaporated in the delivery chamber 70, the vapor of the residual solvent is exhausted from the delivery chamber 70 by the air supply / exhaust device 85. Therefore, the inside of the main body chamber 12 constituting the exposure apparatus. There is almost no impact on the environment.
[0080]
In addition, since the baking apparatus 77 is provided in the delivery chamber 70, the water | moisture content adhering to the surface of the wafer W can be evaporated (removed), and especially exposure light is F with a wavelength of 157 nm. ₂ In the case of laser light, absorption of exposure light by moisture adhering to the surface of the wafer W can be suppressed.
[0081]
Further, since the wafer delivery is performed on the baking device 77, the baking and delivery can be performed quickly without providing a separate delivery mechanism, so that the throughput can be improved. .
[0082]
In addition, by providing a baking device 77 in the delivery chamber 70, it is possible to perform pre-baking or post-exposure baking while performing gas replacement to reduce chemical contaminants and the like in the delivery chamber 70. Therefore, it is possible to improve the throughput as compared with the case where both operations are performed separately.
[0083]
Further, according to the exposure system of the above embodiment, since the coater / developer is connected to the exposure apparatus in-line, it is possible to efficiently perform the resist coating, exposure, and development processes as a series of processes. ing.
[0084]
In the above embodiment, only the hot plate and the heater for heating the hot plate are provided as the baking device. However, the present invention is not limited to this, and for example, to improve the uniformity of development. Before the transfer to the developer, a cooling plate for adjusting the temperature of the heated wafer to a predetermined temperature may be added to the hot plate and provided.
[0085]
In the above embodiment, the inert gas (nitrogen, rare gas, etc.) is supplied from the air supply / exhaust device into the delivery chamber 70. However, the present invention is not limited to this. It is also possible to use dry air from which is removed.
[0086]
However, the exposure light is F with a wavelength of 157 nm. ₂ In the case of laser light, the position where the wafer is exposed (predetermined position in the wafer stage chamber) is around the periphery as described later in order to avoid absorption of exposure light by atmospheric oxygen or water vapor. It is necessary to cover with a highly airtight partition, expel oxygen and water vapor from the interior space, and replace the gas with an inert gas (a gas in which exposure light absorption is suppressed) such as helium or nitrogen gas. Therefore, in order to prevent oxygen and water vapor from entering the wafer stage chamber, it is necessary to provide the above gas replacement function in the wafer loader chamber 20 adjacent to the wafer stage chamber.
[0087]
The timing of gas replacement in the delivery chamber 70 is not limited to that shown in the above embodiment. That is, when the door 21 between the delivery chamber 70 and the wafer loader chamber 20 is opened, it is sufficient that the purity of the inert gas (nitrogen, helium, etc.) in the delivery chamber 70 is a predetermined value or more. Gas replacement may be started immediately before opening the door 21, and the door 21 may be opened when the inert gas reaches a predetermined purity.
[0088]
The gas replacement in the delivery chamber 70 may be performed in a state where a plurality of wafers are accommodated in the delivery chamber 70. Alternatively, a plurality of hot plates may be installed in the delivery chamber 70 and a plurality of wafers may be pre-baked simultaneously.
[0089]
In the above-described embodiment, the coater / developer is used as an inline connection to the exposure apparatus. However, only the developer or only the coater may be connected inline.
[0090]
Further, it is only necessary that at least a delivery unit is provided in the delivery chamber, and the baking device is not necessarily provided as in the present embodiment.
[0091]
In the above embodiment, baking using a baking apparatus is performed before and after exposure, but pre-exposure baking is not necessarily performed.
[0092]
In the above-described embodiment, the air supply and exhaust lines for supplying and exhausting air in the delivery chamber are provided on the ceiling of the partition wall that forms the delivery chamber. Alternatively, it may be provided on the bottom or on the side wall. In either case, it is possible to efficiently supply and exhaust air in the delivery chamber.
[0093]
In FIG. 1, the machine room is disposed adjacent to the main body chamber, but the machine room may be disposed under the floor (utility space) of the clean room. In this case, the light source may also be arranged under the floor. In the air conditioner, the temperature of the air is controlled, but in addition to that, the pressure may be controlled.
[0094]
Further, when ArF excimer laser light (wavelength 193 nm) is used as exposure illumination light, similarly to the illumination optical system 28, it is also provided in the lens barrel of the projection optical system PL or in the housing that houses the projection optical system PL. An inert gas (such as nitrogen) is supplied. In addition, F ₂ When laser light (wavelength 157 nm) is used as illumination light for exposure, a reticle stage and a wafer stage are respectively arranged in the sub-chamber, and in addition to the illumination optical system 28 and the projection optical system PL, the illumination optical system 28 and the projection are projected. An inert gas (such as helium) is also supplied between the optical system PL and between the projection optical system PL and the wafer W. Therefore, in an exposure apparatus that seals at least part of an illumination optical path from the light source to the wafer W including the inside of the light source and supplies an inert gas or the like therein, for example, the inert gas supplied to the illumination optical system It is preferable to provide a chemical substance removal filter (chemical filter) in the middle of the exhaust path through which it passes or also at the outlet. Of course, a chemical filter may be provided in the middle or at the entrance of the inflow path of the inert gas, which is particularly effective when the recovered inert gas is cleaned and reused. As described above, for example, when light belonging to a vacuum ultraviolet region having a wavelength of about 120 nm to 200 nm is used as exposure illumination light, the inert gas (nitrogen gas, helium gas, etc.) is used as air-conditioning air. It is done.
[0095]
In the above-described embodiment, the case where a KrF excimer laser, an ArF excimer laser, or the like is used as the light source has been described. ₂ Laser, Ar ₂ A laser may be used, or a metal vapor laser or a YAG laser may be used, and these harmonics may be used as exposure illumination light. Alternatively, infrared or visible single wavelength laser light oscillated from a DFB semiconductor laser or fiber laser is amplified by a fiber amplifier doped with, for example, erbium (Er) (or both erbium and ytterbium (Yb)). Then, a harmonic wave converted to ultraviolet light using a nonlinear optical crystal may be used as illumination light for exposure.
[0096]
In addition, the present invention is not limited to a step-and-repeat, step-and-scan, or step-and-stitch type exposure apparatus, but includes, for example, a mirror projection aligner, a proximity type exposure apparatus, and a photo repeater. It can also be applied to. That is, the present invention can be applied to any exposure system that needs to perform environmental control (such as air conditioning) regardless of the configuration of the exposure apparatus body.
[0097]
<Device manufacturing method>
Next, an embodiment of a device manufacturing method using the exposure system 100 described above in a lithography process will be described.
[0098]
FIG. 5 shows a flowchart of a manufacturing example of a device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). As shown in FIG. 5, first, in step 201 (design step), device function / performance design (for example, circuit design of a semiconductor device) is performed, and pattern design for realizing the function is performed. Subsequently, in step 202 (mask manufacturing step), a mask on which the designed circuit pattern is formed is manufactured. On the other hand, in step 203 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.
[0099]
Next, in step 204 (wafer processing step), using the mask and wafer prepared in steps 201 to 203, an actual circuit or the like is formed on the wafer by lithography or the like as will be described later. Next, in step 205 (device assembly step), device assembly is performed using the wafer processed in step 204. Step 205 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary.
[0100]
Finally, in step 206 (inspection step), inspections such as an operation confirmation test and a durability test of the device manufactured in step 205 are performed. After these steps, the device is completed and shipped.
[0101]
FIG. 6 shows a detailed flow example of step 204 in the case of a semiconductor device. In FIG. 6, in step 211 (oxidation step), the surface of the wafer is oxidized. In step 212 (CVD step), an insulating film is formed on the wafer surface. In step 213 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step 214 (ion implantation step), ions are implanted into the wafer. Each of the above-described steps 211 to 214 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.
[0102]
At each stage of the wafer process, when the above pre-process is completed, the post-process is executed as follows. In this post-processing process, first, in step 215 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step 216 (exposure step), the circuit pattern of the mask is transferred to the wafer by the exposure apparatus described above. Next, in step 217 (development step), the exposed wafer is developed, and in step 218 (etching step), the exposed member other than the portion where the resist remains is removed by etching. In step 219 (resist removal step), the resist that has become unnecessary after the etching is removed.
[0103]
By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.
[0104]
If the device manufacturing method of this embodiment described above is used, the exposure system 100 of the above embodiment is used in the resist formation process (step 215), the exposure process (step 216), the development process (step 217), etc. Therefore, it is possible to effectively suppress a decrease in exposure accuracy due to chemical contaminants and the like, and thus a highly integrated device can be manufactured with high productivity.
[0105]
【The invention's effect】
As described above, according to the exposure system of the present invention, it is possible to suppress the deterioration of the environment inside the chamber constituting the exposure apparatus and maintain the yield of the device as the final product over a long period of time. is there.
[0106]
Further, according to the exposure apparatus of the present invention, there is an effect that the yield of the device as the final product can be maintained over a long period of time.
[0107]
Further, according to the device manufacturing method of the present invention, there is an effect that the productivity of a highly integrated device can be improved.
[Brief description of the drawings]
FIG. 1 is a view showing a schematic configuration of an exposure system according to an embodiment.
FIG. 2 is a cross-sectional view taken along line AA in FIG.
FIG. 3 is a perspective view showing the delivery chamber partially broken.
FIGS. 4A to 4C are views for explaining a wafer delivery method between a coater / developer and a main body chamber. FIGS.
FIG. 5 is a flowchart for explaining an embodiment of a device manufacturing method according to the present invention.
FIG. 6 is a flowchart showing details of step 204 in FIG. 5;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Exposure apparatus, 12 ... Main body chamber (chamber), 14 ... Machine room, 22 ... Exposure apparatus main body, 28 ... Illumination optical system (a part of optical system), 50 ... Coater / developer (substrate processing apparatus), 70 ... Delivery chamber, 77 ... Baking device (delivery unit), 85 ... Air supply / exhaust device, 100 ... Exposure system, PL ... Projection optical system (part of optical system), W ... Wafer (substrate).

Claims (7)

An exposure apparatus having an exposure apparatus body that exposes a substrate with an energy beam via an optical system, a chamber that houses the exposure apparatus body, and a machine room that houses at least a part of an air conditioner that performs air conditioning in the chamber. When;
A substrate processing apparatus for performing at least one of application and development of a photosensitive agent on the substrate;
A transfer chamber for connecting the chamber and the substrate processing apparatus, and a transfer chamber provided therein for transferring the substrate between the substrate processing apparatus and the exposure apparatus;
An exposure system comprising: a supply / exhaust device that supplies any one of dry air, nitrogen, and a rare gas into the delivery chamber and exhausts the gas in the delivery chamber to the outside.   The exposure system according to claim 1, further comprising a baking device disposed in the delivery chamber for baking the substrate. The substrate processing apparatus is either a coater / developer or a developer,
The exposure system according to claim 2, wherein the bake is a post-exposure bake.   4. The exposure system according to claim 2, wherein the transfer of the substrate is performed on the baking apparatus.   The exposure system according to claim 1, wherein the substrate processing apparatus is a coater / developer. An exposure apparatus having an exposure apparatus body that exposes a substrate with an energy beam via an optical system, a chamber that houses the exposure apparatus body, and a machine room that houses at least a part of an air conditioner that performs air conditioning in the chamber. In
A delivery unit that is connected to a substrate processing apparatus that performs at least one of application and development of a photosensitive agent to the substrate, and that has a delivery unit that delivers the substrate between the substrate processing apparatus and the exposure apparatus main body. A room;
An exposure apparatus comprising: a supply / exhaust device that supplies dry air, nitrogen, or a rare gas into the delivery chamber and exhausts the gas in the delivery chamber to the outside. A device manufacturing method including a lithography process,
A device manufacturing method using the exposure system according to claim 1 in the lithography process.

Images