1233148 A7 _ __B7__ 五、發明說明（/ ) [技術領域] 本發明係關於曝光裝置及元件製造方法，詳言之，係 關於製造半導體元件、液晶顯示元件等時，微影製程所使 用之曝光裝置、及使用該曝光裝置來進行曝光之元件製造 方法。 [習知技術] 一直以來，於製造半導體元件、液晶顯示元件等之微 影製程中，係使用步進重複方式的縮小投影曝光裝置(所謂 的步進器）、或步進掃描方式的掃描型投影曝光裝置（所謂 的掃描步進器)等的曝光裝置。 近年來，此種曝光裝置因應半導體元件等的高積體化 而使得電路圖案更爲微細化，隨著解像能力的提昇之要求 ，曝光波長亦日漸短波長化。目前，所使用之光源，已有 使用振盪波長爲248nm的KrF準分子雷射，或甚至是短波 長的振盪波長爲193nm的ArF準分子雷射。而使用如此之 短波長化光源之曝光裝置，就爲了補足各光源之輝度的不 夠而提高光阻的感度以爲對應的觀點視之，作爲基板上所 塗覆的光阻，則是使用一種在該光阻中的感光劑含有氧產 生劑，並藉由曝光時所產生的氧，於持續的熱處理中引起 觸媒反應，以促進顯像液之不溶化(負型)或可溶化(正型)的 高感度之化學增強型光阻(Chemically amplified resist)。 但是，最近發現環境氣氛中的微量氣體對曝光裝置會 帶來不良影響。例如，在基板上塗覆正型化學增強型光阻 _2_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I I I I I* J— --------訂·--------—^wi (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 _____ _B7______ 五、發明說明（>) (請先閱讀背面之注意事項再填寫本頁) 時’環境氣氛中的ppb級的微量鹼性氣體，會中和發生於 該當正型化學增強型光阻的表面的氧觸媒而形成表面難溶 化層’在曝光顯像之後，產生一種應形成矩形的光阻截面 會變成稱爲T形之近似T字的簷邊之現像。由於在此狀態 下無法使用感度良好之化學增強型光阻，故必須使用外罩 等’而造成產能(throughput)的下降。 此外’隨著曝光光的短波長化、高照度化，環境氣氛 中的例如氨氣、硫磺氧化物、或有機矽化合物等，即受、到 短波長紫外線的強能量的影響而引起光化學反應，並在曝 光裝置內光學元件表面析出霧狀物質。當此析出物質到達 某程度的量時，即成爲造成光線之散射或吸收之原因，而 產生一種在照射面上的照度下降或照度之面內均勻性惡化 之現象。因此，預先將環境氣氛中的化學污染物質抑制於 低濃度中的措施就即非常重要。 由於此原由，現有的曝光裝置，被要求得嚴密管理內 部之環境。 另一方面，曝光裝置由於是極精密之裝置，爲了能發 揮各部所期望之功能，內部之溫度狀態即有必須控制於一 定。爲進行此溫度控制，習知之曝光裝置，係將以溫度調 整裝置加以溫度控制之氣體，送入至收容有曝光裝置本體 之環境控制室(chamber)內，據此而使該環境控制室內部的 空間形成均勻的溫度分佈。再者，爲了使環境控制室內部 的前述氨或其他化學污染物質之濃度爲低濃度，在經溫度 控制的氣體送入環境控制室內部之前除去化學污染物質即 —___ _4_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 A7 _B7__ 五、發明說明（7^ )1233148 A7 _ __B7__ V. Description of the Invention (/) [Technical Field] The present invention relates to an exposure device and a method for manufacturing the device. Specifically, it relates to an exposure device used in a lithography process when manufacturing a semiconductor device, a liquid crystal display device, etc. And a device manufacturing method for performing exposure using the exposure apparatus. [Known Technology] Conventionally, in the lithography process for manufacturing semiconductor elements, liquid crystal display elements, and the like, it has been a step-and-repeat type reduction projection exposure device (a so-called stepper) or a step-and-scan type scanning type. An exposure device such as a projection exposure device (so-called scan stepper). In recent years, such an exposure device has made the circuit pattern more fine due to the increase in the density of semiconductor elements and the like. With the improvement of the resolution capability, the exposure wavelength has become shorter. Currently, KrF excimer lasers with an oscillation wavelength of 248 nm have been used, or even ArF excimer lasers with a short wavelength of 193 nm. The exposure device using such a short-wavelength light source is to increase the sensitivity of the photoresist in order to make up for the insufficient brightness of each light source. It is considered that the corresponding point of view is that as a photoresist coated on a substrate, a The photosensitizer in the photoresist contains an oxygen generator, and uses the oxygen generated during exposure to cause a catalyst reaction in the continuous heat treatment to promote the insolubilization (negative type) or solubilization (positive type) of the developing solution. Highly sensitive chemically amplified resist. However, it has recently been found that trace gas in the ambient atmosphere may adversely affect the exposure device. For example, coating positive chemically-enhanced photoresist on the substrate_2_____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) IIIIII * J— -------- Order ·- ------— ^ wi (Please read the precautions on the back before filling this page) 1233148 A7 _____ _B7______ V. Description of the invention (>) (Please read the precautions on the back before filling out this page) The ppb-level trace alkaline gas in the atmosphere will neutralize the oxygen catalyst that occurs on the surface of the positive chemically enhanced photoresist to form a surface insoluble layer. After exposure and development, a light that should form a rectangle should be produced. The blocking section will become a near-T-shaped eaves appearance called a T-shape. Since a chemically enhanced photoresist with good sensitivity cannot be used in this state, it is necessary to use an outer cover or the like to cause a decrease in throughput. In addition, as the exposure light becomes shorter in wavelength and higher in illumination, in the ambient atmosphere, for example, ammonia, sulfur oxides, or organic silicon compounds, the photochemical reaction is caused by the strong energy of short-wavelength ultraviolet rays. , And a mist-like substance precipitates on the surface of the optical element in the exposure device. When the amount of the precipitated substance reaches a certain level, it will cause the scattering or absorption of light, and a phenomenon in which the illuminance on the illuminated surface decreases or the uniformity in the illuminance deteriorates. Therefore, it is very important to reduce the concentration of chemical pollutants in the ambient atmosphere in advance. For this reason, existing exposure devices are required to closely manage the internal environment. On the other hand, since the exposure device is an extremely precise device, in order to perform the desired function of each unit, the internal temperature state must be controlled to a certain degree. In order to perform this temperature control, the conventional exposure device sends a gas whose temperature is controlled by a temperature adjustment device to an environment control chamber (chamber) containing the exposure device body. The space forms a uniform temperature distribution. Furthermore, in order to keep the concentration of the aforementioned ammonia or other chemical pollutants in the environment control room to be low, remove the chemical pollutants before the temperature-controlled gas is sent to the environment control room. Standard (CNS) A4 specification (210 X 297 mm) 1233148 A7 _B7__ V. Description of the invention (7 ^)
I 可。是故，通常是使用以化學吸附方式及物理吸附方式來 除去氣體中之化學污染物質的過濾裝置(以下，方便上稱之 爲「化學過濾裝置」）。 將來，半導體元件要求能實現更高積體化是明確的， 而曝光裝置亦因應於此，被要求能實現更高精度的曝光。 因此，要求曝光裝置之構成各部分之更進一步之性能的提 昇，而作爲其中的一部分，則是更進一步的提昇環境控制 室內部的溫度控制性能。 但是，到了最近，發現爲了進行更高精度的環境控制 室內的溫度控制，即使藉由溫度調整裝置例如是空調裝置 等，將空調用氣體例如是空氣，在將其相對於目標溫度的 溫度變動幅度抑制於更嚴格的値以下之狀態下，送入至環 境控制室內時，在環境控制室內中，相對於該被送入的空 氣的目標溫度之溫度變動的幅度即會增大。如此之情形下 ，當被要求的曝光精度變得嚴格之際，溫度變動則很有可 能會造成其實現的障礙。 根據本案發明者等的推測，上述溫度變動幅度的增加 ’係由於嚴格要求曝光精度始顯現者，故推測應是某一用 以使曝光精度提昇的構成要素，爲其主要因素。於是，在 此推測下，反覆進行了各種實驗。其結果，發現在通過前 述化學過濾裝置之後較通過之前，空氣的溫度變動幅度即 會增加。 [發明欲解決之課題及解決之手段] -----5____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 1233148 A? ________B7______ 五、發明說明（+) 本發明係根據上述發明者等所得的新知新見而創作， 其第1目的，爲提供一種能同時抑制因光學構件之混濁而 產生的照度下降的弊端及溫度變動幅度之增加的曝光裝置 Ο 本發明之第2目的，爲提供一種能以良好之生產性來 製造高積體度之微元件的元件製造方法。 本案第1發明之曝光裝置，具備： 曝光裝置本體，係藉能量束使基板曝光以在前述基板 上形成既定之圖案； 本體室，用以收容前述曝光裝置本體之至少一部分； 環境控制裝置，係將既定之氣體供應至前述本體室內 ，以控制前述本體室內之環境；以及 第1過濾裝置，係至少一個，配置在藉前述環境控制 裝置供應至前述本體室之前述氣體之通氣路徑的一部分， 自前述氣體中除去化學污染物質，且亦抑制通過後之前述 氣體的溫度變動於既定範圍內。 此處所謂的藉由前述環境控制裝置所供應至前述本體 室的前述氣體的通氣路徑，並不限於此於環境控制裝置與 本體室之間的通氣路徑，嚴格上係包含有環境控制裝置及 本體室內部之供氣路徑的一種槪念。 據此，自氣體中除去化學污染物質，且抑制通過後之 氣體的溫度變動於既定的範圍內的第1過濾氣裝置，係配 置在藉環境控制裝置供應至前述本體室之前述氣體之通氣 路徑的一部分。是故，包含有第1過濾裝置的下游側的通 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線"41^" (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ____ _B7_ — 五、發明說明（C) 氣路徑的空間內，形成可除去化學污染物質之環境氣氛’ 且亦能抑制藉環境控制裝置設定於目標溫度的氣體在通過 第1過濾氣裝置之後的溫度變動。亦即，能保持曝光裝置 本體週邊的環境氣氛於化學性之高潔淨度之狀態(化學潔淨 狀態），據此而能長時間地有效的抑制因光學構件的結霧而 產生的照度下降等的弊端。又，能有效的抑制供應至本體 室內的氣體之溫度變動幅度的增加。 此時’前述第1過濾裝置，能抑制通過後之前述氣體 的溫度變動，以將通過後之前述氣體相對於目標溫度的温 度誤差抑制在既定範圍內。此情形中，經發明者等的實驗 證實，能將通過第1過濾裝置後之氣體溫度，設定成能長 期維持曝光裝置之性能的溫度變動幅度的程度。 不過，如前所述，發明者等雖確定化學過濾裝置即係 使通過之氣體在通過後溫度變動幅度增加之主要因素，但 爲更進一步深入追究氣體通過過濾裝置後之溫度變動的主 要因素，發明者等經銳意地反覆硏究之結果，發現通過過 濾裝置前的濕度變動，對通過過濾器後的氣體溫度，帶來 了料想外的影響。 通過過濾器前的濕度變動，對通過過濾器後的氣體溫 度所帶來的影響之理由，可考量如下之情形。亦即，氣體 通過過濾裝置時，在過濾裝置與氣體之間形成平衡爲止， 過濾裝置與氣體間會進行水份的吸收與傳遞。此時，由於 水份自氣體移動至過濾裝置（吸附）時，過濾裝置產生吸附 熱，因此通過之氣體的溫度即上升。又，當水份自過濾裝 --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 A7 __B7 ____ 五、發明說明（b) (請先閱讀背面之注意事項再填寫本頁) 置移動至氣體(蒸發）時，蒸發熱會自過濾器散去，故通過 過瀘裝置之氣體的溫度即下降。因此，通過過濾部之氣體 的溫度，即使保持於既定的溫度範圍內，當通過過濾裝置 前之空氣中的溫度變動時，因熱的消長量亦變動，故過濾 裝置通過後之氣體的溫度即變動。 又，通過過濾裝置前的濕度變動，係對應設置本體室 的潔淨室內空氣的濕度變動。此處，爲縮小通過過濾裝置 前之溫度變動，亦考量在環境控制裝置附加有縮小濕度變 動的機能。但是，爲了要求能對通過過濾裝置後之氣體調 整於目標溫度，通過過瀘器前之濕度變動較潔淨室內之空 氣的濕度變動爲小。此種環境控制裝置爲調整較潔淨室內 空氣的濕度變動更小的濕度變動，其裝置成本將變高，且 裝置本身亦會大型化。 本發明之曝光裝置中，前述第1過濾裝置係備有一種 具有至少一個的過濾媒體之過濾器部，該過濾器部爲能實 施除去包含於前述氣體中的化學污染物質的同時，亦能對 前述氣體中的水份進行吸收及釋出。此時，若能將過濾器 部的氣體中的水份的吸收及釋出，抑制於既定之範圍的話 ，即能縮小來自通過過濾器部之前後其目標溫度之溫度誤 差的變動。 此時，前述過濾器部能具有至少2個的過濾媒體，該 2個過濾媒體爲以既定間隔而配置於沿著前述氣體通過方 向。此，不致降低化學污染物質的去除能力，且能抑制氣 體中的水份的吸收及釋出於既定範圍，形成可控制氣體之 _ 8_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 Λ7 __21_— 五、發明說明（1) 溫度變動之狀態。其理由如下。 由於至少2個的過濾媒體係以既定間隔沿氣體通過方 向配置，故在各過濾媒體的間隙中，形成有過濾媒體不存 在的部分（中間空間層）。於是’當氣體通過氣體通過方向 的第1個(或上游側的若干個)過濾媒體時，因與上述相同 的理由，會在各過濾媒體之間進行水份的吸收與傳遞，以 在氣體中之濕度較高時降低氣體中的濕度，而在氣體中之 濕度較低時提高氣體中的濕度。亦即，氣體的濕度變動係 趨近於既定値。另一方面，在氣體通過前述第1個過濾媒 介後的過濾媒體時，由於濕度成爲大致既定狀態，故氣體 中的水份量幾乎不產生變化，而僅自氣體中除去化學汙染 物質，且氣體的溫度亦幾乎不產生變化。亦即，在不降低 化學污染物質之除去能力的情形下，由於僅在氣體所通過 方向的第1個(或上游側的若干個)過濾媒體中產生氣體的 溫度變化，而能抑制氣體中的水份的吸收及釋出於既定範 圍，且能抑制氣體的溫度變動。 本發明之曝光裝置中，第1過濾裝置所具有的前述過 濾媒體的至少1個，其至少一部分的塡充率可設定得較其 他爲低。此情形下，因能抑制氣體中的水份的吸收及釋出 ，故能縮小通對第1過濾裝置後之氣體相對目標溫度的溫 度誤差。 此處，所謂的「過濾媒體的至少1個，其至少一部分 的塡充率係設定得較其他爲低」，除了當然包含同一過濾 媒體之部分區域的塡充率設定得較其他區域爲低之情形外 (請先閱讀背面之注意事項再填寫本頁) --- /OTA ^ 9Q7 ) 1233148 A7 ______B7 ___ 五、發明說明（^ ) ，亦包含有複數個過濾媒體時，各過濾媒體相互間之塡充 率相異的情形。 本發明之曝光裝置中，前述環境控制裝置可具備透過 前述第1過濾裝置來供應前述氣體至前述本體室內的氣體 供應用風扇，以及調整前述氣體的溫度於既定範圍內的溫 度調整裝置。此情形下，藉由溫度調整裝置而調整於既定 範圍內溫度之氣體，係以氣體供應用風扇供應至本體室內 。此時，自供應用風扇供應的氣體，透過通過後溫度變化 較小的第1過濾裝置供應至空間內。是故，能在充分地抑 制相對於目標溫度的溫度誤差之狀態下，對本體室內(詳言 之，爲第1過濾裝置的下游)供應充分除去化學污染物質的 化學潔淨氣體，而能將本體室內的化學性的環境條件及溫 度條件，控制於所要之條件下。 此情形下，前述溫度調整裝置，可具有將前述氣體供 應用風扇所供應之前述氣體予以冷卻的冷卻裝置。此時， 例如，在自外部供應被加熱至目標溫度以上的氣體時，藉 由冷卻裝置冷卻該氣體的措施，即能將第1過濾裝置通過 前的氣體溫度調整於既定範圍內。 此情形下，前述冷卻裝置，其溫度係不致在表面產生 結露程度的溫度。 本發明之曝光裝置，在溫度調整裝置爲備有冷卻裝置 時，前述溫度調整裝置，能進一步的具備將前述氣體供應 用風扇供應至前述本體室內之氣體予以加熱的加熱裝置。 此時，無論自外部供應之氣體溫度如何，皆能將第1過濾 -----___10___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7 1233148 BZ__ 五、發明說明（1 ) 裝置通過前之氣體溫度調整於既定範圍。 本發明之曝光裝置中，無論前述溫度調整裝置是否具 有冷卻裝置，皆能具有將前述氣體供應用風扇供應至前述 本體室之前述氣體予以加熱的加熱裝置。此情形下，在自 外部供應被冷卻至目標溫度以下的氣體時，藉加熱裝置來 加熱該氣體，即能將第1過濾裝置通過前之氣體溫度調整 於既定範圍內。 本發明之曝光裝置中，在前述本體室內，可設置能收 容前述曝光裝置本體的曝光室，在對前述曝光室供應前述 氣體的供應路徑中配置前述第1過濾裝置。此情形下’由 於除去化學污染物質、且將通過後之氣體的溫度變動抑制 於既定範圍內的第1過濾裝置，係配置於供應戔曝光室之 氣體的供應路徑中，因此經充分除去化學污染物質之化學 潔淨度爲高（化學性潔淨）的氣體，係在抑制溫度變動的狀 態下供應至曝光室內。是以，能使曝光裝置本體的週邊環 境氣氛成爲化學性潔淨之狀態。此外，第1過濾裝置中’ 由於通過後的氣體之溫度變動爲小，因此若在通過第1過 濾裝置之前，例如藉由環境控制裝置進行高精度的氣體之 溫度控制，即能將通過後之氣體的溫度變動於抑制在既定 範圍內。 本發明之曝光裝置中，前述曝光裝置本體係具有保持 前述基板的基板載台和測量該基板載台之位置的干涉’ 在對配置著前述基板載台和前述干涉器之前述本體室內的 一部分空間而供應前述氣體的供應路徑上，爲能配置前述 ___u_〆-- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ---------訂---------線- A7 1233148 __B7 五、發明說明（ft)) 第1過濾裝置。如此之情形下，可除去化學污染物質和可 抑制溫度變動的第1過濾裝置，因係配置於對配置著基板 載台和干涉器的本體室內的一部分空間供應氣體的供應路 徑上，故能有效地抑制由於空氣搖動(溫度游動）之干涉器 的測量誤差，特別是能以所需的精度實現具有精度須求的 基板載台的位置控制。 本發明之曝光裝置中，在前述本體室內，設有收容基 板搬送系統的基板搬送系統收容室，該基板搬送系統爲對 前述曝光裝置本體搬送前述基板且自前述曝光裝置本體搬 出前述基板者，而在供應至前述基板搬送系統收容室的前 述氣體的供應路徑上，能配置前述第1過濾裝置。此之情 形下，能使收容基板搬送系統的基板搬送系統收容室內， 成爲化學潔淨且溫度安定之狀態。此外，例如在基板上塗 覆易受化學污染物質影響的化學增強型光阻時，即使該基 板搬送系統收容室內，亦能有效地抑制化學增強型光阻之 表面難溶化現象的發生。 本發明之曝光裝置中，在前述本體室內，係設置有收 容著光罩搬送系統的光罩搬送系統收容室，該光罩搬送系 統爲對前述曝光裝置本體搬進形成有前述圖案的光罩且自 前述曝光裝置本體搬出前述光罩者，而在供應至前述光罩 搬送系統收容室的前述氣體的供應路徑上，能配置前述第 1過濾裝置。此情形下，能使收容光罩搬送系統的光罩搬 送系統收容室內，成爲化學性潔淨且溫度安定之狀態。 本發明之曝光裝置，能進一步的具備：至少收容前述 I______J2_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線-4^" (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ___________B7___________ 五、發明說明（[I) 環境控制裝置之一部分、且亦連接於前述本體室而與該本 體室同時構成前述氣體之循環路徑的機械室；以及與配置 於自前述本體室返回至前述機械室的排氣路徑上的前述第 1過濾裝置相較，該前述化學性污染物質的除去率較高的 至少1個的第2過濾裝置。此情形下，因第2過濾裝置係 配置於自本體室返回至機械室的排氣路徑上，故因曝光裝 置本體產生之脫氣所造成之氣體中的化學污染物質，經第 2過濾裝置有效率的除去之後，再度藉由機械室內收容之 至少1部分的環境控制裝置，透過第1過濾裝置而供應至 本體室內。因此，能將本體室內的曝光裝置本體週邊的環 境氣氛’維特於化學性潔淨度較高的狀態(化學性潔淨之狀 態），據此而能更長久而有效地抑制因光學構件的結霧所造 成之照度下降等弊端的產生。此外，藉由第2過濾裝置來 除去化學污染物質且形成化學性潔淨的氣體，係送入第i 過濾裝置。而且，自本體室返回至機械室的排氣路徑且即 使不考量溫度變動亦爲良好之處所，故即使通過後的氣體 的溫度變動極大，亦可藉由使用化學污染物質之除去能力 較大的過濾裝置，而能在無任何困難的情形下，將有效地 除去化學污染物質的化學性潔淨的氣體予以送入至第1過 濾裝置。因此，第1過濾裝置的壽命變得更長，經過長時 間使用亦無須替換。 本發明之曝光裝置，能進一步的具備：至少收容前述 環境控制裝置之一部分、且亦設有外氣輸入口的機械室； 及與配置於自前述外氣輸入口輸入的外氣通路上的前述第 --—------------- π 本紙張尺錢財國國家標準（CNS)A4規格（210 X 29f公釐） " --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ^-!-—- 五、發明說明（fi) 1過濾裝置相比，前述化學污染物質的除去率較高的至少1 個的第2過濾裝置。此情形下，第2過濾裝置因係配置在 自設於機械室的外氣輸入口輸入外氣的通路上’故Bb藉由 第2過濾裝置而輸入已除去化學性污染物質的化學性潔淨 外氣至裝置內。因此，能將本體室內的曝光裝置本體週邊 的環境氣氛，維持於化學性潔淨度爲高的狀態(化學性潔淨 狀態），據此而能更長久而有效地抑制因光學構件的結霧而 來的照度下降等的弊端的發生。此外，藉由第2過濾裝置 來除去化學污染物質且形成化學性潔淨的氣體，係送入第 1過濾裝置。而且，機械室內的外氣通路即使不考量溫度 變動亦爲良好之處所，故即使通過後的氣體的溫度變動極 大，亦可藉由使用化學污染物質的除去能力較大的過濾裝 置，而能在毫無困難的情形下，將有效地除去化學性污染 性物質的化學性潔淨氣體送入至第1過濾裝置。因此’第 1過濾裝置的壽命變得更長，經過長時間的使用亦無須替 換。 本發明之曝光裝置，在前述基板表面上，可塗覆化學 增強型光阻以作爲感光劑。此情形下，因能維持本體室內 於化學性潔淨之狀態，故亦能減低化學增強型光阻之表面 難溶化之現象。 此外，微影製程中，使用本發明之曝光裝置以進行曝 光處理，即能抑制因長時間的經過而造成光學構件的結霧 而來的照度下降等的弊端的發生，據此能在維持高量產率 (throughput)下生產性良好地製造高集積度的元件。是故， ______J4_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ---—__B7 ___ 五、發明說明（0 ) (請先閱讀背面之注意事項再填寫本頁) 從本發明之第2觀點視之，係提供一種使用本發明之曝光 裝置之兀件製造方法。 [圖示之簡單說明] 圖1係槪略地顯示本發明之一^實施形愚之曝光裝置之 全體構成的圖。 圖2係圖1之A-A線截面圖。 圖3係槪略地顯示與圖1之曝光裝置之溫度控制相關 之控制系統的方塊圖。 圖4係槪略地顯示使用圖1之化學過濾器CF2a，CF2b 之過濾裝置的構成圖。 圖5係槪略地顯示使用圖1之化學過濾器CFla，CFlb 之第1變溫抑制過濾器的構成圖。 圖6係槪略地顯示使用圖1之化學過濾器CFla，CFlb 之第2變溫抑制過濾器的構成圖。 圖7係用以說明製造本發明之元件製造方法之實施形 態的流程圖。 圖8係顯示圖7之步驟204之處理的流程圖。 [符號說明] CFla，CF2a，CFlb，CF2b 化學過濾器 12 室 14 機械室 16 曝光室 _________15 一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 A7 B7 五、發明說明（β) 18 標線片裝料室 20 晶圓裝料室 22 曝光裝置本體 26 連接部 28 照明光學系統 42,48,66 回送導管 46 回送部 54,72,74 感測器 56,62 加熱器 58,64 送風機 70 控制裝置 80 標線片室 86 機械臂 88 晶圓搬送裝置 90 噴出口 12〇ι 第1變溫抑制器 1202 第2變溫抑制器 124,134 過濾媒體 126 過濾器部 127 冷卻器 130 過濾裝置 --------1T---------$· (請先閱讀背面之注意事項再填寫本頁) [實施形態] 以下，根據圖1至圖6說明本發明之一實施形態。圖 _16_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐_) 1233148 A7 — -----— _______ 五、發明說明（丨0 1中，槪略顯不了一貫施形態之曝光裝置10的全體構成。 读曝光裝置10，具備有設於潔淨室內的地面F上的本 體室12、及與此本體室12相鄰配置的機械室14。 本體室12的內部，大致維持環境條件(潔淨度、溫度 、壓力等)於一疋，而在5亥內部空間內，設有機械室14側 的1個大空間16，及在該大空間16的機械室14相反端所 配置上下2段的2個小空間18，20等。其中，大空間16 係在其內部形成有收容曝光裝置本體22的曝光室。以下， 稱該大空間16爲曝光室。 上述一方的小空間18，係在其內部，從與曝光室16 的相反端開始，依序配置保管有複數片光罩的標線片的標 線片收納庫80、和由水平多關節型機械臂所構成的標線片 裝料器82等。藉由標線片裝料器82，而搬入標線片r至 構成曝光裝置本體的標線片載台RST上(容後述），並自標 線片載台RST上搬出。本實施形態中，係藉由此標線片收 納庫80和標線片裝料器82而構成了作爲搬送系統用的標 線片裝料系統，且該標線片裝料系統爲被收容於小空間18 。於此，以下稱小空間18爲標線片裝料室18。藉由該標 線片裝料室18而構成了光罩搬送系統收容室。 又，標線片裝料系統並不限於此於上述構成，例如使 用可收容複數片標線片的底部敝開型的密閉匣式（箱櫃)以 取代標線片收納庫80亦可。或是使用使搬送手臂滑動的機 構來作爲標線片裝料器亦可。此外，將標線片保管部(標線 片收納庫80)和標線片裝料器82配置於相異之空間亦可， _— _ 17 __ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---------線. 1233148 A7 ______Β7___ 五、發明說明（tL) 或是放置前述密閉匣式於標線片裝料室18的上部，並在維 持該氣密性的狀態下，啓開底部而得以使標線片能搬入至 標線片裝料室18內亦可。亦即，在小空間18係僅配置著 標線片裝料器亦可。 此外，他方的小空間20在其內部，收容有保管作爲複 數片基板之晶圓的晶圓搬送器84，對晶圓搬器84處理晶 圓進出動作的水平多關節型機械臂6，在該機械臂86與構 成曝光裝置本體22的基板載台的晶圓載台WST之間搬送 晶圓的晶圓搬送裝置88等。本實施形態中，係藉由此晶圓 搬送器84，機械臂86及晶圓搬送裝置88，而構成作爲基 板搬送系統的晶圓裝料系統，且該晶圓裝料系統爲被收容 於小空間20。以下，稱小空間20爲晶圓裝料室20。而藉 由該晶圓裝料室而構成了基板搬送系統收容室。 又，晶圓裝料系統並不限於此於上述之構成，例如僅 以多關節型的機械臂來構成晶圓裝料系統亦可，在晶圓裝 料室20內僅配置晶圓裝料器亦可。 上述曝光室16、標線片裝料室18、晶圓裝料室20等 ’係透過由不鏽鋼(SUS)或鐵氟龍等脫氣較少的材質所形成 之作爲供氣路徑的供氣管路24及可伸縮之蛇腹狀之連接部 26，而連接於機械室14。 收容於前述曝光室16的曝光裝置本體22，具備：含 有反射鏡Ml，M2的照明光學系統28，配置於該照明光學 系統28下方的投影光學系統PL，配置於該投影光學系統 PL與照明光學系統28之間、用以保持作爲光罩之標線片 _______18____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線"^1^" (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 _____B7 ___ 五、發明說明（ί/]) 的標線片載台RST，配置於投影光學系統PL下方、用以 保持作爲基板之晶圓W的晶圓載台WST，以及保持投影 光學系統PL、且搭載晶圓載台WST的本體柱30等。 照明光學系統28，除反射鏡Ml，M2外，亦包含光學 積分器、視野光圈（均未圖示）等，此等光學構件係以既定 之位置關係收容於未圖示之照明系統外殻內而構成。該照 明光學系統28，透過未圖示之環繞光學系統（中繼光學系 統)連接於未圖示之作爲光源的KrF準分子雷射(輸出波長 248nm)或ArF準分子雷射(輸出波長193nm)等的準分子雷 射。上述環繞光學系統之至少一部分，包含有被稱爲光束 匹配單元的光源與照明光學系統28之間的光軸調整用的光 學系統。此外，雖未圖示，但收容照明光學系28的照明系 統外殻，及收容環繞光學系統的框體(鏡筒），其內部係以 非惰性氣體(例如氮氣、氦氣等）加以洗淨，維持成潔淨度 極爲良好的狀態。 又，亦可配置照明光學系統28的至少一部分於曝光室 16的外部，並且，或單獨地將除了光源、環繞光學系統、 及照明光學系統28外所餘的一部分(例如晶圓載台WST等 )配置於與曝光室不同之的另外的框體內亦可。此時，上述 另一框體，可配置於曝光室的內部’亦可配置於曝光室外 。亦即，只要在曝光室內配置曝光裝置本體的至少一部分 即可，且配置於曝光室16內的構件或該構成並不受限。 前述本體柱30，係透過設於本體室12底面上的基盤 BP上方的複數個防振台32而加以支撐。該本體柱30，具 19__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ------------f------- 丨訂---------線· (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ___B7_ _ _ 五、發明說明（f) 有藉由防振台32加以支撐的主柱34、及豎立於該主柱34 上部的支持柱36。在構成主柱34的頂面的主框架上，投 影光學系統PL爲透過稱爲第1鋼材(invar)的未圖示之保持 構件而將該光軸方向保持於上下方向。而作爲該投影光學 系統PL於此係使用投影倍率爲1/4或1/5之縮小光學系統 。支持柱36係由下方支撐未圖示之照明系統外殻的至少一 部分。 晶圓載台WST，係在構成主柱34之底板的載台基座 上，藉由未圖示之平面馬達或線性馬達等的驅動裝置而被 驅動於2維方向。在該晶圓載台WST的上面，透過晶圓保 持器38以真空吸附等方式保持晶圓W。在晶圓載台WST 的XY面內的位置及旋轉量(偏位量、間距量、及旋轉量中 之至少1個），係透過設置於晶圓載台WST上之未圖示之 移動鏡，並藉由作爲干涉器的雷射干涉器IF，以例如0.5 〜lnm程度的分解能力加以測量。 前述標線片載台RST，係載置於未圖示之標線片基台 上，而該未圖示之標線片基台爲構成了設置於主框34的上 面的未圖示之稱爲第2鋼材的支持構件的頂部分。該標線 片載台RST係在曝光裝置本體22爲在進行靜止型曝光之 際，是爲一種可在水平面內進行微小驅動之構成，而在進 行掃描型曝光時，除上述外，更具有在既定的行程範圍可 驅動於既定的掃描方向之構成。 根據以上述構成之曝光裝置本體22,自未圖示之準分 子雷射射出的脈衝紫外光，藉由各種透鏡或反射鏡等所組 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)I can. Therefore, a filtering device (hereinafter, referred to as a "chemical filtering device") for removing chemical pollutants in a gas by a chemical adsorption method and a physical adsorption method is generally used. In the future, it is clear that semiconductor devices are required to achieve higher integration, and the exposure device is also required to achieve higher precision exposure in response to this. Therefore, it is required to further improve the performance of each component of the exposure device, and as a part of it, the temperature control performance of the environment control room is further improved. However, recently, it has been found that in order to perform temperature control in a room with a higher degree of accuracy, even if a temperature adjustment device such as an air conditioner is used, an air-conditioning gas such as air is used to change the temperature fluctuation range from the target temperature. When the temperature is controlled to be less than or equal to 値, the temperature fluctuation range with respect to the target temperature of the air to be sent increases in the environment control room when it is sent into the environment control room. In this case, when the required exposure accuracy becomes strict, temperature fluctuations are likely to cause obstacles to its realization. According to the estimation of the inventors of the present case, the increase in the temperature fluctuation range ′ is due to the strict requirement of the exposure accuracy, so it is presumed that it should be a constituent element for improving the exposure accuracy, as its main factor. Therefore, under this assumption, various experiments were repeatedly performed. As a result, it was found that after passing through the aforementioned chemical filtration device, the temperature fluctuation range of the air increased. [Problems to be Solved by the Invention and Means of Solving] ----- 5____ This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------------- ------ Order --------- line (please read the notes on the back before filling this page) 1233148 A? ________B7______ V. Description of the invention (+) The present invention is based on the above inventors etc. The first purpose of the invention is to provide an exposure device that can simultaneously suppress the disadvantages of illuminance reduction caused by the turbidity of optical components and increase in the temperature fluctuation range. The second object of the present invention is to provide an Element manufacturing method capable of manufacturing highly integrated micro-elements with good productivity. The exposure device of the first invention of the present case includes: an exposure device body that exposes a substrate by an energy beam to form a predetermined pattern on the substrate; a body room for housing at least a part of the exposure device body; an environmental control device, Supplying a predetermined gas into the main body chamber to control the environment in the main body chamber; and a first filter device, which is at least one, arranged in a part of a ventilation path of the gas supplied to the main body chamber by the environmental control device, since Chemical contamination is removed from the gas, and the temperature variation of the gas after passing is also suppressed within a predetermined range. The so-called ventilation path of the gas supplied to the main body chamber by the aforementioned environmental control device is not limited to the ventilation path between the environmental control device and the main body chamber, and strictly includes the environmental control device and the main body. An obsession with the air supply path inside the room. According to this, the first filter gas device that removes chemical pollutants from the gas and suppresses the temperature variation of the passed gas within a predetermined range is a ventilation path of the gas that is supplied to the body chamber by the environmental control device. a part of. Therefore, the paper size on the downstream side of the 1st filter unit is included. The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) ---------------- ---- Order --------- line " 41 ^ " (Please read the precautions on the back before filling this page) 1233148 A7 ____ _B7_ — V. Description of the invention (C) Space of the gas path In addition, an environmental atmosphere capable of removing chemical pollutants is formed, and the temperature change of the gas set at the target temperature by the environmental control device after passing through the first filter gas device can be suppressed. That is, the environmental atmosphere around the exposure device body can be kept in a chemically high-cleanness state (chemically clean state), and accordingly, the illuminance degradation caused by the fogging of the optical member can be effectively suppressed for a long time. Disadvantages. In addition, it is possible to effectively suppress an increase in the temperature fluctuation range of the gas supplied into the main body chamber. In this case, 'the first filtering device can suppress the temperature fluctuation of the gas after passing through, so as to suppress the temperature error of the gas after passing through with respect to the target temperature within a predetermined range. In this case, experiments by the inventors have confirmed that the temperature of the gas after passing through the first filtering device can be set to a degree that can maintain the temperature fluctuation range of the performance of the exposure device for a long period of time. However, as mentioned above, although the inventors determined that the chemical filtration device is the main factor that increases the temperature fluctuation range of the passing gas after passing, in order to further investigate the main factor of the temperature variation of the gas after passing through the filtering device, As a result of intensive research, the inventors found that the change in humidity before passing through the filtering device has an unexpected effect on the temperature of the gas after passing through the filter. Reasons for the influence of humidity fluctuations before the filter on the temperature of the gas after passing the filter can be considered as follows. That is, when gas passes through the filter device, until the balance between the filter device and the gas is reached, water is absorbed and transferred between the filter device and the gas. At this time, when water moves from the gas to the filter device (adsorption), the filter device generates adsorption heat, so the temperature of the passing gas rises. In addition, when the moisture is self-filtering, the -------- order --------- line (please read the precautions on the back before filling this page) The wood paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1233148 A7 __B7 ____ V. Description of the invention (b) (Please read the precautions on the back before filling this page) When moving to gas (evaporation), the evaporation heat will be dissipated from the filter Therefore, the temperature of the gas passing through the tritium device will decrease. Therefore, even if the temperature of the gas passing through the filtering unit is maintained within a predetermined temperature range, when the temperature in the air before passing through the filtering device changes, the amount of heat fluctuation also changes. Therefore, the temperature of the gas after passing through the filtering device is change. The humidity fluctuation in front of the filtering device corresponds to the humidity fluctuation of the clean room air in which the main body room is installed. Here, in order to reduce the temperature fluctuation before passing through the filtering device, it is also considered that the function of reducing the humidity change is added to the environmental control device. However, in order to adjust the gas after passing through the filter device to the target temperature, the humidity fluctuation before passing through the filter is smaller than the humidity fluctuation of the air in the clean room. Such an environmental control device adjusts the humidity variation smaller than the humidity variation of the air in the clean room, the device cost will increase, and the device itself will become large. In the exposure apparatus of the present invention, the first filter device is provided with a filter unit having at least one filter medium. The filter unit is capable of removing chemical contaminated substances contained in the gas, and can also perform The water in the gas is absorbed and released. At this time, if the absorption and release of water in the gas of the filter unit can be suppressed to a predetermined range, the fluctuation of the temperature error from the target temperature before and after passing through the filter unit can be reduced. In this case, the filter unit may have at least two filter media, and the two filter media are arranged at predetermined intervals in the gas passing direction. Therefore, it will not reduce the ability to remove chemical pollutants, and can inhibit the absorption and release of water in the gas to a predetermined range, forming a controllable gas _ 8_____ This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 1233148 Λ_ _21_ — V. Description of the invention (1) State of temperature fluctuation. The reason is as follows. Since at least two filter media are arranged along the gas passing direction at a predetermined interval, in the gap between the filter media, a portion (intermediate space layer) where the filter media does not exist is formed. So 'when the gas passes through the first (or several upstream) filter media in the gas passing direction, for the same reason as above, the water will be absorbed and transmitted between the filter media in order to pass in the gas When the humidity is high, the humidity in the gas is reduced, and when the humidity is low, the humidity in the gas is increased. That is, the humidity variation of the gas is approaching a predetermined level. On the other hand, when the gas passes through the filter medium after the first filter medium, since the humidity becomes almost a predetermined state, the amount of water in the gas hardly changes, and only chemical pollutants are removed from the gas, and the There is also little change in temperature. That is, without reducing the ability to remove chemical pollutants, the temperature change in the gas is generated only in the first (or several upstream) filter media in the direction in which the gas passes, so that the The absorption and release of water is within a predetermined range, and the temperature change of the gas can be suppressed. In the exposure apparatus of the present invention, the charge rate of at least a part of at least one of the aforementioned filter media included in the first filter device can be set to be lower than that of other filter media. In this case, since the absorption and release of water in the gas can be suppressed, it is possible to reduce the temperature error of the gas relative to the target temperature after passing through the first filter device. Here, the so-called "at least one filter medium, the charge rate of at least a part of which is set to be lower than others", except that, of course, the charge rate of some areas containing the same filter medium is set to be lower than other areas Outside the situation (please read the precautions on the back before filling this page) --- / OTA ^ 9Q7) 1233148 A7 ______B7 ___ 5. When the invention description (^) also includes a plurality of filter media, each filter media塡 Different charging rates. In the exposure apparatus of the present invention, the environmental control device may include a gas supply fan that supplies the gas to the body chamber through the first filter device, and a temperature adjustment device that adjusts a temperature of the gas within a predetermined range. In this case, the gas whose temperature is adjusted within a predetermined range by the temperature adjustment device is supplied into the main body chamber by a gas supply fan. At this time, the gas supplied from the supply fan is supplied into the space through the first filter device having a small temperature change after passing. Therefore, it is possible to supply a chemically clean gas that sufficiently removes chemical pollutants to the main body chamber (more specifically, downstream of the first filtering device) while sufficiently suppressing temperature errors with respect to the target temperature, and the main body can be The indoor chemical environmental conditions and temperature conditions are controlled under the desired conditions. In this case, the temperature adjustment device may include a cooling device that cools the gas supplied from the application fan. At this time, for example, when a gas heated above the target temperature is supplied from the outside, the temperature of the gas before the first filtering device can be adjusted within a predetermined range by cooling the gas by a cooling device. In this case, the temperature of the cooling device is a temperature that does not cause condensation on the surface. In the exposure device of the present invention, when the temperature adjustment device is provided with a cooling device, the temperature adjustment device can further include a heating device for heating the gas supplied from the gas supply fan to the body chamber. At this time, regardless of the temperature of the gas supplied from the outside, the first filter can be filtered -----___ 10___ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------- -Order --------- line (please read the precautions on the back before filling this page) A7 1233148 BZ__ 5. Description of the invention (1) The gas temperature before the device is passed is adjusted to a predetermined range. In the exposure device of the present invention, regardless of whether the temperature adjustment device has a cooling device, the exposure device can be provided with a heating device that heats the gas supplied from the gas supply fan to the body chamber. In this case, when the gas cooled below the target temperature is supplied from the outside, the gas temperature can be adjusted within a predetermined range by heating the gas by a heating device. In the exposure apparatus of the present invention, an exposure chamber capable of accommodating the body of the exposure apparatus may be provided in the body chamber, and the first filter device may be disposed in a supply path for supplying the gas to the exposure chamber. In this case, since the first filtering device that removes chemically contaminated substances and suppresses the temperature variation of the passed gas within a predetermined range is disposed in the supply path of the gas to the radon exposure chamber, the chemical pollution is sufficiently removed. Gases with high chemical cleanliness (chemically clean) are supplied into the exposure chamber while suppressing temperature fluctuations. Therefore, the surrounding atmosphere of the exposure device body can be chemically cleaned. In addition, in the first filtering device, since the temperature variation of the gas after passing is small, if the temperature of the gas is controlled with high accuracy by the environmental control device before passing through the first filtering device, for example, the gas after the passing can be passed. The temperature fluctuation of the gas is suppressed within a predetermined range. In the exposure apparatus of the present invention, the exposure apparatus of the present system includes a substrate stage holding the substrate and measuring interference of the position of the substrate stage. A part of the space in the main body chamber where the substrate stage and the interferometer are arranged. On the supply path to supply the aforementioned gases, the aforementioned ___u_u can be configured-This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page ) --------- Order --------- Line- A7 1233148 __B7 V. Description of the invention (ft)) The first filter device. In this case, the first filtering device capable of removing chemical contaminants and suppressing temperature fluctuations is effective because it is disposed on a supply path for supplying gas to a part of the space in the main body chamber where the substrate stage and the interferometer are arranged. In order to suppress the measurement error of the interferometer due to air shaking (temperature swimming), in particular, the position control of the substrate stage with the required accuracy can be realized with the required accuracy. In the exposure apparatus of the present invention, a substrate transfer system storage chamber that accommodates a substrate transfer system is provided in the main body chamber. The substrate transfer system is for transferring the substrate to the exposure apparatus body and removing the substrate from the exposure apparatus body. The first filter device can be arranged on a supply path of the gas supplied to the substrate transfer system storage chamber. In this case, the substrate transfer system storage chamber containing the substrate transfer system can be chemically cleaned and the temperature can be stabilized. In addition, for example, when a substrate is coated with a chemically-enhanced photoresist that is susceptible to chemical contamination, even if the substrate is transported in the storage room of the substrate, the surface of the chemically-enhanced photoresist can be effectively prevented from being dissolved. In the exposure apparatus of the present invention, a photomask transporting system storage room containing a photomask transporting system is provided in the main body chamber, and the photomask transporting system is for carrying in the photomask with the aforementioned pattern formed on the main body of the exposure apparatus and A person who has carried out the photomask from the main body of the exposure apparatus can arrange the first filter device on a supply path of the gas supplied to the storage chamber of the photomask transfer system. In this case, it is possible to make the photomask transfer system storage chamber in which the photomask transfer system is stored into a chemically clean and stable temperature. The exposure device of the present invention can further include: at least the aforementioned I____J2_ This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ---------------- ---- Order --------- line-4 ^ " (Please read the precautions on the back before filling this page) 1233148 A7 ___________B7___________ V. Description of the Invention ((I) Part of the Environmental Control Device, And a machine room which is also connected to the main body chamber and constitutes the circulation path of the gas simultaneously with the main body chamber; and the first filter device arranged on the exhaust path returning from the main body chamber to the mechanical chamber, At least one second filtering device having a high removal rate of the chemical pollutant. In this case, since the second filter device is disposed on the exhaust path from the main body room to the machine room, the chemical pollutants in the gas caused by the degassing generated by the exposure device body are provided by the second filter device. After the efficiency is removed, it is again supplied to the main body room through the first filter device through the environmental control device contained in at least one part of the machine room. Therefore, the ambient atmosphere around the main body of the exposure device in the main body can be maintained in a state with a high degree of chemical cleanliness (a state of chemical cleanliness), which can effectively and effectively suppress the fogging of the optical member. The disadvantages such as the decrease of the illumination. In addition, the second filter device removes chemically polluted substances and forms a chemically clean gas, and sends it to the i-th filter device. In addition, the exhaust path from the main body room to the machine room is good even if temperature fluctuations are not taken into consideration. Therefore, even if the temperature of the gas after passing has a large temperature fluctuation, it can be removed with a large amount of chemical pollutants. The filtering device can send a chemically clean gas that effectively removes chemical pollutants to the first filtering device without any difficulty. Therefore, the life of the first filter device becomes longer, and there is no need to replace it after a long period of use. The exposure device of the present invention can further include: a machine room that houses at least a part of the aforementioned environmental control device and also has an external air input port; and the above-mentioned external air path arranged from the external air input port Chapter --------------- π Paper Ruler National Standard (CNS) A4 Specification (210 X 29f mm) " ----------- --------- Order --------- line (please read the precautions on the back before filling this page) 1233148 A7 ^-! ---- 5. Description of the invention (fi) 1 filter At least one second filtering device having a higher removal rate of the chemical pollutants compared to the device. In this case, since the second filter device is disposed on the path through which the external air is input from the external air input port provided in the machine room, the Bb uses the second filter device to input the chemically cleaned material from which chemical pollutants have been removed. Into the device. Therefore, the ambient atmosphere around the main body of the exposure device in the main body can be maintained in a state with a high degree of chemical cleanliness (chemically clean state), and the occurrence of fogging from the optical member can be effectively suppressed for a longer period of time. The disadvantages such as the decrease in illumination occur. In addition, the second filtering device removes chemically polluted substances and forms a chemically clean gas, which is sent to the first filtering device. In addition, the outside air passage in the machine room is a good place even if temperature fluctuations are not taken into consideration. Therefore, even if the temperature of the gas after it passes is extremely large, it can be used in a filter device with a large removal capacity of chemical pollutants. Without any difficulty, the chemical clean gas which effectively removes the chemical pollutants is sent to the first filtering device. Therefore, the life of the 'first filtering device becomes longer, and there is no need to replace it after a long period of use. In the exposure apparatus of the present invention, a chemically-enhanced photoresist can be coated on the surface of the substrate as a photosensitizer. In this case, it is possible to maintain the chemically clean state in the main body chamber, so that the surface of the chemically-enhanced photoresist can hardly be dissolved. In addition, in the lithography process, using the exposure device of the present invention to perform exposure processing can suppress the occurrence of disadvantages such as illuminance reduction caused by fogging of optical components due to long-term elapse, and thus can maintain high A high-integrity device is manufactured with good productivity at a throughput. Therefore, ______J4_ This paper size applies to China National Standard (CNS) A4 specification (210 x 297 mm) -------------------- Order ------ --- line (please read the notes on the back before filling this page) 1233148 A7 -----__ B7 ___ V. Description of the invention (0) (Please read the notes on the back before filling this page) From a second viewpoint, it is to provide a method for manufacturing a component using the exposure apparatus of the present invention. [Brief description of the figure] Fig. 1 is a diagram schematically showing the overall configuration of an exposure apparatus according to one embodiment of the present invention. Fig. 2 is a sectional view taken along the line A-A in Fig. 1. FIG. 3 is a block diagram schematically showing a control system related to temperature control of the exposure apparatus of FIG. 1. FIG. FIG. 4 is a schematic diagram showing a configuration of a filtering device using the chemical filters CF2a and CF2b of FIG. 1. FIG. FIG. 5 is a diagram schematically showing a configuration of a first temperature-change suppression filter using the chemical filters CFla and CFlb of FIG. 1. FIG. FIG. 6 is a diagram schematically showing a configuration of a second temperature-change suppression filter using the chemical filters CFla and CFlb of FIG. 1. FIG. Fig. 7 is a flowchart for explaining an embodiment of a method for manufacturing a component according to the present invention. FIG. 8 is a flowchart showing the processing of step 204 in FIG. [Symbols] CFla, CF2a, CFlb, CF2b chemical filters 12 chambers 14 machinery chambers 16 exposure chambers _________15 a paper size applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 1233148 A7 B7 V. Invention Explanation (β) 18 Graticule loading chamber 20 Wafer loading chamber 22 Exposure device body 26 Connection section 28 Illumination optical system 42, 48, 66 Return duct 46 Return section 54, 72, 74 Sensor 56, 62 Heating 58, 64 Blower 70 Control device 80 Marking line chamber 86 Robot arm 88 Wafer transfer device 90 Ejection port 12mm First temperature suppressor 1202 Second temperature suppressor 124,134 Filter media 126 Filter unit 127 Cooler 130 Filter Device -------- 1T --------- $ · (Please read the precautions on the back before filling in this page) [Embodiment] The following describes the present invention with reference to FIGS. 1 to 6 An embodiment. Figure _16_ This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm_) 1233148 A7 — -----— _______ V. Description of the invention The overall configuration of the exposure apparatus 10. The reading exposure apparatus 10 includes a body chamber 12 provided on the floor F in a clean room, and a machine chamber 14 disposed adjacent to the body chamber 12. The inside of the body chamber 12 is substantially maintained. The environmental conditions (cleanliness, temperature, pressure, etc.) are all in one place. In the internal space of the Haihai, a large space 16 on the side of the machine room 14 is provided, and the upper and lower sides of the machine room 14 on the large space 16 are arranged up and down There are two small spaces 18, 20, etc. in the second section. Among them, the large space 16 is an exposure chamber in which the exposure device body 22 is formed. The large space 16 is hereinafter referred to as the exposure chamber. Tied inside, starting from the opposite end to the exposure chamber 16, a reticle storage 80 in which reticle with a plurality of photomasks is stored, and a reticle composed of a horizontal multi-joint robot arm are arranged in this order. Loader 82, etc. With the reticle loader 82, the label is moved into The thread r is placed on the reticle stage RST (to be described later) constituting the main body of the exposure device, and is carried out from the reticle stage RST. In this embodiment, the reticle storage 80 and the reticle are used for this purpose. The sheet loader 82 constitutes a reticle loading system as a conveying system, and the reticle loading system is housed in a small space 18. Herein, the small space 18 is hereinafter referred to as reticle loading Chamber 18. The reticle loading chamber 18 constitutes a reticle conveying system storage chamber. The reticle loading system is not limited to the above configuration, and for example, a bottom portion that can accommodate a plurality of reticle is used. The open-closed closed box type (cabinet) may be used instead of the reticle storage 80. Alternatively, a mechanism for sliding the transport arm may be used as the reticle loader. In addition, the reticle storage unit may be used. (Reticle storage 80) and reticule loader 82 can be arranged in different spaces. _— _ 17 __ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ( Please read the notes on the back before filling this page) -------- Order --------- line. 1233148 A7 ______ Β7 ___ 5 Description of the invention (tL) Or the aforementioned closed box type is placed on the upper part of the reticule loading chamber 18, and while maintaining the airtightness, the bottom is opened to enable the reticule to be loaded into the reticule. It is also possible in the material chamber 18. That is, only a reticle loader may be arranged in the small space 18 series. In addition, in the other small space 20, a crystal storing a wafer serving as a plurality of substrates is housed inside. The round conveyor 84 is a horizontal articulated robot arm 6 that handles the wafer loading and unloading operations on the wafer conveyor 84, and transfers wafers between the robot arm 86 and the wafer stage WST constituting the substrate stage of the exposure apparatus body 22. Wafer transfer device 88 and the like. In this embodiment, a wafer loading system as a substrate transfer system is constituted by the wafer transfer device 84, the robot arm 86, and the wafer transfer device 88, and the wafer loading system is housed in a small Space 20. Hereinafter, the small space 20 is referred to as a wafer loading chamber 20. The wafer loading chamber constitutes a substrate transfer system storage chamber. In addition, the wafer loading system is not limited to the configuration described above. For example, the wafer loading system may be constituted only by a multi-joint robot arm. Only the wafer loading device is arranged in the wafer loading chamber 20. Yes. The above-mentioned exposure chamber 16, reticle loading chamber 18, wafer loading chamber 20, etc., are provided through a gas supply pipe formed as a gas supply path formed by a material that is less degassed, such as stainless steel (SUS) or Teflon. 24 and the telescopic bellows-shaped connecting portion 26 are connected to the machine room 14. The exposure apparatus main body 22 housed in the exposure chamber 16 includes an illumination optical system 28 including mirrors M1 and M2, a projection optical system PL disposed below the illumination optical system 28, and the projection optical system PL and the illumination optics. Between the systems 28, used to maintain the reticle as a photomask _______18____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------- ------ Order --------- line " ^ 1 ^ " (Please read the notes on the back before filling this page) 1233148 A7 _____B7 ___ V. Description of the invention (ί /]) The reticle stage RST is disposed below the projection optical system PL, and is used to hold a wafer stage WST as a substrate W, and a main body pillar 30 that holds the projection optical system PL and carries the wafer stage WST. The illumination optical system 28 includes, in addition to the mirrors M1 and M2, an optical integrator, a field diaphragm (none of which is shown), and the like. These optical components are housed in a predetermined positional relationship in a housing of an illumination system (not shown). While posing. The illumination optical system 28 is connected to a KrF excimer laser (output wavelength: 248 nm) or ArF excimer laser (output wavelength: 193 nm) as a light source (not shown) through a surrounding optical system (relay optical system) (not shown). And other excimer lasers. At least a part of the surrounding optical system includes an optical system for adjusting an optical axis between a light source called a beam matching unit and the illumination optical system 28. In addition, although not shown, the housing of the illumination system housing the illumination optical system 28 and the frame (lens barrel) housing the optical system are cleaned with a non-inert gas (eg, nitrogen, helium, etc.) inside. To maintain a very clean state. In addition, at least a part of the illumination optical system 28 may be disposed outside the exposure chamber 16, or a part other than the light source, the surround optical system, and the illumination optical system 28 (for example, the wafer stage WST) may be separately provided. It may be arranged in another frame different from the exposure chamber. At this time, the other frame mentioned above may be arranged inside the exposure chamber 'or outside the exposure chamber. That is, as long as at least a part of the exposure apparatus main body is arranged in the exposure chamber, the member or the configuration arranged in the exposure chamber 16 is not limited. The main body column 30 is supported by a plurality of anti-vibration tables 32 provided above the base plate BP on the bottom surface of the main body chamber 12. The body column 30 with 19__ This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) ------------ f ------- 丨 order- ------- Line · (Please read the precautions on the back before filling this page) 1233148 A7 ___B7_ _ _ V. Description of the invention (f) The main column 34 supported by the anti-vibration table 32 and the erection A support column 36 is provided on the upper portion of the main column 34. On the main frame constituting the top surface of the main column 34, the projection optical system PL is configured to hold the optical axis direction in the vertical direction through a not-shown holding member called a first steel (invar). As the projection optical system PL, a reduction optical system with a projection magnification of 1/4 or 1/5 is used here. The supporting column 36 supports at least a part of a lighting system housing (not shown) from below. The wafer stage WST is mounted on a stage base constituting the bottom plate of the main column 34, and is driven in a two-dimensional direction by a driving device such as a planar motor or a linear motor (not shown). On the upper surface of the wafer stage WST, the wafer W is held by the wafer holder 38 by vacuum suction or the like. The position and rotation amount (at least one of the offset amount, the pitch amount, and the rotation amount) in the XY plane of the wafer stage WST is through a moving mirror (not shown) provided on the wafer stage WST, and The laser interferometer IF, which is an interferometer, measures the resolution with a resolution of about 0.5 to 1 nm, for example. The reticle stage RST is placed on a reticle base which is not shown, and the reticle base which is not shown is a name (not shown) provided on the upper side of the main frame 34. It is the top part of the supporting member of the second steel. This reticle stage RST is a structure that can perform micro-driving in the horizontal plane when the exposure device body 22 is performing a static exposure, and when scanning exposure is performed, in addition to the above, A predetermined stroke range can be driven in a predetermined scanning direction. According to the exposure device body 22 configured as described above, the pulsed ultraviolet light emitted from an excimer laser (not shown) is assembled by various lenses or reflectors. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page)
-· I ϋ n 1 I mate n 一-OJ n n ϋ 1_1 I I «^1 n n n l n n I n n ϋ n Hi ϋ n ϋ n n ϋ ϋ I— I 1233148 A7 B7___ - 一 五、發明說明（L ) 成的照明光學系統28加以整形成所需之大小、及均勻的照 度，照射於形成有既定圖案的標線片R ’該標線片R上形 成之圖案透過投影光學系統PL，縮小轉印於晶圓載台 WST上所保持之晶圓W上的各曝光照射區域。 本實施形態中，晶圓W係使用例如在其表面塗覆作爲 感光劑之正型化學增強型的光阻。 在本體室12內的前述供氣管路24的一端(機械室14 側的端部），配置有作爲第1過濾裝置的化學過濾器CFla 。又，有關該化學過濾器CFla的構成容後詳述。 供氣管路24之他端側，分岐爲2個，其中一方之分岐 路24a爲連結於標線片裝料室18，且在該標線片裝料室18 側的噴出口的部分，設有用以除去流入至標線片裝料室18 內的空氣中的微粒（particle)的ULPA過濾器（ultra low penetration air-filter)，及由過濾板所構成的過濾箱AF1。 此外，在與標線片裝料室18的過濾箱AF1的相反側，係 設置著回送部40，且作爲排氣路徑的回送導管42的一端 ，爲連接於該回送部40的外側部分，而該回送導管42的 他端側係連接於機械室14的底面的一部分。 於前述分岐路24a，進一步設有分岐路24c，該分岐路 24c連接於晶圓裝料室20，在該晶圓裝料室20側的噴出口 部分，設有用以除去流入至晶圓裝料室20內之空氣中微粒 之作爲空氣過濾器的ULPA過濾器，及由過濾器氣室形成 的過濾箱AF2。此外，在與晶圓裝料室20的過濾箱AF2 的相反側設有回送部44，而在與該回送部44的晶圓裝料 __21___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I-------------訂------— II (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ____ —_ B7___ 五、發明說明（/) 室20的相反側，則設有連通於回送導管42的排氣口。 此外，前述另一分岐路24b係連接於除去流入至曝光 室16內的空氣中微粒的ULPA，及由過濾器氣室形成的過 濾箱AF3，而該曝光室16爲配置於形成於標線片裝料室 18的曝光室16的交界部的噴出口 90的標線片裝料室18 側。來自噴出口 90的均勻氣流爲得以經由側流而送入至曝 光室16的上部空間。在形成噴出口 90的標線片裝料室18 與曝光室16的交界部分，如圖1之A-A線截面圖的圖2 所示，除了標線片搬送區域92之外，其週圍配置有複數個 過濾箱AF3。 又，在曝光室16底部的機械室14側，如圖1所示， 設有回送部46，而在該回送部46下方的室12底部壁面， 形成有連接於排氣路徑用的回送導管48 —端側的排氣口， 回送導管48的他端側則連接於機械室14底面的一部分。 在前述機械室14底部之本體室12的相反側，形成有 作爲外氣擷取口之OA 口 50，於對向該〇A 口 50處設有作 爲第2過濾裝置的化學過濾器CF2b。本體室12內、特別 是曝光室16內，爲了維持潔淨度，係相對外部恆維持於正 壓，因此空氣會自本體室12的前面等、或未圖示的線上界 面部分等處漏至外部，故爲了擷取該流失份的外氣’而設 置OA 口 50。又，本實施形態中，因居於化學增強型光阻 之所謂T模型(shape)對應等之目的的考量，故透過〇A 口 50以除去被擷取至裝置內部空氣中的化學性污染物質(雜 質)而只取入潔淨空氣至裝置內，因此，在0A 口 50部分 __22________ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂---------線#_ (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 _-__21--- 五、發明說明（yj) 設置化學過濾器CF2。又，有關該化學過濾器CF2b之構 成等，容後詳述。 在機械室14內部高度方向中央之略下側位置，設有作 爲冷卻裝置之冷卻器(乾式線圈)52。該冷卻器52的出口處 ，配置有用以檢測冷卻器表面溫度的第1溫度感測器 該第1溫度感測器54的檢測値係供應至控制裝置70(圖1 中未圖示，參考圖3)。 機械室14內之空氣通路的冷卻器52的上方，自冷卻 器開始間隔既定之間隔配置有作爲加熱裝置之第1加熱器 56。在第1加熱器56上方之機械室Η的出口處，配虞有 作爲氣體供應用風扇的第1送風機58 ° 此外，在機械室14內空氣通路之第1加熱器56下方 ，設有分岐路60，而從下方通過冷卻器52到達上方約1/5 的空氣係流入該分岐路60。該分岐路6〇的機械室1/4側 的端部，係由可伸縮之蛇腹狀構件6〇a所構成。自分岐路 6〇之蛇腹狀構件60a起與機械室I4相反側的部分，係配 置於曝光室16內。在分岐路60內，依序配置有作爲加熱 裝置的第2加熱器62、及作爲氣體供給用風扇的第2透風 機64，而在該第2送風機64之機械室14相反側，形成有 對晶圓載台WST附近噴出空氣的噴出口。又，冷卻器52 、及第2加熱器62構成了溫度調整裝置，而藉由該溫度調 整裝置、第1送風機58、第2送風機64、及其控制系統等 構成了作爲環境控制裝置的空調裝置。本實施例中，雖藉 由環境控制裝置將通過過濾裝置的氣體，設定爲相對濕度 —_- _ 9^__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) • --------訂--------- 1233148 A7 _______B7 —________ 五、發明說明（>V) 爲50%左右、溫度爲23°C前後，但只要將通過過濾器的氣 體設定爲相對濕度30〜70%、溫度20〜30°C之間即可。 位於晶圓載台WST附近、由第2送風機送出之空氣的 噴出口處，配置有作爲第1過濾裝置的化學過濾器CFlb、 與ULPA過濾器與過濾器氣室所構成的過濾箱AF4。與此 等化學過濾器CFlb、過濾箱AF4所設置之噴出口對向， 於曝光室16靠近晶圓裝料室20處，配置有作爲排氣路徑 的回送導管66 —端的開口端，而該回送導管66之另一端 ，則連接於機械室14底面的一部分。又，有關化學過濾器 CFlb之構成等容後詳述。 在連接前述3個回送導管42, 48, 66的機械室14底面 的一部分，形成有開口，與此開口部對向、設有作爲第2 過濾裝置的化學過濾器CF2a。該化學過濾器CF2a係透過 設置於機械室14之未圖示的開閉門，而得以易於進出。又 ，有關該化學過濾器CF2a的構成等容後詳述。 此外，機械室14內之冷卻器52的下方，配置有排水 盤68。 在前述本體室12內之前述供氣管路24之分岐部靠近 機械室14處，配置有用以檢測供氣管路24內部之空氣溫 度的第2溫度感測器72。該第2溫度感測器72的檢測値 係供應至控制裝置70(圖1中未圖示，參閱圖3)。 此外，在化學過濾器CFlb的上游側，設有用以檢測 自第2送風機64送出之空氣之溫度的第3溫度感測器74 。該第3溫度感測器74的檢測値係供應至控制裝置70(圖 _24_____— 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂--------線 (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 _______B7___ 五、發明說明（>")) 1中未圖示，參閱圖3)。 圖3係簡略地顯示與空調裝置之溫度控制相關之控制 系統的構成。該控制系統’係以微電腦（或工作站)構成的 控制裝置爲主而構成。 其次，就與形成於機械室14底面的一部分對向設置的 前述化學溫濾器CF2a、與0A 口 50對向配置的前述化學 過濾器CF2b之構成例，根據圖4加以說明。 圖4，係以示意方式顯示使用化學過濾器CF2b，CF2b 的過濾裝置130。該圖4所示之過濾裝置13〇，具備：具有 除去化學污染物質之性質的過濾媒體134,與用以保持該 過濾媒體134的保持框132。 前述保持框132,係相對氣體通過方向之垂直截面爲 矩形的框狀構件，在空氣通過方向的兩側面(圖4中紙面左 右方向的兩端面)形成有開口部。 前述過濾媒體134，係以保持框132內部通過保持框 132內的氣體(空氣)能全部通過之狀態(氣密狀態)加以保持 。作爲該過濾裝置130中之過爐媒體134，此處，係使用 蜂巢狀構造的碳纖維。 又，如圖4所示，過濾媒體134係以&表示空氣的通 過方向的寬度，以d表示其塡充率，各値均綜合性地考量 過濾裝置130之化學性污染物値的除去能力、大小、及設 置空間等來決定。 其次，說明有關設置於本體室12內的供氣管路24的 一^端之弟1過爐^置的化學過滤器CF1 a，及設置於晶圓載 ______— — ___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 41^ (請先閱讀背面之注意事項再填寫本頁) I 1233148 A7 ____B7 _____ 五、發明說明 台WST附近的化學過濾器CFib的構成例等。 作爲化學過濾器CFla，CFlb，例如可使用圖5所示之 第1變溫抑制化學過濾器12(^(以下，方便上稱爲「第1變 溫抑制過濾器2」），或如圖6所示之第2變溫抑制化學過 濾器1202(以下方便上稱爲「第2變溫抑制過濾器」）。 第1變溫抑制過濾器12(^係如圖5所示，備有過濾媒 體124，及保持該過濾媒體124的保持框122。保持框122 係由垂直於空氣通過方向（圖5中箭頭V所示之方向）之截 面爲矩形的框構件所構成，在空氣通過方向的兩側面（圖5 中紙面左右方向兩端面)形成有開口部。該保持框122係無 間隙地保持著過瀘媒體124的外週部，以使進入保持框 122內部空間的空氣均能通過整個過濾媒體124。 此外，圖5之第1變溫抑制過濾器12(^，係僅由過濾 媒體124構成過濾器部126。又，該變溫抑制過濾器12(^ 上亦可不使用保持框122,而直接設置過濾器部126於既 定之供氣管路等。此時，供氣管路的壁面係實質地兼具保 持框的功能。 前述過濾媒體124，係與構成圖4所示之過濾裝置 130的過濾媒體134相同地，使用由具有蜂巢狀之構造的 碳纖維所構成。 過濾媒體124，具有與前述媒體134相同之面積、相 同之厚度a，但塡充率(對應密度)被設定成爲過濾媒體134 之約一半的d/2。 然而，根據發明者等的見解，除去氣體中的化學物質 ___------ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------·--------1T---------i (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 _____BL__^ 五、發明說明（yf) 的過瀘媒體，一般而言，存在有平衡氣體之濕度的水份® 之特性，且濕度愈高含有的水份愈多。因此，本實施形態 中，即使以加熱器56, 62加熱空氣，而當送至化學過滹器 CFla，CFlb的空氣濕度下降時，構成此化學過濾器CFla’ CFlb的過濾器部126的過濾媒體124，即散發水份補充® 空氣中，自過濾媒體124奪取蒸發潛熱，使過濾媒體124 之溫度下降。其結果，通過過濾媒體124的空氣溫度’在 通過後較進入過濾媒體124之前爲低。 與上述相反的，以冷卻器52冷卻空氣，送至化學過減 器CFla，CFlb之空氣濕度上昇時，構成該等化學過濾器 CFla，CFlb之過濾部126的過濾媒體124，即自空氣中吸 取增加的水份，對過瀘媒體124賦予吸附熱(凝縮熱）’ @ 濾媒體124的溫度即上昇。其結果，通過過濾媒體124 @ 空氣溫度，在通過後較進入過濾媒體124之前爲高。 如前所述，即使以加熱器及冷卻器來調整於既定溫度 的空氣，在使其通過化學過濾器的過濾媒體124後，由於 進入過濾媒體124前之空氣中的溫度變動，使得因上述過 濾媒體124之特性而產生空氣的溫度變動。作爲蒸發潛熱 自過濾器媒體奪取的熱量、或作爲吸附熱而賦予過濾媒體 的熱量，係根據過濾媒體所吸附、或釋放的水份量來決定 〇 此外，氣體的溫度係依據供應或被奪的熱量，及通過 的氣體量而決定。亦即，通過同量的氣體時，過濾媒體所 釋放或吸附的水份量愈多，供應或被奪的熱量亦愈多，而 ______- _27__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 广讀先閲讀背命Μ漆意事頊存瓖寫本頁〕 訂----------------線屬 1233148 A7 __B7______ 五、發明說明fr 氣體的溫度變化亦愈大。因此，爲了抑制溫度變動，可減 少過濾媒體所釋放或吸附的水份量，或加大氣體的通過量 即可。至於加大氣體的通過量，例如使用更大型的送風機 即可。但是，由於單位時間內化學過濾器除去化學污染物 質的量亦增加，故會呈現出化學污染物質之除去率下降的 缺點，因此加大氣體通過量有其限度。 因此，如前所述，構成第1變溫抑制過濾器12(^的過 濾媒體124,其碳纖維的塡充率係設定成具有相同面積、 相同厚度a之前述過濾媒體134的塡充率的大約一半的d/2 。是故，在同一條件下，過濾媒體124與通過的空氣之間 的水份進出的絕對量，約爲過濾媒體134與通過之空氣間 之水份進出絕對量的1/2。如此，藉由第1變溫抑制過濾器 12(^的使用，而能自過濾裝置130減低過瀘媒體124所釋 放或吸附的水份量，據此能抑制通過後的空氣的溫度變動 〇 又，爲降低構成過濾媒體124的碳纖維之塡充率時， 雖亦有降低化學污染物質的吸收能力之疑慮，但因含於氣 體中的化學污染物質，與含有數亦爲數十％的水份相比， 極爲微量，故構成過濾媒體124的碳纖維的塡充率與吸收 過濾媒體124之化學性污染的能力間，其關係並非是直線 性之關係（不成比例）。亦即，如前述地即使減低構成過濾 媒體124的碳纖維的塡充率，亦無化學污染物質之吸收能 力極度下降的情形。是故，根據第1變溫抑制溫過濾器 12(^ ’並無使氣體中的化學污染物質之除去能力太下降的 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） --------訂---------線»· (請先閱讀背面之注意事項再填寫本頁) A7 1233148 _B7 ____ 五、發明說明（7 j) 情形，且能抑制通過的氣體之溫度變動。 (請先閱讀背面之注意事項再填寫本頁) 其次，說明該第1變溫抑制過濾器。(^之具體例，且 同時說明使用該第1變溫抑制過濾器之具體的實驗結果。 又，該實驗如圖5所示，係使用具備用以檢測過濾器通過 前後之空氣溫度的通過前溫度感測器141、及通過後溫度 感測器142爲分別設置於第1變溫抑制過濾器120!之上游 、下游的實驗裝置。又，在該第1變溫抑制過濾器12(^的 上游側，設有控制空氣溫度之未圖示的溫度控制裝置，以 對第1變溫抑制過濾器^(^供應設定於目標溫度的空氣。 又，有關使用該第1變溫抑制過濾器uo!的具體實驗 結束，以和前述過濾裝置130之比較來加以說明。 使用圖5所示之實驗裝置’使用塡充有約〇.〇43g/cm3 密度的蜂巢狀碳纖維之厚度a(=50mm)的過濾媒體124來構 成第1變溫抑制過爐器1201 ’如圖5所不’以速度 V(0.5m/sec)通過空氣。此時，空氣之目標溫度爲23°C。此 外，通過第1變溫抑制過時器^(^前之空氣濕度變動’係 假設通過圖4所示之過濾裝置130後之溫度變動幅度爲23 t：±(h〇3t：之變動幅度。又，該過濾裝置130係以塡充密 度爲0.09 g/cm3之蜂巢狀碳纖維的厚度a(=50mm)的過濾媒 體134所構成。 在此種速度、及濕度變動的條件下，進行第1變溫抑 制過濾器UOi的實驗時，得知通過第1變溫抑制過濾器 120^^ (通過後立即）的空氣溫度(以通過後溫度感測器142 檢測），係爲 23°C±〇.〇15t：。 _ _ 29___ _一— 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 A7 B7 五、發明說明（^ ) 據此而得知，相對於通過過濾媒體124後即刻之目標 溫度的溫度誤差ΔΤ1，與相對通過過濾裝置130之過爐媒 體134後即刻之目標溫度之溫度誤差ΔΤ2之間’具有ΔΤ1 /△Τ2=0.5之關係。 據此，確認了第1變溫抑制過濾器12〇ι ’與過濾裝置 130相較，能抑制通過後之空氣溫度變動於大約一半的程 度。此外，使用第1變溫抑制過濾器1201其通過後的空氣 誤差的增加，在可容許範圍內，且幾乎不對設置於本體室 之曝光室16內曝光裝置本體22的動作’造成不良影響。 又，作爲第1變溫抑制過濾器12〇ι之具體例’雖係以 構成圖4之過濾裝置130的過濾媒體134之1/2來作爲過 濾媒體124之碳纖維之塡充率的情形爲例做了說明’但在 可容許化學物質之除去能力的下降範圍內’亦可降低過濾 媒體124的塡充率。或者，若過瀘媒體124之塡充率與上 述同値的話，藉由減薄其厚度a的措施，亦能與降低塡充 率的情形同樣的抑制通過後空氣的溫度變動。 此外，上述第1變溫抑制過濾器12〇ι，雖係將過濾媒 體124全體的塡充率設定的較低，但並不限於此，亦可將 過濾媒體124之部分的塡充率設定得較其他部分爲低。此 時，在氣體通過方向中將過濾媒體區分爲複數層，並將至 少其中一層的塡充率，設定得較其他部分爲低。但不論是 何情形，過濾媒體134與全部使用相同程度之塡充率的過 濾媒體的過濾裝置相較，能抑制通過氣體中之通過後的溫 度變動。其次，依據圖6說明有關使用圖1之化學過濾器 ___30.__-___ 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂—------—^wi (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 B7 --- - 一 五、發明說明（> ) CFla，CFlb之第2變溫抑制過濾器1202之情形。此處，與 前述第1變溫抑制過濾器12(h相同或同等之構成，係賦予 相同符號，並簡化或省略其說明。 第2變溫抑制過濾器1202，如圖6所示，具備保持框 122,及週圍部分被保持於該保持框122的二個過濾媒體 124A，124B(與前述過濾媒體124相同）。又，與前述第1 變溫過濾器12(^相同的，亦可不使用保持框122，而直接 設置過濾媒體124A，124B於既定之供氣管路中。 過濾媒體124A，124B，係沿箭頭V所示之空氣通過方 向相隔間隔b加以配置，在過瀘媒體124A與過濾媒體 124B之間，形成有中間空間層128。該第2變溫抑制過濾 器1202，係藉由過濾媒體124A，124B及中間空間層128來 構成過濾器部126。過濾媒體124A，124B係與前述相同地 ，由具有蜂巢狀構造之碳纖維形成，氣體通過方向之厚度 爲a/2，係構成圖4所不之過據裝置13 0之過爐媒體13 4的 氣體通過方向之厚度的1/2。此外，各過濾媒體124A， 124B的塡充率係作成和過濾媒體134相同的塡充率。 此處，就該第2變溫抑制過濾器12〇2的作用，與圖4 所示過濾裝置130相較，並根據圖6說明之。 如前所述，構成第2變溫抑制過濾器1202的過爐媒體 124A，具有圖6所示過濾媒體134之約1/2厚度。因此^ 通過構成第2變溫抑制過濾器1202的過濾媒體ι24Α而到 達中間空間層128的空氣，和通過過濾媒體134的空氣^目 較，約爲1/2之水份變化量。如此，藉由過濾裝置13〇而 (請先閱讀背面之注意事項再填寫本頁)-· I ϋ n 1 I mate n 一 -OJ nn ϋ 1_1 II «^ 1 nnnlnn I nn ϋ n Hi ϋ n ϋ nn ϋ ϋ I— I 1233148 A7 B7___-One or five. Illumination optics of invention description (L) The system 28 adjusts the required size and uniform illuminance, and irradiates the reticle R with a predetermined pattern formed thereon. The pattern formed on the reticle R passes through the projection optical system PL, and is reduced and transferred to the wafer stage WST. Each exposure irradiated area on the wafer W held above. In this embodiment, the wafer W is made of, for example, a positive-type chemically-enhanced photoresist coated on the surface as a photosensitizer. A chemical filter CFla as a first filtering device is arranged at one end (the end on the machine room 14 side) of the gas supply line 24 in the main body chamber 12. The configuration of the chemical filter CFla will be described in detail later. At the other end of the gas supply line 24, there are two branches. One branch branch line 24a is connected to the reticle charging chamber 18, and a part of the ejection port on the reticle charging chamber 18 side is provided with A ULPA filter (ultra low penetration air-filter) to remove particles flowing into the air in the reticle charging chamber 18, and a filter box AF1 composed of a filter plate. In addition, on the side opposite to the filter box AF1 of the reticle charging chamber 18, a return section 40 is provided, and one end of the return duct 42 as an exhaust path is connected to the outer part of the return section 40, and The other end of the return duct 42 is connected to a part of the bottom surface of the machine room 14. A branching path 24c is further provided on the branching path 24a, and the branching path 24c is connected to the wafer loading chamber 20, and a discharge port portion on the side of the wafer loading chamber 20 is provided to remove the inflow into the wafer loading. A ULPA filter serving as an air filter for particles in the air in the chamber 20, and a filter box AF2 formed by the filter air chamber. In addition, a return section 44 is provided on the side opposite to the filter box AF2 of the wafer loading chamber 20, and the wafer loading with the return section 44 is __21___ This paper size applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) I ------------- Order -------- II (Please read the notes on the back before filling this page) 1233148 A7 ____ —_ B7___ V. DESCRIPTION OF THE INVENTION (/) An exhaust port communicating with the return duct 42 is provided on the opposite side of the chamber 20. In addition, the aforementioned another branch manifold 24b is connected to ULPA that removes particles in the air flowing into the exposure chamber 16 and a filter box AF3 formed by a filter air chamber, and the exposure chamber 16 is arranged on a reticle. The reticle charge chamber 18 side of the discharge port 90 at the junction of the exposure chamber 16 of the charge chamber 18. The uniform airflow from the ejection port 90 is sent to the upper space of the exposure chamber 16 via a side flow. As shown in FIG. 2 of the cross-sectional view taken along the line AA of FIG. 1 at the boundary portion of the reticle charging chamber 18 and the exposure chamber 16 forming the ejection port 90, a plurality of perimeters are arranged in addition to the reticle transfer area 92. Filter box AF3. Further, as shown in FIG. 1, a return section 46 is provided on the machine chamber 14 side of the bottom of the exposure chamber 16, and a return duct 48 for connecting to the exhaust path is formed on the bottom wall surface of the chamber 12 below the return section 46. The exhaust port on the end side, and the other end side of the return duct 48 is connected to a part of the bottom surface of the machine room 14. On the opposite side of the main body chamber 12 at the bottom of the machine room 14, an OA port 50 serving as an external air extraction port is formed, and a chemical filter CF2b as a second filtering device is provided at the opposite 50A port. In order to maintain cleanliness, the inside of the main body chamber 12, especially the exposure chamber 16, is maintained at a positive pressure relative to the outside. Therefore, air leaks from the front of the main body chamber 12 or the online interface part (not shown) to the outside. Therefore, in order to capture the lost outside air ', the OA port 50 is provided. In addition, in this embodiment, due to consideration of the purpose of corresponding to the so-called T shape of the chemically enhanced photoresistor, the OA port 50 is used to remove the chemical pollutants captured in the air inside the device ( Impurities) and only take clean air into the device, so in the 50A port __22________ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------- order- -------- Line #_ (Please read the precautions on the back before filling this page) 1233148 A7 _-__ 21 --- 5. Description of the invention (yj) Set the chemical filter CF2. The structure and the like of the chemical filter CF2b will be described in detail later. A cooler (dry coil) 52 as a cooling device is provided at a position slightly below the center in the height direction inside the machine room 14. At the outlet of the cooler 52, a first temperature sensor for detecting the surface temperature of the cooler is disposed. The detection system of the first temperature sensor 54 is supplied to the control device 70 (not shown in FIG. 1, refer to FIG. 1). 3). Above the cooler 52 in the air passage in the machine room 14, a first heater 56 as a heating device is arranged at a predetermined interval from the start of the cooler. At the exit of the machine room 上方 above the first heater 56, there is a first blower 58 ° serving as a gas supply fan. In addition, a branch path is provided below the first heater 56 in the air passage in the machine room 14. 60, and the air passing through the cooler 52 from the bottom to about 1/5 of the top flows into the branch path 60. The end portion on the 1/4 side of the machine room of this branch path 60 is constituted by a telescopic bellows-like member 60a. The portion from the serpentine-shaped member 60a of the branch path 60, which is on the opposite side to the machine room I4, is placed in the exposure room 16. A second heater 62 as a heating device and a second ventilation fan 64 as a gas supply fan are arranged in this branch path 60 in this order. On the opposite side of the machine room 14 of the second blower 64, an opposite side is formed. An ejection port for ejecting air near the wafer stage WST. The cooler 52 and the second heater 62 constitute a temperature adjustment device, and the temperature adjustment device, the first blower 58, the second blower 64, and a control system thereof constitute an air conditioner as an environmental control device. . In this example, although the gas passing through the filtering device is set to the relative humidity by the environmental control device —_- _ 9 ^ __ This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) (please Read the notes on the back before filling this page) • -------- Order --------- 1233148 A7 _______B7 —________ V. Description of the invention (> V) is about 50%, temperature It is around 23 ° C, but the gas passing through the filter should be set to a relative humidity of 30 to 70% and a temperature of 20 to 30 ° C. A filter box AF4 composed of a chemical filter CFlb as a first filter device, a ULPA filter, and a filter air chamber is disposed near the wafer stage WST and at the ejection port of the air sent by the second blower. Opposite to the ejection openings provided in the chemical filter CFlb and the filter box AF4, an open end of a return duct 66 as an exhaust path is arranged near the wafer loading chamber 20 in the exposure chamber 16 and the return The other end of the duct 66 is connected to a part of the bottom surface of the machine room 14. The constitution of the chemical filter CFlb will be detailed later. An opening is formed in a part of the bottom surface of the machine room 14 to which the three return ducts 42, 48, 66 are connected, and a chemical filter CF2a is provided as a second filtering device facing the opening. The chemical filter CF2a is easily accessible through an open-close door (not shown) provided in the machine room 14. The configuration of the chemical filter CF2a will be described in detail later. A drain pan 68 is arranged below the cooler 52 in the machine room 14. A second temperature sensor 72 for detecting the temperature of the air inside the air supply line 24 is arranged in the branch portion of the air supply line 24 in the main body room 12 near the machine room 14. The detection temperature of the second temperature sensor 72 is supplied to the control device 70 (not shown in FIG. 1, see FIG. 3). A third temperature sensor 74 is provided on the upstream side of the chemical filter CFlb to detect the temperature of the air sent from the second blower 64. The detection of the third temperature sensor 74 is supplied to the control device 70 (Fig. _24_____ — this paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --------- ----------- Order -------- line (please read the notes on the back before filling this page) 1233148 A7 _______B7___ V. Description of the invention (> ")) 1 in Not shown, see Figure 3). Fig. 3 schematically shows the configuration of a control system related to the temperature control of the air-conditioning apparatus. This control system 'is mainly constituted by a control device constituted by a microcomputer (or workstation). Next, an example of the configuration of the chemical temperature filter CF2a provided opposite to a part of the bottom surface of the machine room 14 and the chemical filter CF2b disposed opposite to the 0A port 50 will be described with reference to FIG. FIG. 4 schematically shows a filtering device 130 using the chemical filters CF2b and CF2b. The filtering device 13 shown in FIG. 4 includes a filtering medium 134 having a property of removing chemical pollutants, and a holding frame 132 for holding the filtering medium 134. The holding frame 132 is a frame-shaped member having a rectangular vertical cross section with respect to the gas passing direction, and openings are formed on both sides of the air passing direction (both end surfaces in the left-right direction of the paper surface in FIG. 4). The filter medium 134 is maintained in a state (airtight state) in which the gas (air) inside the holding frame 132 can pass through. As the blast furnace medium 134 in the filter device 130, a carbon fiber having a honeycomb structure is used here. As shown in FIG. 4, the filter medium 134 represents the width of the air passing direction, and d represents its filling rate, and each of them comprehensively considers the removal capability of the chemical pollutants 过滤 of the filtering device 130. , Size, and setting space. Next, the chemical filter CF1a placed in the furnace 1 of the one end of the gas supply pipe 24 in the main body 12 will be described, and the wafer filter ________ will be installed on this paper. (CNS) A4 specification (210 X 297 mm) -------------------- Order --------- Line 41 ^ (Please read the back first Please fill in this page for the matters needing attention) I 1233148 A7 ____B7 _____ V. Examples of the configuration of the chemical filter CFib near the invention description station WST. As the chemical filters CFla and CFlb, for example, the first temperature-change suppression chemical filter 12 (hereinafter, referred to as "the first temperature-change suppression filter 2") shown in FIG. 5 can be used, or as shown in FIG. 6 The second temperature-change suppression chemical filter 1202 (hereinafter referred to as "second temperature-change suppression filter"). The first temperature-change suppression filter 12 (as shown in Fig. 5 is provided with a filter medium 124, and the filter medium 124 is maintained). The holding frame 122 of the filter medium 124. The holding frame 122 is composed of a rectangular frame member having a rectangular cross section perpendicular to the air passing direction (the direction indicated by arrow V in FIG. 5), and the two sides of the air passing direction (in FIG. 5) Openings are formed on both sides of the paper surface in both left and right directions. The holding frame 122 holds the outer periphery of the passing medium 124 without gaps so that air entering the internal space of the holding frame 122 can pass through the entire filtering medium 124. In addition, The first temperature change suppression filter 12 (^) in FIG. 5 is composed of the filter medium 124 only by the filter medium 124. The temperature change suppression filter 12 (^ may be provided with the filter portion 126 without using the holding frame 122). In the established gas supply pipeline, etc. At this time, The wall surface of the gas pipeline substantially functions as a holding frame. The filter medium 124 is made of carbon fibers having a honeycomb structure in the same manner as the filter medium 134 constituting the filter device 130 shown in FIG. 4. The medium 124 has the same area and the same thickness a as the aforementioned medium 134, but the charge ratio (corresponding density) is set to approximately d / 2 of half of the filter medium 134. However, according to the findings of the inventors, gas Chemical substances in ___------ This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ------------------ --1T --------- i (Please read the precautions on the back before filling out this page) 1233148 A7 _____ BL __ ^ V. Inventive media (yf), in general, there is a balanced gas It has the characteristics of moisture of moisture ®, and the higher the humidity, the more water is contained. Therefore, in this embodiment, even if the air is heated by the heaters 56, 62, the air sent to the chemical filter CFla, CFlb When the humidity decreases, the filter medium 124 constituting the filter portion 126 of the chemical filter CFla 'CFlb, That is, in the air of moisture replenishment®, the latent heat of evaporation is taken from the filter medium 124, which reduces the temperature of the filter medium 124. As a result, the temperature of the air passing through the filter medium 124 is lower than that before entering the filter medium 124. Conversely, when the air is cooled by the cooler 52 and sent to the chemical attenuator CFla, CFlb, when the humidity of the air rises, the filter media 124 constituting the chemical filters CFla, CFlb's filter section 126, that is, the increased air is drawn from the air Moisture imparts heat of adsorption (condensation heat) to the filter medium 124. @The temperature of the filter medium 124 rises. As a result, the temperature of the air passing through the filter medium 124 @ is higher than the temperature before passing through the filter medium 124. As mentioned above, even if the air is adjusted to a predetermined temperature by a heater and a cooler, after passing through the filter medium 124 of the chemical filter, the temperature change in the air before entering the filter medium 124 causes the above-mentioned filtration. Due to the characteristics of the medium 124, the temperature of the air fluctuates. The heat that is taken from the filter medium as the latent heat of evaporation or the heat that is imparted to the filter medium as the heat of adsorption is determined by the amount of water absorbed or released by the filter medium. In addition, the temperature of the gas is based on the heat supplied or taken away. , And the amount of gas passed. That is, when passing the same amount of gas, the more water released or adsorbed by the filter media, the more heat is supplied or taken away, and ______- _27__ This paper size applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) Read it first, read it, and read this book, and write down this page.] Order ---------------- line belongs to 1233148 A7 __B7______ V. Description of the invention fr The greater the temperature change of the gas. Therefore, in order to suppress temperature fluctuations, the amount of water released or adsorbed by the filter medium may be reduced, or the amount of gas passing through may be increased. As for increasing the gas throughput, for example, a larger blower can be used. However, since the amount of chemical pollutants removed by the chemical filter per unit time also increases, there is a disadvantage that the removal rate of the chemical pollutants decreases, so increasing the gas throughput has its limit. Therefore, as described above, the filtration rate of the filter medium 124 constituting the first temperature-change suppression filter 12 (^) is set to approximately half of the filtration rate of the aforementioned filter medium 134 having the same area and the same thickness a. Therefore, under the same conditions, the absolute amount of water in and out of the filter medium 124 and the passing air is about 1/2 of the absolute amount of water in and out of the filter medium 134 and the air passing through. In this way, by using the first temperature-change suppression filter 12 (^), the amount of water released or adsorbed by the filter medium 124 can be reduced from the filtering device 130, and accordingly, the temperature change of the air after passing can be suppressed. In order to reduce the filling rate of the carbon fiber constituting the filter medium 124, although there is also a concern that the absorption capacity of the chemical pollutants is reduced, the chemical pollutants contained in the gas are not compatible with the water content which is also several tens of%. The ratio is extremely small, so the relationship between the charge rate of the carbon fibers constituting the filter medium 124 and the ability to absorb the chemical pollution of the filter medium 124 is not a linear relationship (disproportionate). That is, as described above Reduction of the carbon fiber filling rate of the filter medium 124, and the absorptive capacity of chemical pollutants is extremely reduced. Therefore, according to the first temperature-change suppression temperature filter 12 (^ ' The paper size that is too low for removal is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) -------- Order --------- Line »· (Please read the back first Please note this page before filling in this page) A7 1233148 _B7 ____ V. Description of the invention (7 j), and the temperature fluctuation of the passing gas can be suppressed. (Please read the precautions on the back before filling this page) Next, explain the first 1 Temperature-change suppression filter. (A specific example of ^ and the specific experimental results of using the first temperature-change suppression filter will also be described. In addition, as shown in FIG. 5, this experiment is used to detect before and after the filter passes. The air temperature passing front temperature sensor 141 and the air passing rear temperature sensor 142 are experimental devices provided upstream and downstream of the first temperature change suppression filter 120 !, and the first temperature change suppression filter 12 (^ 'S upstream side, with controls The temperature control device (not shown) of the air temperature supplies air set at the target temperature to the first temperature-change suppression filter ^ (^), and the specific experiment on using the first temperature-change suppression filter uo! Ends, and A comparison will be made with the aforementioned filter device 130. The experimental device shown in FIG. 5 was used to construct a first filter medium 124 having a thickness a (= 50 mm) of honeycomb carbon fibers having a density of about 0.043 g / cm3. The temperature-change suppression furnace 1201 passes air at a speed V (0.5m / sec) as shown in Figure 5. At this time, the target temperature of the air is 23 ° C. In addition, the first temperature-change suppression oven ^ (^ 前The “air humidity fluctuation” is assuming that the temperature fluctuation range after passing through the filter device 130 shown in FIG. 4 is 23 t: ± (h03t: fluctuation range. The filter device 130 is constituted by a filter medium 134 having a thickness of a (= 50 mm) of honeycomb carbon fibers having a radon density of 0.09 g / cm3. Under the conditions of such speed and humidity fluctuations, when the experiment of the first temperature change suppression filter UOi was performed, it was found that the air temperature of the first temperature change suppression filter 120 ^^ (immediately after passing) Detector 142), 23 ° C ± 0.015t :. _ _ 29___ _ 一 — This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 1233148 A7 B7 5. Invention Description (^) According to this, compared with the filter media 124 immediately after passing The relationship between the temperature error ΔT1 of the target temperature and the temperature error ΔT2 of the target temperature immediately after passing through the furnace medium 134 of the filtering device 130 has a relationship of ΔT1 / ΔT2 = 0.5. Based on this, it was confirmed that the first temperature-change suppression filter 120m 'can suppress the air temperature variation after passing through the filter by about half as compared with the filtering device 130. In addition, the increase in air error after passing through the first temperature-change suppression filter 1201 is within a tolerable range, and hardly adversely affects the operation of the exposure apparatus body 22 in the exposure chamber 16 provided in the body chamber. In addition, as a specific example of the first temperature-change suppression filter 12 ′, the case where the half of the filter medium 134 constituting the filter device 130 of FIG. 4 is used as the filling rate of the carbon fiber of the filter medium 124 is taken as an example. It was explained that “but within the range of the reduction of the ability to remove chemical substances”, the charge rate of the filter medium 124 can also be reduced. Alternatively, if the filling rate of the media 124 is the same as that described above, by reducing the thickness a, the temperature variation of the air after passing can be suppressed similarly to the case of reducing the filling rate. In addition, although the first temperature change suppression filter 120m is set to lower the charge rate of the entire filter medium 124, it is not limited to this, and the charge rate of a portion of the filter medium 124 may be set to be relatively high. The other parts are low. At this time, the filter medium is divided into a plurality of layers in the gas passing direction, and the charge rate of at least one layer is set to be lower than that of the other portions. However, in any case, the filter medium 134 can suppress the temperature change after passing through the gas compared with a filter device using all the filter media with the same charge rate. Secondly, the use of the chemical filter of Figure 1 will be explained in accordance with Figure 6. ___ 30 .__-___ The size of wood and paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). -----— ^ wi (Please read the precautions on the back before filling in this page) 1233148 A7 B7 ----15. Description of the invention (>) CFla, CFlb's 2nd variable temperature suppression filter 1202 . Here, the same or equivalent configuration as the first temperature change suppression filter 12 (h) is given the same reference numeral, and the description thereof is simplified or omitted. As shown in FIG. 6, the second temperature change suppression filter 1202 includes a holding frame 122. The two filtering media 124A, 124B (and the same as the aforementioned filtering media 124) are held by the holding frame 122 and the surrounding part. The same as the first temperature-variable filter 12 (^), the holding frame 122 may not be used. The filter media 124A and 124B are directly provided in the predetermined air supply pipeline. The filter media 124A and 124B are arranged at intervals b along the air passing direction shown by the arrow V. Between the filter media 124A and the filter media 124B, An intermediate space layer 128 is formed. The second temperature-change suppression filter 1202 includes filter media 124A and 124B and the intermediate space layer 128 to form a filter unit 126. The filter media 124A and 124B are formed in the same manner as described above and have a honeycomb. The carbon fiber is formed in a structure with a thickness of a / 2 in the gas passing direction, which is 1/2 of the thickness of the gas passing direction constituting the furnace medium 13 4 of the relay device 130 as shown in Fig. 4. In addition, each filter medium The charge rate of the bodies 124A and 124B is the same as the charge rate of the filter medium 134. Here, the function of the second temperature-change suppression filter 1202 is compared with the filter device 130 shown in FIG. This is illustrated in Fig. 6. As described above, the blast furnace medium 124A constituting the second temperature-change suppression filter 1202 has approximately 1/2 the thickness of the filter medium 134 shown in Fig. 6. Therefore, ^ by configuring the second temperature-change suppression filter 1202 The air that reaches the intermediate space layer 128 through the filter media ι24Α is about 1/2 the water change compared to the air passing through the filter media 134. In this way, the filter device 13 is used (please read the back (Please fill in this page again)
· I I I I I I I ^ ·11111111 - I n I 本紙張尺用中國國家標準（CNS)A4~規格（210 X 297公釐） ------ 1233148 A7 _____ B7____ 五、發明說明 減低過濾媒體124A所釋出或吸附的水份量，據此能抑制 過濾媒體124A之通過前後中的空氣之溫度變動。因此’ 通過過濾媒體124A而到達中間空間層128的氣體’其相 對於過濾媒體124A的通過前的濕度變動，通過後的濕度 變動變小。 亦即，過濾媒體124A係達成一種可調整送至下游側 之過濾媒體124B之空氣的濕度變動於較小的功效。 因此，到達中間空間層128的氣體，由於通過了圖4 之過濾媒體124的約1/2厚度所形成的過濾媒體124A ’而 對通過圖4的過濾媒體134之後的氣體的溫度變動，抑制 成約1/2的變動。而且濕度變動亦在其過瀘媒體124A的通 過前後變小。是故，在中間空間層128的氣體通過下游側 的過濾媒體124B時，雖在氣體和過濾媒體124B之間進行 水份的釋出或吸收，但幾乎對通過過濾器體124B之後的 溫變變動不產生影響。 又，第2變溫抑制過濾器1202係分割或過濾媒體 124A與過濾媒體124B，據此而藉由過濾裝置130來抑制 溫度變動，但過濾媒體124A與過濾媒體124B的合計厚度 ’同於構成圖4之過濾裝置130的過濾媒體134的厚度， 故自氣體中除去化學物質的能力與過濾裝置130相同。 其次，說明該第2變溫抑制過濾器1202之具體例，同 時亦說明使用該具體例的實驗結果。又，該實驗中，係使 用與前述第1變溫抑制過濾器12〇2之情形時相同實驗裝置 〇 —______ 32 本紙張尺度適用中國國家標準(CNS)A4規格（210 x 297公爱） ''一— --------—--------訂---------線-^1^· (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 p----BZ_____ 五、發明說明（巧I) 又，關於使用第2變溫抑制過瀘器12〇2之具體的實驗 結果，係與前述第1變溫抑制過濾器120!時同樣地，與圖 4之過濾裝置130相較來加以說明。 透過間隔b(=10mm)的中間間隔層128，來配置氣體通 過方向之厚度爲a/2(=25mm)的過濾媒體124A，124B(密度 各約0.09g/cm3)，使氣體通過方向的過濾器的全寬實値成 爲50mm而構成第2變溫抑制過濾器1202，並如圖6所示 ，以速度V(0.5m/sec)而通過空氣。此時，令空氣的目標溫 度爲23°C。此外，通過第2變溫抑制過濾器1202之前的空 氣濕度變動，係在通過圖4所示之過濾裝置130之後的溫 度變動幅度係設定成具有23°C±0.03°C之變動幅度。 依據此速度、及濕度變動的條件下，當進行第2變溫 抑制過濾器1202的實驗時，得知通過第2變溫抑制過濾器 1202後的空氣溫度(以通過後溫度感測器142來測量），爲 23°C ±0.015°C。 據此而得知，相對於通過過濾器部126即刻後的目標 溫度的溫度誤差ΔΤ1，和相對於通過過濾裝置130即刻後 的目標溫度的溫度誤差ΔΤ2之間，爲具有 之關係。 據此而確認出在使用第2變溫抑制過濾器12〇2時，與 使用圖4之過濾裝置130的情形相較，爲能抑制通過後的 空氣之溫度變動於大約一半的程度。此外，經由第2變溫 抑制過濾器12〇2的使用，其通過後的空氣的溫度誤差的增 加’係於可容許之範圍內，且對配置於本體室12內部的曝 ____33 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) 一一"" --------------------訂---------線 C請先間讀背面之注意事項鼻填寫本頁> 1233148 A7 __B7__ 五、發明說明（ 光室16內的曝光裝置本體22動作’幾乎不會造成任何不 良影響。 达匕時，氣體通過方向之過濾媒體的合計厚度係與圖4 之過濾裝置130相同，且因能使用塡充率亦相同的過濾媒 體，故無降低化學物質之除去能力的情形。 又，上述說明中，構成第2變溫抑制過濾器120的過 濾器部126，雖係作成具有構成圖4之過濾裝置130的過 濾媒體134之1/2厚度的2個過濾媒體124A，124B ’但並 不限於此，只要氣體通過方向的合計厚度爲一定’其構成 過濾器部126的過濾媒體的數目’及各過濾媒體的厚度可 爲任意數。例如，若過濾媒體的數目爲2個’則分別將過 濾媒體的厚度予以作成構成圖4之過瀘裝置130之過濾媒 體的1/3(厚度a/3)、2/3(厚度2a/3)。若過濾媒體的數目爲 3個，則分別將過濾媒體的厚度，作成構成圖4之過濾裝 置130之過濾媒體134的厚度的1/3(厚度a/3)亦可。 此外，各過濾媒體124A, 124B之間的中間空間層128 的寬度b亦可作任意的設定，且可考量過濾器的化學物質 的除去性能，而在設計上將第2變溫抑制過濾器120的氣 體通過方向的全寬作成最佳的寬度(厚度）。 此外，上述第2變溫抑制過濾器1202，可使用具有和 構成過濾裝置130之過濾媒體134同樣塡充率的過濾媒體 124A，124B，但並不限於此，其一方的過濾媒體的塡充率 較他方的塡充率爲低亦可，或一方的過濾媒體的一部分的 塡充率爲低，且兩方的過濾器媒高的一部分的塡充率亦低 _ - __34_______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線"^^. (請先閱讀背面之注意事項再填寫本頁) 1233148 Λ7 _______B7^_ 五、發明說明（乃） 。如此，當過濾媒體的一部分的塡充率爲低時，因更能抑 制過濾媒體之對氣體中的水份吸附、及對氣體中的水份釋 出，故更能縮小相對於過爐器部通過後的目標溫度的溫度 誤差。 其次，有關如上述所構成之曝光裝置中的空調情形， 可適當地參考圖3並根據圖1加以說明。 首先，藉由控制裝置70而使第2送風機58, 64動作 ，據此，分別透過過濾箱AF1，AF2, AF3, AF4將空氣送入 標線片裝料室18、晶圓裝料室20、曝光室16及曝光室16 內的晶圓載台WST附近等的進行前述各部的空調動作。此 時，標線片裝料室18、晶圓裝料室20內，係以下流方式 (down flow)的空調。而曝光室16內則進行前述曝光動作中 的曝光裝置本體22的各部之旁流方式(side flow)的空調。 於是，分別透過回送部40, 44而返回至回送導管42的空 氣、及透過回送部46而返回至回送導管48的空氣、及返 回至回送導管66的空氣，係通過設置於這些回送導管的機 械室14側的出口（本實施形態則爲機械室14的入口 )部分 的化學過濾器CF2a。在通過該化學過瀘器CF2a之際，包 含於48, 46內的空氣中的化學污染物質經由化學過濾器 CF2a而被吸收除去。 接著，通過該化學過濾器CF2a的化學性潔淨空氣， 透過OA 口 50而自曝光裝置外加以擷取，並與通過化學過 濾器CF2b的化學性潔淨空氣混爲一體，而藉由構成空調 裝置的冷卻器52而冷卻至既定溫度。此情形中，本實施形 --------35___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公蓳） --------tr---------線 i^w. (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ___ B7_____ 五、發明說明 態係藉由控制裝置，持續監視第1溫度感測器54的輸出， 且控制冷卻器52的冷卻動作，此時，通過冷卻器的空氣的 濕度、壓力係冷卻至冷卻器表面上產生不結露程度的溫度 ，例如稍高於5°C而至15°C前後。如此，因在冷卻器52表 面上不產生結露，故本實施形態並不設置排流配管系統。 但因第1溫度感測器54的故障，或因發生冷卻器52的不 良意外，而有造成如上述冷卻器52之表面溫度難以控制的 情形之掛慮。故本實施形態考量如此之異常情形而設置了 排流盤68。 繼之，通過冷卻器52而冷卻至既定溫度的空氣，其約 80%被送入第1加熱器56，剩餘的約20%被送入分岐路60 內的第2加熱器56，分別加熱至目標溫度。此時，控制裝 置70依據第2溫度感測器72的檢測値而回授控制第1加 熱器56，且亦依據第3溫度感測器74的檢測値而回授控 制第2加熱器62。此時，透過供氣路徑24而噴出至曝光 室16等內部的空氣之目標溫度(包含溫度控制範圍）、以及 透過分岐路60而噴出至晶圓載台WST附近的空氣之目標 溫度(包含溫度控控範圍），可分別加以設定。 接著，藉由第1加熱器56、62而分別被加熱至目標 溫度之相當於化學性潔淨空氣，藉由第1、第2送風機58, 64分別被送入化學過濾器CFla，CFlb。接著，通過化學過 濾器CFla的空氣，分別透過本體室12內的供氣管路24 及過濾箱AF1, AF2, AF3，分別送入標線片裝料室18、晶 圓裝料室20、曝光室16內。此外，通過化學過濾器CFlb _36__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------變--------tr---------$· (請先閱讀背面之注意事項再填寫本頁) A7 1233148 ____E7___ 五、發明說明 (請先閱讀背面之注意事項再填寫本頁) 的空氣，通過過濾箱AF4而送入晶圓載台WST(及雷射干 渉器IF)的附近。 空氣中的微粒，由於分別通過過濾箱AF1，AF2，AF3, AF4內的ULPA過濾器，而大致確實除去，故對標線片裝 料室18、晶圓裝料室20、曝光室16內及晶圓載台WST的 附近，僅供應不含微粒及化學污染物質等微小粒子之高潔 淨度的空氣，藉由該潔淨空氣而對標線片裝料系統，晶圓 裝料系統，曝光裝置本體22等進行空調。於是，當空調結 束，包含來自曝光裝置本體22等之脫氣所產生之化學污染 物質的化學性污染空氣，即返回至回送導管42, 48, 66內 ，之後，以上述方式重覆進行各部的空調。 此處，說明將變溫抑制過濾器12〇i(或1202)所構成的 化學過濾器CFla，CFlb，以及由過濾裝置130所構成的化 學過濾器CFla，CFlb，分別配置於圖1所示位置的理由。 第1理由，係考量各個過濾裝置的特性。亦即，變溫 抑制過濾器12(h(或1202)和過濾裝置130相比，在其化學 污染物質之除去能力較劣的反面，因具有對通過氣體之溫 度變動較高的抑制能力，當配置於嚴格要求溫調整的處理 ，則能更具使用功效。故本實施形態中，係在對曝光室16 內等的供氣路徑中，分別配置化學過濾器CFla，CFlb，而 全力抑制因空氣之溫度變動的增加所導致曝光精度的下降 等。另一方面，過濾裝置130係化學污染物質的除去能力 爲佳，但通過的氣體之溫度變動的抑制能力較劣，故配置 於溫度變動是大致不成問題之被要求化學污染物質之除去 _37____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 A7 B7 五 、發明說明（；^/ 能力的處所，據此而更具使用功效。是故，在自外部取入 空氣的部分或自回送導管空氣所返回的部分中，配置化學 過濾器CF2a，CF2b(過濾裝置130)。 第2理由，係考量2種類的過濾器，亦即變溫抑制過 濾器12(^(或1202)、以及與過濾器130相組合的優點。亦 即，藉由過濾裝置130而有效地除去化學污染物質的空氣 ’爲被送入至變溫抑制過濾器120!(或1202)，而依據如此 之構成，即使採用碳纖維的塡充率爲低、且溫度變動抑制 功效爲大的過濾媒體，來作爲構成變溫抑制過濾器12(h(或 1202)的過濾器部的過濾媒體，亦能充分高度地維持曝光室 16等的內部的化學潔淨度。此外，此情形時，因能抑制變 溫抑制過濾器12(h(或1202)的污染，故具有長時間使用而 無須替換此變溫抑制過濾器的12(h(或1202)的優點。 如上述之詳細說明，根據本實施形態，在自氣體中除 去化學污染物質的同時，其抑制通過後氣體的溫度變動於 既定範圍內的變溫抑制過濾器120:(或1202)所構成的化學 過濾器CFla，CF2b，係能分別設置於自機械室14至本體 室12之作爲通氣路徑的供氣管路24、分岐路60的一部分 。因此，包含有化學過濾器CFla，CF2b的下游側的通氣路 徑的空間（具體而言，在上述實施形態中係曝光室16、標 線片裝料室18 ’晶圓裝料室20的內部空間、晶圓載台 WST附近的空間），係形成化學污染物質之除去的化學潔 淨之環境氣氛。此外，藉由大部分收容於機械室14內的空 調裝置而設定於目標溫度的空氣，爲藉由通過化學過濾器 38 ------------41^--------^---------^ i^wi (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 A7 ____B7____ 五、發明說明 CFla，CF2b的措施，而能抑制其通過後的溫度變動。 此情形，因在本體室12內，設有收容曝光裝置本體 22的曝光室16，且在對該曝光室16供應空氣的空氣供應 路徑的供氣管路24上，設有化學過濾CFla，故被充分除 去化學污染物質的化學潔淨度高的（化學性潔淨)空氣，係 在可抑制溫度變動的狀態下供應至曝光室16。據此，即能 令曝光裝置本體22的週邊環境氣氛成爲化學潔淨之狀態。 因此能長期而有效地抑制因照明光學系統內等的光學構件 的結露而產生的照度下降之弊端。 此外，曝光裝置本體22係具有保持晶圓W的晶圓載 台WST，及測量該晶圓載台WST之位置的干涉器IF，在 對配置有晶圓載台WST與干涉器IF之曝光室內的一部分 空間供應空氣的供應路徑上，配置有化學過濾器CFlb。因 此，可全力地抑制因空氣搖晃（溫度游動）而導致的干涉器 IF的測量誤差，而能要精度地實現具有精度要求的晶圓載 台WST的位置控制。 此外’在本體室12內，設有用以收容對曝光裝置本體 22的晶圓載台WST搬入晶圓w，並自晶圓載台WST搬出 晶圓W的晶圓裝料系統(84, 86, 88)的晶圓裝料室20，且對 晶圓裝料室20亦可供應通過化學過濾器CFla的空氣。因 此，能使晶圓裝料室20內成爲化學潔淨且溫度安定之狀態 〇· IIIIIII ^ · 11111111-I n I This paper ruler uses China National Standard (CNS) A4 ~ Specification (210 X 297 mm) ------ 1233148 A7 _____ B7____ V. Description of the invention The filter media released by 124A Or the amount of water absorbed can suppress the temperature change of the air before and after the passage of the filter medium 124A. Therefore, "the gas reaching the intermediate space layer 128 through the filter medium 124A" has a smaller humidity change after passing than the filter medium 124A before passing. That is, the filtering medium 124A achieves an effect that the humidity variation of the air sent to the filtering medium 124B to the downstream side can be adjusted to be small. Therefore, the gas reaching the intermediate space layer 128 is suppressed to approximately the temperature fluctuation of the gas after passing through the filter medium 134 of FIG. 1/2 change. In addition, the humidity fluctuation becomes smaller before and after the passage of the medium 124A. Therefore, when the gas in the intermediate space layer 128 passes through the downstream filter medium 124B, although the moisture is released or absorbed between the gas and the filter medium 124B, it almost changes the temperature change after passing through the filter body 124B. No effect. The second temperature change suppression filter 1202 divides or filters the media 124A and 124B, and suppresses temperature fluctuations by the filter device 130. However, the total thickness of the filter media 124A and the filter media 124B is the same as that shown in FIG. 4 The thickness of the filter medium 134 of the filter device 130 is the same as that of the filter device 130 because of its ability to remove chemicals from the gas. Next, a specific example of the second temperature-change suppression filter 1202 will be described, and an experimental result using this specific example will also be described. In this experiment, the same experimental setup as in the case of the aforementioned first temperature-change suppression filter 1202 was used. _________ 32 This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 public love) '' I — --------—-------- Order --------- line- ^ 1 ^ · (Please read the precautions on the back before filling this page) 1233148 A7 p ---- BZ_____ V. Description of the Invention (Special I) In addition, the specific experimental results of using the second temperature-change suppression filter 1202 are the same as those of the first temperature-change suppression filter 120 !, and The filtering device 130 of FIG. 4 will be described in comparison. Filter media 124A, 124B (density of about 0.09g / cm3 each) with a thickness of a / 2 (= 25mm) in the gas passing direction are arranged through the intermediate spacer layer 128 at the interval b (= 10mm), so as to filter the gas in the passing direction The full width of the device becomes 50 mm to form a second temperature-change suppression filter 1202, and passes air at a speed V (0.5 m / sec) as shown in FIG. 6. At this time, let the target temperature of the air be 23 ° C. In addition, the air humidity fluctuation before the filter 1202 is suppressed by the second temperature change, and the temperature fluctuation range after passing through the filter device 130 shown in FIG. 4 is set to have a fluctuation range of 23 ° C ± 0.03 ° C. Based on this speed and humidity fluctuations, when the experiment with the second temperature-change suppression filter 1202 was performed, it was found that the air temperature passed through the second temperature-change suppression filter 1202 (measured by the post-temperature sensor 142) , 23 ° C ± 0.015 ° C. From this, it is understood that there is a relationship between the temperature error ΔT1 with respect to the target temperature immediately after passing through the filter unit 126 and the temperature error ΔT2 with respect to the target temperature immediately after passing through the filter 130. Based on this, it was confirmed that when the second temperature-change suppression filter 1202 was used, compared with the case where the filter device 130 of Fig. 4 was used, it was possible to suppress the temperature variation of the air after passing through about half. In addition, through the use of the second temperature-change suppression filter 1202, the increase in the temperature error of the air after passing through it is within a permissible range, and it is suitable for the exposure placed inside the main body 12 ____33 This paper standard is applicable China National Standard (CNS) A4 Specification (210 X 297 Public Love) One by one " " -------------------- Order -------- -Line C, please read the notes on the back first and fill in this page> 1233148 A7 __B7__ V. Description of the Invention (The exposure device body 22 in the light chamber 16 operates' will hardly cause any adverse effects. When the dagger is reached, the gas passes The total thickness of the filter media in the same direction is the same as that of the filter device 130 in FIG. The filter section 126 of the temperature change suppression filter 120 is made of two filter media 124A and 124B having 1/2 thickness of the filter media 134 constituting the filter device 130 of FIG. 4, but it is not limited to this, as long as the gas passes through the direction The total thickness of the filter medium is constant. The number 'and the thickness of each filter medium can be any number. For example, if the number of filter media is two', the thickness of the filter medium is made 1/3 (thickness of the filter medium constituting the filter device 130 in FIG. 4). a / 3), 2/3 (thickness 2a / 3). If the number of filter media is three, the thickness of the filter media is made 1/3 of the thickness of the filter media 134 constituting the filter device 130 of FIG. 4 (Thickness a / 3). In addition, the width b of the intermediate space layer 128 between the filter media 124A and 124B can also be set arbitrarily, and the removal performance of the chemical substance of the filter can be considered, and the design The full width of the gas passing direction of the second temperature-change suppression filter 120 is made into the optimal width (thickness). In addition, the second temperature-change suppression filter 1202 can be filled with the same filter medium 134 as the filter device 130. Rate of filter media 124A, 124B, but is not limited to this. The charge rate of one of the filter media may be lower than the charge rate of the other, or the charge rate of a part of one filter media is low, and Partial filter medium high part 塡The rate is also low _-__34_______ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------------- Order ---- ----- line " ^^. (Please read the precautions on the back before filling in this page) 1233148 Λ7 _______ B7 ^ _ 5. Description of the invention (yet). In this way, when a part of the filter media has a low charge rate At this time, the filter medium can more effectively suppress the adsorption of moisture in the gas and the release of moisture in the gas, so the temperature error with respect to the target temperature after passing through the furnace unit can be further reduced. Next, the condition of the air conditioner in the exposure apparatus configured as described above can be explained with reference to FIG. 3 and FIG. 1 as appropriate. First, the second blower 58 and 64 are operated by the control device 70, and accordingly, air is sent to the reticle loading chamber 18, the wafer loading chamber 20, and the filter boxes AF1, AF2, AF3, and AF4, respectively. The exposure chamber 16 and the vicinity of the wafer stage WST in the exposure chamber 16 perform the air-conditioning operations of the aforementioned units. At this time, the inside of the reticle loading chamber 18 and the wafer loading chamber 20 is a down-flow air conditioner. In the exposure chamber 16, a side-flow air conditioner of each part of the exposure apparatus body 22 in the aforementioned exposure operation is performed. Then, the air returned to the return duct 42 through the return sections 40 and 44, the air returned to the return duct 48 through the return section 46, and the air returned to the return duct 66 are passed through the machinery provided in these return ducts. The chemical filter CF2a is part of the outlet on the side of the chamber 14 (the inlet of the machine chamber 14 in the present embodiment). When passing through the chemical filter CF2a, chemical pollutants in the air contained in 48, 46 are absorbed and removed through the chemical filter CF2a. Next, the chemically clean air passing through the chemical filter CF2a is captured from outside the exposure device through the OA port 50, and is integrated with the chemically clean air passing through the chemical filter CF2b. The cooler 52 cools to a predetermined temperature. In this case, this embodiment -------- 35___ This paper size applies to China National Standard (CNS) A4 (210 X 297 cm) -------- tr ------ --- line i ^ w. (Please read the precautions on the back before filling in this page) 1233148 A7 ___ B7_____ 5. The description of the invention is that the output of the first temperature sensor 54 is continuously monitored by the control device, and the control In the cooling operation of the cooler 52, at this time, the humidity and pressure of the air passing through the cooler are cooled to a temperature at which a non-condensing degree occurs on the surface of the cooler, for example, slightly higher than 5 ° C and around 15 ° C. As described above, since no condensation occurs on the surface of the cooler 52, the drainage piping system is not provided in this embodiment. However, there is a concern that the surface temperature of the cooler 52 may be difficult to control due to a failure of the first temperature sensor 54 or a defective accident of the cooler 52. Therefore, in the present embodiment, a drainage plate 68 is provided in consideration of such an abnormal situation. Next, about 80% of the air cooled to a predetermined temperature by the cooler 52 is sent to the first heater 56 and the remaining about 20% is sent to the second heater 56 in the branch manifold 60, and is heated to Target temperature. At this time, the control device 70 feedback-controls the first heater 56 based on the detection of the second temperature sensor 72, and also feedback-controls the second heater 62 based on the detection of the third temperature sensor 74. At this time, the target temperature (including the temperature control range) of the air ejected into the exposure chamber 16 and the like through the air supply path 24 and the target temperature (including the temperature control) ejected into the vicinity of the wafer stage WST through the manifold 60 Control range) can be set separately. Next, the first heaters 56 and 62 are respectively heated to the chemically clean air corresponding to the target temperature, and the first and second blowers 58, 64 are sent to the chemical filters CFla and CFlb, respectively. Next, the air passing through the chemical filter CFla passes through the air supply line 24 and the filter boxes AF1, AF2, and AF3 in the body chamber 12, and is sent to the reticle loading chamber 18, the wafer loading chamber 20, and the exposure chamber, respectively. Within 16. In addition, through the chemical filter CFlb _36__ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ change -------- tr- -------- $ · (Please read the precautions on the back before filling this page) A7 1233148 ____E7___ V. The air of the invention (please read the precautions on the back before filling this page), pass through the filter box AF4 And it is brought into the vicinity of the wafer stage WST (and the laser dryer IF). The particles in the air are substantially removed because they pass through the ULPA filters in the filter boxes AF1, AF2, AF3, and AF4. Therefore, the reticle loading chamber 18, wafer loading chamber 20, exposure chamber 16 and Near the wafer stage WST, only clean air is supplied that does not contain fine particles such as particulates and chemical pollutants. The clean air is used to load the reticle loading system, wafer loading system, and exposure device body 22 Wait for air conditioning. Then, when the air-conditioning is completed, the chemically polluted air containing the chemically polluted substances generated by the degassing of the exposure device body 22, etc., is returned to the return ducts 42, 48, 66, and then the processes of the various sections are repeated as described above. air conditioning. Here, it will be described that the chemical filters CFla and CFlb constituted by the temperature change suppression filter 120i (or 1202) and the chemical filters CFla and CFlb constituted by the filtering device 130 are respectively disposed at positions shown in FIG. 1. reason. The first reason is to consider the characteristics of each filtering device. That is, compared with the filtering device 130, the temperature-change suppression filter 12 (h (or 1202)) has a lower ability to remove chemical pollutants because it has a higher ability to suppress the temperature fluctuation of the passing gas. In the process that strictly requires temperature adjustment, it can be more effective. Therefore, in this embodiment, the chemical filters CFla and CFlb are respectively arranged in the air supply path such as the exposure chamber 16 to fully suppress The increase in temperature fluctuations leads to a decrease in exposure accuracy, etc. On the other hand, the filter device 130 has a better ability to remove chemical pollutants, but the ability to suppress the temperature fluctuations of the passing gas is poor, so it is almost impossible to arrange for temperature fluctuations. Removal of chemical contaminated substances in question is required_37____ This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 1233148 A7 B7 V. Description of invention (; ^ / capacity premises, and more accordingly Use effect. Therefore, chemical filters CF2a, CF2b (filter device 130) are arranged in the part that takes in air from the outside or the part that returns from the return duct air. The second reason is to consider the two types of filters, that is, the temperature-suppression filter 12 (^ (or 1202)) and the advantages of combining with the filter 130. That is, the filter device 130 is used to effectively remove chemical pollution. The material air is sent to the temperature-change suppression filter 120! (Or 1202). According to this structure, even if a filter medium using carbon fiber has a low charge rate and a large temperature fluctuation suppression effect, it is used as a structure. The temperature control filter 12 (h (or 1202)) of the filter medium can sufficiently maintain the chemical cleanliness of the interior of the exposure chamber 16 and the like. In this case, the temperature control filter 12 can be suppressed. (h (or 1202) pollution, so it has the advantage of 12 (h (or 1202)) without the need to replace the temperature-change suppression filter for a long time. As described in detail above, according to this embodiment, the chemical is removed from the gas At the same time as the pollutants, the temperature-change suppression filters 120: (or 1202) composed of chemical filters CF1a and CF2b which can suppress the temperature change of the gas after passing can be installed in the machinery room 14 to the Part of the air supply line 24 and the branching path 60 of the chamber 12 as the ventilation path. Therefore, the space containing the ventilation path on the downstream side of the chemical filters CF1a and CF2b (specifically, the exposure chamber 16 in the above embodiment) The reticle loading chamber 18 (the internal space of the wafer loading chamber 20, the space near the wafer stage WST), forms a chemically clean ambient atmosphere for the removal of chemical pollutants. In addition, most of them are contained in The air set at the target temperature by the air-conditioning unit in the machine room 14 passes through the chemical filter 38 ------------ 41 ^ -------- ^ ---- ----- ^ i ^ wi (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 1233148 A7 ____B7____ 5. Description of the invention CFla, CF2b measures can suppress the temperature change after passing. In this case, since the exposure chamber 16 that houses the exposure device body 22 is provided in the body chamber 12, and the air supply line 24 that supplies air to the exposure chamber 16 is provided with a chemical filter CFla, it is Highly chemically clean (chemically clean) air that sufficiently removes chemical pollutants is supplied to the exposure chamber 16 in a state where temperature fluctuations can be suppressed. As a result, the surrounding environment atmosphere of the exposure apparatus body 22 can be chemically cleaned. Therefore, it is possible to effectively and effectively suppress the disadvantage of the decrease in the illuminance caused by the dew condensation of the optical member in the illumination optical system and the like for a long period of time. In addition, the exposure apparatus body 22 includes a wafer stage WST holding the wafer W and an interferometer IF that measures the position of the wafer stage WST, and a part of the space in the exposure chamber where the wafer stage WST and the interferometer IF are arranged. A chemical filter CFlb is provided on the supply air supply path. Therefore, it is possible to fully suppress the measurement error of the interferometer IF due to air shaking (temperature walk), and it is necessary to accurately realize the position control of the wafer stage WST with the required accuracy. In addition, a wafer loading system (84, 86, 88) is provided in the main body chamber 12 for accommodating the wafer stage WST into the exposure apparatus body 22 and loading the wafer w from the wafer stage WST. The wafer loading chamber 20 can also supply air to the wafer loading chamber 20 through the chemical filter CF1a. Therefore, the inside of the wafer loading chamber 20 can be chemically cleaned and the temperature stabilized.
此外’在本體室12內，設有用以收容對曝光裝本體 22的標線片載台RST搬入標線片R，並自標線片載台RST 私-、張尺度適用中國國家標準（CNS)A4規格（咖X撕公爱） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7 1233148 ______B7__ 五、發明說明 搬出標線片R的標線片裝料系統(80，82)的標線片裝料室 18，且對標線片裝料室18亦可供應通過化學過濾器CFla 的空氣。故能使標線片裝料室18內成爲化學潔淨且溫度安 定之狀態。 此外，本實施狀態的曝光裝置10，係構成一種自機械 室14透過本體室12而返回機械室14的空氣循環路徑，並 在自本體室12返回機械室14的排氣路徑(42, 48, 66)、與 自設置於機械室14的OA 口 50擷取外氣的通路上，分別 配置有相較於第1過濾裝置其化學污染物質的除去率較高 的化學過濾器CF2a，CF2b。是故，藉由配置於自本體室12 返回至機械室14的排氣路徑的化學過濾器CF2a，而能有 效率地除去因曝光裝置本體22所產生的脫氣而來的空氣中 的化學污染物質。另，藉由配置於自機械室14內的OA 口 50擷取外氣的通路上的化學過濾器CF2b，而能擷取經除 去化學污染物質的化學潔淨的外氣於裝置內。於是’這些 空氣再次藉由空調裝置而分別透過化學過濾器CFla，CFlb 供應至本體室12內。因此，能維持本體室12內的曝光裝 置本體22週邊的環境氣氛於化學性之潔淨度爲高的狀態（ 化學潔淨狀態），據此而能更長期有效地抑制因光學構件的 結露而產生照度下降等的弊端。再者，經由這些化學過爐、 器CF2a，CF2b所除去的化學污染物質的化學潔淨空氣’係 被送入化學過濾器CFla，CFlb。此外，由於自本體室返回 至機械室的排氣路徑或機械室內的外氣的通路’均係無須 考慮溫度變動的良好處所，因此即使通過後氣體的溫度變 ___40 ______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂---------^ i^w— (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 -----------B7_____ 五、發明說明q，） 動較大’亦不致有任何影響，故能使用化學污染物質去除 能力的過濾裝置。因此，化學過濾器CFla，CFlb的壽命變 長’即使經過長時間使用亦無須替換。 此外，較化學過濾器CFla下游之供氣管路24的至少 其中的內壁部分，係以SUS或鐵氟龍(登錄商標)等的脫氣 少的材質形成，因此較化學過濾器CFla爲下游的供氣管 路部分上幾乎不產生脫氣，故能對收容有曝光裝置本體22 的曝光室16，標線片裝料室18，晶圓裝料室20，確實地 送入化學潔淨空氣。又，上述實施形態中，雖然溫度調整 裝置係具備冷卻器52及加熱器56, 62的一種構成，但本 發明之溫度調整裝置並不限於此。例如，在曝光之際，曝 光裝置本體22的週邊環境氣氛係較曝光用光的能量爲高溫 ，且具備自曝光室16排出的空氣爲透過回送部而再次返回 至溫度調整裝置的循環系統之如此的上述實施形態，其返 回至溫度調整裝置的空氣的溫度，因必定較設定溫度（目標 溫度)爲高，故只備有冷卻器之構成即可。在如此之情形下 ，將被加熱至目標溫度以上的氣體’經由冷卻器的冷卻措 施，即能將化學過濾器CFla，^^^通過前的氣體溫度調整 於既定範圍內。 此外，在由外部供應被冷卻至目標溫度以下的氣體的 情形時，係經由加熱器而加熱該氣體的措施’而能對目標 溫度調整過濾裝置通過1前的氣1體溫度於既定圍內’故只 設置加熱器即可。 此外，上述實施形態中，雖係說明有關對本體室內循 _______41______ ^纸張尺度適用中國國(CNS)A4規格（210 X 297公爱 --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) I233148 A7 ____— _ 五、發明說明 環供應空調用的氣體之情形，但並不限於此’在本體室12 內自部經過機械室14，而通過化學過濾器CFla，CFlb後 ，對本體室12內供應空氣，且自本體室12能排出至外部 的一種構成亦可使用。此情形時，在設置於機械室14等的 外氣取入口，最好是能配置化學污染物質的除去率高的過 瀘裝置。此時，亦可獲得與上述實施形態相同的功效。 又，上述實施形態所說明之變溫抑制過濾器12(^、 U02及過濾裝置130等所例舉的數値，例如構成過濾媒體 的碳纖維的密度及氣體通過方向的總厚度等的具體性的數 値，僅爲一例，本發明並不限於該等數値。 此外，上述實施形態中’雖係說明使用具有蜂巢狀構 造之碳纖維來作爲構成過濾裝置130及變溫抑制過濾器 12〇ι，1202之過濾部126之過濾媒體的情形，但並不限於此 ’作爲此等過濾媒體，例如亦可使用具有可除去酸性物質 、鹼性物質、有機物中至少一種性質的材料，具體而言， 例如在活性碳或陶瓷等的多孔質構件中添加有正離子成份 及陰離子成份之一方的添加型、或由具有離子交換基的纖 維 '樹脂薄膜等構成的離子交換型、及由粒狀活性碳、粉 末狀活性碳、陶瓷等的多孔質構件所構成的物質吸附型者 〇 作爲過濾媒體，即使在使用由碳纖維以外之前述各種 材料所構成的過濾媒體時，爲了抑制過濾裝置的水份吸收 及釋放’亦可藉由採用降低過爐媒體的填充率、或在複數 個過濾媒體之間設置空間等的槪念，來獲得與上述相同之 L-— __42 本國家標準（CNS)A4規格（21Q χ 297公楚） --------------------訂---------線 ^w. (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 __ ___B7 ____ 五、發明說明（少（} 功效。 此外，特別是在前述第2變溫抑制過濾器1202中’作 爲構成過濾器部的複數過濾媒體，並不須要是各由相同材 料所形成的過濾媒體，亦可是用以除去鹼性物質的過濾媒 體、用以除去酸性物質的過瀘媒體，用以除去有機物質的 過濾媒體等的組合。 又，上述實施形態中所舉之第1變溫抑制過濾器、第 2變溫抑制過濾器的實驗例，係一種使用碳纖維作爲過濾 媒體的實驗結果，而在使用由上述其他材料形成的過濾媒 體時，因過濾媒體的單位重量對水份的吸附量相異，實驗 結果當然不同，且設計過濾器時的最佳値(過濾媒體之塡充 率、或氣體通過方向的寬度)亦相異。 此外’上述實施形態中，亦可使用活性碳過濾器或沸 石過瀘器等，以作爲化學過濾器CFla，CFlb，CF2a，CF2b ’此時’ 一般亦能完全除去潔淨室內及曝光裝置內所生的 化學性雜質。亦即’作爲存在於室內、或投影光學系統及 照明光學系統中之光學元件間之空間內的雜質，矽氧烷 (Si-o鏈爲軸之物質)或矽氨烷⑺丨以鏈爲軸之物質)等的矽系 有機物將會成爲問題。詳言之，矽氧烷，係Si_〇鏈成爲環 狀之所謂「環狀砂氧院」，包含於投影曝光裝置所使用的 接著劑、密封劑、塗料等之中，經長時間的變化後，產生 脫氣。環狀砂氧院’如眾所週知地能良好地附著於矽晶圓 等半導體基板表面或透鏡的電介質體表面上，當照射紫外 光(UV光)時’即會氧化，而造成光學元件表面之素氧矽化 幸、紙張尺度適用中國國家標準（CNS)A4x 297^2^ ) ----~- --------1---------^ (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ___ B7_________ 五、發明說明（ip» 物系結霧的原因。 (請先閱讀背面之注意事項再填寫本頁) 此外，矽氨烷中，作爲多數使用者在光阻塗覆之製程 中使用之前述處理劑，有Si數爲2個之HMDS(六甲基二 矽氨烷）。HMDS，僅與水反應，即會變化爲極易附著於半 導體基板表面或電介質體表面的物質（加水分解）-矽醇， 當再照射紫外光時，即會與矽氧烷一樣氧化，而造成光學 元件表面中的矽氧化物系結霧的原因。又，矽氨烷在上述 加水分解的情形下會產生氨，而該氨和矽氧烷共存時則更 易造成光學元件表面的結霧。活性碳過濾器或沸石過濾器 能除去此矽氧烷或矽氨烷等矽系的有機物。 此外，使用KrF準分子雷射光或ArF雷射光或較此更 短波長的光作爲曝光用之照明光的投影曝光裝置中，一般 係依據光潔淨之方式進行光學元件表面的潔淨處理，但藉 由該光潔淨方式而淸除附著於光學元件表面的有機物(碳氫 化合物等)時，即會浮遊於空氣中，而該有機物亦能藉由活 性碳過瀘器或沸石過濾器來加以除去。 此外，目前，除矽系雜質外，室內的配線或塑膠等的 脫氣、可塑劑(苯二甲酸酯等）、耐燃劑(磷酸、氯系物質.)等 之雜質問題亦持續形成，但此可塑劑或耐燃劑等亦可藉由 活性碳過濾器或沸石過濾器來加以除去。 又，上述實施形態中，具備用以改變第1送風機58、 第2送風機64、標線片的照明條件，用以驅動光學元件之 驅動構件等（例如變焦透鏡、視野光圏等）。此送風機及驅 動構件，具有馬達、與承受該馬達軸之軸承來作爲滑動部 ---- 44___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1233148 A7 ___B7_____ 五、發明說明（fy ，爲了圓滑地維持軸承的轉動而使用潤滑劑。作爲該潤滑 劑的潤滑油，係使用可抑制溢氣產生的材質，例如氟系潤 滑油。該潤滑油在氮氣環境氣氛中，以60°C經10分鐘加 熱約10mg潤滑油時所產生的溢氣量(有機物質），是爲甲苯 換算値的150μΕ/ιη3以下。特別是上述加熱條件下所產生的 溢氣量(有機物質），爲在甲苯換算値的lOOpg/m3以下爲佳 。此外，理想上係在40pg/m3以下爲佳。此種40pg/m3的 潤滑油，例如有大金公司製造之德母納(產品名稱）。 如前所述，可在配置於室內的送風機或驅動構件的滑 動部中使用上述之潤滑油，而能抑制室內的污染，而且能 延長配置於室內之化學過濾器的壽命。 此外，上述實施形態，雖係說明在本體室之機械室附 近、與晶圓載台附近，設置化學過濾器的情形，但並不限 於此，亦可設置於供應至標線片裝料室或晶圓裝料室的空 氣供應口處。據此，由於能更進一步的能對標線片裝料室 、晶圓裝料室的內部進行化學潔淨，故在進行標線片替換 、晶圓替換之際，即使各裝料室與曝光室是相通，亦無污 染曝光室內之環境氣氛的情形，且能高精度地維持曝光精 度。 此外，上述實施形態所說明之化學過濾器CFla, CFlb 等的配置、圖1所示之空調裝置或通氣路徑等的構成，可 任意作成。 此外，上述實施形態中，雖係說明在本體室內設置標 線片裝料室、晶圓裝料室、曝光室之情形，但並不限於此 ___ 45___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 ________ B7 ______ 五、發明說明（4) ’在本體室內僅設置曝光室，或在其他之環境控制室內， 一起或分別單獨設置標線片裝料室，晶圓裝料室亦可。 此外，上述實施形態中，雖係說明不同於本體室而另 外設置機械室之情形，但並不限於此，以間隔壁劃分1個 室來形成收容曝光裝置本體的本體室與機械室亦可。 又，圖1中係鄰接本體室配置機械室之構成，但在潔 淨室的機台下（公共空間）等配置機械室亦可。此時，光源 亦可配置於該機台下。此外，空調裝置雖是使其控制空氣 之溫度，但亦可附加以作成壓力控制。 此外，使用ArF準分子雷射光(波長193nm)作爲曝光 用照明光時，與照明光學系統28同應的，亦對投影光學系 統PL的鏡筒內，或收容投影光學系統PL的框體內，供應 非活性氣體(氮等）。而且，在使用F2雷射光(波長157nm) 作爲曝光用照明光時，係在各個小室內配置標線片載台及 晶圓載台，且除了對照明光學系統28及投影光學系統PL 之外，亦對照明光學系統28與投影光學系統PL之間，以 及投影光學系統PL與晶圓W之間，分別供應非活性氣體( 氦等）。因此，包含光源內部而密封自該光源至晶圓W的 照明光程的至少一部分，並對其內部供應非活性氣體的曝 光裝置中，例如在供應至照明光學系統的非活性氣體所通 過的排氣路徑的途中、或在出口，亦設置化學物質除去過 濾器（化學過濾器）爲佳。當然，在非活性氣體的流入路徑 的途中或入口亦設置化學過濾亦可，此情形特別是在將回 收之非活性氣體，加以潔淨再使用時具有功效。此外，如 _^--- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —I----訂---------線 (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 _B7________ 五、發明說明 上述，例如使用屬於波長120nm〜200nm程度的真空紫外 域的光線作爲曝光用照明光等時，可使用上述非活性氣體( 氮氣、氦氣等）來作爲空調用空氣。因此，本發明之環境控 制裝置，包含有進行非活性氣體等的供應且溫度調整的氣 體調節裝置之構成。 又，上述實施形態中，雖係說明使用KrF準分子雷射 、ArF準分子雷射等來作爲光源之情形，但並不限於此， 亦可用F2雷射、Ar2雷射來作爲光源，或使用金屬蒸氣雷 射或YAG雷射，以該等之高次諧波來作爲曝光用照明光。 或是，將DFB半導體雷射或光纖雷射振盪的紅外線域或可 視域的單一波長雷射光，以例如摻雜有餌(Er)或餌與釔(Yb) 兩者的光纖放大器加以放大，使用非線形光學結晶波長變 換爲紫外光的高次諧波，作爲曝光用照明亦可。 此外，本發明並非僅適用於步進重覆方式、步進掃描 方式、或步進接合方式(step and stitch)之曝光裝置，例如 亦可適用於反射鏡投影•對準、近接方式之曝光裝置、及’ 光重覆器(photo repeater)等。亦即，無論曝光裝置本體之 構成爲何，只要是具有環境控制裝置（空調裝置等）的曝光 裝置，即能採用本發明。 [元件製造方法] 其次，說明有關微影製中使用上述曝光裝置之元件製 造方法之實施形態。 圖7爲藏币兀件(1C或LFI)%的半導體晶片、液晶面 — ___£7____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------^---------$ (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 _B7___ 五、發明說明（ft) 板、LCD、薄膜磁頭、微機械等）之製造例的流程圖。如圖 7所示，首先，在步驟201中(設計步驟），進行元件之機能 ，性能設計(例如半導體元件的電路設計等），並進行用以 實現該機能的圖案設計。繼之，在步驟202(光罩製作步驟) ，製作光罩，並將已設計的電路圖案形成於光罩。另一方 面，在步驟203(晶圓製造步驟），使用矽等材料製造晶圓。 其次，在步驟204(晶圓處理步驟)中，使用步驟201〜 步驟203所準備的光罩與晶圓，如後述般地藉由微影技術 在晶圓上形成實際之電路等。繼之，在步驟205(元件組裝 步驟），使用經步驟204所處理的晶圓進行元件組位。該步 驟205中，視需要包括切割步驟、打線步驟、封裝步驟(晶 片封入)等的步驟。 最後，在步驟206(檢查步驟）中，進行步驟205所製作 之元件之動作的確認測試、耐久性測試等的檢查。經過此 製程後，元件製作完成，即可出貨。 圖8爲顯示半導體元件之製作時之上述步驟204之詳 細流程例。圖8中，步驟11(氧化步驟)使晶圓表面氧化。 步驟212中（CND步驟），於晶圓表面形成絕緣膜。步驟 213(電極形成步驟），藉由蒸鍍於晶圓上形成電極。步驟 214(離子植入步驟），則將離子植入晶圓。以上之步驟211 〜步驟214之各驟，構成晶圓處理各階段的前處理製程， 並在各階段中，視需要之處理選擇實施。 在晶圓製程(Process)的各階段中，當結束上述前處理 製程後，即實施如下之後處理製程。該後處理製程中，首 _____48_______ 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 1233148 A7 - - B7 '----—-— 五、發明說明岭下In addition, in the body room 12, a reticle stage RST for accommodating the exposure body 22 is provided to carry in the reticle R, and from the reticle stage RST, the private- and Zhang-size scales are applicable to Chinese National Standards (CNS) A4 Specifications (Coffee X Tears Public Love) -------------------- Order --------- Line (Please read the precautions on the back before filling (This page) A7 1233148 ______B7__ V. Description of the invention The reticle loading chamber 18 of the reticle loading system (80, 82) is removed, and the reticle loading chamber 18 can also be supplied through the chemistry Filter CFla for air. Therefore, the inside of the reticle loading chamber 18 can be chemically cleaned and temperature stabilized. In addition, the exposure apparatus 10 in this embodiment constitutes an air circulation path that returns from the machine room 14 to the machine room 14 through the body room 12 and an exhaust path (42, 48, 66) Chemical filters CF2a and CF2b, which have higher removal rates of chemical pollutants than the first filtering device, are respectively arranged on the paths for capturing outside air from the OA port 50 provided in the machine room 14. Therefore, the chemical filter CF2a disposed in the exhaust path from the main body chamber 12 to the machine chamber 14 can efficiently remove chemical contamination in the air due to deaeration generated by the exposure apparatus main body 22 substance. In addition, the chemical filter CF2b disposed on the path for capturing external air from the OA port 50 in the machine room 14 can capture chemically clean external air from which chemical pollutants have been removed in the device. Then, these air are once again passed through the chemical filters CFla and CFlb through the air conditioner into the body chamber 12. Therefore, the environmental atmosphere around the exposure device body 22 in the main body chamber 12 can be maintained in a chemically clean state (chemically clean state), and accordingly, the illuminance due to dew condensation of the optical member can be effectively suppressed for a longer period of time. Downsides, etc. Furthermore, the chemically clean air 'of the chemical pollutants removed by these chemical furnaces CF2a, CF2b is sent to the chemical filters CFla, CFlb. In addition, since the exhaust path from the main body room to the machine room or the path of outside air in the machine room is a good place that does not need to consider temperature fluctuations, the temperature of the gas changes even after passing ___40 ______ This paper standard applies to China Standard (CNS) A4 specification (210 X 297 mm) -------- Order --------- ^ i ^ w— (Please read the precautions on the back before filling this page) 1233148 A7 ----------- B7_____ V. Description of the invention q,) Larger movement will not cause any impact, so a filtering device capable of removing chemical pollutants can be used. Therefore, the life of the chemical filters CFla and CFlb becomes longer ', which does not need to be replaced even after a long period of use. In addition, at least the inner wall portion of the gas supply pipe 24 downstream of the chemical filter CFla is formed of a material that has less degassing such as SUS or Teflon (registered trademark), so it is downstream of the chemical filter CFla There is almost no outgassing in the gas supply pipeline portion, so the chemically clean air can be surely sent to the exposure chamber 16, the reticle loading chamber 18, and the wafer loading chamber 20 containing the exposure device body 22. In the above-mentioned embodiment, although the temperature adjustment device has a configuration including the cooler 52 and the heaters 56, 62, the temperature adjustment device of the present invention is not limited to this. For example, at the time of exposure, the ambient atmosphere of the exposure device body 22 is higher in temperature than the energy of the exposure light, and the air provided from the exposure chamber 16 is a circulation system that returns to the temperature adjustment device through the return section. In the above-mentioned embodiment, the temperature of the air returned to the temperature adjustment device must be higher than the set temperature (target temperature), so only a cooler configuration may be provided. In such a case, the temperature of the gas that has been heated above the target temperature is cooled by the cooler, and the temperature of the gas before the chemical filter CFla, ^^^ passes can be adjusted within a predetermined range. In addition, when a gas cooled below the target temperature is supplied from the outside, a measure of heating the gas through a heater is used to 'adjust the target temperature to the filter device. The temperature of the gas and the body of the gas is within a predetermined range.' Therefore, only a heater is required. In addition, in the above-mentioned embodiment, although it is explained about the internal circulation of the body _______41______ ^ The paper size applies the China National (CNS) A4 standard (210 X 297 public love -------- order ------) --- Line (please read the precautions on the back before filling this page) I233148 A7 ____— _ V. Description of the invention The situation where the ring supplies air-conditioning gas, but it is not limited to this. After passing through the chemical filters CF1a and CF1b, the chamber 14 can supply air to the main body chamber 12 and can be discharged from the main body chamber 12 to the outside. In this case, it is installed outside the mechanical chamber 14 and the like. It is preferable that the gas intake inlet be equipped with an over-cylinder device with a high removal rate of chemical pollutants. At this time, the same effect as that of the above embodiment can also be obtained. In addition, the temperature change suppression filter 12 (^ The specific figures such as U02, U02, and filter device 130, such as the specific figures of the density of the carbon fiber constituting the filter medium and the total thickness of the gas passing direction, are just examples, and the present invention is not limited to these figures In addition, in the above embodiment Although the case where carbon fibers having a honeycomb structure are used as the filter medium constituting the filter device 130 and the filter unit 126 of the temperature-suppressing filters 120 and 1202 is described, it is not limited thereto. As such filter media, for example, Materials that can remove at least one of an acidic substance, an alkaline substance, and an organic substance can be used. Specifically, for example, an additive type in which one of a positive ion component and an anionic component is added to a porous member such as activated carbon or ceramic, Or an ion exchange type composed of a fiber 'resin film having an ion exchange group and the like, and a substance adsorption type composed of porous members such as granular activated carbon, powdered activated carbon, and ceramics. When using a filter medium made of various materials other than carbon fiber, in order to suppress the water absorption and release of the filter device, it is also possible to reduce the filling rate of the furnace medium, or to provide a space between a plurality of filter media, etc. To get the same L-— __42 this national standard (CNS) A4 specification (21Q χ 297) ) -------------------- Order --------- line ^ w. (Please read the precautions on the back before filling this page) 1233148 A7 __ ___B7 ____ V. Description of the invention (less () efficacy. In addition, especially in the aforementioned second temperature-change suppression filter 1202, as the plurality of filter media constituting the filter unit, it is not necessary to use filters each formed of the same material. The medium may be a combination of a filter medium for removing alkaline substances, a filter medium for removing acidic substances, a filter medium for removing organic substances, and the like. The first temperature-change suppression filter mentioned in the above embodiment may be used. The experimental example of the filter and the second temperature-change suppression filter are the results of experiments using carbon fiber as a filter medium. When using a filter medium made of the other materials described above, the amount of water absorbed by the unit weight of the filter medium varies. Of course, the experimental results are different, and the optimal 値 (the filling rate of the filter medium, or the width of the gas passing direction) when designing the filters are also different. In addition, in the above embodiment, activated carbon filters, zeolite filters, etc. can be used as chemical filters CFla, CFlb, CF2a, CF2b. 'At this time', it is generally possible to completely remove the generated in clean rooms and exposure equipment. Chemical impurities. That is, as an impurity existing in a room, or in a space between optical elements in a projection optical system and an illumination optical system, a siloxane (a substance having a Si-o chain as an axis) or a silamine ⑺ 丨 with a chain as an axis Substances) will become a problem. In detail, the siloxane is a so-called "ring sand oxygen house" whose Si_0 chain becomes a ring, which is included in the adhesive, sealant, paint, etc. used in the projection exposure device, and changes over a long period of time. After that, degassing occurred. The ring-shaped sand oxygen laboratory 'is well-known to adhere well to the surface of a semiconductor substrate such as a silicon wafer or the surface of a dielectric body of a lens. When it is irradiated with ultraviolet light (UV light), it will oxidize and cause the surface of the optical element. Oxy-silicification, paper size applies Chinese National Standard (CNS) A4x 297 ^ 2 ^) ---- ~--------- 1 --------- ^ (Please read the Please note this page before filling in this page) 1233148 A7 ___ B7_________ 5. Inventive note (ip »Reasons for fogging in the system. (Please read the precautions on the back before filling this page) In addition, in silamine, as most users in The aforementioned treatment agents used in the process of photoresist coating include HMDS (hexamethyldisilazane) with a Si number of 2. The HMDS, which reacts with water, changes to easily attach to the surface of a semiconductor substrate or The substance on the surface of the dielectric body (hydrolysis)-silanol, when irradiated with ultraviolet light again, will oxidize like siloxane, and cause the silicon oxide-based fogging on the surface of the optical element. Also, silamine In the case of the above-mentioned hydrolysis, ammonia is generated, and the ammonia and siloxane coexist even more. It is easy to cause fogging on the surface of optical elements. Activated carbon filters or zeolite filters can remove silicon-based organic materials such as siloxane or silazane. In addition, use KrF excimer laser light or ArF laser light or shorter In a projection exposure device in which light of a wavelength is used as illumination light for exposure, the surface of an optical element is generally cleaned according to a light-cleaning method, but organic matter (hydrocarbons) attached to the surface of the optical element is eliminated by the light-cleaning method. (Compounds, etc.), it will float in the air, and the organic matter can be removed by activated carbon filter or zeolite filter. In addition, in addition to silicon-based impurities, indoor wiring or plastic Impurities such as gas, plasticizers (phthalate esters), and flame retardants (phosphoric acid, chlorine-based substances) also continue to form, but this plasticizer or flame retardant can also be filtered by activated carbon filters or zeolites Moreover, in the above-mentioned embodiment, the driving conditions for changing the lighting conditions of the first air blower 58, the second air blower 64, and the reticle, and the driving means for driving the optical element (for example, Zoom lens, field of vision, etc.) This blower and driving member has a motor and a bearing that bears the motor shaft as the sliding part ---- 44___ This paper size applies to China National Standard (CNS) A4 (210 X 297) (Mm) 1233148 A7 ___B7_____ 5. Description of the Invention (fy) Lubricants are used to maintain the smooth rotation of bearings. As the lubricant of the lubricant, a material that can suppress the generation of outgassing, such as a fluorine-based lubricant, is used. The lubricating gas (organic matter) generated when the lubricating oil is heated in a nitrogen atmosphere at 60 ° C for 10 minutes for about 10 mg of the lubricating oil is 150 μE / ιη3 or less in terms of toluene. In particular, the amount of outgassing (organic matter) generated under the above heating conditions is preferably 100 pg / m3 or less in terms of toluene equivalents of tritium. In addition, it is ideal to be below 40 pg / m3. Such 40 pg / m3 lubricating oil is, for example, Demuna (product name) manufactured by Daikin Corporation. As described above, the lubricating oil described above can be used in the sliding portion of the blower or drive member disposed indoors, thereby suppressing indoor pollution and prolonging the life of the chemical filter disposed indoors. In addition, although the above-mentioned embodiment describes the case where a chemical filter is installed near the machine room of the main body chamber and the wafer stage, it is not limited to this, and may be provided in a reticle loading chamber or a crystal supply chamber. At the air supply opening of the round loading chamber. According to this, the inside of the reticle loading chamber and wafer loading chamber can be further chemically cleaned. Therefore, when performing reticle replacement or wafer replacement, even the loading chamber and the exposure chamber It is connected, and it does not pollute the ambient atmosphere in the exposure chamber, and it can maintain the exposure accuracy with high precision. In addition, the arrangement of the chemical filters CFla, CFlb, etc. described in the above embodiment, the configuration of the air-conditioning apparatus, the ventilation path, and the like shown in Fig. 1 can be arbitrarily made. In addition, in the above-mentioned embodiment, although the case where the reticle loading chamber, wafer loading chamber, and exposure chamber are installed in the main body is described, it is not limited to this ___ 45___ This paper standard applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------------------- Order --------- line (please read the precautions on the back before filling (This page) 1233148 A7 ________ B7 ______ V. Description of the invention (4) 'Only the exposure room is set in the main body room, or in other environmental control rooms, the reticle loading room is set together or separately, and the wafer loading room is also can. In addition, in the above-mentioned embodiment, the case where the machine room is different from the main body room has been described, but it is not limited to this. The main body room and the machine room that house the exposure apparatus body may be formed by dividing one room with a partition wall. In FIG. 1, the machine room is arranged adjacent to the main body room. However, the machine room may be arranged under the machine (public space) of the clean room. At this time, the light source can also be arranged under the machine. In addition, although the air conditioner controls the temperature of the air, it can also be added for pressure control. In addition, when using ArF excimer laser light (wavelength 193nm) as the illumination light for exposure, it is equivalent to the illumination optical system 28, and is also supplied to the lens barrel of the projection optical system PL or the housing that houses the projection optical system PL. Inert gas (nitrogen, etc.). When F2 laser light (wavelength 157nm) is used as the illumination light for exposure, a reticle stage and a wafer stage are arranged in each of the cells. In addition to the illumination optical system 28 and the projection optical system PL, An inactive gas (helium, etc.) is supplied between the illumination optical system 28 and the projection optical system PL, and between the projection optical system PL and the wafer W, respectively. Therefore, in an exposure device that contains at least a part of the illumination light path from the light source to the wafer W and contains the inside of the light source, and supplies an inert gas to the inside thereof, for example, an exhaust gas that passes through the inert gas supplied to the illumination optical system passes through. A chemical substance removal filter (chemical filter) is preferably provided in the middle of the gas path or at the outlet. Of course, it is also possible to provide chemical filtration in the inflow path of the inert gas or at the inlet. In this case, it is especially effective when the recovered inactive gas is cleaned and reused. In addition, if _ ^ --- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) —I ---- Order --------- Line (Please read the Please fill in this page again) 1233148 A7 _B7________ V. Description of the invention As mentioned above, for example, when using light in the vacuum ultraviolet region with a wavelength of about 120nm to 200nm as the illumination light for exposure, the above inert gas (nitrogen, helium, etc.) can be used ) Comes as air conditioner. Therefore, the environmental control device of the present invention includes a gas adjustment device configured to supply inert gas and the like and adjust the temperature. Moreover, in the above-mentioned embodiment, although the case where KrF excimer laser, ArF excimer laser, etc. are used as a light source is explained, it is not limited to this, F2 laser and Ar2 laser may also be used as a light source, or it may be used Metal vapor lasers or YAG lasers use these higher harmonics as illumination light for exposure. Alternatively, a single-wavelength laser light in the infrared or visible range oscillated by a DFB semiconductor laser or an optical fiber laser is amplified by, for example, a fiber amplifier doped with bait (Er) or both bait and yttrium (Yb). Non-linear optical crystals can be converted into higher harmonics of ultraviolet light and used as illumination for exposure. In addition, the present invention is not only applicable to an exposure device of a step-and-repeat method, a step-scan method, or a step and stitch method, for example, it can also be applied to an exposure device of a mirror projection, alignment, and proximity method , And 'photo repeater. That is, regardless of the configuration of the exposure device body, the present invention can be adopted as long as it is an exposure device having an environmental control device (air conditioner, etc.). [Element manufacturing method] Next, an embodiment of a method for manufacturing a element using the above-mentioned exposure device in lithography will be described. Figure 7 shows the semiconductor chip and liquid crystal surface of Tibetan coin (1C or LFI)% — ___ £ 7 ____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------- ^ --------- $ (Please read the precautions on the back before filling out this page) 1233148 A7 _B7___ V. Description of the process of manufacturing (ft) board, LCD, thin-film magnetic head, micro-machine, etc.) Illustration. As shown in FIG. 7, first, in step 201 (design step), the function of the element, the performance design (such as the circuit design of the semiconductor element, etc.) are performed, and the pattern design to realize the function is performed. Next, in step 202 (photomask making step), a photomask is made, and a designed circuit pattern is formed on the photomask. On the other hand, in step 203 (wafer manufacturing step), a wafer is manufactured using a material such as silicon. Next, in step 204 (wafer processing step), the photomask and wafer prepared in steps 201 to 203 are used to form actual circuits on the wafer by lithography technology as described later. Next, in step 205 (component assembly step), the component assembly is performed using the wafer processed in step 204. This step 205 includes steps such as a cutting step, a wire bonding step, a packaging step (wafer sealing), and the like, as necessary. Finally, in step 206 (inspection step), inspections such as a confirmation test, an endurance test, and the like of the operation of the element produced in step 205 are performed. After this process, the components are completed and ready for shipment. Fig. 8 shows an example of a detailed flow of the above-mentioned step 204 when the semiconductor device is manufactured. In FIG. 8, step 11 (oxidation step) oxidizes the wafer surface. In step 212 (CND step), an insulating film is formed on the surface of the wafer. Step 213 (electrode formation step), forming an electrode on the wafer by evaporation. In step 214 (ion implantation step), ions are implanted into the wafer. Each of the above steps 211 to 214 constitutes a pre-processing process for each stage of wafer processing, and in each stage, a process is selected and implemented as needed. In each stage of the wafer process, after the above pre-processing process is completed, the following post-processing process is performed. In this post-processing process, the first _____48_______ This paper size applies the Chinese National Standard (CNS) A4 specification (21〇x297mm) -------------------- Order --------- Line (Please read the precautions on the back before filling in this page) 1233148 A7--B7 '----——-— 5. Description of the invention Lingxia
先於步驟215(光阻形成步驟），塗覆光阻於晶圓。繼之，方々 步驟216(曝光步驟），藉由前述說明之曝光裝置將光罩自勺胃 路圖案轉印於晶圓。其次，於步驟217(顯像步驟）中，將已 曝光之晶圓加以顯像，步驟218(鈾刻步驟）中，將殘留光阻 部分以外部分的外露構件，藉由蝕刻加以去除。繼之，於^ 步驟219(光阻除去步驟），將蝕刻結束後不需的光阻加以、淸 除。 R 藉由重覆進行前述前處理製程與後處理製程，在晶_ 上形成多重電路圖案。 根據使用以上說明之本實施形態的元件製造方法，医I 在曝光製程(步驟216)中使用上述實施形態之曝光裝置1〇 ，故能長期有效地抑制因化學污染物質及溫度變動等而導 致曝光精度的下降等，並據此而能生產良好地製造高樓層 度的元件。 上述本發明之實施形態雖係目前之極佳實施形態，然 熟悉微影系統的業者，在不超脫本發明之精神與範疇的情 形下，應有所對上述實施形態進行連想，而輕易地作成諸 多之附加、變形、置換。所有此種附加、變形、置換，撅 包含於如下記載之申請專利範圍所作最明確揭示之本發明 之範圍內。 ___49 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) # 訂---------線.Prior to step 215 (photoresist forming step), a photoresist is applied to the wafer. Then, in step 216 (exposure step), the photomask pattern is transferred from the stomach to the wafer by the exposure device described above. Next, in step 217 (development step), the exposed wafer is developed, and in step 218 (uranium engraving step), the exposed members other than the photoresist part are removed by etching. Next, in step 219 (photoresist removal step), unnecessary photoresist after the etching is finished is removed. R forms multiple circuit patterns on the crystal by repeating the aforementioned pre-processing and post-processing processes. According to the device manufacturing method of this embodiment described above, the medical device I uses the exposure device 10 of the above embodiment in the exposure process (step 216), so it can effectively suppress exposure due to chemical contamination substances and temperature fluctuations for a long time. Due to the decrease in accuracy, and the like, it is possible to produce a component with a high floor level. Although the above-mentioned embodiment of the present invention is the current best implementation, those who are familiar with the lithography system should make a contemplation of the above-mentioned embodiment without departing from the spirit and scope of the present invention, and easily create it. Many additions, deformations, replacements. All such additions, modifications, and replacements are included in the scope of the present invention which is most clearly disclosed in the patent application scope described below. ___49 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) # Order --------- line.