JP2005099739A - Pattern production system, exposure system, and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize precise finishing by forming a pattern by adjusting variance in finishing of the width of a pattern line due to deterioration of an etchant etc. <P>SOLUTION: In a pattern production system, resist coated on copper foil on the substrate is exposed to light, by direct drawing, on the basis of a width of a line forming a pattern and an exposure quantity designated by pattern data 100 for processing, the exposed resist is developed to form a resist pattern, and the copper foil is etched to form an etched pattern. An image of the etched pattern is scanned and image information 200 is obtained. The width of the line forming the pattern represented by the image information 200 and the width of the line forming the pattern of the target etched pattern are compared, and the width of the line forming the pattern designated by the pattern data 100 for processing is adjusted on the basis of the result of the comparison. The resist is exposed to light, by direct drawing, with the adjusted line width. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a pattern manufacturing system that suppresses variations in finish due to deterioration of a developing solution or an etching solution generated when manufacturing a circuit pattern or the like of a printed circuit board.

  For example, in the case of manufacturing a circuit pattern of a printed circuit board, conventionally, a photomask is created, a resist on the substrate is exposed and cured using this photomask, and then the resist is developed to form a resist pattern. A method of forming a circuit pattern by etching a copper foil on a substrate using this resist pattern is used. In the above conventional method, when etching is performed, the amount of etching of the copper foil on the substrate changes depending on the density of the resist pattern lines, and the line width of the finished circuit pattern lines varies. It was. Therefore, there is one in which input data is corrected in advance based on the density of circuit pattern lines to be formed, and the pattern lines of the photomask are adjusted (for example, Patent Document 1).

  Further, since the over-etching occurs when the line width of the resist pattern is equal to or smaller than the predetermined line width, the line width of the pattern line of the resist pattern where the over-etching occurs is measured in advance, In some cases, a correction line is added so that the line width of the pattern line of the resist pattern is increased (for example, Patent Document 2).

Alternatively, in order to prevent variations in the finish such that the etchant deteriorates due to repeated use of the etchant and the line width of the etched circuit pattern is different, it can be used in an empty area of the board (an area other than the wiring part). Some test patterns are embedded, and after etching, the test pattern is image-recognized to check the change in the etched amount, and control is performed to change the supply of new etchant and the shower pressure accordingly (for example, Patent Document 3).
JP-A-6-186724 JP 2001-134627 A JP-A-9-162522

  However, in the methods of Patent Document 1 and Patent Document 2 described above, the line width of the finished circuit pattern line is corrected by correcting the line width of the input data, but iterative processing is performed. As a result, the developing solution and the etching solution are gradually deteriorated, and it is not possible to suppress variations in the finish caused by the deterioration. In addition, in order to suppress the variation in the finish due to the deterioration of the etching solution by the method of creating such a photomask, it is necessary to recreate the photomask many times, resulting in high production costs.

  On the other hand, in Patent Document 3, the change in the amount of pattern lines etched is confirmed, and the progress of etching is controlled so that the finish becomes constant by changing the supply of a new etching solution and the shower pressure. However, such control by supplying a new etching solution or changing the shower pressure has a problem that responsiveness is not stable and variations in the finish remain.

  In recent years, with the increasing complexity and high definition of circuit patterns, a more accurate finish is required, and variations in the finish caused by such deterioration of the etching solution cannot be ignored.

  SUMMARY OF THE INVENTION In view of the above circumstances, the present invention aims to provide a pattern manufacturing system with high finishing accuracy that does not increase the production cost and does not vary in the finish due to the deterioration of the developer or etching solution. To do.

The pattern manufacturing system of the present invention is based on processing pattern data for forming a target formation pattern, and an exposure unit that directly draws and exposes a resist on a material to be etched attached to a substrate with a predetermined exposure amount,
A developing unit for developing the exposed resist to form a resist pattern;
An etching portion for forming a formation pattern by etching the material to be etched;
Based on one or a combination of a difference between the shape of the resist pattern and the shape of the target resist pattern, a difference between the shape of the formation pattern and the shape of the target formation pattern, and a component that causes the difference And a correction unit that corrects the processing pattern data and / or the predetermined exposure amount.

  Here, the “processing pattern”, “resist pattern”, “formation pattern”, and “target formation pattern” are expressed by coordinate values and line widths of pattern lines.

  Further, the “target formation pattern” is expressed by the formation pattern to be formed, the coordinate value and the line width of the pattern line at that time. The “target resist pattern” is a resist pattern to be formed, and is represented by the coordinate value and line width of the pattern line at that time.

  The “material to be etched” refers to a material that is etched by an etchant, such as a copper foil attached on a substrate.

Further, the correction unit scans the formation pattern after etching to obtain image information;
A line width comparing means for comparing the line width of the pattern line of the image information and the line width of the pattern line of the target formation pattern;
There may be provided adjusting means for adjusting at least one of the predetermined exposure amount and the line width of the pattern line designated by the processing pattern data based on the comparison result by the line width comparing means.

Alternatively, the correction unit scans the resist pattern after development to obtain image information; and
A line width comparing means for comparing the line width of the pattern line of the image information and the line width of the pattern line of the target resist pattern;
There may be provided adjusting means for adjusting at least one of the predetermined exposure amount and the line width of the pattern line designated by the processing pattern data based on the comparison result by the line width comparing means.

  “Adjustment of the line width of the pattern line specified by the processing pattern data” may be a method in which the correction amount is obtained and the line width of the processing pattern data is directly rewritten to the line width obtained by adding this correction amount. The pattern data may not be directly rewritten, and the adjusted line width may be acquired separately by adding the obtained correction amount and the line width specified by the processing pattern data.

  "Comparison between the line width of the pattern line of the image information and the line width of the pattern line of the target formation pattern" shows the difference between the line width of the pattern line of the image information and the line width of the pattern line of the target formation pattern. Anything can be used as long as it is possible. For example, the line widths of the corresponding pattern lines may be compared, or the areas of the pattern lines may be obtained to compare the areas. Further, the comparison may be performed by obtaining a difference, or may be performed by obtaining a ratio.

  In addition, the adjustment unit stores in advance a relationship between a correction amount for correcting the line width of the pattern line specified by the processing pattern data and the comparison result, and is obtained by the line width comparison unit based on the relationship. A correction amount corresponding to the comparison result may be obtained, and the line width of the pattern line designated by the processing pattern data may be adjusted using the correction amount.

  The “comparison result” is a result of comparing the line width of the formation pattern obtained by etching and the line width of the target formation pattern as a target, or the line width and target of the resist pattern obtained by development. Is the result of comparing the line width of the target resist pattern to be processed, and the "correction amount" is the line of the pattern line of the processing pattern data in order to make the line width of the formation pattern after etching the line width of the target formation pattern. The amount to correct the width, or the amount to correct the line width of the pattern line of the processing pattern data so that the line width of the resist pattern after development becomes the line width of the target resist pattern. `` Relationship with '' can be obtained by actually measuring the line width of the pattern line after etching or the line width of the pattern line of the resist pattern after development. That. For example, the relationship obtained by performing etching or development using test patterns including pattern lines having different line widths and measuring the line widths of the resulting patterns can be used.

  Each manufacturing apparatus has its own locality such that the result of formation varies depending on the location even if the processing is performed under the same processing conditions.

Accordingly, the line width comparison means obtains a comparison result for each section obtained by dividing the target formation pattern into a plurality of sections,
The adjustment means stores in advance the relationship between the correction amount for adjusting the line width of the pattern line designated by the processing pattern data and the comparison result for each section, and based on the relationship, the line width comparison means A correction amount for each division corresponding to the obtained comparison result for each division is obtained, and the line width of the pattern line specified by the processing pattern data is adjusted for each division using the correction amount. Is desirable.

  Alternatively, the adjustment unit stores in advance a relationship between a correction amount for correcting the predetermined exposure amount and a comparison result, and calculates a correction amount corresponding to the comparison result obtained by the line width comparison unit based on the relationship. The predetermined exposure amount may be adjusted using the correction amount.

  The “relationship between the correction amount and the comparison result” uses an experimentally obtained value by actually measuring the line width of the formed pattern line after etching or the line width of the pattern line of the resist pattern after development. be able to. For example, the relationship obtained by performing etching and development using test patterns including pattern lines having different line widths and measuring the line widths of the patterns obtained as a result can be used.

The correction unit includes a deterioration detection unit that detects deterioration of the developer used in the developing unit;
There may be provided adjusting means for adjusting at least one of the predetermined exposure amount and the line width of the pattern line designated by the processing pattern data based on the detection result by the deterioration detecting means.

  The deterioration detecting unit may include a measuring unit that measures the amount of dissolved resist dissolved in the developer used in the developing unit, and may detect the deterioration of the developer based on the measurement result of the measuring unit.

  The “resist dissolution amount” can be determined, for example, by the amount of resist dissolved in the developer using a neutralization titration method or the like.

  The deterioration detecting means may detect the deterioration of the developer based on the processing area of the substrate developed by the developing unit.

  “Processing area” is the cumulative area of the portion of the resist dissolved on the substrate with the developer, and the area of the portion where the resist is dissolved can be determined from, for example, the area drawn on the resist by the exposure apparatus. Alternatively, the area of the portion where the resist is dissolved can be approximately obtained from the number of substrates developed by the developing device.

  The deterioration detecting unit may include a measuring unit that measures a PH value of a developing solution used in the developing unit, and detects deterioration of the developing solution based on a measurement result of the measuring unit.

  The adjustment unit stores in advance a relationship between deterioration of the developer used in the developing unit and a correction amount for correcting the line width of the pattern line, and according to a detection result detected by the deterioration detection unit based on the relationship. A correction amount corresponding to the deterioration may be obtained, and the line width of the pattern line designated by the processing pattern data may be adjusted using the correction amount.

  “Correction amount” is an amount for correcting the line width of the pattern line of the processing pattern data so that the line width of the resist pattern after development is finished to a desired line width. “Relationship between correction amount and detection result” "" Can be obtained by experimentally measuring the line width of the pattern line of the resist pattern after development. For example, it is possible to use a relationship obtained by performing development using test patterns including pattern lines having different line widths and measuring the line widths of the resulting patterns.

  Each manufacturing apparatus has its own locality such that the result of formation varies depending on the location even if the processing is performed under the same processing conditions.

  Therefore, the adjustment unit stores in advance the relationship between the deterioration of the developer used in the developing unit and the correction amount for correcting the line width of the pattern line for each of the sections into which the substrate is divided into a plurality of sections, Based on the relationship, a correction amount for each of the sections corresponding to the deterioration corresponding to the detection result detected by the deterioration detection means is obtained, and the line of the pattern line designated by the processing pattern data using the correction amount It is desirable to adjust the width for each section.

  The adjustment unit stores in advance a relationship between deterioration of the developer used in the developing unit and a correction amount for correcting the predetermined exposure amount, and according to a detection result detected by the deterioration detection unit based on the relationship. A correction amount corresponding to the deterioration may be obtained, and the predetermined exposure amount may be adjusted using the correction amount.

The correction unit includes a deterioration detection unit that detects deterioration of an etching solution used in the etching unit,
There may be provided adjusting means for adjusting at least one of the predetermined exposure amount and the line width of the pattern line designated by the processing pattern data based on the detection result by the deterioration detecting means.

  Due to the deterioration of the etching solution, the copper foil on the substrate is less etched, and the line width of the pattern line of the formation pattern formed after the etching also changes. Therefore, the “detection result” for detecting the deterioration of the etching solution only needs to represent the etching ability of the etching solution, and for example, the PH value of the etching solution can be used.

  Therefore, the deterioration detecting means may have a measuring means for measuring the PH value of the etching solution used in the etching section, and may detect the deterioration of the etching solution based on the measurement result of the measuring means.

  Further, the adjustment unit stores in advance a relationship between deterioration of the etching solution used in the etching unit and a correction amount for correcting the line width of the pattern line, and a detection result detected by the deterioration detection unit based on the relationship It is also possible to obtain a correction amount corresponding to the deterioration corresponding to and adjust the line width of the pattern line designated by the processing pattern data using the correction amount.

  Further, the adjustment means stores in advance the relationship between the deterioration of the etching solution used in the etching section and the correction amount for correcting the line width of the pattern line for each of the sections into which the substrate is divided into a plurality of sections, A correction amount for each of the sections corresponding to the deterioration corresponding to the detection result detected by the deterioration detection means based on the relationship is obtained, and the line width of the pattern line specified by the processing pattern data using the correction amount May be adjusted for each section.

  Further, the adjustment unit stores in advance a relationship between deterioration of the etching solution used in the etching unit and a correction amount for correcting the predetermined exposure amount, and a detection result detected by the deterioration detection unit based on the relationship. It is also possible to obtain a correction amount corresponding to the deterioration corresponding to the above and adjust the predetermined exposure amount using the correction amount.

In addition, the exposure apparatus of the present invention directly draws and exposes the resist on the material to be etched attached to the substrate with a predetermined exposure amount based on the processing pattern data for forming the target formation pattern through development and etching. An exposure unit to perform,
Difference between the shape of the resist pattern after development and the shape of the target resist pattern, the difference between the shape of the formation pattern after etching and the shape of the target formation pattern, and the difference including at least one of the components that cause the difference A difference information acquisition unit for acquiring information;
A correction unit that corrects the processing pattern data and / or the predetermined exposure amount based on the difference information is provided.

  The difference information acquisition unit acquires the difference information by comparing the image information of the resist pattern and the shape of the target resist pattern and / or comparing the image information of the formation pattern and the shape of the target formation pattern. It may be a thing.

  Further, the difference information acquisition unit may include a unit that acquires the image information.

  Further, the difference information acquisition unit may acquire the difference information based on the state of the developer and / or the etching solution.

  Further, the difference information acquisition unit may include a unit that detects the state of the developer and / or the etching solution.

  The difference information acquisition unit may include a unit that detects the number of times of development using the same developer and / or the number of times of etching using the same etchant.

  The difference information acquisition unit may acquire the difference information based on the number of times of development using the same developer and / or the number of times of etching using the same etchant.

  The difference information acquisition unit may detect the difference based on the number of times of development using the same developer and / or the number of times of etching using the same etchant and the size of the substrate.

  Further, the difference information acquisition unit performs the number of times of development using the same developer and / or the number of times of etching using the same etchant, and the development and / or the etching on the substrate surface. It may be detected based on the area.

  Further, the difference information acquisition unit may include a unit for obtaining the number of times of development using the developer and / or the number of times of etching using the same etching solution based on the number of exposures. .

  Further, the difference information acquisition unit may acquire the difference information based on the number of exposures.

The difference information acquisition unit acquires the difference information by comparing the image information of the resist pattern and the shape of the target resist pattern and / or comparing the image information of the formation pattern and the shape of the target formation pattern. A first acquisition unit to
A second acquisition unit that acquires the difference information based on the number of exposures;
It is desirable to further include a switching unit that switches between the first unit and the second unit.

  The switching unit may be switched each time the difference information is acquired by the first acquisition unit and the difference information is acquired by the second acquisition unit a predetermined number of times.

  The correction unit may perform the correction for each divided region divided along the substrate surface.

  The difference information acquisition unit may acquire the difference information for a part of the substrate surface.

The exposure method of the present invention performs direct drawing exposure with a predetermined exposure amount on a resist on an etching target material attached to a substrate based on processing pattern data for forming a target formation pattern through development and etching. A method,
Obtain difference information including at least one of a difference between the shape of the resist pattern and the shape of the target resist pattern, a difference between the shape of the formation pattern and the shape of the target formation pattern, and a component that causes the difference. And
The processing pattern data and / or the predetermined exposure amount is corrected based on the difference information.

  The difference information may be acquired by comparing the image information of the resist pattern and the shape of the target resist pattern and / or comparing the image information of the formation pattern and the shape of the target formation pattern. .

  Further, the difference information may be acquired based on the state of the developer and / or the etching solution.

  Further, the difference information may be obtained based on the number of times of development using the same developer and / or the number of times of etching using the same etchant.

  Alternatively, the difference information may be acquired based on the number of times of exposure.

  According to the pattern manufacturing system of the present invention, the image information obtained by scanning the formation pattern after etching is compared with the target formation pattern after etching that is originally required after formation, and the target that is originally required based on the comparison result. If the accuracy of the formation pattern is not obtained, adjust the line width and exposure amount of the pattern line specified in the processing pattern data, and use the adjusted line width and exposure amount with a direct drawing type exposure apparatus. Since the exposure is performed by directly drawing on the resist, it is possible to eliminate variations in the finish due to the deterioration of the developing solution or the etching solution.

  In addition, in the case of exposing a resist using a mask pattern drawn on a conventional film or glass original plate, it is necessary to recreate the mask pattern frequently in order to cope with such variations, which increases costs. By changing the line width and exposure amount of the pattern line as needed using a direct-drawing type exposure apparatus, it is possible to make adjustments so that the finish is always uniform without causing an increase in cost.

  Alternatively, by comparing the image information obtained by scanning the developed resist pattern with the target resist pattern that is originally required after development, it is possible to grasp the variation in the finish that occurs until the development process, Variations up to the development process can be adjusted.

  In addition, if it is possible to detect variations in the finish that occur in both the etching process and the development process, the line width and exposure amount of the pattern line specified in the processing pattern data corresponding to the process in which the variation has occurred can be detected. It becomes possible to make adjustments, and more appropriate correction can be performed.

  In addition, if an actual measurement result is stored as the relationship between the correction amount for correcting the line width of the pattern line and the comparison result, correction corresponding to each manufacturing apparatus can be performed.

  In addition, if the relationship between the correction amount for correcting the line width of the pattern line and the comparison result is stored in a plurality of categories, correction is made so as to eliminate variations in the finish due to the locality of the manufacturing equipment. Therefore, a more accurate and uniform finish can be achieved.

  In addition, by storing the actual measurement as the relationship between the correction amount for correcting the exposure amount and the comparison result such as the difference obtained by the comparison, the exposure amount is adjusted for the correction corresponding to each manufacturing apparatus. It becomes possible by doing.

  Also, the deterioration of the developer or etching solution is detected, and the line width and exposure amount of the pattern line specified by the processing pattern data are adjusted based on the detection result, and the adjusted line width and exposure amount are used. Since the exposure is performed by directly drawing on the resist with a direct drawing type exposure apparatus, it is possible to eliminate variations in the finish due to deterioration of the developing solution or etching solution.

  Further, if the developer deterioration is indirectly detected from the area of the developed resist, it is possible to detect the area exposed by the exposure apparatus or the processed substrate without providing a detection device that directly detects the deterioration of the developer. It is possible to grasp the deterioration state from the number of sheets.

  Further, by measuring the PH value of the developing solution and the PH value of the etching solution, it is possible to detect the deterioration of the developing solution and the etching solution.

  In addition, if an actual measurement result is stored as the relationship between the correction amount for correcting the line width of the pattern line and the detection result, correction corresponding to each manufacturing apparatus can be performed.

  Hereinafter, a first embodiment of a pattern manufacturing system of the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram illustrating a first embodiment of a pattern manufacturing system, and a case where a circuit pattern which is an example of a formation pattern is manufactured by the pattern manufacturing system 1 will be described. When a circuit pattern is formed on a substrate, first, a copper foil as a circuit forming material is stuck on the substrate in the copper foil sticking step A, and the upper surface of the copper foil stuck in the leveling step B is machined. Surface treatment is performed by polishing or chemical polishing, and in the lamination step C, a resist (resist material) is laminated on the surface of the surface-adjusted copper foil. Next, the pattern manufacturing system 1 of the present invention exposes the resist applied to the substrate, develops the exposed resist to form a resist pattern, and etches the copper foil on the substrate on which the resist pattern is formed. To form a formation pattern.

  The pattern manufacturing system 1 includes a direct drawing type exposure apparatus (exposure unit) 4 that exposes a pattern to a laminated resist material, a developing unit (development unit) 5 that develops the exposed resist to form a resist pattern, An etching apparatus (etching unit) 6 is provided that forms a formation pattern by etching a copper foil on a substrate on which a resist pattern is formed.

  The etching device 6 includes an image recognition device (image recognition means) such as an optical inspection machine (AOI) using a CCD camera so as to obtain image information 200 obtained by scanning a formation pattern formed by etching a copper foil. ) 60 is provided, and the image recognition apparatus 60 is connected to the exposure apparatus 4 via the network 8, and the image information 200 is transmitted from the image recognition apparatus 60 to the exposure apparatus 4.

  A target formation pattern (circuit pattern to be actually formed) designed using CAD (Computer Aided Design) or the like is taken into CAM (Computer Aided Manufacturing) 7, and the CAM 7 performs imposition layout processing of the target formation pattern. For processing that includes coordinate values, line width, etc. for processing circuit patterns after adding additional information such as marking for alignment, symbol data for identification, dummy data for pattern equalization, etc. It is converted into pattern data 100 (for example, Gerber data) and output to the exposure apparatus 4.

  As shown in FIG. 2, the exposure apparatus 4 uses a data conversion means 41 that converts the processing pattern data 100 input from the CAM into a format suitable for processing, and a processing pattern so that the circuit pattern is finished as designed. A correction unit 45 that corrects the exposure amount of the pattern data and the exposure apparatus, and an exposure control means (including an exposure light source) 44 that performs exposure according to the processing pattern data 100 are provided. Hereinafter, in the present embodiment, the case where the correction unit 45 is provided in the exposure apparatus 4 will be described. However, a correction apparatus (correction unit) provided with the correction unit 45 in another computer is connected to the exposure apparatus 4. May be.

  Further, the correction unit 45 compares the image information 200 recognized by the image recognition device 60 after etching with the target formation pattern 201 to obtain a comparison result (difference information) 202, and a line width comparison unit (difference information acquisition unit) 42. And an adjustment means 43 for adjusting the processing pattern data 100 and the exposure amount so that the formed pattern after etching is brought close to the target formed pattern 201 based on the obtained comparison result 202.

  As the exposure apparatus 4, a direct drawing apparatus that directly draws on a resist using a laser or the like is used. For example, as shown in FIG. 3, the laser direct drawing apparatus 40 divides the laser beam LB emitted from the laser generator into a plurality of drawing light beams L via a beam splitter or beam separator, and the divided light beams are arranged in a line. The drawing light beam LL is arranged so as to reach the drawing table T and draws on the substrate S set on the drawing table T in the main scanning direction (Y direction) and the sub-scanning direction (X direction). The light beam LL is scanned to draw with dots arranged in a line on the substrate S. Specifically, it is disclosed in Japanese Patent Application Laid-Open Nos. 7-15993 and 9-323180. Alternatively, a spatial light modulation element such as an LCD (Liquid Crystal Display Element) or DMD (Digital Micromirror Device) may be used as the direct drawing type exposure apparatus.

  When drawing on the resist on the substrate with such a laser direct drawing apparatus 40, the processing pattern data 100 converted into raster data is used as drawing data, and the exposure control means 44 performs exposure based on the drawing data. Is done. The exposure is performed based on the standard exposure amount set in the apparatus, but the exposure amount can be adjusted as necessary. In order to adjust the exposure amount, the exposure amount obtained by the adjusting unit 43 can be transmitted to the exposure control unit 44 as information different from the drawing data. However, the exposure amount is represented by multivalued pixels in the drawing data. It is also possible to convert the drawing data into multiple values corresponding to the exposure amount obtained by the adjusting means 43 and transmit it to the exposure control means 44 (for example, one pixel is expressed by 255 gradations, and 255 is the maximum exposure). The smaller the numerical value representing the amount, the smaller the exposure amount).

  Here, the operation when the same circuit pattern is repeatedly manufactured using the pattern manufacturing system 1 will be described with reference to the flowchart of FIG.

  First, in order to manufacture a circuit pattern, the exposure apparatus 4 receives the processing pattern data 100 from the CAM (S100), and the exposure apparatus 4 converts the received processing pattern data 100 in a vector data format such as Gerber data. The processing data is converted into raster pattern data (drawing data) by means 41 (S101), and the resist applied on the copper foil of the substrate is exposed by exposure control means 44 (S102).

  When the resist coated on the copper foil of the substrate is exposed, development is performed by the developing device 5 to remove unnecessary resist (in the case of a positive type resist, the exposed resist is removed, in the case of a negative type resist) The resist not exposed is removed), and a resist pattern is formed on the upper surface of the copper foil (S103). Further, the copper foil on the substrate on which the resist pattern is formed is etched by the etching device 6 to form a formation pattern (S104). The formed pattern is scanned by the image recognition device 60 (S105), and the obtained image information 200 is transmitted to the exposure device 4.

  In the exposure apparatus 4, the line width comparing means 42 compares the image information 200 obtained by the image recognition apparatus 60 with the line width of the pattern line of the target formation pattern 201 stored in advance (S <b> 106). The processing pattern data 100 used for processing originally needs a formed pattern after formation in consideration of various processing conditions such as pattern line spacing (dense / dense), exposure amount, developer state, and etching solution state. In many cases, the data is corrected by CAM or the like so as to be finished to the line width of the target formation pattern 201 to be finished (for example, data that is partially thicker or thinner than the line width specified at the design stage). . Therefore, the target formation pattern 201 receives data having a line width that is a finish target from CAD (not shown), CAM 7 or the like separately from the processing pattern data 100 and stores the data as the target formation pattern 201 in advance.

  In order to compare the line width of the pattern line of the image information 200 and the line width of the pattern line of the target formation pattern 201 by the line width comparison unit 42, for example, it is sequentially set in each apparatus of an exposure apparatus, a developing apparatus, and an etching apparatus. As shown in FIG. 5, the region on the substrate to be processed is divided into a plurality of regions (D1, D2, D3, D4). Further, the target formation pattern 201 is divided into a plurality of regions so as to correspond to a plurality of regions on the divided substrate, and comparison is performed for each corresponding region (D1, D2, D3, D4).

  When the target formation pattern 201 is stored as raster data, the image information 200 (bitmap) and the target formation pattern 201 are overlapped with each other for comparison (see FIG. 6, where ● represents an overlapped portion) The circles indicate non-overlapping parts), and the non-overlapping part dots (circled parts) are counted, and the line width difference and area difference (or ratio) of the pattern lines are obtained. For example, as shown in FIG. 6, when the line width difference Δd generated in a certain area is 2 dots, correction is performed based on the difference between the 2 dots. In addition, when the image information 200 and the target formation pattern 201 are overlapped, the difference may be 2 dots or 3 dots depending on the pattern line even in the same region. Or a representative value (a frequently occurring difference) is used for correction.

  Alternatively, when the target formation pattern 201 is stored as vector data, the line width is estimated from the image information 200, and the difference from the line width (or area) of the target formation pattern 201 is obtained and compared. Is also possible.

  From the comparison result 202 obtained in this way, when the difference between the image information 200 and the target formation pattern 201 is equal to or smaller than a predetermined value (S107—YES), the same processing pattern data 100 is used as it is. However, if the difference between the image information 200 and the target formation pattern 201 is equal to or greater than a predetermined value (S107—NO), it is necessary to correct the processing pattern data 100.

  Therefore, the adjusting unit 43 uses the processing width so that the line width of the formed pattern after etching becomes the target line width (the line width of the target formed pattern) based on the comparison result 202 obtained by the line width comparing unit 42. The line width and exposure amount of the pattern line designated by the pattern data 100 are adjusted (S108).

Between the difference Δd between the target line width and the actually formed line width and the correction amount ΔW for correcting the line width of the pattern line of the processing pattern data 100 to eliminate the difference, for example, FIG. There is a relationship as shown in FIG.
ΔW = f1 (Δd) (1)
It is expressed. This relationship is obtained and stored in advance based on results obtained through experiments, results obtained by actual manufacturing, and the like, and the line width is adjusted based on this.

  In addition, due to the circulation of developer and etchant, shower pressure, transport direction, pattern line density, etc., the locality that the line width of the pattern line to be formed differs depending on the location of the substrate occurs. The same locality also occurs in the relationship between the difference Δd between the two and the correction amount ΔW for eliminating the difference. Therefore, the substrate is divided into a plurality of regions so that these localities can be absorbed, and the difference Δd between the target line width and the actually formed line width for each region and the correction amount ΔW for eliminating the difference. And the relationship that provides the most appropriate correction in the area is stored. Further, the finer the division of the region, the more the adjustment can be made in accordance with the difference depending on the place.

  The amount of correction of the line width is the comparison result 202 obtained by the line width comparison means 42 (if the relationship between the difference in line width and the amount of correction of the line width is obtained as described above, the image information 200 The difference between the line width of the pattern line and the line width of the pattern line of the target formation pattern 201) is obtained using the above relationship. For example, when the line width and difference between the image information 200 and the target formation pattern 201 are d1 in a certain area D1, the entire line width of the area D1 is narrowed by W1 using the correction amount W1 at that time. (See FIG. 7).

  As described above, all the pattern lines in the same region are subjected to the same correction (that is, in the respective regions using the above relationship stored corresponding to D1, D2, D3, and D4 shown in FIG. 4). (The same correction amount is corrected for the line width of the pattern line of the processing pattern data 100). However, as shown in FIG. 8, the difference obtained by the line width comparison means 42 is the position within D1. If the difference differs depending on the location within the same region D1, such as the difference d1 at P1 (X1, Y1) and the difference d2 at the position P2 (X2, Y2), the pattern line near the position P1 Corrects the line width of the pattern line of the processing pattern data 100 by the correction amount W1 with respect to the difference d1, and the pattern amount of the processing pattern data 100 with respect to the pattern line near the position P2 by the correction amount W2 with respect to the difference d2. You may make it correct | amend the line | wire width of a line (however, the relationship memorize | stored correspondingly in D1 has memorize | stored one typical relationship of the area | region as shown in FIG. 7). .

As described above, the adjustment of the line width of the pattern line of the formation pattern has been described with respect to the case where the line width of the pattern line of the processing pattern data 100 is directly corrected. It is also possible to adjust the line width of the pattern line of the pattern. In order to adjust the line width of the pattern line of the formation pattern by changing the exposure amount, the exposure amount is adjusted by storing how much the line width of the pattern line changes with the change of the exposure amount. . For example, a relationship as shown in FIG. 9 exists between the correction amount ΔW of the pattern line and the correction amount ΔE for correcting the exposure amount for changing the line width by this correction amount ΔW.
ΔW = f2 (ΔE) (2)
It can be expressed. This relationship is also obtained and stored in advance based on the result obtained by conducting an experiment, the result obtained by actual manufacturing, and the like, as in the above-described equation (1). In addition, since this relationship also causes locality depending on the location of the substrate, it is desirable to store it in a plurality of areas.

  In order to adjust the exposure amount and adjust the line width of the formation pattern, the comparison result 202 (line width difference d1) obtained by the line width comparison means 42 is obtained in the same manner as described above. Based on this, a correction amount W1 for correcting the line width is obtained. Further, based on the relationship of equation (2), a correction amount E1 for correcting the exposure amount is obtained from the correction amount W1 (see FIG. 9), and the exposure amount transmitted to the exposure control unit 44 is corrected with the correction amount E1.

  Similar to the case of adjusting the line width, the exposure amount is also adjusted by dividing the area on the substrate into a plurality of areas and making the target formation pattern 201 into a plurality of areas so as to correspond to the plurality of areas on the divided substrate. It is desirable to divide and compare each corresponding area. Further, the same correction may be performed on the same region all at once, or may be changed according to the position in the region (for example, P1 and P2 described above).

  As described above, when the comparison result 202 obtained by the line width comparison unit 42 is equal to or greater than a predetermined value, the exposure amount or the line width of the processing pattern data 100 is used to adjust the next substrate. The resist on the copper foil is exposed (S102).

  Unnecessary resist is removed by the developing device 5 on the substrate on which the resist is exposed, and a resist pattern is formed on the upper surface of the copper foil (S103). The copper foil on the substrate on which the resist pattern is formed is etched by the etching device 6 to form a formation pattern (S104). The substrate on which the formation pattern is formed is scanned again by the image recognition device 60 (S105), and the obtained image information 200 is transmitted to the exposure device 4. Hereinafter, as described above, from the comparison result 202 obtained by the line width comparison unit 42 (S106), when the difference between the image information 200 and the target formation pattern 201 is equal to or smaller than a predetermined value (S107-YES), The next substrate is processed using the same processing pattern data 100 with the same exposure amount without adjustment, but when the difference between the image information 200 and the target formation pattern 201 is equal to or greater than a predetermined value (S107). -NO), the exposure amount and the processing pattern data 100 are corrected again (S108), and the next substrate is processed.

  Further, the adjustment unit 43 has been described as performing the adjustment when there is a difference greater than or equal to a predetermined value. However, even if the difference is slight, the adjustment may be performed if there is a difference.

  In this way, by repeatedly adjusting the line width and the exposure amount, the pattern formed after the etching can always be finished with the same accuracy.

  Next, in the second embodiment, a case where the line width is adjusted by scanning a developed resist pattern will be described. FIG. 10 is a diagram showing an embodiment of a pattern manufacturing system 1a according to the second embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, detailed description thereof is omitted, and only different components will be described.

  The pattern manufacturing system 1a of this embodiment includes an exposure device 4a, a developing device 5a, and an etching device 6a.

  In the present embodiment, an image recognition device 50 for obtaining image information 200a obtained by scanning a resist pattern formed by developing a resist exposed to the developing device 5a is provided without providing an image recognition device in the etching device 6a. The image recognition device 50 and the exposure device 4a are connected by the network 8, and the obtained image information 200a is transmitted to the exposure device 4a.

  Further, as shown in FIG. 11, the exposure apparatus 4a has a line width of the pattern line of the image information 200a recognized by the image recognition apparatus 50 after development and a target resist pattern 203 which is a target of the resist pattern formed after development. A line width comparison means (difference information acquisition unit) 42a that compares the line widths of the pattern lines to obtain a comparison result (difference information) 202a, and a developed resist pattern is a target based on the obtained comparison result 202a. An adjustment unit 43 a that adjusts the processing pattern data 100 and the exposure amount so as to approach the resist pattern 203, and an exposure control unit 44 that performs exposure according to the processing pattern data 100 are provided.

  The image recognition device 50 is provided in the developing device 5a so as to obtain the image information 200a of the resist pattern of the resist developed with the substantially same image recognition device 60 of the above-described embodiment. .

  In addition, the target resist pattern 203 is simulated with a CAM or the like having a line width that is a finish target of the developed resist pattern, and the data is received and stored in advance as the target resist pattern 203.

  The adjustment unit 43a stores in advance the relationship between the correction amount for correcting the line width of the pattern line of the processing pattern data 100 and the comparison result 202a, and the relationship between the correction amount for correcting the exposure amount and the comparison result 202a. In addition, based on the comparison result 202a between the image information 200a obtained by the line width comparison unit 42a and the target resist pattern 203, adjustments similar to those in the above-described embodiment are performed. Further, the relationship between the correction amount for correcting the line width of the pattern line of the processing pattern data 100 and the comparison result 202a, and the relationship between the correction amount for correcting the exposure amount and the comparison result 202a are the same as those in the above-described embodiment. In addition, it is obtained in advance based on the result obtained by conducting an experiment, the result obtained by actual manufacturing, etc., and stored in advance. Based on this, the exposure amount and the line width of the pattern line of the processing pattern data 100 are stored. Make adjustments.

  By providing such a configuration, in the second embodiment, the line width of the pattern line of the image information 200a obtained by the image recognition apparatus 50 after development and the line width of the pattern line of the target resist pattern 203 are compared. Based on the result 202a, the line width and exposure amount specified in the processing pattern data 100 are adjusted as needed so that the resist pattern is finished to the line width of the target resist pattern 203 after development.

  As described above, in the second embodiment, it is possible to finish the resist pattern formed after development with the same accuracy.

  In each of the above-described embodiments, the case where the line width and the exposure amount of the pattern line to be exposed are adjusted by checking whether either the formed pattern after etching or the resist pattern after development is finished with a target accuracy is described. However, by providing an image recognition device in both the etching device and the developing device, both the comparison result between the formation pattern after etching and the target formation pattern and the comparison result between the resist pattern after development and the target resist pattern If the pattern data for processing is adjusted with reference to the process where the difference in the line width of the pattern line is large, the more appropriate adjustment can be performed. Alternatively, the processing pattern data may be adjusted in consideration of both comparison results.

  Further, in each of the embodiments described above, when comparing the line width of the pattern line of the formation pattern after etching with the line width of the pattern line of the target formation pattern, or the line width of the pattern line of the resist pattern after development When comparing the line width of the pattern line of the target resist pattern, the substrate is divided into a plurality of areas, and the correction amount and the comparison result for adjusting the line width of the pattern line designated by the processing pattern data for each area The relationship between the correction amount for adjusting the line width of the pattern line designated by the processing pattern data and the comparison result is stored as a whole, and each relationship is stored. The pattern data for processing may be adjusted for each area corresponding to the comparison result appearing in the area.

  Further, in each of the above-described embodiments, the case where the substrate is divided into a plurality of regions has been described. However, when the locality generated depending on the location does not appear greatly, the pattern line specified by the processing pattern data is displayed. As a relationship between the correction amount for adjusting the line width and the comparison result, one relationship may be stored as a whole, and the processing pattern data may be adjusted without being divided into regions.

  In each of the above-described embodiments, the object for determining the pattern error is not limited to the line width, and may be a pattern shape including the line width. That is, the exposure amount and pattern data may be corrected based on the difference between the target pattern shape and the pattern shape obtained as a result of development and etching.

  FIG. 12 is a diagram illustrating a third embodiment of the pattern manufacturing system, and a case where a circuit pattern which is an example of a formation pattern is manufactured by the pattern manufacturing system 11 will be described. When a circuit pattern is formed on a substrate, first, a copper foil as a circuit forming material is stuck on the substrate in the copper foil sticking step A, and the upper surface of the copper foil stuck in the leveling step B is machined. Surface treatment is performed by polishing or chemical polishing, and in the lamination step C, a resist (resist material) is laminated on the surface of the copper surface. Next, the pattern manufacturing system 11 of the present invention exposes the resist applied to the substrate, develops the exposed resist to form a resist pattern, and etches the copper foil on the substrate on which the resist pattern is formed. To form a formation pattern.

  The pattern manufacturing system 11 includes a direct-drawing type exposure device (exposure unit) 14 that exposes a pattern on a laminated resist material, a development unit (development unit) 15 that develops the exposed resist to form a resist pattern, An etching device (etching means) 16 is provided for forming a formation pattern by etching a copper foil on a substrate on which a resist pattern is formed.

  The developing device 15 is provided with a deterioration detecting unit 150 so that the deterioration of the developing solution can be detected. The deterioration detecting unit 150 is connected to the exposure device 14 via the network 18, and a detection result (difference information) 1200 is displayed. It is transmitted from the deterioration detection means 150 to the exposure apparatus 14.

  As the deterioration detecting means 150, a measuring device (measuring means) for measuring the resist dissolution amount is provided in the developing device 5, and a detection result 1200 indicating the deterioration state of the developer is obtained based on the measurement result of the measuring device. Specifically, an automatic analyzer or a liquid management device that measures using the PH method or neutralization titration method is used as the measuring device.

  For example, when measuring the amount of dissolved resist using the neutralization titration method, a part of the developing solution (for example, sodium carbonate aqueous solution) used in the developing device 15 is sampled and taken out to the measuring device and taken out. Hydrochloric acid is dropped into the developer to measure the change in PH value, and the resist dissolution amount can be calculated from the change in PH value. When the pH value is measured while dropping hydrochloric acid (HCl) into the sampled developer, for example, a neutralization titration curve as shown in FIG. 13 is drawn, and the dropping amount Aml at the first inflection point of the neutralization titration curve is The resist dissolution amount S is obtained from the value of the dropping amount Bml at the second inflection point.

S = k * (B-2A) / C
Where C: sampling amount of developer
k: Conversion coefficient to dissolution amount Degradation of the developer can be detected from the dissolution amount S obtained by this measurement.

  As shown in FIG. 14, the exposure apparatus 14 uses a data conversion means 141 that converts the processing pattern data 1100 input from the CAM 17 into a format suitable for processing, and a processing pattern so that the circuit pattern is finished as designed. A correction unit 145 for correcting the exposure amount of the pattern data and the exposure apparatus, and an exposure control means (including an exposure light source) 144 for performing exposure according to the processing pattern data 1100 are provided. The correction unit 145 includes an adjustment unit 143 that acquires the detection result 1200 obtained by the deterioration detection unit 150 by the difference information acquisition unit 146 and adjusts the processing pattern data 1100 and the exposure amount. Hereinafter, in the present embodiment, a case where the correction unit 145 is provided in the exposure apparatus 14 will be described. However, a correction apparatus (correction unit) including the correction unit 145 for data in another computer is connected to the exposure apparatus 14. You may do it.

  As the exposure apparatus 14, a direct drawing apparatus that directly draws on a resist using a laser or the like is used. For example, as shown in FIG. 3, the laser direct drawing apparatus 40 divides the laser beam LB emitted from the laser generator into a plurality of drawing light beams L via a beam splitter or beam separator, and the divided light beams are arranged in a line. Are drawn in the main scanning direction (Y direction) and the sub-scanning direction (X direction) on the substrate S set on the drawing table T. The light beam LL is scanned to draw with dots arranged in a line on the substrate S. Specifically, it is disclosed in Japanese Patent Application Laid-Open Nos. 7-15993 and 9-323180. Alternatively, a spatial light modulation element such as an LCD (Liquid Crystal Display Element) or DMD (Digital Micromirror Device) may be used as the direct drawing type exposure apparatus.

  In order to draw a circuit pattern on a resist coated on a copper foil of a substrate using a laser direct drawing apparatus 40 that draws dots by dividing such laser light into a plurality of drawing light beams, The pattern data 1100 converted into raster data is used as drawing data, and the exposure control means 144 performs exposure based on the drawing data. The exposure is performed based on the standard exposure amount set in the exposure apparatus, but the exposure amount can be adjusted as necessary. In order to adjust the exposure amount, the exposure amount obtained by the adjustment unit 143 can be transmitted to the exposure control unit 144 as information different from the drawing data. However, the exposure amount is expressed by multivalued pixels in the drawing data. It is also possible to convert the drawing data into multiple values corresponding to the exposure amount obtained by the adjusting means 143 and transmit the converted drawing data to the exposure control means 144. For example, one pixel (one dot) is represented by 255 gradations, 255 represents the maximum exposure amount, and the smaller the numerical value, the smaller the exposure amount. The exposure control means 144 performs exposure with an exposure amount corresponding to the gradation based on the drawing data expressed in multiple values (gradation) in this way.

  Here, the operation when the same circuit pattern is repeatedly manufactured using the pattern manufacturing system 11 will be described with reference to the flowchart of FIG.

  First, in order to manufacture a predetermined circuit pattern, the exposure apparatus 14 receives the processing pattern data 1100 from the CAM 7 (S1100), and the exposure apparatus 14 receives the processing pattern data 1100 in a vector data format such as Gerber data. The data conversion means 141 converts the processing pattern data (drawing data) in the raster data format (S1101), and the exposure control means 144 uses the raster data format processing pattern data to expose the resist (S1102).

  When the resist is exposed, development is performed by the developing device 15 to remove unnecessary resist (in the case of a positive type resist, the exposed resist is removed, and in the case of a negative type resist, the unexposed resist is removed). A resist pattern is formed on the upper surface of the copper foil (S1103). Further, the copper foil on the substrate on which the resist pattern is formed is etched by the etching device 6 to form a formation pattern (S1104).

  On the other hand, the developer used in the developing device 15 is sampled by the deterioration detecting means 150, for example, at a predetermined interval, and the resist dissolution amount is measured by the measuring device. Based on the measurement result, the degree of deterioration of the developer is detected, and the detection result 1200 is transmitted from the measurement apparatus to the exposure apparatus 14 via the network 18 as needed.

  When the same developing solution is used in the developing device 15 and development is repeated, the amount of the resist dissolved in the developing solution increases and the resist becomes difficult to be developed. Therefore, an amount of resist that should originally be developed is not developed, and the line width of the pattern line of the finished resist pattern becomes narrow. When the pattern line of the resist pattern becomes thin, the line width of the pattern line of the formation pattern formed by etching using the resist pattern also becomes thin, and does not match the line width of the pattern line of the target formation pattern that is the target. .

  Therefore, in order to finish the pattern line of the resist pattern with a desired line width, the exposure apparatus 14 receives the detection result 1200 (S1105), and the received detection result 1200, that is, the resist dissolution amount is not more than a predetermined value. In this case (S1106-YES), the next substrate may be processed using the same processing pattern data 1100 as it is, but when the resist dissolution amount is a predetermined value or more (S1106-NO), It is necessary to correct the processing pattern data 1100 for exposure.

  Therefore, the adjusting unit 143 uses the pattern specified by the processing pattern data 1100 so that the line width of the formed pattern after etching becomes a target line width (line width of the target formed pattern) based on the resist dissolution amount. The line width of the line is adjusted (S1107).

Between the correction amount ΔW for correcting the line width of the pattern line of the processing pattern data 1100 and the resist dissolution amount D so that the line width of the pattern line of the formation pattern is finished to a desired line width, for example, as shown in FIG. There is a relationship as shown,
ΔW = f1 (Sr) (3)
Sr: Expressed as resist dissolution amount. This relationship is obtained from a result obtained by performing an experiment, a result obtained by actual manufacturing, or the like, and the obtained relationship is stored in the exposure apparatus 14 in advance, and the adjustment unit 143 uses the line width based on the relationship. Make adjustments.

  Further, due to the circulation of the developing solution, the shower pressure, the transport direction, the density of the pattern lines, etc., locality such that the line width of the pattern lines of the formation pattern varies depending on the location of the substrate. The same locality occurs in the relationship between the correction amount ΔW and the resist dissolution amount D. Therefore, in order to absorb these localities, for example, an area on the substrate to be processed by being sequentially set in each of the exposure apparatus, the developing apparatus, and the etching apparatus is divided into a plurality of sections (D1, D2, D3, and D4), the relationship between the correction amount ΔW and the resist dissolution amount D is obtained for each section, and the correction amount ΔW and the resist dissolution amount D are obtained so that the most appropriate correction is obtained in each section. Remember the relationship. The finer the division of this section, the finer the adjustment can be made according to the location.

  Therefore, in the exposure apparatus 14, based on the resist dissolution amount received from the measurement apparatus 150, the adjustment unit 143 obtains an amount for correcting the line width using the above relationship. For example, when the resist dissolution amount is Sr1, adjustment is performed using the correction amount W1 at that time (see FIG. 16).

  Further, when the above relationship is stored corresponding to D1, D2, D3, and D4 shown in FIG. 17, the processing pattern data 1100 also includes a plurality of pattern data corresponding to a plurality of sections on the divided substrate. Dividing into sections, the line width of the pattern line of the processing pattern data 1100 is corrected for each section.

The case where the line width of the pattern line of the processing pattern data 1100 is corrected so that the line width of the pattern line of the formation pattern becomes a desired line width has been described above, but the exposure amount of the processing pattern data 1100 is adjusted. Thus, the line width of the pattern line of the formation pattern can be adjusted. In order to adjust the line width of the pattern line of the formation pattern by changing the exposure amount, it is memorized how much the line width of the pattern line of the formation pattern changes with the change of the exposure amount. Make adjustments. For example, there is a relationship as shown in FIG. 18 between the correction amount ΔW of the pattern line and the correction amount ΔE for correcting the exposure amount for changing the line width by this correction amount ΔW.
ΔW = f2 (ΔE) (4)
It can be expressed. This relationship is also obtained based on the result obtained by conducting an experiment or the result obtained by actually manufacturing, as in the above-described equation (1), and the obtained relationship is stored in the exposure apparatus 14 in advance. deep. In addition, since this relationship also has locality depending on the location of the substrate, it is desirable to store it in a plurality of sections.

  In order to adjust the exposure amount and adjust the line width of the formed pattern, the adjustment unit 143 first corrects the line width based on the detection result 1200 (resist dissolution amount) and the equation (3), as described above. A correction amount W1 to be obtained is obtained. Further, based on the relationship of the expression (4), a correction amount E1 for correcting the exposure amount is obtained from the correction amount W1 (see FIG. 18), and the exposure amount transmitted to the exposure control unit 144 is corrected with the correction amount E1.

  Similar to the case of adjusting the line width, the exposure amount is adjusted by dividing the section on the substrate into a plurality of sections and dividing the processing pattern data 1100 into a plurality of sections so as to correspond to the plurality of sections on the divided substrate. It is desirable to divide into two and correct and adjust each corresponding section.

  As described above, when the resist dissolution amount measured by the measuring apparatus is equal to or larger than a predetermined value, the exposure amount or the line width of the processing pattern data 1100 is adjusted, and the substrate to be processed next is used. The resist is exposed (S1102).

  Unnecessary resist is removed by the developing device 15 on the substrate on which the resist is exposed, and a resist pattern is formed on the upper surface of the copper foil (S1103). The copper foil on the substrate on which the resist pattern is formed is etched by the etching apparatus 16 to form a formation pattern (S1104).

  Hereinafter, as described above, when the resist dissolution amount measured by the measurement apparatus 150 is equal to or smaller than a predetermined value (S1106-YES), the same processing pattern data 1100 is used with the same exposure amount without adjustment. The next substrate is processed. If the resist dissolution amount exceeds a predetermined value (S1106-NO), the processing pattern data 1100 is corrected again (S1107), and the next substrate is processed.

  The adjustment unit 143 has been described as performing the adjustment when there is a difference greater than or equal to a predetermined value. However, even if the difference is slight, the adjustment may be performed if there is a difference.

  Further, although the case where the resist dissolution amount is measured to correct the pattern line of the processing pattern data has been described, the PH value of the developer sampled by the measuring device may be measured and corrected. In this case, a relationship between the PH value and the correction amount for correcting the line width of the pattern line of the processing pattern data is obtained and stored in the exposure apparatus in advance, and correction is performed based on this relationship.

  As described in detail above, the amount of dissolved resist and the PH value dissolved in the developer are measured to detect the deterioration of the developer, and according to the amount of dissolved resist so that the formation pattern has a desired line width. Thus, it is possible to adjust the exposure amount and the line width of the pattern data for processing.

  Next, in the fourth embodiment, a case will be described in which the deterioration of the developer is detected based on the processing area of the developed resist. FIG. 19 is a diagram illustrating an embodiment of a pattern manufacturing system 11a according to the fourth embodiment. The same components as those in the third embodiment are denoted by the same reference numerals, detailed description thereof is omitted, and only different components will be described.

  The pattern manufacturing system 11a of this embodiment includes an exposure device 14a, a developing device 15a, and an etching device 16.

  In the present embodiment, the deterioration detector 42 is not provided in the developing device 15a, but the deterioration detector 42 is provided in the exposure device 14a. Further, as shown in FIG. 21, the exposure apparatus 14a includes a data conversion unit 141 that converts the processing pattern data 1100 input from the CAM 17 into a format suitable for processing, and a deterioration detection unit (difference information acquisition unit) 142. Is provided with an adjusting unit 143a for adjusting the processing pattern data 1100 based on the detection result (difference information) 1200a obtained in the above, and an exposure control unit 144 for performing exposure according to the processing pattern data 1100.

  The deterioration detection unit 142 accumulates the exposure area where the resist is exposed by the exposure control unit 144, obtains the processing area of the developed resist from the accumulated exposure area, and obtains the resist dissolution amount based on the processing area. In the case of a positive type resist, the exposed resist dissolves in the developer, and in the case of a negative type resist, the unexposed resist dissolves in the developer. In the case of a negative resist, the processing area is obtained by subtracting the exposure area from the area where the resist is coated on the substrate.

For example, there is a relationship as shown in FIG. 21 between the resist melting amount Sr melted in the developer of the developing device 15a and the processing area Sd of the developed resist.
Sr = f3 (Sd) (5)
It is expressed. Therefore, the relationship between the processing area of the developed resist and the amount of melted resist is obtained from the results obtained through experiments, the results obtained from actual manufacturing, and the like, and the obtained relationships are stored in the exposure device 14a in advance. Keep it.

  The adjustment unit 143a obtains the resist melting amount Sr1 from the resist processing area Sd1 based on the relationship of the equation (5), and further corrects the pattern line from the resist melting amount Sr1 based on the relationship of the equation (3). The amount ΔW is obtained, and the line width of the pattern line of the processing pattern data 1100 is corrected.

  Similarly to the above-described embodiment, the substrate is divided into a plurality of sections, and the relationship between the correction amount for correcting the line width of the pattern line and the resist dissolution amount is obtained for each section, and the most appropriate for each section. It is desirable that correction can be obtained.

  Further, similarly to the above-described embodiment, the exposure device 14a stores the extent to which the line width of the pattern line of the formation pattern changes with the exposure amount, and transmits the exposure pattern to the exposure control unit 144. The line width at which the pattern line of the formation pattern is finished may be adjusted by correcting the amount. Since this relationship also causes locality depending on the device, it is desirable that the relationship be stored in a plurality of sections.

  Further, it is desirable that the developing device and the exposure device are connected via a network, and when the developing solution is exchanged, the exchange of the developing solution is received from the exposure device and the accumulated processing area of the resist is cleared. Alternatively, if necessary, the processing area of the resist developed manually may be cleared from the operation panel of the exposure apparatus.

  As described above in detail, the deterioration of the developing solution is detected from the processing area of the resist to be developed, and the exposure amount or the amount corresponding to the processing area of the resist to be developed is adjusted so that the resist pattern finished after development has a desired line width. By adjusting the line width of the pattern data for processing, it is possible to make the formation pattern finally formed after etching always uniform.

  Next, in the fifth embodiment, a case where the processing area of the developed resist is obtained by a developing device and the deterioration of the developing solution is detected will be described. FIG. 22 is a diagram illustrating an embodiment of a pattern manufacturing system 11b according to the fifth embodiment. The same components as those of the above-described embodiment are denoted by the same reference numerals, detailed description thereof is omitted, and only different components will be described.

  The pattern manufacturing system 11b of this embodiment includes an exposure device 14b, a developing device 15b, and an etching device 16.

  Further, the developing device 15b of the present embodiment is provided with a deterioration detecting means 151 for detecting the deterioration of the developing solution. The deterioration detection means 151 is connected to the exposure apparatus 14b via the network 18, and the detection result 1200b is transmitted from the deterioration detection means 151 to the exposure apparatus 14b.

  For example, the deterioration detecting unit 151 is configured to count the number of substrates on which the developing device 15b is developed, and obtains the processing area of the developed resist from the processing area for developing the resist per sheet and the number of substrates. The detection result (difference information) is assumed to be 1200b.

  Further, as shown in FIG. 23, the exposure apparatus 14b uses the data conversion unit 141 that converts the processing pattern data 1100 input from the CAM 17 into a format suitable for processing, and the processing area obtained by the deterioration detection unit 151. An adjustment unit 143a that adjusts the processing pattern data 1100 acquired by the difference information acquisition unit 146a and an exposure control unit 144 that performs exposure according to the processing pattern data 1100 are provided.

  Therefore, as in the above-described embodiment, the relationship between the processed area of the developed resist and the amount of dissolved resist is obtained and obtained from the results obtained through experiments or the results obtained from actual manufacturing. The relationship is previously stored in the exposure device 14b. Similar to the above-described embodiment, the adjusting unit 143a obtains the dissolved amount of the resist from the relationship and the processing area of the developed resist received from the deterioration detecting unit 151, and further processes pattern data from the dissolved amount of the resist. A correction amount for correcting the line width of the pattern line 1100 is obtained, and the line width of the pattern line of the processing pattern data 1100 is adjusted.

  Similarly to the above-described embodiment, the substrate is divided into a plurality of sections, and the relationship between the correction amount for correcting the line width of the pattern line and the resist dissolution amount is obtained for each section, and the most appropriate for each section. It is desirable that correction can be obtained.

  Further, as in the above-described embodiment, how much the line width of the pattern line changes with the exposure amount is stored in the exposure device 14b, and the exposure amount transmitted to the exposure control unit 144 is determined. Correction may be made to adjust the finished line width of the pattern line of the formed pattern. Since this relationship also causes locality depending on the apparatus, it is desirable to store it in a plurality of sections.

  Similarly to the above-described embodiment, when the developing device and the exposure device are connected by a network and the developer is replaced, the replacement of the developer is received from the exposure device to clear the resist processing area. What is configured is desirable. Alternatively, if necessary, the processing area of the resist developed manually may be cleared from the operation panel of the exposure apparatus.

  As described above in detail, the line width of the processing pattern data is detected in accordance with the processing area of the resist to be developed so that the deterioration of the developer is detected from the processing area of the resist to be developed and the formation pattern has a desired line width. It is possible to always adjust the exposure amount so that the final pattern formed after etching is always the same.

  Next, in the sixth embodiment, a case will be described in which the deterioration of the etching solution is detected and adjustment is performed so that the pattern line of the formed pattern after etching has a constant line width. FIG. 24 is a diagram illustrating an embodiment of a pattern manufacturing system 11c according to the sixth embodiment. The same components as those of the above-described embodiment are denoted by the same reference numerals, detailed description thereof is omitted, and only different components will be described.

  The pattern manufacturing system 11c of this embodiment includes an exposure device 14c, a developing device 15a, and an etching device 16c.

  In the present embodiment, the etching apparatus 16c is provided with a deterioration detecting means 160 that detects the deterioration of the etching solution. The deterioration detection unit 160 is connected to the exposure apparatus 14 c via the network 18, and the detection result 1200 c is transmitted from the deterioration detection unit 160 to the exposure apparatus 14.

  As the deterioration detecting means 160, for example, a measuring device (measuring means) for measuring the PH value of the etching solution is provided in the etching device 16c, and the PH value measured by sampling the etching solution is obtained as the detection result 1200c.

  In addition, as shown in FIG. 25, the exposure apparatus 14c includes a data conversion unit 141 that converts processing pattern data 1100 input from the CAM 17 into a format suitable for processing, and an etching solution obtained by the deterioration detection unit 160. An adjustment unit 143c that acquires a PH value (difference information) from the difference information acquisition unit 146c and adjusts the processing pattern data 1100, and an exposure control unit 144 that performs exposure according to the processing pattern data 1100 are provided.

  Therefore, in the present embodiment, the relationship between the PH value of the etching solution and the correction amount for correcting the line width of the pattern line of the processing pattern data 1100 is obtained as a result of an experiment or actually manufactured. The obtained relationship is obtained and the obtained relationship is stored in advance in the exposure device 14c. The adjusting unit 143c adjusts the line width of the pattern line designated by the processing pattern data 1100 based on this relationship and the PH value of the etching solution received from the deterioration detecting unit 160 of the etching apparatus 16c.

  Also, due to the circulation of the etchant, shower pressure, transport direction, pattern line density, etc., the locality that the line width of the pattern line of the formation pattern after etching differs depending on the location of the substrate occurs, and the correction amount The same locality also occurs in the relationship between the etching solution and the PH value of the etching solution. Therefore, similarly to the above-described embodiment, the substrate is divided into a plurality of sections, and the relationship between the correction amount and the PH value of the etching solution is obtained for each section so that the most appropriate correction can be obtained in each section. Is desirable.

  Further, as in the above-described embodiment, how much the line width of the pattern line of the formation pattern changes with the exposure amount is stored in the exposure device 14c and transmitted to the exposure control unit 144. The finished line width of the resist pattern pattern line may be adjusted by correcting the amount. Since this relationship also causes locality depending on the apparatus, it is desirable to store it in a plurality of sections.

  As described above in detail, the deterioration of the etching solution is detected from the PH value of the etching solution, and the line of the pattern data for processing according to the PH value of the etching solution so that the finished pattern has a desired line width after etching. By adjusting the width and exposure amount, it is possible to always obtain the same finish pattern.

  In addition, either the deterioration of the developer or the deterioration of the etching solution was detected, and the line width or the exposure amount of the pattern line designated by the processing pattern data was adjusted. Correction for adjusting both the pattern line width and exposure amount of the processing pattern data to detect both degradations and finish the pattern pattern line width to the target pattern width from both detection results. The amount may be obtained and stored from the result obtained by conducting an experiment, the result obtained by actual manufacturing, or the like.

  Also, the case where the area on the substrate is divided into a plurality of sections for comparison has been described, but if the locality does not appear greatly depending on the location, the correction amount for adjusting the line width of the pattern line specified by the processing pattern data As a whole, the relationship between the comparison result and the comparison result may be stored, and the processing pattern data may be adjusted without being divided into sections.

  In the above-described embodiment, the image information obtained by scanning the formation pattern formed by etching the copper foil by providing the etching device 6 with an image recognition device such as an optical inspection machine (AOI) using a CCD camera. If it is configured so that the finish of the formation pattern can be confirmed, the finish accuracy can be confirmed visually.

  As described above in detail, the exposure amount and the processing pattern data can be adjusted based on the state of the developing solution and the state of the etching solution that are factors that affect the line width, that is, the pattern shape.

  Further, based on the number of times of development and etching, the states of the developer and the etching solution can be detected or predicted, respectively. The exposure amount and processing pattern data may be adjusted based on the number of developments and etchings and the substrate size.

  Further, an error occurring in the pattern shape after development or etching may be predicted based on the number of exposures, and the exposure amount and processing pattern data may be adjusted based on the error. In this case, the state of the developer and the etching solution can be predicted from the number of exposures.

  Further, the adjustment of the exposure amount and the processing pattern data based on the number of exposures and the adjustment based on the pattern image information may be performed alternately. For example, the adjustment based on the image information may be performed every time the adjustment based on the number of exposures is performed a predetermined number of times. In this case, a means for switching between adjustment based on the number of exposures and adjustment based on the image information may be provided in the exposure apparatus.

  Further, in each of the embodiments described above, the case of etching the copper foil has been described, but the object of etching is not limited to the copper foil, various metals such as aluminum for forming a reflective film of a liquid crystal display device, It may be a metal oxide such as ITO or a semiconductor.

  Further, in the present embodiment, the drawing data and the exposure amount are corrected based on the formation error of the resist pattern and the formation pattern and the factor thereof, but the cause of this error is the elapsed time from the start of processing, It may be an elapsed time after the developer or etching solution is set. Further, the error factor may be information representing the deterioration state of the liquid such as the color or viscosity of the developer or the etching liquid.

  In addition, the correction of the exposure amount of the drawing data may be performed every time any one of exposure, development, and etching on the substrate is performed a predetermined number of times.

  Even when a method that does not require etching is employed when manufacturing the substrate, the drawing data and the exposure amount can be corrected based on the error of the resist pattern after development and the factors thereof.

  Further, in each of the embodiments described above, the circuit pattern has been described. However, in a color filter manufacturing apparatus that manufactures a color filter by applying a colored photosensitive material or a resist material to a glass substrate, it is also formed after development or etching. It is possible to make adjustments so as to eliminate variations in the formed pattern. Specifically, it is possible to cope with the manufacture of color filters such as plasma displays, liquid crystal displays, and organic EL displays.

  Furthermore, the same adjustment can be made in a semiconductor manufacturing apparatus for manufacturing a semiconductor by applying a resist to a silicon wafer.

  As described above in detail, it is possible to maintain a more accurate finish by adjusting the processing pattern data as needed in accordance with the deterioration of the etching solution or the deterioration of the developer.

The figure for demonstrating the structure of the pattern manufacturing system of 1st Embodiment Block diagram of the exposure apparatus of the first embodiment Laser direct drawing system Flow chart showing operation of pattern manufacturing system Diagram for explaining division of area on substrate Diagram to explain line width comparison A diagram showing the relationship between the difference between the target line width and the actually formed line width and the amount of correction The figure for explaining the method of comparing the line width A diagram showing the relationship between the line width correction amount and the corrected exposure amount The figure for demonstrating the structure of the pattern manufacturing system of 2nd Embodiment. The block diagram of the exposure apparatus of 2nd Embodiment The figure for demonstrating the structure of the pattern manufacturing system of 3rd Embodiment. Example of neutralization titration curve The block diagram of the exposure apparatus of 3rd Embodiment Flow chart for explaining the operation of the pattern manufacturing system A diagram showing the relationship between the resist dissolution amount and the pattern line correction amount of the processing pattern data Diagram for explaining division of division A diagram showing the relationship between the line width correction amount and the exposure correction amount The figure for demonstrating the structure of the pattern manufacturing system of 4th Embodiment Block diagram of the fourth embodiment Diagram showing the relationship between the area of the developed resist and the amount of dissolved resist The figure for demonstrating the structure of the pattern manufacturing system of 5th Embodiment The block diagram of the exposure apparatus of 5th Embodiment The figure for demonstrating the structure of the pattern manufacturing system of 6th Embodiment The block diagram of the exposure apparatus of 6th Embodiment

Explanation of symbols

A Copper foil sticking process B Surface-conditioning process C Lamination process 1, 1a Pattern manufacturing system 4, 4a Exposure apparatus 5, 5a Development apparatus 6, 6a Etching apparatus 7 CAM
8 Network 11, 11a Pattern manufacturing system 14, 14a, 14b, 14c Exposure device 15, 15a, 15b Development device 16, 16c Etching device 17 CAM
18 Network 41 Data conversion means 42, 42a Line width comparison means 43, 43a Adjustment means 44 Exposure control means 45 Correction unit 50, 60 Image recognition device 140 Laser direct drawing device 141 Data conversion means 143, 143a, 143c Adjustment means 144 Exposure control Means 145 Correction unit 142, 150, 151, 160 Degradation detection means 100 Processing pattern data 200, 200a Image information 201 Target formation pattern 202, 202a Comparison result 203 Target resist pattern 1200, 1200a, 1200b, 1200c Detection result 1100 Processing pattern data

Claims (38)

Based on the processing pattern data for forming the target formation pattern, an exposure unit that directly draws and exposes the resist on the etching target material attached to the substrate with a predetermined exposure amount,
A developing unit for developing the exposed resist to form a resist pattern;
An etching portion for forming a formation pattern by etching the material to be etched;
Based on one or a combination of a difference between the shape of the resist pattern and the shape of the target resist pattern, a difference between the shape of the formation pattern and the shape of the target formation pattern, and a component that causes the difference And a correction unit for correcting the processing pattern data and / or the predetermined exposure amount. The correction unit scans the formed pattern after etching to obtain image information; and
A line width comparing means for comparing the line width of the pattern line of the image information and the line width of the pattern line of the target formation pattern;
And adjusting means for adjusting at least one of the predetermined exposure amount and the line width of the pattern line designated by the processing pattern data based on the comparison result by the line width comparing means. Item 4. The pattern manufacturing system according to Item 1. The correction unit scans the resist pattern after development to obtain image information; and
A line width comparing means for comparing the line width of the pattern line of the image information and the line width of the pattern line of the target resist pattern;
And adjusting means for adjusting at least one of the predetermined exposure amount and the line width of the pattern line designated by the processing pattern data based on the comparison result by the line width comparing means. Item 4. The pattern manufacturing system according to Item 1.   The adjustment unit stores in advance a relationship between a correction amount for correcting the line width of the pattern line designated by the processing pattern data and a comparison result, and the comparison obtained by the line width comparison unit based on the relationship 4. The pattern manufacturing system according to claim 2, wherein a correction amount corresponding to the result is obtained, and the line width of the pattern line designated by the processing pattern data is adjusted using the correction amount. . The line width comparison means obtains a comparison result for each section obtained by dividing the target formation pattern into a plurality of sections,
The adjustment means stores in advance the relationship between the correction amount for adjusting the line width of the pattern line designated by the processing pattern data and the comparison result for each section, and based on the relationship, the line width comparison means A correction amount for each division corresponding to the obtained comparison result for each division is obtained, and the line width of the pattern line specified by the processing pattern data is adjusted for each division using the correction amount. The pattern manufacturing system according to claim 2, wherein the system is a pattern manufacturing system.   The adjustment unit stores in advance a relationship between a correction amount for correcting the predetermined exposure amount and a comparison result, and obtains a correction amount corresponding to the comparison result obtained by the line width comparison unit based on the relationship, 4. The pattern manufacturing system according to claim 2, wherein the predetermined exposure amount is adjusted using the correction amount. A deterioration detecting means for detecting deterioration of the developer used in the developing section;
And adjusting means for adjusting at least one of the predetermined exposure amount and a line width of a pattern line designated by the processing pattern data based on a detection result by the deterioration detecting means. The pattern manufacturing system according to 1.   The deterioration detecting means has a measuring means for measuring the amount of dissolved resist dissolved in the developer used in the developing section, and detects deterioration of the developer based on the measurement result of the measuring means. The pattern manufacturing system according to claim 7.   8. The pattern manufacturing system according to claim 7, wherein the deterioration detecting means detects deterioration of the developing solution based on a processing area of a substrate developed by the developing unit. The deterioration detection unit includes a measurement unit that measures a PH value of a developer used in the developing unit, and detects deterioration of the developer based on a measurement result of the measurement unit. Item 8. The pattern manufacturing system according to Item 7 .   The adjustment unit stores in advance a relationship between the deterioration of the developer used in the developing unit and the correction amount for correcting the line width of the pattern line, and according to the detection result detected by the deterioration detection unit based on the relationship. 11. The correction amount corresponding to the deterioration is obtained, and the line width of the pattern line specified by the processing pattern data is adjusted using the correction amount. Pattern manufacturing system.   The adjustment unit stores in advance the relationship between the deterioration of the developer used in the developing unit and the correction amount for correcting the line width of the pattern line for each of the sections into which the substrate is divided into a plurality of sections, and the relationship The correction amount for each of the sections corresponding to the deterioration corresponding to the detection result detected by the deterioration detection means is obtained based on the correction amount, and the line width of the pattern line specified by the processing pattern data is calculated using the correction amount. The pattern manufacturing system according to claim 7, wherein adjustment is performed for each section.   The adjustment unit stores in advance a relationship between deterioration of the developer used in the developing unit and a correction amount for correcting the predetermined exposure amount, and according to a detection result detected by the deterioration detection unit based on the relationship. The pattern manufacturing system according to claim 7, wherein a correction amount corresponding to the deterioration is obtained, and the predetermined exposure amount is adjusted using the correction amount. The correction unit detects deterioration of an etching solution used in the etching unit;
And adjusting means for adjusting at least one of the predetermined exposure amount and a line width of a pattern line designated by the processing pattern data based on a detection result by the deterioration detecting means. The pattern manufacturing system according to 1.   The deterioration detecting means includes a measuring means for measuring a PH value of an etching solution used in the etching unit, and detects deterioration of the etching solution based on a measurement result of the measuring means. Item 15. The pattern manufacturing system according to Item 14.   The adjustment unit stores in advance a relationship between the deterioration of the etching solution used in the etching unit and the correction amount for correcting the line width of the pattern line, and according to the detection result detected by the deterioration detection unit based on the relationship 16. The pattern manufacturing according to claim 14, wherein a correction amount corresponding to the deterioration is obtained, and a line width of a pattern line designated by the processing pattern data is adjusted using the correction amount. system.   The adjusting means stores in advance the relationship between the deterioration of the etching solution used in the etching unit and the correction amount for correcting the line width of the pattern line for each of the divisions into which the substrate is divided into a plurality of divisions. Based on the detection result detected by the deterioration detection means, a correction amount for each of the sections corresponding to the deterioration is obtained, and using the correction amount, the line width of the pattern line designated by the pattern data for processing is determined. 16. The pattern manufacturing system according to claim 14, wherein the pattern manufacturing system is adjusted for each section.   The adjustment unit stores in advance a relationship between the deterioration of the etching solution used in the etching unit and a correction amount for correcting the predetermined exposure amount, and according to a detection result detected by the deterioration detection unit based on the relationship. 16. The pattern manufacturing system according to claim 14, wherein a correction amount corresponding to the deterioration is obtained, and the predetermined exposure amount is adjusted using the correction amount. Based on the pattern data for processing for forming a target formation pattern through development and etching, an exposure unit that directly draws and exposes the resist on the etching target material attached to the substrate with a predetermined exposure amount,
Difference between the shape of the resist pattern after development and the shape of the target resist pattern, the difference between the shape of the formation pattern after etching and the shape of the target formation pattern, and the difference including at least one of the components that cause the difference A difference information acquisition unit for acquiring information;
An exposure apparatus comprising: a correction unit that corrects the processing pattern data and / or the predetermined exposure amount based on the difference information.   The difference information acquisition unit acquires the difference information by comparing the image information of the resist pattern and the shape of the target resist pattern and / or comparing the image information of the formation pattern and the shape of the target formation pattern. The exposure apparatus according to claim 19, wherein   21. The exposure apparatus according to claim 20, wherein the difference information acquisition unit includes a unit that acquires the image information.   The exposure apparatus according to claim 19, wherein the difference information acquisition unit acquires the difference information based on a state of the developing solution and / or the etching solution.   The exposure apparatus according to claim 22, wherein the difference information acquisition unit includes a unit that detects a state of the developer and / or the etching solution.   23. The unit according to claim 22, wherein the difference information acquisition unit includes a unit that detects the number of times of development using the same developer and / or the number of times of etching using the same etchant. Exposure device.   The difference information acquisition unit acquires the difference information based on the number of times of development using the same developer and / or the number of times of etching using the same etchant. Item 20. The exposure apparatus according to Item 19.   The difference information acquisition unit detects based on the number of times of development using the same developer and / or the number of times of etching using the same etchant and the size of the substrate. An exposure apparatus according to claim 19.   The number of times that the difference information acquisition unit performs development using the same developer and / or the number of times that etching is performed using the same etchant, and the area on which the development and / or etching is performed on the substrate surface 20. The exposure apparatus according to claim 19, wherein detection is performed based on the above.   The difference information acquisition unit includes a unit for obtaining the number of times of development using the developer and / or the number of times of etching using the same etchant based on the number of exposures. 28. The exposure apparatus according to claim 25-27.   The exposure apparatus according to claim 19, wherein the difference information acquisition unit acquires the difference information based on the number of times of exposure. The difference information acquisition unit acquires the difference information by comparing the image information of the resist pattern and the shape of the target resist pattern and / or comparing the image information of the formation pattern and the shape of the target formation pattern. 1 acquisition unit,
A second acquisition unit that acquires the difference information based on the number of exposures;
The exposure apparatus according to claim 19, further comprising a switching unit that switches between the first acquisition unit and the second acquisition unit.   The exposure according to claim 30, wherein the switching unit switches the acquisition of the difference information by the first acquisition unit and the acquisition of the difference information by the second acquisition unit a predetermined number of times. apparatus.   20. The exposure apparatus according to claim 19, wherein the correction unit performs the correction for each divided region divided along the substrate surface.   The exposure apparatus according to claim 19, wherein the difference information acquisition unit acquires the difference information for a part of the substrate surface. Based on processing pattern data for forming a target formation pattern through development and etching, a method of performing direct drawing exposure with a predetermined exposure amount on a resist on an etching target material attached to a substrate,
Obtain difference information including at least one of a difference between the shape of the resist pattern and the shape of the target resist pattern, a difference between the shape of the formation pattern and the shape of the target formation pattern, and a component that causes the difference. And
An exposure method comprising correcting the pattern data for processing and / or the predetermined exposure amount based on the difference information.   35. The difference information is obtained by comparing the image information of the resist pattern and the shape of the target resist pattern and / or comparing the image information of the formation pattern and the shape of the target formation pattern. The exposure method as described.   35. The exposure method according to claim 34, wherein the difference information is acquired based on a state of the developing solution and / or the etching solution.   35. The exposure method according to claim 34, wherein the difference information is acquired based on the number of times of development using the same developer and / or the number of times of etching using the same etchant.   35. The exposure method according to claim 34, wherein the difference information is acquired based on the number of times of exposure.

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