JP2005091477A - Liquid crystal display and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display wherein manufacturing costs are reduced, and elongation of a manufacturing period is avoided, and also to provide its manufacturing method. <P>SOLUTION: In the liquid crystal display, a transmission electrode 3 is formed on a glass substrate 1. A base electrode 20 overlaps an end part 44a which is a part of the transmission electrode 3 on the glass substrate 1. A reflection electrode 4 is formed so as to come in contact with an upper part of the base electrode 20. The reflection electrode 4 has a planar shape substantially equal to the planar shape of the base electrode 20. A terminal electrode 5 is formed on the glass substrate 1 and constructed in the same layer as the transmission electrode 3. A base wiring 41 overlaps part (an end part 44b) of the terminal electrode 5 on the glass substrate 1 and is constructed in the same layer as the base electrode 20. An upper layer wiring 42 is formed on the base wiring 41. The upper layer wiring 20 is constructed in the same layer as the reflection electrode 4. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a liquid crystal display device and a manufacturing method thereof, and more specifically to a transflective liquid crystal display device including a reflective electrode and a transmissive electrode and a manufacturing method thereof.

  Conventionally, a transflective liquid crystal display device including a reflective electrode and a transmissive electrode is known (see, for example, Patent Document 1).

In FIG. 2 of Patent Document 1, a plurality of thin film field effect transistors (TFTs) formed on a glass substrate, an interlayer insulating film formed on the TFT, and each formed on the interlayer insulating film and on the TFT A transflective liquid crystal display device including a plurality of connected pixel electrodes is disclosed. The pixel electrode has a transmissive electrode and a reflective electrode.
JP 2002-303872 A

  In the transflective liquid crystal display device as described above, since the transmissive electrode and the reflective electrode are formed, the number of manufacturing steps such as photolithography is increased as compared with a normal liquid crystal display device. For this reason, the manufacturing cost of the liquid crystal display device was to increase. Further, the high-precision exposure apparatus necessary for the exposure process in the photolithography process described above is a very expensive facility, and the required number of these apparatuses increases as the photolithography process increases. Therefore, the capital investment increases, resulting in an increase in the manufacturing cost of the liquid crystal display device. Further, the amount of the resist developer or resist stripping solution used in the photolithography process described above increases as the photolithography process increases. An increase in the amount of these materials used also increases the manufacturing cost of the liquid crystal display device. In addition, an increase in the number of processes leads to an increase in the manufacturing period, which may cause manufacturing disadvantages such as a delay in delivery and a delay in trouble feedback.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a liquid crystal display device capable of reducing the manufacturing cost and avoiding the prolongation of the manufacturing period and a manufacturing method thereof Is to provide.

  The liquid crystal display device according to the present invention includes a substrate, a transmissive electrode, a base conductor film, a reflective electrode, a terminal electrode, a base wiring, and an upper layer wiring. The transmissive electrode is formed on the substrate. The underlying conductor film overlaps part of the transmissive electrode on the substrate. The reflective electrode is formed in contact with the underlying conductor film. The reflective electrode has substantially the same planar shape as that of the underlying conductor film. The terminal electrode is formed on the substrate and is composed of the same layer as the transmissive electrode. The base wiring overlaps with part of the terminal electrode on the substrate and is formed of the same layer as the base conductor film. The upper layer wiring is formed on the base wiring and is configured by the same layer as the reflective electrode.

  According to the present invention, since the number of manufacturing steps can be reduced, it is possible to provide a liquid crystal display device and a manufacturing method thereof that can reduce the manufacturing cost and avoid an increase in the manufacturing period.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated.

(Embodiment 1)
FIG. 1 is a schematic diagram showing Embodiment 1 of a liquid crystal display device according to the present invention. A first embodiment of a liquid crystal display device according to the present invention will be described with reference to FIG.

  As shown in FIG. 1, the liquid crystal display device is a transflective liquid crystal display device and includes a display pixel region and a terminal region. On the glass substrate 1 extending from the display pixel region to the terminal region, a thin film field effect transistor 2, a storage capacitor 11, and a transmissive electrode 3 and a reflective electrode 4 positioned above the thin film field effect transistor 2 are formed in the display pixel region. Has been. In the terminal region, a terminal electrode 5 for mounting connection is formed on the glass substrate 1. The terminal electrode 5 is for supplying a power supply current and a signal to the thin film field effect transistor 2 and the like from the outside.

  First, the structure in the display pixel region of the liquid crystal display device will be described. A base film 6 is formed on the glass substrate 1 in the display pixel region of the liquid crystal display device. The base film 6 is composed of a silicon nitride film 51 formed on the surface of the glass substrate 1 and a silicon oxide film 52 formed on the silicon nitride film 51. On this base film 6, the source / drain regions 7a, 7b of the thin film field effect transistor 2, the channel region 8 located between the source / drain regions 7a, 7b, and the lower electrode 9 constituting the storage capacitor 11 are formed. Is formed. The source / drain regions 7a and 7b, the channel region 8 and the lower electrode 9 are formed of a polysilicon film as a semiconductor film of the same layer.

  An insulating film 10 is formed so as to extend from the source / drain regions 7 a and 7 b, the channel region 8 and the lower electrode 9 to the base film 6. The insulating film 10 includes a portion located on the channel region 8 and acting as a gate insulating film of the thin film field effect transistor 2, and a portion located on the lower electrode 9 and acting as a dielectric film of the storage capacitor 11.

  In the region located on the channel region 8, the gate electrode 12 is formed on the insulating film 10. In the region located on the lower electrode 9, the common electrode 13 is formed on the insulating film 10 that acts as a dielectric film. The gate electrode 12 and the common electrode 13 are composed of a conductor film in the same layer. A protective film 14 is formed so as to extend from above the gate electrode 12 and the common electrode 13 to the insulating film 10. Contact holes 15a to 15c are formed by removing portions of the protective film 14 and the insulating film 10 by etching. Specifically, a contact hole 15 a is formed on the lower electrode 9 at a portion spaced from the common electrode 13. A contact hole 15b is formed on the source / drain region 7a. A contact hole 15c is formed on the source / drain region 7b.

  Electrodes 16a to 16c are formed so as to extend from the inside of contact holes 15a to 15c to the upper surface of protective film 14. Specifically, the electrode 16a includes a molybdenum (Mo) film 53 extending from the inside of the contact hole 15a to the upper surface of the protective film 14, an aluminum (Al) alloy film 54 formed on the Mo film 53, And a molybdenum (Mo) film 55 formed on the aluminum-based alloy film 54. The electrodes 16b and 16c also have the same structure as the electrode 16a.

  An insulating film 17 is formed so as to extend from above the electrodes 16 a to 16 c to the protective film 14. An organic insulating film 18 is formed on the insulating film 17. Contact holes 19a and 19b are formed by partially removing organic insulating film 18 and insulating film 17 by etching. The contact hole 19a is formed so that a part of the upper surface of the electrode 16c is exposed at the bottom thereof.

  A transmissive electrode 3 made of an ITO film is formed so as to extend from the inside of the contact hole 19 b to the upper surface of the organic insulating film 18. The transmissive electrode 3 is an electrode for forming an electric field for driving the liquid crystal 27 described later, and is transparent or transparent so that light from the back surface of the glass substrate 1 (light of the backlight) can be transmitted. The electrode is made of a translucent material. As the material of the transmissive electrode 3, other materials can be used as long as they are conductor films capable of transmitting light even if they are other than the ITO film. A base electrode 20 made of a chromium (Cr) film is formed so as to extend from the inside of the contact hole 19 a to the upper surface of the organic insulating film 18. The base electrode 20 is electrically connected to the electrode 16c at the bottom of the contact hole 19a. A reflective electrode 4 made of an aluminum alloy film is formed on the base electrode 20. The reflection electrode 4 has a function as a reflection plate for reflecting light from the counter glass substrate 25 side and a function as an electrode used to form an electric field for driving the liquid crystal 27 described later. As a material of the reflective electrode 4, a material other than chromium may be used as long as it is a conductor exhibiting a certain degree of light reflectivity.

  On the upper surface of the organic insulating film 18, the end portion 44 a of the transmissive electrode 3 is disposed so as to be embedded under the end portion 37 of the base electrode 20. That is, the end portion 37 of the base electrode 20 and the end portion 39 of the reflective electrode 4 are in a state of riding on the end portion 44 a of the transmissive electrode 3. In this portion, the transmissive electrode 3 is electrically connected to the base electrode 20. In the display pixel region of the glass substrate 1, an alignment film 28 a is formed so as to cover the reflective electrode 4 and the transmissive electrode 3.

  Here, the base electrode 20a is directly connected to the electrode 16c. The electrode 16c is electrically connected to the source / drain region 7b. Then, charges are supplied from the electrode 16c to the reflective electrode 4 and the transmissive electrode 3 through the base electrode 20a.

  Note that when the aluminum-based alloy constituting the reflective electrode 4 and the ITO constituting the transmissive electrode 3 are directly joined, a high-resistance aluminum oxide is generated at the joint. Therefore, it is difficult to achieve electrical conduction by directly connecting the aluminum-based alloy and ITO. For this reason, the base electrode 20a made of a material capable of achieving electrical continuity with both the reflective electrode 4 made of an aluminum alloy and the transmissive electrode 3 made of ITO is disposed. A chromium (Cr) film can be used as the material of the base electrode 20a. Further, the Cr film constituting the base electrode 20a can stably form a connection portion having a low electrical resistance with the lower electrode 16c through the contact hole 19a formed in the organic insulating film 18 and the insulating film 17.

  In a terminal region other than the display pixel region on the glass substrate 1, a terminal electrode 5 for supplying a power source current or the like to the liquid crystal display device or connecting an external driving IC or the like is formed. Specifically, in the terminal region, on the glass substrate 1, the insulating film 10 located on the base film 6 made of the silicon nitride film 51 and the silicon oxide film 52, the protective film 14 located on the insulating film 10, the protective film Insulating film 17 located on 14 and organic insulating film 18 located on insulating film 17 are formed. Each of the films described above is basically formed so as to extend from the display pixel region.

  A wiring 21 is formed between the protective film 14 and the insulating film 17. The wiring 21 is basically composed of the same layer as the electrodes 16a to 16c in the display pixel region, and has the same structure as the electrodes 16a to 16c. That is, the wiring 21 includes a molybdenum film 53 formed on the protective film 14, an aluminum alloy film 54 formed on the molybdenum film 53, and a molybdenum film 55 formed on the aluminum alloy film 54.

  The insulating film 17 is disposed so as to extend from the wiring 21 to the protective film 14. On the wiring 21, a part of the organic insulating film 18 and the insulating film 17 is removed by etching to form a contact hole 19c. At the bottom of the contact hole 19c, the upper surface of the wiring 21 is exposed.

  In the terminal region of the glass substrate 1, the base wiring 41 is formed so as to extend from the inside of the contact hole 19 c to the upper surface of the organic insulating film 18. The base wiring 41 is made of the same layer as the base electrode 20 and is formed of a chromium film. Further, an upper layer wiring 42 is formed on the base wiring 41. A connection wiring 43 is composed of the base wiring 41 and the upper wiring 42. The upper layer wiring 42 is made of the same layer as the reflective electrode 4 and is made of an aluminum-based alloy film. When the base wiring 41 contacts the upper surface of the wiring 21 at the bottom of the contact hole 19c, the wiring 21 and the base wiring 41 (that is, the connection wiring 43) are electrically connected.

  Further, on the upper surface of the organic insulating film 18, the terminal electrode 5 electrically connected to the base wiring 41 is formed. The terminal electrode 5 is made of the same layer as the transmissive electrode 3 and is made of an ITO film. The end portion 44 b of the terminal electrode 5 is in a state of being buried under the end portion 47 of the base wiring 41. That is, the end portion 47 of the base wiring 41 and the end portion 46 of the upper layer wiring 42 are in a state of riding on the end portion 44 b of the terminal electrode 5. The wiring 21 and the terminal electrode 5 are electrically connected by a connection wiring 43 including a base wiring 41 and an upper wiring 42.

  A counter glass substrate 25 is disposed so as to face the surface on which the reflective electrode 4 and the like described above are formed on the glass substrate 1. A color filter 23 is formed on the surface of the counter glass substrate 25 facing the glass substrate 1. A counter electrode 24 is formed on the surface of the color filter 23 facing the glass substrate 1. An alignment film 28 b is formed on the surface of the counter electrode 24 facing the glass substrate 1. The counter glass substrate 25 on which the color filter 23, the counter electrode 24, and the alignment film 28b are formed, and the glass substrate 1 on which the reflection electrode 4, the transmission electrode 3, the terminal electrode 5, the alignment film 28a, and the like are formed. Are bonded so as to face each other through the sealant 26. A liquid crystal 27 is injected and sealed in a region surrounded by the alignment films 28 a and 28 b and the sealing agent 26. The counter glass substrate 25 is shaped to cover the display pixel region of the glass substrate 1.

  2-12 is a cross-sectional schematic diagram for demonstrating the manufacturing method of the liquid crystal display device shown in FIG. A manufacturing method of the liquid crystal display device shown in FIG. 1 will be described with reference to FIGS.

  First, a glass substrate 1 (see FIG. 2) is prepared. A base film 6 is formed on the glass substrate 1 using a general method. Specifically, the silicon nitride film 51 (see FIG. 2) and the silicon oxide film 52 (see FIG. 2) are formed using, for example, PECVD (Plasma Enhanced Chemical Vapor Deposition). As the underlying film 6, a two-layer film composed of such a silicon nitride film 51 and a silicon oxide film 52 can be used, but a film having another structure may be used.

  Next, an amorphous silicon film is continuously formed on the base film 6. Then, using the excimer laser device, the channel region 8 and the source / drain regions 7a and 7b (see FIG. 1) of the thin film field effect transistor 2 (see FIG. 1) and the lower electrode 9 (see FIG. 1) of the storage capacitor 11 The amorphous silicon film to be formed is heat-treated. As a result, the amorphous silicon film is crystallized to form a polysilicon film.

  A resist film (not shown) having a pattern is formed on the polysilicon film by a photolithography process. Polysilicon films 29a and 29b (see FIG. 2) are formed by partially removing the polysilicon film by etching using this resist film as a mask. Thereafter, the resist film is removed. Then, the insulating film 10 (see FIG. 2) is formed so as to extend from the polysilicon films 29a and 29b to the base film 6. In this insulating film 10, a portion located on the polysilicon film 29b acts as a gate insulating film of the thin film field effect transistor 2 (see FIG. 1), and a portion located on the polysilicon film 29a is in the storage capacitor 11 (FIG. 1). Act as a dielectric film. As a material constituting the insulating film 10, for example, a TEOS (Tetra Ethoxy Silane) silicon oxide film formed by using a PECVD method can be used. In this way, a structure as shown in FIG. 2 is obtained.

  Next, phosphorus (P) ions are selectively implanted into the polysilicon film 29a (see FIG. 2). As a result, the lower electrode 9 (see FIG. 3) of the storage capacitor 11 (see FIG. 1) can be formed. Here, as a method of selectively injecting phosphorus ions, for example, a resist film having an opening pattern is formed on the polysilicon film 29a on the insulating film 10, and phosphorus ions are used as a mask with the resist film as a mask. It is possible to use a method such as injecting into the liquid.

  Next, a chromium film (not shown) is formed on the insulating film 10 by sputtering. A resist film having a pattern is formed on the chromium film using a photolithography process. Using this resist film as a mask, the chromium film is partially removed by etching. Thereafter, the resist film is removed. As a result, the gate electrode 12 (see FIG. 3) and the common electrode 13 (see FIG. 3) made of a chromium film can be obtained. Thereafter, n-type conductive impurities are implanted into the polysilicon film 29b, thereby forming source / drain regions 7a and 7b (see FIG. 3). At this time, the gate electrode 12 acts as a mask when implanting n-type conductive impurities. For example, phosphorus ions can be used as the n-type conductive impurity. Further, the portion of the polysilicon film 29b located under the gate electrode 12 is not implanted with phosphorus ions, and becomes the channel region 8 (see FIG. 3). As a result, the n-type thin film field effect transistor 2 and the storage capacitor 11 can be formed as shown in FIG.

  Next, a protective film 14 (see FIG. 4) is formed so as to extend from the gate electrode 12 and the common electrode 13 to the insulating film 10. In this way, a structure as shown in FIG. 4 is obtained. Here, as the protective film 14, a TEOS silicon oxide film formed using a PECVD method can be used (a silicon oxide film formed using TEOS PECVD can be used).

  Thereafter, an activation annealing process for activating the conductive impurities implanted in the source / drain regions 7a, 7b and the like is performed. As the heating temperature in this activation annealing treatment, for example, a value of 400 ° C. can be used.

  Next, a resist film (not shown) having a pattern is formed on the protective film 14. Using this resist film as a mask, protective film 14 and insulating film 10 are partially removed by etching. Thereafter, the resist film is removed. In this way, contact holes 15a to 15c (see FIG. 5) are formed. A molybdenum (Mo) film is formed by sputtering so as to extend from the inside of the contact holes 15a to 15c to the upper surface of the protective film 14. An aluminum alloy film is formed on the molybdenum film by sputtering. A molybdenum film is formed on the aluminum-based alloy film by sputtering.

  A resist film having a pattern is formed on the three-layer metal film thus formed. By using this resist film as a mask, the three-layer metal film is partially removed by etching, thereby forming electrodes 16a to 16c and wiring 21 (see FIG. 5). Thereafter, the resist film is removed. As a result, a structure as shown in FIG. 5 is obtained. As can be seen from FIG. 5, each of the electrodes 16a to 16c and the wiring 21 has a three-layer structure (three layers) in which a molybdenum film 53, an aluminum-based alloy film 54, and a molybdenum film 55 are sequentially laminated from the protective film 14 side. Film).

  Thereafter, hydrogenation of the channel region 8 is performed using hydrogen plasma. In this way, the characteristics of the thin film field effect transistor 2 (see FIG. 1) are improved and stabilized. Then, the insulating film 17 (see FIG. 6) is formed so as to extend from the electrodes 16a to 16c and the wiring 21 to the protective film 14. As this insulating film 17, for example, a silicon nitride film can be used.

  Next, an organic insulating film 18 (see FIG. 6) is formed on the insulating film 17. A resist film (not shown) having a pattern is formed on the organic insulating film 18. Using this resist film as a mask, the organic insulating film 18 and the insulating film 17 are partially removed by etching to form contact holes 19a to 19c. Thereafter, the resist film is removed. In this way, a structure as shown in FIG. 6 is obtained.

  As can be seen from FIG. 6, the contact hole 19a is formed on the electrode 16c, and a part of the upper surface of the electrode 16c is exposed at the bottom of the contact hole 19a. The contact hole 19c is formed on the wiring 21, and the upper surface of the wiring 21 is partially exposed at the bottom of the contact hole 19c.

  Next, the pixel electrode and the terminal electrode of the transflective liquid crystal display device are formed by the following flow. First, as shown in FIG. 7, an amorphous ITO film 59 is formed so as to extend from the inside of the contact holes 19 a to 19 c to the upper surface of the organic insulating film 18. The thickness of the ITO film 59 can be about 100 nm, for example.

  Next, as shown in FIG. 8, the transmissive electrode 3 (see FIG. 9) and the terminal electrode 5 (see FIG. 9) are formed by the first photoengraving process in the process of forming the pixel electrode and the terminal electrode. A resist film 58 (see FIG. 8) having a pattern for forming is formed. As a result, a structure as shown in FIG. 8 is obtained.

  Then, the ITO film 59 is partially removed by wet etching using the resist film 58 as a mask. As an etchant used in this wet etching, for example, an oxalic acid-based etchant can be used. Thereafter, the resist film 58 is removed. As a result, a structure as shown in FIG. 9 is obtained. As can be seen from FIG. 9, the transmissive electrode 3 and the terminal electrode 5 are formed by the etching described above. The transmissive electrode 3 and the terminal electrode 5 are made of the ITO film described above.

  Next, as shown in FIG. 10, a chromium film 56 and an aluminum alloy film 57 are continuously formed on the upper surfaces of the transmissive electrode 3, the terminal electrode 5, and the organic insulating film 18 by a sputtering method. The film thickness of the chromium film 56 can be about 50 nm, for example. The film thickness of the aluminum-based alloy film 57 can be about 150 nm, for example.

  Next, a resist film 58 is formed as shown in FIG. 11 by performing the second photolithography process. The resist film 58 has a pattern for forming the reflective electrode 4 (see FIG. 12) and the connection wiring 43 (see FIG. 12).

  Next, using the resist film 58 as a mask, the aluminum-based alloy film 57 and the chromium film 56 are partially removed by etching. Thereafter, the resist film 58 is removed. As a result, as shown in FIG. 12, the base electrode 20, the reflective electrode 4, and the connection wiring 43 including the base wiring 41 and the upper layer wiring 42 can be formed.

  As shown in FIG. 12, the ITO film constituting the transmissive electrode 3 is formed by causing the reflective electrode 4 and the base electrode 20 to run on the end 44 a of the transmissive electrode 3 (so as to be an upper layer of the transmissive electrode 3). And the base electrode 20 made of a chromium film can be easily connected directly.

  Further, since the reflective electrode 4 and the base electrode 20 have the same planar shape (because it is not necessary to process the reflective electrode 4 and the base electrode 20 into different shapes), as shown in FIGS. The reflective electrode 4 and the base electrode 20 can be formed continuously at a time by etching using the resist film 58 formed by a single photolithography process. As a result, by performing the photoengraving process twice in total, the pixel electrode (including the reflective electrode 4 and the transmissive electrode 3) and the terminal electrode (including the terminal electrode 5) in the transflective liquid crystal display device are obtained. Can be completed.

  The effects of the above-described liquid crystal display device according to the present invention will be described in more detail by comparing with the structure of a liquid crystal display device as a reference example and the manufacturing method thereof. FIG. 13 is a schematic cross-sectional view showing a liquid crystal display device as a reference example for explaining the effects of the liquid crystal display device according to the present invention. 14 to 23 are schematic cross-sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG.

  The liquid crystal display device as a reference example shown in FIG. 13 basically has the same structure as the liquid crystal display device shown in FIG. 1, but the base electrodes 20a and 20b, the reflective electrode 4, the transmissive electrode 3, and the terminals. The structure of the electrode 5 is different. In the liquid crystal display device shown in FIG. 13, the base electrode 20 a and the base electrode 20 a are formed so as to extend from the inside of the contact hole 19 a in the display pixel region to the upper surface of the organic insulating film 18. A reflective electrode 4 constituting the pixel electrode is disposed.

  Further, the base electrode 20a does not extend to the inside of the contact hole 19b. That is, an opening 22 is formed in the base electrode 20a so as to expose the portion of the organic insulating film 18 where the contact hole 19b is formed. Then, a transmissive electrode 3 made of a transparent conductive material (for example, an ITO film) is formed so as to extend from the inner wall of the contact hole 19b to the base electrode 20a and the end of the reflective electrode 4 in the opening 22. Has been. The position of the side surface 36 located on the contact hole 19b side of the base electrode 20a is arranged at a position shifted to the contact hole 19b side from the position of the side surface 35 of the reflective electrode 4 (the end 37 of the base electrode 20a is It is in a state of protruding from the position of the side surface 35 of the reflective electrode 4). For this reason, the transmissive electrode 3 is in an electrically connected state by being in contact with the base electrode 20a.

  In a terminal region that is a region other than the display pixel region on the glass substrate 1, a base electrode 20b is formed so as to extend from the inside of the contact hole 19c to the upper surface of the organic insulating film 18. The base electrode 20b is made of the same layer as the base electrode 20a in the display pixel region. A terminal electrode 5 is formed on the base electrode 20b. The terminal electrode 5 is composed of the same layer as the transmissive electrode 3. Here, the terminal electrode 5 is made of ITO which is the same material as that of the transmissive electrode 3. The base electrode 20b is directly connected to the upper surface of the wiring 21 inside the contact hole 19c. The terminal electrode 5 is disposed in a state of covering at least a part of the upper surface of the base electrode 20b.

  Next, a method for manufacturing the liquid crystal display device shown in FIG. 13 will be described with reference to FIGS.

  First, after performing the steps shown in FIGS. 2 to 6, pixel electrodes and terminal electrodes of a transflective liquid crystal display device are formed according to the following steps. Specifically, first, as shown in FIG. 14, a chromium (Cr) film 56 and an aluminum (Al) -based alloy film 57 are continuously formed using a sputtering method. Here, the film thickness of the chromium film 56 can be about 50 nm, for example. The film thickness of the aluminum-based alloy film 57 can be set to, for example, about 150 nm.

  Next, as shown in FIG. 15, a resist film 58 having a pattern for forming the reflective electrode 4 (see FIG. 13) is formed by the first photolithography process. Then, using this resist film 58 as a mask, the aluminum-based alloy film 57 is partially removed by etching, thereby forming the reflective electrode 4 (see FIG. 16). Thereafter, the resist film 58 is removed. As a result, a structure as shown in FIG. 16 is obtained.

  Next, a resist film 58 (see FIG. 17) having a pattern for forming an opening 22 (see FIG. 18) exposing the portion where the contact hole 19b is formed in the organic insulating film 18 by the second photolithography process. ). As a result, a structure as shown in FIG. 17 is obtained.

  Then, using the resist film 58 shown in FIG. 17 as a mask, the chromium film 56 is partially removed by etching, thereby forming an opening 22 (see FIG. 18) in the chromium film 56. Thereafter, the resist film 58 (see FIG. 17) is removed. As a result, a structure as shown in FIG. 18 is obtained.

  Next, an amorphous ITO film 59 (see FIG. 19) is formed by sputtering to extend from above the reflective electrode 4 to the inside of the contact hole 19b of the chromium film 56 and the organic insulating film 18. As a result, a structure as shown in FIG. 19 is obtained. As the film thickness of the ITO film 59, for example, a value of about 100 nm can be used.

  Next, by forming a resist film 58 having a pattern for forming the transmissive electrode 3 (see FIG. 21) and the terminal electrode 5 (see FIG. 21) on the ITO film 59, a structure as shown in FIG. Get. Then, using the resist film 58 (see FIG. 20) formed by the third photolithography as described above as a mask, the ITO film 59 is partially removed by etching, whereby the transmissive electrode 3 (FIG. 21) is obtained. And the terminal electrode 5 (see FIG. 21) are formed. In this etching, wet etching is performed using an oxalic acid-based etchant. Thereafter, the resist film 58 (see FIG. 20) is removed. As a result, a structure as shown in FIG. 21 is obtained. Here, the end portion 38 of the transmissive electrode 3 is formed so as to extend to the end portion of the chromium film 56 to be the base electrode 20 a (see FIG. 13) and the end portion of the reflective electrode 4.

  Next, as shown in FIG. 22, a resist film 58 having a pattern used as a mask for forming the base electrodes 20a and 20b (see FIG. 13) is formed by the fourth photolithography process. Then, using this resist film 58 as a mask, the chromium film 56 is partially removed by etching. As a result, the base electrodes 20a and 20b constituting the pixel electrode in the display pixel region and the terminal electrode in the terminal region can be separated from each other. Thereafter, the resist film 58 is removed. As a result, a structure as shown in FIG. 23 is obtained. Thus, by using a total of four photolithography processes, the pixel electrode (pixel electrode composed of the base electrode 20a, the reflective electrode 4 and the transmissive electrode 3) and the terminal electrode (terminal electrode 5) in the transflective liquid crystal display device are used. And a terminal electrode comprising the base electrode 20b) are completed.

Here, in etching (wet etching) of the chromium film 56 (see FIG. 17) or the like, cerium ammonium nitrate (chemical formula: Ce (NH ₄ )) which is an etchant (etching solution) for a general chromium film. _An etchant (etching solution) containing perchloric acid (chemical formula: HClO ₄ ) in an aqueous solution of ₂ (NO ₃ ) ₆ ) can be used.

  Then, in the display pixel region of the glass substrate 1, an alignment film 28a (see FIG. 13) is formed on the reflective electrode 4 and the transmissive electrode 3 using a normal method. Further, using a normal method, a counter glass substrate on which the color filter 23 (see FIG. 13), the counter electrode 24 (see FIG. 13), and the alignment film 28b (see FIG. 13) are formed is prepared. And the glass substrate 1 and the opposing glass substrate 25 are bonded together through the sealing agent 26 (refer FIG. 13) so that each alignment film 28a and 28b may oppose. Then, liquid crystal 27 (see FIG. 13) is injected and sealed in the gap formed by the presence of the sealing agent 26 between the glass substrate 1 and the counter glass substrate 25. By performing such a predetermined process, a liquid crystal display device as shown in FIG. 13 can be obtained.

  As described above, in the method of manufacturing the liquid crystal display device as the comparative example shown in FIGS. 14 to 23, the photolithography process is performed four times in total as shown in FIGS. 15, 17, 20, and 22. It is necessary. Compared with the manufacturing method of the liquid crystal display device as such a reference example, the manufacturing method of the liquid crystal display device according to the present invention shown in FIGS. 1 to 12 is a photoengraving process necessary for forming the pixel electrode and the terminal electrode. Since the processing process is performed twice, it can be seen that the manufacturing method of the liquid crystal display device according to the present invention can reduce the manufacturing process as compared with the manufacturing method of the liquid crystal display device of the reference example. Therefore, the liquid crystal display device according to the present invention shown in FIG. 1 can reduce the manufacturing cost and the manufacturing period compared to the liquid crystal display device of the reference example shown in FIG.

  FIG. 24 is a schematic cross-sectional view showing a modification of the first embodiment of the liquid crystal display device according to the present invention. A modification of the first embodiment of the liquid crystal display device according to the present invention will be described with reference to FIG.

  As shown in FIG. 24, the liquid crystal display device basically has the same structure as the liquid crystal display device shown in FIG. 1, but the structure of the connection portion between the transmission electrode 3 and the terminal electrode 5 and the wiring 21 is different. ing. Specifically, in the display pixel region of the liquid crystal display device shown in FIG. 24, a contact hole corresponding to the contact hole 19b in the liquid crystal display device shown in FIG. 1 is not formed. Therefore, the transmissive electrode 3 is formed on the flat upper surface of the organic insulating film 18.

  Here, the contact hole 19b is formed in the liquid crystal display device shown in FIG. 1 for the purpose of reducing the attenuation of light when light passes through the organic insulating film 18. However, when the light transmittance in the organic insulating film 18 is sufficiently large, the above-described degree of attenuation of the transmitted light is small. Therefore, as shown in FIG. 24, a structure in which the transmissive electrode 3 is formed on the upper surface of the organic insulating film 18 without providing a contact hole or the like may be employed.

  In the liquid crystal display device shown in FIG. 24, the diameter of the contact hole 19d that partially exposes the upper surface of the wiring 21 in the terminal region is larger than the diameter of the contact hole 19c in the liquid crystal display device shown in FIG. ing. The terminal electrode 5 is disposed on the protective film 14 at the bottom of the contact hole 19d. This is because it may be preferable to adopt the structure of the portion of the terminal electrode 5 as shown in FIG. 24 in accordance with the shape of the terminal of the power supply connected to the terminal electrode 5 or the connecting portion of the driving IC. It is.

  In the liquid crystal display device shown in FIG. 24, the wiring 21 and the terminal electrode 5 are electrically connected by the connection wiring 43. The connection wiring 43 includes a base wiring 41 and an upper wiring 42. The connection wiring 43 is formed so as to extend from the upper surface of the wiring 21 to the end 44 b of the terminal electrode 5. The end of the base wiring 41 in the connection wiring 43 and the end 44 b of the terminal electrode 5 are electrically connected by being in contact with each other. The connection wiring 43 is also formed so as to extend from the side wall of the contact hole 19d to the upper surface of the organic insulating film 18.

  In the liquid crystal display device shown in FIG. 24, the terminal electrode 5 and the wiring 21 are electrically connected by the connection wiring 43. For example, the terminal electrode 5 is connected to the upper surface of the wiring 21 from the protective film 14. The wiring 21 and the terminal electrode 5 may be brought into direct contact with each other so as to be electrically connected. The structure of the transmissive electrode 3 and the terminal electrode 5 shown in FIG. 24 can be applied to each of the embodiments of the liquid crystal display device according to the present invention described below.

  25 to 27 are schematic cross-sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG. A manufacturing method of the liquid crystal display device shown in FIG. 24 will be described with reference to FIGS.

  First, after performing the steps of the method for manufacturing the liquid crystal display device shown in FIGS. 2 to 5, an insulating film 17 (see FIG. 25) is formed on the electrodes 16 a to 16 c, the wiring 21, and the protective film 14. An organic insulating film 18 (see FIG. 25) is formed on the insulating film 17. A resist film (not shown) having a pattern is formed on the organic insulating film 18 by a photolithography process. This resist film is used as a mask for forming contact holes 19a and 19d (see FIG. 25). Using this resist film as a mask, the organic insulating film 18 and the insulating film 17 are partially removed by etching. Thereafter, the resist film is removed. As a result, as shown in FIG. 25, contact holes 19a and 19d can be formed.

  Next, an amorphous ITO film (not shown) is formed from the inside of the contact holes 19 a and 19 d to the upper surface of the organic insulating film 18. A resist film having a pattern is formed on the ITO film by a photolithography process. Using this resist film as a mask, the ITO film is partially removed by etching. Thereafter, the resist film is removed. As a result, the transmissive electrode 3 and the terminal electrode 5 can be formed as shown in FIG. Thereafter, a chromium film and an aluminum alloy film (not shown) are continuously formed by a sputtering method so as to extend from the transmissive electrode 3 and the terminal electrode 5 to the upper surface of the organic insulating film 18. . Then, a resist film having a pattern is formed on the aluminum-based alloy film by photolithography. Using this resist film as a mask, the aluminum-based alloy film and the chromium film are partially removed by etching. Thereafter, the resist film is removed. As a result, as shown in FIG. 27, the base electrode 20 made of a chromium film, the reflective electrode 4 made of an aluminum alloy film, the base wiring 41 made of a chromium film, and the upper wiring 42 made of an aluminum alloy film can be formed. it can. A connection wiring 43 is composed of the base wiring 41 and the upper wiring 42.

  Thereafter, as shown in FIG. 24, the step of forming an alignment film 28a so as to cover the reflective electrode 4 and the transmissive electrode 3 in the display pixel region, the counter glass substrate 25 including the color filter 23, the counter electrode 24, and the alignment film 28b. And the step of connecting and fixing the glass substrate 1 and the opposing glass substrate 25 to face each other via the sealing agent 26, and the presence of the sealing agent 26 between the glass substrate 1 and the opposing glass substrate 25. A liquid crystal display device as shown in FIG. 24 can be obtained by performing a step of injecting and sealing liquid crystal 27 (see FIG. 23) into the formed gap.

(Embodiment 2)
FIG. 28 is a schematic sectional view showing Embodiment 2 of the liquid crystal display device according to the present invention. A second embodiment of the liquid crystal display device according to the present invention will be described with reference to FIG.

  The liquid crystal display device shown in FIG. 28 basically has the same structure as the liquid crystal display device shown in FIG. 1, but the structure of the reflective electrode 4 and the connection wiring 43 is different from that of the liquid crystal display device shown in FIG. Is different. That is, in the liquid crystal display device shown in FIG. 28, the reflective electrode 4 made of a silver (Ag) alloy is formed so as to extend from the inside of the contact hole 19a to the upper surface of the organic insulating film 18. . At the bottom of the contact hole 19a, the reflective electrode 4 and the electrode 16c are electrically connected by directly connecting the reflective electrode 4 and the upper surface of the electrode 16c.

  Further, the end portion 39 of the reflective electrode 4 is disposed so as to partially overlap the end portion 44a of the transmissive electrode 3 made of an ITO film. In this portion, the reflective electrode 4 and the transmissive electrode 3 are electrically connected. That is, necessary charges are supplied to the transmissive electrode 3 from the electrode 16 c through the reflective electrode 4.

  The silver-based alloy that constitutes the reflective electrode 4 is a material that can be directly joined to the ITO that constitutes the transmissive electrode 3 to achieve necessary electrical conduction. Also, the silver-based alloy can stably form a low resistance connection portion with the electrode 16c, which is the lower conductive layer, even through the contact hole 19a formed in the organic insulating film 18. Further, the silver-based alloy exhibits a light reflectance necessary as a material for the reflective electrode 4. Therefore, unlike the liquid crystal display device shown in FIG. 1, it is not necessary to form the base electrode 20 in order to achieve conduction between the reflective electrode 4 and the electrode 16 c and conduction between the transmissive electrode 3.

  Also in the terminal region, the connection wiring 43 made of a silver alloy is formed so as to extend from the inside of the contact hole 19 c to the upper surface of the organic insulating film 18. The end portion 46 of the connection wiring 43 is disposed so as to run on the end portion 44 b of the terminal electrode 5. The end 46 of the connection wiring 43 and the end 44b of the terminal electrode 5 are electrically connected.

  Here, the connection wiring 43 is made of the same layer as the reflective electrode 4 and is made of a silver alloy. As described above, the silver-based alloy can be directly bonded to the ITO film constituting the terminal electrode 5 to achieve necessary electrical conduction, and the lower conductor layer at the bottom of the contact hole 19c of the organic insulating film 18 The wiring 21 and the low resistance connection portion can be stably formed. For this reason, the wiring 21 and the terminal electrode 5 can be electrically connected via the connection wiring 43.

  29 to 31 are schematic cross-sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG. A manufacturing method of the liquid crystal display device shown in FIG. 28 will be described with reference to FIGS.

  First, steps similar to those in the method for manufacturing the liquid crystal display device shown in FIGS. As a result, by performing the first photolithography process (see FIG. 8) for forming the pixel electrode and the terminal electrode, the transmissive electrode 3 and the terminal electrode 5 (see FIG. 9) are formed. Then, a silver-based alloy film 70 (see FIG. 29) is formed so as to extend from above the transmissive electrode 3 and the terminal electrode 5 to the upper surface of the organic insulating film 18. As a result, a structure is obtained as shown in FIG. The silver-based alloy film 70 is formed using a sputtering method. The film thickness of the silver-based alloy film 70 can be about 150 nm, for example.

  Next, a resist film 58 having a pattern as shown in FIG. 30 is formed on the silver-based alloy film 70 by the second photolithography process. The resist film 58 shown in FIG. 30 has a pattern corresponding to the reflective electrode 4 and the connection wiring 43 (see FIG. 31). Then, using this resist film 58 as a mask, the silver-based alloy film 70 is partially removed by etching. Thereafter, the resist film 58 is removed. As a result, as shown in FIG. 31, the reflective electrode 4 and the connection wiring 43 made of a silver-based alloy film can be formed. In this way, the pixel electrode (the reflective electrode 4 and the transmissive electrode 3) and the terminal electrode (the connection wiring 43 and the terminal electrode 5) in the transflective liquid crystal display device are formed by performing the photoengraving process twice in total. can do.

  Thereafter, in the same manner as the manufacturing method of the first embodiment of the liquid crystal display device according to the present invention, the step of forming the alignment film 28a (see FIG. 28), the counter glass on which the color filter 23, the counter electrode 24 and the alignment film 28b are formed. Forming between the glass substrate 1 and the counter glass substrate 25 by the step of preparing the substrate 25, the step of arranging the glass substrate 1 and the counter glass substrate 25 to face each other via the sealant 26 and connecting and fixing them, and the sealant 26 The liquid crystal display device shown in FIG. 28 can be obtained by performing the step of injecting and sealing the liquid crystal 27 into the gap.

  Thus, by adopting a silver alloy as the material of the reflective electrode 4, it is necessary to form the base electrode 20 (see FIG. 1) made of a chromium film as in the first embodiment of the liquid crystal display device according to the present invention. Absent. This is because the silver-based alloy is a material having a light reflectance necessary as a material of the reflective electrode 4 and is electrically connected to the ITO film and between the electrode 16c through the contact hole 19a. This is because the material can realize electrical connection with low resistance. Therefore, as compared with the manufacturing method of the liquid crystal display device according to the first embodiment of the present invention, in the manufacturing method of the liquid crystal display device shown in FIGS. 29 to 31, the base electrode 20 made of a chromium film (see FIG. 1). A series of steps from the formation of the chromium film to form the etching process to the etching process is not necessary. That is, the number of manufacturing steps can be further reduced as compared with the manufacturing method of the first embodiment of the liquid crystal display device according to the present invention. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  Further, by adopting a structure in which the end portion 39 of the reflective electrode 4 rides on the end portion 44a of the transmissive electrode 3, the same effect as in the first embodiment of the liquid crystal display device according to the present invention can be obtained. Further, since the connection wiring 43 is made of a silver alloy that is the same layer as the reflective electrode 4, the connection wiring 43 can be formed in the same process as the reflective electrode 4 constituting the pixel electrode. For this reason, a pixel electrode and a terminal electrode can be formed by performing photoengraving processing twice in total.

(Embodiment 3)
FIG. 32 is a schematic sectional view showing Embodiment 3 of the liquid crystal display device according to the present invention. A third embodiment of the liquid crystal display device according to the present invention will be described with reference to FIG.

  The liquid crystal display device shown in FIG. 32 basically has the same structure as the liquid crystal display device shown in FIG. 1, but the shapes of the transmissive electrode 3 and the terminal electrode 5 are different. That is, in the liquid crystal display device shown in FIG. 32, the transmissive electrode 3 is formed so as to be in contact with the entire lower surface of the base electrode 71. That is, the transmissive electrode 3 is formed so as to extend from the inside of the contact hole 19b to the upper surface of the organic insulating film 18 and the inside of the contact hole 19a.

  In the terminal region, the terminal electrode 5 is formed so as to extend into the contact hole 19c. A protective cap 74 composed of a base layer 72 and an upper layer 73 is formed on a region of the terminal electrode 5 located inside the contact hole 19c.

  In the liquid crystal display device shown in FIG. 32, the material constituting the base electrode 71 is different from the material constituting the base electrode 20 of the liquid crystal display device shown in FIG. That is, in the liquid crystal display device shown in FIG. 32, the material constituting the base electrode 71 is an alloy containing aluminum containing nitrogen as a main component (hereinafter also referred to as nitrogen-containing aluminum-based alloy). Further, since the base layer 72 constituting the protective cap 74 is formed of the same layer as the base electrode 71, the base layer 72 is also formed of a nitrogen-containing aluminum-based alloy. The material constituting the reflective electrode 4 is an aluminum-based alloy. Further, since the upper layer 73 constituting the protective cap 74 is constituted by the same layer as the reflective electrode 4, the material constituting the upper layer 73 is the same aluminum alloy as the material constituting the reflective electrode 4.

  Here, the nitrogen-containing aluminum-based alloy is directly bonded to both the ITO film and the aluminum-based alloy film in the same manner as the chromium film used as the material of the base electrode 20 in the liquid crystal display device shown in FIG. Continuity can be achieved. Further, the ITO film can form a low-resistance connection portion with the electrode 16c, which is a lower conductive layer, through a contact hole 19a formed in the organic insulating film 18. The protective cap 74 shown in FIG. 32 may be omitted.

  Next, a method for manufacturing the liquid crystal display device shown in FIG. 32 will be described with reference to FIGS. 33 to 37 are schematic cross-sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG.

  First, after the steps shown in FIGS. 2 to 7 are performed, the first photoengraving step in the step of forming the pixel electrode and the terminal electrode is performed, so that the ITO film 59 is formed on the ITO film 59 as shown in FIG. A resist film 58 having a pattern is formed. The resist film 58 has a planar shape corresponding to the planar shapes of the transmissive electrode 3 (see FIG. 34) and the terminal electrode 5 (see FIG. 34). Using this resist film 58 as a mask, the ITO film 59 is partially removed by etching. In this etching, an oxalic acid-based etching solution can be used. Thereafter, the resist film is removed. As a result, the transmissive electrode 3 and the terminal electrode 5 can be formed as shown in FIG.

  Next, as shown in FIG. 35, a nitrogen-containing aluminum-based alloy film 75 and an aluminum-based alloy film 57 are continuously formed on the upper surfaces of the transmissive electrode 3, the terminal electrode 5 and the organic insulating film 18 by sputtering. To get a good structure. As a method for forming the nitrogen-containing aluminum-based alloy film 75 and the aluminum-based alloy film 57, for example, at the initial stage of film formation, an aluminum-based alloy film is formed by sputtering while flowing nitrogen gas into the reaction vessel. In this way, the nitrogen-containing aluminum-based alloy film 75 can be formed. Then, the inflow of nitrogen gas into the reaction vessel is stopped from the middle, and an aluminum alloy film is formed by sputtering to continuously form the aluminum alloy film 57 on the nitrogen-containing aluminum alloy film 75. can do. In this way, a two-layer film composed of the nitrogen-containing aluminum-based alloy film 75 and the aluminum-based alloy film 57 can be formed. Here, the film thickness of the nitrogen-containing aluminum-based alloy film 75 can be about 20 nm, for example. The film thickness of the aluminum-based alloy film 57 can be set to, for example, about 150 nm.

  Next, by performing a second photolithography process, a resist film 58 having a pattern is formed on the aluminum-based alloy film 57 as shown in FIG. The resist film 58 has a planar shape corresponding to the reflective electrode 4 (see FIG. 37) and the protective cap 74 (see FIG. 37). Then, using this resist film 58 as a mask, the aluminum-based alloy film 57 and the nitrogen-containing aluminum-based alloy film 75 are partially removed by continuous etching using the same etching solution. Thereafter, the resist film 58 is removed. As a result, as shown in FIG. 37, the reflective electrode 4, the base electrode 71, and the protective cap 74 can be formed. The protective cap 74 includes a base layer 72 made of a nitrogen-containing aluminum-based alloy film and an upper layer 73 made of an aluminum-based alloy film.

  Thereafter, as in the manufacturing method of the liquid crystal display device according to the first embodiment of the present invention, the liquid crystal display device shown in FIG. 32 can be obtained by performing the step of forming the alignment film 28a and the like.

  Thus, the structure in which the entire reflective electrode 4 and the base electrode 71 are laminated on the transmissive electrode 3 (the structure in which the entire lower surface of the base electrode 71 is in contact with a part of the upper surface of the transmissive electrode 3). By adopting, the connection area between the transmissive electrode 3 made of an ITO film and the base electrode 71 can be increased. As a result, the connection resistance of the connection portion between the transmissive electrode 3 and the base electrode 71 can be reduced.

  Further, as described above, the reflective electrode 4 and the base electrode 71 are made of materials that can be processed with the same etching solution, that is, an aluminum-based alloy film and a nitrogen-containing aluminum-based alloy film, respectively. Can be processed continuously in the same etching step. Further, since the lower surface of the base electrode 71 and the transmissive electrode 3 are connected, it is not necessary to make the planar shapes of the reflective electrode 4 and the base electrode 71 different from each other. Can be formed continuously (with the same planar shape) in one etching step.

  Further, since the nitrogen-containing aluminum-based alloy film constituting the base electrode 71 can achieve electrical continuity with both the aluminum-based alloy film constituting the reflective electrode 4 and the ITO film constituting the transmissive electrode 3, the base electrode 71 is suitable as a material constituting 71. Further, the ITO film constituting the transmissive electrode 3 is formed so as to be in contact with the electrode 16 c which is a lower conductor layer through a contact hole 19 a formed in the organic insulating film 18. The ITO film constituting the transmissive electrode 3 can form a low-resistance electrical connection with the electrode 16c.

  In addition, as a material of the base electrode 71, materials other than the nitrogen-containing aluminum-based alloy film as described above can be used. In this case, as a material constituting the base electrode 71, for example, a refractory metal material such as a molybdenum-based alloy or a chromium film may be used. Also in this case, electrical conduction between the material constituting the reflective electrode 4 and the material constituting the transmissive electrode 3 can be achieved. For this reason, the effect similar to the case where the nitrogen-containing aluminum-type alloy film mentioned above is used as a constituent material of the base electrode 71 can be acquired.

  Further, the surface of the electrode 16c exposed on the side surface of the contact hole 19a or the side surface of the contact hole 19c is developed by a developer used in photolithography for forming the reflective electrode 4 or an etching solution used in the subsequent etching process. There is a possibility that the surface of the exposed wiring 21 is corroded. However, in the liquid crystal display device as shown in FIG. 32, the reflective electrode 4 and the protective cap 74 are left on the contact holes 19a and 19c in both the display pixel region and the terminal region. It is possible to reduce the possibility of problems such as corrosion of the surfaces of the electrodes 16c and the wiring 21. For the above-described developer and etchant, a composition that hardly corrodes the electrode 16c and the wiring 21 is adopted, and the etching conditions are set such that the overetching time is set short. The protective cap 74 can be omitted.

  Since the protective cap 74 is basically formed of the same layer as the reflective electrode 4 and the base electrode 71, the protective cap 74 can be formed simultaneously with the reflective electrode 4 and the base electrode 71. As described above, by performing the photoengraving process twice, the pixel electrodes (transmission electrode 3, reflection electrode 4 and base electrode) in the transflective liquid crystal display device in each of the display pixel region and the terminal region are obtained. 71) and the terminal electrode 5 (further, a protective cap 74) can be formed.

(Embodiment 4)
FIG. 38 is a schematic sectional view showing Embodiment 4 of the liquid crystal display device according to the present invention. 38, a fourth embodiment of the liquid crystal display device according to the present invention will be described.

  The liquid crystal display device shown in FIG. 38 basically has the same structure as that of the liquid crystal display device shown in FIG. 32, but the reflective electrode 4 is made of a silver alloy and the liquid crystal display shown in FIG. The difference is that the base electrode 71 does not exist in the apparatus. Also, in the terminal region of the liquid crystal display device shown in FIG. 38, the protective cap 74 is not a two-layer film like the protective cap 74 of the liquid crystal display device shown in FIG. A protective cap 74 is constituted by a single layer film of an alloy.

  The reflective electrode 4 is shaped so as to cover a part on the upper surface of the transmissive electrode 3 including a portion located on the contact hole 19a. Further, similarly to the protective cap 74 in the third embodiment, the protective cap 74 shown in FIG. 38 can be omitted.

  39 to 41 are schematic cross-sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG. A manufacturing method of the liquid crystal display device shown in FIG. 38 will be described with reference to FIGS.

  First, after the steps shown in FIGS. 2 to 7 and the steps shown in FIGS. 33 and 34 are performed, the transparent electrode 3 and the terminal electrode 5 are formed on the upper surface of the organic insulating film 18 as shown in FIG. The silver-based alloy film 70 is formed by sputtering so as to extend to In the process shown in FIG. 33, the first photolithography process for forming the transmissive electrode 3 and the like is performed.

  Then, following the process shown in FIG. 39, a second photolithography process is performed to form a resist film 58 having a pattern on the silver-based alloy film 70 as shown in FIG. The resist film 58 has a planar shape corresponding to the planar shapes of the reflective electrode 4 (see FIG. 41) and the protective cap 74 (see FIG. 41).

  Then, the silver-based alloy film 70 is partially removed by etching using the resist film 58 as a mask. Thereafter, the resist film 58 is removed. As a result, as shown in FIG. 41, the reflective electrode 4 and the protective cap 74 made of a silver-based alloy film can be formed.

  Thereafter, as in the first embodiment of the method for manufacturing a liquid crystal display device according to the present invention, the step of forming the alignment film 28a and the like are performed, whereby the liquid crystal display device shown in FIG. 38 can be obtained.

  Thus, in the liquid crystal display device shown in FIG. 38, a silver alloy film is employed as the material of the reflective electrode 4. The silver-based alloy film is a material having a light reflectance necessary as a material for the reflective electrode 4. Further, the silver-based alloy film can form a low resistance electrical connection with the ITO film. Therefore, it is not necessary to form the base electrode 71 unlike the liquid crystal display device shown in FIG. Therefore, as compared with the liquid crystal display device shown in FIG. 32, a process from a film forming process to an etching process for forming the base electrode 71 in the manufacturing process becomes unnecessary. Therefore, the number of manufacturing steps can be further reduced as compared with the manufacturing steps of the liquid crystal display device shown in FIG. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  Compared with the liquid crystal display device shown in FIG. 28, in the liquid crystal display device shown in FIG. 38, the reflective electrode 4 is connected to the transmissive electrode 3 over the entire lower surface (the entire lower surface of the reflective electrode 4 is The contact area between the transmissive electrode 3 made of an ITO film and the reflective electrode 4 can be increased. For this reason, the electrical resistance of the connection part between the transmissive electrode 3 and the reflective electrode 4 can be reduced. In addition, since the base electrode 20 as shown in FIG. 1 is not formed, a single photolithography process and etching process may be performed to form the reflective electrode 4.

  Further, since the reflective electrode 4 and the protective cap 74 are structured to remain in the contact holes 19a and 19c, respectively, the silver-based alloy film is etched in the step of forming the reflective electrode 4 and the protective cap 74. The possibility of corrosion of the electrode 16c and the wiring 21 located at the bottom of the contact holes 19a and 19c can be reduced by an etching solution or a developing solution used in photolithography for forming a resist film used for the etching.

  Further, since the protective cap 74 is composed of the same layer (same material) as the reflective electrode 4, the protective cap 74 can be formed in the same process when the reflective electrode 4 is formed. For this reason, even when the protective cap 74 is formed, the number of photolithography processes is not particularly increased (that is, two photolithography processes are performed to form the pixel electrodes and the terminal electrodes). .

(Embodiment 5)
42 to 46 are schematic cross-sectional views for explaining Embodiment 5 of the method for manufacturing a liquid crystal display device according to the present invention. With reference to FIGS. 42 to 46, the fifth embodiment of the manufacturing method of the liquid crystal display device according to the present invention will be described. The liquid crystal display device obtained by the manufacturing method shown in FIGS. 42 to 46 basically has the same structure as the liquid crystal display device shown in FIG.

  First, after carrying out the steps shown in FIGS. 2 to 6, as shown in FIG. 42, an ITO film 59, a nitrogen-containing aluminum-based alloy film 75, and an aluminum-based alloy film 57 are sputtered on the organic insulating film 18. To form continuously. Specifically, the nitrogen-containing aluminum-based alloy film 75 can be formed by forming an aluminum-based alloy film while flowing a nitrogen gas following the process of forming the ITO film 59. By stopping the supply of nitrogen gas into the reaction vessel when the thickness of the nitrogen-containing aluminum-based alloy film 75 reaches a predetermined thickness, the film-forming process of the aluminum-based alloy film is continued. An aluminum alloy film 57 can be formed. In this manner, a three-layer film including the ITO film 59, the nitrogen-containing aluminum-based alloy film 75, and the aluminum-based alloy film 57 can be formed.

  The film thickness of the ITO film 59 can be about 100 nm, for example. Further, the film thickness of the nitrogen-containing aluminum-based alloy film 75 can be set to, for example, about 20 nm. The film thickness of the aluminum-based alloy film 57 can be set to, for example, about 150 nm.

  Next, as shown in FIG. 43, a resist film 58 having a pattern is formed on the aluminum-based alloy film 57 by the first photoengraving process in the process of forming the pixel electrode and the terminal electrode. The resist film 58 has a planar shape corresponding to the planar shapes of the reflective electrode 4 (see FIG. 44) and the protective cap 74 (see FIG. 44). Then, using this resist film 58 as a mask, aluminum-based alloy film 57 and nitrogen-containing aluminum-based alloy film 75 are partially removed by wet etching using the same etching solution. Thereafter, the resist film 58 is removed. As a result, as shown in FIG. 44, the reflective electrode 4 and the base electrode 71 are formed in the display pixel region. In the terminal region, a protective cap 74 composed of a base layer 72 and an upper layer 73 is formed.

  Next, a second photolithography process is performed to form a resist film 58 having a pattern as shown in FIG. The planar shape of the resist film 58 has substantially the same planar shape as that of the transmissive electrode 3 (see FIG. 46) and the terminal electrode 5 (see FIG. 46). Then, using the resist film 58 as a mask, the ITO film 59 is partially removed by wet etching. Here, as an etchant used for wet etching, an oxalic acid-based etchant can be used. Thereafter, the resist film 58 is removed. As a result, as shown in FIG. 46, the transmissive electrode 3 and the terminal electrode 5 can be obtained.

  Thereafter, as in Embodiment 1 of the method for manufacturing a liquid crystal display device according to the present invention, the liquid crystal display device shown in FIG. 32 can be obtained by performing a step of forming the alignment film 28a.

  In the manufacturing method of the liquid crystal display device described above, the three layers of the ITO film 59, the nitrogen-containing aluminum-based alloy film 75, and the aluminum-based alloy film 57 are continuously formed as shown in FIG. The number of processes such as evacuation of the reaction container for performing the film forming process and the cleaning process of the glass substrate 1 before performing the film forming process can be reduced as compared with the case where these films are formed separately (see FIG. In other words, evacuation, cleaning, and the like are sufficient once to form the above-described three types of films). Therefore, the number of manufacturing steps and processing time of the liquid crystal display device can be reduced. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  In addition, since the ITO film 59, the nitrogen-containing aluminum-based alloy film 75, and the aluminum-based alloy film 57 described above can be continuously performed in one film forming apparatus without exposing the glass substrate 1 to the outside air, the interface between these films. It is possible to reduce the possibility of contaminants such as impurities entering the device. Therefore, due to the presence of such contaminants, the electrical resistance value between the transmissive electrode 3 made of an ITO film (see FIG. 46) and the base electrode 71 (see FIG. 46), or the base electrode 71 and The possibility that the electrical resistance value of the connection portion between the reflective electrode 4 (see FIG. 46) increases can be reduced.

  The material constituting the base electrode 71 is a nitrogen-containing aluminum-based alloy film. This nitrogen-containing aluminum-based alloy is a material that can be etched with the same etching solution as the aluminum-based alloy constituting the reflective electrode 4. For this reason, the etching for forming the reflective electrode 4 and the base electrode 71 can be continuously performed using the same etching solution.

  Further, the nitrogen-containing aluminum-based alloy is a material capable of electrical conduction with both the aluminum-type alloy constituting the reflective electrode 4 and the ITO constituting the transmissive electrode 3. Therefore, it can be said that this nitrogen-containing aluminum-based alloy is a material suitable as a material constituting the base electrode 71. In addition, as a material constituting the above-described base electrode 71 (see FIG. 46), a refractory metal material such as a molybdenum-based alloy film or a chromium film may be used instead of the nitrogen-containing aluminum-based alloy film as described above. Good. In this case as well, electrical conduction between the base electrode 71 and the reflective electrode 4 and the transmissive electrode 3 can be achieved, and the same effect as when a nitrogen-containing aluminum-based alloy film is used as the material of the base electrode 71 can be obtained. Can be obtained.

  In addition, since the reflective electrode 4 and the base electrode 71 are formed to have the same planar shape (formed by a single etching process), a photolithography process and an etching process are performed to configure the reflective electrode 4. The number of manufacturing steps of the liquid crystal display device can be reduced as compared with the case where the photolithography process and the etching process are separately performed to perform the process and form the base electrode 71. 32, since the reflective electrode 4 or the protective cap 74 is left inside the contact holes 19a and 19c, as in the liquid crystal display device shown in FIG. 32, a photolithography process for forming the reflective electrode 4 is performed. It is possible to reduce the probability of the problem that the electrode 16c or the wiring 21 located at the bottom of the contact holes 19a and 19c is corroded by the developing solution used in, the etching solution used in the etching process for forming the reflective electrode 4, or the like.

  In addition, since the protective cap 74 is formed of the same layer as the reflective electrode 4 and the base electrode 71, the protective cap 74 can be formed at the same time in the process of forming the reflective electrode 4 and the base electrode 71. For this reason, in order to form the protective cap 74, the number of processes, such as a photoengraving process and an etching process, does not increase.

  Further, in order to form the pixel electrode and the terminal electrode, the liquid crystal display device manufacturing method described above only needs to carry out a total of two photoengraving steps, and for example, as a reference example shown in FIGS. The number of manufacturing steps can be reduced as compared with the case where the photolithography process is performed four times as in the method for manufacturing a liquid crystal display device. As a result, the manufacturing cost can be reduced as compared with the liquid crystal display device as a reference example.

(Embodiment 6)
47 to 51 are schematic cross-sectional views for explaining Embodiment 6 of the method for manufacturing a liquid crystal display device according to the present invention. 47 to 51, a sixth embodiment of the method for manufacturing a liquid crystal display device according to the present invention will be described. Note that the liquid crystal display device obtained by the method of manufacturing the liquid crystal display device shown in FIGS. 47 to 51 basically has the same structure as the liquid crystal display device shown in FIG.

  First, after carrying out the steps shown in FIGS. 2 to 6, an ITO film 59 and a silver-based alloy film 70 are continuously formed on the organic insulating film 18 by sputtering as shown in FIG. Here, the film thickness of the ITO film 59 can be about 100 nm, for example. The film thickness of the silver-based alloy film 70 can be set to, for example, about 150 nm.

  Next, as shown in FIG. 48, in the step of forming pixel electrodes and terminal electrodes, a resist film 58 having a pattern is formed on the silver-based alloy film 70 using the first photoengraving step. The resist film 58 has a planar shape substantially similar to the planar shape of the reflective electrode 4 and the protective cap 74.

  Then, using this resist film 58 as a mask, the silver-based alloy film 70 is partially removed by etching. Thereafter, the resist film 58 is removed. As a result, the reflective electrode 4 and the protective cap 74 can be formed as shown in FIG.

  Next, by performing the second photolithography process, a resist film 58 having a pattern is formed as shown in FIG. The resist film 58 has a planar shape substantially similar to the planar shape of the transmissive electrode 3 and the terminal electrode 5. Then, by using the resist film 58 as a mask, the ITO film 59 is partially removed, whereby the transmissive electrode 3 (see FIG. 51) and the terminal electrode 5 (see FIG. 51) can be obtained. Thereafter, the resist film 58 is removed. As a result, a structure as shown in FIG. 51 is obtained.

  In this manner, the pixel electrode (the transmissive electrode 3 and the reflective electrode 4) and the terminal electrode 5 in the transflective liquid crystal display device can be obtained by performing the photolithography process twice.

  Thereafter, in the same manner as in the manufacturing method of the first embodiment of the liquid crystal display device according to the present invention, the step of forming the alignment film 28a (see FIG. 38) and the like are carried out, whereby the liquid crystal display having the structure shown in FIG. A device can be obtained.

  In the manufacturing method of the liquid crystal display device described above, as shown in FIG. 47, the ITO film 59 and the silver-based alloy film 70 are continuously formed. Therefore, in order to form the ITO film 59 and the silver-based alloy film 70, What is necessary is just to perform vacuuming of the reaction container which performs a film-forming process, the cleaning process of the glass substrate 1 before a process, etc. once. In other words, the number of vacuuming steps, cleaning steps, and the like can be reduced as compared with the case where independent film forming steps are performed to form each of the two films described above. The number of processes can be reduced and the manufacturing period can be shortened. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  38, that is, a structure in which the entire screen of the reflective electrode 4 and a part of the upper surface of the transmissive electrode 3 are in contact (such as the reflective electrode 4 laminated on the transmissive electrode 3). Therefore, the laminated silver-based alloy film 70 and ITO film 59 can be etched in order as shown in FIGS.

  47, since the ITO film 59 and the silver-based alloy film 70 can be continuously formed, the two film forming processes described above are performed in the middle of the film forming process in one film forming apparatus. Thus, the glass substrate 1 is continuously exposed without being exposed to the outside air. Therefore, it is possible to reduce the possibility that impurities enter the interface between the ITO film 59 and the silver-based alloy film 70 from the outside. For this reason, it is possible to reduce the possibility that the contact resistance of the contact portion between the transmissive electrode 3 made of the ITO film and the reflective electrode 4 made of the silver-based alloy film 70 increases due to the presence of such impurities.

  Further, since the base electrode 20 is not formed under the reflective electrode 4 as in the liquid crystal display device shown in FIG. 1, it is not necessary to carry out an etching process for forming the base electrode. Further, as shown in FIG. 49, since the reflective electrode 4 or the protective cap 74 remains in the contact holes 19a and 19c, the etching solution used in the etching process for forming the reflective electrode 4 and the protective cap 74 is used. In addition, the possibility that the electrode 16c or the wiring 21 located under the contact holes 19a and 19c is corroded by the developer used in the photolithography process for forming the resist film 58 shown in FIG. Further, since the protective cap 74 is formed of the same layer as the reflective electrode 4, the protective cap 74 can be formed at the same time in the process of forming the reflective electrode 4.

(Embodiment 7)
52 to 56 are schematic cross-sectional views for explaining Embodiment 7 of the method for manufacturing a liquid crystal display device according to the present invention. With reference to FIGS. 52 to 56, a seventh embodiment of the method for manufacturing a liquid crystal display device according to the present invention will be described. The liquid crystal display device obtained by the manufacturing method shown in FIGS. 52 to 56 basically has the same structure as the liquid crystal display device shown in FIG. However, in the liquid crystal display device obtained by the manufacturing method shown in FIGS. 52 to 56, the material constituting the base electrode 71 (see FIG. 32) is a molybdenum (Mo) alloy film.

  In the seventh embodiment of the method for manufacturing a liquid crystal display device according to the present invention, the steps shown in FIGS. Thereafter, as shown in FIG. 52, an ITO film 59, a molybdenum-based alloy film 64, and an aluminum-based alloy film 57 are successively formed sequentially using a sputtering method. Here, the film thickness of the ITO film 59 can be about 100 nm, for example. The film thickness of the molybdenum-based alloy film 64 can be set to, for example, about 50 nm. The film thickness of the aluminum-based alloy film 57 can be set to, for example, about 150 nm.

  Next, as shown in FIG. 53, a resist film 80 is formed on the aluminum-based alloy film 57. Then, a predetermined region of the resist film 80 is exposed by irradiating the resist film 80 with exposure light through the mask 76 as indicated by an arrow 79. Here, the mask 76 includes a membrane 77 made of a material that transmits exposure light, and a light shielding body 78 that blocks the exposure light. The light shielding body 78 is formed on the membrane 77 so as to form a planar pattern corresponding to the planar shape of a region that is not desired to be exposed. Here, the light shielding body 78 is arranged so as to form the unexposed portion 82 on the resist film 80 on the region where the transmissive electrode 3 (see FIG. 32) and the terminal electrode 5 (see FIG. 32) are to be formed. .

  By this exposure process, an exposed portion 81 that is a region other than the unexposed portion 82 (that is, an exposed region) is formed in the resist film 80. The amount of exposure light used in this exposure step is about 1.4 times the amount of light that can completely expose the resist film 80 (that is, the amount of light that can completely remove the resist film 80 by performing development processing). Of the light amount).

  Next, as shown in FIG. 54, a second exposure process is performed on the resist film 80 using a mask 83 which is an exposure mask different from the mask 76 shown in FIG. In the mask 83, a light shielding body 84 having a pattern different from the light shielding body 78 in the mask 76 shown in FIG. 53 is formed on the membrane 77. The pattern (planar shape) of the light shielding body 84 is such that the exposure light does not strike the portion of the resist film 80 located on the region where the reflective electrode 4 (see FIG. 32) and the protective cap 74 (see FIG. 32) are to be formed. It has become a shape.

  By performing an exposure process using such a mask 83, a second exposure portion 85 is formed in the resist film 80. The exposure amount in the second exposure step is preferably about 0.7 times the exposure amount at which the resist film 80 can be completely removed by development processing. As a result, the second exposed portion 85 does not reach the bottom surface of the resist film 80 (the contact portion between the surface of the aluminum-based alloy film 57 and the resist film 80) in the depth direction of the resist film 80.

  Then, after the two exposure processes described above are completed, the resist film 80 is developed. As a result, as shown in FIG. 55, a resist film 58 having two portions with different thicknesses, a thick portion 86 and a thin portion 87, can be obtained. Then, using the resist film 58 as a mask, the aluminum-based alloy film 57, the molybdenum-based alloy film 64, and the ITO film 59 (see FIG. 54) are partially removed by etching. As a result, as shown in FIG. 55, the transmissive electrode 3 and the terminal electrode 5 can be formed, and the aluminum-based alloy film 57 and the molybdenum-based alloy film having the same planar shape as those of the transmissive electrode 3 and the terminal electrode 5 are formed. 64 can be obtained. In this etching, the aluminum-based alloy film 57 and the molybdenum-based alloy film 64 are continuously etched using the same etching solution by using an aqueous solution of phosphoric acid, nitric acid, and acetic acid as the etching solution. Can do.

  Next, a step of removing the thin portion 87 of the resist film 58 is performed. Specifically, ashing using oxygen plasma is performed for a time that is, for example, about 0.6 times the time during which the entire resist film 58 can be removed (that is, the time during which the entire thick portion 86 can be removed). As a result, as shown in FIG. 56, the thin portion 87 (see FIG. 55) of the resist film 58 is removed, and only the portion that was the thick portion 86 (see FIG. 54) remains.

  56, the aluminum-based alloy film 57 and the molybdenum-based alloy film 64 are continuously formed using the aqueous solution of phosphoric acid, nitric acid, and acetic acid again with the resist film 58 as a mask. Partial removal by etching. As a result, it is possible to form a protective cap 74 (see FIG. 32) including the reflective electrode 4 (see FIG. 32), the base electrode 71 (see FIG. 32), and the base layer 72 and the upper layer 73. The base electrode 71 and the base layer 72 are each composed of a molybdenum-based alloy film. Thereafter, the resist film 58 is removed.

  In this way, the pixel electrodes (the transmissive electrode 3, the reflective electrode 4 and the reflective electrode 4) in the transflective liquid crystal display device are obtained by a single photolithography process for forming the resist film 58 shown in FIGS. The base electrode 71 (see FIG. 32)) and the terminal electrode 5 (and the protective cap 74 (see FIG. 32)) can be formed.

  In the above-described method for manufacturing a liquid crystal display device, a resist film 58 (see FIG. 55) having a thick portion 86 and a thin portion 87 is formed, so that two exposure steps are performed as shown in FIGS. We are carrying out. In these two exposure steps, the exposure amount and the mask to be used are changed. However, as a method for forming such a resist film 58, another method may be used.

  For example, as a mask used for exposure, the exposure light transmittance is different between an area where the exposure light is almost completely shielded, an area where the exposure light is slightly transmitted, and an area where the exposure light is almost completely transmitted. A method of using a mask having two regions is also conceivable. The planar shape (pattern shape) of the above-described region where the exposure light is almost completely blocked is the resist located on the region where the reflective electrode 4 (see FIG. 32) and the protective cap 74 (see FIG. 32) are to be formed. You may make it respond | correspond to the planar shape of the thick part 86 of the film | membrane 58. FIG. Further, the planar shape of the region through which the exposure light can slightly pass as described above may correspond to the planar shape of the thin portion 87 of the resist film 58. Then, the planar shape of the region that transmits the exposure light almost completely may correspond to the planar shape of the portion where the resist film 58 is completely removed.

  Using such a mask, the exposure process is carried out with exposure light having such a light intensity that the resist film 80 (see FIG. 53) is completely exposed. Then, by performing development processing on the resist film after performing such an exposure step, a resist having two portions (thick portion 86 and thin portion 87) having different thicknesses as shown in FIG. A film 58 can be formed.

  In the above-described mask, a material that constitutes a region capable of transmitting a slight amount of exposure light may be a material that has a light transmittance that is not zero but is low to some extent. A hatching having a width equal to or smaller than the resolution of the exposure apparatus to be used may be formed in the region using a material capable of shielding light. Even if such a structure is used, the light transmittance can be reduced to some extent, although not zero.

  As shown in FIG. 32, a structure in which the entire lower surface of the base electrode 71 is in contact with the upper surface of the transmissive electrode 3 below the reflective electrode 4 (the base electrode 71 and the reflective electrode 4 are formed on a part of the transmissive electrode 3. A semi-transmission type liquid crystal display by a single photoengraving process by employing a resist film 58 having a different thickness in two stages as shown in FIG. The pixel electrode and terminal electrode of the device can be formed. Further, since the ITO film 59, the molybdenum-based alloy film 64, and the aluminum-based alloy film 57 are continuously formed, these layers are laminated as in the fifth embodiment of the liquid crystal display device manufacturing method according to the present invention. It is possible to reduce the possibility of foreign matter entering between the films.

  Further, since the three films described above are continuously formed, evacuation (pressure adjustment process) in the reaction vessel of the processing apparatus for performing the film forming process is compared with the case where each film is formed independently. ) And the cleaning process of the glass substrate 1 before the process is only once (that is, it is not necessary to perform the pressure adjustment process and the cleaning process for each of the three films). It is possible to reduce the number of manufacturing processes and the manufacturing period. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  Further, in the above-described method for manufacturing a liquid crystal display device, as in the fifth embodiment of the method for manufacturing a liquid crystal display device according to the present invention, the reflective electrode 4 and the protective cap 74 are formed on the contact holes 19a and 19c and remain. It becomes. Therefore, it is possible to reduce the risk that the electrode 16c or the wiring 21 located under the contact holes 19a and 19c is corroded by the etching solution or the developing solution used for forming the reflective electrode 4 and the protective cap 74.

  In the manufacturing method shown in FIGS. 52 to 56, since the development process is performed only once, the probability of occurrence of damage such as corrosion by the developer with respect to the wiring 21 or the like is determined according to the method for manufacturing the liquid crystal display device according to the present invention. It is further lower than the form 5. That is, it is considered that the etching liquid used in the etching is the main factor causing damage to the wiring 21 and the like. For this reason, when the manufacturing method shown in FIGS. 52 to 56 is adopted, it is considered that a configuration in which the protective cap 74 is relatively omitted is easily adopted.

  In addition, a molybdenum alloy film 64 is used as a material constituting the base electrode 71 (see FIG. 32). The molybdenum alloy film 64 is made of the same etching solution as the aluminum alloy film 57 as described above. Etching is possible. For this reason, the etching process of the aluminum-based alloy film 57 and the molybdenum-based alloy film 64 shown in FIGS. 55 and 56 can be continuously performed by using one etching solution.

  In the above description, the case where the molybdenum-based alloy film 64 is used as the material constituting the base electrode 71 is shown, but a high melting point such as a nitrogen-containing aluminum-based alloy film or a chromium film is used instead of the molybdenum-based alloy film 64. A film made of a metal material may be used. In this case, the same effect can be obtained.

(Embodiment 8)
57 to 60 are schematic cross-sectional views for explaining Embodiment 8 of the method for manufacturing a liquid crystal display device according to the present invention. With reference to FIGS. 57 to 60, an eighth embodiment of the method for manufacturing a liquid crystal display device according to the present invention will be described. The liquid crystal display device obtained by the manufacturing method shown in FIGS. 57 to 60 basically has the same structure as the liquid crystal display device shown in FIG.

  First, the steps shown in FIGS. 2 to 6 and the step shown in FIG. 47 are performed. Thereafter, a resist film 80 (see FIG. 57) is formed on the silver-based alloy film 70. Then, the first exposure step is performed in the same manner as the step shown in FIG. As a result, as shown in FIG. 57, in the resist film 80, an unexposed portion 82 is formed in a portion located on the reflective electrode 4 (see FIG. 38) and the terminal electrode 5 (see FIG. 38). A first exposure portion 81 is formed in a portion other than.

  Next, a second exposure process similar to the exposure process shown in FIG. 54 is performed. As a result, a second exposure portion 85 is formed in the resist film 80 as shown in FIG. This second exposure portion 85 does not reach the surface of the silver-based alloy film 70 because the exposure amount is not sufficient.

  Thereafter, the resist film 80 is developed to obtain a resist film 58 having a thick portion 86 and a thin portion 87 as shown in FIG. Using this resist film 58 as a mask, silver-based alloy film 70 and ITO film 59 (see FIG. 58) are partially removed by etching. As a result, a structure as shown in FIG. 59 is obtained. Through this step, the transmissive electrode 3 and the terminal electrode 5 are formed.

  And the process of removing the thin part 87 of the resist film 58 is implemented like Embodiment 7 of the manufacturing method of the liquid crystal display device by this invention. As a result, as shown in FIG. 60, it is possible to obtain a structure in which the resist film 58 remains only in the portion where the thick portion 86 (see FIG. 59) is located. Using this resist film 58 as a mask, the silver-based alloy film 70 is partially removed by etching. Thereafter, the resist film 58 is removed. As a result, the reflective electrode 4 (see FIG. 38) and the protective cap 74 (see FIG. 38) can be obtained.

  Thereafter, a liquid crystal display device having a structure as shown in FIG. 38 can be obtained by performing a process for forming the alignment film 28a (see FIG. 38).

  In this case, the same effect as that of the seventh embodiment of the method for manufacturing the liquid crystal display device according to the present invention can be obtained.

(Embodiment 9)
61 to 65 are schematic cross-sectional views for explaining Embodiment 9 of the method for manufacturing a liquid crystal display device according to the present invention. With reference to FIGS. 61 to 65, a ninth embodiment of the method for manufacturing a liquid crystal display device according to the present invention will be described. The liquid crystal display device obtained by the manufacturing method shown in FIGS. 61 to 65 basically has the same structure as the liquid crystal display device shown in FIG.

  First, after performing the steps shown in FIGS. 2 to 6, as shown in FIG. 61, the ITO film 59, the molybdenum alloy film 64, the aluminum alloy film 57, and the molybdenum alloy film 88 are formed on the organic insulating film 18. Are successively formed using a sputtering method. Here, the film thickness of the ITO film 59 can be about 100 nm, for example, and the film thickness of the molybdenum-based alloy film 64 can be about 50 nm, for example. The film thickness of the aluminum-based alloy film 57 can be set to, for example, about 150 nm. The film thickness of the uppermost molybdenum-based alloy film 88 can be set to, for example, about 20 nm.

  Next, by performing the first photolithography process in the process of forming the pixel electrode and the terminal electrode, a resist film 58 having a pattern as shown in FIG. 62 is formed. The resist film 58 is formed to have substantially the same planar shape as that of the reflective electrode 4 (see FIG. 63) and the protective cap 74 (see FIG. 63).

  Then, using this resist film 58 as a mask, molybdenum alloy film 88, aluminum alloy film 57, and lower molybdenum alloy film 64 are partially removed by etching. Thereafter, the resist film 58 is removed. Here, since the aluminum-based alloy film 57 and the molybdenum-based alloy films 88 and 64 can be etched with the same etchant, they can be continuously etched. As a result, a structure as shown in FIG. 63 is obtained.

  As can be seen from FIG. 63, the base electrode 63a and the reflective electrode 4 are formed in the pixel display region by this etching. In the terminal region, a base layer 69 made of a molybdenum-based alloy film and a protective cap 74 made of an upper layer 73 are formed. A cover film 45 made of a molybdenum-based alloy film 88 (see FIG. 62) is formed on the reflective electrode 4 and the protective cap 74, respectively.

  Next, by performing the second photolithography process, a resist film 58 having a pattern is formed as shown in FIG. The resist film 58 is formed to have a planar shape similar to that of the transmissive electrode 3 (see FIG. 65) and the terminal electrode 5 (see FIG. 65). Then, using this resist film 58 as a mask, the ITO film 59 (see FIG. 64) is partially removed by etching. As a result, the transmissive electrode 3 and the terminal electrode 5 can be formed. In this etching, an oxalic acid-based etching solution can be used. Thereafter, the cover film 45 is removed. In this way, a structure as shown in FIG. 65 is obtained.

  Thereafter, a liquid crystal display device as shown in FIG. 32 can be obtained by performing a process of forming the alignment film 28a (see FIG. 32).

  As described above, when the development process for forming the resist film 58 shown in FIG. 62 is performed, the molybdenum-based alloy film 88 as the cover metal film is formed so as to cover the surface of the aluminum-based alloy film 57. It is in a state. Here, a brief description will be given of problems that may occur when the molybdenum-based alloy film 88 does not exist during the development processing described above. That is, when the molybdenum-based alloy film 88 is not present, the surface of the aluminum-based alloy film 57 is in direct contact with the developer at the portion where the resist film 58 shown in FIG. 62 does not remain. At this time, if there is a portion where the ITO film is in contact with the developer at the same time, when a general alkaline developer is used as the developer, the ITO film is caused by hydrogen gas generated by ionization. There is a possibility of reducing corrosion.

  Even when the molybdenum-based alloy film 88 as the cover metal film does not exist, the ITO film 59 is covered with the molybdenum-based alloy film 64 and the aluminum-based alloy film 57. It is usually difficult to imagine when touching. However, if a defect such as a pinhole is present in a part of the molybdenum-based alloy film 64 and the aluminum-based alloy film 57 described above, the ITO film 59 and the developer may come into contact with each other in the portion where the defect exists. In this case, the ITO film 59 can be corroded as described above.

  Note that the probability of occurrence of defects such as pinholes as described above has been lowered due to countermeasures such as accurate dust management in the processing apparatus. Further, a developer having an additive such as an oxidant has been developed to reduce the risk of reductive corrosion. Furthermore, even if the molybdenum-based alloy film 88 as the cover metal film is not used due to measures such as increasing the exposure amount at the time of exposure and reducing the over time of the development time as much as possible, the above ITO It is possible to reduce the probability of occurrence of corrosion of the film 59.

  However, by forming the molybdenum alloy film 88 as the cover metal film as in the present invention, if the developing process is performed in a state where the developer and the aluminum alloy film 57 are not in direct contact with each other, the ionizing action is theoretically achieved. Since it cannot occur, the possibility of corrosion of the ITO film 59 can be extremely reduced. Therefore, it is not necessary to manage the accuracy of dust management in the processing apparatus as described above under such severe conditions.

  Note that the method using the molybdenum-based alloy film 88 (cover metal film) as described above can achieve the same effect regardless of whether it is applied to any of Embodiments 1 to 8 of the present invention. Can do. In the above description, the molybdenum-based alloy film 88 is used as the cover metal film. However, as the cover metal film, a metal film containing a refractory metal as a main component or aluminum containing nitrogen as a main component. A metal film or the like can be used. In this case, the same effect can be obtained.

  Further, in the step of removing the cover metal film, dry etching may be used as a method, but depending on the material of the cover metal film, the reflective electrode 4 made of an aluminum-based metal film and the transmissive electrode 3 made of an ITO film are selectively used. If etching is possible, wet etching may be used. However, when wet etching is performed, it is more preferable to form the protective cap 74 because the time during which the terminal electrode 5 in the terminal region is exposed to etching tends to increase.

  To summarize the characteristic configuration of the liquid crystal display device shown in FIG. 1 as an example of the liquid crystal display device according to the present invention, the liquid crystal display device includes a glass substrate 1 as a substrate, a transmissive electrode 3, and a base. A base electrode 20 as a conductor film, a reflective electrode 4, a terminal electrode 5, a base wiring 41, and an upper layer wiring 42 are provided. The transmissive electrode 3 is formed on the glass substrate 1. The transmissive electrode 3 may be made of any material as long as it is a transparent or translucent conductor that can transmit visible light. The reflective electrode 4 may be made of any material as long as it is a conductor that can reflect visible light. The transmissive electrode 3 is for forming an electric field for driving the liquid crystal 27. The base electrode 20 overlaps the end 44 a that is a part of the transmissive electrode 3 on the glass substrate 1. The base electrode 20 may include a portion located in a region that does not overlap the transmissive electrode 3 on the glass substrate 1, and may be in contact with an end 44 a that is a part of the transmissive electrode 3 (electrical May be connected). The reflective electrode 4 is formed so as to be in contact with the base electrode 20. The reflective electrode 4 has a planar shape that is substantially the same as the planar shape of the base electrode 20. The reflective electrode 4 may be for forming an electric field that drives the liquid crystal 27. The terminal electrode 5 is formed on the glass substrate 1 and is composed of the same layer as the transmissive electrode 3. The base wiring 41 overlaps with a part of the terminal electrode 5 (end portion 44 b) on the glass substrate 1 and is configured by the same layer as the base electrode 20. The underlying wiring 41 may be in contact with and electrically connected to a part of the terminal electrode 5. The upper layer wiring 42 is formed on the base wiring 41. The upper layer wiring 42 is configured by the same layer as the reflective electrode 4.

  In this way, since the base electrode 20 can be connected in contact with both the transmissive electrode 3 and the reflective electrode 4, charges can be supplied to the transmissive electrode 3 and the reflective electrode 4 through the base electrode 20. .

  Further, since the base electrode 20 overlaps part of the transmissive electrode 3 (end portion 44 a), the transmissive electrode 3 is formed on the upper surface of the base electrode 20 as in the case where the transmissive electrode 3 is overlaid on the base electrode 20. It is not necessary to secure a region where the portions overlap and contact (that is, a region where the reflective electrode 4 is not in contact with the base electrode 20 or a region where the reflective electrode 4 is not formed on the base electrode 20). For this reason, the planar shape of the reflective electrode 4 and the planar shape of the base electrode 20 can be made the same. Therefore, in the process of forming the reflective electrode 4 and the base electrode 20, the reflective electrode 4 and the base are formed by one continuous processing process (etching process) using the same mask film (for example, the resist film 58 (see FIG. 11)). Electrode 20 can be formed. For this reason, the number of manufacturing steps of the liquid crystal display device can be reduced and the manufacturing period of the liquid crystal display device can be shortened as compared with the case where the reflective electrode 4 and the base electrode 20 are formed by separate steps. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  In addition, since the terminal electrode 5, the base wiring 41 and the upper layer wiring 42 are configured by the same layer as the transmissive electrode 3, the base electrode 20 and the reflective electrode 4, respectively, the terminal electrode 5 and the like are simultaneously formed in the formation process of the transmissive electrode 3 and the like. Can be formed. That is, the number of manufacturing steps can be prevented from increasing in order to form the terminal electrode 5 and the like. Therefore, an increase in manufacturing cost due to the formation of the terminal electrode 5 and the like can be avoided.

  In the liquid crystal display device, the base electrode 20 is electrically connected to both the transmissive electrode 3 and the reflective electrode 4. The material constituting the base electrode 20 is a material that can be electrically connected to the material constituting the transmissive electrode 3 and the reflective electrode 4.

  Further, to summarize the characteristic configuration of the liquid crystal display device shown in FIG. 32 which is an example of the liquid crystal display device according to the present invention, the liquid crystal display device includes a glass substrate 1 as a substrate, a transmissive electrode 3, A base electrode 71 as a base conductor film, a reflective electrode 4, and a terminal electrode 5 are provided. The transmissive electrode 3 is formed on the glass substrate 1. The transmissive electrode 3 may be for forming an electric field for driving the liquid crystal 27. The base electrode 71 overlaps a part of the transmissive electrode 3, and the entire lower surface (the transmissive electrode 3 side) is in contact with the transmissive electrode 3. The reflective electrode 4 is formed on the base electrode 71. The reflective electrode 4 may be electrically connected by contacting the base electrode 71. The reflective electrode 4 has substantially the same planar shape as the planar shape of the base electrode 71. The reflective electrode 4 may be for forming an electric field for driving the liquid crystal 27. The terminal electrode 5 is formed on the glass substrate 1 and is composed of the same layer as the transmissive electrode 3.

  In this way, even if the transmissive electrode 3 and the reflective electrode 4 are made of a material (for example, ITO and an aluminum alloy) that cannot be brought into direct contact with each other for electrical conduction, the base electrode 71 is provided. By appropriately selecting the material, the charge can be supplied from the transmissive electrode 3 to the reflective electrode 4 through the base electrode 71. For example, it is conceivable to select a nitrogen-containing aluminum alloy that can conduct both ITO and an aluminum alloy as the material of the base electrode 71.

  In addition, since the entire surface of the base electrode 71 on the side of the transmissive electrode 3 is in contact with the transmissive electrode 3, only a part of the surface (lower surface) of the base electrode 71 is in contact with the transmissive electrode 3. The area of the contact portion between the transmissive electrode 3 and the base electrode 71 can be increased. For this reason, the electrical connection resistance value of the contact part of the transmissive electrode 3 and the base electrode 71 can be made small.

  Further, since the planar shape of the reflective electrode 4 and the planar shape of the base electrode 71 are substantially the same, in the step of forming the reflective electrode 4 and the base electrode 71, the same mask film (resist film 58 (see FIG. 36)). ), The reflective electrode 4 and the base electrode 71 can be formed by one continuous processing step (etching step). For this reason, the number of manufacturing steps of the liquid crystal display device can be reduced and the manufacturing period of the liquid crystal display device can be shortened as compared with the case where the reflective electrode 4 and the base electrode 71 are formed by separate steps. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  Further, since the terminal electrode 5 is configured by the same layer as the transmissive electrode 3, the terminal electrode 5 can be formed at the same time in the process of forming the transmissive electrode 3. That is, it is possible to prevent an increase in the number of manufacturing steps for forming the terminal electrode 5. Therefore, an increase in manufacturing cost caused by forming the terminal electrode 5 can be avoided.

  The liquid crystal display device may include an organic insulating film 18 and an insulating film 17 as base films positioned under the terminal electrodes 5 on the glass substrate 1 and wirings 21 positioned under the insulating film 17. Good. A contact hole 19 c as an opening that exposes at least a part of the surface of the wiring 21 may be formed in the base film (the organic insulating film 18 and the insulating film 17). The terminal electrode 5 extends to the inside of the opening (contact hole 19c) of the base film, and is electrically connected to the wiring 21 inside the opening (contact hole 19c) (with the surface of the wiring 21). It may be formed so as to contact. The liquid crystal display device may further include a protective cap 74 including a base layer 72 and an upper layer 73. The underlayer 72 may be formed on the terminal electrode 5 in a region located on the contact hole 19c. The foundation layer 72 may be formed of the same layer as the foundation electrode 71. The upper layer 73 may be formed on the base layer 72 and may be configured of the same layer as the reflective electrode 4.

  In this case, the terminal electrode 5 is formed inside the opening (contact hole 19c) of the base film (the organic insulating film 18 and the insulating film 17), and a protective cap comprising the base layer 72 and the upper layer 73 on the contact hole 19c. 74 is formed, the terminal electrode 5 and the protective member are used as protective members for preventing chemicals (such as an etchant and a developer) used in the step of forming the terminal electrode 5 and the like from entering the contact hole 19c. The cap 74 acts. For this reason, the probability of occurrence of a problem that the wiring 21 corrodes inside the contact hole 19c due to the chemical solution can be reduced.

  In addition, since the base layer 72 and the upper layer 73 are composed of the same layer as the base electrode 71 and the reflective electrode 4, respectively, the base layer 72 and the upper layer 73 are simultaneously formed in the step of forming the base electrode 71 and the reflective electrode 4. Can be formed. Therefore, it is possible to avoid an increase in the number of manufacturing steps for forming the base layer 72 and the upper layer 73.

  In the liquid crystal display device, the reflective electrode 4 may include at least one of a metal containing aluminum as a main component and a metal containing silver as a main component. The base electrodes 20 and 71 may include at least one of a metal mainly composed of a refractory metal and a metal mainly composed of aluminum containing nitrogen. The transmissive electrode 3 may contain tin-added indium oxide (ITO).

  The metal containing aluminum as a main component includes aluminum (Al) and an alloy containing aluminum as a main component and containing other components (aluminum alloy). The metal containing silver as a main component includes silver (Ag) and an alloy containing silver as a main component and containing other components (silver-based alloy). Further, the metal having a refractory metal as a main component includes a refractory metal (for example, chromium, molybdenum, tantalum, tungsten, etc.) and an alloy containing the refractory metal as a main component and other components. Moreover, the metal which has aluminum which contains nitrogen as a main component includes the alloy (nitrogen-containing aluminum-type alloy) which contains aluminum containing nitrogen and aluminum which contains nitrogen as a main component, and another component.

  In this case, the material constituting the base electrodes 20 and 71 described above is a material capable of achieving electrical continuity with the material constituting the reflective electrode 4 and the material constituting the transmissive electrode 3. Accordingly, the charges can be reliably supplied from the base electrodes 20 and 71 to the reflective electrode 4 and the transmissive electrode 3, or the charges can be reliably supplied from the transmissive electrode 3 to the reflective electrode 4 through the base electrode 71.

  Aluminum or silver is suitable as a material for the reflective electrode 4 because of its high light reflectance. Moreover, since tin-added indium oxide is a transparent conductive material, it is suitable as a material for the transmissive electrode 3 that transmits light. Since aluminum containing refractory metal such as chromium or molybdenum and nitrogen is electrically connectable with the above-described aluminum, silver, and tin-added indium oxide, it is suitable as a material for the base electrodes 20 and 71. Yes.

  In the liquid crystal display device, the material constituting the reflective electrode 4 and the material constituting the base electrodes 20 and 71 may be determined so that etching can be performed using the same etching solution.

  In this case, the film including the portion to be the reflective electrode 4 and the film including the portions to be the base electrodes 20 and 71 are continuously etched using the same etching solution, so that the reflective electrode 4 and the base electrode are processed. 20 and 71 can be formed by one etching process. For this reason, the number of manufacturing steps of the liquid crystal display device can be reduced.

  To summarize the characteristic configuration of the liquid crystal display device shown in FIG. 28 as an example of the liquid crystal display device according to the present invention, the liquid crystal display device includes a glass substrate 1, a transmissive electrode 3, and a reflective electrode as a substrate. 4. The transmissive electrode 3 is formed on the glass substrate 1. The transmissive electrode 3 may be for forming an electric field for driving the liquid crystal. The transmissive electrode 3 contains tin-added indium oxide (ITO). The reflective electrode 4 includes a portion located in a region that does not overlap with the transmissive electrode 3 on the glass substrate 1, and is formed so as to overlap with a part (end portion 44 a) of the transmissive electrode 3. The reflective electrode 4 may be electrically connected to the transmissive electrode 3 by contacting a part of the transmissive electrode 3. The reflective electrode 4 may be for forming an electric field for driving the liquid crystal 27. The reflective electrode 4 contains a metal containing silver as a main component (for example, silver or a silver-based alloy).

  In this way, since silver can form a good electrical connection with tin-doped indium oxide (ITO), the reflective electrode 4 directly passes to the transmissive electrode 3 without using the base electrode 20 (see FIG. 1). Charge can be supplied. For this reason, the number of manufacturing steps of the liquid crystal display device can be further reduced as compared with the case where the base electrode 20 is formed. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  Silver is suitable as a material for the reflective electrode 4 because of its high light reflectance. Moreover, since tin-added indium oxide is a transparent conductive material, it is suitable as a material for the transmissive electrode 3 that transmits light.

  The liquid crystal display device is formed on the glass substrate 1 and overlaps with a terminal electrode 5 composed of the same layer as the transmissive electrode 3 and a part of the terminal electrode 5 (end portion 44b) on the glass substrate 1. The reflective electrode 4 and a connection wiring 43 formed of the same layer may be provided. The connection wiring 43 may be electrically connected to the terminal electrode 5 by contacting a part of the terminal electrode 5.

  In this case, since the terminal electrode 5 and the connection wiring 43 are configured by the same layer as the transmissive electrode 3 and the reflective electrode 4, respectively, the terminal electrode 5 can be formed at the same time in the formation process of the transmissive electrode 3, and the reflective electrode 4 is formed. In the process, the connection wiring 43 can be formed simultaneously. That is, the number of manufacturing steps can be prevented from increasing because the terminal electrode 5 and the connection wiring 43 are formed. Therefore, an increase in manufacturing cost due to the formation of the terminal electrode 5 and the like can be avoided.

  To summarize the characteristic configuration of the liquid crystal display device shown in FIG. 38 as an example of the liquid crystal display device according to the present invention, the liquid crystal display device includes a glass substrate 1, a transmissive electrode 3, and a reflective electrode as a substrate. 4. The transmissive electrode 3 is formed on the glass substrate 1. The transmissive electrode 3 may be for forming an electric field for driving the liquid crystal 27. The transmissive electrode 3 contains tin-added indium oxide. The reflective electrode 4 is formed so as to overlap a part of the transmissive electrode 3 so that the entire lower surface (the entire lower surface) is in contact with the transmissive electrode 3. The reflective electrode 4 may be for forming an electric field for driving the liquid crystal 27. The reflective electrode 4 contains a metal whose main component is silver.

  In this way, since silver can form a good electrical connection with tin-doped indium oxide (ITO), the reflective electrode 4 directly passes to the transmissive electrode 3 without using the base electrode 71 (see FIG. 32). Charge can be supplied. For this reason, the number of manufacturing steps of the liquid crystal display device can be further reduced as compared with the case where the base electrode 71 is formed. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  Further, since the entire surface of the reflective electrode 4 on the transmissive electrode 3 side (the entire lower surface of the reflective electrode 4) is in contact with the transmissive electrode 3, only a part of the surface (lower surface) of the reflective electrode 4 is transmitted. The area of the contact portion between the transmissive electrode 3 and the reflective electrode 4 can be made larger than when the electrode 3 is in contact. For this reason, the electrical connection resistance value of the contact part of the transmissive electrode 3 and the reflective electrode 4 can be made small.

  The liquid crystal display device includes a terminal electrode 5 formed on the glass substrate 1 and formed of the same layer as the transmissive electrode 3.

  In this case, since the terminal electrode 5 is configured by the same layer as the transmissive electrode 3, the terminal electrode 5 can be formed at the same time in the process of forming the transmissive electrode 3. That is, it is possible to prevent an increase in the number of manufacturing steps for forming the terminal electrode 5. Therefore, an increase in manufacturing cost caused by forming the terminal electrode 5 can be avoided.

  As shown in FIG. 38, the liquid crystal display device includes a base film (organic insulating film 18 and insulating film 17) positioned below the terminal electrode 5 on the glass substrate 1, and wiring 21 positioned below the base film. May be provided. A contact hole 19 c as an opening that exposes at least a part of the surface of the wiring 21 may be formed in the base film (the organic insulating film 18 and the insulating film 17). The terminal electrode 5 extends to the inside of the contact hole 19c of the base film, and is formed so as to be electrically connected (for example, in contact) with the surface of the wiring 21 inside the contact hole 19c. Also good. Further, the liquid crystal display device may include a protective cap 74 formed on the terminal electrode 5 in a region located on the contact hole 19 c and configured by the same layer as the reflective electrode 4.

  In this case, since the terminal electrode 5 is formed in the contact hole 19c of the base film, and the protective cap 74 is formed on the contact hole 19c, a chemical solution (etching solution) used in the step of forming the terminal electrode 5 is formed. The protective cap 74 acts as a protective member that prevents the developer or the like from entering the contact hole 19c. For this reason, the probability of occurrence of a problem that the wiring 21 corrodes inside the contact hole 19c due to the chemical solution can be reduced.

  Further, since the protective cap 74 is formed of the same layer as the reflective electrode 4, the protective cap 74 can be formed at the same time in the process of forming the reflective electrode 4. Therefore, an increase in the number of manufacturing steps for forming the protective cap 74 can be avoided.

  To summarize the characteristic configuration of the manufacturing method of the liquid crystal display device shown in FIGS. 2 to 15 as an example of the manufacturing method of the liquid crystal display device according to the present invention, the manufacturing method of the liquid crystal display device includes the following steps. Is provided. First, the process of preparing the glass substrate 1 as shown in FIG. 2 is implemented. And the process (refer FIG. 7) of forming the ITO film | membrane 59 as a permeable film on the glass substrate 1 is implemented. The transmissive film may be made of other materials as long as it is a film made of a transparent or translucent conductor that can transmit visible light. The ITO film 59 is a film including a portion to be the transmissive electrode 3 (see FIG. 1). 8 and 9, the ITO film 59 is partially removed by etching to form the transmissive electrode 3 and the terminal electrode 5 composed of the same layer as the transmissive electrode 3. Perform the machining process. As shown in FIG. 10, it extends on the glass substrate 1 on which the transmissive electrode 3 and the terminal electrode 5 are formed (from the transmissive electrode 3 to the terminal electrode 5 through a region other than the region where the transmissive electrode 3 is located). Thus, a step of forming a chromium film 56 as a lower conductor film is performed. The chromium film 56 is a film including a portion to be the base electrode 20 and the base wiring 41 (see FIG. 1) as the base conductor film. A step of forming an aluminum-based alloy film 57 as a conductor film on the chromium film 56 is performed. The aluminum-based alloy film 57 is a film that includes portions that are to become the reflective electrode 4 and the upper layer wiring 42. As shown in FIGS. 11 and 12, the conductive film (aluminum alloy film 57) and the lower conductive film (chrome film 56) are partially removed by continuous etching, so that one of the transmissive electrodes 3 is obtained. The underlying conductor film (underlying electrode 20) that overlaps the portion (end portion 44a), the reflective electrode 4 positioned on the underlying conductor film, and the underlying wiring 41 that overlaps part of the terminal electrode 5 (end portion 44b) Then, a processing step for forming the upper layer wiring 42 located on the base wiring 41 is performed. The base wiring 41 and the upper layer wiring 42 constitute a connection wiring 43 that connects the wiring 21 and the terminal electrode 5. The base conductor film (base electrode 20) includes a portion located in a region that does not overlap with the transmissive electrode 3, and the base conductor film is electrically connected by being in contact with a part of the transmissive electrode 3. The The base wiring 41 includes a portion located in a region that does not overlap the terminal electrode 5. Further, the base wiring 41 is electrically connected by contacting a part of the terminal electrode 5.

  In this way, the liquid crystal display device according to the present invention as shown in FIG. 1 can be easily obtained. Also, by continuously etching the conductor film (aluminum-based alloy film 57) and the lower conductor film (chrome film 56), the base wiring 41 connected to the base electrode 20, the reflective electrode 4, and the terminal electrode 5 and Since the upper layer wiring 42 can be formed by a single etching process, the number of manufacturing processes of the liquid crystal display device can be reduced as compared with the case where the above-described base electrode 20 and the like are formed by individual etching processes.

  If the characteristic structure of the manufacturing method of the liquid crystal display device according to this invention is summarized, the manufacturing method of the liquid crystal display device shown in FIGS. 29 to 31 includes the following steps. First, as shown in FIG. 2, the process of preparing the glass substrate 1 as a board | substrate is implemented. As shown in FIG. 7, a step of forming a transmission film (ITO film 59) on the glass substrate 1 is performed. The transmissive film (ITO film 59) is a film including a portion to be the transmissive electrode 3. As shown in FIGS. 8 and 9, the transmissive film (ITO film 59) is partially removed by etching to form the transmissive electrode 3 and the terminal electrode 5 composed of the same layer as the transmissive electrode 3. A permeable membrane processing step is performed. As shown in FIG. 29, it extends on the glass substrate 1 on which the transmissive electrode 3 and the terminal electrode 5 are formed (from the transmissive electrode 3 to the terminal electrode 5 through a region other than the region where the transmissive electrode 3 is located). Thus, a step of forming a conductor film (silver-based alloy film 70) is performed. The conductor film (silver-based alloy film 70) is a film including a portion that should become the reflective electrode 4 (see FIG. 28) and the connection wiring 43. As shown in FIGS. 30 and 31, by partially removing the conductor film (silver-based alloy film 70) by etching, the reflective electrode 4 overlapping on a part (end portion 44a) of the transmissive electrode 3, A processing step of forming a connection wiring 43 overlapping on a part (end portion 44b) of the terminal electrode 5 is performed. The reflective electrode 4 includes a portion located in a region that does not overlap the transmissive electrode 3 and is electrically connected to the transmissive electrode 3 by being in contact with a part of the transmissive electrode 3. The connection wiring 43 includes a portion located in a region that does not overlap with the terminal electrode 5, and is electrically connected to the terminal electrode 5 by being in contact with a part of the terminal electrode 5.

  In this way, the liquid crystal display device according to the present invention shown in FIG. 28 can be easily obtained. In addition, since the reflective electrode 4 and the connection wiring 43 can be formed by etching the silver-based alloy film 70 as the conductor film, the reflective electrode 4 and the connection wiring 43 described above are formed by separate etching processes. Thus, the number of manufacturing steps of the liquid crystal display device can be reduced.

  If the characteristic structure of the manufacturing method of the liquid crystal display device according to this invention is summarized, the manufacturing method of the liquid crystal display device shown in FIGS. 33 to 37 includes the following steps. First, as shown in FIG. 2, a step of preparing a glass substrate 1 as a substrate is performed. As shown in FIG. 7, a step of forming a transmission film (ITO film 59) on the glass substrate 1 is performed. The transmissive film (ITO film 59) is a film including a portion to be the transmissive electrode 3. As shown in FIGS. 33 and 34, by partially removing the transmissive film (ITO film 59) by etching, the transmissive electrode 3 (see FIG. 32) and a terminal electrode composed of the same layer as the transmissive electrode 3 are obtained. 5 (see FIG. 32) is performed. As shown in FIG. 35, on the substrate on which the transmissive electrode 3 and the terminal electrode 5 are formed (so as to extend from the transmissive electrode 3 to the terminal electrode 5), the lower conductor film (nitrogen-containing aluminum-based alloy) A step of forming a film 75) is performed. The lower conductor film (nitrogen-containing aluminum-based alloy film 75) is a film including a base conductor film (base electrode 71 (see FIG. 32)) and a portion to be the base layer 72. Further, as shown in FIG. 35, a step of forming a conductor film (aluminum alloy film 57) on the lower conductor film (nitrogen-containing aluminum alloy film 75) is performed. The conductor film (aluminum-based alloy film 57) is a film including the reflective electrode 4 and a portion to be the upper layer 73. As shown in FIGS. 36 and 37, the conductor film (aluminum-based alloy film 57) and the lower conductor film (nitrogen-containing aluminum-based alloy film 75) are partially removed by continuous etching, whereby transmission is achieved. A base conductor film (base electrode 71) in which the entire surface on the lower side (transmission electrode 3 side) is in contact with the transmission electrode 3 and overlaps with a part of the electrode 3, and the reflective electrode 4 positioned on the base electrode 71; A processing step of forming a base layer 72 overlapping a part of the terminal electrode 5 and an upper layer 73 positioned on the base layer 72 is performed. The underlayer 72 is in contact with part of the terminal electrode 5.

  In this way, the liquid crystal display device shown in FIG. 32 can be easily obtained. Further, the conductor film (aluminum-based alloy film 57) and the lower conductor film (nitrogen-containing aluminum-based alloy film 75) are continuously etched so that the bottom electrode 71, the reflective electrode 4, and the terminal electrode 5 are located below. Since the base layer 72 and the upper layer 73 can be formed, the number of manufacturing steps of the liquid crystal display device can be reduced as compared with the case where the above-described base electrode 71 and the like are formed by individual etching processes.

  If the characteristic structure of the manufacturing method of the liquid crystal display device according to this invention is summarized, the manufacturing method of the liquid crystal display device shown in FIGS. 39 to 41 includes the following steps. First, as shown in FIG. 2, the process of preparing the glass substrate 1 as a board | substrate is implemented. As shown in FIG. 7, a step of forming a transmission film (ITO film 59) on the glass substrate 1 is performed. The transmissive film (ITO film 59) is a film including a portion to be the transmissive electrode 3. As shown in FIGS. 33 and 34, the transmissive film (ITO film 59) is partially removed by etching to form the transmissive electrode 3 and the terminal electrode 5 composed of the same layer as the transmissive electrode 3. A permeable membrane processing step is performed. As shown in FIG. 39, on the glass substrate 1 on which the transmissive electrode 3 and the terminal electrode 5 are formed (so as to extend from the transmissive electrode 3 to the terminal electrode 5), a conductor film (silver-based alloy film) 70) is carried out. The conductor film (silver-based alloy film 70) is a film including portions that are to become the reflective electrode 4 and the protective cap 74. As shown in FIG. 40 and FIG. 41, the conductor film (silver-based alloy film 70) is partially removed by etching, so that it overlaps with a part of the transmissive electrode 3 and the lower side (the transmissive electrode 3 side). A processing step of forming a reflective electrode 4 whose entire surface is in contact with the transmissive electrode 3 and a protective cap 74 that overlaps a part of the terminal electrode 5 is performed. The protective cap 74 is in contact with a part of the terminal electrode 5.

  In this way, the liquid crystal display device shown in FIG. 38 can be easily obtained. In addition, since the reflective electrode 4 and the protective cap 74 can be formed by etching the conductor film (silver-based alloy film 70), the liquid crystal display device is more effective than the case where the above-described reflective electrode 4 and the like are formed by individual etching processes. The number of manufacturing processes can be reduced.

  To summarize the characteristic configuration of the manufacturing method of the liquid crystal display device according to the present invention, the manufacturing method of the liquid crystal display device shown in FIGS. 42 to 46 includes the following steps. First, as shown in FIG. 2, the process of preparing the glass substrate 1 as a board | substrate is implemented. As shown in FIG. 42, a step of forming a transmission film (ITO film 59) on the glass substrate 1 is performed. The transmissive film (ITO film 59) is a film including portions to be the transmissive electrode 3 and the terminal electrode 5. A step of forming a lower conductor film (nitrogen-containing aluminum-based alloy film 75) on the permeable film (ITO film 59) is performed. The lower conductor film (nitrogen-containing aluminum-based alloy film 75) is a film including a portion to be a base conductor film (base electrode 71 (see FIG. 32)). A step of forming a conductor film (aluminum alloy film 57) on the lower conductor film (nitrogen-containing aluminum alloy film 75) is performed. The conductor film (aluminum-based alloy film 57) is a film including a portion that should become the reflective electrode 4. As shown in FIGS. 43 and 44, the conductive film (aluminum-based alloy film 57) and the lower conductive film (nitrogen-containing aluminum-based alloy film 75) are partially removed by continuous etching, whereby a permeable film The entire surface of the lower side (the part to be the transmissive electrode 3) is in contact with the above part (over a part of the part to be the transmissive electrode 3 (see FIG. 32) in the permeable membrane). A processing step of forming a base conductor film (base electrode 71) to be performed and the reflective electrode 4 positioned on the base electrode 71 is performed. As shown in FIGS. 45 and 46, the transmission film (ITO film 59) is partially removed by etching, so that it extends from the region located under the base electrode 71 to the region where the base electrode 71 is not formed. A transmissive film processing step is performed to form the transmissive electrode 3 existing and the terminal electrode 5 that is configured by the same layer as the transmissive electrode 3 and is located in a region different from the region where the transmissive electrode 3 is formed.

In this way, the liquid crystal display device shown in FIG. 32 can be easily obtained.
Further, the permeable film (ITO film 59), the lower conductor film (nitrogen-containing aluminum-based alloy film 75), and the conductor film (aluminum-based alloy film 57) are continuously formed (without performing an etching step or the like in between). Therefore, in order to form each of the three films described above, a liquid crystal display can be used as compared with the case where the steps of evacuating the film forming apparatus and cleaning the glass substrate 1 are performed for each of the three film forming processes. The number of manufacturing steps of the device can be reduced.

  In the above-described processing steps, the base conductor film (base electrode 71) and the reflective electrode 4 are formed by continuous etching (that is, by one etching), so the base electrode 71 and the reflective electrode 4 are separately formed. The number of manufacturing steps of the liquid crystal display device can be reduced as compared with the case of forming by the etching step. As a result, the manufacturing cost of the liquid crystal display device can be reduced.

  In the manufacturing method of the liquid crystal display device, in the processing step, the base layer 72 composed of the same layer as the base electrode 71 is formed, and the upper layer 73 composed of the same layer as the reflective electrode 4 is formed. Good. That is, in the processing step, the lower conductor film (nitrogen-containing aluminum-based alloy film 75) is partially removed by etching, so that another part of the transmission film (ITO film 59) (with the terminal electrode 5 in the dropped film) is obtained. A base layer 72 may be formed so that the entire surface on the lower side (part side to be the terminal electrode 5) is in contact with the other part. In the processing step, the upper layer 73 located on the underlayer 72 may be formed by partially removing the conductor film (aluminum-based alloy film 57) by etching.

  In this case, the base layer 72 and the upper layer 73 constituting the protective cap 74 can be formed without increasing the number of manufacturing steps. For this reason, an increase in the manufacturing cost of the liquid crystal display device can be suppressed.

  To summarize the characteristic configuration of the manufacturing method of the liquid crystal display device according to the present invention, the manufacturing method of the liquid crystal display device shown in FIGS. First, as shown in FIG. 2, the process of preparing the glass substrate 1 as a board | substrate is implemented. As shown in FIG. 47, a step of forming a transmission film (ITO film 59) on the glass substrate 1 is performed. The transmissive film (ITO film 59) is a film including a portion including portions to be the transmissive electrode 3 and the terminal electrode 5. A step of forming a conductor film (silver alloy film 70) on the transmission film (ITO film 59) is performed. The conductor film (silver-based alloy film 70) is a film including a portion including a portion to be the reflective electrode 4. As shown in FIGS. 48 and 49, the conductor film (silver-based alloy film 70) is partially removed by etching, so that a part of the transmissive film (ITO film 59) (the transmissive electrode 3 in the ITO film 59) is obtained. A processing step is performed in which the reflective electrode 4 is formed so that the entire surface on the lower side (part side to be the transmissive electrode 3) is in contact with part of the ITO film 59. . As shown in FIGS. 50 and 51, by partially removing the transmission film (ITO film 59) by etching, the region extending from the region under the reflective electrode 4 to the region where the reflective electrode 4 is not formed is extended. A permeable membrane processing step is performed to form the transmissive electrode 3 and the terminal electrode 5 that is configured by the same layer as the transmissive electrode 3 and is located in a region different from the region where the transmissive electrode 3 is formed.

In this way, the liquid crystal display device shown in FIG. 38 can be easily obtained.
Further, as shown in FIG. 47, a permeable film (ITO film 59) and a conductor film (silver-based alloy film 70) can be formed continuously (without performing an etching step or the like in between). The number of manufacturing steps of the liquid crystal display device is reduced compared to the case where the steps of evacuating the film forming apparatus and cleaning the glass substrate 1 are performed for each of the two film forming processes in order to form the two films described above. it can.

  In the manufacturing method of the liquid crystal display device, in the processing step, the conductor film (silver-based alloy film 70) is partially removed by etching, whereby another part of the transmission film (ITO film 59) (ITO film) is obtained. 59, the entire surface on the lower side (the part side to be the terminal electrode 5) is in contact with a part of the ITO film 59 and is on the same layer as the reflective electrode 4. A protective cap 74 may be formed.

  In this case, the protective cap 74 can be formed without increasing the number of manufacturing steps. For this reason, an increase in the manufacturing cost of the liquid crystal display device can be suppressed.

  In the method of manufacturing the liquid crystal display device, as shown in FIG. 61, a protective film (molybdenum alloy film 88) is formed on the conductor film (aluminum alloy film 57 or silver alloy film 70 in FIG. 47). You may implement a process. In the processing step, etching may be performed in a state where the protective film (molybdenum-based alloy film 88) is formed.

  In this case, due to the presence of the molybdenum-based alloy film 88 as a protective film, the transmissive film (ITO film 59) located under the protective film (molybdenum-based alloy film 88) in the etching process, an etching solution used for etching, and the like The possibility that an unnecessary reaction occurs between the two can be reduced.

  To summarize the characteristic configuration of the manufacturing method of the liquid crystal display device according to the present invention, the manufacturing method of the liquid crystal display device shown in FIGS. First, as shown in FIG. 2, the process of preparing the glass substrate 1 as a board | substrate is implemented. As shown in FIG. 52, a step of forming a transmission film (ITO film 59) on the glass substrate 1 is performed. The transmissive film (ITO film 59) is a film including portions to be the transmissive electrode 3 and the terminal electrode 5. A step of forming a lower conductor film (molybdenum-based alloy film 64) on the transmission film (ITO film 59) is performed. The lower conductor film (molybdenum-based alloy film 64) is a film including a portion to be a base conductor film (base electrode 71). Then, a step of forming a conductor film (aluminum alloy film 57) on the lower conductor film (molybdenum alloy film 64) is performed. The conductor film (aluminum-based alloy film 57) is a film including a portion that should become the reflective electrode 4. As shown in FIGS. 52 to 55, a first portion (thick portion 86) having a relatively thick film thickness and a relatively thin film thickness are formed on the conductor film (aluminum alloy film 57). A step of forming a resist film 58 including the second portion (thin wall portion 87) is performed. As shown in FIG. 55, using the resist film 58 as a mask, the conductor film (aluminum alloy film 57), the lower conductor film (molybdenum alloy film 64), and the transmission film (ITO film 59) are partially etched. By removing the conductive electrode 3, the transmissive electrode 3 constituted by the transmissive film (ITO film 59) and the terminal electrode which is constituted by the same layer as the transmissive electrode 3 and is located in a region different from the region where the transmissive electrode 3 is formed 5 and the first processing step of forming the conductor film (aluminum alloy film 57) and the lower conductor film (molybdenum alloy film 64) remaining on the transmissive electrode 3 and the terminal electrode 5 are performed. . As shown in FIG. 56, after the first processing step, by removing the surface layer of the resist film 80, the first portion (thick portion 86) remains while the second portion (thin portion 87). A step of removing is performed. As shown in FIGS. 56 and 37, using the first portion (thick portion 86) of the resist film 58 as a mask, the conductor film (aluminum alloy film 57) remaining after the first processing step is used. Further, the lower conductor film (molybdenum-based alloy film 64) is partially removed by continuous etching, so that the base conductor film (base electrode 71) overlapping the transmissive electrode 3 and the base electrode 71 are formed. A second processing step for forming the positioned reflective electrode 4 is performed. The base conductor film (base electrode 71) may be electrically connected to the transmissive electrode 3 by contacting the transmissive electrode 3.

  In this way, the transmissive electrode 3, the terminal electrode 5, the base electrode 71, and the reflective electrode 4 can be formed by using one resist film 58. Therefore, a plurality of resist films are formed to form the transmissive electrode 3 and the like. There is no need to form. For this reason, it is possible to reduce the number of manufacturing steps of the liquid crystal display device than before.

  In the method of manufacturing the liquid crystal display device, as shown in FIGS. 56 and 37, the base layer 72 and the upper layer 73 may be formed in the second processing step. That is, in the processing step, the lower conductor film (molybdenum-based alloy film 64) is partially removed by etching so as to be located on the terminal electrode 5 and formed of the same layer as the base electrode 71. 72 may be formed. The entire lower layer (terminal electrode 5 side) surface of the base layer 72 may be in contact with the terminal electrode 5. In the processing step, a portion of the conductor film (aluminum-based alloy film 57) is partially removed by etching, so that an upper layer 73 located on the base layer 72 and composed of the same layer as the reflective electrode 4 is formed. It may be formed.

  In this case, the base layer 72 and the upper layer 73 constituting the protective cap 74 can be formed without increasing the number of manufacturing steps. For this reason, an increase in the manufacturing cost of the liquid crystal display device can be suppressed.

  To summarize the characteristic configuration of the manufacturing method of the liquid crystal display device according to the present invention, the manufacturing method of the liquid crystal display device shown in FIGS. First, as shown in FIG. 2, a step of preparing a glass substrate 1 as a substrate is performed. As shown in FIG. 47, a step of forming a transmission film (ITO film 59) on the glass substrate 1 is performed. The transmissive film (ITO film 59) is a film including portions to be the transmissive electrode 3 and the terminal electrode 5. A step of forming a conductor film (silver alloy film 70) on the transmission film (ITO film 59) is performed. The conductor film (silver-based alloy film 70) is a film including a portion that should become the reflective electrode 4. As shown in FIGS. 57 to 59, a first portion (thick portion 86) having a relatively thick film thickness and a relatively thin film thickness are formed on the conductor film (silver-based alloy film 70). A step of forming a resist film 58 including the second portion (thin wall portion 87) is performed. As shown in FIG. 59, using the resist film 58 as a mask, the conductive film (silver-based alloy film 70) and the transmissive film (ITO film 59) are partially removed by etching, whereby the transmissive film (ITO film) is obtained. 59), the terminal electrode 5 composed of the same layer as the transmissive electrode 3, and the portion of the transmissive electrode 3 and the conductor film (silver-based alloy film 70) remaining on the terminal electrode 5; A first processing step for forming is performed. As shown in FIG. 60, after the first processing step, the surface layer of the resist film 58 (see FIG. 59) is removed to leave the first portion (thick portion 86) while the second portion. A step of removing (thin wall portion 87) is performed. As shown in FIGS. 60 and 51, using the first portion (thick portion 86) of the resist film 58 as a mask, the conductor film (silver-based alloy film 70) remaining after the first processing step is used. The second processing step of forming the reflective electrode 4 overlapping the transmissive electrode 3 is performed by partially removing this part by etching. The reflective electrode 4 may be electrically connected to the transmissive electrode 3 by contacting the transmissive electrode 3.

  In this way, since the transmissive electrode 3, the terminal electrode 5, and the reflective electrode 4 can be formed using one resist film 58, it is necessary to form a plurality of resist films in order to form the transmissive electrode 3 and the like. No. For this reason, it is possible to reduce the number of manufacturing steps of the liquid crystal display device than before.

  In the liquid crystal display device, in the second processing step, the conductive film (silver-based alloy film 70) is partially removed by etching to be positioned on the terminal electrode 5 and in the same layer as the reflective electrode 4. A protective cap 74 may be formed. The entire surface of the lower side (terminal electrode 5 side) of the protective cap 74 may be in contact with the terminal electrode 5.

  In this case, the protective cap 74 can be formed without increasing the number of manufacturing steps. For this reason, an increase in the manufacturing cost of the liquid crystal display device can be suppressed.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above-described embodiment but by the scope of claims, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

1 is a schematic drawing showing Embodiment 1 of a liquid crystal display device according to the present invention. It is a cross-sectional schematic diagram for demonstrating the 1st process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 2nd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 3rd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 4th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 5th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 6th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 7th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 8th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 9th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 10th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 11th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram which shows the liquid crystal display device as a reference example for demonstrating the effect of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 1st process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 2nd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 3rd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 4th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 5th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 6th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 7th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 8th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 9th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 10th process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram which shows the modification of Embodiment 1 of the liquid crystal display device by this invention. FIG. 25 is a schematic cross-sectional view for explaining a first step in the method for manufacturing the liquid crystal display device shown in FIG. 24. FIG. 25 is a schematic cross-sectional view for explaining a second step of the method for manufacturing the liquid crystal display device shown in FIG. 24. FIG. 25 is a schematic cross-sectional view for explaining a third step of the method for manufacturing the liquid crystal display device shown in FIG. 24. It is a cross-sectional schematic diagram which shows Embodiment 2 of the liquid crystal display device by this invention. FIG. 29 is a schematic cross-sectional view for illustrating a first step in the method for manufacturing the liquid crystal display device shown in FIG. 28. It is a cross-sectional schematic diagram for demonstrating the 2nd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 3rd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram which shows Embodiment 3 of the liquid crystal display device by this invention. FIG. 33 is a schematic cross-sectional view for illustrating a first step of the method for manufacturing the liquid crystal display device shown in FIG. 32. FIG. 33 is a schematic cross-sectional view for illustrating a second step of the method for manufacturing the liquid crystal display device shown in FIG. 32. FIG. 33 is a schematic cross-sectional view for illustrating a third step of the method for manufacturing the liquid crystal display device shown in FIG. 32. FIG. 33 is a schematic cross-sectional view for illustrating a fourth step of the method for manufacturing the liquid crystal display device shown in FIG. 32. FIG. 33 is a schematic cross-sectional view for explaining a fifth step of the method for manufacturing the liquid crystal display device shown in FIG. 32. It is a cross-sectional schematic diagram which shows Embodiment 4 of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 1st process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 2nd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 3rd process of the manufacturing method of the liquid crystal display device shown in FIG. It is a cross-sectional schematic diagram for demonstrating the 1st process of Embodiment 5 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 2nd process of Embodiment 5 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 3rd process of Embodiment 5 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 4th process of Embodiment 5 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 5th process of Embodiment 5 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 1st process of Embodiment 6 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 2nd process of Embodiment 6 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 3rd process of Embodiment 6 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 4th process of Embodiment 6 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 5th process of Embodiment 6 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 1st process of Embodiment 7 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 2nd process of Embodiment 7 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 3rd process of Embodiment 7 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 4th process of Embodiment 7 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 5th process of Embodiment 7 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 1st process of Embodiment 8 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 2nd process of Embodiment 8 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 3rd process of Embodiment 8 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 4th process of Embodiment 8 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 1st process of Embodiment 9 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 2nd process of Embodiment 9 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 3rd process of Embodiment 9 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 4th process of Embodiment 9 of the manufacturing method of the liquid crystal display device by this invention. It is a cross-sectional schematic diagram for demonstrating the 5th process of Embodiment 9 of the manufacturing method of the liquid crystal display device by this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Glass substrate, 2 Thin film field effect transistor, 3 Transmission electrode, 4 Reflection electrode, 5 Terminal electrode, 6 Underlayer, 7a, 7b Source / drain area, 8 channel area, 9 Lower electrode, 10, 17 Insulating film, 11 Storage Capacity, 12 gate electrode, 13 common electrode, 14 protective film, 15a-15c, 19a-19d contact hole, 16a-16c electrode, 18 organic insulating film, 20, 20a, 20b ground electrode, 21 wiring, 22 opening, 23 Color filter, 24 Counter electrode, 25 Counter glass substrate, 26 Sealant, 27 Liquid crystal, 28a, 28b Alignment film, 29a, 29b Polysilicon film, 35, 36 Side surface, 37-39, 44a, 44b, 46, 47 End 41 Base wiring, 42 Upper wiring, 43 Connection wiring, 45 Cover film, 51 Silicon nitriding , 52 Silicon oxide film, 53, 55 Molybdenum film, 54, 57 Aluminum alloy film, 56 Chromium film, 58, 80 Resist film, 59 ITO film, 63a Molybdenum base electrode, 64 Molybdenum alloy film, 69, 72 Base layer, 70 Silver alloy film, 71 Base electrode, 73 Upper layer, 74 Protective cap, 75 Nitrogen-containing aluminum alloy film, 76 Mask, 77 Membrane, 78, 84 Light shield, 79 Arrow, 81, 85 Exposed part, 82 Not yet Exposed portion, 83 mask, 86 thick portion, 87 thin portion, 88 molybdenum-based alloy film.

Claims (22)

A substrate,
A transmissive electrode formed on the substrate;
An underlying conductor film overlying a part of the transmissive electrode on the substrate;
A reflective electrode formed on the underlying conductor film and having a planar shape substantially the same as the planar shape of the underlying conductor film;
A terminal electrode formed on the substrate and composed of the same layer as the transmissive electrode;
On the substrate, overlying a part of the terminal electrode, and a base wiring composed of the same layer as the base conductor film,
A liquid crystal display device comprising an upper layer wiring formed on the base wiring and formed of the same layer as the reflective electrode. A substrate,
A transmissive electrode formed on the substrate;
An underlying conductor film overlying a part of the transmissive electrode and in which the entire lower surface is in contact with the transmissive electrode;
A reflective electrode formed on the underlying conductor film and having a planar shape substantially the same as the planar shape of the underlying conductor film;
A liquid crystal display device comprising: a terminal electrode formed on the substrate and configured by the same layer as the transmissive electrode. On the substrate, a base film located under the terminal electrode;
Wiring located under the base film,
An opening for exposing at least a part of the surface of the wiring is formed in the base film,
The terminal electrode extends to the inside of the opening of the base film, and is formed to be electrically connected to the wiring inside the opening,
On the terminal electrode, a base layer formed in a region located on the opening and composed of the same layer as the base conductor film;
The liquid crystal display device according to claim 2, further comprising: an upper layer formed on the base layer and configured by the same layer as the reflective electrode. The reflective electrode includes at least one of a metal mainly composed of aluminum and a metal mainly composed of silver,
The underlying conductor film includes at least one of a metal mainly composed of a refractory metal and a metal mainly composed of aluminum containing nitrogen,
The liquid crystal display device according to claim 1, wherein the transmissive electrode includes tin-added indium oxide.   5. The material according to claim 1, wherein the material constituting the reflective electrode and the material constituting the base conductor film are determined so that etching can be performed using the same etching solution. The liquid crystal display device described. A substrate,
A transmissive electrode formed on the substrate and including tin-doped indium oxide;
A liquid crystal including a portion located in a region that does not overlap with the transmissive electrode on the substrate and a reflective electrode that is formed to overlap with a part of the transmissive electrode and includes a metal whose main component is silver Display device. A terminal electrode formed on the substrate and composed of the same layer as the transmissive electrode;
The liquid crystal display device according to claim 6, further comprising a connection wiring which is formed on the substrate and overlaps with a part of the terminal electrode and is configured by the same layer as the reflective electrode. A substrate,
A transmissive electrode formed on the substrate and including tin-doped indium oxide;
A reflective electrode containing a metal whose main component is silver, overlaid on a part of the transmissive electrode, and formed so that the entire lower surface is in contact with the transmissive electrode;
A liquid crystal display device comprising: a terminal electrode formed on the substrate and configured by the same layer as the transmissive electrode. On the substrate, a base film located under the terminal electrode;
Wiring located under the base film,
An opening for exposing at least a part of the surface of the wiring is formed in the base film,
The terminal electrode extends to the inside of the opening of the base film and is formed to be electrically connected to the surface of the wiring inside the opening,
The liquid crystal display device according to claim 8, further comprising a protective cap that is formed in a region located on the opening on the terminal electrode and includes the same layer as the reflective electrode. Forming a permeable membrane on the substrate;
By partially removing the permeable film by etching, a permeable film processing step of forming a transmissive electrode and a terminal electrode composed of the same layer as the transmissive electrode;
Forming a lower conductor film on the substrate on which the transmissive electrode and the terminal electrode are formed;
Forming a conductor film on the lower conductor film;
The conductor film and the lower conductor film are partially removed by continuous etching, so that a base conductor film overlying a part of the transmissive electrode and a reflection located on the base conductor film A method of manufacturing a liquid crystal display device, comprising: an electrode; a base wiring that overlaps a part of the terminal electrode; and a processing step that forms an upper wiring positioned on the base wiring. Forming a permeable membrane on the substrate;
By partially removing the permeable film by etching, a permeable film processing step of forming a transmissive electrode and a terminal electrode composed of the same layer as the transmissive electrode;
Forming a conductor film on the substrate on which the transmissive electrode and the terminal electrode are formed;
A liquid crystal comprising a processing step of forming a reflective electrode overlapping on a part of the transmissive electrode and a connection wiring overlapping on a part of the terminal electrode by partially removing the conductor film by etching. Manufacturing method of display device. Forming a permeable membrane on the substrate;
By partially removing the permeable film by etching, a permeable film and a permeable film processing step of forming a terminal electrode composed of the same layer as the transmissive electrode,
Forming a lower conductor film on the substrate on which the transmissive electrode and the terminal electrode are formed;
Forming a conductor film on the lower conductor film;
By removing the conductive film and the lower conductive film partly by continuous etching, an underlying conductor in which the entire lower surface is in contact with the transmissive electrode overlying a part of the transmissive electrode. A liquid crystal display device comprising: a film, a reflective electrode positioned on the base conductor film, a base layer overlying a part of the terminal electrode, and a processing step of forming an upper layer positioned on the base layer Manufacturing method. Forming a permeable membrane on the substrate;
By partially removing the permeable film by etching, a permeable film processing step of forming a transmissive electrode and a terminal electrode composed of the same layer as the transmissive electrode;
Forming a conductor film on the substrate on which the transmissive electrode and the terminal electrode are formed;
By partially removing the conductive film by etching, the conductive film overlaps with a part of the transmissive electrode, and the entire lower surface is in contact with the transmissive electrode, and over the part of the terminal electrode. The manufacturing method of a liquid crystal display device provided with the process process which forms the protective cap which overlaps. Forming a permeable membrane on the substrate;
Forming a lower conductor film on the permeable film;
Forming a conductor film on the lower conductor film;
By removing the conductor film and the lower conductor film continuously by partial etching, a base conductor that is overlaid on a part of the permeable film and whose entire lower surface is in contact with the part A processing step of forming a film and a reflective electrode located on the underlying conductor film;
By partially removing the transmissive film by etching, a transmissive electrode extending from a region located under the base conductor film to a region where the base conductor film is not formed, and the same as the transmissive electrode A method for manufacturing a liquid crystal display device, comprising: a transmissive film processing step of forming a terminal electrode that is configured by a layer and is located in a region different from a region where the transmissive electrode is formed. In the processing step,
By partially removing the lower conductor film by etching, it overlaps with another part of the transmission film, and the entire lower surface is in contact with the other part, and the base conductor film and An underlayer composed of the same layer is formed,
The liquid crystal display device according to claim 14, wherein the conductive film is partially removed by etching to form an upper layer that is located on the base layer and includes the same layer as the reflective electrode. Method. Forming a permeable membrane on the substrate;
Forming a conductor film on the permeable film;
A processing step of forming a reflective electrode in which the entire lower surface is in contact with the part by overlapping the part of the transmission film by partially removing the conductor film by etching;
By partially removing the transmissive film by etching, the transmissive electrode extends from a region located under the reflective electrode to a region where the reflective electrode is not formed, and the same layer as the transmissive electrode. And a transmissive film processing step of forming a terminal electrode located in a region different from the region where the transmissive electrode is formed.   In the processing step, the conductive film is partially removed by etching, so that a protective cap composed of the same layer as the reflective electrode is formed on another part of the transmissive film. A method for manufacturing a liquid crystal display device according to claim 16. Comprising a step of forming a protective film on the conductor film,
The method for manufacturing a liquid crystal display device according to claim 10, wherein, in the processing step, etching is performed in a state where the protective film is formed. Forming a permeable membrane on the substrate;
Forming a lower conductor film on the permeable film;
Forming a conductor film on the lower conductor film;
Forming a resist film including a relatively thick first portion and a relatively thin second portion on the conductor film;
Using the resist film as a mask, the conductive film, the lower conductive film, and the transmissive film are partially removed by etching, so that the transmissive electrode constituted by the transmissive film is the same as the transmissive electrode A terminal electrode that is configured by a layer and is located in a region different from the region where the transmissive electrode is formed, and the conductive film remaining on the transmissive electrode and the terminal electrode and the portion of the lower conductive film are formed. A first processing step to
Removing the second portion while leaving the first portion by removing the surface layer of the resist film after the first processing step;
Using the first portion of the resist film as a mask, the portions of the conductor film and the lower conductor film remaining after the first processing step are partially removed by continuous etching. And a second processing step of forming a base conductor film overlying the transmissive electrode and a reflective electrode positioned on the base conductor film. In the second processing step,
By partially removing the portion of the lower conductor film by etching, a base layer that is located on the terminal electrode and is composed of the same layer as the base conductor film is formed,
The liquid crystal display according to claim 19, wherein an upper layer that is located on the base layer and includes the same layer as the reflective electrode is formed by partially removing the portion of the conductor film by etching. Device manufacturing method. Forming a permeable membrane on the substrate;
Forming a conductor film on the permeable film;
Forming a resist film including a relatively thick first portion and a relatively thin second portion on the conductor film;
By using the resist film as a mask and partially removing the conductive film and the transmissive film by etching, a transmissive electrode constituted by the transmissive film and a terminal constituted by the same layer as the transmissive electrode A first processing step of forming an electrode and a portion of the conductor film remaining on the transmissive electrode and the terminal electrode;
After the first processing step, by removing the surface layer of the resist film, the step of removing the second portion while leaving the first portion,
Using the first portion of the resist film as a mask, the portion of the conductor film remaining after the first processing step is partially removed by etching so as to overlap the transmissive electrode. And a second processing step of forming a reflective electrode. In the second processing step,
The liquid crystal according to claim 21, wherein a part of the conductive film is removed by etching to form a protective cap that is located on the terminal electrode and includes the same layer as the reflective electrode. Manufacturing method of display device.

Images