JP2005085685A - マグネトロン - Google Patents
マグネトロン Download PDFInfo
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- JP2005085685A JP2005085685A JP2003318421A JP2003318421A JP2005085685A JP 2005085685 A JP2005085685 A JP 2005085685A JP 2003318421 A JP2003318421 A JP 2003318421A JP 2003318421 A JP2003318421 A JP 2003318421A JP 2005085685 A JP2005085685 A JP 2005085685A
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- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000009434 installation Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 description 44
- 230000001965 increasing effect Effects 0.000 description 15
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
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Abstract
【解決手段】 ベイン型共振器で構成されているマグネトロン11において、放出するマイクロ波の基本周波数は5,800MHz±75MHzに設定すると共に、陽極筒体13の内周面に放射状に配列された複数枚の板状ベイン17の装備数を14〜22個の範囲に設定する。
【選択図】 図1
Description
西巻正郎著、「マイクロ波真空管とその回路」オーム社、昭和40年6月、p。184〜193。
13 陽極筒体
15 陰極
17 板状ベイン
19 均圧環
21 アンテナ
Dc 陰極外径
Da 板状ベインの遊端間最大径
Claims (3)
- 円筒状の陽極筒体と、この陽極筒体の中心軸上に配置される陰極と、前記陽極筒体の内周面に固着されると共に前記中心軸の周りに放射状に配列された複数枚の板状ベインと、これらの板状ベインを一枚おきに電気的に接続するための複数個の均圧環と、前記板状ベインの一枚に固着されたマイクロ波放出用アンテナとを有し、前記マイクロ波放出用アンテナから放出するマイクロ波の基本周波数を5,800MHz±75MHzに設定すると共に、前記板状ベインの装備数を14〜22個の範囲に設定したことを特徴とするマグネトロン。
- 陰極外径Dcと板状ベインの遊端間最大径Daとの比を、0.56≦Dc/Da≦0.69に設定したことを特徴とする請求項1に記載のマグネトロン。
- 陽極と陰極との間に与える電位差vを、4.0kV≦v≦5.0kVに設定したことを特徴とする請求項2に記載のマグネトロン。
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JP2003318421A JP4233421B2 (ja) | 2003-09-10 | 2003-09-10 | マグネトロン |
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JP2003318421A JP4233421B2 (ja) | 2003-09-10 | 2003-09-10 | マグネトロン |
Publications (2)
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JP2005085685A true JP2005085685A (ja) | 2005-03-31 |
JP4233421B2 JP4233421B2 (ja) | 2009-03-04 |
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JP2003318421A Expired - Lifetime JP4233421B2 (ja) | 2003-09-10 | 2003-09-10 | マグネトロン |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014010226A1 (ja) * | 2012-07-09 | 2014-01-16 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
JP2015015188A (ja) * | 2013-07-05 | 2015-01-22 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
JP2015015190A (ja) * | 2013-07-05 | 2015-01-22 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
JP2015015189A (ja) * | 2013-07-05 | 2015-01-22 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
-
2003
- 2003-09-10 JP JP2003318421A patent/JP4233421B2/ja not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014010226A1 (ja) * | 2012-07-09 | 2014-01-16 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
JP2014032958A (ja) * | 2012-07-09 | 2014-02-20 | Toshiba Hokuto Electronics Corp | プラズマ発光装置とそれに用いる電磁波発生器 |
CN104520969A (zh) * | 2012-07-09 | 2015-04-15 | 东芝北斗电子株式会社 | 等离子体发光装置及其所使用的电磁波产生器 |
EP2871667A1 (en) * | 2012-07-09 | 2015-05-13 | Toshiba Hokuto Electronics Corp. | Plasma emission device, and electromagnetic wave generator employed in same |
EP2871667A4 (en) * | 2012-07-09 | 2016-04-27 | Toshiba Hokuto Elect Corp | PLASMA EMISSIONING DEVICE AND ELECTROMAGNETIC WAVE GENERATOR THEREFOR |
US9648718B2 (en) | 2012-07-09 | 2017-05-09 | Toshiba Hokuto Electronics Corporation | Plasma emission device, and electromagnetic wave generator used therein |
JP2015015188A (ja) * | 2013-07-05 | 2015-01-22 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
JP2015015190A (ja) * | 2013-07-05 | 2015-01-22 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
JP2015015189A (ja) * | 2013-07-05 | 2015-01-22 | 東芝ホクト電子株式会社 | プラズマ発光装置とそれに用いる電磁波発生器 |
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